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Kimoto, Tsunenobu

Graduate School of Engineering, Division of Electronic Science and Engineering Professor

Kimoto, Tsunenobu
list
    Last Updated :2024/12/04

    Basic Information

    Faculty

    • Faculty of Engineering

    Professional Memberships

    • From 2021, To Present
      ワイドギャップ半導体学会
    • Materials Research Society
    • IEEE
    • 電気学会
    • 電子情報通信学会
    • 日本結晶成長学会
    • 応用物理学会

    Academic Degree

    • 工学修士(京都大学)
    • 博士(工学)(京都大学)

    Academic Resume (Graduate Schools)

    • 京都大学, 大学院工学研究科修士課程電気工学第二専攻, 修了

    Academic Resume (Undergraduate School/Majors)

    • 京都大学, 工学部電気工学第二学科, 卒業

    High School

    • High School

      桐蔭高等学校

    Research History

    • From 1988, To 1990
      アモルファスSiおよびダイヤモンド半導体の研究
    • From 1988, To 1990
      Research and Devclopmant of Amophon Si and Semiconducter Diamond
    • From 1990
      - SiCの結晶成長とデバイス応用
    • From 1990
      - Cuystal Grouth of SiC and Deuice Applocations

    Language of Instruction

    • English

    ID,URL

    researchmap URL

    list
      Last Updated :2024/12/04

      Research

      Research Topics, Overview of the research

      • Research Topics

        Semiconductor Materials and Devices
      • Overview of the research

        - Fundamental Study on High-Voltage SiC Power Devices
        - Clarification of Physical Properties and Defect Electronics in SiC
        - Fundamental study on SiC-Based Integrated Circuits
        - Electronic States and Electron Transport in Semiconductor Nanowires
        - Fundamental study on Oxide Films for Resistance-Switching Memories

      Research Interests

      • Semiconductor Devices
      • 半導体材料
      • Semiconductor Material

      Research Areas

      • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment
      • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

      Papers

      • Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC
        Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Nov. 2024
      • Impact ionization coefficients along 4H-SiC 11 2 ¯ 0 in a wide temperature range
        Takeaki Kitawaki; Xilun Chi; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Nov. 2024
      • Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects
        Shion Toshimitsu; Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 02 Sep. 2024
      • Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes
        Ryoya Ishikawa; Mitsuaki Kaneko; Tsunenobu Kimoto
        Solid State Phenomena, 23 Aug. 2024
      • Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC
        Shota Kozakai; Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto
        Journal of Applied Physics, 06 Sep. 2024
      • Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3
        Koji Ito; Hajime Tanaka; Masahiro Horita; Jun Suda; Tsunenobu Kimoto
        Applied Physics Express, 01 Aug. 2024
      • Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors with Reduced Base Spreading Resistance
        Satoshi Asada; Jun Suda; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, 01 Nov. 2019
      • Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination
        Takuya Maeda; Tetsuo Narita; Hiroyuki Ueda; Masakazu Kanechika; Tsutomu Uesugi; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda
        Applied Physics Letters, 30 Sep. 2019
      • Impact ionization coefficients of 4H-SiC in a wide temperature range
        Y. Zhao; H. Niwa; T. Kimoto
        Japanese Journal of Applied Physics, 01 Jan. 2019
      • Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices
        Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Jan. 2019
      • Determination of surface recombination velocity from current-voltage characteristics in SiC p-n diodes
        Satoshi Asada; Jun Suda; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, 01 Nov. 2018
      • Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations
        Satoshi Asada; Jun Suda; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Aug. 2018
      • Effects of parasitic region in SiC bipolar junction transistors on forced current gain
        Satoshi Asada; Jun Suda; Tsunenobu Kimoto
        Materials Science Forum, 2018
      • Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer
        Seigo Mori; Masatoshi Aketa; Takui Sakaguchi; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto
        IEEE Journal of the Electron Devices Society, 2018
      • Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer
        Takeshi Tawara; Tetsuya Miyazawa; Mina Ryo; Masaki Miyazato; Takumi Fujimoto; Kensuke Takenaka; Shinichiro Matsunaga; Masaaki Miyajima; Akihiro Otsuki; Yoshiyuki Yonezawa; Tomohisa Kato; Hajime Okumura; Tsunenobu Kimoto; Hidekazu Tsuchida
        Materials Science Forum, 2017
      • High-temperature operation of electrostatically-excited single-crystalline 4H-SiC microcantilever resonators
        Kosuke Sato; Kohei Adachi; Hajime Okamoto; Hiroshi Yamaguchi; Tsunenobu Kimoto; Jun Suda
        Materials Science Forum, 2015
      • Temperature dependence of impact ionization coefficients in 4H-SiC
        Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        Materials Science Forum, 2014
      • High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces
        Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto
        IEEE Electron Device Letters, Jul. 2024
      • Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC
        Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 03 Jun. 2024
      • Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process
        Kotaro Kuwahara; Takeaki Kitawaki; Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 May 2024
      • High electron mobility in heavily sulfur-doped 4H-SiC
        Mitsuaki Kaneko; Taiga Matsuoka; Tsunenobu Kimoto
        Journal of Applied Physics, 23 May 2024
      • Generation of deep levels near the 4H-SiC surface by thermal oxidation
        Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Apr. 2024
      • Origin of hole mobility anisotropy in 4H-SiC
        Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Journal of Applied Physics, 16 Feb. 2024
      • Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC
        Hajime Tanaka; Tsunenobu Kimoto; Nobuya Mori
        Materials Science in Semiconductor Processing, Apr. 2024
      • Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs
        Kyota Mikami; Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Jan. 2024
      • Tunneling current through non-alloyed metal/heavily-doped SiC interfaces
        Masahiro Hara; Takeaki Kitawaki; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Materials Science in Semiconductor Processing, Mar. 2024
      • 350°C Operation of SiC Complementary JFET Logic Gates
        Mitsuaki Kaneko; Masashi Nakajima; Qimin Jin; Noriyuki Maeda; Tsunenobu Kimoto
        2023 IEEE CPMT Symposium Japan (ICSJ), 15 Nov. 2023
      • Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs
        Xilun Chi; Keita Tachiki; Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Nov. 2023
      • Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
        Mitsuaki Kaneko; Hideaki Takashima; Konosuke Shimazaki; Shigeki Takeuchi; Tsunenobu Kimoto
        APL Materials, 01 Sep. 2023
      • Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC
        Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        physica status solidi (b), 17 Aug. 2023
      • Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
        Kazutaka Kanegae; Tetsuo Narita; Kazuyoshi Tomita; Tetsu Kachi; Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, Sep. 2021
      • Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN
        Kazutaka Kanegae; Tetsuo Narita; Kazuyoshi Tomita; Tetsu Kachi; Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        Japanese Journal of Applied Physics, Apr. 2020
      • Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
        Kazutaka Kanegae; Hajime Fujikura; Yohei Otoki; Taichiro Konno; Takehiro Yoshida; Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        Applied Physics Letters, 01 Jul. 2019
      • Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate
        M. Kaneko; A. Tsibizov; T. Kimoto; U. Grossner
        IEEE Transactions on Electron Devices, Apr. 2023
      • Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces
        Takeaki Kitawaki; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Mar. 2023
      • Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC
        Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Feb. 2023
      • Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation
        Taiga Matsuoka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Jan. 2023
      • Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations
        Takuya Maeda; Tetsuo Narita; Shinji Yamada; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda
        IEEE Electron Device Letters, Jan. 2022, Peer-reviewed
      • Impact ionization coefficients and critical electric field in GaN
        Takuya Maeda; Tetsuo Narita; Shinji Yamada; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda
        Journal of Applied Physics, 14 May 2021, Peer-reviewed
      • Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
        Takuya Maeda; Tetsuo Narita; Hiroyuki Ueda; Masakazu Kanechika; Tsutomu Uesugi; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda
        IEEE Electron Device Letters, Jun. 2019, Peer-reviewed
      • Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n+ junction diodes
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        Japanese Journal of Applied Physics, 2019, Peer-reviewed
      • Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy
        Kazutaka Kanegae; Takafumi Okuda; Masahiro Horita; Jun Suda; Tsunenobu Kimoto
        Journal of Applied Physics, 14 Sep. 2021
      • A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors
        Takafumi Okuda; Tsunenobu Kimoto; Jun Suda
        Japanese Journal of Applied Physics, Apr. 2018
      • Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
        Takuji Hosoi; Momoe Ohsako; Kidist Moges; Koji Ito; Tsunenobu Kimoto; Mitsuru Sometani; Mitsuo Okamoto; Akitaka Yoshigoe; Takayoshi Shimura; Heiji Watanabe
        Applied Physics Express, May 2022, Peer-reviewed
      • Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET
        Takuji Hosoi; Shuji Azumo; Yusaku Kashiwagi; Shigetoshi Hosaka; Kenji Yamamoto; Masatoshi Aketa; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe
        Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2017, Peer-reviewed
      • Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices
        Yoshihito Katsu; Takuji Hosoi; Yuichiro Nanen; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe
        Materials Science Forum, 2016, Peer-reviewed
      • Characterization of inhomogeneity in SiO2 films on 4H-SiC epitaxial substrate by a combination of Fourier transform infrared spectroscopy and cathodoluminescence spectroscopy
        Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Takuma Kobayashi; Tsunenobu Kimoto
        Materials Science Forum, 30 Jun. 2015, Peer-reviewed
      • Device performance and switching characteristics of 16 kV ultrahigh-voltage SiC flip-type n-channel IE-IGBTs
        Y. Yonezawa; T. Mizushima; K. Takenaka; H. Fujisawa; T. Deguchi; T. Kato; S. Harada; Y. Tanaka; D. Okamoto; M. Sometani; M. Okamoto; M. Yoshikawa; T. Tsutsumi; Y. Sakai; N. Kumagai; S. Matsunaga; M. Takei; M. Arai; T. Hatakeyama; K. Takao; T. Shinohe; T. Izumi; T. Hayashi; K. Nakayama; K. Asano; M. Miyajima; H. Kimura; A. Otsuki; K. Fukuda; H. Okumura; T. Kimoto
        Materials Science Forum, 2015, Peer-reviewed
      • Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes
        H. Tanaka; T. Kimoto; N. Mori
        Journal of Applied Physics, 14 Jun. 2022
      • Surface Step Structures of SiC Epitaxial Layers Grown on Off-axis SiC(0001)
        KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Materia Japan, 20 Dec. 2001
      • SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K
        M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto
        IEEE Electron Device Letters, Jul. 2022
      • Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
        Keita Tachiki; Kyota Mikami; Koji Ito; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Jul. 2022
      • Performance Improvement and Reliability Physics in SiC MOSFETs
        T. Kimoto; K. Tachiki; A. Iijima; M. Kaneko
        2022 IEEE International Reliability Physics Symposium (IRPS), Mar. 2022
      • Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes
        Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Letters, 25 Apr. 2022
      • Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates
        Katsuya Takahashi; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Apr. 2022
      • Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p/n+ Junction
        Takuya Maeda; Tetsuo Narita; Shinji Yamada; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda
        2019 IEEE International Electron Devices Meeting (IEDM), Dec. 2019
      • Physics and Innovative Technologies in SiC Power Devices
        T. Kimoto; M. Kaneko; K. Tachiki; K. Ito; R. Ishikawa; X. Chi; D. Stefanakis; T. Kobayashi; H. Tanaka
        2021 IEEE International Electron Devices Meeting (IEDM), 11 Dec. 2021
      • Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature
        Ryoya Ishikawa; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Jun. 2021
      • Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC
        Euihyeon Do; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Jun. 2021, Peer-reviewed
      • Lateral spreads of ion-implanted Al and P atoms in silicon carbide
        Qimin Jin; Masashi Nakajima; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 May 2021, Peer-reviewed
      • Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures
        Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 May 2021
      • Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current
        Keita Tachiki; Takahisa Ono; Takuma Kobayashi; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Mar. 2021, Peer-reviewed
      • Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
        Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Mar. 2021, Peer-reviewed
      • Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing
        Keita Tachiki; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Feb. 2021, Peer-reviewed
      • Defect engineering in SiC technology for high-voltage power devices
        Tsunenobu Kimoto; Heiji Watanabe
        Applied Physics Express, 01 Dec. 2020
      • Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
        Keita Tachiki; Mitsuaki Kaneko; Takuma Kobayashi; Tsunenobu Kimoto
        Applied Physics Express, 01 Dec. 2020, Peer-reviewed
      • Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs
        M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto
        IEEE Transactions on Electron Devices, Oct. 2020, Peer-reviewed
      • Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems
        Koji Ito; Takuma Kobayashi; Tsunenobu Kimoto
        Journal of Applied Physics, 07 Sep. 2020, Peer-reviewed
      • Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering
        Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto
        Thin Solid Films, Sep. 2020, Peer-reviewed
      • Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations
        Daisuke Nakamura; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Sep. 2020, Peer-reviewed
      • Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
        Takuma Kobayashi; Takafumi Okuda; Keita Tachiki; Koji Ito; Yu-ichiro Matsushita; Tsunenobu Kimoto
        Applied Physics Express, 01 Sep. 2020, Peer-reviewed
      • Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC
        Dionysios Stefanakis; Xilun Chi; Takuya Maeda; Mitsuaki Kaneko; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Sep. 2020, Peer-reviewed
      • Tunneling Current in 4H-SiC p-n Junction Diodes
        M. Kaneko; X. Chi; T. Kimoto
        IEEE Transactions on Electron Devices, Aug. 2020, Peer-reviewed
      • Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications
        Hironobu AKITA; Tsunenobu KIMOTO
        IEICE Transactions on Electronics, 01 Jun. 2020, Peer-reviewed
      • Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces
        T. Umeda; Y. Nakano; E. Higa; T. Okuda; T. Kimoto; T. Hosoi; H. Watanabe; M. Sometani; S. Harada
        Journal of Applied Physics, 14 Apr. 2020, Peer-reviewed
      • Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces
        Masahiro Hara; Satoshi Asada; Takuya Maeda; Tsunenobu Kimoto
        Applied Physics Express, 01 Apr. 2020, Peer-reviewed
      • Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors
        Satoshi Asada; Jun Suda; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Apr. 2020, Peer-reviewed
      • Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors
        Hajime Tanaka; Tsunenobu Kimoto; Nobuya Mori
        APPLIED PHYSICS EXPRESS, Apr. 2020, Peer-reviewed
      • Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes
        A. Iijima; T. Kimoto
        Applied Physics Letters, 02 Mar. 2020, Peer-reviewed
      • Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET
        Takuji Hosoi; Shuji Azumo; Yusaku Kashiwagi; Shigetoshi Hosaka; Kenji Yamamoto; Masatoshi Aketa; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe
        Japanese Journal of Applied Physics, 01 Feb. 2020, Peer-reviewed
      • Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE
        Mitsuaki Kaneko; Kazuto Hirai; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, 01 Feb. 2020, Peer-reviewed
      • Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells
        Naoki Kanegami; Yusuke Nishi; Tsunenobu Kimoto
        Applied Physics Letters, 06 Jan. 2020, Peer-reviewed
      • Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device
        Ei Shigematsu; Ryo Ohshima; Yuichiro Ando; Teruya Shinjo; Tsunenobu Kimoto; Masashi Shiraishi
        Solid State Communications, 2020, Peer-reviewed
      • CO2アニールによるSiO2/SiC界面窒素量制御とSiC MOSFET信頼性向上
        細井卓治; 大迫桃恵; 伊藤滉二; 志村考功; 木本恒暢; 渡部平司
        Dec. 2019, Peer-reviewed
      • Dominant conduction mechanism in TaO x -based resistive switching devices
        Toshiki Miyatani; Yusuke Nishi; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 01 Sep. 2019, Peer-reviewed
      • Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction
        Takuya Maeda; Xilun Chi; Hajime Tanaka; Masahiro Horita; Jun Suda; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, Aug. 2019, Peer-reviewed
      • Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
        M. Nakajima; M. Kaneko; T. Kimoto
        IEEE Electron Device Letters, Jun. 2019, Peer-reviewed
      • Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
        Takuma Kobayashi; Keita Tachiki; Koji Ito; Tsunenobu Kimoto
        Applied Physics Express, Mar. 2019
      • Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation
        Takuma Kobayashi; Yu Ichiro Matsushita; Tsunenobu Kimoto; Atsushi Oshiyama
        Japanese Journal of Applied Physics, Jan. 2019
      • Influence of vacuum annealing on interface properties of SiC (0001) MOS structures
        Koji Ito; Takuma Kobayashi; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 2019
      • Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells
        Toshiki Miyatani; Yusuke Nishi; Tsunenobu Kimoto
        MRS Advances, 2019, Peer-reviewed
      • SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation
        Mitsuaki Kaneko; Ulrike Grossner; Tsunenobu Kimoto
        Materials Science Forum, Jan. 2019, Peer-reviewed
      • Microscopic mechanism of carbon annihilation upon SiC oxidation due to phosphorus treatment: Density functional calculations combined with ion mass spectrometry
        Takuma Kobayashi; Yu Ichiro Matsushita; Takafumi Okuda; Tsunenobu Kimoto; Atsushi Oshiyama
        Applied Physics Express, Dec. 2018
      • Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells
        Masaya Arahata; Yusuke Nishi; Tsunenobu Kimoto
        AIP Advances, Dec. 2018, Peer-reviewed
      • Conductance fluctuation in NiO-based resistive switching memory
        Yusuke Nishi; Hiroki Sasakura; Tsunenobu Kimoto
        Journal of Applied Physics, 21 Oct. 2018, Peer-reviewed
      • Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
        Masashi Kato; Shinya Katahira; Yoshihito Ichikawa; Shunta Harada; Tsunenobu Kimoto
        Journal of Applied Physics, 04 Sep. 2018, Peer-reviewed
      • Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage
        Maeda Takuya; Chi Xilun; Horita Masahiro; Suda Jun; Kimoto Tsunenobu
        APPLIED PHYSICS EXPRESS, Sep. 2018
      • Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions
        Y. Ichikawa; M. Ichimura; T. Kimoto; M. Kato
        ECS J. Solid St. Sci. Technol., Aug. 2018, Peer-reviewed
      • Estimation of Threshold Voltage in SiC Short-Channel MOSFETs
        Keita Tachiki; Takahisa Ono; Takuma Kobayashi; Hajime Tanaka; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Jul. 2018, Peer-reviewed
      • Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies
        Kanegae Kazutaka; Kaneko Mitsuaki; Kimoto Tsunenobu; Horita Masahiro; Suda Jun
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2018
      • Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy
        Kanegae Kazutaka; Horita Masahiro; Kimoto Tsunenobu; Suda Jun
        APPLIED PHYSICS EXPRESS, Jul. 2018
      • Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
        Maeda Takuya; Narita Tetsuo; Kanechika Masakazu; Uesugi Tsutomu; Kachi Tetsu; Kimoto Tsunenobu; Horita Masahiro; Suda Jun
        APPLIED PHYSICS LETTERS, 18 Jun. 2018
      • High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate
        Kaneko M; Kimoto T
        IEEE ELECTRON DEVICE LETTERS, May 2018, Peer-reviewed
      • Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
        Sawada Naoki; Narita Tetsuo; Kanechika Masakazu; Uesugi Tsutomu; Kachi Tetsu; Horita Masahiro; Kimoto Tsunenobu; Suda Jun
        APPLIED PHYSICS EXPRESS, Apr. 2018
      • Progress and future challenges of SiC power devices and process technology
        T. Kimoto; H. Niwa; N. Kaji; T. Kobayashi; Y. Zhao; S. Mori; M. Aketa
        Technical Digest - International Electron Devices Meeting, IEDM, 23 Jan. 2018
      • Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure
        Tanaka H; Asada S; Kimoto T; Suda J
        Journal of Applied Physics, 2018, Peer-reviewed
      • Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires
        Tanaka H; Suda J; Kimoto T
        Journal of Applied Physics, 2018, Peer-reviewed
      • Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0)
        Kaneko M; Ueta S; Horita M; Kimoto T; Suda J
        APPLIED PHYSICS LETTERS, 01 Jan. 2018, Peer-reviewed
      • Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation
        T. Okuda; T. Miyazawa; H. Tsuchida; T. Kimoto; J. Suda
        JOURNAL OF ELECTRONIC MATERIALS, Nov. 2017, Peer-reviewed
      • TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors
        Daisuke Nakamura; Taishi Kimura; Tetsuo Narita; Akitoshi Suzumura; Tsunenobu Kimoto; Kenji Nakashima
        JOURNAL OF CRYSTAL GROWTH, Nov. 2017, Peer-reviewed
      • High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch
        Seigo Mori; Masatoshi Aketa; Takui Sakaguchi; Yuichiro Nanen; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Oct. 2017, Peer-reviewed
      • Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC
        Satoshi Asada; Tsunenobu Kimoto; Ivan G. Ivanov
        APPLIED PHYSICS LETTERS, Aug. 2017, Peer-reviewed
      • Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar
        Takuma Kobayashi; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Aug. 2017, Peer-reviewed
      • Effect of Postoxidation Nitridation on Forward Current-Voltage Characteristics in 4H-SiC Mesa p-n Diodes Passivated With SiO2
        Satoshi Asada; Tsunenobu Kimoto; Jun Suda
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Jul. 2017, Peer-reviewed
      • Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates
        Hiroaki Fujihara; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2017, Peer-reviewed
      • Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy
        Hirofumi Seki; Masanobu Yoshikawa; Takuma Kobayashi; Tsunenobu Kimoto; Yukihiro Ozaki
        Applied Spectroscopy, 01 May 2017
      • Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode
        Takuya Maeda; Masaya Okada; Masaki Ueno; Yoshiyuki Yamamoto; Tsunenobu Kimoto; Masahiro Horita; Jun Suda
        APPLIED PHYSICS EXPRESS, May 2017, Peer-reviewed
      • Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies
        Takuma Kobayashi; Seiya Nakazawa; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Apr. 2017, Peer-reviewed
      • Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
        Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto
        AIP ADVANCES, Apr. 2017, Peer-reviewed
      • Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation
        Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Mar. 2017, Peer-reviewed
      • Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers
        Akifumi Iijima; Isaho Kamata; Hidekazu Tsuchida; Jun Suda; Tsunenobu Kimoto
        PHILOSOPHICAL MAGAZINE, 2017, Peer-reviewed
      • Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation
        Tanaka H; Suda J; Kimoto T
        IEEE Transactions on Nanotechnology, 2017, Peer-reviewed
      • Phonon frequencies of a highly strained AIN layer coherently grown on 6H-SiC (0001)
        Kaneko M; Kimoto T; Suda J
        AIP ADVANCES, Jan. 2017, Peer-reviewed
      • Control of carbon vacancy in SiC toward ultrahigh-voltage power devices
        T. Kimoto; K. Kawahara; B. Zippelius; E. Saito; J. Suda
        SUPERLATTICES AND MICROSTRUCTURES, Nov. 2016, Peer-reviewed
      • Promise and Challenges of High-Voltage SiC Bipolar Power Devices
        Tsunenobu Kimoto; Kyosuke Yamada; Hiroki Niwa; Jun Suda
        ENERGIES, Nov. 2016, Peer-reviewed
      • Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories
        Yusuke Nishi; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Sep. 2016, Peer-reviewed
      • Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model
        Hajime Tanaka; Jun Suda; Tsunenobu Kimoto
        Solid-State Electronics, Sep. 2016, Peer-reviewed
      • Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method
        Masanobu Yoshikawa; Kenichi Kosaka; Hirohumi Seki; Tsunenobu Kimoto
        APPLIED SPECTROSCOPY, Jul. 2016, Peer-reviewed
      • Bulk and epitaxial growth of silicon carbide
        Tsunenobu Kimoto
        PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, Jun. 2016, Peer-reviewed
      • Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing
        Eiji Saito; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Jun. 2016, Peer-reviewed
      • Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing
        Takafumi Okuda; Takuma Kobayashi; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, May 2016, Peer-reviewed
      • Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE
        Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, May 2016, Peer-reviewed
      • Interface state density of SiO2/p-type 4H-SiC (0001), (11(2)over-bar0), (1(1)over-bar00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes
        Takuma Kobayashi; Seiya Nakazawa; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Apr. 2016, Peer-reviewed
      • Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires
        Hajime Tanaka; Jun Suda; Tsunenobu Kimoto
        Physical Review B, Apr. 2016, Peer-reviewed
      • Hall scattering factors in p-type 4H-SiC with various doping concentrations
        Asada Satoshi; Okuda Takafumi; Kimoto Tsunenobu; Suda Jun
        Appl. Phys. Express, 03 Mar. 2016
      • Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
        Atsushi Tanaka; Hirofumi Matsuhata; Naoyuki Kawabata; Daisuke Mori; Kei Inoue; Mina Ryo; Takumi Fujimoto; Takeshi Tawara; Masaki Miyazato; Masaaki Miyajima; Kenji Fukuda; Akihiro Ohtsuki; Tomohisa Kato; Hidekazu Tsuchida; Yoshiyuki Yonezawa; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Mar. 2016, Peer-reviewed
      • Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy
        Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Feb. 2016, Peer-reviewed
      • Ion Implantation Technology in SiC for High-Voltage/High-Temperature Devices
        T. Kimoto; K. Kawahara; N. Kaji; H. Fujihara; J. Suda
        2016 16th International Workshop on Junction Technology (IWJT), 2016, Peer-reviewed
      • Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires
        Hajime Tanaka; Jun Suda; Tsunenobu Kimoto
        2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, Peer-reviewed
      • Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET
        Seigo Mori; Masatoshi Aketa; Takui Sakaguchi; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto
        2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, Peer-reviewed
      • Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing
        Takafumi Okuda; Takuma Kobayashi; Tsunenobu Kimoto; Jun Suda
        2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, Peer-reviewed
      • Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process
        Hiroki Sasakura; Yusuke Nishi; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Dec. 2015, Peer-reviewed
      • Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy
        Tetsuo Hatakeyama; Mitsuru Sometani; Kenji Fukuda; Hajime Okumura; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2015, Peer-reviewed
      • Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC
        Takafumi Okuda; Giovanni Alfieri; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Nov. 2015, Peer-reviewed
      • Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices
        Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Oct. 2015, Peer-reviewed
      • Characterization of traps in SiC/SiO
        Hatakeyama Tetsuo; Sometani Mitsuru; Fukuda Kenji; Okumura Hajime; Kimoto Tsunenobu
        Jpn. J. Appl. Phys., 30 Sep. 2015
      • Characterization of Thermal Oxides on 4H Silicon Carbide (4H-SiC) Epitaxial Substrate Using Fourier Transform Infrared Spectroscopy.
        Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Takuma Kobayashi; Tsunenobu Kimoto
        Applied spectroscopy, 01 Sep. 2015
      • Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime
        Naoki Kaji; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2015, Peer-reviewed
      • Dominant conduction mechanism in NiO-based resistive memories
        Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jun. 2015, Peer-reviewed
      • Temperature dependence of current gain in 4H-SiC bipolar junction transistors
        Satoshi Asada; Takafumi Okuda; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2015, Peer-reviewed
      • Material science and device physics in SiC technology for high-voltage power devices
        Kimoto Tsunenobu
        Jpn. J. Appl. Phys., 23 Mar. 2015
      • Development of Ultrahigh-Voltage SiC Devices
        Kenji Fukuda; Dai Okamoto; Mitsuo Okamoto; Tadayoshi Deguchi; Tomonori Mizushima; Kensuke Takenaka; Hiroyuki Fujisawa; Shinsuke Harada; Yasunori Tanaka; Yoshiyuki Yonezawa; Tomohisa Kato; Shuji Katakami; Manabu Arai; Manabu Takei; Shinichiro Matsunaga; Kazuto Takao; Takashi Shinohe; Toru Izumi; Toshihiko Hayashi; Syuuji Ogata; Katsunori Asano; Hajime Okumura; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Feb. 2015, Peer-reviewed
      • Interface Properties of 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOS Structures Annealed in NO
        Seiya Nakazawa; Takafumi Okuda; Jun Suda; Takashi Nakamura; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Feb. 2015, Peer-reviewed
      • Influence of conduction-type on thermal oxidation rate in SiC(0001) with various doping densities
        Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto
        Materials Science Forum, 2015
      • Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs
        Hiroaki Fujihara; Naoya Morioka; Hajime Tanaka; Jun Suda; Tsunenobu Kimoto
        2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015, Peer-reviewed
      • Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires
        Hajime Tanaka; Jun Suda; Tsunenobu Kimoto
        2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015, Peer-reviewed
      • Impact of conduction type and doping density on thermal oxidation rate of SiC(0001)
        Kobayashi Takuma; Suda Jun; Kimoto Tsunenobu
        Appl. Phys. Express, 13 Nov. 2014
      • Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers
        Toshihiko Hayashi; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2014, Peer-reviewed
      • Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy
        Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Yuichiro Nanen; Tsunenobu Kimoto
        APPLIED SPECTROSCOPY, Oct. 2014, Peer-reviewed
      • Temperature dependence of optical absorption coefficient of 4H- and 6H-SiC from room temperature to 300 °C
        Watanabe Naoki; Kimoto Tsunenobu; Suda Jun
        Jpn. J. Appl. Phys., 22 Sep. 2014
      • Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing
        Takafumi Okuda; Tetsuya Miyazawa; Hidekazu Tsuchida; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Aug. 2014, Peer-reviewed
      • Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps
        Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS LETTERS, Aug. 2014, Peer-reviewed
      • Conduction-type dependence of thermal oxidation rate on SiC(0001)
        Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto
        IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai, 28 Jul. 2014
      • Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires
        Hajime Tanaka; Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Jun. 2014, Peer-reviewed
      • 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0)
        Masahiro Horita; Masato Noborio; Tsunenobu Kimoto; Jun Suda
        IEEE ELECTRON DEVICE LETTERS, Mar. 2014, Peer-reviewed
      • <大学の研究・動向>新しい材料・構造・概念がもたらす半導体デバイスの革新
        木本 恒暢; 須田 淳; 西 佑介
        Cue : 京都大学電気関係教室技術情報誌, Mar. 2014
      • Detection of minority carrier traps in p-type 4H-SiC
        G. Alfieri; T. Kimoto
        APPLIED PHYSICS LETTERS, Mar. 2014, Peer-reviewed
      • Effect of ultrathin AIN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed
      • Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging
        Chihiro Kawahara; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2014, Peer-reviewed
      • Ab initio prediction of SiC nanotubes with negative strain energy
        G. Alfieri; T. Kimoto
        APPLIED PHYSICS LETTERS, Jan. 2014, Peer-reviewed
      • Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas
        Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2014, Peer-reviewed
      • Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements
        Hironori Yoshioka; Takashi Nakamura; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jan. 2014, Peer-reviewed
      • Development of Ultrahigh Voltage SiC Power Devices
        Kenji Fukuda; Dai Okamoto; Shinsuke Harada; Yasunori Tanaka; Yoshiyuki Yonezawa; Tadayoshi Deguchi; Shuji Katakami; Hitoshi Ishimori; Shinji Takasu; Manabu Arai; Kensuke Takenaka; Hiroyuki Fujisawa; ManabuTakei; Kazushi Matsumoto; Naoyuki Ohse; Mina Ryo; Chiharu Ota; Kazuto Takao; Makoto Mizukami; Tomohisa Kato; Toru Izumi; Toshihiko Hayashi; Koji Nakayama; Katsunori Asano; Hajime Okumura; Tsunenobu Kimoto
        2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014
      • Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
        Yuichiro Nanen; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-selective Electrochemical Etching
        Kosuke Sato; Kohei Adachi; Hajime Okamoto; Hiroshi Yamaguchi; Tsunenobu Kimoto; Jun Suda
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility
        Hironori Yoshioka; Takashi Nakamura; Junji Senzaki; Atsushi Shimozato; Yasunori Tanaka; Hajime Okumura; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Progress and Future Challenges of Silicon Carbide Devices for Integrated Circuits
        Tsunenobu Kimoto
        2014 IEEE PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2014, Peer-reviewed
      • Minority Carrier Transient Spectroscopy of As-grown, Electron Irradiated and Thermally Oxidized p-type 4H-SiC
        Giovanni Alfieri; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires
        Hajime Tanaka; Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2014, Peer-reviewed
      • Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation
        Naoki Kaji; Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations
        X. T. Trinh; K. Szasz; T. Hornos; K. Kawahara; J. Suda; T. Kimoto; A. Gali; E. Janzen; N. T. Son
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires
        Tanaka H; Mori S; Morioka N; Suda J; Kimoto T
        Journal of Applied Physics, 2014, Peer-reviewed
      • Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires
        Tanaka H; Morioka N; Mori S; Suda J; Kimoto T
        Journal of Applied Physics, 2014, Peer-reviewed
      • Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 degrees C and 1500 degrees C and Measurements of Lifetime and Photoluminescence
        W. M. Klahold; R. P. Devaty; W. J. Choyke; K. Kawahara; T. Kimoto; T. Ohshima
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT
        Tomonori Mizushima; Kensuke Takenaka; Hiroyuki Fujisawa; Tomohisa Kato; Shinsuke Harada; Yasunori Tanaka; Mitsuo Okamoto; Mitsuru Sometani; Dai Okamoto; Naoki Kumagai; Shinichiro Matsunaga; Tadayoshi Deguchi; Manabu Arai; Tetsuo Hatakeyama; Youichi Makifuchi; Tsuyoshi Araoka; Naoyuki Oose; Takashi Tsutsumi; Mitsuru Yoshikawa; Katsumi Tatera; Atsushi Tanaka; Syuji Ogata; Koji Nakayama; Toshihiko Hayashi; Katsunori Asano; Masayuki Harashima; Yukio Sano; Eisuke Morisaki; Manabu Takei; Masaaki Miyajima; Hiroshi Kimura; Akihiro Otsuki; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura; Tsunenobu Kimoto
        2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, Peer-reviewed
      • Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge
        T. Hatakeyama; M. Sometani; K. Fukuda; H. Okumura; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Peer-reviewed
      • Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site
        X. T. Trinh; K. Szász; T. Hornos; K. Kawahara; J. Suda; T. Kimoto; A. Gali; E. Janzén; N. T. Son
        Physical Review B - Condensed Matter and Materials Physics, 26 Dec. 2013, Peer-reviewed
      • Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
        Hiroki Miyake; Koichi Amari; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2013, Peer-reviewed
      • Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation
        Takafumi Okuda; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, Dec. 2013, Peer-reviewed
      • AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Sep. 2013, Peer-reviewed
      • Single-crystalline 4H-SiC micro cantilevers with a high quality factor
        Kohei Adachi; Naoki Watanabe; Hajime Okamoto; Hiroshi Yamaguchi; Tsunenobu Kimoto; Jun Suda
        SENSORS AND ACTUATORS A-PHYSICAL, Aug. 2013, Peer-reviewed
      • Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
        Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2013, Peer-reviewed
      • Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
        Naoki Kaji; Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2013, Peer-reviewed
      • Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
        Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Jun. 2013, Peer-reviewed
      • Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy
        Masahiko Aoki; Hitoshi Kawanowa; Gan Feng; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2013, Peer-reviewed
      • Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC
        Daisuke Hirano; Tsunenobu Kimoto; Yoshihiko Kanemitsu
        JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, Jun. 2013, Peer-reviewed
      • Implementation of High-k Gate Dielectrics in SiC Power MOSFET (Invited)
        T. Hosoi; S. Azumo; Y. Kashiwagi; S. Hosaka; R. Nakamura; Y. Nakano; H. Asahara; T. Nakamura; T. Kimoto; T. Shimura; H. Watanabe
        IEICE Technical Committee on Silicon Device and Materials (SDM), Jun. 2013, Peer-reviewed, Invited
      • Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC
        Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, May 2013, Peer-reviewed
      • Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H-SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy
        Masanobu Yoshikawa; Hirohund Seki; Tsuneyuki Yamane; Yuichiro Nanen; Muneharu Kato; Tsunenobu Kimoto
        APPLIED SPECTROSCOPY, May 2013, Peer-reviewed
      • First-principles study of Cl diffusion in cubic SiC
        G. Alfieri; T. Kimoto
        Journal of Applied Physics, 07 Apr. 2013, Peer-reviewed
      • Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
        G. Alfieri; T. Kimoto
        APPLIED PHYSICS LETTERS, Apr. 2013, Peer-reviewed
      • Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
        Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2013, Peer-reviewed
      • Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
        Koutarou Kawahara; Xuan Thang Trinh; Nguyen Tien Son; Erik Janzen; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Mar. 2013, Peer-reviewed
      • Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces
        Yuichiro Nanen; Muneharu Kato; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Mar. 2013, Peer-reviewed
      • Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs
        Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Mar. 2013, Peer-reviewed
      • Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy
        M. Yoshikawa; K. Inoue; H. Seki; Y. Nanen; M. Kato; T. Kimoto
        APPLIED PHYSICS LETTERS, Feb. 2013, Peer-reviewed
      • E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
        A. Koizumi; V. P. Markevich; N. Iwamoto; S. Sasaki; T. Ohshima; K. Kojima; T. Kimoto; K. Uchida; S. Nozaki; B. Hamilton; A. R. Peaker
        APPLIED PHYSICS LETTERS, Jan. 2013, Peer-reviewed
      • Deep levels generated by thermal oxidation in p-type 4H-SiC
        Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jan. 2013, Peer-reviewed
      • Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
        Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2013, Peer-reviewed
      • Size and geometric effects on conduction band structure of GaAs nanowires
        Hajime Tanaka; Naoya Morioka; Seigo Mori; Jun Suda; Tsunenobu Kimoto
        IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai, 2013, Peer-reviewed
      • Diffusion study of chlorine in SiC by first principles calculations
        Giovanni Alfieri; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, Peer-reviewed
      • Determination of the Electrical Capture Process of the EH6-Center in n-type 4H-SiC
        Jonas Weber; Svetlana Beljakowa; Heiko B. Weber; Gerhard Pensl; Bernd Zippelius; Tsunenobu Kimoto; Michael Krieger
        SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, Peer-reviewed
      • Deep-level-transient spectroscopy characterization of mobility-limiting traps in SiO2/SiC interfaces on C-face 4H-SiC
        T. Hatakeyama; T. Shimizu; T. Suzuki; Y. Nakabayashi; H. Okumura; T. Kimoto
        Materials Science Forum, 2013, Peer-reviewed
      • Laplace transform deep level transient spectroscopy study of the EH6/7 center
        Giovanni Alfieri; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, Peer-reviewed
      • Persistent photoconductivity in p-type 4H-SiC bulk crystals
        Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        Materials Science Forum, 2013, Peer-reviewed
      • Ultrahigh Voltage SiC Bipolar Devices
        Kenji Fukuda; Dai Okamoto; Shinsuke Harada; Yasunori Tanaka; Yoshiyuki Yonezawa; Tadayoshi Deguchi; Shuji Katakami; Hitoshi Ishimori; Shinji Takasu; Manabu Arai; Kensuke Takenaka; Hiroyuki Fujisawa; Manabu Takei; Kazushi Matsumoto; Naoyuki Ohse; Mina Ryo; Chiharu Ota; Kazuto Takao; Makoto Mizukami; Tomohisa Kato; Toru Izumi; Toshihiko Hayashi; Koji Nakayama; Katsunori Asano; Hajime Okumura; Tsunenobu Kimoto
        2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2013
      • AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上
        細井 卓治; 東雲 秀司; 柏木 勇作; 保坂 重敏; 中村 亮太; 箕谷 周平; 中野 佑紀; 浅原 浩和; 中村 孝; 木本 恒暢; 志村 考功; 渡部 平司
        電子情報通信学会 シリコン材料・デバイス研究会(SDM), Jan. 2013, Peer-reviewed, Invited
      • Low V-f and Highly Reliable 16 kV Ultrahigh Voltage SiC Flip-Type n-channel Implantation and Epitaxial IGBT
        Yoshiyuki Yonezawa; Tomonori Mizushima; Kensuke Takenaka; Hiroyuki Fujisawa; Tomohisa Kato; Shinsuke Harada; Yasunori Tanaka; Mitsuo Okamoto; Mitsuru Sometani; Dai Okamoto; Naoki Kumagai; Shinichiro Matsunaga; Tadayoshi Deguchi; Manabu Arai; Tetsuo Hatakeyama; Youichi Makifuchi; Tsuyoshi Araoka; Naoyuki Oose; Takashi Tsutsumi; Mitsuru Yoshikawa; Katsumi Tatera; Masayuki Harashima; Yukio Sano; Eisuke Morisaki; Manabu Takei; Masaaki Miyajima; Hiroshi Kimura; Akihiro Otsuki; Kenji Fukuda; Hajime Okumura; Tsunenobu Kimoto
        2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Peer-reviewed
      • Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of nio-based resistive switching cells
        Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto; Tsunenobu Kimoto
        Materials Research Society Proceedings, Jan. 2013, Peer-reviewed
      • Fabrication of Ultrahigh-Voltage SiC PiN Diodes with Low On-Resistance
        梶直樹; 丹羽弘樹; 須田淳; 木本恒暢
        電子情報通信学会技術研究報告, 30 Nov. 2012
      • The Effects of Transverse Electric Fields on the Electronic Properties of SiC Nanostructures
        G. Alfieri; T. Kimoto
        JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, Nov. 2012, Peer-reviewed
      • Thermo-Optic Coefficients of 4H-SiC, GaN, and AIN for Ultraviolet to Infrared Regions up to 500 degrees C
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2012, Peer-reviewed
      • 21-kV SiC BJTs With Space-Modulated Junction Termination Extension
        Hiroki Miyake; Takafumi Okuda; Hiroki Niwa; Tsunenobu Kimoto; Jun Suda
        IEEE ELECTRON DEVICE LETTERS, Nov. 2012, Peer-reviewed
      • Negative-U System of Carbon Vacancy in 4H-SiC
        N. T. Son; X. T. Trinh; L. S. Lovlie; B. G. Svensson; K. Kawahara; J. Suda; T. Kimoto; T. Umeda; J. Isoya; T. Makino; T. Ohshima; E. Janzen
        PHYSICAL REVIEW LETTERS, Oct. 2012, Peer-reviewed
      • Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
        Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Oct. 2012, Peer-reviewed
      • Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
        Shuhei Ichikawa; Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Oct. 2012, Peer-reviewed
      • Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures
        Hiroki Niwa; Gan Feng; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Oct. 2012, Peer-reviewed
      • Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers
        T. Hayashi; K. Asano; J. Suda; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Sep. 2012, Peer-reviewed
      • Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC
        G. Alfieri; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Sep. 2012, Peer-reviewed
      • Thermal instability effects in SiC Power MOSFETs
        Alberto Castellazzi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara
        MICROELECTRONICS RELIABILITY, Sep. 2012, Peer-reviewed
      • 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 degrees C
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Sep. 2012, Peer-reviewed
      • Generation of very fast states by nitridation of the SiO2/SiC interface
        Hironori Yoshioka; Takashi Nakamura; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jul. 2012, Peer-reviewed
      • 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
        Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Jun. 2012, Peer-reviewed
      • Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC
        S. Sasaki; J. Suda; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, May 2012, Peer-reviewed
      • Theoretical study of Cl-related defect complexes in cubic SiC
        G. Alfieri; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, May 2012, Peer-reviewed
      • AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
        Ryosuke Kikuchi; Hironori Okumura; Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, May 2012, Peer-reviewed
      • Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
        Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2012, Peer-reviewed
      • Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC
        F. Yan; R. P. Devaty; W. J. Choyke; A. Gali; T. Kimoto; T. Ohshima; G. Pensl
        APPLIED PHYSICS LETTERS, Mar. 2012, Peer-reviewed
      • Analytical model for reduction of deep levels in SiC by thermal oxidation
        Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Mar. 2012, Peer-reviewed
      • <教室通信>博士課程前後期連携教育プログラムについて
        木本 恒暢
        Cue : 京都大学電気関係教室技術情報誌, Mar. 2012
      • Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
        Katsunori Danno; Hiroaki Saitoh; Akinori Seki; Takayuki Shirai; Hiroshi Suzuki; Takeshi Bessho; Yoichiro Kawai; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Mar. 2012, Peer-reviewed
      • Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy
        M. Yoshikawa; S. Ogawa; K. Inoue; H. Seki; Y. Tanahashi; H. Sako; Y. Nanen; M. Kato; T. Kimoto
        APPLIED PHYSICS LETTERS, Feb. 2012, Peer-reviewed
      • High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime
        Bernd Zippelius; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Feb. 2012, Peer-reviewed
      • Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy
        Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2012, Peer-reviewed
      • Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Feb. 2012, Peer-reviewed
      • Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance
        Hironori Yoshioka; Takashi Nakamura; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jan. 2012, Peer-reviewed
      • Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices
        T. Kimoto; J. Suda; G. Feng; H. Miyake; K. Kawahara; H. Niwa; T. Okuda; S. Ichikawa; Y. Nishi
        GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, Peer-reviewed
      • Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics
        Takuji Hosoi; Shuji Azumo; Yusaku Kashiwagi; Shigetoshi Hosaka; Ryota Nakamura; Shuhei Mitani; Yuki Nakano; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe
        2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012, Peer-reviewed
      • Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes
        Hiroki Niwa; Jun Suda; Tsunenobu Kimoto
        IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 2012, Peer-reviewed
      • Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
        Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
        R. P. Devaty; Fei Yan; W. J. Choyke; A. Gali; T. Kimoto; T. Ohshima
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?
        Bernd Zippelius; Alexander Glas; Heiko B. Weber; Gerhard Pensl; Tsunenobu Kimoto; Michael Krieger
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
        S. Sasaki; J. Suda; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Diffusion and gettering of transition metals in 4H-SiC
        K. Danno; H. Saitoh; A. Seki; T. Shirai; H. Suzuki; T. Bessho; Y. Kawai; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Enhanced Current Gain (> 250) in 4H-SiC Bipolar Junction Transistors by A Deep-Level-Reduction Process
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes
        Hiroki Niwa; Gan Feng; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps
        B. Zippelius; J. Suda; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Chlorine in SiC: Experiment and Theory
        G. Alfieri; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, Peer-reviewed
      • Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
        IWATA Tatsuya; NISHI Yusuke; KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 09 Dec. 2011
      • Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
        IWATA Tatsuya; NISHI Yusuke; KIMOTO Tsunenobu
        電子情報通信学会技術研究報告, 09 Dec. 2011
      • Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
        MORI Seigo; MORIOKA Naoya; SUDA Jun; KIMOTO Tsunenobu
        電子情報通信学会技術研究報告, 09 Dec. 2011
      • Demonstration of 15kV 4H-SiC PiN Diodes with Improved Junction Termination Structures
        NIWA Hiroki; FENG Gan; SUDA Jun; KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 09 Dec. 2011
      • Ab initio study of isolated chlorine defects in cubic SiC
        G. Alfieri; T. Kimoto
        JOURNAL OF PHYSICS-CONDENSED MATTER, Oct. 2011, Peer-reviewed
      • A study of SiC Power BJT performance and robustness
        A. Castellazzi; T. Takuno; R. Onishi; T. Funaki; T. Kimoto; T. Hikihara
        MICROELECTRONICS RELIABILITY, Sep. 2011, Peer-reviewed
      • Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal-Oxide-Semiconductor Devices
        Masato Noborio; Michael Grieb; Anton J. Bauer; Dethard Peters; Peter Friedrichs; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2011, Peer-reviewed
      • SiC power devices for high-efficiency power conversion
        KIMOTO Tsunenobu
        應用物理, 10 Aug. 2011, Peer-reviewed
      • Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed
      • Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures
        Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed
      • Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy
        Shunsaku Ueta; Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jul. 2011, Peer-reviewed
      • 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001)
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        IEEE ELECTRON DEVICE LETTERS, Jul. 2011, Peer-reviewed
      • Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation
        Hiromi Kaneko; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Jun. 2011, Peer-reviewed
      • Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers
        T. Hayashi; K. Asano; J. Suda; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Jun. 2011, Peer-reviewed
      • Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy
        Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Keiko Matsuda; Yusaku Tanahashi; Hideki Sako; Yuihiro Nanen; Muneharu Kato; Tsunenobu Kimoto
        APPLIED SPECTROSCOPY, May 2011, Peer-reviewed
      • Silicon Carbide
        Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl
        Silicon Carbide, 28 Apr. 2011, Peer-reviewed
      • Preface
        Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl
        Silicon Carbide, 28 Apr. 2011, Peer-reviewed
      • Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation
        Tsunenobu Kimoto; Katsunori Danno; Jun Suda
        Silicon Carbide, 28 Apr. 2011, Peer-reviewed
      • Silicon Carbide
        Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl
        Silicon Carbide, 28 Mar. 2011, Peer-reviewed
      • High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen
        B. Zippelius; S. Beljakowa; M. Krieger; G. Pensl; S. A. Reshanov; M. Noborio; T. Kimoto; V. V. Afanas'ev
        Silicon Carbide, 28 Mar. 2011, Peer-reviewed
      • 4H-SiC MISFETs with Nitrogen-Containing Insulators
        Masato Noborio; Jun Suda; Svetlana Beljakowa; Michael Krieger; Tsunenobu Kimoto
        Silicon Carbide, 28 Mar. 2011, Peer-reviewed
      • Preface
        Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl
        Silicon Carbide, 28 Mar. 2011, Peer-reviewed
      • Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors
        Gerhard Pensl; Svetlana Beljakowa; Thomas Frank; Kunyuan Gao; Florian Speck; Thomas Seyller; Lothar Ley; Florin Ciobanu; Valery Afanas'ev; Andre Stesmans; Tsunenobu Kimoto; Adolf Schöner
        Silicon Carbide, 28 Mar. 2011, Peer-reviewed
      • Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations
        G. Alfieri; T. Kimoto
        APPLIED PHYSICS LETTERS, Mar. 2011, Peer-reviewed
      • Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure
        Naoya Morioka; Hironori Yoshioka; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Mar. 2011, Peer-reviewed
      • Bandgap shift by quantum confinement effect in < 100 > Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations
        Hironori Yoshioka; Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Mar. 2011, Peer-reviewed
      • Origin of Etch Hillocks Formed on On-Axis SiC(000(1)over-bar) Surfaces by Molten KOH Etching
        Jun Suda; Haruki Shoji; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2011, Peer-reviewed
      • Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
        Masashi Kato; Hidenori Ono; Masaya Ichimura; Gan Feng; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2011, Peer-reviewed
      • Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in N2O or NO
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        IEEE ELECTRON DEVICE LETTERS, Mar. 2011, Peer-reviewed
      • The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC
        G. Alfieri; T. Kimoto
        JOURNAL OF PHYSICS-CONDENSED MATTER, Feb. 2011, Peer-reviewed
      • Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
        Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Feb. 2011, Peer-reviewed
      • Epitaxial growth and defect control of SiC for high-voltage power devices
        Tsunenobu Kimoto; Jun Suda
        Journal of the Vacuum Society of Japan, 2011, Peer-reviewed
      • Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers
        Massimo Camarda; Andrea Canino; Antonino La Magna; Francesco La Via; G. Feng; T. Kimoto; M. Aoki; H. Kawanowa
        APPLIED PHYSICS LETTERS, Jan. 2011, Peer-reviewed
      • Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers
        T. Hayashi; K. Asano; J. Suda; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Jan. 2011, Peer-reviewed
      • Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC
        S. Sasaki; K. Kawahara; G. Feng; G. Alfieri; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Jan. 2011, Peer-reviewed
      • Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
        Yusuke Nishi; Tatsuya Iwata; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2011, Peer-reviewed
      • Epitaxial growth and defect control of SiC for high-voltage power devices
        Tsunenobu Kimoto; Jun Suda
        Journal of the Vacuum Society of Japan, 2011, Peer-reviewed
      • Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
        Atsushi Koizumi; Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Tsunenobu Kimoto; Kazuo Uchida; Shinji Nozaki
        SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, Peer-reviewed
      • Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, Peer-reviewed
      • Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
        Muneharu Kato; Yuichiro Nanen; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, Peer-reviewed
      • Impact of carrier lifetimes on non-destructive mapping of dislocations in 4H-SiC epilayers
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, Peer-reviewed
      • Electrically active defects in electron irradiated p-type 6H-SiC
        Giovanni Alfieri; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, Peer-reviewed
      • Correlation between oxygen composition and electrical properties in NiO thin films for resistive random access memory
        Yusuke Nishi; Tatsuya Iwata; Tsunenobu Kimoto
        Materials Research Society Symposium Proceedings, 24 Dec. 2010, Peer-reviewed
      • Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers
        Tsunenobu Kimoto; Toru Hiyoshi; Toshihiko Hayashi; Jun Suda
        JOURNAL OF APPLIED PHYSICS, Oct. 2010, Peer-reviewed
      • Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        IEEE ELECTRON DEVICE LETTERS, Sep. 2010, Peer-reviewed
      • Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC
        Koutarou Kawahara; Jun Suda; Gerhard Pensl; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Aug. 2010, Peer-reviewed
      • Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF ELECTRONIC MATERIALS, Aug. 2010, Peer-reviewed
      • Engineering the band gap of SiC nanotubes with a transverse electric field
        G. Alfieri; T. Kimoto
        APPLIED PHYSICS LETTERS, Jul. 2010, Peer-reviewed
      • Deep levels induced by reactive ion etching in n- and p-type 4H-SiC
        Koutarou Kawahara; Michael Krieger; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jul. 2010, Peer-reviewed
      • Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001)
        Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, Peer-reviewed
      • Shallow defects observed in as-grown and electron-irradiated or He+-implanted Al-doped 4H-SiC epilayers
        S. Beljakowa; S. A. Reshanov; B. Zippelius; M. Krieger; G. Pensl; K. Danno; T. Kimoto; S. Onoda; T. Ohshima; Fei Yan; R. P. Devaty; W. J. Choyke
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
        G. Alfieri; T. Kimoto; G. Pensl
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • New lines and issues associated with deep defect spectra in electron, proton and He-4 ion irradiated 4H SiC
        F. Yan; R. P. Devaty; W. J. Choyke; T. Kimoto; T. Ohshima; G. Pensl; A. Gali
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
        M. Weidner; L. Trapaidze; G. Pensl; S. A. Reshanov; A. Schoener; H. Itoh; T. Ohshima; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons
        F. Yan; R. P. Devaty; W. J. Choyke; K. Danno; G. Alfieri; T. Kimoto; S. Onoda; T. Ohshima; S. A. Reshanov; S. Beljakowa; B. Zippelius; G. Pensl
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate
        G. Feng; J. Suda; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
        M. Grieb; M. Noborio; D. Peters; A. J. Bauer; P. Friedrichs; T. Kimoto; H. Ryssel
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Reactive-Ion-Etching Induced Deep Levels Observed in n-type and p-type 4H-SiC
        K. Kawahara; G. Alfieri; M. Krieger; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
        T. Kimoto; G. Feng; T. Hiyoshi; K. Kawahara; M. Noborio; J. Suda
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
        Masato Noborio; Michael Grieb; Anton J. Bauer; Dethard Peters; Peter Friedrichs; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Detection and Electrical Characterization of Defects at the SiO2/4H-SiC: Interface
        Michael Krieger; Svetlana Beljakowa; Bernd Zippelius; Valeri V. Afanas'ev; Anton J. Bauer; Yuichiro Nanen; Tsunenobu Kimoto; Gerhard Pensl
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
        Y. Nanen; B. Zippelius; S. Beljakowa; L. Trapaidze; M. Krieger; T. Kimoto; G. Pensl
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-type and p-type 4H-SiC
        K. Kawahara; G. Alfieri; T. Hiyoshi; G. Pensl; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons
        S. A. Reshanov; S. Beljakowa; B. Zippelius; G. Pensl; K. Danno; G. Alfieri; T. Kimoto; S. Onoda; T. Ohshima; Fei Yan; R. P. Devaty; W. J. Choyke
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Temperature and Injection Level Dependencies of Carrier Lifetimes in p-type and n-type 4H-SiC Epilayers
        T. Hayashi; K. Asano; J. Suda; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, Peer-reviewed
      • Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
        Tsunenobu Kimoto; Yuichiro Nanen; Toshihiko Hayashi; Jun Suda
        APPLIED PHYSICS EXPRESS, 2010, Peer-reviewed
      • Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
        Jun Suda; Kazuki Yamaji; Yuichirou Hayashi; Tsunenobu Kimoto; Kenji Shimoyama; Hideo Namita; Satoru Nagao
        APPLIED PHYSICS EXPRESS, 2010, Peer-reviewed
      • Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, Peer-reviewed
      • Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00)
        Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, 2010, Peer-reviewed
      • Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal-Oxide-Semiconductor Field-Effect Transistors
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, Peer-reviewed
      • Characterization of major in-grown stacking faults in 4H-SiC epilayers
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        PHYSICA B-CONDENSED MATTER, Dec. 2009, Peer-reviewed
      • Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
        Jun Suda; Naoki Watanabe; Katsuhiko Fukunaga; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2009, Peer-reviewed
      • Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure
        Yuichiro Nanen; Hironori Yoshioka; Masato Noborio; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Nov. 2009, Peer-reviewed
      • Thermal stability of deep levels between room temperature and 1500 degrees C in as-grown 3C-SiC
        G. Alfieri; H. Nagasawa; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Oct. 2009, Peer-reviewed
      • 4H-SiC MISFETs with nitrogen-containing insulators
        Masato Noborio; Jun Suda; Svetlana Beljakowa; Michael Krieger; Tsunenobu Kimoto
        PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Oct. 2009, Peer-reviewed
      • High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
        B. Zippelius; S. Beljakowa; M. Krieger; G. Pensl; S. A. Reshanov; M. Noborio; T. Kimoto; V. V. Afanas'ev
        PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Oct. 2009, Peer-reviewed
      • A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
        Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Oct. 2009, Peer-reviewed
      • Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
        Toru Hiyoshi; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Sep. 2009, Peer-reviewed
      • Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions
        Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS EXPRESS, Sep. 2009, Peer-reviewed
      • In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
        Kazuhiro Akiyama; Yasuhiro Ishii; Sohei Abe; Hisashi Murakami; Yoshinao Kumagai; Hironori Okumura; Tsunenobu Kimoto; Jun Suda; Akinori Koukitu
        JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2009, Peer-reviewed
      • P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Sep. 2009, Peer-reviewed
      • Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors
        Hironori Yoshioka; Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Aug. 2009, Peer-reviewed
      • 1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar)
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        IEEE ELECTRON DEVICE LETTERS, Aug. 2009, Peer-reviewed
      • The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study
        G. Alfieri; T. Kimoto
        NANOTECHNOLOGY, Jul. 2009, Peer-reviewed
      • Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC
        Koutarou Kawahara; Giovanni Alfieri; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jul. 2009, Peer-reviewed
      • Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers
        Atsushi Koizumi; Jun Suda; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jul. 2009, Peer-reviewed
      • Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures
        Hironori Okumura; Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jun. 2009, Peer-reviewed
      • Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices
        Tsuyoshi Funaki; Nathabhat Phankong; Tsunenobu Kimoto; Takashi Hikihara
        IEEE TRANSACTIONS ON POWER ELECTRONICS, May 2009, Peer-reviewed
      • Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
        Toru Hiyoshi; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Apr. 2009, Peer-reviewed
      • Triple Shockley type stacking faults in 4H-SiC epilayers
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Mar. 2009, Peer-reviewed
      • Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
        Jun Suda; Hiroki Miyake; Koichi Amari; Yuki Nakano; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2009, Peer-reviewed
      • Electronic properties of finite-length silicon carbide nanotubes
        G. Alfieri; T. Kimoto
        PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Feb. 2009, Peer-reviewed
      • Single versus double ion implantation a deep level study
        G. Alfieri; T. Kimoto
        PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Feb. 2009, Peer-reviewed
      • Determination of the thermo-optic coefficients of GaN and AlN up to 515 degrees C
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, Peer-reviewed
      • High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and non-Basal Faces
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Deep Levels Generated by Ion-implantation in n- and p-type 4H-SiC
        Koutarou Kawahara; Giovanni Alfieri; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
        Yuichiro Nanen; Hironori Yoshioka; Masato Noborio; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-oxidation of the N-/Al-coimplanted Surface Layer
        S. A. Reshanov; S. Beljakowa; T. Frank; B. Zippelius; M. Krieger; G. Pensl; M. Noborio; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-thin AlN Layer at Emitter-junction
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
        Giovanni Alfieri; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N(2)O or NO
        M. Grieb; M. Noborio; D. Peters; A. J. Bauer; P. Friedrichs; T. Kimoto; H. Ryssel
        SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, Peer-reviewed
      • Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
        S. A. Reshanov; G. Pensl; K. Danno; T. Kimoto; S. Hishiki; T. Ohshima; Fei Yan; R. P. Devaty; W. J. Choyke
        SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, Peer-reviewed
      • Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO(2) Stack Gate Structures
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, Peer-reviewed
      • Search for hydrogen related defects in p-type 6H and 4H-SiC
        G. Alfieri; T. Kimoto
        Materials Science Forum, 2009, Peer-reviewed
      • Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
        Toru Hiyoshi; Tsutomu Hori; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, Peer-reviewed
      • High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
        Takeyoshi Masuda; Shin Harada; Takashi Tsuno; Yasuo Namikawa; Tsunenobu Kimoto; Ki Mot
        SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, Peer-reviewed
      • The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        JOURNAL OF APPLIED PHYSICS, Nov. 2008, Peer-reviewed
      • N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Nov. 2008, Peer-reviewed
      • Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching
        Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2008, Peer-reviewed
      • Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing
        Kazuki Yamaji; Masato Noborio; Jun Suda; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS, Oct. 2008, Peer-reviewed
      • Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS EXPRESS, Oct. 2008, Peer-reviewed
      • Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN
        H. Okumura; M. Horita; T. Kimoto; J. Suda
        APPLIED SURFACE SCIENCE, Sep. 2008, Peer-reviewed
      • Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model
        Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara
        IEEE TRANSACTIONS ON POWER ELECTRONICS, Sep. 2008, Peer-reviewed
      • A study on electro thermal response of SiC power module during high temperature operation
        Tsuyoshi Funaki; Akira Nishio; Tsunenobu Kimoto; Takashi Hikihara
        IEICE ELECTRONICS EXPRESS, Aug. 2008, Peer-reviewed
      • Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth
        Masahiro Horita; Tsunenobu Kimoto; Jun Suda
        APPLIED PHYSICS LETTERS, Aug. 2008, Peer-reviewed
      • 4H-SiC MIS capacitors and MISFETs with deposited SiN(x)/SiO(2) stack-gate structures
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Aug. 2008, Peer-reviewed
      • Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes
        Toru Hiyoshi; Tsutomu Hori; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Aug. 2008, Peer-reviewed
      • Special issue on silicon carbide devices and technology
        Jian H. Zhao; Gerhard Pensl; Tsunenobu Kimoto; Hiroyuki Matsunami; Hajime Kosugi; James A. Cooper; Maurice Weiner
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Aug. 2008, Peer-reviewed
      • High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC
        Giovanni Alfieri; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Jul. 2008, Peer-reviewed
      • Evidence for a hydrogen-related defect in implanted p-type 4H-SiC
        G. Alfieri; T. Kimoto
        NEW JOURNAL OF PHYSICS, Jul. 2008, Peer-reviewed
      • Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations
        Kei Senga; Tsunenobu Kimoto; Jun Suda
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2008, Peer-reviewed
      • Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
        Gerhard Pensl; Svetlana Beljakowa; Thomas Frank; Kunyuan Gao; Florian Speck; Thomas Seyller; Lothar Ley; Florin Ciobanu; Valery V. Afanas'ev; Andre Stesmans; Tsunenobu Kimoto; Adolf Schoener
        PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jul. 2008, Peer-reviewed
      • Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
        Tsunenobu Kimoto; Katsunori Danno; Jun Suda
        PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jul. 2008, Peer-reviewed
      • Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Jun. 2008, Peer-reviewed
      • High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena
        Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara
        IEICE ELECTRONICS EXPRESS, Mar. 2008, Peer-reviewed
      • Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation
        A. Oowadaa; M. Takeuchi; Y. Sakai; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto
        JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2008, Peer-reviewed
      • Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device
        Mitsuaki Takeuchi; Toshihiko Kojima; Atsushi Oowada; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Sigeki Sakai; Tsunenobu Kimoto
        JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2008, Peer-reviewed
      • Direct determination of Burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography
        Daisuke Nakamura; Satoshi Yamaguchi; Yoshiharu Hirose; Toshihiko Tani; Kazumasa Takatori; Kentarou Kajiwara; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Jan. 2008, Peer-reviewed
      • Energy distribution measurements of silicon field emitter arrays with a hemispherical energy analyzer
        Yoshiki Sakai; Atsushi Oowada; Mitsuaki Takeuchi; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai; Tsunenobu Kimoto
        Journal of the Vacuum Society of Japan, 2008, Peer-reviewed
      • Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy
        S. A. Reshanov; G. Pensl; K. Danno; T. Kimoto; S. Hishiki; T. Ohshima; H. Itoh; Fei Yan; R. P. Devaty; W. J. Choyke
        JOURNAL OF APPLIED PHYSICS, Dec. 2007, Peer-reviewed
      • Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (DOI:10.1016/j.jcrysgro.2007.05.009)
        Tsutomu Hori; Katsunori Danno; Tsunenobu Kimoto
        Journal of Crystal Growth, 15 Oct. 2007, Peer-reviewed
      • Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET
        Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara
        IEICE ELECTRONICS EXPRESS, Aug. 2007, Peer-reviewed
      • Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition
        Tsutomu Hori; Katsunori Danno; Tsunenobu Kimoto
        JOURNAL OF CRYSTAL GROWTH, Aug. 2007, Peer-reviewed
      • Thermal stability of defects in p-type as-grown 6H-SiC
        G. Alfieri; T. Kimoto
        JOURNAL OF PHYSICS-CONDENSED MATTER, Aug. 2007, Peer-reviewed
      • Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing
        Yuki Negoro; Tsunenobu Kimoto; Hiroyuki Matsunami; Gerhard Pensl
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Aug. 2007, Peer-reviewed
      • Power conversion with SiC devices at extremely high ambient temperatures
        Tsuyoshi Funaki; Juan Carlos Balda; Jeremy Junghans; Avinash S. Kashyap; H. Alan Mantooth; Fred Barlow; Tsunenobu Kimoto; Takashi Hikihara
        IEEE TRANSACTIONS ON POWER ELECTRONICS, Jul. 2007, Peer-reviewed
      • Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density
        Daisuke Nakamura; Satoshi Yamaguchi; Itaru Gunjishima; Yoshiharu Hirose; Tsunenobu Kimoto
        JOURNAL OF CRYSTAL GROWTH, Jun. 2007, Peer-reviewed
      • Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC
        Giovanni Alfieri; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, May 2007, Peer-reviewed
      • Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
        Katsunori Danno; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, May 2007, Peer-reviewed
      • Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
        Katsunori Danno; Daisuke Nakamura; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, May 2007, Peer-reviewed
      • 4H-SiC lateral double RESURF MOSFETs with low ON resistance
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, May 2007, Peer-reviewed
      • A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy
        J. Suda; M. Horita; R. Armitage; T. Kimoto
        JOURNAL OF CRYSTAL GROWTH, Apr. 2007, Peer-reviewed
      • Impacts of growth parameters on deep levels in n-type 4H-SiC
        Katsunori Danno; Tsutomu Hori; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Mar. 2007, Peer-reviewed
      • m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates
        R. Armitage; M. Horita; J. Suda; T. Kimoto
        JOURNAL OF APPLIED PHYSICS, Feb. 2007, Peer-reviewed
      • Reduction in potential barrier height of AlGaN/GaN heterostructures by SiN passivation
        N. Onojima; M. Higashiwaki; J. Suda; T. Kimoto; T. Mimura; T. Matsui
        JOURNAL OF APPLIED PHYSICS, Feb. 2007, Peer-reviewed
      • Control of the flatband voltage of 4H-SiC metal-oxide semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum
        Thomas Frank; Svetlana Beljakowa; Gerhard Pensl; Tsunenobu Kimoto; Valery V. Afanas'ev
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Deep levels in electron-irradiated n- and p-type 4H-SiC investigated by deep level transient Spectroscopy
        Katsunori Danno; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Lateral 4H-SiC MOSFETs with low on-resistance by using two-zone double RESURF structure
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Growth and electrical characterization of 4H-SiC epilayers
        T. Kimoto; K. Danno; T. Hori; H. Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Isochronal annealing study of deep levels in hydrogen implanted p-type 4H-SiC
        G. Alfieri; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Interface properties of SiO2/4H-SiC(0001) with large off-angles formed by N2O oxidation
        Hiroaki Saitoh; Akinori Seki; Akira Manabe; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Low trap concentration and low basal-plane dislocation density in 4H-SiC,Epilayers grown at high growth rate
        T. Hori; K. Danno; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Impact of acceptor concentration on electronic properties of n(+)-GaN/p(+)-SiC heterojunction for GaN/SiC heterojunction bipolar transistor
        Koichi Amari; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, Peer-reviewed
      • Crystal growth
        Noboru Ohtani; Takao Nakamura; Hitoshi Sumiya; Fumio Hasegawa; Seiji Sarayama; Takashi Taniguchi; Kenji Watanabe; Shinsuke Fujiwara; Yasube Kashiwaba; Ikuo Niikura; Tsunenobu Kimoto; Takashi Egawa; Hideyo Okushi; Kentaro Onabe; Kazuyuki Tadatomo; Kazumasa Hiramatsu; Akihiko Yoshikawa; Hideo Kawanishi; Katsuhiro Akimoto; Takafumi Yao; Takashi Hanada
        Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 2007, Peer-reviewed
      • Reduction of threading dislocations in nonpolar 4H-AIN on 4H-SiC (11(2)over-bar0) grown by molecular-beam epitaxy with slightly Al-rich conditions
        M. Horita; J. Suda; T. Kimoto
        PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, Peer-reviewed
      • XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation
        N. Onojima; M. Higashiwaki; T. Matsui; T. Mimura; J. Suda; T. Kimoto
        PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, Peer-reviewed
      • Long Time Operation of Si:C Field Emitter Arrays in H_2 Gas Atmosphere
        OOWADA Atsushi; KOJIMA Toshihiko; TAKEUCHI Mitsuaki; GOTOH Yasuhito; NAGAO Masayoshi; TSUJI Hiroshi; ISHIKAWA Junzo; SAKAI Shigeki; KIMOTO Tsunenobu
        Journal of the Vacuum Society of Japan, 2007, Peer-reviewed
      • Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
        Katsunori Danno; Tsunenobu Kimoto
        JOURNAL OF APPLIED PHYSICS, Dec. 2006, Peer-reviewed
      • Epitaxial growth of 4H-SiC{0001} and reduction of deep levels
        T. Kimoto; K. Wada; K. Danno
        SUPERLATTICES AND MICROSTRUCTURES, Oct. 2006, Peer-reviewed
      • Source of surface morphological defects formed on 4H-SiC homoepitaxial films
        Tatsuya Okada; Kengo Ochi; Hiroyuki Kawahara; Takuro Tomita; Shigeki Matsuo; Makoto Yamaguchi; Kouichi Higashimine; Tsunenobu Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Oct. 2006, Peer-reviewed
      • High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy
        Masahiro Horita; Jun Suda; Tsunenobu Kimoto
        APPLIED PHYSICS LETTERS, Sep. 2006, Peer-reviewed
      • Optical cross sections of deep levels in 4H-SiC
        M. Kato; S. Tanaka; M. Ichimura; E. Arai; S. Nakamura; T. Kimoto; R. Paessler
        JOURNAL OF APPLIED PHYSICS, Sep. 2006, Peer-reviewed
      • Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage
        Tsuyoshi Funaki; Shuntaro Matsuzaki; Tsunenobu Kimoto; Takashi Hikihara
        IEICE ELECTRONICS EXPRESS, Aug. 2006, Peer-reviewed
      • Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition
        K Wada; T Kimoto; K Nishikawa; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Jun. 2006, Peer-reviewed
      • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
        S Kamiyama; T Maeda; Y Nakamura; M Iwaya; H Amano; Akasaki, I; H Kinoshita; T Furusho; M Yoshimoto; T Kimoto; J Suda; A Henry; IG Ivanov; JP Bergman; B Monemar; T Onuma; SF Chichibu
        JOURNAL OF APPLIED PHYSICS, May 2006, Peer-reviewed
      • Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment
        Hirofumi Suto; Shunjiro Fujii; Nobuhiko Miyamae; Robert D. Armitage; Jun Suda; Tsunenobu Kimoto; Shin-ichi Honda; Mitsuhiro Katayama
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, May 2006, Peer-reviewed
      • Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth
        R Armitage; J Suda; T Kimoto
        SURFACE SCIENCE, Apr. 2006, Peer-reviewed
      • High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers
        K Danno; T Kimoto
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Mar. 2006, Peer-reviewed
      • Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
        R Armitage; J Suda; T Kimoto
        APPLIED PHYSICS LETTERS, Jan. 2006, Peer-reviewed
      • Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics
        Y Negoro; T Kimoto; M Kataoka; Y Takeuchi; RK Malhan; H Matsunami
        MICROELECTRONIC ENGINEERING, Jan. 2006, Peer-reviewed
      • Reduction of on-resistance in 4H-SiC Multi-RESURF MOSFETs
        Masato Noborio; Yuki Negoro; Jun Suda; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, Peer-reviewed
      • Kick-out phenomena in epitaxially boron- and aluminum-doped 4H-SIC during implantation and annealing processes
        Y. Negoro; T. Kimoto; H. Matsunami; G. Pensl
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy
        T. Tomita; S. Matsuo; T. Okada; T. Kimoto; T. Mitani; S.-I. Nakashima
        Materials Science Forum, 2006, Peer-reviewed
      • SiC migration enhanced embedded epitaxial (ME3) growth technology
        Y. Takeuchi; M. Kataoka; T. Kimoto; H. Matsunami; R. K. Malhan
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors
        Jun Suda; Yuki Nakano; Syouta Shimada; Kouichi Amari; Tsunenobu Kimoto
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N2O annealing
        T. Kimoto; H. Kawano; M. Noborio; J. Suda; H. Matsunami
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Origin of surface morphological defects in 4H-SiC homoepitaxial films
        Tatsuya Okada; Kouichi Okamoto; Kengo Ochi; Kouichi Higashimine; Tsunenobu Kimoto
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition
        Hiroaki Saitoh; Akira Manabe; Tsunenobu Kimoto
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Nitrogen implantation - an alternative technique to reduce traps at SiC/SiO(2)-interfaces
        Florin Ciobanu; Thomas Frank; Gerhard Pensl; Valery V. Afanas'ev; Sheron Shamuilia; Adolf Schoner; Tsunenobu Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, Peer-reviewed
      • 半導体デバイスの研究に関する顕著な業績
        木本 恒暢
        米国電気電子工学会シニアメンバー 木本 恒暢教授(電子工学専攻)平成18 年1 月21 日受賞, 2006, Peer-reviewed
      • Impact of III/V ratio on polytype and crystalline quality of AIN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy
        M. Horita; J. Suda; T. Kimoto
        PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, Peer-reviewed
      • Epitaxial growth of 4H-SiC on 4 degrees off-axis (0001) and (000-1) substrates by hot-wall CVD
        Keiji Wada; Tsunenobu Kimoto; Kimito Nishikawa; Hiroyuki Matsunami
        Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Peer-reviewed
      • Deep hole traps in As-grown 4H-SiC epilayers investigated by deep level transient spectroscopy
        K. Danno; T. Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, Peer-reviewed
      • Dose designing and fabrication of 4H-SiC double RESURF MOSFETs
        M. Noborio; J. Suda; T. Kimoto
        PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, Peer-reviewed
      • Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film
        T Tomita; S Matsuo; T Okada; T Kimoto; H Matsunami; T Mitani; SI Nakashima
        APPLIED PHYSICS LETTERS, Dec. 2005, Peer-reviewed
      • Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001)
        R Armitage; K Nishizono; J Suda; T Kimoto
        JOURNAL OF CRYSTAL GROWTH, Nov. 2005, Peer-reviewed
      • 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET
        T Kimoto; H Kawano; J Suda
        IEEE ELECTRON DEVICE LETTERS, Sep. 2005, Peer-reviewed
      • Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
        M Noborio; Y Kanzaki; J Suda; T Kimoto
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Sep. 2005, Peer-reviewed
      • Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
        H Fujiwara; T Kimoto; T Tojo; H Matsunami
        APPLIED PHYSICS LETTERS, Aug. 2005, Peer-reviewed
      • Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)
        Y Negoro; T Kimoto; H Matsunami
        JOURNAL OF APPLIED PHYSICS, Aug. 2005, Peer-reviewed
      • Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition
        H Fujiwara; K Danno; T Kimoto; T Tojo; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Aug. 2005, Peer-reviewed
      • Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask
        Y Chen; T Kimoto; Y Takeuchi; RK Malhan; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Jul. 2005, Peer-reviewed
      • Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition
        K Danno; T Kimoto; K Asano; Y Sugawara; H Matsunami
        JOURNAL OF ELECTRONIC MATERIALS, Apr. 2005, Peer-reviewed
      • Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation
        T Kimoto; Y Kanzaki; M Noborio; H Kawano; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Mar. 2005, Peer-reviewed
      • Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy
        K Danno; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Mar. 2005, Peer-reviewed
      • Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
        Tsuyoshi Funaki; Juan C. Balda; Jeremy Junghans; Anuwat Jangwanitlert; Sharmila Mounce; Fred D. Barlow; H. Alan Mantooth; Tsunenobu Kimoto; Takashi Hikihara
        IEICE ELECTRONICS EXPRESS, Feb. 2005, Peer-reviewed
      • Short-Channel Effects in 4H-SiC MOSFETs
        M Noborio; Y Kanzaki; J Suda; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing
        Y Negoro; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication
        H Kawano; T Kimoto; J Suda; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD
        A Wada; T Kimoto; K Nishikawa; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Technological aspects of ion implantation in SiC device processes
        Y Negoro; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes
        H Fujiwara; T Kimoto; T Tojo; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • 4H-SiC epitaxial growth on SiC substrates with various off-angles
        H Saitoh; T Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS
        K Danno; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition
        M Kato; S Tanaka; M Ichimura; E Arai; S Nakamura; T Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, Peer-reviewed
      • Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
        T Kimoto; H Kosugi; J Suda; Y Kanzaki; H Matsunami
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Jan. 2005, Peer-reviewed
      • Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor
        Y. Nakano; J. Suda; T. Kimoto
        Physica Status Solidi C: Conferences, 2005, Peer-reviewed
      • 1200 V-class 4H-SiC RIESURF MOSFETs with low on-resistances
        T Kimoto; H Kawano; J Suda
        PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2005, Peer-reviewed
      • Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers
        R Armitage; K Nishizono; J Suda; T Kimoto
        GaN, AIN, InN and Their Alloys, 2005, Peer-reviewed
      • Electrical activation of high-concentration aluminum implanted in 4H-SiC
        Y Negoro; T Kimoto; H Matsunami; F Schmid; G Pensl
        JOURNAL OF APPLIED PHYSICS, Nov. 2004, Peer-reviewed
      • Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001)
        S Nakamura; T Kimoto; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Oct. 2004, Peer-reviewed
      • Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature
        T Okada; Y Negoro; T Kimoto; K Okamoto; N Kujime; N Tanaka; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Oct. 2004, Peer-reviewed
      • Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
        Y Negoro; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Sep. 2004, Peer-reviewed
      • Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition
        Y Chen; T Kimoto; Y Takeuchi; RK Malhan; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Jul. 2004, Peer-reviewed
      • Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition
        K Danno; K Hashimoto; H Saitoh; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Jul. 2004, Peer-reviewed
      • Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)
        Y Negoro; K Katsumoto; T Kimoto; H Matsunami
        JOURNAL OF APPLIED PHYSICS, Jul. 2004, Peer-reviewed
      • Robust 4H-SiC pn diodes fabricated using (1120) face
        Y Negoro; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Feb. 2004, Peer-reviewed
      • Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap
        Y Negoro; K Katsumoto; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient
        Y Kanzaki; H Kinbara; H Kosugi; J Suda; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy
        N Onojima; J Kaido; J Suda; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • 600V 4H-SiC RESURF-type JFET
        K Fujikawa; S Harada; A Ito; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face
        K Danno; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • Homoepltaxlal growth of 4H-SiC on trenched substrates by chemical vapor deposition
        Y. Chen; T. Kimoto; Y. Takeuchi; R.K. Malhan; H. Matsunami
        Materials Science Forum, 2004, Peer-reviewed
      • 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET)
        J Kaido; T Kimoto; J Suda; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • Origin of leakage current in SiC Schottky barrier diodes at high temperature
        HS Saitoh; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face
        Y Negoro; K Katsumoto; T Kimoto; H Matsunami; F Schmid; G Pensl
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition
        H Fujiwara; K Danno; T Kimoto; T Tojo; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, Peer-reviewed
      • Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films
        T Okada; T Kimoto; K Yamai; H Matsunami; F Inoko
        SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, Peer-reviewed
      • Homoepitaxial growth on 4H-SiC {0001}-vicinal faces
        Shun-Ichi Nakamura; Tsunenobu Kimoto; Hiroyuki Matsunami
        Zairyo/Journal of the Society of Materials Science, Japan, 2004, Peer-reviewed
      • SiC JFET dc characteristics under extremely high ambient temperatures
        Tsuyoshi Funaki; Takashi Hikihara; Tsunenobu Kimoto; Juan C. Balda; Jeremy Junghans; Avinash S. Kashyap; Fred D. Barlow; H. Alan Mantooth
        IEICE Electronics Express, 2004, Peer-reviewed
      • Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces
        S Nakamura; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, Peer-reviewed
      • Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8)
        T Kimoto; K Hashimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Dec. 2003, Peer-reviewed
      • 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
        N Onojima; J Suda; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Dec. 2003, Peer-reviewed
      • Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC
        T Okada; T Kimoto; K Yamai; H Matsunami; F Inoko
        MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Nov. 2003, Peer-reviewed
      • Hetero-interface properties of SiO2/4H-SiC on various crystal orientations
        H Matsunami; T Kimoto; H Yano
        IEICE TRANSACTIONS ON ELECTRONICS, Oct. 2003, Peer-reviewed
      • Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps
        S Nakamura; T Kimoto; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Sep. 2003, Peer-reviewed
      • Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions
        S Nakamura; T Kimoto; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Sep. 2003, Peer-reviewed
      • Effect of C/Si ratio on spiral growth on 6H-SiC (0001)
        S Nakamura; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jul. 2003, Peer-reviewed
      • Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition
        K Fujihira; T Kimoto; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Jul. 2003, Peer-reviewed
      • Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition
        Y Chen; T Kimoto; Y Takeuchi; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Jun. 2003, Peer-reviewed
      • Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface
        T Kimoto; T Hirao; K Fujihira; H Kosugi; K Danno; H Matsunami
        APPLIED SURFACE SCIENCE, Jun. 2003, Peer-reviewed
      • Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
        M Miura; S Nakamura; J Suda; T Kimoto; H Matsunami
        IEEE ELECTRON DEVICE LETTERS, May 2003, Peer-reviewed
      • Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition
        T Kimoto; T Hirao; S Nakazawa; H Shiomi; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Feb. 2003, Peer-reviewed
      • High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
        A. Schöner; K. Fujihira; T. Kimoto; H. Matsunami
        Materials Science Forum, 2003, Peer-reviewed
      • Complete Micropipe Dissociation in 4H-SiC(033̄8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
        T. Kimoto; K. Danno; K. Fujihira; H. Shiomi; H. Matsunami
        Materials Science Forum, 2003, Peer-reviewed
      • Wide-Area Homoepltaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
        S.-I. Nakamura; T. Kimoto; H. Matsunami
        Materials Science Forum, 2003, Peer-reviewed
      • Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
        H. Saitoh; T. Kimoto; H. Matsunami
        Materials Science Forum, 2003, Peer-reviewed
      • SiC Epitaxy on Non-Standard Surfaces
        H. Matsunami; T. Kimoto
        Materials Science Forum, 2003, Peer-reviewed
      • SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
        M. Miura; S.-I. Nakamura; J. Suda; T. Kimoto; H. Matsunami
        Materials Science Forum, 2003, Peer-reviewed
      • High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes
        T Kimoto; K Fujimiza; H Shiomi; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jan. 2003, Peer-reviewed
      • High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation
        Y Negoro; T Kimoto; H Matsunami
        ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2003, Peer-reviewed
      • Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy
        N. Onojima; J. Suda; T. Kimoto; H. Matsunami
        Physica Status Solidi C: Conferences, 2003, Peer-reviewed
      • Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy
        N. Onojima; J. Suda; T. Kimoto; H. Matsunami
        Physica Status Solidi C: Conferences, 2003, Peer-reviewed
      • Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
        H Yano; T Hirao; T Kimoto; H Matsunami; H Shiomi
        APPLIED PHYSICS LETTERS, Dec. 2002, Peer-reviewed
      • Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film
        T Okada; T Kimoto; H Noda; T Ebisui; H Matsunami; F Inoko
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Nov. 2002, Peer-reviewed
      • Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
        Y Negoro; N Miyamoto; T Kimoto; H Matsunami
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Sep. 2002, Peer-reviewed
      • Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces
        H Yano; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Jul. 2002, Peer-reviewed
      • Anisotropy in breakdown field of 4H-SiC
        S Nakamura; H Kumagai; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, May 2002, Peer-reviewed
      • High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition
        S Nakamura; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, May 2002, Peer-reviewed
      • High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
        T Kimoto; N Miyamoto; A Schoner; A Saitoh; H Matsunami; K Asano; Y Sugawara
        JOURNAL OF APPLIED PHYSICS, Apr. 2002, Peer-reviewed
      • Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates
        Y Chen; T Kimoto; Y Takeuchi; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Apr. 2002, Peer-reviewed
      • High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition
        S Nakazawa; T Kimoto; K Hashimoto; H Matsunami
        JOURNAL OF CRYSTAL GROWTH, Apr. 2002, Peer-reviewed
      • High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition
        K Fujihira; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Mar. 2002, Peer-reviewed
      • Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC
        SI Nakamura; H Kumagai; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition
        J Suda; S Nakamura; M Miura; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition
        S Nakamura; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Recent achievements and future challenges in SiC homoepitaxial growth
        T Kimoto; S Nakazawa; K Fujihira; T Hirao; S Nakamura; Y Chen; K Hashimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure
        J Suda; S Nakamura; M Miura; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jan. 2002, Peer-reviewed
      • 4H-SiC MOSFETs on (03(3)over-bar8) face
        T Hirao; H Yano; T Kimoto; H Matsunami; H Shiomi
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0)
        Y Negoro; N Miyamoto; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation
        Y Negoro; N Miyamoto; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission
        O Shigiltchoff; T Kimoto; D Hobgood; PG Neudeck; LM Porter; RP Devaty; WJ Choyke
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
        Q Wahab; H Kosugi; H Yano; C Hallin; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor
        S Bai; G Wagner; E Shishkin; WJ Choyke; RP Devaty; M Zhang; P Pirouz; T Kimoto
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD
        K Fujihira; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • The development of 4H-SiC {033̄8} wafers
        K. Nakayama; Y. Miyanagi; H. Shiomi; S. Nishino; T. Kimoto; H. Matsunami
        Materials Science Forum, 2002, Peer-reviewed
      • Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)
        Y Negoro; N Miyamoto; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Jan. 2002, Peer-reviewed
      • Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
        K Fujihira; S Tamura; T Kimoto; H Matsunami
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Jan. 2002, Peer-reviewed
      • Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD
        K Fujihira; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, Peer-reviewed
      • Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates
        Y Chen; T Kimoto; Y Takeuchi; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Peer-reviewed
      • Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition
        T Kimoto; S Nakazawa; K Hashimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Oct. 2001, Peer-reviewed
      • Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0)
        T Kimoto; T Yamamoto; ZY Chen; H Yano; H Matsunami
        JOURNAL OF APPLIED PHYSICS, Jun. 2001, Peer-reviewed
      • Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition
        T Kimoto; ZY Chen; S Tamura; S Nakamura; N Onojima; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, May 2001, Peer-reviewed
      • High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes
        S Tamura; K Fujihira; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Apr. 2001, Peer-reviewed
      • Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition
        T Kimoto; S Tamura; Y Chen; K Fujihira; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Apr. 2001, Peer-reviewed
      • Recent progress in SiC epitaxial growth and device processing technology
        T Kimoto; H Yano; S Tamura; N Miyamoto; K Fujihira; Y Negoro; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Peer-reviewed
      • Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient
        O Klettke; G Pensl; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Peer-reviewed
      • Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC
        A Schoner; N Miyamoto; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Peer-reviewed
      • A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face
        H Yano; T Hirao; T Kimoto; H Matsunami
        APPLIED PHYSICS LETTERS, Jan. 2001, Peer-reviewed
      • Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces
        N Yano; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Peer-reviewed
      • Crystal growth of SiCII. Epitaxial growth
        H Matsunami; T Kimoto
        ADVANCES IN CRYSTAL GROWTH RESEARCH, 2001, Peer-reviewed
      • Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers
        T Hatayama; T Yoneda; T Nakata; M Watanabe; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Dec. 2000, Peer-reviewed
      • Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching
        S Nakamura; T Kimoto; H Matsunami; S Tanaka; N Teraguchi; A Suzuki
        APPLIED PHYSICS LETTERS, Jun. 2000, Peer-reviewed
      • High channel mobility in inversion layer of SiC MOSFETs for power switching transistors
        H Yano; T Hirao; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Apr. 2000, Peer-reviewed
      • Growth of SiC on 6H-SIC {01(1)over-bar-4} substrates by gas source molecular beam epitaxy
        S Nakamura; T Hatayama; T Kimoto; T Fuyuki; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature
        M Yoshimoto; M Goto; J Saraie; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • SiC MISFETs with MBE-grown AlN gate dielectric
        CM Zetterling; M Ostling; H Yano; T Kimoto; H Matsunami; K Linthicum; RF Davis
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy
        T Hatayama; T Fuyuki; S Nakamura; K Kurobe; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • Nuclear transmutation doping of phosphorus into 6H-SiC
        S Tamura; T Kimoto; H Matsunami; M Okada; S Kanazawa; Kimura, I
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face
        H Yano; T Hirao; T Kimoto; H Matsunami; K Asano; Y Sugawara
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • 4H-SiC (112̄0) epitaxial growth
        T. Kimoto; T. Yamamoto; Z.Y. Chen; H. Yano; H. Matsunami
        Materials Science Forum, 2000, Peer-reviewed
      • MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation
        H Yano; T Kimoto; H Matsunami; M Bassler; G Pensl
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics
        N Miyamoto; A Saitoh; T Kimoto; H Matsunami; Y Hishida; M Watanabe
        SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Peer-reviewed
      • Specular surface morphology of 4H-SiC epilayers grown on (1120) face
        ZY Chen; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Dec. 1999, Peer-reviewed
      • High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face
        H Yano; T Hirao; T Kimoto; H Matsunami; K Asano; Y Sugawara
        IEEE ELECTRON DEVICE LETTERS, Dec. 1999, Peer-reviewed
      • Nitrogen donor concentrations and its energy levels in 4H-SiC uniquely determined by a new graphical method based on Hall-effect measurement
        H Matsuura; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jul. 1999, Peer-reviewed
      • High-temperature surface structure transitions and growth of alpha-SiC (0001) in ultrahigh vacuum
        T Hatayama; S Nakamura; K Kurobe; T Kimoto; T Fuyuki; H Matsunami
        MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Jul. 1999, Peer-reviewed
      • Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes
        T Kimoto; N Miyamoto; H Matsunami
        MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Jul. 1999, Peer-reviewed
      • Oxygen in silicon carbide: shallow donors and deep accepters
        T Dalibor; H Trageser; G Pensl; T Kimoto; H Matsunami; D Nizhner; O Shigiltchoff; WJ Choyke
        MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Jul. 1999, Peer-reviewed
      • Performance limiting surface defects in SiC epitaxial p-n junction diodes
        T Kimoto; N Miyamoto; H Matsunami
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Mar. 1999, Peer-reviewed
      • Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's
        H Yano; F Katafuchi; T Kimoto; H Matsunami
        IEEE TRANSACTIONS ON ELECTRON DEVICES, Mar. 1999, Peer-reviewed
      • Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs
        H Yano; F Katafuchi; T Kimoto; H Matsunami
        COMPOUND SEMICONDUCTORS 1998, 1999, Peer-reviewed
      • Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes
        T Kimoto; O Takemura; H Matsunami; T Nakata; M Inoue
        JOURNAL OF ELECTRONIC MATERIALS, Apr. 1998, Peer-reviewed
      • Step-controlled epitaxy of SIC: high-quality homoepitaxial growth
        H Matsunami; T Kimoto
        DIAMOND AND RELATED MATERIALS, Feb. 1998, Peer-reviewed
      • Deep states in SiO2/p-type 4H-SiC interface
        H Yano; N Inoue; T Kimoto; H Matsunami
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • D-II revisited in an modern guise - 6H- and 4H-SiC
        SG Sridhara; DG Nizhner; RP Devaty; WJ Choyke; T Dalibor; G Pensl; T Kimoto
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • Optical properties of silicon carbide: Some recent developments
        RP Devaty; WJ Choyke; SG Sridhara; LL Clemen; DG Nizhner; DJ Larkin; T Troffer; G Pensl; T Kimoto; HS Kong
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence
        T Yamamoto; T Kimoto; H Matsunami
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • High-voltage (> 2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers
        T Kimoto; Q Wahab; A Ellison; U Forsberg; M Tuominen; R Yakimova; A Henry; E Janzen
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • Conductivity control of SiC by in-situ doping and ion implantation
        T Kimoto; A Itoh; N Inoue; O Takemura; T Yamamoto; T Nakajima; H Matsunami
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • Implantation of Al and B acceptors into alpha-SiC and pn junction diodes
        O Takemura; T Kimoto; H Matsunami; T Nakata; M Watanabe; M Inoue
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • Growth and characterisation of thick SiC epilayers by high temperature CVD
        A Ellison; T Kimoto; IG Ivanov; Q Wahab; A Henry; O Kordina; J Zhang; CG Hemmingsson; CY Gu; MR Leys; E Janzen
        SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, Peer-reviewed
      • A 3 kV Schottky barrier diode in 4H-SiC
        Q Wahab; T Kimoto; A Ellison; C Hallin; M Tuominen; R Yakimova; A Henry; JP Bergman; E Janzen
        APPLIED PHYSICS LETTERS, Jan. 1998, Peer-reviewed
      • Deep interface states in SiO2/p-type alpha-SiC structure
        N Inoue; T Kimoto; H Yano; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Nov. 1997, Peer-reviewed
      • Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates
        K Nishino; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Oct. 1997, Peer-reviewed
      • Reduction of double positioning twinning in 3C-SiC grown on alpha-SiC substrates
        K Nishino; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Aug. 1997, Peer-reviewed
      • Step-controlled epitaxial growth of SiC: high quality homoepitaxy
        H Matsunami; T Kimoto
        MATERIALS SCIENCE & ENGINEERING R-REPORTS, Aug. 1997, Peer-reviewed
      • Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy
        H Matsunami; T Kimoto
        DIAMOND AND RELATED MATERIALS, Aug. 1997, Peer-reviewed
      • Radiation-induced defect centers in 4H silicon carbide
        T Dalibor; G Pensl; T Kimoto; H Matsunami; S Sridhara; RP Devaty; WJ Choyke
        DIAMOND AND RELATED MATERIALS, Aug. 1997, Peer-reviewed
      • Nitrogen ion implantation into alpha-SiC epitaxial layers
        T Kimoto; N Inoue; H Matsunami
        PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jul. 1997, Peer-reviewed
      • Step-controlled epitaxial growth of high-quality SiC layers
        T Kimoto; A Itoh; H Matsunami
        PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jul. 1997, Peer-reviewed
      • Deep defect centers in silicon carbide monitored with deep level transient spectroscopy
        T Dalibor; G Pensl; H Matsunami; T Kimoto; WJ Choyke; A Schoner; N Nordell
        PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Jul. 1997, Peer-reviewed
      • Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane
        KW Lee; KS Yu; JH Boo; Y Kim; T Hatayama; T Kimoto; H Matsunami
        JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Apr. 1997, Peer-reviewed
      • Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001}
        T Kimoto; A Itoh; H Matsunami; T Okano
        JOURNAL OF APPLIED PHYSICS, Apr. 1997, Peer-reviewed
      • High quantum-efficiency 4H-SiC UV photodiode
        KS Park; T Kimoto; H Matsunami
        JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Feb. 1997, Peer-reviewed
      • Formation of semi-insulating 6H-SiC layers by vanadium ion implantations
        T Kimoto; T Nakajima; H Matsunami; T Nakata; M Inoue
        APPLIED PHYSICS LETTERS, Aug. 1996, Peer-reviewed
      • Exciton-related photoluminescence in 4H-SiC grown by step-controlled epitaxy
        A Itoh; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Aug. 1996, Peer-reviewed
      • Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance
        S Kobayashi; T Kimoto; H Matsunami
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jun. 1996, Peer-reviewed
      • Aluminum and boron ion implantations into 6H-SiC epilayers
        T Kimoto; A Itoh; H Matsunami; T Nakata; M Watanabe
        JOURNAL OF ELECTRONIC MATERIALS, May 1996, Peer-reviewed
      • Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
        A Itoh; T Kimoto; H Matsunami
        IEEE ELECTRON DEVICE LETTERS, Mar. 1996, Peer-reviewed
      • Thermal oxidation of B-doped p-type 6H-SiC and fabrication of MOS diodes
        H Akita; T Kimoto; N Inoue; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, Peer-reviewed
      • Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy
        T Kimoto; A Itoh; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, Peer-reviewed
      • Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method
        K Nishino; T Kimoto; H Matsunami
        SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, Peer-reviewed
      • NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION
        T KIMOTO; A ITOH; H MATSUNAMI; S SRIDHARA; LL CLEMEN; RP DEVATY; WJ CHOYKE; T DALIBOR; C PEPPERMULLER; G PENSL
        APPLIED PHYSICS LETTERS, Nov. 1995, Peer-reviewed
      • INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC
        T KIMOTO; A ITOH; H MATSUNAMI
        APPLIED PHYSICS LETTERS, Oct. 1995, Peer-reviewed
      • PHOTOLUMINESCENCE OF HOMOEPITAXIAL 3C-SIC ON SUBLIMATION-GROWN 3C-SIC SUBSTRATES
        K NISHINO; T KIMOTO; H MATSUNAMI
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Sep. 1995, Peer-reviewed
      • SURFACE-DIFFUSION LENGTHS OF ADATOMS ON 6H-SIC(0001) FACES IN CHEMICAL-VAPOR-DEPOSITION OF SIC
        T KIMOTO; H MATSUNAMI
        JOURNAL OF APPLIED PHYSICS, Sep. 1995, Peer-reviewed
      • HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
        A ITOH; T KIMOTO; H MATSUNAMI
        IEEE ELECTRON DEVICE LETTERS, Jun. 1995, Peer-reviewed
      • NITROGEN ION-IMPLANTATION INTO 6H-SIC AND APPLICATION TO HIGH-TEMPERATURE, RADIATION-HARD DIODES
        S YAGUCHI; T KIMOTO; N OHYAMA; H MATSUNAMI
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jun. 1995, Peer-reviewed
      • STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES
        T KIMOTO; A ITOH; H MATSUNAMI
        APPLIED PHYSICS LETTERS, Jun. 1995, Peer-reviewed
      • THE EFFECTS OF N+ DOSE IN IMPLANTATION INTO 6H-SIC EPILAYERS
        T KIMOTO; A ITOH; H MATSUNAMI; T NAKATA; M WATANABE
        JOURNAL OF ELECTRONIC MATERIALS, Apr. 1995, Peer-reviewed
      • PROGRESS IN SEMICONDUCTOR SIC AND ION IMPLANTATION
        H MATSUNAMI; T KIMOTO
        REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 1995, Peer-reviewed
      • NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES
        T KIMOTO; H MATSUNAMI
        JOURNAL OF APPLIED PHYSICS, Dec. 1994, Peer-reviewed
      • HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY
        A ITOH; H AKITA; T KIMOTO; H MATSUNAMI
        APPLIED PHYSICS LETTERS, Sep. 1994, Peer-reviewed
      • DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS
        S JANG; T KIMOTO; H MATSUNAMI
        APPLIED PHYSICS LETTERS, Aug. 1994, Peer-reviewed
      • TERRACE GROWTH AND POLYTYPE DEVELOPMENT IN EPITAXIAL BETA-SIC FILMS ON ALPHA-SIC (6H AND 15R) SUBSTRATES
        FR CHIEN; NUTT, SR; WS YOO; T KIMOTO; H MATSUNAMI
        JOURNAL OF MATERIALS RESEARCH, Apr. 1994, Peer-reviewed
      • INTERFACE STRUCTURES OF EPITAXIAL BETA-SIC ON ALPHA-SIC SUBSTRATES
        FR CHIEN; NUTT, SR; WS YOO; T KIMOTO; H MATSUNAMI
        JOURNAL OF CRYSTAL GROWTH, Mar. 1994, Peer-reviewed
      • SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES
        T KIMOTO; H MATSUNAMI
        JOURNAL OF APPLIED PHYSICS, Jan. 1994, Peer-reviewed
      • Development of Contact Materials for Semiconductor Devices. Silicon Carbide Semiconductors, Devices, and Contact Materials.
        Matsunami Hiroyuki; Kimoto Tsunenobu
        Bulletin of the Japan Institute of Metals, 1994
      • HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES
        T KIMOTO; T URUSHIDANI; S KOBAYASHI; H MATSUNAMI
        IEEE ELECTRON DEVICE LETTERS, Dec. 1993, Peer-reviewed
      • 4H-SIC/6H-SIC INTERFACE STRUCTURES STUDIED BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY
        H IWASAKI; S INOUE; T YOSHINOBU; M TARUTANI; Y TAKAI; R SHIMIZU; A ITO; T KIMOTO; H MATSUNAMI
        APPLIED PHYSICS LETTERS, Nov. 1993, Peer-reviewed
      • STEP-CONTROLLED EPITAXIAL-GROWTH OF 4H-SIC AND DOPING OF GA AS A BLUE LUMINESCENT CENTER
        T KIMOTO; A YAMASHITA; A ITOH; H MATSUNAMI
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Mar. 1993, Peer-reviewed
      • GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY
        T KIMOTO; H NISHINO; WS YOO; H MATSUNAMI
        JOURNAL OF APPLIED PHYSICS, Jan. 1993, Peer-reviewed
      • HOMOEPITAXIAL CHEMICAL VAPOR-DEPOSITION OF 6H-SIC AT LOW-TEMPERATURES ON (01(1)OVER-BAR-4) SUBSTRATES
        A YAMASHITA; WS YOO; T KIMOTO; H MATSUNAMI
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Nov. 1992, Peer-reviewed
      • Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method.
        KIMOTO T; NISHINO H; YAMASHITA A; YOO W S; MATSUNAMI H
        Amorph Cryst Silicon Carbide 4, 1992, Peer-reviewed
      • Epitaxial growth of β-SiC on α-SiC substrates by chemical vapor deposition
        Katsushi Nishino; Tsunenobu Kimoto; Hiroyuki Matsunami
        Memoirs of the Faculty of Engineering, Kyoto University, 1992, Peer-reviewed
      • BULK CRYSTAL-GROWTH OF 6H-SIC ON POLYTYPE-CONTROLLED SUBSTRATES THROUGH VAPOR-PHASE AND CHARACTERIZATION
        WS YOO; A YAMASHITA; T KIMOTO; H MATSUNAMI
        JOURNAL OF CRYSTAL GROWTH, Dec. 1991, Peer-reviewed
      • PHOTOLUMINESCENCE OF TI DOPED 6H-SIC GROWN BY VAPOR-PHASE EPITAXY
        T KIMOTO; H NISHINO; T UEDA; A YAMASHITA; WS YOO; H MATSUNAMI
        JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Feb. 1991, Peer-reviewed
      • DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT
        T FUYUKI; KY DU; S OKAMOTO; S YASUDA; T KIMOTO; M YOSHIMOTO; H MATSUNAMI
        JOURNAL OF APPLIED PHYSICS, Sep. 1988, Peer-reviewed
      • Solubility and diffusion of chromium in 4H-SiC
        Danno Katsunori; Saito Makoto; Seki Akinori; Sato Kazuaki; Bessho Takeshi; Kimoto Tsunenobu
        Appl. Phys. Express, 06 May 2016

      Misc.

      • Carrier lifetime and breakdown phenomena in SiC power device material
        T. Kimoto; H. Niwa; T. Okuda; E. Saito; Y. Zhao; S. Asada; J. Suda
        Journal of Physics D: Applied Physics, 30 Jul. 2018
      • High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N_2O Annealing
        KIMOTO Tsunenobu; KAWANO Hiroaki; NOBORIO Masato; SUDA Jun
        Extended abstracts of the ... Conference on Solid State Devices and Materials, 13 Sep. 2005
      • High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
        MATSUNAMI Hiroyuki; KIMOTO Tsunenobu
        Extended abstracts of the ... Conference on Solid State Devices and Materials, 20 Sep. 1999
      • High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
        YANO Hiroshi; HIRAO Taichi; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Extended abstracts of the ... Conference on Solid State Devices and Materials, 20 Sep. 1999
      • Ion Implantation into SiC epilayers and Device Application
        TAKEMURA O.; INOUE N.; ITOH A.; KIMOTO T.; MATSUNAMI H.
        電気学会研究会資料. PS, 物理センサ研究会, 11 Nov. 1996
      • 半導体シリコンカーバイドの結晶成長と物性に見られる異方性 (特集 異方性工学のすすめ(1)構造と異方性)
        松波 弘之; 木本 恒暢
        マテリアルインテグレ-ション, Jan. 2004
      • MOS界面の異方性を活用した高耐圧SiCトランジスタ (特集 異方性工学のすすめ(3)プロセスと異方性)
        木本 恒暢; 松波 弘之
        マテリアルインテグレ-ション, Feb. 2005
      • Investigation of mobility degradation in ultra-thin silicon-on-insulator by Hall effect measurements
        YOSHIOKA Hironori; KIMOTO Tsunenobu
        IEICE technical report, 18 Jun. 2007
      • 22pYH-1 High-density electron-hole droplets in SiC
        Hirano D.; TayagakiA T.; Kimoto T.; Kanemitsu Y.
        Meeting abstracts of the Physical Society of Japan, 25 Aug. 2008
      • Bevel mesa combined with implanted junction termination structure for 10kV SiC PiN diodes
        HIYOSHI Toru; HORI Tsutomu; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 07 Dec. 2007
      • Electrical conduction characteristics of NiO thin films for ReRAM
        SUZUKI Ryota; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 07 Dec. 2007
      • Novel Semiconductor Material for Advanced Low-Loss Power Devices
        KIMOTO Tsunenobu
        Journal of the Japan Society of Mechanical Engineers, 05 Mar. 2007
      • Lateral High-Voltage SiC MOSFETs with Low On-Resistance by Using Double RESURF Structure
        NOBORIO Masato; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 07 Dec. 2006
      • Low-dislocation-density nonpolar 4H-AlN grown on 4H-SiC (1120) substrates
        HORITA Masahiro; SUDA Jun; KIMOTO Tsunenobu
        Journal of the Japanese Association of Crystal Growth, 30 Nov. 2006
      • Formation of Deep pn Junctions by High-Energy Al and B Ion Implantations into SiC
        KIMOTO Tsunenobu; MIYAMOTO Nao; MATSUNAMI Hiroyuki
        The Transactions of the Institute of Electrical Engineers of Japan. C, 01 Jan. 2002
      • High-quality AlN growth by interface modification and growth of AlN on SiC with novel crystal face
        SUDA Jun; ONOJIMA Norio; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Journal of the Japanese Association of Crystal Growth, 05 Jul. 2003
      • Recent Progress in SiC Single Crystal Growth
        MATSUNAMI Hiroyuki; KIMOTO Tsunenobu
        Journal of the Japanese Association of Crystal Growth, 25 Oct. 2000
      • Step-Controlled Epitaxial Growth of High-Quality SiC
        KIMOTO T.; MATSUNAMI H.
        Journal of the Japanese Association of Crystal Growth, Jul. 1998
      • Substrate Orientaiton Dependence in Homoepitaxial Growth of SiC
        KIMOTO T.; YAMAMOTO T.; MATSUNAMI H.
        Journal of the Japanese Association of Crystal Growth, Jul. 1998
      • Step-Controlled Epitaxial Growth of SiC and Step Dynamics
        KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Journal of the Japanese Association of Crystal Growth, 25 Mar. 1996
      • Step-Controlled Epitaxy of SiC Polytypes and Step Dynamics
        KIMOTO Tsunenobu
        Journal of the Japanese Association of Crystal Growth, 10 Jul. 1995
      • 28aB10 SiC結晶成長における核発生とステップ・ダイナミクス(基礎V)
        木本 恒暢; 松波 弘之
        日本結晶成長学会誌, 10 Jul. 1993
      • 27pC9 ステップ制御エピタキシーによるSiCの単結晶成長(気相成長IV)
        松波 弘之; 木本 恒暢
        日本結晶成長学会誌, 10 Jul. 1993
      • 28aB9 微傾斜SiC{0001}面上成長モデル(基礎V)
        木本 恒暢; 松波 弘之
        日本結晶成長学会誌, 10 Jul. 1993
      • 27pC8 Sicステップ制御エピタキシーの律速過程(気相成長IV)
        木本 恒暢; 西野 弘師; 松波 弘之
        日本結晶成長学会誌, 10 Jul. 1993
      • Silicide, Metallization and Silicon Carbide(ICVGE-7(The Seventh International Conference on Vapour Growth and Epitaxy))
        松波 弘之; 木本 恒暢
        Journal of the Japanese Association of Crystal Growth, 15 Mar. 1992
      • Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor
        AMARI Koichi; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 05 Oct. 2006
      • Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
        ONOJIMA Norio; HIGASHIWAKI Masataka; SUDA Jun; KIMOTO Tsunenobu; MIMURA Takashi; MATSUI Toshiaki
        IEICE technical report, 28 Sep. 2006
      • 高反転層チャネル移動度を有するプレーナ型4H-SiC MOSFETs (特集 ハードエレクトロニクス--超低損失パワーデバイス技術) -- (MOSデバイスプロセス)
        矢野 裕司; 平尾 太一; 木本 恒暢
        FEDジャ-ナル, 2000
      • High-Voltage 4H-SiC pn Diodes Fabricated by p-Type Ion Implantation
        NEGORO Yuuki; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        The Transactions of the Institute of Electronics,Information and Communication Engineers. C, 01 Apr. 2003
      • Recent Progress in Epitaxial Growth of SiC for Power Devices
        KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        The Transactions of the Institute of Electronics,Information and Communication Engineers. C, 01 Apr. 2003
      • Recent Progress in Epitaxial Growth of SiC for Power Devices
        KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        IEICE transactions on electronics, 01 Apr. 2003
      • Present Status and Future Prospects of SiC Crystal Growth and Device Technology
        MATSUNAMI Hiroyuki; KIMOTO Tsunenobu
        The Transactions of the Institute of Electronics,Information and Communication Engineers. C, 01 Jun. 2002
      • Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
        KIMOTO Tsunenobu; YANO Hiroshi; MATSUNAMI Hiroyuki
        Extended abstracts of the ... Conference on Solid State Devices and Materials, 28 Aug. 2000
      • Dose Optimization of Lateral SiC MOSFETs with Multi-RESURF Structure
        NOBORIO Masato; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 14 Dec. 2005
      • Fabrication of Short-Channel 4H-SiC MOSFETs and Theoretical Analysis of Short-Channel Effects
        NOBORIO Masato; KANZAKI Yosuke; SUDA Jun; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 16 Dec. 2004
      • Dose Designing for 4H-SiC RESRUF MOSFETs
        KAWANO Hiroaki; KIMOTO Tsunenobu; SUDA Jun; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 16 Dec. 2004
      • Design and Fabrication of SiC RESURF MOSFETs
        KOSUGI Hajime; HIRAO Taichi; YANO Hiroshi; SUDA Jun; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 24 Jun. 2002
      • Formation of Ultra-thin Silicon Dioxide Films at Low Temperatures using Remote Plasma Oxidation and Application for Gate Insulators
        SUN Y. H.; IIDA T.; KIMOTO T.; MATSUNAMI H.
        Technical report of IEICE. SDM, 24 Jun. 2002
      • Fabrication of SiC Super Junction Structure and Analysis of Electrical Characteristics for Power Devices
        MIURA Mineo; NAKAMURA Shun-ichi; KIMOTO Tsunenobu; SUDA Jun; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 13 Dec. 2001
      • Aluminum and Phosphorus Implantations into 4H-SiC and Fabrication of High-Voltage SiC pn Diodes
        NEGORO Yuuki; MIYAMOTO Nao; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 14 Dec. 2000
      • Determination of Donor Densities and Energy Levels in SiC by a New Graphical Method Based on the Temperature Dependence of Majority-Carrier Concentration
        MATSUURA Hideharu; KIMOTO Tunenobu; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 10 Dec. 1998
      • Growth of High-Quality 6H-,4H-SiC Crystals and Application to High- Power Schottky Barrier Diodes
        Itoh Akira; Akita Hironobu; Takemoto Daisaku; Urushidani Tanio; Kimoto Tsunenobu; Matsunami Hiroyuki
        Technical report of IEICE. SDM, 24 Nov. 1994
      • Characteristics of SiO_2 films formed at low temperature by remote plasma oxidation
        IIDA T.; KANEHIRO M.; KIMOTO T.; MATSUNAMI H.
        IEICE technical report. Electron devices, 28 Jun. 2001
      • A 4kV SiC Epitaxial PN Junction Diode with a Low On-resistance
        FUJIHIRA K.; TAMURA S.; KIMOTO T.; MATSUNAMI H.
        IEICE technical report. Electron devices, 23 Jun. 2000
      • Low-temperature Formation of Ultra-thin SiO_2 Films Using Oxygen Radicals and the Application for MOSFET Gate Insulator
        KANEHIRO M.; UEDA Y.; KIMOTO T.; MATSUNAMI H.
        IEICE technical report. Electron devices, 21 Jun. 2000
      • Epitaxial Growth of High-Purity SiC and Application to Power Devices
        KIMOTO Tsunenobu; YANO Hiroshi; TAMURA Satoshi; MIYAMOTO Nao; FUJIHIRA Keiko; MATSUNAMI Hiroyuki
        IEICE technical report. Electron devices, 11 May 2000
      • Ultra-thin Silicon Dioxide for MOSFET Gate Formed at Low Temperatures Utilizing Activated Oxygen
        UEDA Y.; MORIIZUMI K.; SAHARA R.; KIMOTO T.; FUYUKI T.; MATSUNAMI H.
        IEICE technical report. Electron devices, 22 Jul. 1999
      • Electrical Characteristics of GaN/SiC Heterojunction diodes by molecular-beam epitaxy
        NAKANO Yuki; SUDA Jun; KIMOTO Tsunenobu
        Technical report of IEICE. LQE, 21 Oct. 2004
      • Present Status and Future Prospects of SiC Power Devices
        KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 24 Jun. 2004
      • 4H-SiC MOSFETs with a Novel Channel Structure (SC-MOSFET)
        KAIDO Junji; KIMOTO Tsunenobu; SUDA Jun; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 12 Dec. 2003
      • Design and Fabrication of High-Voltage SiC RESURF MOSFETs
        KIMOTO Tsunenobu; KOSUGI Hajime; KANZAKI Yohsuke; SUDA Jun; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 12 Dec. 2003
      • Formation of High-Quality Silicon Dioxide Films by Plasma Oxidation
        SUN Yunhua; KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        Technical report of IEICE. SDM, 13 Dec. 2002
      • Detailed Analysis of Metal/4H-SiC Schottky Barrier Height
        TAKEMURA O.; ITOH A.; KIMOTO T.; MATSUNAMI H.
        Technical report of IEICE. SDM, 08 Dec. 1995
      • Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure
        NANEN Yuichiro; YOSHIOKA Hironori; NOBORIO Masato; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 28 Nov. 2008
      • Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM
        NISHI Yusuke; KIMOTO Tsunenobu
        IEICE technical report, 28 Nov. 2008
      • 実用化に向けて加速するSiC半導体の周辺技術開発と次世代フェーズへの取り組み 16kV級超高耐圧SiC IE-IGBTの開発
        米澤喜幸; 水島智教; 竹中研介; 藤澤弘幸; 岡本光央; 吉川満; 松永慎一郎; 加藤智久; 岡本大; 原田信介; 田中保宜; 熊谷直樹; 出口忠義; 宮島將昭; 木村浩; 武井学; 大月章宏; 福田憲司; 奥村元; 木本恒暢
        工業材料, 2014
      • Determination of impact ionization coefficients in SiC for high-voltage power devices
        木本 恒暢; 丹羽 弘樹; 須田 淳
        応用物理, May 2017
      • Distribution of Forming Characteristics in NiO-based ReRAM
        西 佑介; 木本 恒暢
        電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 14 Dec. 2015
      • Step-controlled epitaxy in semiconductor SiC polytypes.
        KIMOTO Tsunenobu; MATSUNAMI Hiroyuki
        應用物理, 10 Jul. 1995
      • Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells
        Yusuke Nishi; Hiroki Sasakura; Tsunenobu Kimoto
        JOURNAL OF MATERIALS RESEARCH, Jul. 2017
      • Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation
        Tanaka H; Suda J; Kimoto T
        International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017, Peer-reviewed
      • Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation
        Tanaka H; Suda J; Kimoto T
        Journal of Physics: Conference Series, 2017, Peer-reviewed
      • Suppression of Etch-Pit Formation by Controlling Etching Mode in Electrochemical Etching of p-type 4H-SiC
        榎薗 太郎; 木本 恒暢; 須田 淳
        電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016
      • Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
        鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳
        電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016
      • Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
        TANAKA Hajime; MORI Seigo; MORIOKA Naoya; SUDA Jun; KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 12 Dec. 2014
      • Temperature Dependence of Current Gain in 4H-SiC BJTs
        ASADA Satoshi; OKUDA Takafumi; KIMOTO Tsunenobu; SUDA Jun
        Technical report of IEICE. SDM, 12 Dec. 2014
      • Resistive switching characteristics of NiO-based ReRAM after semi-forming process
        SASAKURA Hiroki; NISHI Yusuke; IWATA Tatsuya; KIMOTO Tsunenobu
        IEICE technical report. Electronic information displays, 12 Dec. 2014
      • NiO薄膜を用いた抵抗変化型メモリにおける2つのモードを有するフォーミング
        篠倉弘樹; 西佑介; 岩田達哉; 木本恒暢
        応用物理学会秋季学術講演会講演予稿集(CD-ROM), 01 Sep. 2014
      • 反応性スパッタNiO膜の電気特性に膜の微細構造が及ぼす影響
        岩田達哉; 西佑介; 木本恒暢
        応用物理学会春季学術講演会講演予稿集(CD-ROM), 03 Mar. 2014
      • NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈
        岩田達哉; 西佑介; 篠倉弘樹; 木本恒暢
        応用物理学会春季学術講演会講演予稿集(CD-ROM), 03 Mar. 2014
      • Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
        TANAKA Hajime; MORI Seigo; MORIOKA Naoya; SUDA Jun; KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 13 Dec. 2013
      • Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
        NAKAZAWA Seiya; NANEN Yuichiro; SUDA Jun; KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 13 Dec. 2013
      • NiO薄膜の膜質がPt/NiO/Pt抵抗変化素子のフォーミング電圧に及ぼす影響
        岩田達哉; 西佑介; 木本恒暢
        応用物理学会秋季学術講演会講演予稿集(CD-ROM), 31 Aug. 2013
      • Pt/NiO/Pt積層構造におけるフォーミング特性分布
        西佑介; 岩田達哉; 木本恒暢
        応用物理学会春季学術講演会講演予稿集(CD-ROM), 11 Mar. 2013
      • Physics of SiC MOS interface and development of trench MOSFETs
        Tsunenobu Kimoto; Hironori Yoshioka; Takashi Nakamura
        1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, 2013, Peer-reviewed
      • Short-Circuit Tests on SiC Power MOSFETs
        Alberto Castellazzi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara
        2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013), 2013, Peer-reviewed
      • Effects of electrode materials on resistive switching characteristics of Metal/TiO_2/Metal stack structures
        OKIMOTO Naoki; IWATA Tatsuya; NISHI Yusuke; KIMOTO Tsunenobu
        Technical report of IEICE. SDM, 07 Dec. 2012
      • NiO薄膜を用いたReRAMにおけるフォーミング特性の分布
        堀江大典; 西佑介; 岩田達哉; 木本恒暢
        応用物理学会学術講演会講演予稿集(CD-ROM), 27 Aug. 2012
      • CT-2-3 SiC Power Device Technology
        Suda Jun; Kimoto Tsunenobu
        Proceedings of the IEICE General Conference, 06 Mar. 2012
      • Pt/NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価
        岩田達哉; 西佑介; 木本恒暢
        応用物理学関係連合講演会講演予稿集(CD-ROM), 29 Feb. 2012
      • Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存
        西佑介; 堀江大典; 岩田達哉; 木本恒暢
        応用物理学関係連合講演会講演予稿集(CD-ROM), 29 Feb. 2012
      • Time-dependent forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory
        Yusuke Nishi; Tatsuya Iwata; Daisuke Horie; Tsunenobu Kimoto
        Materials Research Society Symposium Proceedings, 2012, Peer-reviewed
      • Identification of the location of conductive filaments formed in Pt/NiO/Pt resistive switching cells and investigation on their properties
        Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto
        Materials Research Society Symposium Proceedings, 2012, Peer-reviewed
      • Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs
        Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto
        2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012, Peer-reviewed
      • Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures
        Hiroki Niwa; Gan Feng; Jun Suda; Tsunenobu Kimoto
        2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012, Peer-reviewed
      • AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular-Beam Epitaxy
        KIKUCHI Ryosuke; OKUMURA Hironori; KIMOTO Tsunenobu; SUDA Jun
        IEICE technical report. Component parts and materials, 10 Nov. 2011
      • Current Transport Characteristics of Quasi-Al[x]Ga1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
        OKUDA Takafumi; MIYAKE Hiroki; KIMOTO Tsunenobu; SUDA Jun
        IEICE technical report. Component parts and materials, 10 Nov. 2011
      • 25aHA-6 Photoluminescence dynamics of high-density electron-hole droplets in SiC
        Hirano D.; Kimoto T.; Kanemitsu Y.
        Meeting abstracts of the Physical Society of Japan, 03 Mar. 2011
      • Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        Proceedings of SPIE - The International Society for Optical Engineering, 2011, Peer-reviewed
      • Thermo-optic Coefficients of SiC, GaN, and AlN up to 512 degrees C from Infrared to Ultraviolet Region for Tunable Filter Applications
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 2011, Peer-reviewed
      • Fabrication of Electrostatic-actuated Single-crystalline 4H-SiC Bridge Structures by Photoelectrochemical Etching
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 2011, Peer-reviewed
      • Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications
        Naoki Watanabe; Tsunenobu Kimoto; Jun Suda
        Proceedings of SPIE - The International Society for Optical Engineering, 2011, Peer-reviewed
      • 4H-SiC Bipolar Junction Transistors with Record Current Gains of 257 on (0001) and 335 on (000-1)
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, Peer-reviewed
      • Fundamental Research of Nonvolatile Memory utilizing Resistive Switching Property of Nickel Oxide
        NISHI YUSUKE; IWATA TATSUYA; KIMOTO TSUNENOBU
        電気材料技術雑誌, 10 Dec. 2010
      • Wide-bandgap Semiconductor Devices using Group-III Nitride/SiC Heterointerface
        SUDA Jun; MIYAKE Hiroki; KIMOTO Tsunenobu
        J. Surf. Sci. Soc. Jpn., 10 Dec. 2010, Peer-reviewed
      • Effects of thermal treatment in vacuum on the electrical characteristics of Pt/NiO/Pt stack structures for ReRAM
        IWATA Tatsuya; NISHI Yusuke; KIMOTO Tsunenobu
        IEICE technical report, 10 Dec. 2010
      • Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoretical Calculations
        YOSHIOKA Hironori; MORIOKA Naoya; SUDA Jun; KIMOTO Tsunenobu
        IEICE technical report, 10 Dec. 2010
      • ReRAM用NiO薄膜における酸素組成と電気的特性との相関
        西佑介; 岩田達哉; 木本恒暢
        応用物理学会学術講演会講演予稿集(CD-ROM), 30 Aug. 2010
      • 真空アニールによるPt/NiO/Pt積層構造素子の電気的特性変化
        岩田達哉; 西佑介; 木本恒暢
        応用物理学会学術講演会講演予稿集(CD-ROM), 30 Aug. 2010
      • 光電気化学エッチングにより作製した静電駆動単結晶SiCブリッジ構造
        渡辺直樹; 木本恒暢; 須田淳
        電気学会マイクロマシン・センサシステム研究会資料, 17 Jun. 2010
      • Non-destructive detection and visualization of extended defects in 4H-SiC epilayers
        Gan Feng; Jun Suda; Tsunenobu Kimoto
        B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 2010, Peer-reviewed
      • Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays
        Junzo Ishikawa; Yasuhito Gotoh; Mitsuaki Takeuchi; Shuhei Taguchi; Dan Nicolaescu; Hiroshi Tsuji; Tsunenobu Kimoto; Shigeki Sakai
        ION IMPLANTATION TECHNOLOGY 2010, 2010, Peer-reviewed
      • Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires
        Naoya Moriokaa; Hironori Yoshioka; Jun Suda; Tsunenobu Kimoto
        2010 Silicon Nanoelectronics Workshop, SNW 2010, 2010, Peer-reviewed
      • SiC Technologies for Future Energy Electronics
        Tsunenobu Kimoto
        2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, Peer-reviewed
      • Prospects and recent progress of SiC power semiconductor devices
        木本 恒暢
        Energy, 2010
      • Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter
        Hiroki Miyake; Tsunenobu Kimoto; Jun Suda
        Device Research Conference - Conference Digest, DRC, 11 Dec. 2009, Peer-reviewed
      • Characterization of defects in NiO thin films for ReRAM
        NISHI Yusuke; IWATA Tatsuya; KIMOTO Tsunenobu
        IEICE technical report, 27 Nov. 2009, Peer-reviewed
      • Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM
        IWATA Tatsuya; NISHI Yusuke; KIMOTO Tsunenobu
        IEICE technical report, 27 Nov. 2009, Peer-reviewed
      • 次世代パワー半導体SiCの特徴と将来展望 (特集 時代が求める「シリコンカーバイド」--応用編)
        木本 恒暢
        工業材料, Oct. 2009, Peer-reviewed
      • 高純度・高品質SiCを用いた耐圧10kVのPiNダイオード (特集 時代が求める「シリコンカーバイド」--応用編)
        木本 恒暢
        工業材料, Oct. 2009, Peer-reviewed
      • NiOを用いたReRAMの高温における抵抗スイッチング特性
        岩田達哉; 西佑介; 木本恒暢
        応用物理学会学術講演会講演予稿集, 08 Sep. 2009
      • その場測定による水素雰囲気下6H‐SiC表面反応メカニズムの検討
        石井泰寛; 秋山和博; 阿部創平; 村上尚; 熊谷義直; 奥村宏典; 木本恒暢; 須田淳; 纐纈明伯
        応用物理学関係連合講演会講演予稿集, 30 Mar. 2009
      • 27aVA-9 Photoluminescence dynamics in highly excited SiC
        Hirano D.; Tayagaki T.; Kimoto T.; Kanemitsu Y.
        Meeting abstracts of the Physical Society of Japan, 03 Mar. 2009, Peer-reviewed
      • SiC(0001)Si面‐H2系における表面反応速度のその場測定
        石井泰寛; 秋山和博; 村上尚; 熊谷義直; 奥村宏典; 須田淳; 木本恒暢; 纐纈明伯
        応用物理学会学術講演会講演予稿集, 02 Sep. 2008
      • In situグラビメトリック法による6H‐SiC(0001)Si面の表面分解速度の測定
        秋山和博; 石井泰寛; 村上尚; 熊谷義直; 奥村宏典; 須田淳; 木本恒暢; 纐纈明伯
        応用物理学会学術講演会講演予稿集, 02 Sep. 2008
      • In situ monitoring of the reaction mechanisms on surfaces of {0001} 6H-SiC in H2 ambient
        秋山和博; 石井泰寛; 村上尚; 熊谷義直; 奥村宏典; 木本恒暢; 須田淳; 纐纈明伯
        結晶成長国内会議予稿集, 2008
      • Fabrication and electronic characteristics of silicon nanowire mosfets
        H. Yoshioka; Y. Nanen; J. Suda; T. Kimoto
        Materials Research Society Symposium Proceedings, 2008, Peer-reviewed
      • Temperature dependence of electrical properties of NiO thin films for Resistive Random Access Memory
        Ryota Suzuki; Jun Suda; Tsunenobu Kimoto
        MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, 2008, Peer-reviewed
      • 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose
        Masato Noborio; Jun Suda; Tsunenobu Kimoto
        ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2008, Peer-reviewed
      • Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)
        Tsutomu Hori; Katsunori Danno; Tsunenobu Kimoto
        JOURNAL OF CRYSTAL GROWTH, Oct. 2007
      • Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation
        A. Oowada; M. Takeuchi; Y. Sakai; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto
        2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007, Peer-reviewed
      • Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device
        M. Takeuchi; T. Kojima; A. Oowada; Y. Gotoh; M. Nagao; H. Tsuji; J. IShikawa; S. Sakai; T. Kimoto
        2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007, Peer-reviewed
      • A study on SiC devices in synchronous rectification of DC-DC converter
        Tsuyoshi Funaki; Masashi Matsushita; Masashi Sasagawa; Tsunenobu Kimoto; Takashi Hikihara
        APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2, 2007, Peer-reviewed
      • Low-dislocation-density nonpolar AlN grown on 4H-SiC (11-20) substrates
        J. Suda; M. Horita; T. Kimoto
        Materials Research Society Symposium Proceedings, 2006, Peer-reviewed
      • Deep levels in as-grown and electron-irradiated p-type 4H-SiC
        Katsunori Danno; Tsunenobu Kimoto
        SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, Peer-reviewed
      • Characterization of SiC diodes in extremely high temperature ambient
        T Funaki; AS Kashyap; HA Mantooth; JC Balda; FD Barlow; T Kimoto; T Hikihara
        APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2006, Peer-reviewed
      • Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy
        Rob Armitage; Masahiro Horita; Tsunenobu Kimoto
        GaN, AIN, InN and Related Materials, 2006, Peer-reviewed
      • Characterization of SiCHET for temperature dependent device modeling
        T. Funaki; A. S. Kashyap; H. A. Mantooth; J. C. Balda; F. D. Barlow; T. Kimoto; T. Hikihara
        2006 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-7, 2006, Peer-reviewed
      • Anisotropic etching of single crystalline SiC using molten KOH for SiC bulk micromachining
        Katsuhiko Fukunaga; Jun Suda; Tsunenobu Kimoto
        MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XI, 2006, Peer-reviewed
      • SiC device process technology
        KIMOTO Tsunenobu
        應用物理, 10 Mar. 2005
      • Epitaxial Growth of SiC by CVD and Impurity Doping
        KIMOTO Tsunenobu
        Ceramics Japan, 01 Jan. 2005
      • Influence of substrate misorientation angle and direction in growth of GaN on off-axis SiC(0001)
        J Suda; Y Nakano; T Kimoto
        GAN, AIN, INN AND THEIR ALLOYS, 2005, Peer-reviewed
      • Power conversion with SiC devices at extremely high ambient temperatures
        T Funaki; JC Balda; J Junghans; AS Kashyap; FD Barlow; HA Mantooth; T Kimoto; T Hikihara
        2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3, 2005, Peer-reviewed
      • Molecular-beam epitaxy of AIN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface
        N Onojima; J Kaido; J Suda; T Kimoto
        Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, Peer-reviewed
      • Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates
        R Armitage; J Suda; T Kimoto
        Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, Peer-reviewed
      • Direct growth of GaN on off-oriented SiC (0001) by molecularbeam epitaxy for GaN/SiC heterojunction bipolar transistor
        Y Nakano; J Suda; T Kimoto
        PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, Peer-reviewed
      • Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layers
        R. Armitage; J. Suda; T. Kimoto
        Proceedings - Electrochemical Society, 2004, Peer-reviewed
      • Aluminum-ion implantation into 4H-SiC (11-20) and (0001)
        Y Negoro; T Kimoto; H Matsunami
        SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, Peer-reviewed
      • MOS interface properties and MOSFET performance on 4H-SiC{0011} and non-basal faces processed by N2O oxidation
        T Kimoto; Y Kanzaki; M Noborio; H Kawano; H Matsunami
        SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, Peer-reviewed
      • Surface control of ZrB2 (0001) substrate for molecular-beam epitaxy of GaN
        J Suda; H Yamashita; R Armitage; T Kimoto; H Matsunami
        GAN AND RELATED ALLOYS - 2003, 2003, Peer-reviewed
      • Either step-flow or layer-by-layer growth for AIN on SiC (0001) substrates
        J Suda; N Onojima; T Kimoto; H Matsunami
        GAN AND RELATED ALLOYS - 2003, 2003, Peer-reviewed
      • Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy
        N Onojima; J Suda; T Kimoto; H Matsunami
        5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, Peer-reviewed
      • Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy
        N Onojima; J Suda; T Kimoto; H Matsunami
        5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, Peer-reviewed
      • SiO2/SiC interface properties on various surface orientations
        H. Yano; T. Hirao; T. Kimoto; H. Matsunami
        Materials Research Society Symposium - Proceedings, 2002, Peer-reviewed
      • Epitaxial growth and characterization of 4H-SiC(11-20) and (03-38)
        T. Kimoto; K. Hashimoto; K. Fujihira; K. Danno; S. Nakamura; Y. Negoro; H. Matsunami
        Materials Research Society Symposium - Proceedings, 2002, Peer-reviewed
      • Four current examples of characterization of silicon carbide
        S. Bai; Y. Ke; Y. Shishkin; O. Shigiltchoff; R.P. Devaty; W.J. Choyke; D. Strauch; B. Stojetz; B. Dorner; D. Hobgood; J. Serrano; M. Cardona; H. Nagasawa; T. Kimoto; L.M. Porter
        Materials Research Society Symposium - Proceedings, 2002, Peer-reviewed
      • Epitaxial growth of SiC on non-typical orientations and MOS interfaces
        H. Matsunami; T. Kimoto; H. Yano
        Materials Research Society Symposium - Proceedings, 2001, Peer-reviewed
      • Traps at the SiC/SiO2-interface
        G. Pensl; M. Bassler; F. Ciobanu; V. Afanas'ev; H. Yano; T. Kimoto; H. Matsunami
        Materials Research Society Symposium - Proceedings, 2001, Peer-reviewed
      • Epitaxial growth of high-quality SiC and application to power devices.
        KIMOTO Tsunenobu; YANO Hiroshi; MATSUNAMI Hiroyuki
        應用物理, 10 Dec. 1999
      • Step-controlled epitaxial growth of SiC and its conductivity control
        Hiroyuki Matsunami; Tsunenobu Kimoto
        IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 1999, Peer-reviewed
      • Efficient power Schottky rectifiers of 4H-SiC
        A ITOH; T KIMOTO; H MATSUNAMI
        ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1995, Peer-reviewed
      • NUCLEATION AND STEP DYNAMICS IN SIC EPITAXIAL GROWTH
        H MATSUNAMI; T KIMOTO
        DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS, 1994, Peer-reviewed
      • A MODEL FOR DOUBLE POSITIONING TWIN FORMATION IN CUBIC SIC ON NONCUBIC SIC SUBSTRATES
        WS YOO; CP BEETZ; FR CHIEN; NUTT, SR; T KIMOTO; H MATSUNAMI
        EVOLUTION OF SURFACE AND THIN FILM MICROSTRUCTURE, 1993, Peer-reviewed
      • HIGH-RATE DEPOSITION OF A SI:H BY DIRECT PHOTO-DECOMPOSITION OF SI//2H//6 USING VACUUM ULTRA VIOLET LIGHT.
        Takashi Fuyuki; Kai-Ying Du; Shingo Okamoto; Sadayuki Yasuda; Tsunenobu Kimoto; Masahiro Yoshimoto; Hiroyuki Mtsunami
        Conference Record of the IEEE Photovoltaic Specialists Conference, 1987, Peer-reviewed
      • SiO//2 DEPOSITION BY PHOTO-INITIATION.
        Shigehiro Nishino; Tsunenobu Kimoto; Kohtaro Furusawa; Hiroyuki Matsunami
        Conference on Solid State Devices and Materials, 1986, Peer-reviewed
      • Engineering Application of Solid State Physics : Progress and Future Challenges of High-Voltage SiC Power Devices
        木本 恒暢
        固体物理, Jan. 2014
      • Progress in SiC Power Devices for Energy Efficiency
        木本 恒暢
        半導体・集積回路技術シンポジウム講演論文集 = Proceedings of Symposium on Semiconductors and Integrated Circuits Technology, 11 Jul. 2013
      • 第13回窒化物半導体応用研究会, 名古屋
        木本恒暢
        http://www.astf.or.jp/cluster/event/semicon/20120709/1-1.pdf, 2011
      • ワイドギャップ半導体SiCの材料 デバイスの現状と展望
        木本恒暢
        シンポジウム「新しい半導体デバイス技術のサステナビリティ俯瞰とそのアプローチ-ポストシリコン デバイスと将来加工プロセス研究-」(2007 3.9), 2007

      Presentations

      • Progress and Future Challenges of SiC Power MOSFETs
        T. Kimoto; T. Kobayashi; K. Tachiki; K. Ito; M. Kaneko
        5th IEEE Electron Devices Technology and Manufacturing Conference 2021, Apr. 2021, Invited
      • WISE Program: Innovation of Advanced Photonic and Electronic Devices
        T. Kimoto
        International Workshop on Education and Research for Future Electronics, 20 Jan. 2021, Invited
      • Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate
        Q. Jin; M. Nakajima; M. Kaneko; T. Kimoto
        2020 International Conference on Solid State Devices and Materials, Sep. 2020
      • High electron mobility along the c-axis in 4H-SiC
        R. Ishikawa; M. Hara; M. Kaneko; T. Kimoto
        2020 International Conference on Solid State Devices and Materials, Sep. 2020
      • Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals
        M. Hara; M. Kaneko; T. Kimoto
        2020 International Conference on Solid State Devices and Materials, Sep. 2020
      • Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs Based on FinFET Effect
        T. Kato; Y. Fukuoka; H. Kang; K. Hamada; A. Onogi; H. Fujiwara; T. Ito; T. Kimoto; F. Udrea
        IEEE 32nd International. Symposium on Power Semiconder Devices & ICs (ISPSD 2020), Sep. 2020
      • Progress and Future Prospects of High-Voltage SiC Power Devices
        T. Kimoto; M. Kaneko
        2020 International. Symposium on VLSI Technology, Systems and Applications, Aug. 2020, Invited
      • Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes
        M. Hara; S. Asada; T. Maeda; T. Kimoto
        International Symposium on Creation of Advanced Photonic and Electronic Devices 2020, 10 Mar. 2020
      • Gradual Resistive Switching Characteristics in Pt/TaOx/Ta2O5/Pt Cells
        T. Miyatani; Y. Nishi; T. Kimoto
        International Symposium on Creation of Advanced Photonic and Electronic Devices 2020, 10 Mar. 2020
      • Interface State Density Distribution Considering the Inversion Layer Quantization in SiC MOSFETs
        K. Ito; T. Kobayashi; T. Kimoto
        International Symposium on Creation of Advanced Photonic and Electronic Devices 2020, 10 Mar. 2020
      • Investigation of Gate Oxide Reliabilities in N2 Annealed SiC/SiO2 Structure
        K. Tachiki; T. Kimoto
        International Symposium on Creation of Advanced Photonic and Electronic Devices 2020, 10 Mar. 2020
      • Photoionization Cross Section of the Carbon-related Hole Trap in n-type GaN,
        K. Kanegae; M. Horita; T. Kimoto; J. Suda
        International Symposium on Creation of Advanced Photonic and Electronic Devices 2020, 10 Mar. 2020
      • Study on Avalanche Breakdown in GaN -Determination of Impact Ionization Coefficients and Critical Electric Field-
        T. Maeda; T. Narita; S. Yamada; T. Kachi; T. Kimoto; M. Horita; J. Suda
        International Symposium on Creation of Advanced Photonic and Electronic Devices 2020, 10 Mar. 2020
      • Progress and future challenges of SiC power devices for energy efficiency
        T. Kimoto; M. Kaneko
        12th International Symposium on Advanced Plasma Science & Its Applications for Nitrides and Nanomaterials, 09 Mar. 2020, Invited
      • Bipolar Forward Degradation Phenomena and Countermeasures in SiC Power Device
        Y. Yonezawa; K. Nakayama; H. Tsuchida; T. Kimoto; H. Okumura
        ECPE Workshop on Power Semiconductor Robustness – What Kills Power Devices?, Jan. 2020, Invited
      • Breakdown Phenomena in High- and Low-Voltage SiC Devices
        T. Kimoto; X. Chi; Y. Zhao; H. Niwa; M. Kaneko
        Materials Research Meeting 2019, Dec. 2019, Invited
      • Impact ionization coefficients in GaN measured by above- and sub-Eg illuminations for p-/n+ junction,
        T. Maeda; T. Narita; S. Yamada; T. Kachi; T. Kimoto; M. Horita; J. Suda
        2019 Int. Electron Devices Meeting, Nov. 2019
      • Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations
        D. Stefanakis; X. Chi; T. Maeda; M. Kaneko; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Impact of high-temperature nitrogen annealing on interface properties of p-type 4H-SiC/SiO2
        K. Tachiki; K. Kanegae; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Energy distributions of interface state density originating from tail states of the conduction band in SiC MOS structures
        K. Ito; T. Kobayashi; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Depth Profiles of Defects Generated by RIE in 4H-SiC Characterized by Deep-level Transient Spectroscopy,
        K. Kanegae; T. Okuda; M. Horita; J. Suda; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs
        M. Nakajima; Q. Jin; M. Kaneko; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces
        M. Hara; S. Asada; T. Maeda; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors
        H. Tanaka; N. Mori; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Resistivity of High-Purity Semi-Insulating 4H-SiC Substrates
        C. Koo; M. Kaneko; T. Kimoto
        9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
      • Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance
        S. Asada; M. Kaneko; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Next-Generation High- to Ultra-High-Voltage SiC Power Devices
        Y. Yonezawa; K. Nakayama; R. Kosugi; S. Harada; K. Kojima; T. Kato; H. Tsuchida; T. Kimoto; H. Okumura
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019, Invited
      • Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate
        M. Kaneko; A. Tsibizov; T. Kimoto; U. Grossner
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction
        T. Maeda; X. Chi; H. Tanaka; M. Horita; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC
        K. Kanegae; T. Okuda; M. Horita; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD
        C. Koo; M. Kaneko; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes
        M. Hara; S. Asada; T. Maeda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction
        D. Stefanakis; X. Chi; T. Maeda; M. Kaneko; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs
        M. Nakajima; Q. Jin; M. Kaneko; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems
        K. Ito; T. Kobayashi; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019, Invited
      • Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing
        K. Tachiki; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2019, Oct. 2019
      • High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        The 51th International Conference on Solid State Devices and Materials, Sep. 2019
      • Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy
        K. Kanegae; T. Narita; K. Tomita; T. Kachi; M. Horita; T. Kimoto; J. Suda
        2019 International Conference on;Solid-State Devices;Materials, Sep. 2019
      • Promise and Future Challenges of SiC Power MOSFETs
        T. Kimoto; T. Kobayashi; K. Tachiki; K. Ito
        International Conference on Insulating Films on Semiconductors 2019, Jul. 2019, Invited
      • Progress and Future Challenges of SiC Power Devices
        T. Kimoto
        Cambridge Power Electronics Colloquium 2019, Jul. 2019, Invited
      • Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN
        K. Kanegae; T. Narita; K. Tomita; T. Kachi; M. Horita; T. Kimoto; J. Suda
        30th International Conference on Defects in Semiconductors, Jul. 2019
      • Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy
        K. Kanegae; T. Narita; K. Tomita; T. Kachi; M. Horita; T. Kimoto; J. Suda
        13th International Conference on Nitride Semiconductors, Jul. 2019
      • Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        13th International Conference on Nitride Semiconductors, Jul. 2019
      • Growth and Defect Reduction of SiC for Low-Loss Power Devices”
        T. Kimoto
        2nd Nucreation and Growth Research Conference, Jun. 2019, Invited
      • Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        31st IEEE International Symposium on Power Semiconductor Devices&ICs, May 2019
      • Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells
        N. Kanegami; Y. Nishi; T. Kimoto
        2019 Materials Research Society Symposium Spring Meeting, Apr. 2019
      • Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells
        Y. Nishi; M. Arahata; T. Kimoto
        2019 Materials Research Society Symposium Spring Meeting, Apr. 2019
      • Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics
        T. Miyatani; Y. Nishi; T. Kimoto
        2019 Materials Research Society Symposium Spring Meeting, Apr. 2019
      • SiC Power Devices: Overview, Defect Electronics, and Reliability
        T. Kimoto
        2019 IEEE Int. Reliability Physics Symposium, Mar. 2019, Invited
      • Defect electronics in SiC for high-voltage power devices and future prospects
        T. Kimoto
        KIEEME-Silicon Carbide Conference, 2019, Invited
      • Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        64th International Electron Device Meeting, Dec. 2018
      • Progress in high and ultrahigh voltage silicon carbide device
        Y. Yonezawa; K. Nakayama; R. Kosugi; S. Harada; K. Koseki; K. Sakamoto; T. Kimoto; H. Okumura
        64th International Electron Device Meeting, Dec. 2018, Invited
      • DC and AC electrical characteristics of Ta2O5-based ReRAM cells
        T. Miyatani; Y. Nishi; T. Kimoto
        31st International Microprocesses and Nanotechnology Conference, Nov. 2018
      • Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation
        K. Kanegae; T. Narita; K. Tomita; T. Kachi; T. Kimoto; M. Horita; J. Suda
        International Workshop on Nitride Semiconductors, Nov. 2018
      • Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN
        M. Horita; T. Narita; T. Kachi; T. Uesugi; J. Suda
        International Workshop on Nitride Semiconductors, Nov. 2018
      • DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN
        K. Kanegae; H. Fujikura; Y. Otoki; T. Konno; T. Yoshida; M. Horita; T. Kimoto; J. Suda
        International Workshop on Nitride Semiconductors, Nov. 2018
      • Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        International Workshop on Nitride Semiconductors, Nov. 2018
      • Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        International Workshop on Nitride Semiconductors, Nov. 2018
      • Defect electronics in SiC for high-voltage power devices
        T. Kimoto; A. Iijima; S. Yamashita; H. Niwa
        4th Intensive Discussion on Growth of Nitride Semiconductors, Oct. 2018, Invited
      • Driving Force behind Reset Process in Pt/NiO/Pt Stack Cells
        Y. Nishi; H. Sasakura; T. Kimoto
        14th International Conference. on Atomically Controlled Surfaces, Interfaces and Nanostructures, Oct. 2018
      • SiC power devices: material and device technology
        T. Kimoto
        International Workshop on Silicon Carbide Material and Device, Sep. 2018, Invited
      • Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect
        T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        2018 International Conference on Solid-State Devices and Materials, Sep. 2018
      • Theoretical Analysis of Carrier Lifetimes in SiC by Using Rate Equations
        S. Yamashita; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • SiC vertical-channel n- and p-JFETs fully fabricated by ion implantation
        M. Kaneko; U. Grossner; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • 400℃ Operation of Normally-off n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
        M. Nakajima; M. Kaneko; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance
        S. Asada; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage
        T. Maeda; X. Chi; M. Horita; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Reduction of interface state density in SiC (0001) MOS structures by very-low-oxygen-partial-pressure annealing
        T. Kobayashi; K. Tachiki; K. Ito; Y. Matsushita; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Modeling of Electron Trapping in SiC MOSFETs Considering Interface-State-Density Distribution Extracted from Gate Characteristics
        K. Ito; T. Kobayashi; M. Horita; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Tunneling current in 4H-SiC p-n junctions at high electric field
        X. Chi; H. Niwa; Y. Nishi; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Theoretical and experimental investigation of critical condition for expansion/contraction of a single Shockley stacking fault in 4H-SiC”
        A. Iijima; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2018, Sep. 2018
      • Fundamentals and future challenges of SiC power device material
        T. Kimoto
        TIA Power Electronics Summer School, Aug. 2018, Invited
      • Accurate estimation of H1 trap concentration in n-type GaN layers
        K. Kanegae; M. Horita; T. Kimoto; J. Suda
        International Symposium on Growth of Ⅲ-Nitrides, Aug. 2018
      • Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation
        K. Kanegae; M. Horita; T. Kimoto; J. Suda
        Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018, Jul. 2018
      • Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements
        T. Maeda; M. Okada; M. Ueno; Y. Yamamoto; T. Kimoto; M. Horita; J. Suda
        Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018, Jul. 2018
      • Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage
        T. Maeda; M. Okada; M. Ueno; Y. Yamamoto; T. Narita; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda
        60th Electronic Materials Conference, Jun. 2018
      • Resistance Increase by Overcurrent Suppression in Forming Process in Pt/TiO2/Pt Cells
        R. Matsui; Y. Kuriyama; Y. Nishi; T. Kimoto
        2018 Materials Research Society Symposium Spring Meeting, Apr. 2018
      • Distribution of Forming Characteristics in NiO-Based Resistive Switching Cells with Two Kinds of NiO Crystallinity
        Y. Nishi; T. Kimoto
        2018 Materials Research Society Symposium Spring Meeting, Apr. 2018
      • Microscopic Mechanism of the Removal of Carbon-Associated Defects at a SiO2/SiC Interface due to Phosphorus Treatment”
        Kobayashi; Y. Matsushita; T. Kimoto; A. Oshiyama
        CPMD 2017 Workshop, Sep. 2017
      • Design criterion to avoid on-characteristics deterioration due to base spreading resistance in SiC bipolar junction transistors
        S. Asada; J. Suda; T. Kimoto
        Asia-Pacific Workshop on Widegap Semiconductors 2017, Sep. 2017
      • Breakdown characteristics of 4H-SiC p-n junction diodes with a wide range of doping concentration”
        X. Chi; H. Niwa; Y. Nishi; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Experimental Study on Short Channel Effects in 4H-SiC MOSFETs
        K. Tachiki; T. Ono; T. Kobayashi; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Fabrication of full-SiC comb-drive resonators by conduction-type-selective electrochemical etching
        T. Enokizono; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Electrostatic-energy model for single Shockley stacking fault formation in 4H-SiC crystals
        A. Iijima; J.Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017, Invited
      • Aluminum doping concentration calibration by photoluminescence in high-quality uncompensated p-type 4H-SiC
        S. Asada; T. Kimoto; I. G. Ivanov
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Effects of parasitic region in SiC bipolar junction transistors on forced current gain
        S. Asada; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Evidence of Carbon-Related Defects at the SiC MOS Interface and Mechanism of Defect Passivation by Nitridation and Phosphorus Treatment – Chemical Analyses Combined with DFT Calculations
        T. Kobayashi; Y. Matsushita; T. Okuda; A. Oshiyama; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Observation of Oxidation-Induced Carbon-Rich Region in the Near-Interface SiC by High-Resolution STEM-EDX
        T. Kobayashi; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • 400°C operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate
        M. Kaneko; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2017, Sep. 2017
      • Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation
        H. Tanaka; J. Suda; T. Kimoto
        2017 International Conference on Simulation of Semiconductor Processes and Devices, Sep. 2017
      • Investigation of hole traps in n-type homoepitaxial GaN by ODLTS focusing on sub-bandgap-light optical excitation process
        K. Kanegae; T. Kimoto; M. Horita; J. Suda
        12th International Conference on Nitride Semiconductors, Jul. 2017
      • Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements
        T. Maeda; M. Okada; M. Ueno; Y. Yamamoto; T. Kimoto; M. Horita; J. Suda
        12th International Conference on Nitride Semiconductors, Jul. 2017
      • Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process
        H. Tanaka; J. Suda; T. Kimoto
        IEEE Silicon Nanoelectronics Workshop 2017, Jun. 2017
      • Progress and Future Challenges of SiC Material and Power Devices
        T. Kimoto
        Compound Semiconductor Week 2017, May 2017, Invited
      • Understanding and reduction of degradation phenomena in SiC power devices
        T. Kimoto; A. Iijima; H. Tsuchida; T. Miyazawa; T. Tawara; A. Otsuki; T. Kato; Y. Yonezawa
        IEEE 2017 Int. Reliability Physics Symposium, Apr. 2017, Invited
      • Control of carrier lifetime and application to ultrahigh-voltage SiC bipolar devices
        T. Kimoto
        2017 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices, Mar. 2017, Invited
      • Intentional introduction of misfit dislocations at AlN/SiC heterointerface
        M. Kaneko; T. Kimoto; J. Suda
        6th CIRFE Seminar, 2017
      • MOS channel properties on homoepitaxially-grown p-type GaN layers
        Takashima; K. Ueno; H. Matsuyama; M. Edo; T. Takahashi; M. Shimizu; M. Horita; J. Suda; K. Nakagawa
        3rd Intensive Discussion on Growth of Nitride Semiconductors, Jan. 2017
      • Progress and future challenges of SiC power devices
        T. Kimoto
        2017 SPIE Phtonics West, Jan. 2017, Invited
      • Progress and future challenges of high-voltage SiC power devices
        T. Kimoto
        3rd Intensive Discussion on Growth of Nitride Semiconductors, Jan. 2017, Invited
      • Strain controls of high quality AlN layers by misfit dislocations introduces at step edges of SiC(0001) substrates
        M. Kaneko; T. Kimoto; J. Suda
        International Workshop on Nitride Semiconductors 2016, Oct. 2016
      • The appearance condition of quantized conductance in NiO-based resistibe switching cells
        Y. Nishi; H. Sasakura; T. Kimoto
        2016 Materials Research Society Symposium Fall Meeting, Sep. 2016
      • Lifetime control and breakdown analysis in SiC for ultrahigh-voltage power devices
        T. Kimoto; H. Niwa; E. Saito; J. Suda
        2016 Materials Research Society Symposium Fall Meeting, Sep. 2016, Invited
      • Impact ionization coefficients in 4H-SiC at high temperatures
        Y. Zhao; H. Niwa; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Dependence of surface recombination velocity for 4H-SiC on contacted aqueous solution
        Y. Ichikawa; M. Ichimura; T. Kimoto; M. Kato
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Demonstration of 10 kV SiC hybrid unipolar/bipolar operating diodes
        H. Niwa; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • High selectivity in SiC/SiO2 etching by ICP-RIE in a SF6-O2-Ar chemistry
        K. Hiramatsu; T. Okuda; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Etching mode in electrochemical etching of p-type 4H-SiC and its impact on suppression of etch pits
        T. Enokizono; T. Kimoto; J. Suda
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Reduction of interface state density in SiC(0001) MOS structures by post-oxidation Ar annealing at high temperature”
        T. Kobayashi; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Theoretical analysis of hole density, hole mobility, and hall scattering factor in p-type 4H-SiC
        H. Tanaka; S. Asada; T. Kimoto; J. Suda
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Device-relevant and processing induced deep level traps and recombination centers in 4H-SiC
        I. D. Booker; T. Okuda; E. O. Sveinbjornsson; P. Grivickas; J. Hassan; R. Karhu; J. Suda; E. Janzen; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016, Invited
      • Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer
        T. Tawara; T. Miyazawa; M. Ryo; M. Miyazato; T. Fujimoto; K. Takenaka; S. Matsunaga; M. Miyajima; A. Otsuki; Y. Yonezawa; T. Kato; H. Okumura; T. Kimoto; H. Tsuchida
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO2 with post-oxidation nitridation
        S. Asada; T. Kimoto; J. Suda
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Structure and glide velocity of leading partials for expanding double shockley stacking faults in n+-type 4H-SiC
        Y. Tokuda; I. Kamata; T. Yamashita; T. Naijo; T. Miyazawa; N. Hoshino; T. Kato; H. Okumura; T. Kimoto; H. Tsuchida
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016, Invited
      • Correlation between shapes of shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers
        A. Iijima; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016, Invited
      • Periodically aligned misfit dislocations at AlN/SiC heterointerface
        M. Kaneko; T. Kimoto; J. Suda
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016
      • Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)
        T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2016, Sep. 2016, Invited
      • Progress and future challenges of SiC power devices
        T. Kimoto
        Minicolloquium on Advanced Electron Devices, Aug. 2016, Invited
      • Frontiers and future challenges of SiC power devices
        T. Kimoto
        TIA Power Electronics Summer School 2016, Aug. 2016, Invited
      • Dislocation velocity of Shockley partials for stacking fault expansion in heavily-nitrogen-doped 4H-SiC
        Y. Tokuda; I. Kamata; N. Hoshino; T. Kato; H. Okumura; T. Kimoto; H. Tsuchida
        The 18th International Conference on Crystal Growth and Epitaxy, Aug. 2016
      • Extended and point defects in 4H-SiC epitaxial layers
        T. Kimoto; C. Kawahara; A. Iijima; T. Okuda
        The 18th International Conference on Crystal Growth and Epitaxy, Aug. 2016, Invited
      • Bulk and epitaxial growth of SiC
        T. Kimoto
        16th International Summer School on Crystal Growth, Aug. 2016, Invited
      • Long carrier lifetime in SiC epilayers and high-voltage devices
        T. Kimoto; K. Kawahara; B. Zippelius; N. Kaji; E. Saito; J. Suda
        International Sympsium on SiC Semiconductor in celebration of Jim Choyke, Aug. 2016, Invited
      • Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation
        H. Tanaka; J. Suda; T. Kimoto
        33rd International Conference on the Physics of Semiconductors, Aug. 2016
      • High-voltage SiC power devices for energy efficiency
        T. Kimoto
        1st International Symposium on Power Electronics 2016, Jul. 2016, Invited
      • Theoretical analysis of high-field hole transport in germanium and silicon nanowires
        H. Tanaka; J. Suda; T. Kimoto
        IEEE Si Nanoelectronics Workshop 2016, Jun. 2016
      • Fundamentals, promise, and future challenges of wide bandgap semiconductor power devices
        T. Kimoto
        28th IEEE International Symposium on Power Semiconductor Devices and ICs, Jun. 2016, Invited
      • Demonstration of 3 kV 4H-SiC reverse blocking MOSFET
        S. Mori; M. Aketa; T. Sakaguchi; H. Asahara; T. Nakamura; T. Kimoto
        28th IEEE International Symposium on Power Semiconductor Devices and ICs, Jun. 2016
      • Progress in process technologies for SiC Power devices
        T. Kimoto
        The 229th Electrochemical Society Spring Meeting, May 2016
      • Ion implantation technology in SiC for high-voltage /high-temperature devices
        T. Kimoto; K. Kawahara; N. Kaji; H. Fujihara; J. Suda
        16th IEEE International Workshop on Junction Technology, May 2016
      • Control of carbon vacancy in SiC toward ultrahigh-voltage devices
        T. Kimoto; K. Kawahara; B. Zippelius; E. Saito; J. Suda
        2016 International Symposium on Photonics and Electronics Science and Engineering, Mar. 2016
      • Quantized conductance in Pt/NiO/Pt cells showing two modes in forming process and resistive switching
        H. Sasakura; Y. Nishi; T. Kimoto
        2015 Materials Research Society Fall Meeting, Dec. 2015
      • Strain controls in AlN layer by ultra-thin GaN interlayer grown on high-quality AlN template coherently grown on SiC(0001) by PAMBE
        M. Kaneko; T. Kimoto; J. Suda
        11th International Conference on Nitride Semiconductors, Nov. 2015
      • Observation of lateral satellite peaks in nitride semiconductor: HRXRD study of AlN layer grown on step-height-controlled SiC substrate
        M. Kaneko; T. Kimoto; J. Suda
        6th International Symposium on Growth of III-Nitrides, Nov. 2015
      • Effect of initial III/V ratio on formation of threading dislocations in PAMBE-grwon AlN layers on SiC substrates
        M. Kaneko; T. Kimoto; J. Suda
        6th International Symposium on Growth of III-Nitrides, Nov. 2015
      • Characterization of stress around 4H-SiC metal-oxide semiconductor field-effect transistor (MOSFET) using Raman spectroscopy
        M. Yoshikawa; H. Seki; K. Kosaka; R. Sugie; J. Sameshima; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Nov. 2015
      • Progress and future challenges of SiC material and power devices
        T. Kimoto
        International Symposium on Power Electronics of Advanced WBG Semiconductors, Oct. 2015, Invited
      • Surface passivation on p-type 4H-SiC epitaxial layers by deposited SiO2 with POCl3 annealing
        T. Okuda; T. Kobayashi; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC
        T. Okuda; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Surface recombination velocities for polished p-type 4H-SiC
        M. Kato; K. Kohama; H. Shibata; M. Ichimura; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Cause for the mobility drop in SiC MOSFETs with heavily-doped p-bodies
        T. Kobayashi; S. Nakazawa; T. Okuda; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Electrical properties of n-type and p-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates
        H. Fujihara; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC
        K. Murakami; S. Tanai; T. Okuda; T. Kimoto; T. Umeda
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Characterization of the interfacial chemical structure of silicon dioxide on 4H-SiC(0001) by Fourier transform infrared spectroscopy
        H. Seki; M. Yoshikawa; T. Kobayashi; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Carbon interstitial clusters in 4H-SiC
        X. T. Trinh; V. Ivády; K. Kawahara; J. Suda; T. Kimoto; A. Gali; I. A. Abrikosov; E. Janzén; N.T. Son
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Promise and limitation of ultrahigh-voltage SiC PiN diodes with long carrier lifetimes studied by device simulation
        K. Yamada; H. Niwa; T. Okuda; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Impact ionization coefficients and critical electric field strength in 4H-SiC
        H. Niwa; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Control of carrier lifetimes in thick n-type 4H-SiC epilayers by high-temperature annealing
        E. Saito; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Enhancement of carrier lifetimes in p-type 4H-SiC epitaxial layers
        T. Okuda; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015, Invited
      • Ultrahigh-voltage SiC bipolar devices for future power infrastructure
        T. Kimoto; N. Kaji; K. Yamada; H. Niwa; J. Suda; Y. Yonezawa; K. Fukuda; H. Okumura
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015, Invited
      • Temperature dependence of Hall scattering factor in p-type 4H-SiC with various doping concentrations”
        S. Asada; T. Okuda; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Accurate evaluation of interface state densities of 4H-SiC(0001) MOS structures annealed in POCl3 by C-ψs method
        T. Kobayashi; T. Okuda; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015
      • Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices
        Katsu; T. Hosoi; Y. Nanen; T. Kimoto; T. Shimura; H. Watanabe
        International Conference on Silicon Carbide and Related Materials 2015, Oct. 2015, Invited
      • Ballistic and quasi ballistic hole transport properties in germanium nanowire pMOSFETs based on an extended top of the barrier” model
        H. Tanaka; J. Suda; T. Kimoto
        2015 International Conference on Solid State Devices and Materials, Sep. 2015
      • Control of carbon vacancy in SiC toward ultrahigh-voltage power devices
        T. Kimoto; K. Kawahara; B. Zippelius; E. Saito; J. Suda
        16th International Conference on Defects-Recognition, Imaging, and Physics in Semiconductors, Sep. 2015, Invited
      • Progress and future challenges of SiC material and power devices
        T. Kimoto
        International Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 201, Aug. 2015, Invited
      • Frontiers and future challenges of SiC power devices
        T. Kimoto
        TIA Power Electronics Summer School 2015, Aug. 2015, Invited
      • Carrier lifetime control for ultrahigh-voltage SiC bipolar power devices
        J. Suda; T. Kimoto
        International Workshop on Frontier Photonic and Electronic Materials and Devices 2015, Jul. 2015, Invited
      • Hydrogen passivation of unknown lifetime-killing defects in Al-doped p-type 4H-SiC epitaxial layers
        J. Suda; T. Okuda; T. Kimoto
        57th Electronic Material Conference, Jun. 2015
      • Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs
        H. Fujihara; H. Tanaka; N. Morioka; J. Suda; T. Kimoto
        IEEE 2015 International Meeting for Future of Electron Devices, Jun. 2015
      • Impacts of surface roughness scattering on hole mobility in germanium nanowires
        H. Tanaka; J. Suda; T. Kimoto
        2015 Silicon Nanoelectronics Workshop, Jun. 2015
      • Control of carbon vacancy defects in SiC
        T. Kimoto; K. Kawahara; B. Zippelius; T. Hiyoshi
        1st International Symposium SiC Spintronics, Jun. 2015, Invited
      • High-quality SiC epitaxial growth using standard chemistry
        T. Kimoto
        1st International Symposium SiC Spintronics, Jun. 2015, Invited
      • Ultrahigh-voltage technology based on SiC bipolar devices
        T. Kimoto
        International SiC Power Electronics Applications Workshop 2015, May 2015, Invited
      • Overview of strategic WBG power semiconductor programs in Japan
        T. Kimoto
        International SiC Power Electronics Applications Workshop 2015, May 2015, Invited
      • Progress in SiC power devices and manufacturing technology
        T. Kimoto
        International Symposium on Semiconductor Manufacturing 2014, Dec. 2014, Invited
      • Progress in ultrahigh-voltage SiC devices for future power infrastructure
        T. Kimoto; J. Suda; Y. Yonezawa; K. Asano; K. Fukuda; H. Okumura
        2014 IEEE International Electron Devices Meeting, Dec. 2014, Invited
      • DC and AC conduction mechanism in different resistance states of Pt/NiO/Pt stack structures
        Y. Nishi; T. Iwata; T. Kimoto
        2014 Material Research Society Fall Meeting, Dec. 2014
      • SiC device; current status and future
        T. Kimoto
        2014 Asia-Pacific Microwave Conference, Nov. 2014, Invited
      • Conduction-type dependence of thermal oxidation rate on SiC(0001)
        T. Kobayashi; J. Suda; T. Kimoto
        2014 International Meeting for Future of Electron Devices, Nov. 2014
      • Progress and future challenges in SiC material for high-voltage power devices
        T. Kimoto; H. Niwa; T. Okuda; N. Kaji; J. Suda
        American Vacuum Society 61st International Symposium, Nov. 2014, Invited
      • Fabrication and performance of 16-kV ultrahigh-voltage SiC power devices
        Y. Yonezawa; T. Mizushima; K. Takenaka; H. Fujisawa; T. Kato; D. Okamoto; M. Sometani; T. Deguchi; S. Harada; Y. Tanaka; S. Matsunaga; T. Hatakeyama; M. Okamoto; M. Yoshikawa; N. Oose; M. Ryo; H. Kimura; M. Miyajima; N. Kumagai; M. Takei; M. Arai; K. Takao; T. Izumi; T. Hayashi; K. Nakayama; K. Asano; A. Otsuki; K. Fukuda; H. Okumura; T. Kimoto
        226th Meeting of Electrochemical Society 2014, Oct. 2014, Invited
      • Determination of impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices
        H. Niwa; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Motion of basal-plane dislocations in thick 4H-SiC epilayers with different conduction types and various doping densities
        C. Kawahara; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Device performance and switching characteristics of 16 kV ultra-high voltage SiC flip-type n-channel IE-IGBTs
        Y. Yonezawa; T. Mizushima; K. Takenaka; H. Fujisawa; T. Kato; Y. Tanaka; D. Okamoto; M. Sometani; N. Kumagai; T. Hatakeyama; M. Takei; M. Arai; K. Takeo; T. Hayashi; K. Nakayama; K. Asano; M. Miyajima; K. Fukuda; H. Okumura; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing
        T. Hosoi; Y. Nanen; T. Kimoto; A. Yoshigoe; Y. Teraoka; T. Shimura; H. Watanabe
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Characterization of inhomogeneity in SiO2 films on 4H-SiC epitaxial substrate by a combination of Fourier transform infrared spectroscopy and cathodoluminescence spectroscopy
        M. Yoshikawa; H. Seki; K. Inoue; T. Kobayashi; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • High-temperature operation of electrostatically-excited single-crystalline 4H-SiC microcantilever resonators
        K. Sato; K. Adachi; H. Okamoto; H. Yamaguchi; T. Kimoto; J. Suda
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Influence of conduction-type on thermal oxidation rate in SiC(0001) with various doping densities
        T. Kobayashi; J. Suda; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Identification of stacking faults by UV photoluminescence imaging spectroscopy on thick, lightly-doped n-type 4°-off 4H-SiC epilayers”
        N. Thierry-Jebali; C. Kawahara; T. Miyazawa; H. Tsuchida; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Interface properties and mobility-limiting factors in 4H-SiC(0001), (11-20), and (1-100) MOS structures
        S. Nakazawa; T. Okuda; T. Kobayashi; J. Suda; T. Nakamura; T. Kimoto
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014, Invited
      • Improvement of carrier lifetimes in lightly-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen passivation
        T. Okuda, T; Miyazawa; H. Tsuchida; T. Kimoto; J. Suda
        European Conference on Silicon Carbide and Related Materials 2014, Sep. 2014
      • Progress and future challenges of silicon carbide devices for integrated circuits
        T. Kimoto
        IEEE 2014 Custom Integrated Circuits Conference, Sep. 2014, Invited
      • Temperature dependence of current gain in 4H-SiC bipolar junction transistors
        S. Asada; T. Okuda; T. Kimoto; J. Suda
        International Conference of Solid State Devices & Materials, Sep. 2014
      • Frontiers and future challenges of SiC power devices
        T. Kimoto
        TIA Power Electronics Summer School 2014, Aug. 2014, Invited
      • Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
        T. Mizushima; K. Takenaka; H. Fujisawa; T. Kato; S. Harada; Y. Tanaka; M. Okamoto; M. Sometani; D. Okamoto; N. Kumagai; S. Matsunaga; T. Deguchi; M. Arai; T. Hatakeyama; Y. Makifuchi; T. Araoka; N. Oose; T. Tsutsumi; M. Yoshikawa; K. Tatera; A. Tanaka; S. Ogata; K. Nakayama; T. Hayashi; K. Asano; M. Harashima; Y. Sano; E. Morisaki; M. Takei; M. Miyajima; H. Kimura; A. Otsuki; Y. Yonezawa; K. Fukuda; H. Okumura; T. Kimoto
        26th International Symposium on Power Semiconductor Devices & ICs, Jun. 2014
      • Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires
        H. Tanaka; S. Mori; N. Morioka; J. Suda; T. Kimoto
        2014 IEEE Silicon Nanoelectronics Workshop, Jun. 2014
      • Ion implantation technology in SiC for power device applications
        T. Kimoto; K. Kawahara; H. Niwa; N. Kaji; J. Suda
        IEEE 14th International Workshop on Junction Technology, May 2014, Invited
      • Progress and future challenges of high-voltage SiC power devices
        T. Kimoto; H. Miyake; H. Niwa; T. Okuda; N. Kaji; J. Suda
        2013 Fall Meeting, Material Research Society, Dec. 2013, Invited
      • Evaluation of traps in 4H-SiC/SiO2 interface
        T. Hatakeyama; M. Someya; K. Fukuda; H. Okumura; T. Kimoto
        2013 Int. Workshop on Dielectric Thin Films for Future Electron Devices – Science and Technology, Nov. 2013, Invited
      • Measurement of impact lionization coefficient in 4H-SiC toward ultrahigh-voltage power devices
        H. Niwa; J. Suda; T. Kimoto
        Swiss-Kyoto Symposium, Nov. 2013
      • Ultrahigh-voltage SiC power devices for green society
        J. Suda; T. Kimoto
        Swiss-Kyoto Symposium, Nov. 2013, Invited
      • Physics of SiC MOS interface for high-voltage power devices
        T. Kimoto; H. Yoshioka; Y. Nanen; S. Nakazawa; J. Suda
        12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nov. 2013, Invited
      • Physics of SiC MOS interface and development of trench MOSFETs
        T. Kimoto; H. Yoshioka; T. Nakamura
        1st IEEE Workshop on Wide Bandgap Power Devices and Applications, Sep. 2013, Invited
      • Current main issues in SiC electronics: what limits the performance of SiC?
        T. Kimoto
        Tutorial Day of International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013, Invited
      • Identification of dislocations in 4H-SiC epilayers and substrates using photoluminescence imaging
        C. Kawahara; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Fabrication of electrostatically actuated 4H-SiC microcantilever resonators by using n/p/n epitaxial structures and doping-selective electrochemical etching
        K. Sato; K. Adachi; H. Okamoto; H. Yamaguchi; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Single-crystalline 4H-SiC microcantilever resonators with a 10 times higher quality factor than 3C-SiC
        K. Adachi; H. Okamoto; H. Yamaguchi; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • emperature dependence of impact ionization coefficients in 4H-SiC
        H. Niwa; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013, Invited
      • Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100oC and 1500oC and measurements of lifetime and photoluminescence
        W. M. Klahold; R. P. Devaty; W. J. Choyke; T. Kimoto; T. Ohshima
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Minority carrier transient spectroscopy of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC
        G. Alfieri; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • The carbon vacancy in SiC
        N. T. Son; X. T. Trinh; K. Kawahara; J. Suda; T. Kimoto; L. S. Løvlie; B. G. Svensson; K. Szasz; T. Hornos; A. Gali; T. Umeda; J. Isoya; T. Makino; T. Ohshima; E. Janzén
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013, Invited
      • Designing of quasi-modulated region in 4H-SiC lateral RESURF MOSFETs
        Y. Nanen; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Deep-level transient spectroscopy characterization of mobility-limiting interface states in SiO2/4H-SiC structures
        T. Hatakeyama; M. Sometani; K. Fukuda; H. Okumura; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility
        H. Yoshioka; T. Nakamura; J. Senzaki; A. Shimozato; Y. Tanaka; H. Okumura; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013, Invited
      • Ultrahigh-voltage (> 20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation
        N. Kaji; H. Niwa; J. Suda; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations
        X. T. Trinh; K. Szász; T. Hornos; K. Kawahara; J. Suda; T. Kimoto; A. Gali; E. Janzén; N. T. Son
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Solution growth of n-type 4H-SiC bulk crystals with low resistivity
        T. Shirai; K. Danno; A. Seki; H. Sakamoto; T. Bessho; T. Kimoto
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Carrier lifetime improvement in Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation
        T. Okuda; T. Kimoto; J. Suda
        International Conference on Silicon Carbide and Related Materials 2013, Sep. 2013
      • Impact of size and geometry on bandstructure of rectangular-shaped Si and Ge nanowires
        N. Morioka; H. Tanaka; S. Mori; J. Suda; T. Kimoto
        2013 EMN East Meeting, Sep. 2013, Invited
      • Structural and optical characterization of 2H-AlN coherently-grown on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy
        M. Kaneko; H. Okumura; R. Ishii; M. Funato; Y. Kawakami; T. Kimoto; J. Suda
        2013 Japan Society Apply Physics – Material Research Society Joint Symposia, Sep. 2013
      • Free exciton transition energies of AlN heteroepitaxially-grown on SiC
        M. Kaneko; H. Okumura; R. Ishii; M. Funato; Y. Kawakami; T. Kimoto; J. Suda
        10th Topical Workshop on Heterostructure Microelectronics, Sep. 2013
      • Ultrahigh-voltage SiC devices for future power infrastructure
        T. Kimoto
        43th European Solid-State Device Research Conference, Sep. 2013, Invited
      • Frontiers and future challenges of SiC power devices
        T. Kimoto
        TIA Power Electronics Summer School 2013, Aug. 2013, Invited
      • Large shifts of free excitonic transition energies and phonon frequency of AlN coherently-grown on 6H-SiC (0001) due to strong in-plane compressive strain
        M. Kaneko; H. Okumura; R. Ishii; M. Funato; Y. Kawakami; T. Kimoto; J. Suda
        10th International Conference on Nitride Semiconductors 2013, Aug. 2013
      • Carbon vacancy- the lifetime killing defect in SiC
        N.T. Son; X.T. Trinh; K. Kawahara; J. Suda; T. Kimoto; L.S. Lovlie; B.G. Svensson; K. Szasz; T. Hornos; A. Gali; T. Umeda; J. Isoya; T. Makino; T. Ohshima; E. Janzén
        16th International Symposium on the Phys. of Semiconductors and Applications, Jul. 2013
      • Origin of the carrier lifetime killer in SiC
        T. Kimoto; K. Kawahara; J. Suda; X. T. Trinh; N.T. Son; E. Janzen
        27th International Conference on Defects in Semiconductors, Jul. 2013
      • Carrier recombination in SiC epilayers and substrates – impacts of point and extended defects
        T. Kimoto; C. Kawahara; S. Ichikawa; Y. Nishi; J. Suda
        27th International Conference on Defects in Semiconductors, Jul. 2013
      • Size and geometric effects on conduction band structure of GaAs nanowires
        H. Tanaka; N. Morioka; S. Mori; J. Suda; T. Kimoto
        2013 IEEE International Meeting for Future of Electron Devices, Kansai, Jun. 2013
      • Surface smoothing process of Si nanowires with various orientations by hydrogen anneal under different pressures
        N. Morioka; J. Suda; T. Kimoto
        55th Electronic Materials Conference, Jun. 2013
      • Extraction of current-voltage characteristics of m-plane p-type GaN contacts by using transmission line method patterns
        J. Suda; J. Youn; T. Kimoto; K. Kurihara; S. Nagao
        55th Electronic Materials Conference, Jun. 2013
      • Anisotropy in surface self-diffusion on Si nanowires and its impact on wire instability in hydrogen annealing
        N. Morioka; J. Suda; T. Kimoto
        2013 Silicon Nanoelectronics Workshop, Jun. 2013
      • Junction technology in SiC for high-voltage power devices
        T. Kimoto; K. Kawahara; H. Niwa; T. Okuda; J. Suda
        IEEE 13th International Workshop on Junction Technology, Jun. 2013, Invited
      • Fundamentals and frontiers of SiC power device technology
        T. Kimoto
        Short Course of 25th International Symposium of Power Semiconductor Devices & ICs, May 2013
      • Short-circuit tests on SiC power MOSFETs”
        A. Castellazzi; T. Funaki; T. Kimoto; T. Hikihara
        IEEE 10th International Conference on Power Electronics and Drive Systems, Apr. 2013
      • Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of NiO-based resistive switching cells
        T. Iwata; Y. Nishi; T. Kimoto
        2013 Spring Meeting Material Research Society, Apr. 2013
      • Weibull distributions of forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory
        Y. Nishi; T. Iwata; T. Kimoto
        2013 Spring Meeting Material Research Society, Apr. 2013
      • Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
        Y. Yonezawa; T. Mizushima; K. Takenaka; H. Fujisawa; T. Kato; S. Harada; Y. Tanaka; M. Okamoto; Y. Makifuchi; E. Morisaki; K. Fukuda; H. Okumura; T. Kimoto
        2013 International Electron Device Meeting, 2013
      • 薄膜作製応用ハンドブック
        Contributor, 炭化ケイ素(SiC)パワーデバイス
        NTS, 2020
      • Wide Bandgap Semiconductor Power Devices
        Contributor, SiC Material Properties
        Woodhead Publishing, 2018
      • Handbook of Crystal Growth, Volume 3B: Thin Films and Epitaxy, 2nd edition
        Contributor, Epitaxial Growth of SiC
        2014
      • Fundamentals of Silicon Carbide Technology
        Joint work
        John Wiley & Sons, 2014
      • Silicon Carbide and Related Materials 2013
        Editor
        Trans Tech Publications, 2014
      • 「電気工学ハンドブック」電気学会編
        Contributor, SiCパワーデバイス
        オーム社, 2013
      • ワイドギャップ半導体 あけぼのから最前線へ
        Joint work, 「SiC物性評価・制御の進展」,「SiC電子エコデバイスの総論」
        培風館, 2013
      • Silicon Carbide Epitaxy
        Joint work, 4H-SiC epitaxial growth and defect characterization
        Publisher Research Signpost, 2012
      • 半導体SiC技術と応用
        木本恒暢
        日刊工業新聞社, 2011, Not refereed
      • パワーデバイス
        木本恒暢
        丸善, 2011, Not refereed
      • Silicon Carbide, Vol. 1: Growth, Defects, and Novel Applications, Vol.2: Power Devices and Sensors
        T. Kimoto
        Wiley-VCH Verlag, 2010, Not refereed
      • Silicon Carbide and Related Materials 2007
        T. Kimoto
        Trans Tech Publications, 2009, Not refereed
      • パワーエレクトロニクスの新展開
        木本恒暢
        シーエムシー出版, 2009, Not refereed
      • Silicon Carbide 2006 - Materials, Processing and Devices
        T. Kimoto
        Mat. Res. Soc., 2006, Not refereed
      • Silicon Carbide 2004-Materials, Processing and Devices
        T. Kimoto
        Mat. Res. Soc., 2004, Not refereed
      • Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method
        木本 恒暢
        Amorphous and Crystalline Silicon Carbide IV. Spronger-Verlag,31, 1992, Not refereed

      Works

      • SiC結晶成長とデバイス応用
        From 2000, To 2004
      • SiC結晶成長技術
        From 1999, To 2004
      • Crystal Grouth of SiC
        From 1999, To 2001
      • Crystal Grouth of SiC and Device Applocations
        From 2001
      • ダイヤモンド半導体に関する研究
        From 1989
      • Study on Semiconducting Diamond
        From 1989

      Awards

      • 22 Mar. 2022
        応用物理学会解説論文賞
      • 26 Oct. 2005
        IEEE EDS Message from Spirited Kansai Award
      • 01 Jan. 2024
        IEEE Andrew S.Grove Award
      • 29 May 2023
        Onmi Best Paper Award
      • 08 Jul. 2022
        衞藤細矢記念賞
      • 1998
        第15回日本結晶成長学会 論文賞
      • 1999
        井上研究奨励賞
      • 2004
        電子情報通信学会業績賞
      • 2005
        IEEE EDS, MFSK Award
      • 2006
        SSDM 2005 Paper Award
      • 2007
        IEEE Kansai Chapter, Kansai Medal
      • 2011
        Osaka Science Prize
      • 2012
        IEEE IMFEDK 2012, Best Paper Award
      • 2003
        電子情報通信学会エレクトロニクスソサイエティ 功労者表彰
      • 2012
        APEX/JJAP Editorial Contribution Award
      • 2012
        International Workshop on Nitride Semiconductors 2012 Best Paper Award
      • 2013
        43th ESSDRC Distinguished Contribution Award
      • 2014
        市村学術賞
      • 2014
        市村産業賞
      • 2014
        応用物理学会フェロー
      • 2015
        IEEE Fellow
      • 2015
        IEEE IMFEDK 2015 Best Paper Award
      • 2015
        加藤記念賞
      • 2016
        応用物理学会論文賞(解説論文)
      • 2020
        岩谷直治記念賞
      • 2020
        文部科学大臣表彰 科学技術賞(研究部門)
      • 2020
        IEEE ISPSD 2020 Ohmi Best Paper Award
      • 2017
        科学研究費助成事業 審査員表彰
      • 2020
        山﨑貞一賞
      • 2021
        APEX/JJAP Editorial Contribution Award

      External funds: Kakenhi

      • Materials Science and Device Physics in SiC toward Robust Electronics
        Grant-in-Aid for Scientific Research (S)
        Broad Section C
        Kyoto University
        木本 恒暢
        From 05 Jul. 2021, To 31 Mar. 2026, Granted
        炭化珪素;MOSFET;絶縁破壊;パワーデバイス;高温動作デバイス;MOS界面
      • 学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開
        Grant-in-Aid for Scientific Research (A)
        Medium-sized Section 21:Electrical and electronic engineering and related fields
        Kyoto University
        木本 恒暢
        From 05 Apr. 2021, To 31 Mar. 2022, Discontinued
        炭化珪素;MOS界面;酸化膜;MOSFET;チャネル移動度
      • Clarification of physical properties in semi-insulating SiC wafers and fabrication of complimentary junction field-effect transistors
        Grant-in-Aid for Scientific Research (A)
        Medium-sized Section 21:Electrical and electronic engineering and related fields
        Kyoto University
        Kimoto Tsunenobu
        From 01 Apr. 2018, To 31 Mar. 2021, Project Closed
        炭化珪素;半絶縁性基板;イオン注入;電界効果トランジスタ;耐環境素子;深い準位;相補型素子;結晶欠陥
      • 超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究
        Grant-in-Aid for Scientific Research (A)
        Kyoto University
        木本 恒暢
        From 01 Apr. 2009, To 31 Mar. 2010, Project Closed
        炭化珪素;パワーデバイス;拡張欠陥;点欠陥;キャリア寿命
      • Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage
        Grant-in-Aid for Scientific Research (S)
        Kyoto University
        Tsunenobu KIMOTO
        From 11 May 2009, To 31 Mar. 2014, Project Closed
        半導体;パワーデバイス;結晶欠陥;キャリア寿命;絶縁破壊;炭化珪素;深い準位;拡張欠陥;点欠陥;PiNダイオード;接合終端
      • Design and Integration of Power Line Circuit for SiC Power Devices Considering EMC
        Grant-in-Aid for Scientific Research (B)
        Kyoto University
        Takashi HIKIHARA
        From 01 Apr. 2006, To 31 Mar. 2009, Project Closed
        SiC;パワーデバイス;EMC;回路実装;集積化
      • Study on SiC Super-Junction Power MOSFETs Utilizing Ion Implantation and Embedded Epitaxial Growth
        Grant-in-Aid for Scientific Research (A)
        Kyoto University
        Kimoto TSUNENOBU
        From 01 Apr. 2006, To 31 Mar. 2009, Project Closed
        シリコンカーバイド;パワーデバイス;超接合;MOSFET;イオン注入;埋め込み成長
      • Fundamental Study on Low-loss SiC Power Devices Using Multi pn Junctions
        Grant-in-Aid for Scientific Research (B)
        KYOTO UNIVERSITY
        Tsunenobu KIMOTO
        From 01 Apr. 2004, To 31 Mar. 2006, Project Closed
        シリコンカーバイド;パワーデバイス;MOSFET;pn接合;電界集中緩和;デバイスシミュレーション, Silicon Carbide;Power Device;MOSFET;Multi pn Junction;RESURF Structure
      • High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiC
        Grant-in-Aid for Scientific Research (B)
        KYOTO UNIVERSITY
        Tsunenobu KIMOTO
        From 01 Apr. 2001, To 31 Mar. 2003, Project Closed
        シリコンカーバイド;パワーデバイス;MOSFET;酸化膜;半導体界面;チャネル移動度, Silicon Carbide;Power Device;MOSFET;Oxide;Semiconductor Interface;Channel Mobility
      • Control of Electronic Properties of Wide Bandgap Semiconductor and Application to Energy Electronics
        Grant-in-Aid for Specially Promoted Research
        Physics
        KYOTO UNIVERSITY
        Hiroyuki MATSUNAMI
        From 01 Apr. 1997, To 31 Mar. 2001, Project Closed
        シリコンカーバイド;パワーデバイス;pn接合ダイオード;MOSFET;イオン注入;熱酸化;エピタキシャル成長;深い準位;不純物ド-ピング;フォトルミネセンス, silicon carbide;power device;pn diode;MOSFET;ion implantation;thermal oxidation
      • Topographic analyzer for electronic structures of semiconductors
        Grant-in-Aid for Scientific Research (A)
        KYOTO INSTITUTE OF TECHNOLOGY;Kyoto University
        Junji SARAIE
        From 01 Apr. 1996, To 31 Mar. 1998, Project Closed
        極微領域ホトルミネセンス像;極低温測定;極微領域電子構造;レーザー顕微鏡;半導体極微構造;ピエゾアクチュエータ;半導体特性マッピング, photoluminescence;high spatial resolution;low temperature;confocal microscope;electronic structure;piezo actuator;photoluminescence image;nano structure
      • 表面超構造制御原子層エピタキシ-のためのフリーラジカルの作製
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        松波 弘之
        From 01 Apr. 1995, To 31 Mar. 1996, Project Closed
        表面超構造;メチルラジカル;シリコンカーバイド;ガスソース分子線;ヘテロエピタキシャル成長
      • ワイドギャッブ半導体SiC/GaNヘテロ接合の作製と物性評価
        Grant-in-Aid for Encouragement of Young Scientists (A)
        Kyoto University
        木本 恒暢
        From 01 Apr. 1994, To 31 Mar. 1995, Project Closed
        シリコンカーバイド(SiC);窒化ガリウム(GaN);化学気相堆積;X線回折;ラマン散乱
      • 広禁制帯幅半導体との複合による極限高効率シリコン太陽電池の開発
        Grant-in-Aid for Developmental Scientific Research (B)
        Kyoto University
        冬木 隆
        From 01 Apr. 1994, To 31 Mar. 1996, Project Closed
        広禁制帯幅半導体;高効率太陽電池;有機金属気相成長法;タンデム型太陽電池;ヘテロエピタキシ-
      • Application of Wide Bandgap Semiconductor SiC for Power Devices
        Grant-in-Aid for Developmental Scientific Research (B)
        KYOTO UNIVERSITY
        Hiroyuki MATSUNAMI
        From 01 Apr. 1994, To 31 Mar. 1996, Project Closed
        シリコンカーバイド(SiC);パワーデバイス;熱酸化;イオン注入;Schottkyダイオード;pn接合ダイオード;MOSFET;価電子制御, Silicon Carbide;Power Device-;Thermal Oxidation;Ion Implantation;MOSFET;Schottky Barrier Diode;pn Junction Diode
      • Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy
        Grant-in-Aid for General Scientific Research (B)
        KYOTO UNIVERSITY
        Hiroyuki MATSUNAMI
        From 01 Apr. 1994, To 31 Mar. 1996, Project Closed
        有機金属分子線エピタキシ-;光励起反応;表面反応;光励起原子層エピタキシ-;その場観察;反射高速電子回折法;ガリウムリン;飽和吸着;反射高速電子線回折法;光励起プロセス;原子層エピタキシ-;質量分析;反射電子線回析;III-V族半導体, MOMBE;Photo-chemical reaction;Surface reaction;Photo-induced ALE;In-situ observation;RHEED;GaP;Saturated adsorption
      • レーザ励起による表面反応ダイナミクスの究明とエピタキシャル成長の原子層レベル制御
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        冬木 隆
        From 01 Apr. 1994, To 31 Mar. 1995, Project Closed
        有機金属;分子線エピタキシ-;ガリウムリン;光励起;反射高速電子線回折;原子層制御成長
      • 表面超構造制御原子層エピタキシ-のためのフリーラジカルの作製
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        松波 弘之
        From 01 Apr. 1994, To 31 Mar. 1995, Project Closed
        メゾスコピック構造;ラジカル;分子線エピタキシ-;シリコンカーバイド;表面超構造
      • Electronic Behavior ofWide-Gap Semiconductor and Devices
        Grant-in-Aid for international Scientific Research
        KYOTO UNIVERSITY
        Hiroyuki MATSUNAMI
        From 01 Apr. 1994, To 31 Mar. 1996, Project Closed
        シリコンカーバイド;エピタキシャル成長;フォトルミネセンス;深い準位;イオン注入;パワーデバイス;不純物ド-ピング;結晶評価, silicon carbide;epitaxial growth;photoluminescence;deep level;ion implantation;power device
      • ワイドギャップ半導体SiCへの新しい青色発光中心の添加と発光過程の解明
        Grant-in-Aid for Encouragement of Young Scientists (A)
        Kyoto University
        木本 恒暢
        From 01 Apr. 1993, To 31 Mar. 1994, Project Closed
        シリコンカーバイド(SiC);青色発光;フォトルミネセンス;CVD成長;等電子トラップ
      • レーザ誘起原子層エピタキシーによる純正III-V族半導体結晶の製作
        Grant-in-Aid for General Scientific Research (C)
        Kyoto University
        吉本 昌広
        From 01 Apr. 1993, To 31 Mar. 1994, Project Closed
        レーザ誘起反応;原子層エピタキシャル成長;ガリウムリン;その場観測;反射高速電子線回折法;有機金属分子線エピタキシャル成長法;二次イオン質量分析法;表面反応
      • 表面超構造制御原子層エピタキシーのためのフリーラジカルの作製
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        松波 弘之
        From 01 Apr. 1993, To 31 Mar. 1994, Project Closed
        表面超構造;メゾスコピック構造;原子層エピタキシー;シリコンカーバイド;ガスソース分子線成長法;しきい値イオン化質量分析法
      • 有機金属分子線成長法による光素子用ワイドギヤップ材料窒化ガリウムの純正結晶の製作
        Grant-in-Aid for General Scientific Research (C)
        Kyoto University
        吉本 昌広
        From 01 Apr. 1992, To 31 Mar. 1993, Project Closed
        有機金属分子線成長法;窒化ガリウム;超高真空;可視発光材料;有機アミン;高速反射電子線回析
      • Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices
        Grant-in-Aid for Developmental Scientific Research (B)
        KYOTO UNIVERSITY
        Hiroyuki MATSUNAMI
        From 01 Apr. 1992, To 31 Mar. 1994, Project Closed
        シリコンカーバイド(SiC);パワーデバイス;気相エピタキシ-;成長機構;イオン注入;熱酸化;pn接合ダイオード;Schottky障壁ダイオード;結晶成長;不純物ドーピング, Silicon Carbide;Power Device;Vapor Phase Epitaxy;Growth Mechanism;Thermal Oxidation;pn Junction Diode;Schottky Barrier Diode
      • 表面制御原子層エピタキシー法によるSiC純正結晶の製作と光物性制御
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        冬木 隆
        From 01 Apr. 1992, To 31 Mar. 1993, Project Closed
        シリコンカーバイド;原子層エピタキシー;表面超構造;青色発光ダイオード
      • 格子整合系複合材料を用いたシリコン太陽電池の極限高効率化
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        冬木 隆
        From 01 Apr. 1992, To 31 Mar. 1993, Project Closed
        太陽電池;シリコン;広禁制帯幅半導体;格子整合
      • 表面制御原子層エピタキシ-法によるSiC純正結晶の製作と光物性制御
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        冬木 隆
        From 01 Apr. 1991, To 31 Mar. 1992, Project Closed
        シリコンカ-バイド;原子層エピタキシ-;表面超格子;反射電子回線折法;局在中心;ステップ制御エピタキシ-
      • 格子整合系複合材料を用いたシリコン太陽電池の極限高効率化
        Grant-in-Aid for Scientific Research on Priority Areas
        Kyoto University
        冬木 隆
        From 01 Apr. 1991, To 31 Mar. 1992, Project Closed
        太陽電池;シリコン;広禁制帯幅半導体;格子整合
      • Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices
        Grant-in-Aid for Developmental Scientific Research (B)
        Kyoto University
        Hiroyuki MATSUNAMI
        From 01 Apr. 1990, To 31 Mar. 1992, Project Closed
        シリコンカ-バイド;パワ-デバイス;絶縁破壊電界;低温成長;ポリタイプ制御;ステップフロ-成長;価電子制御;低温結晶成長, silicon carbide;power device;breakdown field;low-temperature growth;polytype control;step-flow growth

      External funds: others

      • Crystal Growth of Semiconductor SiC and Material Characterization
        From 1990
      • SiC High-Power, High-Temperature Devices
      • 低炭素社会創成へ向けた炭化珪素(SiC)革新パワーエレクトロニクスの研究開発
        日本学術振興会 最先端研究開発支援プログラム
        From 2009, To 2013
        木本 恒暢
      • SiC次世代パワーエレクトロニクスの統合的研究開発
        戦略的イノベーション創造プログラム(SIP)
        From 2014, To 2019
      list
        Last Updated :2024/12/04

        Education

        Teaching subject(s)

        • From 01 Apr. 2024, To 31 Mar. 2025
          Prospects of Interdisciplinary Photonics and Electronics
          X001, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2024, To 31 Mar. 2025
          Electronic Materials, Adv.
          C813, Fall, Graduate School of Engineering, 2
        • From 01 Apr. 2024, To 31 Mar. 2025
          Semiconductor Engineering, Adv.
          C810, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2024, To 31 Mar. 2025
          Fundamentals of Electron Physics and Devices
          6015, Spring, Faculty of Engineering, 2
        • From 01 Apr. 2024, To 31 Mar. 2025
          Semiconductor Engineering
          6040, Fall, Faculty of Engineering, 2
        • From 01 Apr. 2024, To 31 Mar. 2025
          Physics WISE Program Special Lecture
          4515, Spring, Graduate School of Science, 1
        • From 01 Apr. 2023, To 31 Mar. 2024
          Semiconductor Engineering
          6040, Fall, Faculty of Engineering, 2
        • From 01 Apr. 2023, To 31 Mar. 2024
          Fundamentals of Electron Physics and Devices
          6015, Spring, Faculty of Engineering, 2
        • From 01 Apr. 2023, To 31 Mar. 2024
          Prospects of Interdisciplinary Photonics and Electronics
          X001, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2023, To 31 Mar. 2024
          Electronic Materials, Adv.
          C813, Fall, Graduate School of Engineering, 2
        • From 01 Apr. 2023, To 31 Mar. 2024
          Semiconductor Engineering, Adv.
          C810, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2023, To 31 Mar. 2024
          Physics WISE Program Special Lecture
          4515, Spring, Graduate School of Science, 1
        • From 01 Apr. 2022, To 31 Mar. 2023
          Master's Thesis
          C799, Year-long, Graduate School of Engineering, 0
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Seminar in Electronic Science and Engineering I
          C846, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Experiments and Exercises in Electronic Science and Engineering I
          C710, Year-long, Graduate School of Engineering, 4
        • From 01 Apr. 2022, To 31 Mar. 2023
          Prospects of Interdisciplinary Photonics and Electronics
          X001, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Semiconductor Engineering
          6040, Fall, Faculty of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Seminar in Electronic Science and Engineering II
          C848, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Fundamentals of Electron Physics and Devices
          6015, Spring, Faculty of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Physics WISE Program Special Lecture
          4515, Spring, Graduate School of Science, 1
        • From 01 Apr. 2022, To 31 Mar. 2023
          Research Internship (D)
          R823, Year-long, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Experiments and Exercises in Electronic Science and Engineering II
          C713, Year-long, Graduate School of Engineering, 4
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Seminar on Electronic Science and Engineering
          R701, Year-long, Graduate School of Engineering, 4
        • From 01 Apr. 2022, To 31 Mar. 2023
          Electronic Materials, Adv.
          C813, Fall, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Exercises on Electronic Science and Engineering I
          R825, Year-long, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Semiconductor Engineering, Adv.
          C810, Spring, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Research Internship(M)
          C821, Year-long, Graduate School of Engineering, 2
        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Exercises on Electronic Science and Engineering II
          R827, Year-long, Graduate School of Engineering, 2
        • From Apr. 2011, To Mar. 2012
          半導体工学特論
          Spring, 工学研究科
        • From Apr. 2011, To Mar. 2012
          電子材料学特論
          Fall, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学の展望
          Spring, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別実験及演習1
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別実験及演習2
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別セミナー
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学通論
          Fall, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別研修1(インターン)
          Spring, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別研修2(インターン)
          Spring, 工学研究科
        • From Apr. 2011, To Mar. 2012
          研究インターンシップM(融合光)
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          研究インターンシップD(融合光)
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別演習1
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          融合光・電子科学特別演習2
          Year-long, 工学研究科
        • From Apr. 2011, To Mar. 2012
          半導体工学
          Fall, 工学部
        • From Apr. 2011, To Mar. 2012
          物性・デバイス基礎論
          Spring, 工学部
        • From Apr. 2012, To Mar. 2013
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2012, To Mar. 2013
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2012, To Mar. 2013
          Research Internship (D)
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Research Internship(M)
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Master's Thesis
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Seminar on Electronic Science and Engineering
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Experiments and Exercises in Electronic Science and Engineering II
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Experiments and Exercises in Electronic Science and Engineering I
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Exercises on Electronic Science and Engineering I
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Exercises on Electronic Science and Engineering II
          Year-long, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Seminar in Electronic Science and Engineering II
          Spring, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Advanced Seminar in Electronic Science and Engineering I
          Spring, 工学研究科
        • From Apr. 2012, To Mar. 2013
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2013, To Mar. 2014
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2013, To Mar. 2014
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2013, To Mar. 2014
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2013, To Mar. 2014
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2014, To Mar. 2015
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2014, To Mar. 2015
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2014, To Mar. 2015
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2014, To Mar. 2015
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2015, To Mar. 2016
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2015, To Mar. 2016
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2015, To Mar. 2016
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2015, To Mar. 2016
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2016, To Mar. 2017
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2016, To Mar. 2017
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2016, To Mar. 2017
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2016, To Mar. 2017
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2017, To Mar. 2018
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2017, To Mar. 2018
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2017, To Mar. 2018
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2017, To Mar. 2018
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2018, To Mar. 2019
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2018, To Mar. 2019
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2018, To Mar. 2019
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2018, To Mar. 2019
          Electronic Materials, Adv.
          Fall, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Semiconductor Engineering
          Fall, 工学部
        • From Apr. 2019, To Mar. 2020
          Semiconductor Engineering, Adv.
          Spring, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Fundamentals of Electron Physics and Devices
          Spring, 工学部
        • From Apr. 2019, To Mar. 2020
          Research Internship (D)
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Research Internship(M)
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Master's Thesis
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Advanced Seminar on Electronic Science and Engineering
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Advanced Experiments and Exercises in Electronic Science and Engineering II
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Advanced Experiments and Exercises in Electronic Science and Engineering I
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Advanced Exercises on Electronic Science and Engineering I
          Year-long, 工学研究科
        • From Apr. 2019, To Mar. 2020
          Advanced Exercises on Electronic Science and Engineering II
          Year-long, 工学研究科