Basic Information

Faculty

• Faculty of Engineering
• Faculty of Engineering

Professional Memberships

• 応用物理学会

Academic Degree

• 工学修士(京都大学)
• 博士（工学）(京都大学)

Academic Resume (Graduate Schools)

• 京都大学, 大学院工学研究科修士課程電気工学専攻, 修了

Academic Resume (Undergraduate School/Majors)

• 京都大学, 工学部電気工学科, 卒業

Research History

• From Jan. 2025, To Present

  Kyoto University, Graduate School of Engineering Department of Electronic Science and Engineering, 特定教授
• From Sep. 2007, To Dec. 2024

  Kyoto University, Graduate School of Engineering Department of Electronic Science and Engineering, 准教授

Language of Instruction

• English

ID,URL

• J-Global ID

  200901024972529707

researchmap URL

• https://researchmap.jp/read0012716

Research

Research Topics, Overview of the research

• Research Topics

  Growth and characterizatin of optoelectronic materials

• Overview of the research

  Crystal growth, characterization, and device applications of nitride semiconductors

Research Areas

• Nanotechnology/Materials, Crystal engineering
• Nanotechnology/Materials, Applied materials

Papers

• Electrical characterization of MOVPE-grown p-type GaN:Mg against annealing temperature

  Shizuo Fujita; Mitsuru Funato; Doo-Cheol Park; Yoshifumi Ikenaga; Shigeo Fujita

  Materials Research Society Symposium - Proceedings, 1999

  
• Correlated photoluminescence blinking phenomenon on InGaN/GaN nanopillar structures

  K. Oikawa; K. Okamoto; M. Funato; Y. Kawakami; R. Micheletto

  Applied Physics Letters, 09 Dec. 2024

  
• Nanoscopic structural and optical investigations on blue InGaN single quantum wells serving as layers beneath efficient red active layers

  Zhaozong Zhang; Ryota Ishii; Kanako Shojiki; Mitsuru Funato; Kazuhiro Ohkawa; Daisuke Iida; Yoichi Kawakami

  Journal of Applied Physics, 03 Feb. 2025

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• ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: demonstration of far-red LEDs

  Mitsuru Funato; Keita Maehara; Yoshinobu Matsuda; Takuya Ozaki; Yoichi Kawakami

  Gallium Nitride Materials and Devices XVIII, 15 Mar. 2023

  
• 弱励起した高Al組成AlGaN/AlN量子井戸の局在励起子発光特性

  大音 隆男; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 29 Feb. 2012

  
• 「講演奨励賞受賞記念講演」電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光

  大音 隆男; 片岡 研; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 09 Mar. 2011

  
• 電子線励起法による高Al組成AlGaN/AlN量子井戸からの100 mW深紫外発光

  大音 隆男; 片岡 研; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 30 Aug. 2010

  
• Al_0.79Ga_0.21N/AlN量子井戸のフォトルミネッセンスの時間発展とMott転移付近の発光メカニズムの解析

  大音 隆男; 岩田 佳也; 金田 昭男; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 03 Mar. 2010

  
• High-efficiency green light emission from InGaN/GaN using localized surface plasmon resonance tuned by combination of Ag nanoparticles and dielectric thin film

  Y Kame; S Kaito; T Matsuyama; K Wada; M Funato; Y Kawakami; K Okamoto

  OPTICS EXPRESS, Jun. 2024, Peer-reviewed

  
• An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens-Shaped GaN Microstructures via Lower-Temperature Growth

  S Fukushige; Y Matsuda; M Funato; Y Kawakami

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jun. 2024, Peer-reviewed

  
• Metal-Organic Vapor Phase Epitaxy of High-Quality GaN on Al-Pretreated Sapphire Substrates Without Using Low-Temperature Buffer Layers

  K Takemura; T Fukui; Y Matsuda; M Funato; Y Kawakami

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, May 2024, Peer-reviewed

  
• Spontaneously Integrated Multicolor InGaN Micro-Light-Emitting Diodes for Spectrum-Controllable Broadband Light Sources

  Y Matsuda; H Miyawaki; M Funato; Y Kawakami

  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, May 2024, Peer-reviewed

  
• Confinement of Excitons within GaN 1D Nanoarchitectures Formed on AlN Molecular Steps

  M Funato; H Kobayashi; Y Kawakami

  ADVANCED OPTICAL MATERIALS, Apr. 2024, Peer-reviewed

  
• A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters

  Mitsuru Funato; Yoshinobu Matsuda; Yoichi Kawakami

  Semiconductor Science and Technology, 01 Jan. 2024, Peer-reviewed

  
• 自在制御された三次元構造に基づくInGaN系多色発光LED

  松田 祥伸; 船戸 充; 川上 養一

  日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth, 2024, Peer-reviewed

  
• Anisotropic emission wavelength distribution of semipolar InGaN quantum wells on symmetric convex lens-shaped GaN microstructures

  Yoshinobu Matsuda; Atsushi Sakaki; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Letters, 11 Dec. 2023, Peer-reviewed

  
• Flexible topographical design of light-emitting diodes realizing electrically controllable multi-wavelength spectra

  Y Matsuda; R Umemoto; M Funato; Y Kawakami

  SCIENTIFIC REPORTS, Aug. 2023, Peer-reviewed

  
• Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE

  Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Materials Research Society Symposium - Proceedings, 1997

  
• Semipolar faceting for ingan-based polychromatic LEDs

  Mitsuru Funato; Yoichi Kawakami

  CLEO: Applications and Technology, CLEO_AT 2013, 2013

  
• Raman spectra of cubic Zn1-xCdxS

  M. Ichimura; A. Usami; T. Wada; M. Funato; K. Ichino; Sz Fujita; Sg Fujita

  Physical Review B, 1992

  
• Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes

  Zhaozong Zhang; Ryota Ishii; Kanako Shojiki; Mitsuru Funato; Daisuke Iida; Kazuhiro Ohkawa; Yoichi Kawakami

  physica status solidi (b), 25 Apr. 2024

  
• Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K

  Ryota Ishii; Shiki Tanaka; Norman Susilo; Tim Wernicke; Michael Kneissl; Mitsuru Funato; Yoichi Kawakami

  physica status solidi (b), 22 Mar. 2024

  
• Deep‐Ultraviolet Luminescence Properties of AlN

  Ryota Ishii; Akira Yoshikawa; Mitsuru Funato; Yoichi Kawakami

  physica status solidi (RRL) – Rapid Research Letters, 17 Mar. 2024

  
• GaN分子層量子井戸からの深紫外発光

  船戸 充; 川上 養一

  Optronics : 光技術コーディネートジャーナル, May 2023

  
• Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates

  Takato Fukui; Yoshinobu Matsuda; Makoto Matsukura; Takahiro Kojima; Mitsuru Funato; Yoichi Kawakami

  Crystal Growth & Design, 05 Apr. 2023

  
• Enhancement of the bandgap emission from GaN epilayer by surface plasmon resonance in the quadrupole oscillation mode using Ag nanoparticles protected by an oxide thin film

  Seiya Kaito; Tetsuya Matsuyama; Kenji Wada; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto

  Applied Physics Letters, 10 Apr. 2023, Peer-reviewed

  
• プラズモニクスに基づくⅢ-Ⅴ族窒化物半導体の高効率緑色発光

  岡本 晃一; 垣内 晴也; 亀井 勇希; 松山 哲也; 和田 健司; 船戸 充; 川上 養一

  レーザー研究 = The review of laser engineering : レーザー学会誌 / レーザー学会 編, Feb. 2023, Peer-reviewed

  
• Improved internal quantum efficiencies of far-UVC AlGaN/AlN quantum wells by the use of semipolar r-planes

  R. Akaike; M. Funato; Y. Kawakami

  Applied Physics Letters, 27 Mar. 2023

  
• Temperature Dependent Exciton Dynamics in Al-rich AlGaN/AlN Quantum Wells Assessed by Cathodoluminescence Mapping Measurements

  Oto Takao; Iwata Yoshiya; Gachet David; Benameur Malik; Banal Ryan; Funato Mitsuru; Kawakami Yoichi

  JSAP Annual Meetings Extended Abstracts, 03 Mar. 2014

  
• Co-existence of a few and sub μm inhomogeneity in Al-rich AlGaN/AlN quantum wells

  Iwata Yoshiya; Oto Takao; Gachet David; Benameur Malik; Banal Ryan; Funato Mitsuru; Kawakami Yoichi

  JSAP Annual Meetings Extended Abstracts, 03 Mar. 2014

  
• 高Al組成AlGaN/AlN量子井戸における光学利得特性の井戸幅依存性

  大音 隆男; ライアン バナル; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 31 Aug. 2013

  
• 高Al組成AlGaN/AlN量子井戸における励起子局在の起源

  大音 隆男; ライアン バナル; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 11 Mar. 2013

  
• 高Al組成AlGaN/AlN量子井戸における発光メカニズムの励起密度依存性

  大音 隆男; 船戸 充; 川上 養一

  応用物理学会学術講演会講演予稿集, 27 Aug. 2012

  
• Revisiting the substitutional Mg acceptor binding energy of AlN

  Ryota Ishii; Akira Yoshikawa; Mitsuru Funato; Yoichi Kawakami

  Physical Review B, 14 Jul. 2023

  
• InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Jan. 2023

  
• Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures

  Yoshinobu Matsuda; Souta Funato; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Oct. 2022

  
• Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates

  Takato Fukui; Taro Sakaguchi; Yoshinobu Matsuda; Makoto Matsukura; Takahiro Kojima; Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, 01 Sep. 2022

  
• Approaches to highly efficient UV emitters based on AlGaN quantum wells

  Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Proceedings of SPIE - The International Society for Optical Engineering, 2016, Peer-reviewed, Invited

  
• Optical Anisotropy and Photopumped Lasing near 250 nm from Semipolar (11¯02) Al x Ga 1−x N / AlN Quantum Wells with Cleaved Mirrors

  Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Physical Review Applied, 03 Oct. 2022, Peer-reviewed

  
• Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions

  Shiki Tanaka; Ryota Ishii; Norman Susilo; Tim Wernicke; Michael Kneissl; Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, 01 Nov. 2022

  
• Stimulated emission mechanism of aluminum nitride

  Ryota Ishii; Toru Nagashima; Reo Yamamoto; Tatsuya Hitomi; Mitsuru Funato; Yoichi Kawakami

  Physical Review B, 27 May 2022, Peer-reviewed

  
• Singularity structures for sub-250 nm emissions from AlGaN-based semiconductors

  Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, 01 Dec. 2021

  
• Enhancement of emission from InGaN QW by surface plasmon resonance with Alminium

  Xi Xu; Funato Mitsuru; Kawakami Youichi; Okamoto Kouichi; Tamada Kaoru

  Abstract of annual meeting of the Surface Science of Japan, 2012

  
• Optical anisotropy of (11 2¯3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates

  Mitsuru Funato; Yoshinobu Matsuda; Keito Mori-Tamamura; Atsushi A. Yamaguchi; Hiroki Goto; Yasunobu Sumida; Yujiro Ishihara; Yoichi Kawakami

  Journal of Applied Physics, 21 Feb. 2022

  
• Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

  A. Kafar; A. Sakaki; R. Ishii; K. Shojiki; S. Stanczyk; K. Gibasiewicz; G. Staszczak; L. Marona; D. Schiavon; S. Grzanka; S. Krukowski; T. Suski; P. Perlin; M. Funato; Y. Kawakami

  Optical Materials Express, 01 Jan. 2022

  
• <大学の研究・動向> 新しい光材料と機能の探索 : IT時代へのseedsをめざして

  藤田 茂夫; 藤田 静雄; 川上 養一; 船戸 充

  Cue : 京都大学電気関係教室技術情報誌, Dec. 2000

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• Samarium-doped red phosphor for InGaN-based optical device pumping

  H Saito; T Morioka; O Kawasaki; T Yuasa; M Taneya; S Tanabe; Y Kawakami; M Funato; S Fujita; M Harada

  Shapu Giho/Sharp Technical Journal, 2005, Peer-reviewed

  
• Critical layer thickness of wurtzite heterostructures with arbitrary pairs of growth planes and slip systems

  Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Aug. 2021, Peer-reviewed

  
• Impact of the positive electron–hole exchange interaction constant on the binding energy of neutral donor bound excitons in AlN

  Ryota Ishii; Akira Yoshikawa; Hirotsugu Kobayashi; Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, 01 Aug. 2021

  
• Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy

  Ryota Ishii; Yuji Koyama; Mitsuru Funato; Yoichi Kawakami

  Optics Express, 19 Jul. 2021

  
• Growth evolution of polar-plane-free faceted GaN structures on (1122) and (1122) GaN substrates

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, Apr. 2021, Peer-reviewed

  
• Enhanced nonradiative recombination in AlxGa1−xN-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

  Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, Mar. 2021

  
• Bias-dependent time-resolved photoluminescence spectroscopy on 265 nm AlGaN-based LEDs on AlN substrates

  Ryota Ishii; Akira Yoshikawa; Kazuhiro Nagase; Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, 01 Feb. 2021

  
• Influence of substrate misorientation on emission and waveguiding properties of blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction

  Anna Kafar; Atsushi Sakaki; Ryota Ishii; Szymon Stanczyk; Krzysztof Gibasiewicz; Yoshinobu Matsuda; Dario Schiavon; Szymon Grzanka; Tadek Suski; Piotr Perlin; Mitsuru Funato; Yoichi Kawakami

  Photonics Research, 05 Jan. 2021

  
• The 2020 UV emitter roadmap

  Hiroshi Amano; Ramón Collazo; Carlo De Santi; Sven Einfeldt; Mitsuru Funato; Johannes Glaab; Sylvia Hagedorn; Akira Hirano; Hideki Hirayama; Ryota Ishii; Yukio Kashima; Yoichi Kawakami; Ronny Kirste; Michael Kneissl; Robert Martin; Frank Mehnke; Matteo Meneghini; Abdallah Ougazzaden; Peter J Parbrook; Siddharth Rajan; Pramod Reddy; Friedhard Römer; Jan Ruschel; Biplab Sarkar; Ferdinand Scholz; Leo J Schowalter; Philip Shields; Zlatko Sitar; Luca Sulmoni; Tao Wang; Tim Wernicke; Markus Weyers; Bernd Witzigmann; Yuh-Renn Wu; Thomas Wunderer; Yuewei Zhang

  Journal of Physics D: Applied Physics, 09 Dec. 2020

  
• Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (1¯1¯22¯) semipolar planes

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  Journal of Applied Physics, 07 Dec. 2020, Peer-reviewed

  
• Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates

  Ryota Ishii; Akira Yoshikawa; Kazuhiro Nagase; Mitsuru Funato; Yoichi Kawakami

  AIP Advances, 01 Dec. 2020

  
• Long-range electron-hole exchange interaction in aluminum nitride

  Ryota Ishii; Mitsuru Funato; Yoichi Kawakami

  Physical Review B, 12 Oct. 2020

  
• 265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

  Ryota Ishii; Akira Yoshikawa; Kazuhiro Nagase; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Oct. 2020

  
• Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy

  Katsuhiro Kishimoto; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Letters, 10 Aug. 2020, Peer-reviewed

  
• Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

  A. Kafar; R. Ishii; K. Gibasiewicz; Y. Matsuda; S. Stanczyk; D. Schiavon; S. Grzanka; M. Tano; A. Sakaki; T. Suski; P. Perlin; M. Funato; Y. Kawakami

  Optics Express, 20 Jul. 2020

  
• Lattice relaxation in semipolar Al x Ga1−x N grown on (11̅02) AlN substrates

  Ryota Akaike; Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Jun. 2020, Peer-reviewed

  
• Broadband Ultraviolet Emission from 2D Arrays of AlGaN Microstructures Grown on the Patterned AlN Templates

  Ken Kataoka; Mitsuru Funato; Yoichi Kawakami

  physica status solidi (a), Apr. 2020, Peer-reviewed

  
• Control of p-type conductivity at AlN surfaces by carbon doping

  Katsuhiro Kishimoto; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Jan. 2020, Peer-reviewed

  
• Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells

  Kanako Shojiki; Ryota Ishii; Kenjiro Uesugi; Mitsuru Funato; Yoichi Kawakami; Hideto Miyake

  AIP Advances, Dec. 2019, Peer-reviewed

  
• Intrinsic exciton transitions of isotopically purified 13C studied by photoluminescence and transmission spectroscopy

  Ryota Ishii; Shinichi Shikata; Tokuyuki Teraji; Hisao Kanda; Hideyuki Watanabe; Mitsuru Funato; Yoichi Kawakami

  Japanese Jounral of Applied Physics, Dec. 2019, Peer-reviewed

  
• 微傾斜AlN(0001)面上へのGaN極薄膜量子井戸の作製と光学特性 (レーザ・量子エレクトロニクス)

  船戸 充; 小林 敬嗣; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Nov. 2019

  
• Self-Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters

  Hirotsugu Kobayashi; Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Advanced Optical Materials, 01 Nov. 2019, Peer-reviewed

  
• Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates

  Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Journal of Crystal Growth, 15 Sep. 2019, Peer-reviewed

  
• Pushing the limits of deep-ultraviolet scanning near-field optical microscopy

  Ryota Ishii; Mitsuru Funato; Yoichi Kawakami

  APL Photonics, Jul. 2019, Peer-reviewed

  
• Micro-photoluminescence mapping of surface plasmon-coupled emission from InGaN/GaN quantum wells

  Koichi Okamoto; Kazutaka Tateishi; Kaoru Tamada; Mitsuru Funato; Yoichi Kawakami

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2019, Peer-reviewed

  
• Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells

  Kazutaka Tateishi; Pangpang Wang; Sou Ryuzaki; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto; Kaoru Tamada

  APPLIED PHYSICS EXPRESS, May 2019, Peer-reviewed

  
• Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation

  Atsushi Sakaki; Mitsuru Funato; Munehiko Miyano; Toshiyuki Okazaki; Yoichi Kawakami

  Scientific Reports, Dec. 2019, Peer-reviewed

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• AlxGa1−xN-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination

  Minehiro Hayakawa; Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Advanced Optical Materials, 18 Jan. 2019, Peer-reviewed

  
• Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy

  Ryota Ishii; Shinichi Shikata; Tokuyuki Teraji; Hisao Kanda; Hideyuki Watanabe; Mitsuru Funato; Yoichi Kawakami

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2019, Peer-reviewed

  
• Red-emitting In x Ga1−x N/In y Ga1−y N quantum wells grown on lattice-matched In y Ga1−y N/ScAlMgO4(0001) templates

  Takuya Ozaki; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Jan. 2019, Peer-reviewed

  
• Deep-ultraviolet near band-edge emissions from nano-polycrystalline diamond

  Ryota Ishii; Rei Fukuta; Fumitaro Ishikawa; Masafumi Matsushita; Hiroaki Ohfuji; Toru Shinmei; Tetsuo Irifune; Mitsuru Funato; Yoichi Kawakami

  High Pressure Research, 01 Jan. 2019

  
• Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-x N -related Materials

  Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Physical Review Applied, 11 Dec. 2018, Peer-reviewed

  
• GaN/AlN極薄膜量子井戸の作製と偏光特性 (レーザ・量子エレクトロニクス)

  船戸 充; 市川 修平; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2018

  
• Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

  Yoshinobu MATSUDA; Mitsuru FUNATO; Yoichi KAWAKAMI

  IEICE Transactions on Electronics, 01 Jul. 2018, Peer-reviewed

  
• AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes

  Ryota Akaike; Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, Jun. 2018, Peer-reviewed

  
• Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells

  Atsushi Sakaki; Mitsuru Funato; Tomoaki Kawamura; Jun Araki; Yoichi Kawakami

  Applied Physics Express, 01 Mar. 2018, Peer-reviewed

  
• 表面プラズモン共鳴によるInGaN/GaN多重量子井戸の発光増強 (レーザー計測とその応用)

  村尾 文弥; 中村 俊樹; 松山 哲也; 和田 健司; 船戸 充; 川上 養一; 岡本 晃一

  レーザー学会研究会報告 = Reports the on topical meeting of the Laser Society of Japan, Jan. 2018, Peer-reviewed

  
• <大学の研究・動向>近接場光学顕微鏡の開発 : 光材料物性解明のためのツール開拓を目指して

  川上 養一; 船戸 充; 石井 良太

  Cue : 京都大学電気関係教室技術情報誌, Jan. 2018

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• 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定

  船戸 充; 市川 修平; 川上 養一

  京都大学物性科学センター誌 : LTMセンター誌, Jan. 2018, Peer-reviewed

  
• Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells

  Ken Kataoka; Mitsuru Funato; Yoichi Kawakami

  Applied Physics Express, 01 Dec. 2017, Peer-reviewed

  
• Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

  Kazutaka Tateishi; Pangpang Wang; Sou Ryuzaki; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto; Kaoru Tamada

  APPLIED PHYSICS LETTERS, Oct. 2017, Peer-reviewed

  
• Origin of temperature-induced luminescence peak shifts from semipolar (11(2)over-bar2) InxGa1-xN quantum wells

  Takuya Ozaki; Mitsuru Funato; Yoichi Kawakami

  PHYSICAL REVIEW B, Sep. 2017, Peer-reviewed

  
• High-efficiency light emission by means of exciton-surface-plasmon coupling

  Koichi Okamoto; Mitsuru Funato; Yoichi Kawakami; Kaoru Tamada

  JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C-PHOTOCHEMISTRY REVIEWS, Sep. 2017, Peer-reviewed

  
• Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities

  Yoshinobu Matsuda; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, Jul. 2017, Peer-reviewed

  
• Effects of Al and N-2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

  Katsuhiro Kishimoto; Mitsuru Funato; Yoichi Kawakami

  CRYSTALS, May 2017, Peer-reviewed

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• Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells

  Ken Kataoka; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, Mar. 2017, Peer-reviewed

  
• Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates

  Mitsuru Funato; Mami Shibaoka; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, Feb. 2017, Peer-reviewed

  
• Optical properties of AlGaN quantum wires formed on AlN with macrostep surface

  早川 峰洋; 林 佑樹; 長瀬 勇樹; 市川 修平; 熊本 恭介; 柴岡 真美; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Nov. 2017

  
• Plasmonics toward high efficiency LEDs from the visible to the deep UV region

  K. Okamoto; M. Funato; Y. Kawakami; N. Okada; K. Tadatomo; K. Tomada

  LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXI, 2017, Peer-reviewed

  
• Design of Al-rich AlGaN quantum well structures for efficient UV emitters

  Mitsuru Funato; Shuhei Ichikawa; Kyosuke Kumamoto; Yoichi Kawakami

  GALLIUM NITRIDE MATERIALS AND DEVICES XII, 2017, Peer-reviewed, Invited

  
• Control of Crystal Morphologies and Interface Structures of AlN Grown on Sapphire by Elementary Source Vapor Phase Epitaxy

  PeiTsen Wu; Katsuhiro Kishimoto; Mitsuru Funato; Yoichi Kawakami

  CRYSTAL GROWTH & DESIGN, Nov. 2016, Peer-reviewed

  
• Impact of Radiative and Nonradiative Recombination Processes on the Efficiency-Droop Phenomenon in InxGa1-xN Single Quantum Wells Studied by Scanning Near-Field Optical Microscopy

  Yoichi Kawakami; Akio Kaneta; Akira Hashiya; Mitsuru Funato

  PHYSICAL REVIEW APPLIED, Oct. 2016, Peer-reviewed

  
• Control of GaN facet structures through Eu doping toward achieving semipolar {1(1)over-bar01} and {2(2)over-bar01} InGaN/GaN quantum wells

  Takanori Kojima; Shota Takano; Ryosuke Hasegawa; Dolf Timmerman; Atsushi Koizumi; Mitsuru Funato; Yoichi Kawakami; Yasufumi Fujiwara

  APPLIED PHYSICS LETTERS, Oct. 2016, Peer-reviewed

  
• Evaluating the well-to-well distribution of radiative recombination rates in semi-polar (11(2)over-bar2) InGaN multiple-quantum-well light-emitting diodes

  Mitsuru Funato; Kohei Matsufuji; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, Jul. 2016, Peer-reviewed

  
• Approaches to highly efficient UV emitters based on AlGaN quantum wells

  S. Ichikawa; M. Funato; Y. Kawakami

  Proc. of SPIE, Feb. 2016, Peer-reviewed, Invited

  
• Highly efficient UV emission with semipolar quantum wells

  S. Ichikawa; M. Funato; Y. Kawakami

  SPIE Newsroom Lasers & Sources, Feb. 2016

  
• InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (11(2)over-bar2) GaN substrates

  Junichi Nishinaka; Mitsuru Funato; Ryohei Kido; Yoichi Kawakami

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jan. 2016, Peer-reviewed

  
• Spatio-temporally Resolved Spectroscopy of InGaN-based Visible Emitters Using Scanning Near-field Optical Microscopes

  船戸 充; 川上 養一

  光学 = Japanese journal of optics : publication of the Optical Society of Japan, Jan. 2016, Peer-reviewed

  
• Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells

  松田 祥伸; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Dec. 2016

  
• Crystal growth of bulk AlN by a clean process

  岸元 克浩; 呉 珮岑; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Dec. 2016

  
• Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy

  PeiTsen Wu; Mitsuru Funato; Yoichi Kawakami

  SCIENTIFIC REPORTS, Nov. 2015, Peer-reviewed

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• Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

  Mitsuru Funato; Ryan G. Banal; Yoichi Kawakami

  AIP ADVANCES, Nov. 2015, Peer-reviewed

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• InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates

  Takuya Ozaki; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, Jun. 2015, Peer-reviewed

  
• Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films

  Kazutaka Tateishi; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto; Kaoru Tamada

  APPLIED PHYSICS LETTERS, Mar. 2015, Peer-reviewed

  
• Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes

  Yoichi Kawakami; Kohei Inoue; Akio Kaneta; Koichi Okamoto; Mitsuru Funato

  JOURNAL OF APPLIED PHYSICS, Mar. 2015, Peer-reviewed

  
• Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells

  Yoshiya Iwata; Takao Oto; David Gachet; Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, Mar. 2015, Peer-reviewed

  
• Markedly distinct growth characteristics of semipolar (11(2)over-bar2) and ((1)over-bar(1)over-bar2(2)over-bar) InGaN epitaxial layers

  Junichi Nishinaka; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS LETTERS, Feb. 2015, Peer-reviewed

  
• Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

  Yoshiya Iwata; Ryan G. Banal; Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, Feb. 2015, Peer-reviewed

  
• Development of Dual-Probe Scanning Near-Field Optical Microscopy

  川上 養一; 金田 昭男; 船戸 充

  レーザー研究 = The review of laser engineering : レーザー学会誌, Jan. 2015, Peer-reviewed

  
• 多波長励起発光分離法を用いたInGaN薄膜のラマン散乱分光 (電子部品・材料)

  石戸 亮祐; 石井 良太; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2015

  
• Semi/non-polar nitride quantum wells for high-efficient light emitters

  Mitsuru Funato; Yoichi Kawakami

  GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, Peer-reviewed

  
• Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers

  石戸 亮祐; 石井 良太; 船戸 充

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2015

  
• Effects of strong electron-hole exchange and exciton-phonon interactions on the exciton binding energy of aluminum nitride

  Ryota Ishii; Mitsuru Funato; Yoichi Kawakami

  JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2014, Peer-reviewed

  
• Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates

  Takuya Ozaki; Yoshinori Takagi; Junichi Nishinaka; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, Sep. 2014, Peer-reviewed

  
• High quality semipolar (1(1)over-bar02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities

  S. Ichikawa; Y. Iwata; M. Funato; S. Nagata; Y. Kawakami

  APPLIED PHYSICS LETTERS, Jun. 2014, Peer-reviewed

  
• Optical gain characteristics in Al-rich AlGaN/AlN quantum wells

  Takao Oto; Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS LETTERS, May 2014, Peer-reviewed

  
• Bistable nanofacet structures on vicinal AlN(0001) surfaces

  Mitsuru Funato; Yuki Hayashi; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• Deep ultraviolet optical properties of AlGaN-based quantum wells and their application to electron-beam pumped emitters

  船戸 充; 川上 養一

  オプトロニクス, Feb. 2014

  
• 格子整合系ScAlMgO?基板上でのGaN系窒化物半導体の結晶成長 (レーザ・量子エレクトロニクス)

  尾崎 拓也; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2014

  
• (Al, Ga)N系半導体の物性予測に向けたGaNとAlNの物性定数の同定(<特集>固体紫外光源を目指した窒化物半導体結晶成長の最前線)

  石井 良太; 船戸 充; 川上 養一

  日本結晶成長学会誌, Jan. 2014, Peer-reviewed

  
• Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO_4

  OZAKI Takuya; FUNATO Mitsuru; KAWAKAMI Yoichi

  Technical report of IEICE. LQE, Jan. 2014

  
• Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures

  Ken Kataoka; Masanori Yamaguchi; Kensuke Fukushima; Mitsuru Funato; Yoichi Kawakami

  GALLIUM NITRIDE MATERIALS AND DEVICES IX, 2014, Peer-reviewed

  
• Optical Gain Spectra of a (0001) InGaN Green Laser Diode

  Mitsuru Funato; Yoon Seok Kim; Yoshiaki Ochi; Akio Kaneta; Yoichi Kawakami; Takashi Miyoshi; Shin-ichi Nagahama

  APPLIED PHYSICS EXPRESS, Dec. 2013, Peer-reviewed

  
• Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

  Mitsuru Funato; Yoon Seok Kim; Takayuki Hira; Akio Kaneta; Yoichi Kawakami; Takashi Miyoshi; Shin-ichi Nagahama

  APPLIED PHYSICS EXPRESS, Nov. 2013, Peer-reviewed

  
• Crack-free thick AlN films obtained by NH3 nitridation of sapphire substrates

  Ryan G. Banal; Yosuke Akashi; Kazuhisa Matsuda; Yuki Hayashi; Mitsuru Funato; Yoichi Kawakami

  Japanese Journal of Applied Physics, Aug. 2013, Peer-reviewed

  
• Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress

  Ryota Ishii; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami

  PHYSICAL REVIEW B, Jun. 2013, Peer-reviewed

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• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)

  Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, Jun. 2013, Peer-reviewed

  
• Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects

  R. Bardoux; M. Funato; A. Kaneta; Y. Kawakami; A. Kikuchi; K. Kishino

  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, May 2013, Peer-reviewed

  
• Heteroepitaxy between wurtzite and corundum materials

  Yuki Hayashi; Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, May 2013, Peer-reviewed

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• Huge electron-hole exchange interaction in aluminum nitride

  Ryota Ishii; Mitsuru Funato; Yoichi Kawakami

  PHYSICAL REVIEW B, Apr. 2013, Peer-reviewed

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• Grain size dependence of surface plasmon enhanced photoluminescence

  Xiaoying Xu; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto; Kaoru Tamada

  Optics Express, 11 Feb. 2013, Peer-reviewed

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• Strong optical polarization in nonpolar (1(1)over-bar00) AlxGa1-xN/AlN quantum wells

  Mitsuru Funato; Kazuhisa Matsuda; Ryan G. Banal; Ryota Ishii; Yoichi Kawakami

  PHYSICAL REVIEW B, Jan. 2013, Peer-reviewed

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• Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures

  Richard Bardoux; Mitsuru Funato; Akio Kaneta; Yoichi Kawakami; Akihiko Kikuchi; Katsumi Kishino

  OPTICAL MATERIALS EXPRESS, Dec. 2012, Peer-reviewed

  
• Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {20(2)over-bar1} GaN Substrate Probed by Scanning Near-Field Optical Microscopy

  Akio Kaneta; Yoon-Seok Kim; Mitsuru Funato; Yoichi Kawakami; Yohei Enya; Takashi Kyono; Masaki Ueno; Takao Nakamura

  APPLIED PHYSICS EXPRESS, Oct. 2012, Peer-reviewed

  
• Homoepitaxy and Photoluminescence Properties of (0001) AlN

  Mitsuru Funato; Kazuhisa Matsuda; Ryan G. Banal; Ryota Ishii; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, Aug. 2012, Peer-reviewed

  
• Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells

  Junichi Nishinaka; Mitsuru Funato; Yoichi Kawakami

  JOURNAL OF APPLIED PHYSICS, Aug. 2012, Peer-reviewed

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• Instrumentation for dual-probe scanning near-field optical microscopy

  A. Kaneta; R. Fujimoto; T. Hashimoto; K. Nishimura; M. Funato; Y. Kawakami

  REVIEW OF SCIENTIFIC INSTRUMENTS, Aug. 2012, Peer-reviewed

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• Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy

  R. Fujimoto; A. Kaneta; K. Okamoto; M. Funato; Y. Kawakami

  APPLIED SURFACE SCIENCE, Jul. 2012, Peer-reviewed

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• Semipolar {n(n)over-bar01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique

  Mitsuru Funato; Teruhisa Kotani; Takeshi Kondou; Yoichi Kawakami

  APPLIED PHYSICS LETTERS, Apr. 2012, Peer-reviewed

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• Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells

  T. Suski; G. Staszczak; S. P. Lepkowski; P. Perlin; R. Czernecki; I. Grzegory; M. Funato; Y. Kawakami

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Mar. 2012, Peer-reviewed

  
• 蛍光体フリー多色LED : テイラーメイド光源の実現に向けて (特集 LEDと照明)

  船戸 充; 川上 養一

  ディスプレイ, Jan. 2012

  
• Strain-Induced Effects on the Electronic Band Structure of AlN

  ISHII Ryota; KANETA Akio; BANAL Ryan; FUNATO Mitsuru; KAWAKAMI Yoichi

  電子情報通信学会技術研究報告. CPM, 電子部品・材料, Nov. 2011

  
• Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes

  K. Kojima; A. A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda

  JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

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• Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence

  G. Staszczak; T. Suski; A. Khachapuridze; P. Perlin; M. Funato; Y. Kawakami

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jul. 2011, Peer-reviewed

  
• Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

  Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS LETTERS, Jul. 2011, Peer-reviewed

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• Micromirror arrays to assess luminescent nano-objects

  Yoichi Kawakami; Akinobu Kanai; Akio Kaneta; Mitsuru Funato; Akihiko Kikuchi; Katsumi Kishino

  REVIEW OF SCIENTIFIC INSTRUMENTS, May 2011, Peer-reviewed

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• Single mode emission and non-stochastic laser system based on disordered point-sized structures: toward a tuneable random laser

  R. Bardoux; A. Kaneta; M. Funato; K. Okamoto; Y. Kawakami; A. Kikuchi; K. Kishino

  OPTICS EXPRESS, May 2011, Peer-reviewed

  
• Optical Gain Spectroscopy of a Semipolar {20(2)over-bar1}-Oriented Green InGaN Laser Diode

  Yoon Seok Kim; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami; Takashi Kyono; Masaki Ueno; Takao Nakamura

  APPLIED PHYSICS EXPRESS, May 2011, Peer-reviewed

  
• Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation

  Yoshiya Iwata; Takao Oto; Akio Kaneta; Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, Peer-reviewed

  
• 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

  Takao Oto; Ryan G. Banal; Ken Kataoka; Mitsuru Funato; Yoichi Kawakami

  NATURE PHOTONICS, Nov. 2010, Peer-reviewed

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• Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy : Efficiency droop mechanism assessed by SNOM

  HASHIYA Akira; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, Nov. 2010

  
• 100mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping

  OTO Takao; BANAL Ryan G.; KATAOKA Ken; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, Nov. 2010

  
• <高校生のページ>固体照明が拓く明るい世界

  川上 養一; 船戸 充

  Cue : 京都大学電気関係教室技術情報誌, Sep. 2010

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• Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening

  Kazunobu Kojima; Atsushi A. Yamaguchi; Mitsuru Funato; Yoichi Kawakami; Susumu Noda

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2010, Peer-reviewed

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• Valence band effective mass of non-c-plane nitride heterostructures

  K. Kojima; M. Funato; Y. Kawakami; S. Noda

  Journal of Applied Physics, 15 Jun. 2010, Peer-reviewed

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• Strain states in semipolar III-nitride semiconductor quantum wells

  M. Funato; D. Inoue; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai

  JOURNAL OF APPLIED PHYSICS, Jun. 2010, Peer-reviewed

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• Valence band effective mass of non-c-plane nitride heterostructures

  K. Kojima; M. Funato; Y. Kawakami; S. Noda

  JOURNAL OF APPLIED PHYSICS, Jun. 2010, Peer-reviewed

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• Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

  V. Ramesh; A. Kikuchi; K. Kishino; M. Funato; Y. Kawakami

  JOURNAL OF APPLIED PHYSICS, Jun. 2010, Peer-reviewed

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• Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN

  Ryota Ishii; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2010, Peer-reviewed

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• All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

  Ryota Ishii; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami; Atsushi A. Yamaguchi

  PHYSICAL REVIEW B, Apr. 2010, Peer-reviewed

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• Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

  Y. Kawakami; A. Kaneta; L. Su; Y. Zhu; K. Okamoto; M. Funato; A. Kikuchi; K. Kishino

  JOURNAL OF APPLIED PHYSICS, Jan. 2010, Peer-reviewed

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• Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells

  Mitsuru Funato; Masaya Ueda; Daisuke Inoue; Yoichi Kawakami; Yukio Narukawa; Takashi Mukai

  APPLIED PHYSICS EXPRESS, 2010, Peer-reviewed

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• Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy

  Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, Peer-reviewed

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• Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells

  Takao Oto; Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, Peer-reviewed

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• Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy

  Akio Kaneta; Tsuneaki Hashimoto; Katsuhito Nishimura; Mitsuru Funato; Yoichi Kawakami

  APPLIED PHYSICS EXPRESS, 2010, Peer-reviewed

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• Impact of Nonpolar Plane for Deep Ultraviolet Laser Diodes Based on AlGaN/AlN Quantum Wells

  K. Kojima; A. A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda

  22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010

  
• Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20(2)over-bar1} GaN Substrates

  Mitsuru Funato; Akio Kaneta; Yoichi Kawakami; Yohei Enya; Koji Nishizuka; Masaki Ueno; Takao Nakamura

  APPLIED PHYSICS EXPRESS, 2010, Peer-reviewed

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• Optical Anisotropy Control of Non-c-plane InGaN Quantum Wells

  Kazunobu Kojima; Hiroaki Kamon; Mitsuru Funato; Yoichi Kawakami

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2009, Peer-reviewed

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• Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

  Ryan G. Banal; Mitsuru Funato; Ybichi Kawakami

  JOURNAL OF CRYSTAL GROWTH, May 2009, Peer-reviewed

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• Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

  Mitsuru Funato; Yoichi Kawakami

  MRS BULLETIN, May 2009, Peer-reviewed

  
• Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk

  R. Bardoux; A. Kaneta; M. Funato; Y. Kawakami; A. Kikuchi; K. Kishino

  PHYSICAL REVIEW B, Apr. 2009, Peer-reviewed

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• Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69)

  R. G. Banal; M. Funato; Y. Kawakami

  PHYSICAL REVIEW B, Mar. 2009, Peer-reviewed

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• Surface diffusion during metalorganic vapor phase epitaxy of AlN

  Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 2009, Peer-reviewed

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• Surface diffusion during metalorganic vapor phase epitaxy of AlN

  Ryan G. Banal; Mitsuru Funato; Yoichi Kawakami

  Physica Status Solidi (C) Current Topics in Solid State Physics, 2009, Peer-reviewed

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• Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers

  M. Ueda; M. Funato; K. Kojima; Y. Kawakami; Y. Narukawa; T. Mukai

  PHYSICAL REVIEW B, Dec. 2008, Peer-reviewed

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• Semipolar InGaN/GaN Quantum Wells for Highly Functional Light Emitters

  Mitsuru Funato; Yoichi Kawakami; Yukio Narukawa; Takashi Mukai

  Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices, 16 Sep. 2008, Peer-reviewed

  
• Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

  A. Kaneta; M. Funato; Y. Kawakami

  PHYSICAL REVIEW B, Sep. 2008, Peer-reviewed

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• Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells

  M. Funato; K. Hayashi; M. Ueda; Y. Kawakami; Y. Narukawa; T. Mukai

  APPLIED PHYSICS LETTERS, Jul. 2008, Peer-reviewed

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• Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy

  Ryan G. Banal; Mitsuru Funato; Yoichi Kawakamia

  APPLIED PHYSICS LETTERS, Jun. 2008, Peer-reviewed

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• Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations

  M. Funato; Y. Kawakami

  JOURNAL OF APPLIED PHYSICS, May 2008, Peer-reviewed

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• Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting

  Mitsuru Funato; Takeshi Kondou; Keita Hayashi; Shotaro Nishiura; Masaya Ueda; Yoichi Kawakami; Yukio Narukawa; Takashi Mukai

  APPLIED PHYSICS EXPRESS, Jan. 2008, Peer-reviewed

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• Assessment and modification of recombination dynamics in In xGa1-xN-based quantum wells

  Yoichi Kawakami; Akio Kaneta; Mitsuru Funato

  Materials Science Forum, 2008, Peer-reviewed

  
• Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (11(2)over-bar2) GaN substrate

  K. Kojima; M. Funato; Y. Kawakami; S. Masui; S. Nagahama; T. Mukai

  APPLIED PHYSICS LETTERS, Dec. 2007

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• Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (11(2)over-bar2) GaN substrate

  K. Kojima; M. Funato; Y. Kawakami; S. Masui; S. Nagahama; T. Mukai

  APPLIED PHYSICS LETTERS, Dec. 2007, Peer-reviewed

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• Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source

  Mitsuru Funato; Shinji Ujita; Yoichi Kawakami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Oct. 2007

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• Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN

  Kazunobu Kojima; Masaya Ueda; Mitsuru Funato; Yoichi Kawakami

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jun. 2007

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• Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes

  K. Kojima; Ulrich T. Schwarz; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai

  OPTICS EXPRESS, Jun. 2007

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• Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

  Y. Kawakami; K. Nishizuka; D. Yamada; A. Kaneta; M. Funato; Y. Narukawa; T. Mukai

  APPLIED PHYSICS LETTERS, Jun. 2007

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• Comparison between optical gain spectra of InxGa1-xN/In0.02Ga0.98N laser diodes emitting at 404 nm and 470 nm

  K. Kojima; M. Funato; Y. Kawakami; H. Braun; U. T. Schwarz; S. Nagahama; T. Mukai

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jun. 2007

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• Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures

  M Ueda, K Hayashi; T Kondou; M Funato; Y Kawakami; Y Narukawa; T Mukai

  physica status solidi (c), Jun. 2007

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• Comparison between optical gain spectra of in xGa 1-xN/In 0.02Ga 0.98N laser diodes emitting at 404 nm and 470 nm

  K. Kojima; M. Funato; Y. Kawakami; H. Braun; U. T. Schwarz; S. Nagahama; T. Mukai

  Physica Status Solidi (A) Applications and Materials Science, 01 Jun. 2007, Peer-reviewed

  
• Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets

  M. Ueda; T. Kondou; K. Hayashi; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai

  APPLIED PHYSICS LETTERS, Apr. 2007

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• Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures

  M. Ueda; K. Hayashi; T. Kondou; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, Peer-reviewed

  
• Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm

  K. Kojima; M. Funato; Y. Kawakami; S. Nagahama; T. Mukai; H. Braun; U. T. Schwarz

  APPLIED PHYSICS LETTERS, Dec. 2006

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• Epitaxial growth and optical properties of semipolar (11(2)over-bar2) GaN and InGaN/GaN quantum wells on GaN bulk substrates

  M. Ueda; K. Kojima; M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai

  APPLIED PHYSICS LETTERS, Nov. 2006

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• Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns

  Y. Kawakami; S. Suzuki; A. Kaneta; M. Funato; A. Kikuchi; K. Kishino

  APPLIED PHYSICS LETTERS, Oct. 2006

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• Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers

  Kazunobu Kojima; Mitsuru Funato; Yoichi Kawakami; Yukio Narukawa; Takashi Mukai

  SOLID STATE COMMUNICATIONS, Oct. 2006

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• Carrier transport and optical properties of InGaNSQW with embedded AlGaN delta-layer

  Jonwoon Park; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami

  IEEE JOURNAL OF QUANTUM ELECTRONICS, Sep. 2006

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• Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates

  Mitsuru Funato; Masaya Ueda; Yoichi Kawakami; Yukio Narukawa; Takao Kosugi; Masayoshi Takahashi; Takashi Mukai

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Jul. 2006

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• Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors

  M Funato; T Kotani; T Kondou; Y Kawakami; Y Narukawa; T Mukai

  APPLIED PHYSICS LETTERS, Jun. 2006

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• Optical properties of CdSe/MgS monolayer quantum wells and self-assembled quantum dots

  M. Funato; K. Omae; Y. Kawakami; Sg. Fujita; C. Bradford; A. Balocchi; K. A. Prior; B. C. Cavenett

  PHYSICAL REVIEW B, Jun. 2006, Peer-reviewed

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• Optical properties of CdSe MgS monolayer quantum wells and self-assembled quantum dots

  M. Funato; K. Omae; Y. Kawakami; Sg Fujita; C. Bradford; A. Balocchi; K. A. Prior; B. C. Cavenett

  Physical Review B - Condensed Matter and Materials Physics, 2006

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• Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

  Akio Kaneta; Mitsuru Funato; Yukio Narukawa; Takashi Mukai; Yoichi Kawakami

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, Peer-reviewed

  
• Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11(2)over-bar2} microfacets

  K Nishizuka; M Funato; Y Kawakami; Y Narukawa; T Mukai

  APPLIED PHYSICS LETTERS, Dec. 2005

  
• Artificial control of ZnO nanodots by ion-beam nanopatterning

  SW Kim; M Ueda; M Funato; S Fujita; S Fujita

  JOURNAL OF APPLIED PHYSICS, May 2005

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• Optically pumped lasing and gain formation properties in blue InxGa1-xN MQWs

  K Kojima; A Shikanai; K Omae; M Funato; Y Kawakami; Y Narukawa; T Mukai; S Fujita

  PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Oct. 2004

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• Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

  K Nishizuka; M Funato; Y Kawakami; S Fujita; Y Narukawa; T Mukai

  APPLIED PHYSICS LETTERS, Oct. 2004

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• Growth and characterization of MgS/CdSe self-assembled quantum dots

  C Bradford; B Urbaszek; M Funato; TCM Graham; EJ McGhee; RJ Warburton; KA Prior; B Cavenett

  JOURNAL OF CRYSTAL GROWTH, Apr. 2003

  
• Photoluminescence properties of MgS/CdSe quantum wells and quantum dots

  M Funato; A Balocchi; C Bradford; KA Prior; BC Cavenett

  APPLIED PHYSICS LETTERS, Jan. 2002

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• Photoluminescence studies of the formation of MgS/CdSe quantum dots grown by molecular beam epitaxy

  M Funato; C Bradford; A Balocchi; JM Smith; KA Prior; BC Cavenett

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jan. 2002

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• Growth and spectroscopy of II-VI CdSe quantum dots

  B. C. Cavenett; X. Tang; C. Bradford; B. Urbaszek; T. C.M. Graham; R. J. Warburton; M. Funato; K. A. Prior

  Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 2002, Peer-reviewed

  
• Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers

  M Funato; S Yamamoto; K Kaisei; K Shimogami; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Dec. 2001

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• Growth mechanism of hexagonal GaN on AlAs-pregrown GaAs(001) and {11n} substrates

  M Funato; S Fujita; S Yamamoto; K Kaisei; K Shimogami; S Fujita

  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Nov. 2001

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• Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001)

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Physical Review B - Condensed Matter and Materials Physics, 04 Apr. 2001

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• Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001)

  M Funato; S Fujita; S Fujita

  PHYSICAL REVIEW B, Apr. 2001, Peer-reviewed

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• AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy

  T Ishido; M Funato; A Hamaguchi; S Fujita; S Fujita

  JOURNAL OF CRYSTAL GROWTH, Dec. 2000

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• Integration of GaN with Si using a AuGe-mediated wafer bonding technique

  M Funato; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Dec. 2000

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• Single-phase hexagonal GaN grown on AlAs/GaAs(001)

  M Funato; T Ishido; A Hamaguchi; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Jul. 2000

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• Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures

  M Funato; S Fujita; S Fujita

  JOURNAL OF CRYSTAL GROWTH, Jun. 2000

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• The role of growth rates and buffer layer structures for quality improvement of cubic GaN grown on GaAs

  M Ogawa; M Funato; T Ishido; S Fujita; S Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Feb. 2000

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• Six-bilayer periodic structures in GaN grown on GaAs(001)

  M Funato; T Ishido; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Jan. 2000

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• A cause of the crystalline orientation in hexagonal GaN grown on AIAs/GaAs(001)

  A Hamaguchi; M Funato; T Ishido; S Fujita; S Fujita

  PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, Peer-reviewed

  
• Energy states in ZnSe-GaAs heterovalent quantum structures

  M Funato; S Fujita; S Fujita

  PHYSICAL REVIEW B, Dec. 1999

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• MOVPE growth of high quality cubic GaN on GaAs: The role of growth rates

  M Funato; M Ogawa; T Ishido; S Fujita; S Fujita

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Nov. 1999, Peer-reviewed

  
• Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures

  M Funato; S Aoki; S Fujita; S Fujita

  JOURNAL OF APPLIED PHYSICS, Feb. 1999, Peer-reviewed

  
• Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance

  Jiti Nukeaw; Yasufumi Fujiwara; Yoshikazu Takeda; Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Thin Solid Films, 04 Dec. 1998, Peer-reviewed

  
• Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)

  M Funato; S Aoki; S Fujita; S Fujita

  JOURNAL OF APPLIED PHYSICS, Aug. 1998, Peer-reviewed

  
• Deep states in nitrogen-doped p-ZnSe

  M Funato; S Fujita; S Fujita

  JOURNAL OF APPLIED PHYSICS, Mar. 1998, Peer-reviewed

  
• A comparative study on deep levels in p-ZnSe grown by MBE, MOMBE and MOVPE

  M Funato; S Fujita; S Fujita

  JOURNAL OF CRYSTAL GROWTH, Feb. 1998, Peer-reviewed

  
• Tunable band offsets in ZnSe/GaAs heterovalent heterostructures grown by metalorganic vapor phase epitaxy

  M Funato; S Aoki; S Fujita; S Fujita

  JOURNAL OF APPLIED PHYSICS, Sep. 1997, Peer-reviewed

  
• Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

  Y Narukawa; Y Kawakami; M Funato; S Fujita; S Fujita; S Nakamura

  APPLIED PHYSICS LETTERS, Feb. 1997, Peer-reviewed

  
• Formation of an atomically flat surface of ZnSe on GaAs(001) by metalorganic vapor phase epitaxy

  M Funato; S Aoki; S Fujita; S Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jan. 1997, Peer-reviewed

  
• Initial growth behavior of GaAs on ZnSe in MOVPE

  M Funato; S Aoki; S Fujita; S Fujita

  JOURNAL OF CRYSTAL GROWTH, Jan. 1997, Peer-reviewed

  
• Growth of p-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

  J Suda; M Tsuka; D Honda; M Funato; Y Kawakami; S Fujita; S Fujita

  JOURNAL OF ELECTRONIC MATERIALS, Feb. 1996, Peer-reviewed

  
• Effects of GaAs buffer layer and lattice-matching on deep levels in Zn(S)Se/GaAs heterostructures

  M Funato; H Kitani; S Fujita; S Fujita

  JOURNAL OF ELECTRONIC MATERIALS, Feb. 1996, Peer-reviewed

  
• Effects of high excitation on localized excitons in cubic ZnCdS lattice matched to GaAs

  Y Kawakami; M Funato; S Fujita; S Fujita; Y Yamada; T Mishina; Y Masumoto

  JOURNAL OF CRYSTAL GROWTH, Feb. 1996, Peer-reviewed

  
• MOVPE GROWTH AND CHARACTERIZATION OF ZNSE-GAAS HETEROVALENT HETEROSTRUCTURES

  M FUNATO; S FUJITA; S FUJITA

  BULLETIN OF MATERIALS SCIENCE, Aug. 1995, Peer-reviewed

  
• Time-resolved spectroscopy of excitonic luminescence in cubic ZnCdS lattice matched to GaAs

  Y. Kawakami; M. Funato; Sz. Fujita; Sg. Fujita; Y. Yamada; Y. Masumoto

  Proceedings of the 22nd International Conference on the Physics of Semiconductors, 1995

  
• GROWTH-BEHAVIOR OF GAAS IN METALORGANIC VAPOR-PHASE EPITAXY ONTO ZNSE

  M FUNATO; S FUJITA; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Sep. 1994, Peer-reviewed

  
• Localized excitons in cubic Zn_1-xCd_xS lattice matched to GaAs

  Y. Kawakami; M. Funato; Sz. Fujita; Sg. Fujita; Y. Yamada; Y. Masumoto

  Physical Review B, 1994, Peer-reviewed

  
• STRUCTURAL-ANALYSIS OF ZNSE-GAAS QUANTUM-WELLS

  M FUNATO; S FUJITA; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Aug. 1993, Peer-reviewed

  
• FABRICATION OF SHORT-PERIOD ZNSE-GAAS SUPERLATTICES BY MOVPE

  M FUNATO; S FUJITA; S FUJITA

  SEMICONDUCTOR HETEROSTRUCTURES FOR PHOTONIC AND ELECTRONIC APPLICATIONS, 1993, Peer-reviewed

  
• METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE-GAAS MULTILAYERED STRUCTURES

  M FUNATO; M ISHII; PA MURAWALA; O TSUJI; S FUJITA; S FUJITA

  JOURNAL OF CRYSTAL GROWTH, Feb. 1992, Peer-reviewed

  
• ANNEALING BEHAVIOR OF GAAS ZNSE MULTILAYERED HETEROSTRUCTURES GROWN BY OMVPE

  PA MURAWALA; M FUNATO; O TSUJI; S FUJITA; S FUJITA

  HETEROEPITAXY OF DISSIMILAR MATERIALS, 1991, Peer-reviewed

  
• ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF CUBIC ZNCDS LATTICE-MATCHED TO GAAS SUBSTRATE

  S FUJITA; S HAYASHI; M FUNATO; S FUJITA

  JOURNAL OF CRYSTAL GROWTH, Jan. 1990, Peer-reviewed

  

Misc.

• プラズモニクスによるInGaN/GaN量子井戸の発光増強の顕微フォトルミネセンスマッピング

  岡本晃一; 立石和隆; WANG Pangpang; 龍崎奏; 船戸充; 川上養一; 玉田薫

  プラズモニクスシンポジウム, 2018

  
• GaN微細ストライプ上InGaN量子構造の光学特性

  近藤剛; 小谷晃央; 船戸充; 成川幸男; 向井孝志; 川上養一

  応用物理学会学術講演会講演予稿集, 2005

  
• 微細構造GaNを用いたInGaN細線構造の作製と特性評価

  小谷晃央; 船戸充; 近藤剛; 成川幸男; 向井孝志; 川上養一

  応用物理学関係連合講演会講演予稿集, 2005

  
• 集束イオンビームによる窒化物半導体分布ブラッグ反射鏡の作製

  畑田芳隆; 小谷晃央; 船戸充; 成川幸男; 向井孝志; 川上養一

  応用物理学関係連合講演会講演予稿集, 2005

  
• 非極性面InGaN量子井戸における不均一広がりと偏光の関係

  小島一信; 山口敦史; 船戸充; 川上養一; 野田進

  応用物理学関係連合講演会講演予稿集(CD-ROM), 2010

  
• 無極性面AlGaN/AlN量子井戸の光学特性に関する理論検討

  小島一信; 山口敦史; 船戸充; 川上養一; 野田進

  応用物理学会学術講演会講演予稿集(CD-ROM), 2010

  
• 非c面窒化物半導体量子井戸における価電子帯有効質量

  小島一信; 船戸充; 川上養一; 野田進

  応用物理学関係連合講演会講演予稿集, 2009

  
• 非極性面InGaN量子井戸の偏光制御に関する理論検討

  小島一信; 加門宏章; 船戸充; 川上養一; 長濱慎一; 向井孝志

  応用物理学関係連合講演会講演予稿集, 2008

  
• 非極性面InGaN量子井戸レーザの光学特性

  小島一信; 船戸充; 川上養一; 枡井真吾; 長濱慎一; 向井孝志

  応用物理学関係連合講演会講演予稿集, 2008

  
• InGaN量子井戸レーザの光学利得と内部電界の関係

  小島一信; 船戸充; 川上養一; SCHWARZ U. T.; SCHWARZ U. T.; 長濱慎一; 向井孝志

  応用物理学会学術講演会講演予稿集, 2007

  
• 半極性・無極性InGaN量子井戸の光学的異方性に関する理論解析

  小島一信; 加門宏章; 船戸充; 川上養一

  応用物理学会学術講演会講演予稿集, 2007

  
• 半極性面{1122}バルクGaNにおける面内光学異方性

  小島一信; 加門宏章; 船戸充; 川上養一

  応用物理学関係連合講演会講演予稿集, 2006

  
• In_xGa_1-xN/In_0.02Ga_0.98N量子井戸の光学利得とアンチガイディングファクタの実測

  小島一信; 船戸充; 川上養一; BRAUN H.; SCHWARZ U. T.; 長濱慎一; 向井孝志

  応用物理学会学術講演会講演予稿集, 2006

  
• GaN{11-22}基板上へのGaNのホモエピタキシャル成長

  上田雅也; 小島一信; 船戸充; 川上義一; 成川幸男; 向井孝志

  応用物理学会学術講演会講演予稿集, 2006

  
• アップ・コンバージョン法によるIn_XGa_1-XN低次元量子構造の誘導放出ダイナミクス

  小島一信; 船戸充; 成川幸男; 向井孝志; 川上養一

  応用物理学関係連合講演会講演予稿集, 2005

  
• メタルマスクへの微小開口作製によるInGaNの空間分解分光

  金井聡庸; 小島一信; 船戸充; 成川幸男; 向井孝志; 川上養一

  応用物理学関係連合講演会講演予稿集, 2005

  
• InGaN多重量子井戸構造におけるレーザモードとバッファ層の関係

  小島一信; 鹿内周; 船戸充; 川上養一; 成川幸男; 向井孝志; 藤田茂夫

  応用物理学関係連合講演会講演予稿集, 2004

  
• InGaN低次元量子構造におけるホットキャリア分布

  小島一信; 鹿内周; 船戸充; 成川幸男; 向井孝志; 川上養一

  応用物理学会学術講演会講演予稿集, 2004

  
• InGaN多重量子井戸構造における光学利得の測定 (2)

  小島一信; 鹿内周; 大前邦途; 船戸充; 川上養一; 成川幸男; 向井孝志; 藤田茂夫

  応用物理学会学術講演会講演予稿集, 2003

  
• Effects of thermal annealing and characterization for p-ZnSe grown by photo-assisted MOVPE

  OGATA K.; KERA T.; KAWAGUCHI D.; FUNATO M.; FUJITA Sz.; FUJITA Sg.

  電気学会研究会資料. EFM, 電子材料研究会, 06 Dec. 1995

  
• C-6-8 Thermoelectric properties of InN and GaInN single crystal thin films

  Matsumoto T.; Yamaguchi S.; Yamamoto A.; Funato M.; Kawakami Y.

  Proceedings of the Society Conference of IEICE, 07 Sep. 2006

  
• C-6-9 Thermoelectric properties of InN thin films

  Matsumoto T.; Kaiwa N.; Yamaguchi S.; Yamamoto A.; Funato M.; Kawakami Y.

  Proceedings of the IEICE General Conference, 08 Mar. 2006

  
• Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn

  KANETA Akio; KANAI Akinobu; FUNATO Mitsuru; KAWAKAMI Yoichi; KIKUCHI Akihiko; KISHINO Katsumi

  IEICE technical report, 04 Oct. 2007

  
• Zn(S,Se)-GaAsヘテロエピタキシャル成長と積層構造の作製 : エピタキシーI

  船戸 充; 石井 正宏; 藤田 静雄; 藤田 茂夫

  日本結晶成長学会誌, 25 Jul. 1991

  
• Hexagonal GaN on GaAs(001) Grown by MOVPE and Its Application to Formation of GaN/Si Structure by Wafer Bonding

  YAMAMOTO Shuichiro; FUNATO Mitsuru; FUJITA Shizuo; FUJITA Shigeo

  IEICE technical report. Electron devices, 12 Oct. 2000

  
• MOVPE growth and electrical properties of ZnSe/GaAs and GaAs/ZnSe heterovalent heterostructures

  Funato Mitsuru; Fujita Shizuo; Fujita Shigeo

  IEICE technical report. Electron devices, 17 Nov. 1994

  
• 深紫外CW・時間分解PL分光法による¹²C/¹³C超格子の光学特性評価

  石井良太; 鹿田真一; 寺地徳之; 神田久生; 渡邊幸志; 船戸充; 川上養一

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 2018

  
• 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果

  石井良太; 鹿田真一; 寺地徳之; 神田久生; 渡邊幸志; 船戸充; 川上養一

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2017

  
• Multicolor emission from InGaN/GaN three-dimensional quantum structures

  FUNATO Mitsuru; KOTANI Teruhisa; KONDOU Takeshi; NISHIDUKA Koji; NARUKAWA Yukio; MUKAI Takashi; KAWAKAMI Yoichi

  IEICE technical report, 14 Oct. 2005

  
• Correlation between threading dislocations and recombination dynamics in InGaN quantum wells

  KANETA Akio; FUNATO Mitsuru; NARUKAWA Yukio; MUKAI Takashi; KAWAKAMI Yoichi

  IEICE technical report, 14 Oct. 2005

  
• 顕微蛍光マッピングによる表面プラズモン発光増強の評価

  立石和隆; 船戸充; 川上養一; 岡本晃一; 玉田薫

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2017

  
• InGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価

  立石和隆; 船戸充; 川上養一; 岡本晃一; 玉田薫

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2016

  
• Plasmonics with Aluminum applied to Emission Enhancements

  岡本晃一; 立石和隆; 川元駿; 西田知句; 玉田薫; 船戸充; 川上養一

  電子情報通信学会技術研究報告, 2015

  
• アルミニウムを用いたInGaN系量子井戸の表面プラズモン発光増強

  立石和隆; XU Xiaoying; 船戸充; 川上養一; 岡本晃一; 岡本晃一; 玉田薫

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 2013

  
• High spatial resolution PL mapping of {11-22} InGaN quantum wells by a scanning near field optical microscope

  KANETA Akio; UEDA Masaya; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, 12 Nov. 2009

  
• High spatial resolution PL mapping of {11-22} InGaN quantum wells by a scanning near field optical microscope

  KANETA Akio; UEDA Masaya; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, 12 Nov. 2009

  
• Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface

  Minehiro Hayakawa; Yuki Hayashi; Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

  Proceedings of SPIE - The International Society for Optical Engineering, 2016, Peer-reviewed

  
• Determination of Material Parameters in GaN and AlN for Predicting the Properties of AlGaN-based Semiconductors

  Ishii Ryota; Funato Mitsuru; Kawakami Yoichi

  Journal of the Japanese Association of Crystal Growth, 2014

  
• A novel method for crystallizations of aluminum nitride

  WU PeiTsen; FUNATO Mitsuru; KAWAKAMI Yoichi

  Technical report of IEICE. LQE, 28 Nov. 2013

  
• Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate

  Akio Kaneta; Takayuki Hira; Yoon Seok Kim; Mitsuru Funato; Yoichi Kawakami; Takashi Miyoshi; Shin-Ichi Nagahama

  Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2013, Peer-reviewed

  
• Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates

  KIM Yoon Seok; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi; MIYOSHI Takashi; NAGAHAMA Shin-ichi

  Technical report of IEICE. LQE, 22 Nov. 2012

  
• Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates

  KIM Yoon Seok; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi; MIYOSHI Takashi; NAGAHAMA Shin-ichi

  IEICE technical report. Component parts and materials, 22 Nov. 2012

  
• Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates

  KIM Yoon Seok; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi; MIYOSHI Takashi; NAGAHAMA Shin-ichi

  IEICE technical report. Electron devices, 22 Nov. 2012

  
• Phosphor Free Multicolor LED : to the Realization of Tailor-made Light Source

  船戸 充; 川上 養一

  ディスプレイ, Feb. 2012

  
• Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs

  Kim Yoon Seok; Kaneta Akio; Funato Mitsuru; Kawakami Yoichi; Kyono Takashi; Ueno Masaki; Nakamura Takao

  IEICE technical report. Component parts and materials, 17 Nov. 2011

  
• Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs

  KIM Yoon Seok; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi; KYONO Takashi; UENO Masaki; NAKAMURA Takao

  Technical report of IEICE. LQE, 10 Nov. 2011

  
• Development of phosphor-free white and multi-color light-emitting diodes

  FUNATO Mitsuru; KAWAKAMI Yoichi

  応用物理, 10 Apr. 2011, Peer-reviewed

  
• 100mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping

  OTO Takao; BANAL Ryan G.; KATAOKA Ken; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, 04 Nov. 2010

  
• Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy : Efficiency droop mechanism assessed by SNOM

  HASHIYA Akira; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, 04 Nov. 2010

  
• Influence of inhomogeneous broadening for gain polarization switching in green semipolar InGaN quantum wells

  K. Kojima; A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda

  International Workshop on Nitride Semiconductors 2010 (IWN2010), 22 Sep. 2010

  
• Optical Properties of Semipolar (1122) InGaN Quantum Wells and the Prospects of Green LDs

  FUNATO Mitsuru; UEDA Masaya; KOJIMA Kazunobu; KAWAKAMI Yoichi

  rle, 15 Apr. 2010

  
• 近接場光学顕微鏡によるInGaNナノ構造の発光機構解明と高効率化へのアプローチ (特集 ナノフォトニクス)

  金田 昭男; 船戸 充; 川上 養一

  O plus E, Feb. 2010

  
• Impact of Nonpolar Plane for Deep Ultraviolet Laser Diodes Based on AlGaN/AlN Quantum Wells

  K. Kojima; A. A. Yamaguchi; M. Funato; Y. Kawakami; S. Noda

  22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, Peer-reviewed

  
• Mapping of luminous intensity saturation in InGaN/GaN SQW studied by scanning near-field optical microscopy

  HASHIYA Akira; KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi

  IEICE technical report, 12 Nov. 2009

  
• 半極性{11-22}InGaN量子井戸構造の近接場発光マッピング測定

  金田 昭男; 上田 雅也; 船戸 充; 川上 養一

  電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス,109 (290), pp. 35-38, Nov. 2009

  
• Correlation between Threading Dislocations and Optical Properties in InGaN Quantum Structures Studied by Scanning Near Field Optical Microscope

  KANETA Akio; FUNATO Mitsuru; KAWAKAMI Yoichi

  Journal of the Japanese Association for Crystal Growth, Oct. 2009

  
• Prospects of green LDs based on semipolar InGaN quantum wells

  船戸 充; 川上 養一

  Optronics, Sep. 2009

  
• 蛍光体フリー白色・多色LED (特集 発光デバイスの現状と将来(Part 2)無機発光デバイス)

  川上 養一; 船戸 充

  未来材料, Jul. 2009

  
• Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters

  M. Funato; Y. Kawakami

  2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009, 2009, Peer-reviewed

  
• Multi-color light-emitting diodes based on GaN microstructures

  M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai

  GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, Peer-reviewed

  
• Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes

  Kojima, K.; Funato, M.; Kawakami, Y.; Braun, H.; Schwarz, U.; Nagahama, S.; Mukai, T.

  Physica Status Solidi (C) Current Topics in Solid State Physics, 2008

  
• Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells

  Kojima, K.; Kamon, H.; Funato, M.; Kawakami, Y.

  Physica Status Solidi (C) Current Topics in Solid State Physics, 2008

  
• Monolithic polychromatic inGaN light-emitting diodes based on micro-facet structures

  M. Funato; Y. Kawakami

  Proceedings of International Meeting on Information Display, 2008, Peer-reviewed

  
• Light-emitting devices based on semipolar-oriented InGaN/GaN quantum wells

  Y. Kawakami; M. Ueda; M. Funato; Y. Narukawa; T. Mukai

  IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, Peer-reviewed

  
• Thermoelectric and electrical properties of GaN and InN single crystals

  T. Matsumoto; N. Kaiwa; S. Yamaguchi; A. Yamamoto; M. Funa; Y. Kawakami

  PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, Peer-reviewed

  
• Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range

  Ulrich T. Schwarz; Harald Braun; Kazunobu Kojima; Mitsuru Funato; Yoichi Kawakami; Shinichi Nagahama; Takashi Mukai

  NOVEL IN - PLANE SEMICONDUCTOR LASERS IV, 2007, Peer-reviewed

  
• Investigation of optical gain of InGaN quantum well lasers emitting at 400 and 470nm

  KOJIMA Kazunobu; FUNATO Mitsuru; KAWAKAMI Yoichi; SCHWARZ Ulrich T.; BRAUN Harald; NAGAHAMA Shinichi; MUKAI Takashi

  IEICE technical report, 2006

  
• Epitaxial growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN bulk crystals

  Ueda Masaya; Kojima Kazunobu; Funato Mitsuru; Kawakami Yoichi; Narukawa Yukio; Mukai Takashi

  IEICE technical report, 2006

  
• Optoelectronic properties of InGaN SQW with embedded AlGaN delta-layer

  Jongwoon Park; Akio Kaneta; Mitsuru Funato; Yoichi Kawakami

  NUSOD '06: PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2006, Peer-reviewed

  
• 近接場分光によってInGaNナノ構造の発光機構に迫る (特集 近接場光とナノデバイス)

  金田 昭男; 船戸 充; 川上 養一

  O plus E, Dec. 2005

  
• Efficient luminescence from {11.2} InGaN/GaN quantum wells

  M Funato; K Nishizuka; Y Kawakami; Y Narukawa; T Mukai

  GaN, AIN, InN and Their Alloys, 2005, Peer-reviewed

  
• Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics

  T Kotani; Y Hatada; M Funato; Y Narukawa; T Mukai; Y Kawakami; S Fujita

  Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, Peer-reviewed

  
• Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics

  T Kotani; Y Hatada; M Funato; Y Narukawa; T Mukai; Y Kawakami; S Fujita

  Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, Peer-reviewed

  
• Proposal to use GaAs(114) substrates for improvement of the optical transition probability in nitride semiconductor quantum wells

  M Funato; Y Kawaguchi; S Fujita

  GAN AND RELATED ALLOYS - 2003, 2003, Peer-reviewed

  
• Indium doping to GaN grown on GaAs{114}B substrates by metalorganic vapor phase epitaxy

  M Funato; K Shimogami; S Ujita; Y Kawaguchi; S Fujita; S Fujita

  INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, Peer-reviewed

  
• Electrical characterization of MOVPE-grown P-type GaN : Mg against annealing temperature

  S Fujita; M Funato; DC Park; Y Ikenaga; S Fujita

  MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, Peer-reviewed

  
• Optical absorption in ZnSe-GaAs heterovalent quantum structures

  M Funato; S Fujita; S Fujita

  III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, Peer-reviewed

  
• Tunable band discontinuity in Zuse/GaAs heterovalent heterostructures

  FUNATO Mitsuru; FUJITA Shizuo; FUJITA Shigeo

  應用物理, 10 Feb. 1997

  
• Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE

  M Funato; S Aoki; S Fujita; S Fujita

  CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, Peer-reviewed

  
• CUBIC ZNCDS LATTICE-MATCHED TO GAAS - A NOVEL MATERIAL FOR SHORT-WAVELENGTH OPTOELECTRONIC APPLICATIONS

  S FUJITA; M FUNATO; S HAYASHI; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jun. 1989

  

Awards

• 1998

  The foundation of ANDO laboratory, 安藤博記念学術奨励賞
• 2005

  Materials Research Society, Trophy Award
• 04 Sep. 2007

  The Japan Society of Applied Physics, 29th JSAP Outstanding Paper Award
• Jul. 2013

  CLEO PR, Best Paper Award
• 09 Apr. 2014

  The Japan Society of Applied Physics, APEX/JJAP Editorial Contribution Award
• 17 Sep. 2014

  The Japan Society of Applied Physics, 36th JSAP Outstanding Paper Award
• 2016

  The Japan Society of Applied Physics, APEX/JJAP Editorial Contribution Award

External funds: Kakenhi

• Visible, long wavelength LEDs based on In-rich InGaN on ScAlMgO4 substrates

  Grant-in-Aid for Scientific Research (A)

  Medium-sized Section 30:Applied physics and engineering and related fields

  Kyoto University

  船戸 充

  From 05 Apr. 2021, To 31 Mar. 2025, Granted

  結晶成長;InリッチInGaN;ScAlMgO4;可視長波長LED;高効率化

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21H04661/
• Light emitting synthesizer : aiming to create the ultimate lighting devices

  Grant-in-Aid for Specially Promoted Research

  Science and Engineering

  Kyoto University

  川上 養一

  From 30 Jul. 2020, To 31 Mar. 2025, Granted

  発光シンセサイザー;半導体3次元構造;次世代照明;深紫外フォトニクス;光空間無線通信;発光高効率化

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20H05622/
• ScAlMgO4基板上へのInリッチInGaN系LEDの実現

  Grant-in-Aid for Scientific Research (A)

  Medium-sized Section 30:Applied physics and engineering and related fields

  Kyoto University

  川上 養一

  From 01 Apr. 2020, To 31 Mar. 2021, Discontinued

  InリッチInGaN;ScAlMgO4基板;発光ダイオード;高効率化

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20H00351/
• Fabrication of nitride-semiconductor-based light-emitters on a reusable substrate

  Grant-in-Aid for Challenging Exploratory Research

  Kyoto University

  Funato Mitsuru

  From 01 Apr. 2016, To 31 Mar. 2018, Project Closed

  窒化物半導体;発光素子;へき開性基板;結晶工学;光デバイス;結晶成長

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16K14232/
• 近接場分光（SNOM）による特異構造の発光機構解明と制御

  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

  Science and Engineering

  Kyoto University

  川上 養一

  From 30 Jun. 2016, To 31 Mar. 2021, Discontinued

  近接場光学顕微鏡;顕微分光;窒化物半導体;特異構造;近接場分光;発光機構解明;発光制御;深紫外分光;窒化物特異構造;光物性評価;多波長発光素子;深紫外フォトニクス

  https://kaken.nii.ac.jp/grant/KAKENHI-PLANNED-16H06426/
• Elucidation and control of carrier recombination processes for the realization of AlGaN-based ultra-high efficiency ultraviolet light emitting devices

  Grant-in-Aid for Scientific Research (A)

  Kyoto University

  Mitsuru Funato

  From 01 Apr. 2016, To 31 Mar. 2021, Project Closed

  電子材料;結晶工学;紫外光源技術;電気・電子材料;電子・電気材料

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16H02332/
• Achievement of Tailor-made Lighting Sources by the Control of Nanoscopic Carrier Localization in Nitride Semiconductors

  Grant-in-Aid for Scientific Research (S)

  Kyoto University

  Yoichi Kawakami

  From 29 May 2015, To 31 Mar. 2020, Project Closed

  新機能発光デバイス;半導体3次元構造;局在光物性;多波長発光光源;窒化物半導体;プラズモニクス;3次元構造;ナノ局在;多波長発光;テーラーメイド光源;多波長発光制御;ナノ局在物性;近接場分光

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15H05732/
• 深紫外近接場分光による超ワイドギャップ半導体の物性解明

  Grant-in-Aid for Scientific Research (A)

  Kyoto University

  川上 養一

  From 01 Apr. 2015, To 31 Mar. 2016, Discontinued

  近接場光学;深紫外分光;超ワイドギャップ半導体

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15H02013/
• Development of Key Technologies for the Multi-probe Spectroscopy based on Near-field Optics

  Grant-in-Aid for Scientific Research (S)

  Kyoto University

  Yoichi KAWAKAMI

  From 11 May 2009, To 31 Mar. 2014, Project Closed

  近接場光学;マルチプローブ分光;半導体ナノ構造;発光機構解明;新規顕微分光応用;マルチプローブ技術;光物性;半導体;ナノ構造;プラズモニクス;光計測;走査プローブ顕微鏡

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21226001/
• Development of nitride-semiconductor based green laser diodes on a novel semipolar plane

  Grant-in-Aid for Scientific Research (A)

  Kyoto University

  Mitsuru FUNATO

  From 01 Apr. 2007, To 31 Mar. 2010, Project Closed

  薄膜;量子構造;窒化物半導体;緑色レーザ;半極性結晶面;発光効率;偏光;厚膜InGaN

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19206036/
• Development of key technologies for the measurement of luminescence dynamics in the nano-space

  Grant-in-Aid for Scientific Research (A)

  Kyoto University

  Yoichi KAWAKAMI

  From 01 Apr. 2006, To 31 Mar. 2009, Project Closed

  近接場分光;フォトルミネッセンス;発光ダイナミクス;先進フォトセンシング;窒化物半導体;量子ナノ構造;局在発光制御;バイオセンシング;マルチプローブ技術;バイオセンシング応用;発光機構解明;InGaNナノ構造;輻射再結合;非輻射再結合;局在励起子;時間空間ダイナミクス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18206002/
• Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-

  Grant-in-Aid for Scientific Research on Priority Areas

  Science and Engineering

  Ritsumeikan University

  Yasushi NANISHI

  From 01 Apr. 2006, To 31 Mar. 2012, Project Closed

  窒化物半導体;光デバイス;結晶成長;半導体物性;紫外;赤外;発光デバイス;窒化インジウム;窒化アルミニウム;バンドギャップ

  https://kaken.nii.ac.jp/grant/KAKENHI-ORGANIZER-18069013/
• Assessment and control of radiative/nonradiative recombination processes in In-rich InGaN and in Al-rich AlGaN

  Grant-in-Aid for Scientific Research on Priority Areas

  Science and Engineering

  Kyoto University

  Yoichi KAWAKAMI

  From 01 Apr. 2006, To 31 Mar. 2011, Project Closed

  InGaN;AlGaN;輻射再結合;非輻射再結合;発光機構解明;INGaN;A1GaN;発光マッピング;深紫外発光;偏光異方性;Modified MEE法;高品質エピ膜;半極性面;マイクロファセット;多波長発光;誘導放出

  https://kaken.nii.ac.jp/grant/KAKENHI-PLANNED-18069007/
• Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines

  Grant-in-Aid for Scientific Research (B)

  KYOTO UNIVERSITY

  Shizuo FUJITA

  From 01 Apr. 2003, To 31 Mar. 2005, Project Closed

  集束イオンビーム;ナノ加工;ナノドット;MOCVD成長;配列制御;酸化亜鉛;励起子物性;光機能;ZnO, focused ion beam;nanopatterning;nanodots;MOCVD growth;artificial arrangement;zinc oxide;exciton properties;optical functions

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360009/
• The assessment of emission mechanism in GaN-based nano-structures by scanning near-field optical microscopy

  Grant-in-Aid for Scientific Research (A)

  Kyoto University

  Yoichi KAWAKAMI

  From 01 Apr. 2003, To 31 Mar. 2006, Project Closed

  近接場分光;フォトルミネッセンス;発光ダイナミクス;マルチプローブ技術;先進フォトセンシング;窒化物半導体;量子ナノ構造;超高効率発光;超高発光効率, Near Field Spectroscopy;Photoluminescence;Emission Dynamics;Multi-probe Technique;Advanced Photo-sensing;GaN-based semiconductors;Quantum nano-structures;Highly Efficient Emission

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15206033/
• Study on nonradiative recombination mechanism in widegap semiconductors

  Grant-in-Aid for Scientific Research (B)

  KYOTO UNIVERSITY

  Yoichi KAWAKAMI

  From 01 Apr. 2000, To 31 Mar. 2003, Project Closed

  ワイドギャップ半導体;励起子;輻射再結合;非輻射再結合;近接場工学;過渡グレーティング法;熱レンズ法;時間・空間ダイナミクス;ワイドキャップ半導体;時間ダイナミクス;空間ダイナミクス;熱レイズ法, widegap semiconductor;exciton;radiative recombination;nonradiative recombination;transient grating spectroscopy;thermal lens spectroscopy;temporal dynamics;spatial dynamics

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12450011/
• 半導体/強磁性体薄膜多層構造による励起子磁気光学効果の創出

  Grant-in-Aid for Exploratory Research

  Kyoto University

  藤田 静雄

  From 01 Apr. 1999, To 31 Mar. 2000, Project Closed

  励起子;励起子磁気光学効果;強磁性体薄膜;ZnO;多層構造;配向特性

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11875005/
• 表面エネルギー変調エピタキシーによる半導体不整合系へテロ構造の作製

  Grant-in-Aid for Scientific Research (C)

  Kyoto University

  船戸 充

  From 01 Apr. 1999, To 31 Mar. 2001, Project Closed

  表面エネルギー;半導体へテロ構造;不整合;GaN;GaAs;結晶構造

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650014/
• Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules

  Grant-in-Aid for Scientific Research (A).

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1998, To 31 Mar. 2001, Project Closed

  ワイドギャップ半導体;励起子;励起子分子;低次元構造;局在;時間分解分光;発光ダイナミクス;ZnCdSe;InGaN;量子ドット;多体効果;局在化, Widegap Semiconductors;Exciton;Exciton Molecule;Low-dimensional Structures;Localization;Time-resolved spectroscopy;Luminescence Dynamics

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305025/
• 原子価不整合系半導体ヘテロ界面の原子層レベル制御とバンド不連続量

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  船戸 充

  From 01 Apr. 1997, To 31 Mar. 1999, Project Closed

  原子価不整合;半導体ヘテロ界面;Zn(S)Se;GaAs;バンド不連続量;硫黄原子;ZnSe

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09750034/
• Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions

  Grant-in-Aid for Scientific Research (A)

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1995, To 31 Mar. 1998, Project Closed

  光触媒反応;反応過程;ZnCdSSe;不純物添加;p型伝導性制御;量子構造;電流注入レーザ発振;反応素過程;欠陥制御;励起子発光寿命, photocatalysis;growth processes;ZnCdSSe;impurity doping;p-type control;quantum structure;current-injection lasing

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07405017/
• 異族半導体多層構造の作製と界面物性に関する研究

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  船戸 充

  From 01 Apr. 1994, To 31 Mar. 1995, Project Closed

  異族半導体多層構造;GaAs-ZnSe;成長姿態;透過型電子顕微鏡;ヘテロ接合ダイオード

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06855003/
• 異族半導体AlGaAs-ZnSe新人工多層構造の作製と新物性に関する研究

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  船戸 充

  From 01 Apr. 1993, To 31 Mar. 1994, Project Closed

  異族半導体多層構造;GaAs-ZnSe;透過型電子顕微鏡;三次元成長;マイグレーション

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05855005/
• Epitaxial Growth of Novel II-VI Semiconductor Alloys for Ultraviolet Optical Devices

  Grant-in-Aid for General Scientific Research (B)

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1993, To 31 Mar. 1995, Project Closed

  紫外光デバイス;分子線エピタキシ-;ZnCdSSe;GaP;MIS;量子井戸構造;紫外発光ダイオード;紫外半導体レーザ;Gap;P型伝導度制御;量子井戸;原子層制御成長, Ultraviolet Optical Devices;Moleclar Beam Epitaxy;ZnCdSSe;GaP;MIS;Quantum Well

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05452097/

External funds: others

• Study on II-VI/III-V hetero-valent multilayered structures

  From 1990, To 2000
• MOVPE of cubic GaN

  From 1997
• MOVPE of Hexagonal GaN

  From 1999

Education

Teaching subject(s)

• From 01 Apr. 2024, To 31 Mar. 2025

  Fundamentals of Optical Engineering 1

  6044, Fall, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Practice of Electrical and Electronic Engineering

  6201, Spring, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Fundamentals of Optical Engineering 2

  6057, Spring, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Optical Properties and Engineering

  C822, Spring, Graduate School of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Fundamentals of Optical Engineering 2

  6057, Spring, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Fundamentals of Optical Engineering 1

  6044, Fall, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Practice of Electrical and Electronic Engineering

  6201, Spring, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Optical Properties and Engineering

  C822, Spring, Graduate School of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Optical Properties and Engineering

  C822, Spring, Graduate School of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Fundamentals of Optical Engineering 2

  6057, Spring, Faculty of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Fundamentals of Optical Engineering 1

  6044, Fall, Faculty of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Practice of Electrical and Electronic Engineering

  6201, Spring, Faculty of Engineering, 2
• From Apr. 2011, To Mar. 2012

  光工学２

  Spring, 工学部
• From Apr. 2011, To Mar. 2012

  光工学１

  Fall, 工学部
• From Apr. 2011, To Mar. 2012

  光物性工学

  Spring, 工学研究科
• From Apr. 2012, To Mar. 2013

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2012, To Mar. 2013

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2012, To Mar. 2013

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2013, To Mar. 2014

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2013, To Mar. 2014

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2013, To Mar. 2014

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2014, To Mar. 2015

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2014, To Mar. 2015

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2014, To Mar. 2015

  Electrical and Electronic Engineering Practice A

  Spring, 工学部
• From Apr. 2014, To Mar. 2015

  Electrical and Electronic Engineering Practice B

  Fall, 工学部
• From Apr. 2014, To Mar. 2015

  Electrical and Electronic Engineering Advanced Practice A

  Spring, 工学部
• From Apr. 2014, To Mar. 2015

  Electrical and Electronic Engineering Advanced Practice B

  Fall, 工学部
• From Apr. 2014, To Mar. 2015

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2015, To Mar. 2016

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2015, To Mar. 2016

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2015, To Mar. 2016

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2016, To Mar. 2017

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2016, To Mar. 2017

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2016, To Mar. 2017

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2017, To Mar. 2018

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2017, To Mar. 2018

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Practice of Electrical and Electronic Engineering

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2018, To Mar. 2019

  Practice of Electrical and Electronic Engineering

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2019, To Mar. 2020

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2019, To Mar. 2020

  Practice of Electrical and Electronic Engineering

  Spring, 工学部
• From Apr. 2020, To Mar. 2021

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2020, To Mar. 2021

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2020, To Mar. 2021

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2020, To Mar. 2021

  Practice of Electrical and Electronic Engineering

  Spring, 工学部
• From Apr. 2021, To Mar. 2022

  Fundamentals of Optical Engineering 1

  Fall, 工学部
• From Apr. 2021, To Mar. 2022

  Fundamentals of Optical Engineering 2

  Spring, 工学部
• From Apr. 2021, To Mar. 2022

  Optical Properties and Engineering

  Spring, 工学研究科
• From Apr. 2021, To Mar. 2022

  Practice of Electrical and Electronic Engineering

  Spring, 工学部

Participation in PhD Defense

• Low-Field and High-Field Anisotropic Carrier Transport in SiC

  ISHIKAWA RYOYA, Graduate School of Engineering, Sub-chief Examiner

  24 Mar. 2025
• High-Field Transport at Heavily-Doped SiC Schottky Contacts and Formation of Non-Alloyed Ohmic Contacts

  HARA MASAHIRO, Graduate School of Engineering, Sub-chief Examiner

  25 Mar. 2024

Administration

Faculty management (title, position)

• From 01 Apr. 2014, To 31 Mar. 2016

  工学研究科附属桂インテックセンター運営委員会　委員
• From 01 Apr. 2007, To 31 Mar. 2023

  工学研究科・工学部化学物質管理委員会　委員