基本情報

学部兼担

• 工学部

学内兼務

• 研究代表者
• 運営協議会協議員

所属学協会

• 自 2021年, 至 現在

  ワイドギャップ半導体学会
• Materials Research Society
• IEEE
• 電気学会
• 電子情報通信学会
• 日本結晶成長学会
• 応用物理学会

学位

• 工学修士(京都大学)
• 博士（工学）(京都大学)

出身大学院・研究科等

• 京都大学, 大学院工学研究科修士課程電気工学第二専攻, 修了

出身学校・専攻等

• 京都大学, 工学部電気工学第二学科, 卒業

出身高等学校

• 出身高等学校

  桐蔭高等学校

経歴

• 自 1988年, 至 1990年

  アモルファスSiおよびダイヤモンド半導体の研究
• 自 1988年, 至 1990年

  Research and Devclopmant of Amophon Si and Semiconducter Diamond
• 自 1990年

  - SiCの結晶成長とデバイス応用
• 自 1990年

  - Cuystal Grouth of SiC and Deuice Applocations

使用言語

• 英語

ID,URL

• J-Global ID

  200901089736935774

researchmap URL

• https://researchmap.jp/T_Kimoto

研究

研究テーマ・研究概要

• 研究テーマ

  半導体材料とデバイス

• 研究概要

  ・SiCパワーデバイスの基礎研究　
  ・SiCの物性および欠陥物性解明　
  ・SiCを用いた厳環境集積回路の基礎研究　
  ・半導体ナノワイヤの電子状態と電気伝導　
  ・抵抗変化型メモリ用酸化物薄膜の形成と物性評価

研究キーワード

• 半導体デバイス
• 半導体材料
• Semiconductor Material

研究分野

• ものづくり技術（機械・電気電子・化学工学）, 電子デバイス、電子機器
• ものづくり技術（機械・電気電子・化学工学）, 電気電子材料工学

論文

• Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

  Shota Kozakai; Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Journal of Applied Physics, 2024年09月06日

  
• Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃

  Koji Ito; Hajime Tanaka; Masahiro Horita; Jun Suda; Tsunenobu Kimoto

  Applied Physics Express, 2024年08月01日

  
• Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors with Reduced Base Spreading Resistance

  Satoshi Asada; Jun Suda; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2019年11月01日

  
• Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

  Takuya Maeda; Tetsuo Narita; Hiroyuki Ueda; Masakazu Kanechika; Tsutomu Uesugi; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda

  Applied Physics Letters, 2019年09月30日

  
• Impact ionization coefficients of 4H-SiC in a wide temperature range

  Y. Zhao; H. Niwa; T. Kimoto

  Japanese Journal of Applied Physics, 2019年01月01日

  
• Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

  Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2019年01月01日

  この論文にアクセスする：

  
• Determination of surface recombination velocity from current-voltage characteristics in SiC p-n diodes

  Satoshi Asada; Jun Suda; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2018年11月01日

  
• Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

  Satoshi Asada; Jun Suda; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2018年08月01日

  この論文にアクセスする：

  
• Effects of parasitic region in SiC bipolar junction transistors on forced current gain

  Satoshi Asada; Jun Suda; Tsunenobu Kimoto

  Materials Science Forum, 2018年

  
• Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

  Seigo Mori; Masatoshi Aketa; Takui Sakaguchi; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto

  IEEE Journal of the Electron Devices Society, 2018年

  
• Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer

  Takeshi Tawara; Tetsuya Miyazawa; Mina Ryo; Masaki Miyazato; Takumi Fujimoto; Kensuke Takenaka; Shinichiro Matsunaga; Masaaki Miyajima; Akihiro Otsuki; Yoshiyuki Yonezawa; Tomohisa Kato; Hajime Okumura; Tsunenobu Kimoto; Hidekazu Tsuchida

  Materials Science Forum, 2017年

  
• High-temperature operation of electrostatically-excited single-crystalline 4H-SiC microcantilever resonators

  Kosuke Sato; Kohei Adachi; Hajime Okamoto; Hiroshi Yamaguchi; Tsunenobu Kimoto; Jun Suda

  Materials Science Forum, 2015年

  
• Temperature dependence of impact ionization coefficients in 4H-SiC

  Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  Materials Science Forum, 2014年

  
• High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces

  Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Electron Device Letters, 2024年07月

  
• Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

  Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2024年06月03日

  
• Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process

  Kotaro Kuwahara; Takeaki Kitawaki; Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2024年05月01日

  
• High electron mobility in heavily sulfur-doped 4H-SiC

  Mitsuaki Kaneko; Taiga Matsuoka; Tsunenobu Kimoto

  Journal of Applied Physics, 2024年05月23日

  
• Generation of deep levels near the 4H-SiC surface by thermal oxidation

  Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 2024年04月01日

  
• Origin of hole mobility anisotropy in 4H-SiC

  Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Journal of Applied Physics, 2024年02月16日

  
• Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

  Hajime Tanaka; Tsunenobu Kimoto; Nobuya Mori

  Materials Science in Semiconductor Processing, 2024年04月

  
• Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs

  Kyota Mikami; Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2024年01月

  
• Tunneling current through non-alloyed metal/heavily-doped SiC interfaces

  Masahiro Hara; Takeaki Kitawaki; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Materials Science in Semiconductor Processing, 2024年03月

  
• 350°C Operation of SiC Complementary JFET Logic Gates

  Mitsuaki Kaneko; Masashi Nakajima; Qimin Jin; Noriyuki Maeda; Tsunenobu Kimoto

  2023 IEEE CPMT Symposium Japan (ICSJ), 2023年11月15日

  
• Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs

  Xilun Chi; Keita Tachiki; Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2023年11月01日

  
• Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface

  Mitsuaki Kaneko; Hideaki Takashima; Konosuke Shimazaki; Shigeki Takeuchi; Tsunenobu Kimoto

  APL Materials, 2023年09月01日

  この論文にアクセスする：

  
• Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC

  Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  physica status solidi (b), 2023年08月17日

  
• Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy

  Kazutaka Kanegae; Tetsuo Narita; Kazuyoshi Tomita; Tetsu Kachi; Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, 2021年09月

  
• Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

  Kazutaka Kanegae; Tetsuo Narita; Kazuyoshi Tomita; Tetsu Kachi; Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  Japanese Journal of Applied Physics, 2020年04月

  
• Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

  Kazutaka Kanegae; Hajime Fujikura; Yohei Otoki; Taichiro Konno; Takehiro Yoshida; Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  Applied Physics Letters, 2019年07月01日

  
• Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate

  M. Kaneko; A. Tsibizov; T. Kimoto; U. Grossner

  IEEE Transactions on Electron Devices, 2023年04月

  
• Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

  Takeaki Kitawaki; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 2023年03月01日

  
• Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC

  Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 2023年02月01日

  
• Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation

  Taiga Matsuoka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2023年01月01日

  
• Breakdown Electric Field of GaN p⁺-n and p-n⁺ Junction Diodes With Various Doping Concentrations

  Takuya Maeda; Tetsuo Narita; Shinji Yamada; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda

  IEEE Electron Device Letters, 2022年01月, 査読有り

  
• Impact ionization coefficients and critical electric field in GaN

  Takuya Maeda; Tetsuo Narita; Shinji Yamada; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda

  Journal of Applied Physics, 2021年05月14日, 査読有り

  
• Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

  Takuya Maeda; Tetsuo Narita; Hiroyuki Ueda; Masakazu Kanechika; Tsutomu Uesugi; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda

  IEEE Electron Device Letters, 2019年06月, 査読有り

  
• Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n⁺ junction diodes

  T. Maeda; T. Narita; H. Ueda; M. Kanechika; T. Uesugi; T. Kachi; T. Kimoto; M. Horita; J. Suda

  Japanese Journal of Applied Physics, 2019年, 査読有り

  
• Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

  Kazutaka Kanegae; Takafumi Okuda; Masahiro Horita; Jun Suda; Tsunenobu Kimoto

  Journal of Applied Physics, 2021年09月14日

  
• A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

  Takafumi Okuda; Tsunenobu Kimoto; Jun Suda

  Japanese Journal of Applied Physics, 2018年04月

  
• Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

  Takuji Hosoi; Momoe Ohsako; Kidist Moges; Koji Ito; Tsunenobu Kimoto; Mitsuru Sometani; Mitsuo Okamoto; Akitaka Yoshigoe; Takayoshi Shimura; Heiji Watanabe

  Applied Physics Express, 2022年05月, 査読有り

  
• Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET

  Takuji Hosoi; Shuji Azumo; Yusaku Kashiwagi; Shigetoshi Hosaka; Kenji Yamamoto; Masatoshi Aketa; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe

  Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2017年, 査読有り

  
• Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices

  Yoshihito Katsu; Takuji Hosoi; Yuichiro Nanen; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe

  Materials Science Forum, 2016年, 査読有り

  
• Characterization of inhomogeneity in SiO2 films on 4H-SiC epitaxial substrate by a combination of Fourier transform infrared spectroscopy and cathodoluminescence spectroscopy

  Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Takuma Kobayashi; Tsunenobu Kimoto

  Materials Science Forum, 2015年06月30日, 査読有り

  
• Device performance and switching characteristics of 16 kV ultrahigh-voltage SiC flip-type n-channel IE-IGBTs

  Y. Yonezawa; T. Mizushima; K. Takenaka; H. Fujisawa; T. Deguchi; T. Kato; S. Harada; Y. Tanaka; D. Okamoto; M. Sometani; M. Okamoto; M. Yoshikawa; T. Tsutsumi; Y. Sakai; N. Kumagai; S. Matsunaga; M. Takei; M. Arai; T. Hatakeyama; K. Takao; T. Shinohe; T. Izumi; T. Hayashi; K. Nakayama; K. Asano; M. Miyajima; H. Kimura; A. Otsuki; K. Fukuda; H. Okumura; T. Kimoto

  Materials Science Forum, 2015年, 査読有り

  
• Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes

  H. Tanaka; T. Kimoto; N. Mori

  Journal of Applied Physics, 2022年06月14日

  
• Sic エピタキシャル結晶の表面ステップ構造

  木本 恒暢; 松波 弘之

  まてりあ : 日本金属学会会報, 2001年12月20日

  
• SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K

  M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto

  IEEE Electron Device Letters, 2022年07月

  
• Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process

  Keita Tachiki; Kyota Mikami; Koji Ito; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 2022年07月01日

  
• Performance Improvement and Reliability Physics in SiC MOSFETs

  T. Kimoto; K. Tachiki; A. Iijima; M. Kaneko

  2022 IEEE International Reliability Physics Symposium (IRPS), 2022年03月

  
• Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes

  Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Letters, 2022年04月25日

  
• Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates

  Katsuya Takahashi; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2022年04月

  
• Impact Ionization Coefficients in GaN Measured by Above- and Sub-E_g Illuminations for p⁻/n⁺ Junction

  Takuya Maeda; Tetsuo Narita; Shinji Yamada; Tetsu Kachi; Tsunenobu Kimoto; Masahiro Horita; Jun Suda

  2019 IEEE International Electron Devices Meeting (IEDM), 2019年12月

  
• Physics and Innovative Technologies in SiC Power Devices

  T. Kimoto; M. Kaneko; K. Tachiki; K. Ito; R. Ishikawa; X. Chi; D. Stefanakis; T. Kobayashi; H. Tanaka

  2021 IEEE International Electron Devices Meeting (IEDM), 2021年12月11日

  
• Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

  Ryoya Ishikawa; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 2021年06月01日

  
• Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC

  Euihyeon Do; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2021年06月01日, 査読有り

  
• Lateral spreads of ion-implanted Al and P atoms in silicon carbide

  Qimin Jin; Masashi Nakajima; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2021年05月01日, 査読有り

  
• Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures

  Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2021年05月01日

  
• Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current

  Keita Tachiki; Takahisa Ono; Takuma Kobayashi; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2021年03月, 査読有り

  
• Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation

  Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 2021年03月01日, 査読有り

  
• Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing

  Keita Tachiki; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2021年02月, 査読有り

  
• Defect engineering in SiC technology for high-voltage power devices

  Tsunenobu Kimoto; Heiji Watanabe

  Applied Physics Express, 2020年12月01日

  
• Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing

  Keita Tachiki; Mitsuaki Kaneko; Takuma Kobayashi; Tsunenobu Kimoto

  Applied Physics Express, 2020年12月01日, 査読有り

  
• Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

  M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto

  IEEE Transactions on Electron Devices, 2020年10月, 査読有り

  
• Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems

  Koji Ito; Takuma Kobayashi; Tsunenobu Kimoto

  Journal of Applied Physics, 2020年09月07日, 査読有り

  
• Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering

  Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto

  Thin Solid Films, 2020年09月, 査読有り

  
• Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations

  Daisuke Nakamura; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2020年09月01日, 査読有り

  
• Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation

  Takuma Kobayashi; Takafumi Okuda; Keita Tachiki; Koji Ito; Yu-ichiro Matsushita; Tsunenobu Kimoto

  Applied Physics Express, 2020年09月01日, 査読有り

  この論文にアクセスする：

  
• Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

  Dionysios Stefanakis; Xilun Chi; Takuya Maeda; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2020年09月, 査読有り

  
• Tunneling Current in 4H-SiC p-n Junction Diodes

  M. Kaneko; X. Chi; T. Kimoto

  IEEE Transactions on Electron Devices, 2020年08月, 査読有り

  
• Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications

  Hironobu AKITA; Tsunenobu KIMOTO

  IEICE Transactions on Electronics, 2020年06月01日, 査読有り

  
• Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces

  T. Umeda; Y. Nakano; E. Higa; T. Okuda; T. Kimoto; T. Hosoi; H. Watanabe; M. Sometani; S. Harada

  Journal of Applied Physics, 2020年04月14日, 査読有り

  
• Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces

  Masahiro Hara; Satoshi Asada; Takuya Maeda; Tsunenobu Kimoto

  Applied Physics Express, 2020年04月01日, 査読有り

  
• Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors

  Satoshi Asada; Jun Suda; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2020年04月, 査読有り

  
• Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors

  Hajime Tanaka; Tsunenobu Kimoto; Nobuya Mori

  APPLIED PHYSICS EXPRESS, 2020年04月, 査読有り

  
• Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes

  A. Iijima; T. Kimoto

  Applied Physics Letters, 2020年03月02日, 査読有り

  
• Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET

  Takuji Hosoi; Shuji Azumo; Yusaku Kashiwagi; Shigetoshi Hosaka; Kenji Yamamoto; Masatoshi Aketa; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe

  Japanese Journal of Applied Physics, 2020年02月01日, 査読有り

  
• Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE

  Mitsuaki Kaneko; Kazuto Hirai; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, 2020年02月01日, 査読有り

  
• Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM cells

  Naoki Kanegami; Yusuke Nishi; Tsunenobu Kimoto

  Applied Physics Letters, 2020年01月06日, 査読有り

  
• Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device

  Ei Shigematsu; Ryo Ohshima; Yuichiro Ando; Teruya Shinjo; Tsunenobu Kimoto; Masashi Shiraishi

  Solid State Communications, 2020年, 査読有り

  
• CO2アニールによるSiO2/SiC界面窒素量制御とSiC MOSFET信頼性向上

  細井卓治; 大迫桃恵; 伊藤滉二; 志村考功; 木本恒暢; 渡部平司

  2019年12月, 査読有り

  
• Dominant conduction mechanism in TaO x -based resistive switching devices

  Toshiki Miyatani; Yusuke Nishi; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2019年09月01日, 査読有り

  
• Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the <11-20> direction

  Takuya Maeda; Xilun Chi; Hajime Tanaka; Masahiro Horita; Jun Suda; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2019年08月, 査読有り

  
• Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate

  M. Nakajima; M. Kaneko; T. Kimoto

  IEEE Electron Device Letters, 2019年06月, 査読有り

  
• Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

  Takuma Kobayashi; Keita Tachiki; Koji Ito; Tsunenobu Kimoto

  Applied Physics Express, 2019年03月

  
• Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation

  Takuma Kobayashi; Yu Ichiro Matsushita; Tsunenobu Kimoto; Atsushi Oshiyama

  Japanese Journal of Applied Physics, 2019年01月

  
• Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

  Koji Ito; Takuma Kobayashi; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 2019年

  
• Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells

  Toshiki Miyatani; Yusuke Nishi; Tsunenobu Kimoto

  MRS Advances, 2019年, 査読有り

  
• SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation

  Mitsuaki Kaneko; Ulrike Grossner; Tsunenobu Kimoto

  Materials Science Forum, 2019年01月, 査読有り

  
• Microscopic mechanism of carbon annihilation upon SiC oxidation due to phosphorus treatment: Density functional calculations combined with ion mass spectrometry

  Takuma Kobayashi; Yu Ichiro Matsushita; Takafumi Okuda; Tsunenobu Kimoto; Atsushi Oshiyama

  Applied Physics Express, 2018年12月

  
• Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells

  Masaya Arahata; Yusuke Nishi; Tsunenobu Kimoto

  AIP Advances, 2018年12月, 査読有り

  この論文にアクセスする：

  
• Conductance fluctuation in NiO-based resistive switching memory

  Yusuke Nishi; Hiroki Sasakura; Tsunenobu Kimoto

  Journal of Applied Physics, 2018年10月21日, 査読有り

  
• Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

  Masashi Kato; Shinya Katahira; Yoshihito Ichikawa; Shunta Harada; Tsunenobu Kimoto

  Journal of Applied Physics, 2018年09月04日, 査読有り

  
• Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage

  Maeda Takuya; Chi Xilun; Horita Masahiro; Suda Jun; Kimoto Tsunenobu

  APPLIED PHYSICS EXPRESS, 2018年09月

  
• Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions

  Y. Ichikawa; M. Ichimura; T. Kimoto; M. Kato

  ECS J. Solid St. Sci. Technol., 2018年08月, 査読有り

  
• Estimation of Threshold Voltage in SiC Short-Channel MOSFETs

  Keita Tachiki; Takahisa Ono; Takuma Kobayashi; Hajime Tanaka; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2018年07月, 査読有り

  
• Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies

  Kanegae Kazutaka; Kaneko Mitsuaki; Kimoto Tsunenobu; Horita Masahiro; Suda Jun

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2018年07月

  
• Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

  Kanegae Kazutaka; Horita Masahiro; Kimoto Tsunenobu; Suda Jun

  APPLIED PHYSICS EXPRESS, 2018年07月

  
• Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

  Maeda Takuya; Narita Tetsuo; Kanechika Masakazu; Uesugi Tsutomu; Kachi Tetsu; Kimoto Tsunenobu; Horita Masahiro; Suda Jun

  APPLIED PHYSICS LETTERS, 2018年06月18日

  
• High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

  Kaneko M; Kimoto T

  IEEE ELECTRON DEVICE LETTERS, 2018年05月, 査読有り

  
• Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

  Sawada Naoki; Narita Tetsuo; Kanechika Masakazu; Uesugi Tsutomu; Kachi Tetsu; Horita Masahiro; Kimoto Tsunenobu; Suda Jun

  APPLIED PHYSICS EXPRESS, 2018年04月

  
• Progress and future challenges of SiC power devices and process technology

  T. Kimoto; H. Niwa; N. Kaji; T. Kobayashi; Y. Zhao; S. Mori; M. Aketa

  Technical Digest - International Electron Devices Meeting, IEDM, 2018年01月23日

  
• Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

  Tanaka H; Asada S; Kimoto T; Suda J

  Journal of Applied Physics, 2018年, 査読有り

  
• Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires

  Tanaka H; Suda J; Kimoto T

  Journal of Applied Physics, 2018年, 査読有り

  
• Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0)

  Kaneko M; Ueta S; Horita M; Kimoto T; Suda J

  APPLIED PHYSICS LETTERS, 2018年01月01日, 査読有り

  
• Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation

  T. Okuda; T. Miyazawa; H. Tsuchida; T. Kimoto; J. Suda

  JOURNAL OF ELECTRONIC MATERIALS, 2017年11月, 査読有り

  
• TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

  Daisuke Nakamura; Taishi Kimura; Tetsuo Narita; Akitoshi Suzumura; Tsunenobu Kimoto; Kenji Nakashima

  JOURNAL OF CRYSTAL GROWTH, 2017年11月, 査読有り

  
• High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch

  Seigo Mori; Masatoshi Aketa; Takui Sakaguchi; Yuichiro Nanen; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017年10月, 査読有り

  
• Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

  Satoshi Asada; Tsunenobu Kimoto; Ivan G. Ivanov

  APPLIED PHYSICS LETTERS, 2017年08月, 査読有り

  
• Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar

  Takuma Kobayashi; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2017年08月, 査読有り

  
• Effect of Postoxidation Nitridation on Forward Current-Voltage Characteristics in 4H-SiC Mesa p-n Diodes Passivated With SiO2

  Satoshi Asada; Tsunenobu Kimoto; Jun Suda

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017年07月, 査読有り

  
• Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates

  Hiroaki Fujihara; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2017年07月, 査読有り

  
• Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy

  Hirofumi Seki; Masanobu Yoshikawa; Takuma Kobayashi; Tsunenobu Kimoto; Yukihiro Ozaki

  Applied Spectroscopy, 2017年05月01日

  
• Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode

  Takuya Maeda; Masaya Okada; Masaki Ueno; Yoshiyuki Yamamoto; Tsunenobu Kimoto; Masahiro Horita; Jun Suda

  APPLIED PHYSICS EXPRESS, 2017年05月, 査読有り

  
• Interface properties of NO-annealed 4H-SiC (0001), (11(2)over-bar0), and (1(1)over-bar00) MOS structures with heavily doped p-bodies

  Takuma Kobayashi; Seiya Nakazawa; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2017年04月, 査読有り

  
• Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature

  Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto

  AIP ADVANCES, 2017年04月, 査読有り

  この論文にアクセスする：

  
• Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation

  Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017年03月, 査読有り

  
• Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

  Akifumi Iijima; Isaho Kamata; Hidekazu Tsuchida; Jun Suda; Tsunenobu Kimoto

  PHILOSOPHICAL MAGAZINE, 2017年, 査読有り

  
• Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation

  Tanaka H; Suda J; Kimoto T

  IEEE Transactions on Nanotechnology, 2017年, 査読有り

  
• Phonon frequencies of a highly strained AIN layer coherently grown on 6H-SiC (0001)

  Kaneko M; Kimoto T; Suda J

  AIP ADVANCES, 2017年01月, 査読有り

  この論文にアクセスする：

  
• Control of carbon vacancy in SiC toward ultrahigh-voltage power devices

  T. Kimoto; K. Kawahara; B. Zippelius; E. Saito; J. Suda

  SUPERLATTICES AND MICROSTRUCTURES, 2016年11月, 査読有り

  
• Promise and Challenges of High-Voltage SiC Bipolar Power Devices

  Tsunenobu Kimoto; Kyosuke Yamada; Hiroki Niwa; Jun Suda

  ENERGIES, 2016年11月, 査読有り

  この論文にアクセスする：

  
• Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories

  Yusuke Nishi; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2016年09月, 査読有り

  
• Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model

  Hajime Tanaka; Jun Suda; Tsunenobu Kimoto

  Solid-State Electronics, 2016年09月, 査読有り

  
• Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method

  Masanobu Yoshikawa; Kenichi Kosaka; Hirohumi Seki; Tsunenobu Kimoto

  APPLIED SPECTROSCOPY, 2016年07月, 査読有り

  
• Bulk and epitaxial growth of silicon carbide

  Tsunenobu Kimoto

  PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2016年06月, 査読有り

  
• Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing

  Eiji Saito; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2016年06月, 査読有り

  
• Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing

  Takafumi Okuda; Takuma Kobayashi; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2016年05月, 査読有り

  
• Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE

  Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016年05月, 査読有り

  
• Interface state density of SiO2/p-type 4H-SiC (0001), (11(2)over-bar0), (1(1)over-bar00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

  Takuma Kobayashi; Seiya Nakazawa; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2016年04月, 査読有り

  
• Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires

  Hajime Tanaka; Jun Suda; Tsunenobu Kimoto

  Physical Review B, 2016年04月, 査読有り

  
• Hall scattering factors in p-type 4H-SiC with various doping concentrations

  Asada Satoshi; Okuda Takafumi; Kimoto Tsunenobu; Suda Jun

  Appl. Phys. Express, 2016年03月03日

  
• Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

  Atsushi Tanaka; Hirofumi Matsuhata; Naoyuki Kawabata; Daisuke Mori; Kei Inoue; Mina Ryo; Takumi Fujimoto; Takeshi Tawara; Masaki Miyazato; Masaaki Miyajima; Kenji Fukuda; Akihiro Ohtsuki; Tomohisa Kato; Hidekazu Tsuchida; Yoshiyuki Yonezawa; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2016年03月, 査読有り

  
• Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy

  Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2016年02月, 査読有り

  
• Ion Implantation Technology in SiC for High-Voltage/High-Temperature Devices

  T. Kimoto; K. Kawahara; N. Kaji; H. Fujihara; J. Suda

  2016 16th International Workshop on Junction Technology (IWJT), 2016年, 査読有り

  
• Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires

  Hajime Tanaka; Jun Suda; Tsunenobu Kimoto

  2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016年, 査読有り

  
• Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET

  Seigo Mori; Masatoshi Aketa; Takui Sakaguchi; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto

  2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016年, 査読有り

  
• Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing

  Takafumi Okuda; Takuma Kobayashi; Tsunenobu Kimoto; Jun Suda

  2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016年, 査読有り

  
• Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process

  Hiroki Sasakura; Yusuke Nishi; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2015年12月, 査読有り

  
• Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy

  Tetsuo Hatakeyama; Mitsuru Sometani; Kenji Fukuda; Hajime Okumura; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2015年11月, 査読有り

  
• Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC

  Takafumi Okuda; Giovanni Alfieri; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2015年11月, 査読有り

  
• Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

  Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015年10月, 査読有り

  
• Characterization of traps in SiC/SiO

  Hatakeyama Tetsuo; Sometani Mitsuru; Fukuda Kenji; Okumura Hajime; Kimoto Tsunenobu

  Jpn. J. Appl. Phys., 2015年09月30日

  
• Characterization of Thermal Oxides on 4H Silicon Carbide (4H-SiC) Epitaxial Substrate Using Fourier Transform Infrared Spectroscopy.

  Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Takuma Kobayashi; Tsunenobu Kimoto

  Applied spectroscopy, 2015年09月01日

  
• Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime

  Naoki Kaji; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2015年09月, 査読有り

  
• Dominant conduction mechanism in NiO-based resistive memories

  Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2015年06月, 査読有り

  
• Temperature dependence of current gain in 4H-SiC bipolar junction transistors

  Satoshi Asada; Takafumi Okuda; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2015年04月, 査読有り

  
• Material science and device physics in SiC technology for high-voltage power devices

  Kimoto Tsunenobu

  Jpn. J. Appl. Phys., 2015年03月23日

  
• Development of Ultrahigh-Voltage SiC Devices

  Kenji Fukuda; Dai Okamoto; Mitsuo Okamoto; Tadayoshi Deguchi; Tomonori Mizushima; Kensuke Takenaka; Hiroyuki Fujisawa; Shinsuke Harada; Yasunori Tanaka; Yoshiyuki Yonezawa; Tomohisa Kato; Shuji Katakami; Manabu Arai; Manabu Takei; Shinichiro Matsunaga; Kazuto Takao; Takashi Shinohe; Toru Izumi; Toshihiko Hayashi; Syuuji Ogata; Katsunori Asano; Hajime Okumura; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015年02月, 査読有り

  
• Interface Properties of 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOS Structures Annealed in NO

  Seiya Nakazawa; Takafumi Okuda; Jun Suda; Takashi Nakamura; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015年02月, 査読有り

  
• Influence of conduction-type on thermal oxidation rate in SiC(0001) with various doping densities

  Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto

  Materials Science Forum, 2015年

  
• Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs

  Hiroaki Fujihara; Naoya Morioka; Hajime Tanaka; Jun Suda; Tsunenobu Kimoto

  2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015年, 査読有り

  
• Impacts of Surface Roughness Scattering on Hole Mobility in Germanium Nanowires

  Hajime Tanaka; Jun Suda; Tsunenobu Kimoto

  2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015年, 査読有り

  
• Impact of conduction type and doping density on thermal oxidation rate of SiC(0001)

  Kobayashi Takuma; Suda Jun; Kimoto Tsunenobu

  Appl. Phys. Express, 2014年11月13日

  
• Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers

  Toshihiko Hayashi; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2014年11月, 査読有り

  
• Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy

  Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Yuichiro Nanen; Tsunenobu Kimoto

  APPLIED SPECTROSCOPY, 2014年10月, 査読有り

  
• Temperature dependence of optical absorption coefficient of 4H- and 6H-SiC from room temperature to 300 °C

  Watanabe Naoki; Kimoto Tsunenobu; Suda Jun

  Jpn. J. Appl. Phys., 2014年09月22日

  
• Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing

  Takafumi Okuda; Tetsuya Miyazawa; Hidekazu Tsuchida; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2014年08月, 査読有り

  
• Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps

  Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS LETTERS, 2014年08月, 査読有り

  この論文にアクセスする：

  
• Conduction-type dependence of thermal oxidation rate on SiC(0001)

  Takuma Kobayashi; Jun Suda; Tsunenobu Kimoto

  IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai, 2014年07月28日

  
• Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires

  Hajime Tanaka; Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, 2014年06月, 査読有り

  
• 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0)

  Masahiro Horita; Masato Noborio; Tsunenobu Kimoto; Jun Suda

  IEEE ELECTRON DEVICE LETTERS, 2014年03月, 査読有り

  
• <大学の研究・動向>新しい材料・構造・概念がもたらす半導体デバイスの革新

  木本 恒暢; 須田 淳; 西 佑介

  Cue : 京都大学電気関係教室技術情報誌, 2014年03月

  この論文にアクセスする：

  
• Detection of minority carrier traps in p-type 4H-SiC

  G. Alfieri; T. Kimoto

  APPLIED PHYSICS LETTERS, 2014年03月, 査読有り

  
• Effect of ultrathin AIN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2014年03月, 査読有り

  
• Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging

  Chihiro Kawahara; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2014年02月, 査読有り

  
• Ab initio prediction of SiC nanotubes with negative strain energy

  G. Alfieri; T. Kimoto

  APPLIED PHYSICS LETTERS, 2014年01月, 査読有り

  
• Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas

  Naoya Morioka; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2014年01月, 査読有り

  
• Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements

  Hironori Yoshioka; Takashi Nakamura; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2014年01月, 査読有り

  
• Development of Ultrahigh Voltage SiC Power Devices

  Kenji Fukuda; Dai Okamoto; Shinsuke Harada; Yasunori Tanaka; Yoshiyuki Yonezawa; Tadayoshi Deguchi; Shuji Katakami; Hitoshi Ishimori; Shinji Takasu; Manabu Arai; Kensuke Takenaka; Hiroyuki Fujisawa; ManabuTakei; Kazushi Matsumoto; Naoyuki Ohse; Mina Ryo; Chiharu Ota; Kazuto Takao; Makoto Mizukami; Tomohisa Kato; Toru Izumi; Toshihiko Hayashi; Koji Nakayama; Katsunori Asano; Hajime Okumura; Tsunenobu Kimoto

  2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014年

  
• Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

  Yuichiro Nanen; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-selective Electrochemical Etching

  Kosuke Sato; Kohei Adachi; Hajime Okamoto; Hiroshi Yamaguchi; Tsunenobu Kimoto; Jun Suda

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility

  Hironori Yoshioka; Takashi Nakamura; Junji Senzaki; Atsushi Shimozato; Yasunori Tanaka; Hajime Okumura; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Progress and Future Challenges of Silicon Carbide Devices for Integrated Circuits

  Tsunenobu Kimoto

  2014 IEEE PROCEEDINGS OF THE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2014年, 査読有り

  
• Minority Carrier Transient Spectroscopy of As-grown, Electron Irradiated and Thermally Oxidized p-type 4H-SiC

  Giovanni Alfieri; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Orientation and Size Effects on Phonon-limited Hole Mobility in Rectangular Cross-sectional Germanium Nanowires

  Hajime Tanaka; Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto

  2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2014年, 査読有り

  
• Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation

  Naoki Kaji; Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations

  X. T. Trinh; K. Szasz; T. Hornos; K. Kawahara; J. Suda; T. Kimoto; A. Gali; E. Janzen; N. T. Son

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

  Tanaka H; Mori S; Morioka N; Suda J; Kimoto T

  Journal of Applied Physics, 2014年, 査読有り

  この論文にアクセスする：

  
• Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

  Tanaka H; Morioka N; Mori S; Suda J; Kimoto T

  Journal of Applied Physics, 2014年, 査読有り

  この論文にアクセスする：

  
• Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 degrees C and 1500 degrees C and Measurements of Lifetime and Photoluminescence

  W. M. Klahold; R. P. Devaty; W. J. Choyke; K. Kawahara; T. Kimoto; T. Ohshima

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT

  Tomonori Mizushima; Kensuke Takenaka; Hiroyuki Fujisawa; Tomohisa Kato; Shinsuke Harada; Yasunori Tanaka; Mitsuo Okamoto; Mitsuru Sometani; Dai Okamoto; Naoki Kumagai; Shinichiro Matsunaga; Tadayoshi Deguchi; Manabu Arai; Tetsuo Hatakeyama; Youichi Makifuchi; Tsuyoshi Araoka; Naoyuki Oose; Takashi Tsutsumi; Mitsuru Yoshikawa; Katsumi Tatera; Atsushi Tanaka; Syuji Ogata; Koji Nakayama; Toshihiko Hayashi; Katsunori Asano; Masayuki Harashima; Yukio Sano; Eisuke Morisaki; Manabu Takei; Masaaki Miyajima; Hiroshi Kimura; Akihiro Otsuki; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura; Tsunenobu Kimoto

  2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014年, 査読有り

  
• Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge

  T. Hatakeyama; M. Sometani; K. Fukuda; H. Okumura; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014年, 査読有り

  
• Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

  X. T. Trinh; K. Szász; T. Hornos; K. Kawahara; J. Suda; T. Kimoto; A. Gali; E. Janzén; N. T. Son

  Physical Review B - Condensed Matter and Materials Physics, 2013年12月26日, 査読有り

  
• Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates

  Hiroki Miyake; Koichi Amari; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2013年12月, 査読有り

  
• Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation

  Takafumi Okuda; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, 2013年12月, 査読有り

  
• AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013年09月, 査読有り

  
• Single-crystalline 4H-SiC micro cantilevers with a high quality factor

  Kohei Adachi; Naoki Watanabe; Hajime Okamoto; Hiroshi Yamaguchi; Tsunenobu Kimoto; Jun Suda

  SENSORS AND ACTUATORS A-PHYSICAL, 2013年08月, 査読有り

  この論文にアクセスする：

  
• Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

  Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2013年08月, 査読有り

  
• Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime

  Naoki Kaji; Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2013年07月, 査読有り

  
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)

  Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2013年06月, 査読有り

  
• Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy

  Masahiko Aoki; Hitoshi Kawanowa; Gan Feng; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2013年06月, 査読有り

  
• Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC

  Daisuke Hirano; Tsunenobu Kimoto; Yoshihiko Kanemitsu

  JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2013年06月, 査読有り

  
• SiCパワーMOSFET向け高誘電率ゲート絶縁膜技術 (依頼講演)

  細井 卓治; 東雲 秀司; 柏木 勇作; 保坂 重敏; 中村 亮太; 中野 佑紀; 浅原 浩和; 中村 孝; 木本 恒暢; 志村 考功; 渡部 平司

  電子情報通信学会 シリコン材料・デバイス(SDM)研究会（応用物理学会、シリコンテクノロジー分科会との合同開催）, 2013年06月, 査読有り, 招待有り

  
• Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC

  Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2013年05月, 査読有り

  
• Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H-SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy

  Masanobu Yoshikawa; Hirohund Seki; Tsuneyuki Yamane; Yuichiro Nanen; Muneharu Kato; Tsunenobu Kimoto

  APPLIED SPECTROSCOPY, 2013年05月, 査読有り

  
• First-principles study of Cl diffusion in cubic SiC

  G. Alfieri; T. Kimoto

  Journal of Applied Physics, 2013年04月07日, 査読有り

  この論文にアクセスする：

  
• Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

  G. Alfieri; T. Kimoto

  APPLIED PHYSICS LETTERS, 2013年04月, 査読有り

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• Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells

  Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2013年04月, 査読有り

  
• Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

  Koutarou Kawahara; Xuan Thang Trinh; Nguyen Tien Son; Erik Janzen; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2013年03月, 査読有り

  この論文にアクセスする：

  
• Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

  Yuichiro Nanen; Muneharu Kato; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013年03月, 査読有り

  
• Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs

  Seigo Mori; Naoya Morioka; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013年03月, 査読有り

  
• Characterization of silicon dioxide films on 4H-SiC (0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy

  M. Yoshikawa; K. Inoue; H. Seki; Y. Nanen; M. Kato; T. Kimoto

  APPLIED PHYSICS LETTERS, 2013年02月, 査読有り

  この論文にアクセスする：

  
• E-1/E-2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

  A. Koizumi; V. P. Markevich; N. Iwamoto; S. Sasaki; T. Ohshima; K. Kojima; T. Kimoto; K. Uchida; S. Nozaki; B. Hamilton; A. R. Peaker

  APPLIED PHYSICS LETTERS, 2013年01月, 査読有り

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• Deep levels generated by thermal oxidation in p-type 4H-SiC

  Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2013年01月, 査読有り

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• Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals

  Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2013年01月, 査読有り

  
• Size and geometric effects on conduction band structure of GaAs nanowires

  Hajime Tanaka; Naoya Morioka; Seigo Mori; Jun Suda; Tsunenobu Kimoto

  IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai, 2013年, 査読有り

  
• Diffusion study of chlorine in SiC by first principles calculations

  Giovanni Alfieri; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013年, 査読有り

  
• Determination of the Electrical Capture Process of the EH6-Center in n-type 4H-SiC

  Jonas Weber; Svetlana Beljakowa; Heiko B. Weber; Gerhard Pensl; Bernd Zippelius; Tsunenobu Kimoto; Michael Krieger

  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013年, 査読有り

  
• Deep-level-transient spectroscopy characterization of mobility-limiting traps in SiO2/SiC interfaces on C-face 4H-SiC

  T. Hatakeyama; T. Shimizu; T. Suzuki; Y. Nakabayashi; H. Okumura; T. Kimoto

  Materials Science Forum, 2013年, 査読有り

  
• Laplace transform deep level transient spectroscopy study of the EH6/7 center

  Giovanni Alfieri; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2012, 2013年, 査読有り

  
• Persistent photoconductivity in p-type 4H-SiC bulk crystals

  Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  Materials Science Forum, 2013年, 査読有り

  
• Ultrahigh Voltage SiC Bipolar Devices

  Kenji Fukuda; Dai Okamoto; Shinsuke Harada; Yasunori Tanaka; Yoshiyuki Yonezawa; Tadayoshi Deguchi; Shuji Katakami; Hitoshi Ishimori; Shinji Takasu; Manabu Arai; Kensuke Takenaka; Hiroyuki Fujisawa; Manabu Takei; Kazushi Matsumoto; Naoyuki Ohse; Mina Ryo; Chiharu Ota; Kazuto Takao; Makoto Mizukami; Tomohisa Kato; Toru Izumi; Toshihiko Hayashi; Koji Nakayama; Katsunori Asano; Hajime Okumura; Tsunenobu Kimoto

  2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2013年

  
• AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上

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  電子情報通信学会 シリコン材料・デバイス研究会（SDM）, 2013年01月, 査読有り, 招待有り

  
• Low V-f and Highly Reliable 16 kV Ultrahigh Voltage SiC Flip-Type n-channel Implantation and Epitaxial IGBT

  Yoshiyuki Yonezawa; Tomonori Mizushima; Kensuke Takenaka; Hiroyuki Fujisawa; Tomohisa Kato; Shinsuke Harada; Yasunori Tanaka; Mitsuo Okamoto; Mitsuru Sometani; Dai Okamoto; Naoki Kumagai; Shinichiro Matsunaga; Tadayoshi Deguchi; Manabu Arai; Tetsuo Hatakeyama; Youichi Makifuchi; Tsuyoshi Araoka; Naoyuki Oose; Takashi Tsutsumi; Mitsuru Yoshikawa; Katsumi Tatera; Masayuki Harashima; Yukio Sano; Eisuke Morisaki; Manabu Takei; Masaaki Miyajima; Hiroshi Kimura; Akihiro Otsuki; Kenji Fukuda; Hajime Okumura; Tsunenobu Kimoto

  2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013年, 査読有り

  
• Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of nio-based resistive switching cells

  Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto; Tsunenobu Kimoto

  Materials Research Society Proceedings, 2013年01月, 査読有り

  
• 超高耐圧ＳｉＣ ＰｉＮダイオードの作製と低オン抵抗化

  梶直樹; 丹羽弘樹; 須田淳; 木本恒暢

  電子情報通信学会技術研究報告, 2012年11月30日

  
• The Effects of Transverse Electric Fields on the Electronic Properties of SiC Nanostructures

  G. Alfieri; T. Kimoto

  JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2012年11月, 査読有り

  
• Thermo-Optic Coefficients of 4H-SiC, GaN, and AIN for Ultraviolet to Infrared Regions up to 500 degrees C

  Naoki Watanabe; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2012年11月, 査読有り

  
• 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

  Hiroki Miyake; Takafumi Okuda; Hiroki Niwa; Tsunenobu Kimoto; Jun Suda

  IEEE ELECTRON DEVICE LETTERS, 2012年11月, 査読有り

  
• Negative-U System of Carbon Vacancy in 4H-SiC

  N. T. Son; X. T. Trinh; L. S. Lovlie; B. G. Svensson; K. Kawahara; J. Suda; T. Kimoto; T. Umeda; J. Isoya; T. Makino; T. Ohshima; E. Janzen

  PHYSICAL REVIEW LETTERS, 2012年10月, 査読有り

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• Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy

  Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2012年10月, 査読有り

  
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes

  Shuhei Ichikawa; Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2012年10月, 査読有り

  
• Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

  Hiroki Niwa; Gan Feng; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012年10月, 査読有り

  
• Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers

  T. Hayashi; K. Asano; J. Suda; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年09月, 査読有り

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• Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

  G. Alfieri; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年09月, 査読有り

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• Thermal instability effects in SiC Power MOSFETs

  Alberto Castellazzi; Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara

  MICROELECTRONICS RELIABILITY, 2012年09月, 査読有り

  
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 degrees C

  Naoki Watanabe; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2012年09月, 査読有り

  
• Generation of very fast states by nitridation of the SiO2/SiC interface

  Hironori Yoshioka; Takashi Nakamura; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年07月, 査読有り

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• 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

  Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2012年06月, 査読有り

  
• Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC

  S. Sasaki; J. Suda; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年05月, 査読有り

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• Theoretical study of Cl-related defect complexes in cubic SiC

  G. Alfieri; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年05月, 査読有り

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• AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy

  Ryosuke Kikuchi; Hironori Okumura; Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2012年05月, 査読有り

  
• Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities

  Takafumi Okuda; Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2012年04月, 査読有り

  
• Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

  F. Yan; R. P. Devaty; W. J. Choyke; A. Gali; T. Kimoto; T. Ohshima; G. Pensl

  APPLIED PHYSICS LETTERS, 2012年03月, 査読有り

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• Analytical model for reduction of deep levels in SiC by thermal oxidation

  Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年03月, 査読有り

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• <教室通信>博士課程前後期連携教育プログラムについて

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  Cue : 京都大学電気関係教室技術情報誌, 2012年03月

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• Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

  Katsunori Danno; Hiroaki Saitoh; Akinori Seki; Takayuki Shirai; Hiroshi Suzuki; Takeshi Bessho; Yoichiro Kawai; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2012年03月, 査読有り

  
• Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

  M. Yoshikawa; S. Ogawa; K. Inoue; H. Seki; Y. Tanahashi; H. Sako; Y. Nanen; M. Kato; T. Kimoto

  APPLIED PHYSICS LETTERS, 2012年02月, 査読有り

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• High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

  Bernd Zippelius; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年02月, 査読有り

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• Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy

  Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2012年02月, 査読有り

  
• Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012年02月, 査読有り

  
• Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

  Hironori Yoshioka; Takashi Nakamura; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2012年01月, 査読有り

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• Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices

  T. Kimoto; J. Suda; G. Feng; H. Miyake; K. Kawahara; H. Niwa; T. Okuda; S. Ichikawa; Y. Nishi

  GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012年, 査読有り

  
• Performance and Reliability Improvement in SiC Power MOSFETs by Implementing AlON High-k Gate Dielectrics

  Takuji Hosoi; Shuji Azumo; Yusaku Kashiwagi; Shigetoshi Hosaka; Ryota Nakamura; Shuhei Mitani; Yuki Nakano; Hirokazu Asahara; Takashi Nakamura; Tsunenobu Kimoto; Takayoshi Shimura; Heiji Watanabe

  2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012年, 査読有り

  
• Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes

  Hiroki Niwa; Jun Suda; Tsunenobu Kimoto

  IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 2012年, 査読有り

  
• Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model

  Koutarou Kawahara; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC

  R. P. Devaty; Fei Yan; W. J. Choyke; A. Gali; T. Kimoto; T. Ohshima

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?

  Bernd Zippelius; Alexander Glas; Heiko B. Weber; Gerhard Pensl; Tsunenobu Kimoto; Michael Krieger

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals

  S. Sasaki; J. Suda; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Diffusion and gettering of transition metals in 4H-SiC

  K. Danno; H. Saitoh; A. Seki; T. Shirai; H. Suzuki; T. Bessho; Y. Kawai; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Enhanced Current Gain (> 250) in 4H-SiC Bipolar Junction Transistors by A Deep-Level-Reduction Process

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

  Hiroki Niwa; Gan Feng; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

  B. Zippelius; J. Suda; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• Chlorine in SiC: Experiment and Theory

  G. Alfieri; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012年, 査読有り

  
• 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価(シリコン関連材料の作製と評価)

  岩田 達哉; 西 佑介; 木本 恒暢

  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 2011年12月09日

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• 抵抗変化型メモリ用Ｐｔ／ＮｉＯ／Ｐｔ素子におけるフィラメント形成領域の特定とその評価

  岩田達哉; 西佑介; 木本恒暢; 木本恒暢

  電子情報通信学会技術研究報告, 2011年12月09日

  
• 長方形断面Ｓｉナノワイヤの伝導帯構造の断面形状およびサイズ依存性

  森誠語; 森岡直也; 須田淳; 木本恒暢

  電子情報通信学会技術研究報告, 2011年12月09日

  
• 接合終端構造の改良による１５ｋＶ級ＳｉＣ ＰｉＮダイオードの実現

  丹羽弘樹; FENG Gan; 須田淳; 木本恒暢

  電子情報通信学会技術研究報告, 2011年12月09日

  
• Ab initio study of isolated chlorine defects in cubic SiC

  G. Alfieri; T. Kimoto

  JOURNAL OF PHYSICS-CONDENSED MATTER, 2011年10月, 査読有り

  
• A study of SiC Power BJT performance and robustness

  A. Castellazzi; T. Takuno; R. Onishi; T. Funaki; T. Kimoto; T. Hikihara

  MICROELECTRONICS RELIABILITY, 2011年09月, 査読有り

  
• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal-Oxide-Semiconductor Devices

  Masato Noborio; Michael Grieb; Anton J. Bauer; Dethard Peters; Peter Friedrichs; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2011年09月, 査読有り

  
• 高効率電力変換用SiCパワーデバイス

  木本 恒暢

  應用物理, 2011年08月10日, 査読有り

  
• Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2011年08月, 査読有り

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• Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures

  Tatsuya Iwata; Yusuke Nishi; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2011年08月, 査読有り

  
• Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy

  Shunsaku Ueta; Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011年07月, 査読有り

  
• 4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on (0001)

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  IEEE ELECTRON DEVICE LETTERS, 2011年07月, 査読有り

  
• Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation

  Hiromi Kaneko; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2011年06月, 査読有り

  この論文にアクセスする：

  
• Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers

  T. Hayashi; K. Asano; J. Suda; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2011年06月, 査読有り

  この論文にアクセスする：

  
• Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy

  Masanobu Yoshikawa; Hirohumi Seki; Keiko Inoue; Keiko Matsuda; Yusaku Tanahashi; Hideki Sako; Yuihiro Nanen; Muneharu Kato; Tsunenobu Kimoto

  APPLIED SPECTROSCOPY, 2011年05月, 査読有り

  
• Silicon Carbide

  Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl

  Silicon Carbide, 2011年04月28日, 査読有り

  
• Preface

  Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl

  Silicon Carbide, 2011年04月28日, 査読有り

  
• Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation

  Tsunenobu Kimoto; Katsunori Danno; Jun Suda

  Silicon Carbide, 2011年04月28日, 査読有り

  
• Silicon Carbide

  Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl

  Silicon Carbide, 2011年03月28日, 査読有り

  
• High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen

  B. Zippelius; S. Beljakowa; M. Krieger; G. Pensl; S. A. Reshanov; M. Noborio; T. Kimoto; V. V. Afanas'ev

  Silicon Carbide, 2011年03月28日, 査読有り

  
• 4H-SiC MISFETs with Nitrogen-Containing Insulators

  Masato Noborio; Jun Suda; Svetlana Beljakowa; Michael Krieger; Tsunenobu Kimoto

  Silicon Carbide, 2011年03月28日, 査読有り

  
• Preface

  Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl

  Silicon Carbide, 2011年03月28日, 査読有り

  
• Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors

  Gerhard Pensl; Svetlana Beljakowa; Thomas Frank; Kunyuan Gao; Florian Speck; Thomas Seyller; Lothar Ley; Florin Ciobanu; Valery Afanas'ev; Andre Stesmans; Tsunenobu Kimoto; Adolf Schöner

  Silicon Carbide, 2011年03月28日, 査読有り

  
• Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations

  G. Alfieri; T. Kimoto

  APPLIED PHYSICS LETTERS, 2011年03月, 査読有り

  この論文にアクセスする：

  
• Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure

  Naoya Morioka; Hironori Yoshioka; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2011年03月, 査読有り

  この論文にアクセスする：

  
• Bandgap shift by quantum confinement effect in < 100 > Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations

  Hironori Yoshioka; Naoya Morioka; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2011年03月, 査読有り

  この論文にアクセスする：

  
• Origin of Etch Hillocks Formed on On-Axis SiC(000(1)over-bar) Surfaces by Molten KOH Etching

  Jun Suda; Haruki Shoji; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2011年03月, 査読有り

  
• Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

  Masashi Kato; Hidenori Ono; Masaya Ichimura; Gan Feng; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2011年03月, 査読有り

  
• Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in N2O or NO

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  IEEE ELECTRON DEVICE LETTERS, 2011年03月, 査読有り

  
• The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC

  G. Alfieri; T. Kimoto

  JOURNAL OF PHYSICS-CONDENSED MATTER, 2011年02月, 査読有り

  この論文にアクセスする：

  
• Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth

  Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2011年02月, 査読有り

  
• 高耐圧パワーデバイス応用を目指したSiCのエピタキシャル成長と欠陥制御

  木本 恒暢; 須田 淳

  真空, 2011年, 査読有り

  
• Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers

  Massimo Camarda; Andrea Canino; Antonino La Magna; Francesco La Via; G. Feng; T. Kimoto; M. Aoki; H. Kawanowa

  APPLIED PHYSICS LETTERS, 2011年01月, 査読有り

  この論文にアクセスする：

  
• Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers

  T. Hayashi; K. Asano; J. Suda; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2011年01月, 査読有り

  この論文にアクセスする：

  
• Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC

  S. Sasaki; K. Kawahara; G. Feng; G. Alfieri; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2011年01月, 査読有り

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• Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

  Yusuke Nishi; Tatsuya Iwata; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2011年01月, 査読有り

  
• Epitaxial growth and defect control of SiC for high-voltage power devices

  Tsunenobu Kimoto; Jun Suda

  Journal of the Vacuum Society of Japan, 2011年, 査読有り

  
• Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC

  Atsushi Koizumi; Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Tsunenobu Kimoto; Kazuo Uchida; Shinji Nozaki

  SILICON CARBIDE AND RELATED MATERIALS 2010, 2011年, 査読有り

  
• Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  SILICON CARBIDE AND RELATED MATERIALS 2010, 2011年, 査読有り

  
• Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature

  Muneharu Kato; Yuichiro Nanen; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2010, 2011年, 査読有り

  
• Impact of carrier lifetimes on non-destructive mapping of dislocations in 4H-SiC epilayers

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2010, 2011年, 査読有り

  
• Electrically active defects in electron irradiated p-type 6H-SiC

  Giovanni Alfieri; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2010, 2011年, 査読有り

  
• Correlation between oxygen composition and electrical properties in NiO thin films for resistive random access memory

  Yusuke Nishi; Tatsuya Iwata; Tsunenobu Kimoto

  Materials Research Society Symposium Proceedings, 2010年12月24日, 査読有り

  
• Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers

  Tsunenobu Kimoto; Toru Hiyoshi; Toshihiko Hayashi; Jun Suda

  JOURNAL OF APPLIED PHYSICS, 2010年10月, 査読有り

  この論文にアクセスする：

  
• Demonstration of Common-Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  IEEE ELECTRON DEVICE LETTERS, 2010年09月, 査読有り

  この論文にアクセスする：

  
• Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC

  Koutarou Kawahara; Jun Suda; Gerhard Pensl; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2010年08月, 査読有り

  この論文にアクセスする：

  
• Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF ELECTRONIC MATERIALS, 2010年08月, 査読有り

  この論文にアクセスする：

  
• Engineering the band gap of SiC nanotubes with a transverse electric field

  G. Alfieri; T. Kimoto

  APPLIED PHYSICS LETTERS, 2010年07月, 査読有り

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• Deep levels induced by reactive ion etching in n- and p-type 4H-SiC

  Koutarou Kawahara; Michael Krieger; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2010年07月, 査読有り

  この論文にアクセスする：

  
• Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001)

  Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010年, 査読有り

  
• Shallow defects observed in as-grown and electron-irradiated or He+-implanted Al-doped 4H-SiC epilayers

  S. Beljakowa; S. A. Reshanov; B. Zippelius; M. Krieger; G. Pensl; K. Danno; T. Kimoto; S. Onoda; T. Ohshima; Fei Yan; R. P. Devaty; W. J. Choyke

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

  G. Alfieri; T. Kimoto; G. Pensl

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• New lines and issues associated with deep defect spectra in electron, proton and He-4 ion irradiated 4H SiC

  F. Yan; R. P. Devaty; W. J. Choyke; T. Kimoto; T. Ohshima; G. Pensl; A. Gali

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons

  M. Weidner; L. Trapaidze; G. Pensl; S. A. Reshanov; A. Schoener; H. Itoh; T. Ohshima; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons

  F. Yan; R. P. Devaty; W. J. Choyke; K. Danno; G. Alfieri; T. Kimoto; S. Onoda; T. Ohshima; S. A. Reshanov; S. Beljakowa; B. Zippelius; G. Pensl

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate

  G. Feng; J. Suda; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides

  M. Grieb; M. Noborio; D. Peters; A. J. Bauer; P. Friedrichs; T. Kimoto; H. Ryssel

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Reactive-Ion-Etching Induced Deep Levels Observed in n-type and p-type 4H-SiC

  K. Kawahara; G. Alfieri; M. Krieger; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

  T. Kimoto; G. Feng; T. Hiyoshi; K. Kawahara; M. Noborio; J. Suda

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

  Masato Noborio; Michael Grieb; Anton J. Bauer; Dethard Peters; Peter Friedrichs; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Detection and Electrical Characterization of Defects at the SiO2/4H-SiC: Interface

  Michael Krieger; Svetlana Beljakowa; Bernd Zippelius; Valeri V. Afanas'ev; Anton J. Bauer; Yuichiro Nanen; Tsunenobu Kimoto; Gerhard Pensl

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs

  Y. Nanen; B. Zippelius; S. Beljakowa; L. Trapaidze; M. Krieger; T. Kimoto; G. Pensl

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-type and p-type 4H-SiC

  K. Kawahara; G. Alfieri; T. Hiyoshi; G. Pensl; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons

  S. A. Reshanov; S. Beljakowa; B. Zippelius; G. Pensl; K. Danno; G. Alfieri; T. Kimoto; S. Onoda; T. Ohshima; Fei Yan; R. P. Devaty; W. J. Choyke

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Temperature and Injection Level Dependencies of Carrier Lifetimes in p-type and n-type 4H-SiC Epilayers

  T. Hayashi; K. Asano; J. Suda; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010年, 査読有り

  
• Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation

  Tsunenobu Kimoto; Yuichiro Nanen; Toshihiko Hayashi; Jun Suda

  APPLIED PHYSICS EXPRESS, 2010年, 査読有り

  この論文にアクセスする：

  
• Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

  Jun Suda; Kazuki Yamaji; Yuichirou Hayashi; Tsunenobu Kimoto; Kenji Shimoyama; Hideo Namita; Satoru Nagao

  APPLIED PHYSICS EXPRESS, 2010年, 査読有り

  この論文にアクセスする：

  
• Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2010年, 査読有り

  この論文にアクセスする：

  
• Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00)

  Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2010年, 査読有り

  この論文にアクセスする：

  
• Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal-Oxide-Semiconductor Field-Effect Transistors

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2010年, 査読有り

  この論文にアクセスする：

  
• Characterization of major in-grown stacking faults in 4H-SiC epilayers

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  PHYSICA B-CONDENSED MATTER, 2009年12月, 査読有り

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• Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching

  Jun Suda; Naoki Watanabe; Katsuhiko Fukunaga; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2009年11月, 査読有り

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• Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure

  Yuichiro Nanen; Hironori Yoshioka; Masato Noborio; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009年11月, 査読有り

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• Thermal stability of deep levels between room temperature and 1500 degrees C in as-grown 3C-SiC

  G. Alfieri; H. Nagasawa; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2009年10月, 査読有り

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• 4H-SiC MISFETs with nitrogen-containing insulators

  Masato Noborio; Jun Suda; Svetlana Beljakowa; Michael Krieger; Tsunenobu Kimoto

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009年10月, 査読有り

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• High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen

  B. Zippelius; S. Beljakowa; M. Krieger; G. Pensl; S. A. Reshanov; M. Noborio; T. Kimoto; V. V. Afanas'ev

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009年10月, 査読有り

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• A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching

  Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2009年10月, 査読有り

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• Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

  Toru Hiyoshi; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2009年09月, 査読有り

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• Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions

  Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS EXPRESS, 2009年09月, 査読有り

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• In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

  Kazuhiro Akiyama; Yasuhiro Ishii; Sohei Abe; Hisashi Murakami; Yoshinao Kumagai; Hironori Okumura; Tsunenobu Kimoto; Jun Suda; Akinori Koukitu

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2009年09月, 査読有り

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• P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009年09月, 査読有り

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• Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors

  Hironori Yoshioka; Naoya Morioka; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2009年08月, 査読有り

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• 1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar)

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  IEEE ELECTRON DEVICE LETTERS, 2009年08月, 査読有り

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• The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study

  G. Alfieri; T. Kimoto

  NANOTECHNOLOGY, 2009年07月, 査読有り

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• Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

  Koutarou Kawahara; Giovanni Alfieri; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2009年07月, 査読有り

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• Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

  Atsushi Koizumi; Jun Suda; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2009年07月, 査読有り

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• Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures

  Hironori Okumura; Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009年06月, 査読有り

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• Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices

  Tsuyoshi Funaki; Nathabhat Phankong; Tsunenobu Kimoto; Takashi Hikihara

  IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009年05月, 査読有り

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• Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

  Toru Hiyoshi; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2009年04月, 査読有り

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• Triple Shockley type stacking faults in 4H-SiC epilayers

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2009年03月, 査読有り

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• Systematic Investigation of c-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates

  Jun Suda; Hiroki Miyake; Koichi Amari; Yuki Nakano; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2009年02月, 査読有り

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• Electronic properties of finite-length silicon carbide nanotubes

  G. Alfieri; T. Kimoto

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009年02月, 査読有り

  この論文にアクセスする：

  
• Single versus double ion implantation a deep level study

  G. Alfieri; T. Kimoto

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009年02月, 査読有り

  この論文にアクセスする：

  
• Determination of the thermo-optic coefficients of GaN and AlN up to 515 degrees C

  Naoki Watanabe; Tsunenobu Kimoto; Jun Suda

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009年, 査読有り

  
• High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and non-Basal Faces

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Deep Levels Generated by Ion-implantation in n- and p-type 4H-SiC

  Koutarou Kawahara; Giovanni Alfieri; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

  Yuichiro Nanen; Hironori Yoshioka; Masato Noborio; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Spatial Profiling of Planar Defects in 4H-SiC Epilayers using Micro-photoluminescence Mapping

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-oxidation of the N-/Al-coimplanted Surface Layer

  S. A. Reshanov; S. Beljakowa; T. Frank; B. Zippelius; M. Krieger; G. Pensl; M. Noborio; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-thin AlN Layer at Emitter-junction

  Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes

  Giovanni Alfieri; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N(2)O or NO

  M. Grieb; M. Noborio; D. Peters; A. J. Bauer; P. Friedrichs; T. Kimoto; H. Ryssel

  SILICON CARBIDE AND RELATED MATERIALS 2008, 2009年, 査読有り

  
• Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

  S. A. Reshanov; G. Pensl; K. Danno; T. Kimoto; S. Hishiki; T. Ohshima; Fei Yan; R. P. Devaty; W. J. Choyke

  SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009年, 査読有り

  
• Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO(2) Stack Gate Structures

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009年, 査読有り

  
• Search for hydrogen related defects in p-type 6H and 4H-SiC

  G. Alfieri; T. Kimoto

  Materials Science Forum, 2009年, 査読有り

  
• Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

  Toru Hiyoshi; Tsutomu Hori; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009年, 査読有り

  
• High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

  Takeyoshi Masuda; Shin Harada; Takashi Tsuno; Yasuo Namikawa; Tsunenobu Kimoto; Ki Mot

  SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009年, 査読有り

  
• The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C

  Naoki Watanabe; Tsunenobu Kimoto; Jun Suda

  JOURNAL OF APPLIED PHYSICS, 2008年11月, 査読有り

  この論文にアクセスする：

  
• N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2008年11月, 査読有り

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• Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching

  Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2008年11月, 査読有り

  この論文にアクセスする：

  
• Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing

  Kazuki Yamaji; Masato Noborio; Jun Suda; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2008年10月, 査読有り

  この論文にアクセスする：

  
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS EXPRESS, 2008年10月, 査読有り

  この論文にアクセスする：

  
• Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN

  H. Okumura; M. Horita; T. Kimoto; J. Suda

  APPLIED SURFACE SCIENCE, 2008年09月, 査読有り

  この論文にアクセスする：

  
• Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model

  Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara

  IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008年09月, 査読有り

  この論文にアクセスする：

  
• A study on electro thermal response of SiC power module during high temperature operation

  Tsuyoshi Funaki; Akira Nishio; Tsunenobu Kimoto; Takashi Hikihara

  IEICE ELECTRONICS EXPRESS, 2008年08月, 査読有り

  この論文にアクセスする：

  
• Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth

  Masahiro Horita; Tsunenobu Kimoto; Jun Suda

  APPLIED PHYSICS LETTERS, 2008年08月, 査読有り

  この論文にアクセスする：

  
• 4H-SiC MIS capacitors and MISFETs with deposited SiN(x)/SiO(2) stack-gate structures

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008年08月, 査読有り

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• Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes

  Toru Hiyoshi; Tsutomu Hori; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008年08月, 査読有り

  この論文にアクセスする：

  
• Special issue on silicon carbide devices and technology

  Jian H. Zhao; Gerhard Pensl; Tsunenobu Kimoto; Hiroyuki Matsunami; Hajime Kosugi; James A. Cooper; Maurice Weiner

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008年08月, 査読有り

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• High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC

  Giovanni Alfieri; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2008年07月, 査読有り

  この論文にアクセスする：

  
• Evidence for a hydrogen-related defect in implanted p-type 4H-SiC

  G. Alfieri; T. Kimoto

  NEW JOURNAL OF PHYSICS, 2008年07月, 査読有り

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• Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations

  Kei Senga; Tsunenobu Kimoto; Jun Suda

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2008年07月, 査読有り

  この論文にアクセスする：

  
• Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

  Gerhard Pensl; Svetlana Beljakowa; Thomas Frank; Kunyuan Gao; Florian Speck; Thomas Seyller; Lothar Ley; Florin Ciobanu; Valery V. Afanas'ev; Andre Stesmans; Tsunenobu Kimoto; Adolf Schoener

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008年07月, 査読有り

  この論文にアクセスする：

  
• Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

  Tsunenobu Kimoto; Katsunori Danno; Jun Suda

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008年07月, 査読有り

  この論文にアクセスする：

  
• Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

  Gan Feng; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2008年06月, 査読有り

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• High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

  Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara

  IEICE ELECTRONICS EXPRESS, 2008年03月, 査読有り

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• Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation

  A. Oowadaa; M. Takeuchi; Y. Sakai; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008年03月, 査読有り

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• Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

  Mitsuaki Takeuchi; Toshihiko Kojima; Atsushi Oowada; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Sigeki Sakai; Tsunenobu Kimoto

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008年03月, 査読有り

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• Direct determination of Burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography

  Daisuke Nakamura; Satoshi Yamaguchi; Yoshiharu Hirose; Toshihiko Tani; Kazumasa Takatori; Kentarou Kajiwara; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2008年01月, 査読有り

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• Energy distribution measurements of silicon field emitter arrays with a hemispherical energy analyzer

  Yoshiki Sakai; Atsushi Oowada; Mitsuaki Takeuchi; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai; Tsunenobu Kimoto

  Journal of the Vacuum Society of Japan, 2008年, 査読有り

  
• Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

  S. A. Reshanov; G. Pensl; K. Danno; T. Kimoto; S. Hishiki; T. Ohshima; H. Itoh; Fei Yan; R. P. Devaty; W. J. Choyke

  JOURNAL OF APPLIED PHYSICS, 2007年12月, 査読有り

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• Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (DOI:10.1016/j.jcrysgro.2007.05.009)

  Tsutomu Hori; Katsunori Danno; Tsunenobu Kimoto

  Journal of Crystal Growth, 2007年10月15日, 査読有り

  
• Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET

  Tsuyoshi Funaki; Tsunenobu Kimoto; Takashi Hikihara

  IEICE ELECTRONICS EXPRESS, 2007年08月, 査読有り

  この論文にアクセスする：

  
• Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

  Tsutomu Hori; Katsunori Danno; Tsunenobu Kimoto

  JOURNAL OF CRYSTAL GROWTH, 2007年08月, 査読有り

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• Thermal stability of defects in p-type as-grown 6H-SiC

  G. Alfieri; T. Kimoto

  JOURNAL OF PHYSICS-CONDENSED MATTER, 2007年08月, 査読有り

  この論文にアクセスする：

  
• Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing

  Yuki Negoro; Tsunenobu Kimoto; Hiroyuki Matsunami; Gerhard Pensl

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007年08月, 査読有り

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• Power conversion with SiC devices at extremely high ambient temperatures

  Tsuyoshi Funaki; Juan Carlos Balda; Jeremy Junghans; Avinash S. Kashyap; H. Alan Mantooth; Fred Barlow; Tsunenobu Kimoto; Takashi Hikihara

  IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007年07月, 査読有り

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• Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

  Daisuke Nakamura; Satoshi Yamaguchi; Itaru Gunjishima; Yoshiharu Hirose; Tsunenobu Kimoto

  JOURNAL OF CRYSTAL GROWTH, 2007年06月, 査読有り

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• Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC

  Giovanni Alfieri; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2007年05月, 査読有り

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• Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers

  Katsunori Danno; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2007年05月, 査読有り

  この論文にアクセスする：

  
• Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

  Katsunori Danno; Daisuke Nakamura; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2007年05月, 査読有り

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• 4H-SiC lateral double RESURF MOSFETs with low ON resistance

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007年05月, 査読有り

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• A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy

  J. Suda; M. Horita; R. Armitage; T. Kimoto

  JOURNAL OF CRYSTAL GROWTH, 2007年04月, 査読有り

  この論文にアクセスする：

  
• Impacts of growth parameters on deep levels in n-type 4H-SiC

  Katsunori Danno; Tsutomu Hori; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2007年03月, 査読有り

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• m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

  R. Armitage; M. Horita; J. Suda; T. Kimoto

  JOURNAL OF APPLIED PHYSICS, 2007年02月, 査読有り

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• Reduction in potential barrier height of AlGaN/GaN heterostructures by SiN passivation

  N. Onojima; M. Higashiwaki; J. Suda; T. Kimoto; T. Mimura; T. Matsui

  JOURNAL OF APPLIED PHYSICS, 2007年02月, 査読有り

  
• Control of the flatband voltage of 4H-SiC metal-oxide semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum

  Thomas Frank; Svetlana Beljakowa; Gerhard Pensl; Tsunenobu Kimoto; Valery V. Afanas'ev

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Deep levels in electron-irradiated n- and p-type 4H-SiC investigated by deep level transient Spectroscopy

  Katsunori Danno; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Lateral 4H-SiC MOSFETs with low on-resistance by using two-zone double RESURF structure

  Masato Noborio; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Growth and electrical characterization of 4H-SiC epilayers

  T. Kimoto; K. Danno; T. Hori; H. Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Isochronal annealing study of deep levels in hydrogen implanted p-type 4H-SiC

  G. Alfieri; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Interface properties of SiO2/4H-SiC(0001) with large off-angles formed by N2O oxidation

  Hiroaki Saitoh; Akinori Seki; Akira Manabe; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Low trap concentration and low basal-plane dislocation density in 4H-SiC,Epilayers grown at high growth rate

  T. Hori; K. Danno; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Impact of acceptor concentration on electronic properties of n(+)-GaN/p(+)-SiC heterojunction for GaN/SiC heterojunction bipolar transistor

  Koichi Amari; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2006, 2007年, 査読有り

  
• Crystal growth

  Noboru Ohtani; Takao Nakamura; Hitoshi Sumiya; Fumio Hasegawa; Seiji Sarayama; Takashi Taniguchi; Kenji Watanabe; Shinsuke Fujiwara; Yasube Kashiwaba; Ikuo Niikura; Tsunenobu Kimoto; Takashi Egawa; Hideyo Okushi; Kentaro Onabe; Kazuyuki Tadatomo; Kazumasa Hiramatsu; Akihiko Yoshikawa; Hideo Kawanishi; Katsuhiro Akimoto; Takafumi Yao; Takashi Hanada

  Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices, 2007年, 査読有り

  
• Reduction of threading dislocations in nonpolar 4H-AIN on 4H-SiC (11(2)over-bar0) grown by molecular-beam epitaxy with slightly Al-rich conditions

  M. Horita; J. Suda; T. Kimoto

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007年, 査読有り

  
• XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation

  N. Onojima; M. Higashiwaki; T. Matsui; T. Mimura; J. Suda; T. Kimoto

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007年, 査読有り

  
• Long time operation of Si:C field emitter arrays in H₂ gas atmosphere

  A. Oowada; T. Kojima; M. Takeuchi; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto

  Shinku/Journal of the Vacuum Society of Japan, 2007年, 査読有り

  
• Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons

  Katsunori Danno; Tsunenobu Kimoto

  JOURNAL OF APPLIED PHYSICS, 2006年12月, 査読有り

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• Epitaxial growth of 4H-SiC{0001} and reduction of deep levels

  T. Kimoto; K. Wada; K. Danno

  SUPERLATTICES AND MICROSTRUCTURES, 2006年10月, 査読有り

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• Source of surface morphological defects formed on 4H-SiC homoepitaxial films

  Tatsuya Okada; Kengo Ochi; Hiroyuki Kawahara; Takuro Tomita; Shigeki Matsuo; Makoto Yamaguchi; Kouichi Higashimine; Tsunenobu Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006年10月, 査読有り

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• High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy

  Masahiro Horita; Jun Suda; Tsunenobu Kimoto

  APPLIED PHYSICS LETTERS, 2006年09月, 査読有り

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• Optical cross sections of deep levels in 4H-SiC

  M. Kato; S. Tanaka; M. Ichimura; E. Arai; S. Nakamura; T. Kimoto; R. Paessler

  JOURNAL OF APPLIED PHYSICS, 2006年09月, 査読有り

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• Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage

  Tsuyoshi Funaki; Shuntaro Matsuzaki; Tsunenobu Kimoto; Takashi Hikihara

  IEICE ELECTRONICS EXPRESS, 2006年08月, 査読有り

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• Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition

  K Wada; T Kimoto; K Nishikawa; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2006年06月, 査読有り

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• Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

  S Kamiyama; T Maeda; Y Nakamura; M Iwaya; H Amano; Akasaki, I; H Kinoshita; T Furusho; M Yoshimoto; T Kimoto; J Suda; A Henry; IG Ivanov; JP Bergman; B Monemar; T Onuma; SF Chichibu

  JOURNAL OF APPLIED PHYSICS, 2006年05月, 査読有り

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• Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment

  Hirofumi Suto; Shunjiro Fujii; Nobuhiko Miyamae; Robert D. Armitage; Jun Suda; Tsunenobu Kimoto; Shin-ichi Honda; Mitsuhiro Katayama

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006年05月, 査読有り

  この論文にアクセスする：

  
• Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth

  R Armitage; J Suda; T Kimoto

  SURFACE SCIENCE, 2006年04月, 査読有り

  この論文にアクセスする：

  
• High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers

  K Danno; T Kimoto

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006年03月, 査読有り

  この論文にアクセスする：

  
• Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates

  R Armitage; J Suda; T Kimoto

  APPLIED PHYSICS LETTERS, 2006年01月, 査読有り

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• Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics

  Y Negoro; T Kimoto; M Kataoka; Y Takeuchi; RK Malhan; H Matsunami

  MICROELECTRONIC ENGINEERING, 2006年01月, 査読有り

  この論文にアクセスする：

  
• Reduction of on-resistance in 4H-SiC Multi-RESURF MOSFETs

  Masato Noborio; Yuki Negoro; Jun Suda; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006年, 査読有り

  
• Kick-out phenomena in epitaxially boron- and aluminum-doped 4H-SIC during implantation and annealing processes

  Y. Negoro; T. Kimoto; H. Matsunami; G. Pensl

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy

  T. Tomita; S. Matsuo; T. Okada; T. Kimoto; T. Mitani; S.-I. Nakashima

  Materials Science Forum, 2006年, 査読有り

  
• SiC migration enhanced embedded epitaxial (ME3) growth technology

  Y. Takeuchi; M. Kataoka; T. Kimoto; H. Matsunami; R. K. Malhan

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors

  Jun Suda; Yuki Nakano; Syouta Shimada; Kouichi Amari; Tsunenobu Kimoto

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N2O annealing

  T. Kimoto; H. Kawano; M. Noborio; J. Suda; H. Matsunami

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Origin of surface morphological defects in 4H-SiC homoepitaxial films

  Tatsuya Okada; Kouichi Okamoto; Kengo Ochi; Kouichi Higashimine; Tsunenobu Kimoto

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition

  Hiroaki Saitoh; Akira Manabe; Tsunenobu Kimoto

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Nitrogen implantation - an alternative technique to reduce traps at SiC/SiO(2)-interfaces

  Florin Ciobanu; Thomas Frank; Gerhard Pensl; Valery V. Afanas'ev; Sheron Shamuilia; Adolf Schoner; Tsunenobu Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006年, 査読有り

  
• 半導体デバイスの研究に関する顕著な業績

  木本 恒暢

  米国電気電子工学会シニアメンバー 木本 恒暢教授（電子工学専攻）平成18 年1 月21 日受賞, 2006年, 査読有り

  
• Impact of III/V ratio on polytype and crystalline quality of AIN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy

  M. Horita; J. Suda; T. Kimoto

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006年, 査読有り

  
• Epitaxial growth of 4H-SiC on 4 degrees off-axis (0001) and (000-1) substrates by hot-wall CVD

  Keiji Wada; Tsunenobu Kimoto; Kimito Nishikawa; Hiroyuki Matsunami

  Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006年, 査読有り

  
• Deep hole traps in As-grown 4H-SiC epilayers investigated by deep level transient spectroscopy

  K. Danno; T. Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006年, 査読有り

  
• Dose designing and fabrication of 4H-SiC double RESURF MOSFETs

  M. Noborio; J. Suda; T. Kimoto

  PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006年, 査読有り

  
• Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

  T Tomita; S Matsuo; T Okada; T Kimoto; H Matsunami; T Mitani; SI Nakashima

  APPLIED PHYSICS LETTERS, 2005年12月, 査読有り

  この論文にアクセスする：

  
• Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001)

  R Armitage; K Nishizono; J Suda; T Kimoto

  JOURNAL OF CRYSTAL GROWTH, 2005年11月, 査読有り

  この論文にアクセスする：

  
• 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET

  T Kimoto; H Kawano; J Suda

  IEEE ELECTRON DEVICE LETTERS, 2005年09月, 査読有り

  
• Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs

  M Noborio; Y Kanzaki; J Suda; T Kimoto

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005年09月, 査読有り

  この論文にアクセスする：

  
• Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

  H Fujiwara; T Kimoto; T Tojo; H Matsunami

  APPLIED PHYSICS LETTERS, 2005年08月, 査読有り

  この論文にアクセスする：

  
• Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)

  Y Negoro; T Kimoto; H Matsunami

  JOURNAL OF APPLIED PHYSICS, 2005年08月, 査読有り

  この論文にアクセスする：

  
• Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition

  H Fujiwara; K Danno; T Kimoto; T Tojo; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2005年08月, 査読有り

  
• Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask

  Y Chen; T Kimoto; Y Takeuchi; RK Malhan; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005年07月, 査読有り

  この論文にアクセスする：

  
• Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition

  K Danno; T Kimoto; K Asano; Y Sugawara; H Matsunami

  JOURNAL OF ELECTRONIC MATERIALS, 2005年04月, 査読有り

  この論文にアクセスする：

  
• Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation

  T Kimoto; Y Kanzaki; M Noborio; H Kawano; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005年03月, 査読有り

  この論文にアクセスする：

  
• Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy

  K Danno; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2005年03月, 査読有り

  この論文にアクセスする：

  
• Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

  Tsuyoshi Funaki; Juan C. Balda; Jeremy Junghans; Anuwat Jangwanitlert; Sharmila Mounce; Fred D. Barlow; H. Alan Mantooth; Tsunenobu Kimoto; Takashi Hikihara

  IEICE ELECTRONICS EXPRESS, 2005年02月, 査読有り

  この論文にアクセスする：

  
• Short-Channel Effects in 4H-SiC MOSFETs

  M Noborio; Y Kanzaki; J Suda; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing

  Y Negoro; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication

  H Kawano; T Kimoto; J Suda; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD

  A Wada; T Kimoto; K Nishikawa; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Technological aspects of ion implantation in SiC device processes

  Y Negoro; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes

  H Fujiwara; T Kimoto; T Tojo; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• 4H-SiC epitaxial growth on SiC substrates with various off-angles

  H Saitoh; T Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS

  K Danno; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition

  M Kato; S Tanaka; M Ichimura; E Arai; S Nakamura; T Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2004, 2005年, 査読有り

  この論文にアクセスする：

  
• Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)

  T Kimoto; H Kosugi; J Suda; Y Kanzaki; H Matsunami

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005年01月, 査読有り

  この論文にアクセスする：

  
• Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor

  Y. Nakano; J. Suda; T. Kimoto

  Physica Status Solidi C: Conferences, 2005年, 査読有り

  
• 1200 V-class 4H-SiC RIESURF MOSFETs with low on-resistances

  T Kimoto; H Kawano; J Suda

  PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2005年, 査読有り

  
• Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers

  R Armitage; K Nishizono; J Suda; T Kimoto

  GaN, AIN, InN and Their Alloys, 2005年, 査読有り

  
• Electrical activation of high-concentration aluminum implanted in 4H-SiC

  Y Negoro; T Kimoto; H Matsunami; F Schmid; G Pensl

  JOURNAL OF APPLIED PHYSICS, 2004年11月, 査読有り

  この論文にアクセスする：

  
• Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001)

  S Nakamura; T Kimoto; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2004年10月, 査読有り

  この論文にアクセスする：

  
• Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature

  T Okada; Y Negoro; T Kimoto; K Okamoto; N Kujime; N Tanaka; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004年10月, 査読有り

  この論文にアクセスする：

  
• Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

  Y Negoro; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2004年09月, 査読有り

  この論文にアクセスする：

  
• Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition

  Y Chen; T Kimoto; Y Takeuchi; RK Malhan; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004年07月, 査読有り

  この論文にアクセスする：

  
• Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition

  K Danno; K Hashimoto; H Saitoh; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004年07月, 査読有り

  この論文にアクセスする：

  
• Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)

  Y Negoro; K Katsumoto; T Kimoto; H Matsunami

  JOURNAL OF APPLIED PHYSICS, 2004年07月, 査読有り

  この論文にアクセスする：

  
• Robust 4H-SiC pn diodes fabricated using (1120) face

  Y Negoro; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004年02月, 査読有り

  この論文にアクセスする：

  
• Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap

  Y Negoro; K Katsumoto; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient

  Y Kanzaki; H Kinbara; H Kosugi; J Suda; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy

  N Onojima; J Kaido; J Suda; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• 600V 4H-SiC RESURF-type JFET

  K Fujikawa; S Harada; A Ito; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face

  K Danno; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Homoepltaxlal growth of 4H-SiC on trenched substrates by chemical vapor deposition

  Y. Chen; T. Kimoto; Y. Takeuchi; R.K. Malhan; H. Matsunami

  Materials Science Forum, 2004年, 査読有り

  
• 4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET)

  J Kaido; T Kimoto; J Suda; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Origin of leakage current in SiC Schottky barrier diodes at high temperature

  HS Saitoh; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face

  Y Negoro; K Katsumoto; T Kimoto; H Matsunami; F Schmid; G Pensl

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition

  H Fujiwara; K Danno; T Kimoto; T Tojo; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films

  T Okada; T Kimoto; K Yamai; H Matsunami; F Inoko

  SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Homoepitaxial growth on 4H-SiC {0001}-vicinal faces

  Shun-Ichi Nakamura; Tsunenobu Kimoto; Hiroyuki Matsunami

  Zairyo/Journal of the Society of Materials Science, Japan, 2004年, 査読有り

  
• SiC JFET dc characteristics under extremely high ambient temperatures

  Tsuyoshi Funaki; Takashi Hikihara; Tsunenobu Kimoto; Juan C. Balda; Jeremy Junghans; Avinash S. Kashyap; Fred D. Barlow; H. Alan Mantooth

  IEICE Electronics Express, 2004年, 査読有り

  
• Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces

  S Nakamura; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004年, 査読有り

  この論文にアクセスする：

  
• Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8)

  T Kimoto; K Hashimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003年12月, 査読有り

  この論文にアクセスする：

  
• 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication

  N Onojima; J Suda; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2003年12月, 査読有り

  この論文にアクセスする：

  
• Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

  T Okada; T Kimoto; K Yamai; H Matsunami; F Inoko

  MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2003年11月, 査読有り

  この論文にアクセスする：

  
• Hetero-interface properties of SiO2/4H-SiC on various crystal orientations

  H Matsunami; T Kimoto; H Yano

  IEICE TRANSACTIONS ON ELECTRONICS, 2003年10月, 査読有り

  この論文にアクセスする：

  
• Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps

  S Nakamura; T Kimoto; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2003年09月, 査読有り

  この論文にアクセスする：

  
• Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions

  S Nakamura; T Kimoto; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2003年09月, 査読有り

  この論文にアクセスする：

  
• Effect of C/Si ratio on spiral growth on 6H-SiC (0001)

  S Nakamura; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003年07月, 査読有り

  この論文にアクセスする：

  
• Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition

  K Fujihira; T Kimoto; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2003年07月, 査読有り

  この論文にアクセスする：

  
• Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition

  Y Chen; T Kimoto; Y Takeuchi; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2003年06月, 査読有り

  この論文にアクセスする：

  
• Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface

  T Kimoto; T Hirao; K Fujihira; H Kosugi; K Danno; H Matsunami

  APPLIED SURFACE SCIENCE, 2003年06月, 査読有り

  この論文にアクセスする：

  
• Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers

  M Miura; S Nakamura; J Suda; T Kimoto; H Matsunami

  IEEE ELECTRON DEVICE LETTERS, 2003年05月, 査読有り

  この論文にアクセスする：

  
• Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition

  T Kimoto; T Hirao; S Nakazawa; H Shiomi; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2003年02月, 査読有り

  この論文にアクセスする：

  
• High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

  A. Schöner; K. Fujihira; T. Kimoto; H. Matsunami

  Materials Science Forum, 2003年, 査読有り

  
• Complete Micropipe Dissociation in 4H-SiC(033̄8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

  T. Kimoto; K. Danno; K. Fujihira; H. Shiomi; H. Matsunami

  Materials Science Forum, 2003年, 査読有り

  
• Wide-Area Homoepltaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition

  S.-I. Nakamura; T. Kimoto; H. Matsunami

  Materials Science Forum, 2003年, 査読有り

  
• Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

  H. Saitoh; T. Kimoto; H. Matsunami

  Materials Science Forum, 2003年, 査読有り

  
• SiC Epitaxy on Non-Standard Surfaces

  H. Matsunami; T. Kimoto

  Materials Science Forum, 2003年, 査読有り

  
• SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth

  M. Miura; S.-I. Nakamura; J. Suda; T. Kimoto; H. Matsunami

  Materials Science Forum, 2003年, 査読有り

  
• High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes

  T Kimoto; K Fujimiza; H Shiomi; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003年01月, 査読有り

  この論文にアクセスする：

  
• High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation

  Y Negoro; T Kimoto; H Matsunami

  ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2003年, 査読有り

  この論文にアクセスする：

  
• Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy

  N. Onojima; J. Suda; T. Kimoto; H. Matsunami

  Physica Status Solidi C: Conferences, 2003年, 査読有り

  
• Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy

  N. Onojima; J. Suda; T. Kimoto; H. Matsunami

  Physica Status Solidi C: Conferences, 2003年, 査読有り

  
• Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)

  H Yano; T Hirao; T Kimoto; H Matsunami; H Shiomi

  APPLIED PHYSICS LETTERS, 2002年12月, 査読有り

  この論文にアクセスする：

  
• Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film

  T Okada; T Kimoto; H Noda; T Ebisui; H Matsunami; F Inoko

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002年11月, 査読有り

  この論文にアクセスする：

  
• Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation

  Y Negoro; N Miyamoto; T Kimoto; H Matsunami

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002年09月, 査読有り

  この論文にアクセスする：

  
• Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces

  H Yano; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2002年07月, 査読有り

  この論文にアクセスする：

  
• Anisotropy in breakdown field of 4H-SiC

  S Nakamura; H Kumagai; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2002年05月, 査読有り

  この論文にアクセスする：

  
• High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition

  S Nakamura; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002年05月, 査読有り

  この論文にアクセスする：

  
• High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

  T Kimoto; N Miyamoto; A Schoner; A Saitoh; H Matsunami; K Asano; Y Sugawara

  JOURNAL OF APPLIED PHYSICS, 2002年04月, 査読有り

  この論文にアクセスする：

  
• Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates

  Y Chen; T Kimoto; Y Takeuchi; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2002年04月, 査読有り

  この論文にアクセスする：

  
• High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition

  S Nakazawa; T Kimoto; K Hashimoto; H Matsunami

  JOURNAL OF CRYSTAL GROWTH, 2002年04月, 査読有り

  この論文にアクセスする：

  
• High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

  K Fujihira; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2002年03月, 査読有り

  この論文にアクセスする：

  
• Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC

  SI Nakamura; H Kumagai; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition

  J Suda; S Nakamura; M Miura; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition

  S Nakamura; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Recent achievements and future challenges in SiC homoepitaxial growth

  T Kimoto; S Nakazawa; K Fujihira; T Hirao; S Nakamura; Y Chen; K Hashimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure

  J Suda; S Nakamura; M Miura; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002年01月, 査読有り

  この論文にアクセスする：

  
• 4H-SiC MOSFETs on (03(3)over-bar8) face

  T Hirao; H Yano; T Kimoto; H Matsunami; H Shiomi

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  
• Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0)

  Y Negoro; N Miyamoto; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation

  Y Negoro; N Miyamoto; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission

  O Shigiltchoff; T Kimoto; D Hobgood; PG Neudeck; LM Porter; RP Devaty; WJ Choyke

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching

  Q Wahab; H Kosugi; H Yano; C Hallin; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor

  S Bai; G Wagner; E Shishkin; WJ Choyke; RP Devaty; M Zhang; P Pirouz; T Kimoto

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD

  K Fujihira; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• The development of 4H-SiC {033^^-8} wafers

  NAKAYAMA K.

  Mater. Sci. Forum, 2002年, 査読有り

  
• Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)

  Y Negoro; N Miyamoto; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2002年01月, 査読有り

  この論文にアクセスする：

  
• Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

  K Fujihira; S Tamura; T Kimoto; H Matsunami

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002年01月, 査読有り

  この論文にアクセスする：

  
• Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD

  K Fujihira; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002年, 査読有り

  この論文にアクセスする：

  
• Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates

  Y Chen; T Kimoto; Y Takeuchi; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002年, 査読有り

  この論文にアクセスする：

  
• Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition

  T Kimoto; S Nakazawa; K Hashimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2001年10月, 査読有り

  この論文にアクセスする：

  
• Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0)

  T Kimoto; T Yamamoto; ZY Chen; H Yano; H Matsunami

  JOURNAL OF APPLIED PHYSICS, 2001年06月, 査読有り

  この論文にアクセスする：

  
• Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition

  T Kimoto; ZY Chen; S Tamura; S Nakamura; N Onojima; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001年05月, 査読有り

  この論文にアクセスする：

  
• High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes

  S Tamura; K Fujihira; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001年04月, 査読有り

  この論文にアクセスする：

  
• Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition

  T Kimoto; S Tamura; Y Chen; K Fujihira; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001年04月, 査読有り

  この論文にアクセスする：

  
• Recent progress in SiC epitaxial growth and device processing technology

  T Kimoto; H Yano; S Tamura; N Miyamoto; K Fujihira; Y Negoro; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001年, 査読有り

  
• Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient

  O Klettke; G Pensl; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001年, 査読有り

  
• Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC

  A Schoner; N Miyamoto; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001年, 査読有り

  
• A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face

  H Yano; T Hirao; T Kimoto; H Matsunami

  APPLIED PHYSICS LETTERS, 2001年01月, 査読有り

  この論文にアクセスする：

  
• Interface states of SiO(2)/SiC on (11(2)over-bar-0) and (0001) Si faces

  N Yano; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001年, 査読有り

  
• Crystal growth of SiCII. Epitaxial growth

  H Matsunami; T Kimoto

  ADVANCES IN CRYSTAL GROWTH RESEARCH, 2001年, 査読有り

  
• Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers

  T Hatayama; T Yoneda; T Nakata; M Watanabe; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000年12月, 査読有り

  この論文にアクセスする：

  
• Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

  S Nakamura; T Kimoto; H Matsunami; S Tanaka; N Teraguchi; A Suzuki

  APPLIED PHYSICS LETTERS, 2000年06月, 査読有り

  この論文にアクセスする：

  
• High channel mobility in inversion layer of SiC MOSFETs for power switching transistors

  H Yano; T Hirao; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000年04月, 査読有り

  この論文にアクセスする：

  
• Growth of SiC on 6H-SIC {01(1)over-bar-4} substrates by gas source molecular beam epitaxy

  S Nakamura; T Hatayama; T Kimoto; T Fuyuki; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  
• Sub-mu m scale photoluminescence image of SiC and GaN at a low temperature

  M Yoshimoto; M Goto; J Saraie; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• SiC MISFETs with MBE-grown AlN gate dielectric

  CM Zetterling; M Ostling; H Yano; T Kimoto; H Matsunami; K Linthicum; RF Davis

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy

  T Hatayama; T Fuyuki; S Nakamura; K Kurobe; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• Nuclear transmutation doping of phosphorus into 6H-SiC

  S Tamura; T Kimoto; H Matsunami; M Okada; S Kanazawa; Kimura, I

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face

  H Yano; T Hirao; T Kimoto; H Matsunami; K Asano; Y Sugawara

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• 4H-SiC (112̄0) epitaxial growth

  T. Kimoto; T. Yamamoto; Z.Y. Chen; H. Yano; H. Matsunami

  Materials Science Forum, 2000年, 査読有り

  
• MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation

  H Yano; T Kimoto; H Matsunami; M Bassler; G Pensl

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics

  N Miyamoto; A Saitoh; T Kimoto; H Matsunami; Y Hishida; M Watanabe

  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000年, 査読有り

  この論文にアクセスする：

  
• Specular surface morphology of 4H-SiC epilayers grown on (1120) face

  ZY Chen; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999年12月, 査読有り

  この論文にアクセスする：

  
• High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face

  H Yano; T Hirao; T Kimoto; H Matsunami; K Asano; Y Sugawara

  IEEE ELECTRON DEVICE LETTERS, 1999年12月, 査読有り

  
• Nitrogen donor concentrations and its energy levels in 4H-SiC uniquely determined by a new graphical method based on Hall-effect measurement

  H Matsuura; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999年07月, 査読有り

  
• High-temperature surface structure transitions and growth of alpha-SiC (0001) in ultrahigh vacuum

  T Hatayama; S Nakamura; K Kurobe; T Kimoto; T Fuyuki; H Matsunami

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999年07月, 査読有り

  
• Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes

  T Kimoto; N Miyamoto; H Matsunami

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999年07月, 査読有り

  
• Oxygen in silicon carbide: shallow donors and deep accepters

  T Dalibor; H Trageser; G Pensl; T Kimoto; H Matsunami; D Nizhner; O Shigiltchoff; WJ Choyke

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999年07月, 査読有り

  
• Performance limiting surface defects in SiC epitaxial p-n junction diodes

  T Kimoto; N Miyamoto; H Matsunami

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999年03月, 査読有り

  この論文にアクセスする：

  
• Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's

  H Yano; F Katafuchi; T Kimoto; H Matsunami

  IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999年03月, 査読有り

  この論文にアクセスする：

  
• Effects of oxidation/anneal atmosphere on SiC MOS interface and MOSFETs

  H Yano; F Katafuchi; T Kimoto; H Matsunami

  COMPOUND SEMICONDUCTORS 1998, 1999年, 査読有り

  この論文にアクセスする：

  
• Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

  T Kimoto; O Takemura; H Matsunami; T Nakata; M Inoue

  JOURNAL OF ELECTRONIC MATERIALS, 1998年04月, 査読有り

  
• Step-controlled epitaxy of SIC: high-quality homoepitaxial growth

  H Matsunami; T Kimoto

  DIAMOND AND RELATED MATERIALS, 1998年02月, 査読有り

  
• Deep states in SiO2/p-type 4H-SiC interface

  H Yano; N Inoue; T Kimoto; H Matsunami

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• D-II revisited in an modern guise - 6H- and 4H-SiC

  SG Sridhara; DG Nizhner; RP Devaty; WJ Choyke; T Dalibor; G Pensl; T Kimoto

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• Optical properties of silicon carbide: Some recent developments

  RP Devaty; WJ Choyke; SG Sridhara; LL Clemen; DG Nizhner; DJ Larkin; T Troffer; G Pensl; T Kimoto; HS Kong

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence

  T Yamamoto; T Kimoto; H Matsunami

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• High-voltage (> 2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers

  T Kimoto; Q Wahab; A Ellison; U Forsberg; M Tuominen; R Yakimova; A Henry; E Janzen

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• Conductivity control of SiC by in-situ doping and ion implantation

  T Kimoto; A Itoh; N Inoue; O Takemura; T Yamamoto; T Nakajima; H Matsunami

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• Implantation of Al and B acceptors into alpha-SiC and pn junction diodes

  O Takemura; T Kimoto; H Matsunami; T Nakata; M Watanabe; M Inoue

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• Growth and characterisation of thick SiC epilayers by high temperature CVD

  A Ellison; T Kimoto; IG Ivanov; Q Wahab; A Henry; O Kordina; J Zhang; CG Hemmingsson; CY Gu; MR Leys; E Janzen

  SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998年, 査読有り

  
• A 3 kV Schottky barrier diode in 4H-SiC

  Q Wahab; T Kimoto; A Ellison; C Hallin; M Tuominen; R Yakimova; A Henry; JP Bergman; E Janzen

  APPLIED PHYSICS LETTERS, 1998年01月, 査読有り

  
• Deep interface states in SiO2/p-type alpha-SiC structure

  N Inoue; T Kimoto; H Yano; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997年11月, 査読有り

  
• Photoluminescence of 3C-SiC epilayers grown on lattice-matched substrates

  K Nishino; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997年10月, 査読有り

  
• Reduction of double positioning twinning in 3C-SiC grown on alpha-SiC substrates

  K Nishino; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997年08月, 査読有り

  
• Step-controlled epitaxial growth of SiC: high quality homoepitaxy

  H Matsunami; T Kimoto

  MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997年08月, 査読有り

  
• Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy

  H Matsunami; T Kimoto

  DIAMOND AND RELATED MATERIALS, 1997年08月, 査読有り

  
• Radiation-induced defect centers in 4H silicon carbide

  T Dalibor; G Pensl; T Kimoto; H Matsunami; S Sridhara; RP Devaty; WJ Choyke

  DIAMOND AND RELATED MATERIALS, 1997年08月, 査読有り

  
• Nitrogen ion implantation into alpha-SiC epitaxial layers

  T Kimoto; N Inoue; H Matsunami

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1997年07月, 査読有り

  
• Step-controlled epitaxial growth of high-quality SiC layers

  T Kimoto; A Itoh; H Matsunami

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1997年07月, 査読有り

  
• Deep defect centers in silicon carbide monitored with deep level transient spectroscopy

  T Dalibor; G Pensl; H Matsunami; T Kimoto; WJ Choyke; A Schoner; N Nordell

  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997年07月, 査読有り

  
• Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane

  KW Lee; KS Yu; JH Boo; Y Kim; T Hatayama; T Kimoto; H Matsunami

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997年04月, 査読有り

  
• Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001}

  T Kimoto; A Itoh; H Matsunami; T Okano

  JOURNAL OF APPLIED PHYSICS, 1997年04月, 査読有り

  
• High quantum-efficiency 4H-SiC UV photodiode

  KS Park; T Kimoto; H Matsunami

  JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997年02月, 査読有り

  
• Formation of semi-insulating 6H-SiC layers by vanadium ion implantations

  T Kimoto; T Nakajima; H Matsunami; T Nakata; M Inoue

  APPLIED PHYSICS LETTERS, 1996年08月, 査読有り

  
• Exciton-related photoluminescence in 4H-SiC grown by step-controlled epitaxy

  A Itoh; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996年08月, 査読有り

  
• Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance

  S Kobayashi; T Kimoto; H Matsunami

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996年06月, 査読有り

  
• Aluminum and boron ion implantations into 6H-SiC epilayers

  T Kimoto; A Itoh; H Matsunami; T Nakata; M Watanabe

  JOURNAL OF ELECTRONIC MATERIALS, 1996年05月, 査読有り

  
• Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

  A Itoh; T Kimoto; H Matsunami

  IEEE ELECTRON DEVICE LETTERS, 1996年03月, 査読有り

  
• Thermal oxidation of B-doped p-type 6H-SiC and fabrication of MOS diodes

  H Akita; T Kimoto; N Inoue; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 1995, 1996年, 査読有り

  
• Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy

  T Kimoto; A Itoh; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 1995, 1996年, 査読有り

  
• Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method

  K Nishino; T Kimoto; H Matsunami

  SILICON CARBIDE AND RELATED MATERIALS 1995, 1996年, 査読有り

  
• NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION

  T KIMOTO; A ITOH; H MATSUNAMI; S SRIDHARA; LL CLEMEN; RP DEVATY; WJ CHOYKE; T DALIBOR; C PEPPERMULLER; G PENSL

  APPLIED PHYSICS LETTERS, 1995年11月, 査読有り

  
• INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC

  T KIMOTO; A ITOH; H MATSUNAMI

  APPLIED PHYSICS LETTERS, 1995年10月, 査読有り

  
• PHOTOLUMINESCENCE OF HOMOEPITAXIAL 3C-SIC ON SUBLIMATION-GROWN 3C-SIC SUBSTRATES

  K NISHINO; T KIMOTO; H MATSUNAMI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995年09月, 査読有り

  
• SURFACE-DIFFUSION LENGTHS OF ADATOMS ON 6H-SIC(0001) FACES IN CHEMICAL-VAPOR-DEPOSITION OF SIC

  T KIMOTO; H MATSUNAMI

  JOURNAL OF APPLIED PHYSICS, 1995年09月, 査読有り

  
• HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES

  A ITOH; T KIMOTO; H MATSUNAMI

  IEEE ELECTRON DEVICE LETTERS, 1995年06月, 査読有り

  
• NITROGEN ION-IMPLANTATION INTO 6H-SIC AND APPLICATION TO HIGH-TEMPERATURE, RADIATION-HARD DIODES

  S YAGUCHI; T KIMOTO; N OHYAMA; H MATSUNAMI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995年06月, 査読有り

  
• STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES

  T KIMOTO; A ITOH; H MATSUNAMI

  APPLIED PHYSICS LETTERS, 1995年06月, 査読有り

  
• THE EFFECTS OF N+ DOSE IN IMPLANTATION INTO 6H-SIC EPILAYERS

  T KIMOTO; A ITOH; H MATSUNAMI; T NAKATA; M WATANABE

  JOURNAL OF ELECTRONIC MATERIALS, 1995年04月, 査読有り

  
• PROGRESS IN SEMICONDUCTOR SIC AND ION IMPLANTATION

  H MATSUNAMI; T KIMOTO

  REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 13, MARCH 1995, 1995年, 査読有り

  
• NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES

  T KIMOTO; H MATSUNAMI

  JOURNAL OF APPLIED PHYSICS, 1994年12月, 査読有り

  
• HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY

  A ITOH; H AKITA; T KIMOTO; H MATSUNAMI

  APPLIED PHYSICS LETTERS, 1994年09月, 査読有り

  
• DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS

  S JANG; T KIMOTO; H MATSUNAMI

  APPLIED PHYSICS LETTERS, 1994年08月, 査読有り

  
• TERRACE GROWTH AND POLYTYPE DEVELOPMENT IN EPITAXIAL BETA-SIC FILMS ON ALPHA-SIC (6H AND 15R) SUBSTRATES

  FR CHIEN; NUTT, SR; WS YOO; T KIMOTO; H MATSUNAMI

  JOURNAL OF MATERIALS RESEARCH, 1994年04月, 査読有り

  
• INTERFACE STRUCTURES OF EPITAXIAL BETA-SIC ON ALPHA-SIC SUBSTRATES

  FR CHIEN; NUTT, SR; WS YOO; T KIMOTO; H MATSUNAMI

  JOURNAL OF CRYSTAL GROWTH, 1994年03月, 査読有り

  
• SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES

  T KIMOTO; H MATSUNAMI

  JOURNAL OF APPLIED PHYSICS, 1994年01月, 査読有り

  
• 特集 半導体デバイスにおけるコンタクト材料 ＳｉＣ半導体材料，デバイスとコンタクト材料

  松波 弘之; 木本 恒暢

  まてりあ, 1994年

  
• HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES

  T KIMOTO; T URUSHIDANI; S KOBAYASHI; H MATSUNAMI

  IEEE ELECTRON DEVICE LETTERS, 1993年12月, 査読有り

  
• 4H-SIC/6H-SIC INTERFACE STRUCTURES STUDIED BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

  H IWASAKI; S INOUE; T YOSHINOBU; M TARUTANI; Y TAKAI; R SHIMIZU; A ITO; T KIMOTO; H MATSUNAMI

  APPLIED PHYSICS LETTERS, 1993年11月, 査読有り

  
• STEP-CONTROLLED EPITAXIAL-GROWTH OF 4H-SIC AND DOPING OF GA AS A BLUE LUMINESCENT CENTER

  T KIMOTO; A YAMASHITA; A ITOH; H MATSUNAMI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993年03月, 査読有り

  
• GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY

  T KIMOTO; H NISHINO; WS YOO; H MATSUNAMI

  JOURNAL OF APPLIED PHYSICS, 1993年01月, 査読有り

  
• HOMOEPITAXIAL CHEMICAL VAPOR-DEPOSITION OF 6H-SIC AT LOW-TEMPERATURES ON (01(1)OVER-BAR-4) SUBSTRATES

  A YAMASHITA; WS YOO; T KIMOTO; H MATSUNAMI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992年11月, 査読有り

  
• Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method.

  KIMOTO T; NISHINO H; YAMASHITA A; YOO W S; MATSUNAMI H

  Amorph Cryst Silicon Carbide 4, 1992年, 査読有り

  
• Epitaxial growth of β-SiC on α-SiC substrates by chemical vapor deposition

  Katsushi Nishino; Tsunenobu Kimoto; Hiroyuki Matsunami

  Memoirs of the Faculty of Engineering, Kyoto University, 1992年, 査読有り

  
• BULK CRYSTAL-GROWTH OF 6H-SIC ON POLYTYPE-CONTROLLED SUBSTRATES THROUGH VAPOR-PHASE AND CHARACTERIZATION

  WS YOO; A YAMASHITA; T KIMOTO; H MATSUNAMI

  JOURNAL OF CRYSTAL GROWTH, 1991年12月, 査読有り

  
• PHOTOLUMINESCENCE OF TI DOPED 6H-SIC GROWN BY VAPOR-PHASE EPITAXY

  T KIMOTO; H NISHINO; T UEDA; A YAMASHITA; WS YOO; H MATSUNAMI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991年02月, 査読有り

  
• DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT

  T FUYUKI; KY DU; S OKAMOTO; S YASUDA; T KIMOTO; M YOSHIMOTO; H MATSUNAMI

  JOURNAL OF APPLIED PHYSICS, 1988年09月, 査読有り

  
• Solubility and diffusion of chromium in 4H-SiC

  Danno Katsunori; Saito Makoto; Seki Akinori; Sato Kazuaki; Bessho Takeshi; Kimoto Tsunenobu

  Appl. Phys. Express, 2016年05月06日