Basic Information

Professional Memberships

• From Oct. 2021, To Present

  応用物理学会 結晶工学分科会
• From Apr. 2017

  応用物理学会

Academic Degree

• 修士（工学）(京都大学)
• 博士（工学）(京都大学)

Research History

• From Apr. 2020, To Oct. 2020

  旭化成株式会社, PEDプロジェクト, 研究員

Language of Instruction

• Japanese
• English

ID,URL

• ORCID ID

  0000-0002-6745-685X

• J-Global ID

  202001001584439079

• External link

  http://www.optomater.kuee.kyoto-u.ac.jp/

researchmap URL

• https://researchmap.jp/YoshinobuMatsuda

Research

Research Interests

• InGaN
• Metalorganic vapor phase epitaxy
• Light-Emitting Diode
• Nitride semiconductor

Research Areas

• Nanotechnology/Materials, Thin-film surfaces and interfaces
• Nanotechnology/Materials, Optical engineering and photonics
• Nanotechnology/Materials, Crystal engineering
• Natural sciences, Semiconductors, optical and atomic physics
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Papers

• Metal-Organic Vapor Phase Epitaxy of High-Quality GaN on Al-Pretreated Sapphire Substrates Without Using Low-Temperature Buffer Layers

  K Takemura; T Fukui; Y Matsuda; M Funato; Y Kawakami

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, May 2024, Peer-reviewed

  
• 自在制御された三次元構造に基づくInGaN系多色発光LED

  松田 祥伸; 船戸 充; 川上 養一

  日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth, 2024, Peer-reviewed

  
• An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens-Shaped GaN Microstructures via Lower-Temperature Growth

  S Fukushige; Y Matsuda; M Funato; Y Kawakami

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jun. 2024, Peer-reviewed

  
• Spontaneously Integrated Multicolor InGaN Micro-Light-Emitting Diodes for Spectrum-Controllable Broadband Light Sources

  Y Matsuda; H Miyawaki; M Funato; Y Kawakami

  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, May 2024, Peer-reviewed

  
• A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

  Mitsuru Funato; Yoshinobu Matsuda; Yoichi Kawakami

  Semiconductor Science and Technology, 01 Jan. 2024

  
• Anisotropic emission wavelength distribution of semipolar InGaN quantum wells on symmetric convex lens-shaped GaN microstructures

  Yoshinobu Matsuda; Atsushi Sakaki; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Letters, 11 Dec. 2023

  
• Flexible topographical design of light-emitting diodes realizing electrically controllable multi-wavelength spectra

  Yoshinobu Matsuda; Ryunosuke Umemoto; Mitsuru Funato; Yoichi Kawakami

  Scientific Reports, 04 Aug. 2023

  
• Interface formation mechanism of GaN on Al-pretreated ScAlMgO₄ (0001) substrates

  Takato Fukui; Yoshinobu Matsuda; Makoto Matsukura; Takahiro Kojima; Mitsuru Funato; Yoichi Kawakami

  Crystal Growth & Design, 05 Apr. 2023

  
• ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: demonstration of far-red LEDs

  Mitsuru Funato; Keita Maehara; Yoshinobu Matsuda; Takuya Ozaki; Yoichi Kawakami

  Gallium Nitride Materials and Devices XVIII, 15 Mar. 2023

  
• InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Jan. 2023

  
• Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures

  Yoshinobu Matsuda; Souta Funato; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Oct. 2022

  
• Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates

  Takato Fukui; Taro Sakaguchi; Yoshinobu Matsuda; Makoto Matsukura; Takahiro Kojima; Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, 01 Sep. 2022

  
• Optical anisotropy of (11 2¯3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates

  Mitsuru Funato; Yoshinobu Matsuda; Keito Mori-Tamamura; Atsushi A. Yamaguchi; Hiroki Goto; Yasunobu Sumida; Yujiro Ishihara; Yoichi Kawakami

  Journal of Applied Physics, 21 Feb. 2022

  
• Growth evolution of polar-plane-free faceted GaN structures on (112¯2) and (1¯1¯22¯) GaN substrates

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  Journal of Applied Physics, 28 Apr. 2021, Lead author

  
• Influence of substrate misorientation on emission and waveguiding properties of blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction

  Anna Kafar; Atsushi Sakaki; Ryota Ishii; Szymon Stanczyk; Krzysztof Gibasiewicz; Yoshinobu Matsuda; Dario Schiavon; Szymon Grzanka; Tadek Suski; Piotr Perlin; Mitsuru Funato; Yoichi Kawakami

  Photonics Research, 05 Jan. 2021

  
• Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (-1-12-2) semipolar planes

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  Journal of Applied Physics, 07 Dec. 2020

  
• Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

  A. Kafar; R. Ishii; K. Gibasiewicz; Y. Matsuda; S. Stanczyk; D. Schiavon; S. Grzanka; M. Tano; A. Sakaki; T. Suski; P. Perlin; M. Funato; Y. Kawakami

  Optics Express, 20 Jul. 2020

  
• Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

  Yoshinobu MATSUDA; Mitsuru FUNATO; Yoichi KAWAKAMI

  IEICE Transactions on Electronics, 01 Jul. 2018

  
• Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Jul. 2017

  

Misc.

• Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells

  松田 祥伸; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016