Japanese Journal of Applied Physics, 2021年04月28日, 査読有り
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures
Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto
Japanese Journal of Applied Physics, 2021年02月18日, 査読有り
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto
Applied Physics Express, 2021年01月29日, 査読有り
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
IEEE Transactions on Electron Devices, 2020年09月, 査読有り
Tunneling Current in 4H-SiC p-n Junction Diodes
M. Kaneko; X. Chi; T. Kimoto
IEEE Transactions on Electron Devices, 2020年08月, 査読有り, 筆頭著者
Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE
Mitsuaki Kaneko; Kazuto Hirai; Tsunenobu Kimoto; Jun Suda
Applied Physics Express, 2020年02月01日, 査読有り, 筆頭著者
Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
M. Nakajima; M. Kaneko; T. Kimoto
IEEE Electron Device Letters, 2019年06月, 査読有り
SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation
Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies
Kanegae Kazutaka; Kaneko Mitsuaki; Kimoto Tsunenobu; Horita Masahiro; Suda Jun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018年07月, 査読有り
High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
M. Kaneko; T. Kimoto
IEEE Electron Device Letters, 2018年05月01日, 査読有り
Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4 H - SiC (11 2 0)
M. Kaneko; S. Ueta; M. Horita; T. Kimoto; J. Suda
Applied Physics Letters, 2018年01月01日, 査読有り
Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
M. Kaneko; T. Kimoto; J. Suda
AIP Advances, 2017年01月01日, 査読有り
Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE
Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
Physica Status Solidi (B) Basic Research, 2016年05月01日, 査読有り
Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy
Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
Applied Physics Express, 2016年02月01日, 査読有り
Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy
Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu Kimoto; Jun Suda
Japanese Journal of Applied Physics, 2013年08月, 査読有り
Optical properties of highly strained AlN coherently grown on 6H-SiC(0001)
Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda
Applied Physics Express, 2013年06月, 査読有り
AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy
Ryosuke Kikuchi; Hironori Okumura; Mitsuaki Kaneko; Tsunenobu Kimoto; Jun Suda
Applied Physics Express, 2012年05月, 査読有り
Physics and Innovative Technologies in SiC Power Devices
T. Kimoto; M. Kaneko; K. Tachiki; K. Ito; R. Ishikawa; X. Chi; D. Stefanakis; T. Kobayashi; H. Tanaka
Tech. Digest of 67th IEEE Int. Electron Devices Meeting, 2022年03月09日
Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates
400℃ operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate