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Kaneko, Mitsuaki

Graduate School of Engineering, Division of Electronic Science and Engineering Assistant Professor

Kaneko, Mitsuaki
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    Last Updated :2022/09/30

    Basic Information

    Faculty

    • 工学部

    Academic Degree

    • 修士(工学)(京都大学)
    • 博士(工学)(京都大学)

    Academic Resume (Graduate Schools)

    • 京都大学, 大学院工学研究科修士課程電子工学専攻, 修了
    • 京都大学, 大学院工学研究科博士後期課程電子工学専攻, 修了

    Academic Resume (Undergraduate School/Majors)

    • 京都大学, 工学部電気電子工学科, 卒業

    Research History

    • From Jan. 2019, To Present
      Kyoto University, Assistant Professor
    • From Dec. 2017, To Dec. 2018
      ETH Zurich, JSPS Overseas Research Fellow
    • From Apr. 2017, To Dec. 2017
      Kyoto University, 特定研究員(PD)
    • From Oct. 2016, To Mar. 2017
      Kyoto University, Research Fellow of Japan Society for the Promotion of Science
    • From Apr. 2014, To Sep. 2016
      Kyoto University, Research Fellow of Japan Society for the Promotion of Science

    ID,URL

    researchmap URL

    list
      Last Updated :2022/09/30

      Research

      Research Topics, Overview of the research

      • Research Topics

        Development of SiC electronic devices operating under harsh environment
      • Overview of the research

        SiC, a wide bandgap semiconductor, has attracted much attention for the material composing ICs operating under harsh environment (high temperature, radiation, high pressure.)
        Investigation and development of SiC devices working under such environment.

      Research Interests

      • silicon carbide
      • crystal growth
      • electron devices
      • Wide bandgap semiconductor

      Research Areas

      • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

      Papers

      • SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K
        M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto
        IEEE Electron Device Letters, Jul. 2022, Peer-reviewed, Lead author, Corresponding author
      • Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
        Keita Tachiki; Kyota Mikami; Koji Ito; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 01 Jul. 2022, Peer-reviewed
      • Performance Improvement and Reliability Physics in SiC MOSFETs
        T. Kimoto; K. Tachiki; A. Iijima; M. Kaneko
        Proc. of IEEE Int. Reliability Phys. Sympo., May 2022
      • Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes
        Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Letters, 25 Apr. 2022, Peer-reviewed
      • Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature
        Ryoya Ishikawa; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 03 Jun. 2021, Peer-reviewed
      • Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC
        Euihyeon Do; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 13 May 2021, Peer-reviewed
      • Lateral spreads of ion-implanted Al and P atoms in silicon carbide
        Qimin Jin; Masashi Nakajima; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 28 Apr. 2021, Peer-reviewed
      • Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures
        Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto
        Japanese Journal of Applied Physics, 18 Feb. 2021, Peer-reviewed
      • Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
        Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto
        Applied Physics Express, 29 Jan. 2021, Peer-reviewed
      • Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
        Keita Tachiki; Mitsuaki Kaneko; Takuma Kobayashi; Tsunenobu Kimoto
        Applied Physics Express, 01 Dec. 2020, Peer-reviewed
      • Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs
        M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto
        IEEE Transactions on Electron Devices, Oct. 2020, Peer-reviewed, Lead author
      • Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC
        Dionysios Stefanakis; Xilun Chi; Takuya Maeda; Mitsuaki Kaneko; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Sep. 2020, Peer-reviewed
      • Tunneling Current in 4H-SiC p-n Junction Diodes
        M. Kaneko; X. Chi; T. Kimoto
        IEEE Transactions on Electron Devices, Aug. 2020, Peer-reviewed, Lead author
      • Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE
        Mitsuaki Kaneko; Kazuto Hirai; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, 01 Feb. 2020, Peer-reviewed, Lead author
      • Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
        M. Nakajima; M. Kaneko; T. Kimoto
        IEEE Electron Device Letters, Jun. 2019, Peer-reviewed
      • SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation
        Mitsuaki Kaneko; Ulrike Grossner; Tsunenobu Kimoto
        Materials Science Forum, Jan. 2019, Peer-reviewed
      • Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies
        Kanegae Kazutaka; Kaneko Mitsuaki; Kimoto Tsunenobu; Horita Masahiro; Suda Jun
        JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2018, Peer-reviewed
      • High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
        M. Kaneko; T. Kimoto
        IEEE Electron Device Letters, 01 May 2018, Peer-reviewed
      • Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4 H - SiC (11 2 0)
        M. Kaneko; S. Ueta; M. Horita; T. Kimoto; J. Suda
        Applied Physics Letters, 01 Jan. 2018, Peer-reviewed
      • Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
        M. Kaneko; T. Kimoto; J. Suda
        AIP Advances, 01 Jan. 2017, Peer-reviewed
      • Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE
        Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        Physica Status Solidi (B) Basic Research, 01 May 2016, Peer-reviewed
      • Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy
        Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, 01 Feb. 2016, Peer-reviewed
      • Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy
        Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu Kimoto; Jun Suda
        Japanese Journal of Applied Physics, Aug. 2013, Peer-reviewed
      • Optical properties of highly strained AlN coherently grown on 6H-SiC(0001)
        Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, Jun. 2013, Peer-reviewed
      • AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy
        Ryosuke Kikuchi; Hironori Okumura; Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        Applied Physics Express, May 2012, Peer-reviewed
      • Physics and Innovative Technologies in SiC Power Devices
        T. Kimoto; M. Kaneko; K. Tachiki; K. Ito; R. Ishikawa; X. Chi; D. Stefanakis; T. Kobayashi; H. Tanaka
        Tech. Digest of 67th IEEE Int. Electron Devices Meeting, 09 Mar. 2022
      • Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates
        Katsuya Takahashi; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto
        IEEE Transactions on Electron Devices, Apr. 2022, Peer-reviewed

      Misc.

      • Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
        鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳
        電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016
      • Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
        鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳
        電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016
      • Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
        鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳
        電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016
      • 20190927
        金子 光顕
        Oyo Buturi, 2015

      Presentations

      • High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies
        Tsunenobu Kimoto; Keita Tachiki; Koji Ito; Kyota Mikami; Mitsuaki Kaneko; Masahiro Horita; Jun Suda
        14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022), 30 Aug. 2022, Invited
      • High-Temperature Operation of SiC JFET-Based Complementary Circuits
        M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
        2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 08 Jul. 2022, Invited
      • Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices
        Tsunenobu Kimoto; Akifumi Iijima; Mitsuaki Kaneko
        241st Electrochemical Society Meeting, 30 May 2022, Invited
      • Physics and Innovative Technologies in SiC Power Devices
        Tsunenobu Kimoto; Mitsuaki Kaneko; Keita Tachiki; Koji Ito; Ryoya Ishikawa; Xilun Chi; Dionysios Stefanakis; Takuma Kobayashi; Hajime Tanaka
        67th IEEE Int. Electron Devices Meeting, 15 Dec. 2021, Invited
      • A New Horizon of SiC Technology Driven by Deeper Understanding of Physics
        Tsunenobu Kimoto; Mitsuaki Kaneko; Takuya Kobayashi; Hajime Tanaka; Keita Tachiki; Akihumi Iijima; Shoma Yamashita; Xilun Chi; Ying Zhao; Dionysios Stefanakis; Yu-ichiro Matsushita
        13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021), 28 Oct. 2021, Invited
      • Mobility improvement in 4H-SiC MOSFETs by H2 etching before SiO2 deposition and interface nitridation
        Keita Tachiki; Koji Ito; Mitsuaki Kaneko; Tsunenobu Kimoto
        13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021), 26 Oct. 2021, Invited
      • Progress and Future Challenges of SiC Power MOSFETs
        Tsunenobu Kimoto; Takuma Kobayashi; Keita Tachiki; Koji Ito; Mitsuaki Kaneko
        5th IEEE Electron Devices Technology and Manufacturing Conference 2021, 11 Apr. 2021, Invited
      • Progress and Future Prospects of High-Voltage SiC Power Devices
        Tsunenobu Kimoto; Mitsuaki Kaneko
        2020 Int. Symp. on VLSI Technology, Systems and Applications, 11 Aug. 2020, Invited
      • Progress and future challenges of SiC power devices for energy efficiency
        T. Kimoto; M. Kaneko
        12th Int. Symp. on Advanced Plasma Sci. & Its Applications for Nitrides and Nanomaterials (ISPlasma 2020), 09 Mar. 2020, Invited
      • Breakdown Phenomena in High- and Low-Voltage SiC Devices
        T. Kimoto; X. Chi; Y. Zhao; H. Niwa; M. Kaneko
        Materials Research Meeting 2019, 11 Dec. 2019, Invited
      • 高温動作集積回路を目指したノーマリオフ型p-JFETおよびn-JFETの同一SiC基板上への作製
        中島誠志; 金祺民; 金子光顕; 木本恒暢
        応用物理学会先進パワー半導体分科会 第6回講演会, 04 Dec. 2019, Invited
      • SiCにおけるショックレー型積層欠陥の拡大/縮小臨海条件のモデリング
        金子光顕; 飯島彬文; 田中一; 木本恒暢
        応用物理学会 先進パワー半導体分科会 第5回個別討論会「ここまで来たSiC順方向劣化現象の理解と対策」, 17 Jun. 2019, Invited
      • 400℃ operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate
        Masashi Nakjima; Mitsuaki Kaneko; Tsunenobu Kimoto
        European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), 10 Sep. 2018, Invited
      • Intentional introduction of misfit dislocations at AlN/SiC heterointerface
        Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
        6th Center for Integrated Research of Future Electronics Seminar: Seminar on Interface Control, 10 Aug. 2017, Invited
      • Performance Improvement and Reliability Physics in SiC MOSFETs
        Tsunenobu Kimoto; Keita Tachiki; Akifumi Iijima; Mitsuaki Kaneko
        IEEE Int. Reliability Phys. Sympo., 30 Mar. 2022, Invited

      Industrial Property Rights

      • 特開2019-091873, 特願2018-036440, SiC接合型電界効果トランジスタ及びSiC相補型接合型電界効果トランジスタ
        木本 恒暢; 金子 光顕; 中島 誠志

      Awards

      • 28 Apr. 2012
        第4回窒化物半導体結晶成長講演会, Encouragement Award
      • 19 Oct. 2012
        窒化物半導体国際ワークショップ2012, Best Paper Award
      • 17 Jul. 2015
        第34回電子材料シンポジウム, 34th Electronic Materials Symposium Award
      • 13 Sep. 2015
        応用物理学会, Young Scientist Presentation Award
      • 40 Apr. 2020
        FFIT, Funai Research Promotion Award

      External funds: Kakenhi

      • Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature range
        Grant-in-Aid for Early-Career Scientists
        Basic Section 21060:Electron device and electronic equipment-related
        Kyoto University
        金子 光顕
        From 01 Apr. 2021, To 31 Mar. 2024, Granted
        炭化ケイ素;電界効果トランジスタ;論理回路;閾値電圧;イオン注入
      • Materials Science and Device Physics in SiC toward Robust Electronics
        Grant-in-Aid for Scientific Research (S)
        Broad Section C
        Kyoto University
        木本 恒暢
        From 05 Jul. 2021, To 31 Mar. 2026, Granted
        炭化珪素;MOS界面;MOSFET;絶縁破壊;高温動作デバイス
      • 学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開
        Grant-in-Aid for Scientific Research (A)
        Medium-sized Section 21:Electrical and electronic engineering and related fields
        Kyoto University
        木本 恒暢
        From 05 Apr. 2021, To 31 Mar. 2024, Granted
        炭化珪素;酸化膜;MOSFET;MOS界面;チャネル移動度
      • Development of SiC hybrid integrated circuits operational under harsh environment
        Grant-in-Aid for Research Activity Start-up
        0302:Electrical and electronic engineering and related fields
        Kyoto University
        Mitsuaki Kaneko
        From 30 Aug. 2019, To 31 Mar. 2021, Project Closed
        炭化ケイ素;電界効果トランジスタ;論理回路;ハイブリッド;イオン注入;厳環境;接合型トランジスタ;炭化珪素;集積回路

      External funds: others

      • イオン注入による厳環境動作SiC集積回路の開発
        増屋記念基礎研究振興財団
        From 01 Apr. 2019, To 31 Mar. 2020
        金子光顕
      • 超高温環境動作SiC集積回路の開発
        稲盛財団
        From 01 Apr. 2020, To 31 Mar. 2023
        金子光顕
      • 超高温環境動作可能な相補型JFET集積回路の開発
        村田学術振興財団
        From 01 Jul. 2020, To 30 Jun. 2021
        金子光顕
      • 厳環境動作集積回路実現に向けた炭化ケイ素半導体中のイオン注入時チャネリング量の同定
        池谷科学技術振興財団
        From 01 Apr. 2021, To 31 Mar. 2022
        金子 光顕
      • 超高温動作可能な炭化ケイ素集積回路開発に関する研究
        サムコ科学技術振興財団
        From 01 Oct. 2021, To 30 Sep. 2022
        金子光顕
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        Last Updated :2022/09/30

        Education

        Teaching subject(s)

        • From 01 Apr. 2022, To 31 Mar. 2023
          Advanced Practice of Electrical and Electronic Engineering
          6202, Fall, Faculty of Engineering, 2
        • From Apr. 2019, To Mar. 2020
          Advanced Practice of Electrical and Electronic Engineering
          Fall, 工学部
        • From Apr. 2020, To Mar. 2021
          Fundamental Practice of Electrical & Electronic Engineering
          Fall, 工学部
        • From Apr. 2020, To Mar. 2021
          Advanced Practice of Electrical and Electronic Engineering
          Fall, 工学部
        • From Apr. 2021, To Mar. 2022
          Advanced Practice of Electrical and Electronic Engineering
          Fall, 工学部
        list
          Last Updated :2022/09/30

          Administration

          Faculty management (title, position)

          • From 01 Apr. 2019
            電気電子工学科 サマーキャンプ運営委員会
          • From 01 Apr. 2020, To 31 Mar. 2022
            桂事業場環境安全衛生委員会 委員
          • From 01 Apr. 2020
            電気電子工学科 学生実験9人委員
          • From 01 May 2020
            工学部無期廃液処理実行委員会(電気系担当)
          list
            Last Updated :2022/09/30

            Academic, Social Contribution

            Committee Memberships

            • From Mar. 2022, To Present
              会場委員, 第41回EMS
            • From Apr. 2020, To Present
              Treasurer [Permanent Member], The Japan Society of Applied Physics, The Advanced Power Semiconductors Division
            • From Jan. 2019, To Oct. 2019
              ICSCRM 2019組織委員

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