Japanese Journal of Applied Physics, 2021年04月28日, 査読有り
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures
Masahiro Hara; Mitsuaki Kaneko; Tsunenobu Kimoto
Japanese Journal of Applied Physics, 2021年02月18日, 査読有り
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Keita Tachiki; Mitsuaki Kaneko; Tsunenobu Kimoto
Applied Physics Express, 2021年01月29日, 査読有り
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
IEEE Transactions on Electron Devices, 2020年09月, 査読有り
Tunneling Current in 4H-SiC p-n Junction Diodes
M. Kaneko; X. Chi; T. Kimoto
IEEE Transactions on Electron Devices, 2020年08月, 査読有り, 筆頭著者
Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE
Mitsuaki Kaneko; Kazuto Hirai; Tsunenobu Kimoto; Jun Suda
Applied Physics Express, 2020年02月01日, 査読有り, 筆頭著者
Normally-off 400 °c Operation of n- and p-JFETs with a Side-Gate Structure Fabricated by Ion Implantation into a High-Purity Semi-Insulating SiC Substrate
M. Nakajima; M. Kaneko; T. Kimoto
IEEE Electron Device Letters, 2019年06月, 査読有り
SIC vertical-channel n-and P-JFETS fully fabricated by ion implantation
Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy
Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu Kimoto; Jun Suda
Japanese Journal of Applied Physics, 2013年08月, 査読有り, 筆頭著者, 責任著者
Optical properties of highly strained AlN coherently grown on 6H-SiC(0001)
Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato; Yoichi Kawakami; Tsunenobu Kimoto; Jun Suda
400℃ operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate