Basic Information

Faculty

• Faculty of Engineering

Academic Degree

• 修士(工学)(京都大学)
• 博士(工学)(京都大学)

Academic Resume (Graduate Schools)

• 京都大学, 大学院工学研究科修士課程電子工学専攻, 修了
• 京都大学, 大学院工学研究科博士後期課程電子工学専攻, 修了

Academic Resume (Undergraduate School/Majors)

• 京都大学, 工学部電気電子工学科, 卒業

Research History

• From Jan. 2019, To Present

  Kyoto University, Assistant Professor
• From Dec. 2017, To Dec. 2018

  ETH Zurich, JSPS Overseas Research Fellow
• From Apr. 2017, To Dec. 2017

  Kyoto University, 特定研究員（PD）
• From Oct. 2016, To Mar. 2017

  Kyoto University, Research Fellow of Japan Society for the Promotion of Science
• From Apr. 2014, To Sep. 2016

  Kyoto University, Research Fellow of Japan Society for the Promotion of Science

ID,URL

• J-Global ID

  201901019940361859

• External link

  http://semicon.kuee.kyoto-u.ac.jp/

researchmap URL

• https://researchmap.jp/Miki-k

Research

Research Topics, Overview of the research

• Research Topics

  Development of SiC electronic devices operating under harsh environment

• Overview of the research

  SiC, a wide bandgap semiconductor, has attracted much attention for the material composing ICs operating under harsh environment (high temperature, radiation, high pressure.)
  Investigation and development of SiC devices working under such environment.

Research Interests

• silicon carbide
• crystal growth
• electron devices
• Wide bandgap semiconductor

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

Papers

• Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces

  Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Letters, 02 Jun. 2025, Peer-reviewed

  
• First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs

  Noriyuki Maeda; Mitsuaki Kaneko; Hajime Tanaka; Tsunenobu Kimoto

  APL Electronic Devices, 23 Apr. 2025, Peer-reviewed, Corresponding author

  
• Fundamentals and Future Challenges of SiC Power Devices

  Tsunenobu Kimoto; Ryoya Ishikawa; Keita Tachiki; Xilun Chi; Kyota Mikami; Mitsuaki Kaneko

  Proceedings of 9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025, Mar. 2025

  
• Unique Electron Trapping and its Impacts on Electron Mobility in SiC n-Channel MOSFETs

  Xilun Chi; Koji Ito; Takeru Suto; Akio Shima; Mitsuaki Kaneko; Tsunenobu Kimoto

  2024 IEEE International Electron Devices Meeting (IEDM), 07 Dec. 2024, Peer-reviewed

  
• Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC

  Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Journal of Applied Physics, Apr. 2025, Peer-reviewed

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• Doping-dependent fixed charges in SiC/SiO₂ structure

  Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 06 Mar. 2025, Peer-reviewed

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• Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC

  Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 01 Nov. 2024, Peer-reviewed

  
• Impact ionization coefficients along 4H-SiC 〈 11 2 ¯ 0 〉 in a wide temperature range

  Takeaki Kitawaki; Xilun Chi; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 26 Nov. 2024

  
• An Overview of SiC High-Voltage Power Devices and High-Temperature ICs

  T. Kimoto; M. Kaneko; K. Tachiki; K. Ito; K. Mikami; H. Fujii; A. Inoue; N. Maeda

  2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 27 Oct. 2024

  
• Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects

  Shion Toshimitsu; Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 02 Sep. 2024, Peer-reviewed

  
• Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes

  Ryoya Ishikawa; Mitsuaki Kaneko; Tsunenobu Kimoto

  Solid State Phenomena, 23 Aug. 2024

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• Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

  Shota Kozakai; Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Journal of Applied Physics, 06 Sep. 2024, Peer-reviewed

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• High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces

  Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Electron Device Letters, Jul. 2024, Peer-reviewed

  
• Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

  Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 03 Jun. 2024, Peer-reviewed

  
• Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process

  Kotaro Kuwahara; Takeaki Kitawaki; Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 01 May 2024, Peer-reviewed

  
• High electron mobility in heavily sulfur-doped 4H-SiC

  Mitsuaki Kaneko; Taiga Matsuoka; Tsunenobu Kimoto

  Journal of Applied Physics, 23 May 2024, Peer-reviewed, Lead author, Corresponding author

  
• Generation of deep levels near the 4H-SiC surface by thermal oxidation

  Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 29 Apr. 2024, Peer-reviewed

  
• 高温環境での動作を可能にするSiC JFETを用いた相補型論理回路の研究

  金子光顕; 木本恒暢

  電子情報通信学会誌 C, Apr. 2024, Peer-reviewed, Invited, Lead author, Corresponding author

  
• Origin of hole mobility anisotropy in 4H-SiC

  Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Journal of Applied Physics, 16 Feb. 2024, Peer-reviewed

  
• Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs

  Kyota Mikami; Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, Jan. 2024, Peer-reviewed

  
• Tunneling current through non-alloyed metal/heavily-doped SiC interfaces

  Masahiro Hara; Takeaki Kitawaki; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Materials Science in Semiconductor Processing, Nov. 2023, Peer-reviewed, Invited

  
• 350°C Operation of SiC Complementary JFET Logic Gates

  Mitsuaki Kaneko; Masashi Nakajima; Qimin Jin; Noriyuki Maeda; Tsunenobu Kimoto

  2023 IEEE CPMT Symposium Japan (ICSJ), 15 Nov. 2023, Lead author

  
• Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs

  Xilun Chi; Keita Tachiki; Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 16 Nov. 2023, Peer-reviewed

  
• Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface

  Mitsuaki Kaneko; Hideaki Takashima; Konosuke Shimazaki; Shigeki Takeuchi; Tsunenobu Kimoto

  APL Materials, 27 Sep. 2023, Peer-reviewed, Lead author, Corresponding author

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• Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H‐SiC

  Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  physica status solidi (b), 17 Aug. 2023, Peer-reviewed

  
• Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate

  M. Kaneko; A. Tsibizov; T. Kimoto; U. Grossner

  IEEE Transactions on Electron Devices, Apr. 2023, Peer-reviewed, Lead author, Corresponding author

  
• Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

  Takeaki Kitawaki; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 01 Mar. 2023, Peer-reviewed

  
• Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC

  Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 15 Feb. 2023, Peer-reviewed

  
• Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation

  Taiga Matsuoka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 31 Jan. 2023, Peer-reviewed

  
• SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K

  M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto

  IEEE Electron Device Letters, Jul. 2022, Peer-reviewed, Lead author, Corresponding author

  
• Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process

  Keita Tachiki; Kyota Mikami; Koji Ito; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 01 Jul. 2022, Peer-reviewed

  
• Performance Improvement and Reliability Physics in SiC MOSFETs

  T. Kimoto; K. Tachiki; A. Iijima; M. Kaneko

  Proc. of IEEE Int. Reliability Phys. Sympo., May 2022

  
• Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes

  Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Letters, 25 Apr. 2022, Peer-reviewed

  
• Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

  Ryoya Ishikawa; Masahiro Hara; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 03 Jun. 2021, Peer-reviewed

  
• Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC

  Euihyeon Do; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 13 May 2021, Peer-reviewed

  
• Lateral spreads of ion-implanted Al and P atoms in silicon carbide

  Qimin Jin; Masashi Nakajima; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 28 Apr. 2021, Peer-reviewed

  
• Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures

  Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto

  Japanese Journal of Applied Physics, 18 Feb. 2021, Peer-reviewed

  
• Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation

  Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto

  Applied Physics Express, 29 Jan. 2021, Peer-reviewed

  
• Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing

  Keita Tachiki; Mitsuaki Kaneko; Takuma Kobayashi; Tsunenobu Kimoto

  Applied Physics Express, 01 Dec. 2020, Peer-reviewed

  
• Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

  M. Kaneko; M. Nakajima; Q. Jin; T. Kimoto

  IEEE Transactions on Electron Devices, Oct. 2020, Peer-reviewed, Lead author

  
• Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

  Dionysios Stefanakis; Xilun Chi; Takuya Maeda; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, Sep. 2020, Peer-reviewed

  
• Tunneling Current in 4H-SiC p-n Junction Diodes

  M. Kaneko; X. Chi; T. Kimoto

  IEEE Transactions on Electron Devices, Aug. 2020, Peer-reviewed, Lead author

  
• Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE

  Mitsuaki Kaneko; Kazuto Hirai; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, 01 Feb. 2020, Peer-reviewed, Lead author

  
• Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate

  M. Nakajima; M. Kaneko; T. Kimoto

  IEEE Electron Device Letters, Jun. 2019, Peer-reviewed

  
• SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation

  Mitsuaki Kaneko; Ulrike Grossner; Tsunenobu Kimoto

  Materials Science Forum, Jan. 2019, Peer-reviewed, Lead author

  
• Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies

  Kanegae Kazutaka; Kaneko Mitsuaki; Kimoto Tsunenobu; Horita Masahiro; Suda Jun

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2018, Peer-reviewed

  
• High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate

  M. Kaneko; T. Kimoto

  IEEE Electron Device Letters, 01 May 2018, Peer-reviewed, Lead author, Corresponding author

  
• Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4 H - SiC (11 2 0)

  M. Kaneko; S. Ueta; M. Horita; T. Kimoto; J. Suda

  Applied Physics Letters, 01 Jan. 2018, Peer-reviewed, Lead author, Corresponding author

  
• Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)

  M. Kaneko; T. Kimoto; J. Suda

  AIP Advances, 01 Jan. 2017, Peer-reviewed, Lead author, Corresponding author

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• Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE

  Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  Physica Status Solidi (B) Basic Research, 01 May 2016, Peer-reviewed, Lead author, Corresponding author

  
• Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy

  Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, 01 Feb. 2016, Peer-reviewed, Lead author, Corresponding author

  
• Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy

  Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu Kimoto; Jun Suda

  Japanese Journal of Applied Physics, Aug. 2013, Peer-reviewed, Lead author, Corresponding author

  
• Optical properties of highly strained AlN coherently grown on 6H-SiC(0001)

  Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, Jun. 2013, Peer-reviewed, Lead author, Corresponding author

  
• AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy

  Ryosuke Kikuchi; Hironori Okumura; Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  Applied Physics Express, May 2012, Peer-reviewed

  
• Physics and Innovative Technologies in SiC Power Devices

  T. Kimoto; M. Kaneko; K. Tachiki; K. Ito; R. Ishikawa; X. Chi; D. Stefanakis; T. Kobayashi; H. Tanaka

  Tech. Digest of 67th IEEE Int. Electron Devices Meeting, 09 Mar. 2022

  
• Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates

  Katsuya Takahashi; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  IEEE Transactions on Electron Devices, Apr. 2022, Peer-reviewed

  

Misc.

• Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy

  鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016

  
• Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy

  鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016

  
• Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy

  鐘ヶ江 一孝; 金子 光顕; 木本 恒暢; 堀田 昌宏; 須田 淳

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 12 Dec. 2016

  
• 20190927

  金子 光顕

  Oyo Buturi, 2015

  

Presentations

• 厳環境動作IC実現に向けたSiC相補型JFETの提案とその動作実証

  金子 光顕; 三上 杏太; 木本 恒暢

  第163回結晶工学分科会研究会, 18 Jun. 2025, Invited

  
• Effect of oxidation ambient on the density of single photon sources formed at SiO2/SiC interface

  Mitsuaki Kaneko; Hideaki Takashima; Konosuke Shimazaki; Shigeki Takeuchi; Tsunenobu Kimoto

  Workshop on Material, Photonics, and Quantum Technology (WMPQT2025), 12 Jun. 2025, Invited

  
• 酸化抑制プロセスによる高濃度ボディ層を有するSiC(0001),(1120)および(1100)MOSFETの移動度向上

  立木 馨大; 三上 杏太; 金子 光顕; 木本 恒暢

  第71回応用物理学会春季学術講演会, 23 Mar. 2024, Invited

  
• 高温動作集積回路を目指したSiC基板へのイオン注入によるボトムゲートJFETの作製

  柴田 峻弥; 松岡 大雅; 金子 光顕; 木本 恒暢

  応用物理学会先進パワー半導体分科会 第10回講演会, 01 Dec. 2023, Invited

  
• 無極性面の適用によるSiC p チャネルMOSFET の移動度向上

  三上 杏太; 金子 光顕; 木本 恒暢

  第84回応用物理学会秋季学術講演会, 21 Sep. 2023, Invited

  
• 4H-SiCにおける電子移動度および正孔移動度の異方性

  石川 諒弥; 原 征大; 田中 一; 金子 光顕; 木本 恒暢

  第69回応用物理学会春季学術講演会, 25 Mar. 2022, Invited

  
• 水素エッチングとSiO2堆積後の窒化処理を組み合わせた高品質4H-SiC/SiO2界面の形成

  立木 馨大; 金子 光顕; 小林 拓真; 木本 恒暢

  第68回応用物理学会春季学術講演会, 18 Mar. 2021, Invited

  
• 厳環境動作集積回路実現に向けたSiC相補型MOSおよび相補型JFETの研究

  金子 光顕; 三上 杏太; 木本 恒暢

  SiCアライアンス第１回技術・普及WG, 08 May 2025, Invited

  
• SiC相補型JFETの350℃動作実証および性能向上に向けた基礎研究

  金子 光顕; 木本 恒暢

  第72回応用物理学会春季学術講演会 特別シンポジウム「極限環境デバイス」, 15 Mar. 2025, Invited

  
• Fundamentals and Future Challenges of SiC Power Devices

  Tsunenobu Kimoto; Ryoya Ishikawa; Keita Tachiki; Xilun Chi; Kyota Mikami; Mitsuaki Kaneko

  9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025, 10 Mar. 2025, Invited

  
• 酸化排除プロセスによるSiC(0001), (11-20), (1-100)MOSFETの移動度向上

  立木 馨大; 三上 杏太; 遅 熙倫; 金子 光顕; 木本 恒暢

  応用物理学会先進パワー半導体分科会 第11回講演会, 25 Nov. 2024, Invited

  
• SiC High-Voltage Power Devices and High-Temperature Ics

  Tsunenobu Kimoto; Mitsuaki Kaneko; Keita Tachiki; Koji Ito; Kyota Mikami; Haruki Fujii; Akira Inoue; Noriyuki Maeda

  2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 28 Oct. 2024, Invited

  
• 金属/高濃度ドープSiC非合金化界面トンネル現象の理解に基づく低抵抗オーミック接合形成

  原 征大; 北脇 武晃; 桑原 功太朗; 田中 一; 金子 光顕; 木本 恒暢

  応用物理学会 シリコンテクノロジー分科会 第251回研究集会, 11 Jul. 2024, Invited

  
• Tunneling Phenomena and Ohmic Contact Formation at Non-Alloyed Metal/Heavily-Doped SiC Interfaces

  Masahiro Hara; Tateaki Kitawaki; Hajime Tanaka; Mitsuaki Kaneko; Tsunenobu Kimoto

  Pacific Rim Meeting of Electrochemical and Solid State Science 2024, 09 Oct. 2024, Invited

  
• Impacts of Anisotropic Material Properties on Performance of SiC Power Devices

  Tsunenobu Kimoto; Ryoya Ishikawa; Xilun Chi; Kyota Mikami; Keita Tachiki; Mitsuaki Kaneko

  Pacific Rim Meeting of Electrochemical and Solid State Science 2024, 07 Oct. 2024, Invited

  
• Doping-dependent fixed charges in SiC MOSFETs

  Kyota Mikami; Mitsuaki Kaneko; Tsunenobu Kimoto

  21st International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 01 Oct. 2024, Invited

  
• Mobility enhancement in SiC n- and p-channel MOSFETs

  Mitsuaki Kaneko; Keita Tachiki; Kyota Mikami; Haruki Fujii; Tsunenobu Kimoto

  21st International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 01 Oct. 2024, Invited

  
• SiC JFETを用いた厳環境動作相補型論理回路

  金子 光顕; 中島 誠志; 金 祺民; 前田 憲幸; 木本 恒暢

  半導体エレクトロニクス部門委員会第2回研究会 ナノ材料部門委員会第3回研究会, 25 Nov. 2023, Invited

  
• 350˚C operation of SiC complementary JFET logic gates

  Mitsuaki Kaneko; Masashi Nakajima; Qimin Jin; Noriyuki Maeda; Tsunenobu Kimoto

  12th IEEE CPMT Symposium Japan (ICSJ2023), 17 Nov. 2023, Invited

  
• Physics and Performance Improvement of SiC MOSFETs

  Tsunenobu Kimoto; Keita Tachiki; Kyota Mikami; Xilun Chi; Mitsuaki Kaneko

  2023 Int. Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, 23 Oct. 2023, Invited

  
• SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K [IEEE EDL]

  Mitsuaki Kaneko; Masashi Nakajima; Qimin Jin; Tsunenobu Kimoto

  The 23rd Kansai Colloquium Electron Devices Workshop, 06 Oct. 2023, Invited

  
• Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC

  Shota Kozakai; Haruki Fujii; Mitsuaki Kaneko; Tsunenobu Kimoto

  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023), 22 Sep. 2023, Invited

  
• Density control of single-photon sources formed at a SiO2/SiC interface

  Mitsuaki Kaneko; Hideaki Takashima; Shigeki Takeuchi; Tsunenobu Kimoto

  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023), 18 Sep. 2023, Invited

  
• Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications

  Tsunenobu Kimoto; Mitsuaki Kaneko

  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023) Tutorial, 17 Sep. 2023, Invited

  
• High-Field Phenomena in SiC Material and Devices

  Tsunenobu Kimoto; Hiroki Niwa; Xilun Chi; Masahiro Hara; Ryoya Ishikawa; Hajime Tanaka; Mitsuaki Kaneko

  Symposium on Silicon Carbide as Quantum-Classical Platform, 15 Sep. 2023, Invited

  
• 熱酸化SiO2/SiC界面近傍に形成されるSiC中の深い準位

  藤井 開; 鐘ヶ江 一孝; 金子 光顕; 木本 恒暢

  第70回応用物理学会春季学術講演会, 16 Mar. 2023, Invited

  
• Progress of SiC MOSFETs and JFETs beyond Power Applications

  Tsunenobu Kimoto; Keita Tachiki; Kyota Mikami; Mitsuaki Kaneko

  IME Workshop on Wide Bandgap Semiconductors 2023, 28 Jul. 2023, Invited

  
• Hall効果測定によるSイオン注入n型SiC層の電気的性質評価

  松岡 大雅; 金子 光顕; 木本 恒暢

  応用物理学会 先進パワー半導体分科会 第9回講演会, 21 Dec. 2022, Invited

  
• 高温動作集積回路を目指したSiC相補型JFETの基礎研究

  金子 光顕; 中島 誠志; 金 祺民; 前田 憲幸; 木本 恒暢

  応用物理学会 先進パワー半導体分科会 第9回講演会, 21 Dec. 2022, Invited

  
• Progress and future challenges in SiC MOSFETs

  Tsunenobu Kimoto; Keita Tachiki; Koji Ito; Kyota Mikami; Mitsuaki Kaneko

  10th Asia-Pacific Workshop on Widegap Semiconductors 2022, 15 Nov. 2022, Invited

  
• Ion Implantation Technology in SiC for Advanced Electron Devices

  Mitsuaki Kaneko; Masahiro Hara; Masashi Nakajima; Qimin Jin; Tsunenobu Kimoto

  23rd International Conference on Ion Implantation Technology (IIT2022), 27 Sep. 2022, Invited

  
• SiCパワーMOSFETの課題とMOS界面高品質化の進展

  木本 恒暢; 立木 馨大; 伊藤 滉二; 三上 杏太; 金子 光顕

  第83回応用物理学会秋季学術講演会, 21 Sep. 2022, Invited

  
• High temperature operation of SiC complementary JFET logic gates fully fabricated by ion implantation

  Mitsuaki Kaneko; Masashi Nakajima; Qimin Jin; Tsunenobu Kimoto

  19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022), 15 Sep. 2022, Invited

  
• High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies

  Tsunenobu Kimoto; Keita Tachiki; Koji Ito; Kyota Mikami; Mitsuaki Kaneko; Masahiro Horita; Jun Suda

  14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022), 30 Aug. 2022, Invited

  
• High-Temperature Operation of SiC JFET-Based Complementary Circuits

  M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto

  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 08 Jul. 2022, Invited

  
• Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices

  Tsunenobu Kimoto; Akifumi Iijima; Mitsuaki Kaneko

  241st Electrochemical Society Meeting, 30 May 2022, Invited

  
• Physics and Innovative Technologies in SiC Power Devices

  Tsunenobu Kimoto; Mitsuaki Kaneko; Keita Tachiki; Koji Ito; Ryoya Ishikawa; Xilun Chi; Dionysios Stefanakis; Takuma Kobayashi; Hajime Tanaka

  67th IEEE Int. Electron Devices Meeting, 15 Dec. 2021, Invited

  
• A New Horizon of SiC Technology Driven by Deeper Understanding of Physics

  Tsunenobu Kimoto; Mitsuaki Kaneko; Takuya Kobayashi; Hajime Tanaka; Keita Tachiki; Akihumi Iijima; Shoma Yamashita; Xilun Chi; Ying Zhao; Dionysios Stefanakis; Yu-ichiro Matsushita

  13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021), 28 Oct. 2021, Invited

  
• Mobility improvement in 4H-SiC MOSFETs by H2 etching before SiO2 deposition and interface nitridation

  Keita Tachiki; Koji Ito; Mitsuaki Kaneko; Tsunenobu Kimoto

  13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021), 26 Oct. 2021, Invited

  
• Progress and Future Challenges of SiC Power MOSFETs

  Tsunenobu Kimoto; Takuma Kobayashi; Keita Tachiki; Koji Ito; Mitsuaki Kaneko

  5th IEEE Electron Devices Technology and Manufacturing Conference 2021, 11 Apr. 2021, Invited

  
• Progress and Future Prospects of High-Voltage SiC Power Devices

  Tsunenobu Kimoto; Mitsuaki Kaneko

  2020 Int. Symp. on VLSI Technology, Systems and Applications, 11 Aug. 2020, Invited

  
• Progress and future challenges of SiC power devices for energy efficiency

  T. Kimoto; M. Kaneko

  12th Int. Symp. on Advanced Plasma Sci. & Its Applications for Nitrides and Nanomaterials (ISPlasma 2020), 09 Mar. 2020, Invited

  
• Breakdown Phenomena in High- and Low-Voltage SiC Devices

  T. Kimoto; X. Chi; Y. Zhao; H. Niwa; M. Kaneko

  Materials Research Meeting 2019, 11 Dec. 2019, Invited

  
• 高温動作集積回路を目指したノーマリオフ型p-JFETおよびn-JFETの同一SiC基板上への作製

  中島誠志; 金祺民; 金子光顕; 木本恒暢

  応用物理学会先進パワー半導体分科会 第6回講演会, 04 Dec. 2019, Invited

  
• SiCにおけるショックレー型積層欠陥の拡大/縮小臨界条件のモデリング

  金子光顕; 飯島彬文; 田中一; 木本恒暢

  応用物理学会 先進パワー半導体分科会 第5回個別討論会「ここまで来たSiC順方向劣化現象の理解と対策」, 17 Jun. 2019, Invited

  
• 400℃ operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate

  Masashi Nakjima; Mitsuaki Kaneko; Tsunenobu Kimoto

  European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), 10 Sep. 2018, Invited

  
• Intentional introduction of misfit dislocations at AlN/SiC heterointerface

  Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda

  6th Center for Integrated Research of Future Electronics Seminar: Seminar on Interface Control, 10 Aug. 2017, Invited

  
• Performance Improvement and Reliability Physics in SiC MOSFETs

  Tsunenobu Kimoto; Keita Tachiki; Akifumi Iijima; Mitsuaki Kaneko

  IEEE Int. Reliability Phys. Sympo., 30 Mar. 2022, Invited

  

Industrial Property Rights

• 特願2022-112930, ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ

  金子光顕; 柴田峻弥; 木本恒暢

  
• 特願2022-065535, ＳｉＣ相補型電界効果トランジスタ

  金子光顕; 松岡大雅; 木本恒暢

  
• 特願2020-104834, SiC相補型電界効果トランジスタ

  木本恒暢; 金子光顕; 中島誠志

  
• 特開2019-091873, 特願2018-036440, SiC接合型電界効果トランジスタ及びSiC相補型接合型電界効果トランジスタ

  木本 恒暢; 金子 光顕; 中島 誠志

  

Awards

• 29 Nov. 2024

  第13回(2024年度）研究開発奨励賞
• 06 Oct. 2023

  IEEE　EDS　Kansai Chapter　of　the　Year　Award
• 24 Jun. 2023

  一般財団法人　安藤研究所, Ando Incentive Prize for the Study of Electronics

  炭化ケイ素を用いた低消費電力厳環境動作ICの研究, Publisher
• 28 Apr. 2012

  第4回窒化物半導体結晶成長講演会, Encouragement Award
• 19 Oct. 2012

  窒化物半導体国際ワークショップ2012, Best Paper Award
• 17 Jul. 2015

  第34回電子材料シンポジウム, 34th Electronic Materials Symposium Award
• 13 Sep. 2015

  応用物理学会, Young Scientist Presentation Award
• 40 Apr. 2020

  FFIT, Funai Research Promotion Award

Media Coverage

• 京大、350℃で「SiC半導体IC」基本動作実証 相補型、消費電力抑える

  日刊工業新聞, Apr. 2022, Paper

  

External funds: Kakenhi

• Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature range

  Grant-in-Aid for Early-Career Scientists

  Basic Section 21060:Electron device and electronic equipment-related

  Kyoto University

  Mitsuaki Kaneko

  From 01 Apr. 2021, To 31 Mar. 2024, Project Closed

  炭化ケイ素;電界効果トランジスタ;論理回路;閾値電圧;イオン注入;厳環境;接合型電界効果トランジスタ;深いドナー

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21K14209/
• Materials Science and Device Physics in SiC toward Robust Electronics

  Grant-in-Aid for Scientific Research (S)

  Broad Section C

  Kyoto University

  木本 恒暢

  From 05 Jul. 2021, To 31 Mar. 2026, Granted

  炭化珪素;MOSFET;絶縁破壊;パワーデバイス;高温動作デバイス;MOS界面

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21H05003/
• 学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開

  Grant-in-Aid for Scientific Research (A)

  Medium-sized Section 21:Electrical and electronic engineering and related fields

  Kyoto University

  木本 恒暢

  From 05 Apr. 2021, To 31 Mar. 2022, Discontinued

  炭化珪素;MOS界面;酸化膜;MOSFET;チャネル移動度

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21H04563/
• Development of SiC hybrid integrated circuits operational under harsh environment

  Grant-in-Aid for Research Activity Start-up

  0302:Electrical and electronic engineering and related fields

  Kyoto University

  Mitsuaki Kaneko

  From 30 Aug. 2019, To 31 Mar. 2021, Project Closed

  炭化ケイ素;電界効果トランジスタ;論理回路;ハイブリッド;イオン注入;厳環境;接合型トランジスタ;炭化珪素;集積回路

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19K23515/
• Research on high-temperature operational SiC integrated circuit

  Grant-in-Aid for Early-Career Scientists

  Basic Section 21050:Electric and electronic materials-related

  Kyoto University

  金子 光顕

  From 01 Apr. 2024, To 31 Mar. 2027, Granted

  炭化ケイ素;電界効果トランジスタ;論理回路;デバイスモデル;ホール効果

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24K17307/

External funds: others

• 高温動作不揮発性メモリ実現に向けたAlBN強誘電体のSiC基板上への成長

  岩谷直治記念財団, 第51回岩谷科学技術研究助成

  From 01 Apr. 2025, To 31 Mar. 2026
• 高温環境で動作可能な大規模集積回路（LSI）

  キヤノン財団, 新産業を生む科学技術

  From 01 Apr. 2025, To 31 Mar. 2028
• 200℃以上の高温環境で動作するロジック半導体（集積回路）の実現

  科学技術振興機構（JST）, 大学発新産業創出基金事業　スタートアップ・エコシステム共創プログラム KSAC-GAPファンド

  From 01 Apr. 2025, To 31 Mar. 2026
• 厳環境エレクトロニクス実現に向けた炭化ケイ素電子デバイスの研究

  みずほ学術振興財団, 第67回工学研究助成

  From 01 Oct. 2024, To 30 Sep. 2025
• 異種原子ドープSiC半絶縁性基板へのイオン注入によるn型およびp型層の形成とその物性評価

  日本板硝子材料工学助成会, 令和6年度（第46回）研究助成

  From 01 Apr. 2024, To 31 Mar. 2027
• イオン注入による厳環境動作SiC集積回路の開発

  増屋記念基礎研究振興財団

  From 01 Apr. 2019, To 31 Mar. 2020

  金子光顕
• 超高温環境動作SiC集積回路の開発

  稲盛財団

  From 01 Apr. 2020, To 31 Mar. 2023

  金子光顕
• 超高温環境動作可能な相補型JFET集積回路の開発

  村田学術振興財団

  From 01 Jul. 2020, To 30 Jun. 2021

  金子光顕
• 厳環境動作集積回路実現に向けた炭化ケイ素半導体中のイオン注入時チャネリング量の同定

  池谷科学技術振興財団

  From 01 Apr. 2021, To 31 Mar. 2022

  金子　光顕
• 超高温動作可能な炭化ケイ素集積回路開発に関する研究

  サムコ科学技術振興財団

  From 01 Oct. 2021, To 30 Sep. 2022

  金子光顕

Education

Teaching subject(s)

• From 01 Apr. 2025, To 31 Mar. 2026

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From Apr. 2019, To Mar. 2020

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2020, To Mar. 2021

  Fundamental Practice of Electrical & Electronic Engineering

  Fall, 工学部
• From Apr. 2020, To Mar. 2021

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2021, To Mar. 2022

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部

Administration

Faculty management (title, position)

• From 01 Apr. 2019

  電気電子工学科　サマーキャンプ運営委員会
• From 01 Apr. 2020, To 31 Mar. 2022

  桂事業場環境安全衛生委員会　委員
• From 01 Apr. 2020

  電気電子工学科　学生実験9人委員
• From 01 May 2020

  工学部無期廃液処理実行委員会（電気系担当）

Academic, Social Contribution

Committee Memberships

• From Apr. 2025, To Present

  Member, 応用物理学会 関西支部
• From Mar. 2025, To Present

  会計, ICSCRM2026実行委員会
• From Apr. 2024, To Present

  Member, The Japan Society of Applied Physics, The Advanced Power Semiconductors Division
• From Mar. 2023, To Oct. 2023

  会場委員, 第42回EMS
• From Mar. 2022, To Oct. 2022

  会場委員, 第41回EMS
• From Apr. 2020, To Mar. 2024

  Treasurer [Permanent Member], The Japan Society of Applied Physics, The Advanced Power Semiconductors Division
• From Jan. 2019, To Oct. 2019

  ICSCRM 2019組織委員

Social Contribution

• 君たちはどう使うか？～半導体デバイスの課題と、挑戦の先に見える世界とは

  Panelist

  IVS2024, IVS2024, From 04 Jul. 2024, To 09 Jul. 2024