Basic Information

Faculty

• Faculty of Engineering

Professional Memberships

• From 2018, To Present

  The Japan Society of Vacuum and Surface Science
• From 2017, To Present

  IEEE (Institute of Electrical and Electronics Engineers)
• From 2011, To Present

  原子衝突研究協会/原子衝突学会
• From 2005, To Present

  AVS (American Vacuum Society)
• From 1988, To Present

  Institute of Electronics, Information and Communication Engineers
• From 1985, To Present

  The Japan Society of Applied Physics
• From 1994, To 2017

  The Vacuum Society of Japan
• International Field Emission Society

Academic Degree

• 工学修士(京都大学)
• 博士（工学）(京都大学)

Academic Resume (Graduate Schools)

• 京都大学, 大学院工学研究科修士課程電子工学専攻, 修了

Academic Resume (Undergraduate School/Majors)

• 京都大学, 工学部電子工学科, 卒業

Research History

• From Apr. 2007, To Present

  Kyoto University, Graduate School of Engineering Department of Electronic Science and Engineering, Associate Professor
• From Apr. 2003, To Mar. 2007

  Kyoto University, Graduate School of Engineering Department of Electronic Science and Engineering, Associate Professor
• From Mar. 2003, To Mar. 2003

  Kyoto University, Graduate School of Engineering Department of Electronic Science and Engineering, Associate Professor
• From Apr. 1995, To Feb. 2003

  Kyoto University, Graduate School of Engineering Department of Electronic Science and Engineering, Research Associate
• From Jun. 1990, To Mar. 1995

  Kyoto University, Faculty of Engineering, Instructor
• From Apr. 1987, To May 1990

  Toyota Central Reseach and Development Laboratories., Inc.

Language of Instruction

• English

ID,URL

• J-Global ID

  200901030179343414

researchmap URL

• https://researchmap.jp/read0012724

Research

Research Topics, Overview of the research

• Research Topics

  Electron and ion formation by field emission, Thin film formation and microfabrication with energetic particles, Microscopic mass spectroscopy with atomic spatial resolution

• Overview of the research

  My major interest is the physics under high electric field and/or bombardment of energetic particles. The research topics also include the application of the physics to such technologies that generation and transportation of charged particles, thin-film and micro-fabrication, and micro-analysis. Recently, studies on microscopic mass spectroscopy with atomic spatial resolution, of which basis is the principle of field emission microscope, have been started.

Research Interests

• Ion beam
• Thin films
• 真空ナノエレクトロニクス
• 電界放出
• Ion Beam
• Thin Films
• Vacuum Nanoelectronics
• Field Emission

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
• Nanotechnology/Materials, Thin-film surfaces and interfaces

Papers

• Observation of cathodoluminescence of germanium-implanted quartz glass excited by low-energy electrons emitted from silicon field emitter array

  Hiroshi Tsuji; Akira Sakata; Go Miyagawa; Yoshiki Yasutomo; Yasuhito Gotoh

  Proceedings of the International Display Workshops, 2012

  
• Effect of electrode geometry on focusing properties of volcano-structured double-gate Spindt-type FEAs

  Yasuhito Gotoh; Hiroshi Tsuji; Masayoshi Nagao

  Proceedings of the International Display Workshops, 2015

  
• Scanning Tunneling Microsope Observation of Graphite Surface Irradiated by Low Energy Argon Ions

  KUBO Hiroshi; GOTOH Yasuhito; TSUJI Hiroshi; ISHIKAWA Junzo

  真空, 20 Mar. 1998

  
• Evaluation of Ge Oxidation State in Ge Nanoparticles Formed in Thin SiO₂ Layer by Negative-Ion Implantation and Successive Two-Stage Annealing

  Tsuji Hiroshi; Kato Mikio; Mayama Norihito; Sasaki Tomokazu; Nomura Eiichi; Gotoh Yasuhito

  Transactions of the Materials Research Society of Japan, 2016, Peer-reviewed

  
• Luminescence of SiO₂ Film Implanted with Ge Negative Ions

  Arai Nobutoshi; Tsuji Hiroshi; Harada Masatomi; Hattori Masashi; Satoh Tuyoshi; Ohsaki Masayuki; Kotaki Hiroshi; Ishibashi Toyotsugu; Gotoh Yasuhito; Ishikawa Junzo

  Trans. Mat. Res. Soc. Japan, 2010, Peer-reviewed

  
• Degradation of Proteins for Neural Cell Adhesion Patterning by Carbon Negative-Ion Implantation

  Tsuji Hiroshi; Sommani Piyanuch; Sato Hiroko; Gotoh Yasuhito; Ishikawa Junzo; Takaoka Gikan

  Trans. Mat. Res. Soc. Japan, 2011, Peer-reviewed

  
• Cell-Adhesion Patterning by using Carbon Negative-Ion Implantation into Albumin and Avidin Layers on Polystyrene

  Sommani Piyanuch; Tsuji Hiroshi; Sato Hiroko; Gotoh Yasuhito; Ishikawa Junzo; Takaoka Gikan

  Trans. Mat. Res. Soc. Japan, 2011, Peer-reviewed

  
• Osteoblast Patterning on Silicone Rubber by using Mesenchymal Stem Cells and Carbon Negative-Ion Implantation

  Sommani Piyanuch; Tsuji Hiroshi; Sato Hiroko; Gotoh Yasuhito; Takaoka Gikan H.

  Trans. Mat. Res. Soc. Japan, 2011, Peer-reviewed

  
• Titanium Dioxide Thin Film Deposition on Ag-Nanoparticles Embedded Silica Glass and Its Photocatalytic Properties

  Tsuji Hiroshi; Miyagawa Go; Gotoh Yasuhito

  Trans. Mat. Res. Soc. Japan, 2014, Peer-reviewed

  
• Gamma-ray irradiation effects on CdTe solar cell dosimeter

  Tamotsu Okamoto; Tomoya Igari; Takahiro Fukui; Ryuto Tozawa; Yasuhito Gotoh; Nobuhiro Sato; Yasuki Okuno; Tomohiro Kobayashi; Mitsuru Imaizumi; Masafumi Akiyoshi

  Japanese Journal of Applied Physics, 01 May 2021, Peer-reviewed

  
• Development of a Field Emission Image Sensor Tolerant to Gamma-Ray Irradiation

  Yasuhito Gotoh; Hiroshi Tsuji; Masayoshi Nagao; Tomoaki Masuzawa; Yoichiro Neo; Hidenori Mimura; Tamotsu Okamoto; Tomoya Igari; Masafumi Akiyoshi; Nobuhiro Sato; Ikuji Takagi

  IEEE Transactions on Electron Devices, Apr. 2020, Peer-reviewed

  
• Fluctuations of the emission characteristics of multi-tip field cathodes

  Anatoly G. Kolosko; Eugeni O. Popov; Sergey V. Filippov; Yasuhito Gotoh

  Journal of Vacuum Science & Technology B, May 2019, Peer-reviewed

  
• Observation of DC field-evaporated ion species extracted from transition metal nitride thin film deposited on tungsten-tip

  Chikasa Nishimura; Yuki Haneji; Hiroshi Tsuji; Yasuhito Gotoh

  Surface and Interface Analysis, Jan. 2019, Peer-reviewed

  
• System for evaluation of electron emission properties of field emitter arrays under x-ray irradiation

  Yasuhito Gotoh; Hiroshi Tsuji; Masayoshi Nagao; Masafumi Akiyoshi; Ikuji Takagi

  Journal of the Vacuum Society of Japan, Aug. 2017, Peer-reviewed

  
• Characterization of the electron emission properties of hafnium nitride field emitter arrays at elevated temperatures

  Yasuhito Gotoh; Wataru Ohue; Hiroshi Tsuji

  JOURNAL OF APPLIED PHYSICS, Jun. 2017, Peer-reviewed

  
• Work functions of hafnium nitride thin films as emitter material for field emitter arrays

  Yasuhito Gotoh; Sho Fujiwara; Hiroshi Tsuji

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, May 2016, Peer-reviewed

  
• Gamma-ray tolerance of CdS/CdTe photodiodes for radiation tolerant compact image sensor with field emitter array

  Tamotsu Okamoto; Tomoya Igari; Yasuhito Gotoh; Nobuhiro Sato; Masafumi Akiyoshi; Ikuji Takagi

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, Peer-reviewed

  
• Beam profile measurement of volcano-structured double-gate Spindt-type field emitter

  Nagao Masayoshi; Gotoh Yasuhito; Neo Yoichiro; Mimura Hidenori

  Journal of Vacuum Science & Technology B, 2016, Peer-reviewed

  
• Field ion microscope observation of tungsten surface processed in ethanol

  Susumu Hogyoku; Sho Fujiwara; Hiroshi Tsuji; Yasuhito Gotoh

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Aug. 2014, Peer-reviewed

  
• Characteristics of hafnium nitride field emitter array at low temperatures

  Yasuhito Gotoh; Yoshiki Yasutomo; Hiroshi Tsuji

  Journal of the Vacuum Society of Japan, Apr. 2014, Peer-reviewed

  
• Control of work function of indium tin oxide: A surface treatment by atmospheric-pressure plasma layer on fabric-type electrodes

  Yoshihiko Ueda; Junichi Abe; Hideyuki Murata; Yasuhito Gotoh; Osamu Sakai

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• Emittance of compact microwave ion source for low energy application

  Yasuhito Gotoh; Shuhei Taguchi; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2014, Peer-reviewed

  
• Energy dependence of non-Rutherford proton elastic scattering spectrum for hafnium nitride thin film

  Yasuhito Gotoh; Wataru Ohue; Hiroshi Tsuji

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Nov. 2013, Peer-reviewed

  
• Vacuum frequency mixer with a field emitter array

  Yasuhito Gotoh; Yoshiki Yasutomo; Hiroshi Tsuji

  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Sep. 2013, Peer-reviewed

  
• Neutralization of Space Charge on High-Current Low-Energy Ion Beam by Low-Energy Electrons Supplied from Silicon Based Field Emitter Arrays

  Yasuhito Gotoh; Hiroshi Tsuji; Shuhei Taguchi; Keita Ikeda; Takayuki Kitagawa; Junzo Ishikawa; Shigeki Sakai

  ION IMPLANTATION TECHNOLOGY 2012, 2012, Peer-reviewed

  
• Neutralization of space charge in magnetic field by electrons supplied from silicon based field emitter arrays

  Tomohiro Daimaru; Shigeki Sakai; Yasuhito Gotoh

  ION IMPLANTATION TECHNOLOGY 2012, 2012, Peer-reviewed

  
• Surface modification of silica glass by CHF₃ plasma treatment and carbon negative-ion implantation for cell pattern adhesion

  Hiroshi Tsuji; Piyanuch Sommani; Yuichiro Hayashi; Hiroyuki Kojima; Hiroko Sato; Yasuhito Gotoh; Gikan Takaoka; Junzo Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Nov. 2011, Peer-reviewed

  
• Line-width of ion beam-modified polystyrene by negative carbon ions for fine adhesion pattern of mesenchymal stem cells

  Piyanuch Sommani; Hiroshi Tsuji; Hiroyuki Kojima; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa; Gikan Takaoka

  SURFACE & COATINGS TECHNOLOGY, Nov. 2011, Peer-reviewed

  
• Germanium negative-ion implantation into SiO₂ layer on Si Photoluminescence properties and oxidation state of Ge atoms in subsequent heat treatment

  Hiroshi Tsuji; Nobutoshi Arai; Masashi Hattori; Masayuki Ohsaki; Yasuhito Gotoh; Junzo Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Nov. 2011, Peer-reviewed

  
• Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles

  Dan Nicolaescu; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, Jul. 2011, Peer-reviewed

  
• Compensation of space charge for positive ion beams using electron injection and confinement in nonuniform magnetic fields

  Dan Nicolaescu; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2011, Peer-reviewed

  
• Development of a vacuum transistor using hafnium nitride field emitter arrays

  Keita Ikeda; Wataru Ohue; Keisuke Endo; Yasuhito Gotoh; Hiroshi Tsuji

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2011, Peer-reviewed

  
• Compensation of space charge for positive ion beams using electron injection and confinement in nonuniform magnetic fields

  Dan Nicolaescu; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 2011, Peer-reviewed

  
• Ge negative ion tilt implantation into thermally grown silicon dioxide thin layer and photoluminescence property

  Shohei Kinoshita; Hiroshi Tsuji; Nobutoshi Arai; Yasuhito Gotoh

  Journal of the Vacuum Society of Japan, 2011, Peer-reviewed

  
• Irradiation effect of carbon negative-ion implantation on polytetrafluoroethylene for controlling cell-adhesion property

  Piyanuch Sommani; Hiroshi Tsuji; Hiroyuki Kojima; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa; Gikan H. Takaoka

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Oct. 2010, Peer-reviewed

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• Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array

  Mitsuaki Takeuchi; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2010, Peer-reviewed

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• Development of in situ analyzer of field-emission devices

  Michito Kawasaki; Zhen He; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2010, Peer-reviewed

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• Ion Beam Neutralization Using FEAs and Mirror Magnetic Fields

  Dan Nicolaescu; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  ION IMPLANTATION TECHNOLOGY 2010, 2010, Peer-reviewed

  
• Collimator Magnet with Functionally Defined Profile for Ion Implantation

  Dan Nicolaescu; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  ION IMPLANTATION TECHNOLOGY 2010, 2010, Peer-reviewed

  
• Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays

  Junzo Ishikawa; Yasuhito Gotoh; Mitsuaki Takeuchi; Shuhei Taguchi; Dan Nicolaescu; Hiroshi Tsuji; Tsunenobu Kimoto; Shigeki Sakai

  ION IMPLANTATION TECHNOLOGY 2010, 2010, Peer-reviewed

  
• Optimization of Compact Microwave Ion Source for Generation of High Current and Low Energy Ion Beam

  Shuhei Taguchi; Yasuhito Gotoh; Hiroshi Tsuji; Shigeki Sakai; Junzo Ishikawa

  ION IMPLANTATION TECHNOLOGY 2010, 2010, Peer-reviewed

  
• Surface Modification of Silicone Rubber for Adhesion Patterning of Mesenchymal Stem Cells by Water Cluster Ion Beam

  Piyanuch Sommani; Gaku Ichihashi; Hiromichi Ryuto; Hiroshi Tsuji; Yasuhito Gotoh; Gikan H. Takaoka

  ION IMPLANTATION TECHNOLOGY 2010, 2010, Peer-reviewed

  
• Piezoelectric Pb(Zr_0.52Ti_0.48)O₃ thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

  Meiyong Liao; Yasuhito Gotoh; Hiroshi Tsuji; Kiyomi Nakajima; Masataka Imura; Yasuo Koide

  JOURNAL OF APPLIED PHYSICS, Jan. 2010, Peer-reviewed

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• Fine adhesion patterning and aligned nuclei orientation of mesenchymal stem cell on narrow line-width of silicone rubber implanted by carbon negative ions

  Piyanuch Sommani; Hiroshi Tsuji; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa; Gikan H. Takaoka

  Journal of the Vacuum Society of Japan, 2010, Peer-reviewed

  
• Luminescence properties of Ge implanted SiO₂: Ge and GeO₂:Ge films

  Nobutoshi Arai; Hiroshi Tsuji; Masashi Hattori; Masayuki Ohsaki; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  APPLIED SURFACE SCIENCE, Nov. 2009, Peer-reviewed

  
• Surface modification by negative-ion implantation

  Junzo Ishikawa; Hiroshi Tsuji; Yasuhito Gotoh

  SURFACE & COATINGS TECHNOLOGY, Jun. 2009, Peer-reviewed

  
• Negative ion implantation for pattering mesenchymal-stem cell adhesion on silicone rubber and differentiation into nerve cells with keeping their adhesion pattern

  Hiroshi Tsuji; Piyanuch Sommani; Mitsutaka Hattori; Tetsuya Yamada; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Jun. 2009, Peer-reviewed

  
• Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target

  T. Kanzawa; N. Setojima; Y. Miyata; Y. Gotoh; H. Tsuji; J. Ishikawa

  VACUUM, Oct. 2008, Peer-reviewed

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• Adhesion patterning of mesenchymal stem cells on polystyrene surface by carbon negative-ion implantation and neuron differentiation on the position

  Hiroshi Tsuji; Piyanuch Sommani; Mitsutaka Hattori; Tetsuya Yamada; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jun. 2008, Peer-reviewed

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• Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation

  A. Oowada; M. Takeuchi; Y. Sakai; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2008, Peer-reviewed

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• Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

  Mitsuaki Takeuchi; Toshihiko Kojima; Atsushi Oowada; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Sigeki Sakai; Tsunenobu Kimoto

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2008, Peer-reviewed

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• Modeling of linear carbon nanotube nanotriodes with improved field uniformity

  D. Nicolaescu; V. Filip; Y. Gotoh; J. Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2008, Peer-reviewed

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• Germanium nanoparticles formation in silicon dioxide layer by multi-energy implantation of Ge negative ions and their photo-luminescence

  Nobutoshi Arai; Hiroshi Tsuji; Hiroyuki Nakatsuka; Kenji Kojima; Kouichirou Adachi; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Feb. 2008, Peer-reviewed

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• Development of low energy ion beam system for space charge compensation experiments

  Mitsuaki Takeuchi; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2008, Peer-reviewed

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• Neutralization of Space Charge Effects for Low Energy Ion Beams Using Field Emitters

  D. Nicolaescu; S. Sakai; K. Matsuda; Y. Gotoh; J. Ishikawa

  ION IMPLANTATION TECHNOLOGY 2008, 2008, Peer-reviewed

  
• Energy distribution measurements of silicon field emitter arrays with a hemispherical energy analyzer

  Yoshiki Sakai; Atsushi Oowada; Mitsuaki Takeuchi; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai; Tsunenobu Kimoto

  Journal of the Vacuum Society of Japan, 2008, Peer-reviewed

  
• Durability evaluation of hafnium nitride field emitter array

  Yuko Miyata; Taro Kanzawa; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Journal of the Vacuum Society of Japan, 2008, Peer-reviewed

  
• Silver negative-ion implantation into thermally grown thin SiO2 film on Si substrate and heat treatment for formation of silver nanoparticles

  Nobutoshi Arai; Hiroshi Tsuji; Kouichirou Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Sep. 2007, Peer-reviewed

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• Germanium nanoparticle formation in thin oxide films on Si by negative-ion implantation

  Hiroshi Tsuji; Nobutoshi Arai; Naoyuki Gotoh; Takashi Minotani; Toyotsugu Ishibashi; Tetsuya Okumine; Kouichiro Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Aug. 2007, Peer-reviewed

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• Thermal diffusion behavior of implanted germanium atoms in silicon dioxide film measured by high-resolution RBS

  Nobutoshi Arai; Hiroshi Tsuji; Naoyuki Gotoh; Takashi Minotani; Toyotsugu Ishibashi; Tetsuya Okumine; Kouichirou Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Aug. 2007, Peer-reviewed

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• Nerve-cell attachment properties of polystyrene and silicone rubber modified by carbon negative-ion implantation

  H. Tsuji; P. Sommani; T. Kitamura; M. Hattori; H. Sato; Y. Gotoh; J. Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Aug. 2007, Peer-reviewed

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• Ion implantation of negative ions for cell growth manipulation and nervous system repair

  Junzo Ishikawa; Hiroshi Tsuji; Hiroko Sato; Yasuhito Gotoh

  SURFACE & COATINGS TECHNOLOGY, Aug. 2007, Peer-reviewed

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• Derivation of length of carbon nanotube responsible for electron emission from field emission characteristics

  Y. Gotoh; Y. Kawamura; T. Niiya; T. Ishibashi; D. Nicolaescu; H. Tsuji; J. Ishikawa; A. Hosono; S. Nakata; S. Okuda

  APPLIED PHYSICS LETTERS, May 2007, Peer-reviewed

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• Minimum line width of ion beam-modified polystyrene by negative carbon ions for nerve-cell attachment and neurite extension

  P. Sommani; H. Tsuji; H. Sato; T. Kitamura; M. Hattori; Y. Gotoh; J. Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Apr. 2007, Peer-reviewed

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• Nanoparticle formation in 25-nm-SiO₂ thin layer by germanium negative-ion implantation and its capacitance-voltage characteristics

  Hiroshi Tsuji; Nobutoshi Arai; Naoyuki Gotoh; Takashi Minotani; Kenji Kojima; Kouichiro Adachi; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Apr. 2007, Peer-reviewed

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• Work function of low index crystal facet of tungsten evaluated by the Seppen-Katamuki analysis

  Y. Gotoh; K. Mukai; Y. Kawamura; H. Tsuji; J. Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2007, Peer-reviewed

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• Analytical modeling for the electron emission properties of carbon nanotube arrays

  D. Nicolaescu; V. Filip; G. H. Takaoka; Y. Gotoh; J. Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2007, Peer-reviewed

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• Cathode luminescence from SiO₂ layer including Ge nanoparticles formed by negative-ion implantation

  Hiroshi Tsuji; Nobutoshi Arai; Naoyuki Gotoh; Takashi Minotani; Kenji Kojima; Kouichiro Adachi; Hiroshi Kotaki; Katsumi Takahiro; Toyogi Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4, 2007, Peer-reviewed

  
• Mesenchymal stem cell attachment properties on silicone rubber modified by carbon negative-ion implantation

  Piyanuch Sommani; Hiroshi Tsuji; Hiroko Sato; Mitsutaka Hattori; Tetsuya Yamada; Yasuhito Gotoh; Junzo Ishikawa

  TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4, 2007, Peer-reviewed

  
• Raman spectroscopy of ge nanoparticles formed in thin SiO₂ films by negative ion implantation

  Nobutoshi Arai; Hiroshi Tsuji; Takashi Minotani; Hiroyuki Nakatsuka; Kenji Kojima; Kouichirou Adachi; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4, 2007, Peer-reviewed

  
• Modification limit in line width of carbon negative-ion implantation to polystyrene surface for nerve-cell adhesion and neurite outgrowth

  Hiroshi Tsuji; Piyanuch Sommani; Mitsutaka Hattori; Tetsuya Yamada; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa

  TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4, 2007, Peer-reviewed

  
• Protein adsorption properties on silicone rubber modified by carbon negative-ion implantation

  Piyanuch Sommani; Hiroshi Tsuji; Hiroko Sato; Mitsutaka Hattori; Tetsuya Yamada; Yasuhito Gotoh; Junzo Ishikawa

  TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4, 2007, Peer-reviewed

  
• Effect of C-implantation on nerve-cell attachment to polystyrene films

  Piyanuch Sommani; Hiroshi Tsuji; Tsuyoshi Kitamura; Mitsutaka Hattori; Tetsuya Yamada; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2007, Peer-reviewed

  
• Estimation of protein absorption on polymer material by carbon-negative ion implantation

  Tetsuya Yamada; Hiroshi Tsuji; Mitsutaka Hattori; Piyanuch Sommani; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2007, Peer-reviewed

  
• Long time operation of Si:C field emitter arrays in H₂ gas atmosphere

  A. Oowada; T. Kojima; M. Takeuchi; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto

  Shinku/Journal of the Vacuum Society of Japan, 2007, Peer-reviewed

  
• Work function measurement of transition metal nitride and carbide thin films

  R Fujii; Y Gotoh; MY Liao; H Tsuji; J Ishikawa

  VACUUM, May 2006, Peer-reviewed

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• Development of a compact angle-resolved secondary ion mass spectrometer for Ar⁺ sputtering

  S Kawaguchi; M Tanemura; M Kudo; N Handa; N Kinoshita; L Miao; S Tanemura; Y Gotoh; MY Liao; S Shinkai

  VACUUM, May 2006, Peer-reviewed

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• Negative-ion implantation into thin SiO₂ layer for defined nanoparticle formation

  H Tsuji; N Arai; N Gotoh; T Minotani; T Ishibashi; T Okumine; K Adachi; H Kotaki; Y Gotoh; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Mar. 2006, Peer-reviewed

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• Neurite outgrowth properties on spin-coated polystyrene modified by carbon negative-ion implantation through pattern mask

  Piyanuch Sommani; Hiroshi Tsuji; Hiroko Sato; Tsuyoshi Kitamura; Mitsutaka Hattori; Yasuhito Gotoh; Junzo Ishikawa

  Transactions of the Materials Research Society of Japan, Vol 31, No 3, 2006, Peer-reviewed

  
• Electrical characteristics of thin SiO₂ film including Ge nanoparticles formed by negative ion implantation

  Nobutoshi Arai; Hiroshi Tsuji; Toshio Yanagitani; Tetsuya Okumine; Naoyuki Gotoh; Takashi Minotani; Hiroyuki Nakatsuka; Kenji Kojima; Hitoshi Ohnishi; Takeshi Satoh; Masatomi Harada; Kouichirou Adachi; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  Transactions of the Materials Research Society of Japan, Vol 31, No 3, 2006, Peer-reviewed

  
• Nerve cell attachment properties on spin-coated polystyrene modified by carbon negative-ion implantation

  Piyanuch Sommani; Hiroshi Tsuji; Hiroko Sato; Tsuyoshi Kitamura; Mitsutaka Hattori; Yasuhito Gotoh; Junzo Ishikawa

  Transactions of the Materials Research Society of Japan, Vol 31, No 3, 2006, Peer-reviewed

  
• Germanium nanoparticle formation into Thin SiO₂ films by negative ion implantation and their electric characteristics

  Nobutoshi Arai; Hiroshi Tsuji; Naoyuki Gotoh; Tetsuya Okumine; Toshio Yanagitani; Masatomi Harada; Takeshi Satoh; Hitoshi Ohnishi; Takashi Minotani; Kouichirou Adachi; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

  ION IMPLANTATION TECHNOLOGY, 2006, Peer-reviewed

  
• Diflusion barrier for silver atoms in thermally grown oxide layer on silicon and mono-layered Ag nanocrystals formed by negative-ion implantation and subsequent annealing

  Tsuji Hiroshi; Arai Nobutoshi; Gotoh Naoyuki; Minotani Takashi; Ishibashi Toyotsugu; Kimura Kenji; Nakajima Kaoru; Okumine Tetsuya; Adachi Koulchlro; Kotaki Hiroshi; Gotoh Yasuhito; Ishikawa Junzo

  Transactions of the Materials Research Society of Japan, Vol 31, No 3, 2006, Peer-reviewed

  
• Thermal diffusion barrier for Ag atoms implanted in silicon dioxide layer on silicon substrate and monolayer formation of nanoparticles

  Hiroshi Tsuji; Nobutoshi Arai; Naoyuki Gotoh; Takashi Minotani; Toyotsugu Ishibashi; Tetsuya Okumine; Kouichiro Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  ION IMPLANTATION TECHNOLOGY, 2006, Peer-reviewed

  
• Formation of silver nanoparticles aligned near the bottom of SiO₂ film silicon substrate by negative-ion implantation and post-annealing

  N Arai; H Tsuji; K Ueno; T Matsumoto; N Gotoh; K Aadachi; H Kotaki; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jan. 2006, Peer-reviewed

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• Photocatalytic properties of sol-gel titania film under fluorescent-light irradiation improved by silver negative-ion implantation

  H Tsuji; N Sakai; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jan. 2006, Peer-reviewed

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• Formation of mono-layered gold nanoparticles in shallow depth of SiO₂ thin film by low-energy negative-ion implantation

  H Tsuji; N Arai; K Ueno; T Matsumoto; N Gotoh; K Adachi; H Kotaki; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jan. 2006, Peer-reviewed

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• Angle dependent sputtering and dimer formation from vanadium nitride target by Ar⁺ ion bombardment

  S. Kawaguchi; M. Kudo; M. Tanemura; L. Miao; S. Tanemura; Y. Gotoh; M. Liao; S. Shinkai

  AICAM 2005, 2006, Peer-reviewed

  
• Diffusion measurement of silver atoms implanted into thermally grown oxide thin film on silicon substrate by high-resolution RBS and mono-layered silver nanoparticle formation by using diffusion barrier

  Hiroshi Tsuji; Nobutoshi Arai; Hiroyuki Nakatsuka; Naoyuki Gotoh; Takashi Minotani; Kenji Kojima; Kenji Kimura; Kaoru Nakajima; Tetsuya Okumine; Kouichiro Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2006, Peer-reviewed

  
• Electric characteristics of thin SiO₂ film embedded with Ge nanoparticles formed by negative ion implantation

  Nobutoshi Arai; Hiroshi Tsuji; Naoyuki Gotoh; Takashi Minotani; Hiroyuki Nakatsuka; Kenji Kojima; Toshio Yanagitani; Tetsuya Okumine; Hitoshi Ohnishi; Takeshi Satoh; Masatomi Harada; Kouichirou Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2006, Peer-reviewed

  
• Deposition of vanadium carbide thin films using compound target sputtering and their field emission

  MY Liao; Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Sep. 2005, Peer-reviewed

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• HfN薄膜からのスパッタイオンの放出角度分布測定

  川口慎一; 種村眞幸; 種村 榮; 後藤康仁; 廖 梅勇; 新海聡子

  表面科学, Aug. 2005, Peer-reviewed

  
• Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation

  H Tsuji; P Sommani; T Muto; Y Utagawa; S Sakai; H Sato; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Aug. 2005, Peer-reviewed

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• Silver negative-ion implantation to sol-gel TiO₂ film for improving photocatalytic property under fluorescent light

  H Tsuji; N Sakai; H Sugahara; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Aug. 2005, Peer-reviewed

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• Formation of almost delta-layered nanoparticles in SiO2 thin film on Si substrate by metal negative-ion implantation

  J Ishikawa; H Tsuji; N Arai; T Matsumoto; K Ueno; K Adachi; H Kotaki; Y Gotoh

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Aug. 2005, Peer-reviewed

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• Silicon field emission array as novel charge neutralization device for high current ion implanter

  J Ishikawa; Y Gotoh; K Nakamura; T Kojima; H Tsuji; T Ikejiri; S Sakai; S Umisedo; N Nagai; M Nagao; S Kanemaru

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Aug. 2005, Peer-reviewed

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• Evaluation of nanoparticles embedded in thin silicon dioxide film by optical reflection property

  N Arai; H Tsuji; K Ueno; T Matsumoto; Y Gotoh; K Adachi; H Kotaki; J Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Jun. 2005, Peer-reviewed

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• Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation

  H Tsuji; N Arai; T Matsumoto; K Ueno; K Adachi; H Kotaki; Y Gotoh; J Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Jun. 2005, Peer-reviewed

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• Energy distribution of electrons emitted from silicon field emitter arrays

  Toshihiko Kojima; Kouji Nakamura; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Tadashi Ikejiri; Sei Umisedo; Shigeki Sakai; Nobuo Nagai

  Shinku/Journal of the Vacuum Society of Japan, 2005, Peer-reviewed

  
• Seppen-katamuki analysis of field emission from carbon nanotubes after KrF-excimer laser irradiation

  Yoshinori Kawamura; Katsuyuki Ishizu; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Shuuhei Nakata; Souichiro Okuda

  Shinku/Journal of the Vacuum Society of Japan, 2005, Peer-reviewed

  
• Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature

  H Tsuji; N Arai; T Matsumoto; K Ueno; Y Gotoh; K Adachi; H Kotaki; J Ishikawa

  APPLIED SURFACE SCIENCE, Nov. 2004, Peer-reviewed

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• Compound-target sputtering for niobium carbide thin-film deposition

  MY Liao; Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Sep. 2004, Peer-reviewed

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• Surface treatment of silicone rubber by carbon negative-ion implantation for nerve regeneration

  H Tsuji; M Izukawa; R Ikeguchi; R Kakinoki; H Sato; Y Gotoh; J Ishikawa

  APPLIED SURFACE SCIENCE, Jul. 2004, Peer-reviewed

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• A study of TaN film field electron emitter material by a Kelvin probe force microscope

  K Miya; M Sasaki; S Yamamoto; Y Gotoh; Y Kawamura; J Ishikawa

  MICROELECTRONIC ENGINEERING, May 2004, Peer-reviewed

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• Electron emission properties of Spindt-type platinum field emission cathodes

  Y Gotoh; M Nagao; D Nozaki; K Utsumi; K Inoue; T Nakatani; T Sakashita; K Betsui; H Tsuji; J Ishikawa

  JOURNAL OF APPLIED PHYSICS, Feb. 2004, Peer-reviewed

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• Growth and stress evolution of hafnium nitride films sputtered from a compound target

  MY Liao; Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Jan. 2004, Peer-reviewed

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• Crystallographic structure and composition of vanadium nitride films deposited by direct sputtering of a compound target

  MY Liao; Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Jan. 2004, Peer-reviewed

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• Discharge characteristics of micro gas jet ion source

  Chikara Ichihara; Akira Kobayashi; Yasuhito Gotoh; Ken-Ichi Inoue; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2004, Peer-reviewed

  
• Selective neurite outgrowth on silver negative ion Ag^--implanted polystyrene surfaces

  H Sato; H Tsuji; H Sasaki; S Ikemura; Y Gotoh; J Ishikawa; SI Nishimoto

  CHINESE JOURNAL OF POLYMER SCIENCE, Dec. 2003, Peer-reviewed

  
• Study on optical reflection property from multilayer on Si substrate including nanoparticles in SiO2 layer

  Nobutoshi Arai; Hiroshi Tsuji; Masanori Motono; Hiromitsu Sugawara; Takuya Matsumoto; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, Sep. 2003, Peer-reviewed

  
• Field electron emission from nanostructured heterogeneous HfN_xO_y films

  MY Liao; Y Gotoh; H Tsuji; J Ishikawa

  APPLIED PHYSICS LETTERS, Aug. 2003, Peer-reviewed

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• On the stability of electronic perturbations on a graphite surface produced by low-energy ion bombardment

  Y Gotoh; T Hagiwara; Y Tanaka; H Kubo; H Tsuji; J Ishikawa

  MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Jul. 2003, Peer-reviewed

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• Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target

  Y Gotoh; MY Liao; H Tsuji; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jul. 2003, Peer-reviewed

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• Measurement of work function of transition metal nitride and carbide thin films

  Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2003, Peer-reviewed

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• In situ analyzer of electron emission properties: Fowler-Nordheim plotter and Seppen-Katamuki plotter

  Y Gotoh; K Ishizu; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2003, Peer-reviewed

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• Formation of silver nanoparticles in thin oxide layer on Si by negative-ion implantation

  N Arai; H Tsuji; M Motono; Y Gotoh; K Adachi; H Kotaki; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2003, Peer-reviewed

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• Study on optical reflection property from multilayer on Si substrate including nanoparticles in SiO₂ layer

  H Tsuji; N Arai; M Motono; Y Gotoh; K Adachi; H Kotaki; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2003, Peer-reviewed

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• Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation

  H Tsuji; M Izukawa; R Ikeguchi; R Kakinoki; H Sato; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2003, Peer-reviewed

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• Improvement of photocatalytic efficiency of rutile titania by silver negative-ion implantation

  H Tsuji; H Sugahara; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2003, Peer-reviewed

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• R&D of diamond films in the Frontier Carbon Technology Project and related topics

  K Kobashi; Y Nishibayashi; Y Yokota; Y Ando; T Tachibana; N Kawakami; K Hayashi; K Inoue; K Meguro; H Imai; H Furata; T Hirao; K Oura; Y Gotoh; H Nakahara; H Tsuji; J Ishikawa; FA Koeck; RJ Nernanich; T Sakai; N Sakuma; H Yoshida

  DIAMOND AND RELATED MATERIALS, Mar. 2003, Peer-reviewed

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• Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct current bias and field electron-emission properties

  K Kobashi; T Tachibana; Y Yokota; N Kawakami; K Hayashi; K Yamamoto; Y Koga; S Fujiwara; Y Gotoh; H Nakahara; H Tsuji; J Ishikawa; FA Kock; RJ Nemanich

  JOURNAL OF MATERIALS RESEARCH, Feb. 2003, Peer-reviewed

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• Development of in situ analyzer of electron emission properties: Fowler-Nordheim plotter and Seppen-Katamuki plotter

  Katsuyuki Ishizu; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2003, Peer-reviewed

  
• Negative-ion implantation into thin SiO2 film on Si and formation of silver nanoparticles in the film

  J Ishikawa; H Tsuji; M Motono; Y Gotoh; N Arai; K Adachi; H Kotaki

  IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2003, Peer-reviewed

  
• Nanoparticle formation in surface layer of oxide materials and improvement of photocatalytic properties of rutile titanium dioxide

  J Ishikawa; H Tsuji; H Sugahara; Y Gotoh

  APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2003, Peer-reviewed

  
• Metal negative-ion implantation into rutile TiO₂ and enhancement of photocatalytic property under irradiation of fluorescent light

  H Tsuji; H Sugahara; Y Gotoh; J Ishikawa

  IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2003, Peer-reviewed

  
• Development of ion beam assisted deposition system equipped with a low energy compact microwave ion source

  Takeshi Shibahara; Masayoshi Abiko; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2003, Peer-reviewed

  
• Optical absorption properties of Cu and Ag double negative-ion implanted silica glass

  H Tsuji; K Kurita; Y Gotoh; N Kishimoto; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Oct. 2002, Peer-reviewed

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• Ion beam assisted deposition of tantalum nitride thin films for vacuum microelectronics devices

  Y Gotoh; K Kagamimori; H Tsuji; J Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Sep. 2002, Peer-reviewed

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• Extracellular matrix absorption properties of negative ion-implanted polystyrene, polydimethylsiloxane and poly-lactic acid

  H Tsuji; H Sasaki; Y Utsumi; H Sato; Y Gotoh; J Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Sep. 2002, Peer-reviewed

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• Surface modification of TiO₂ (rutile) by metal negative ion implantation for improving catalytic properties

  H Tsuji; T Sagimori; K Kurita; Y Gotoh; J Ishikawa

  SURFACE & COATINGS TECHNOLOGY, Sep. 2002, Peer-reviewed

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• Relationship between composition and work function of gold-samarium alloy thin films

  N Kiwa; Y Gotoh; H Tsuji; J Ishikawa

  VACUUM, Aug. 2002, Peer-reviewed

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• Neuron attachment properties of carbon negative-ion implanted bioabsorbable polymer of poly-lactic acid

  H Tsuji; H Sasaki; H Sato; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2002, Peer-reviewed

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• Energy distribution of the compact microwave ion source for extremely low voltage ion extraction

  Y Gotoh; K Nakajima; T Hagiwara; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2002, Peer-reviewed

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• Orientation control of niobium nitride thin films by ion beam assisted deposition

  Y. Gotoh; H. Kitai; H. Tsuji; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2002, Peer-reviewed

  
• Magnetron sputter deposition of transition metal carbide thin films and their evaluation as a cold cathode

  Y. Gotoh; N. Kiwa; H. Tsuji; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2002, Peer-reviewed

  
• Nerve cell attachment property of absorbable poly-lactic-acid modified by carbon negative-ion implantation

  Masayoshi Izukawa; Hiroshi Tsuji; Hiroko Sato; Hitoshi Sasaki; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2002, Peer-reviewed

  
• Control of optical absorption band due to Cu/Ag nanoparticles in SiO₂ glass by dual ion implantation of Cu^- and Ag^-

  Hiroshi Tsuji; Ken'ichi Kurita; Masanori Motono; Hiromitsu Sugahara; Yasuhito Gotoh; Naoki Kishimoto; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2002, Peer-reviewed

  
• Improvement of photocatalytic efficiencies of rutile TiO₂ by metal negative ion implantation

  Hiroshi Tsuji; Hiromitsu Sugahara; Tomohiko Sagimori; Masanori Motono; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2002, Peer-reviewed

  
• Evaluation of hafnium and tantalum nitride thin films prepared by magnetron sputter deposition with a nitride target

  Yasuhito Gotoh; Nobumasa Kiwa; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2002, Peer-reviewed

  
• On the increase of the intensity ratio of doubly charged ions to singly charged ions for liquid gold and copper ion sources

  Y Gotoh; H Tsuji; J Ishikawa

  ULTRAMICROSCOPY, Oct. 2001, Peer-reviewed

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• Relationships among the physical parameters required to give a linear relation between slope and intercept of Fowler-Nordheim plots

  Y Gotoh; H Tsuji; J Ishikawa

  ULTRAMICROSCOPY, Oct. 2001, Peer-reviewed

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• Fabrication of gated niobium nitride field emitter array

  Y Gotoh; Y Kashiwagi; M Nagao; T Kondo; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2001, Peer-reviewed

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• Relationship between work function and current fluctuation of field emitters: Use of SK chart dor evaluation of work function

  Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, May 2001, Peer-reviewed

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• Emission characteristics of Spindt-type platinum field emitters improved by operation in carbon monoxide ambient

  Y Gotoh; D Nozaki; H Tsuji; J Ishikawa; T Nakatani; T Sakashita; K Betsui

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, May 2001, Peer-reviewed

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• A negative ion beam application for improving biocompatibility of polystyrene surface

  J Ishikawa; H Tsuji; H Sato; H Sasaki; Y Gotoh

  APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2001, Peer-reviewed

  
• Modification of polystyrene surface for neuron cell attachment properties by negative ion implantation and pattern treatment

  H. Tsuji; H. Sato; H. Sasaki; Y. Gotoh; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2001, Peer-reviewed

  
• Observation of negative-ion-implanted polystyrene by atomic force microscope for improvement of neural attachment properties

  H. Sasaki; H. Tsuji; H. Sato; Y. Gotoh; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2001, Peer-reviewed

  
• Optical absorption properties of copper-negative-ion implanted titanium dioxide and formation of copper nanoparticles

  H. Tsuji; T. Sagimori; K. Kurita; Y. Gotoh; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2001, Peer-reviewed

  
• Significant improvement of the emission property of Spindt-type platinum field emitters by operation in carbon monoxide ambient

  Y Gotoh; D Nozaki; H Tsuji; J Ishikawa; T Nakatani; T Sakashita; K Betsui

  APPLIED PHYSICS LETTERS, Jul. 2000, Peer-reviewed

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• Neuron cell positioning on polystyrene in culture by silver-negative ion implantation and region control of neural outgrowth

  H Tsuji; H Sato; T Baba; S Ikemura; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2000, Peer-reviewed

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• Estimation of emission field and emission site of boron-doped diamond thin-film field emitters

  Y Gotoh; T Kondo; M Nagao; H Tsuji; J Ishikawa; K Hayashi; K Kobashi

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 2000, Peer-reviewed

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• Compact microwave ion source for extremely low energy ion irradiation system

  Y Gotoh; H Kubo; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2000, Peer-reviewed

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• Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices

  Y Gotoh; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2000, Peer-reviewed

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• Negative-ion implanter for powders and its application to nanometer-sized metal particle formation in the surface of glass beads

  H Tsuji; S Kido; H Sasaki; Y Gotoh; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2000, Peer-reviewed

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• A negative ion beam application to artificial formation of neuron network in culture

  H Tsuji; H Sato; T Baba; Y Gotoh; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2000, Peer-reviewed

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• Molecular ion implanter equipped with liquid-metal alloy ion source

  Y Gotoh; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2000, Peer-reviewed

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• Criterion for decrease of electric field at ionization point of liquid-metal ion sources

  Y Gotoh; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 2000, Peer-reviewed

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• Fabrication of gated niobium nitride field emitter array

  Y. Gotoh; Y. Kashiwagi; M. Nagao; H. Tsuji; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2000, Peer-reviewed

  
• Extended Huckel molecular orbital calculation of electron density of graphite surface with atomic displacement

  Tetsuya Hagiwara; Hiroshi Kubo; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 2000, Peer-reviewed

  
• Self-aligned formation of a vertical-type micro field emitter with a volcano-shaped gate electrode protruding towards the cathode by focused ion-beam sputter etching and deposition

  Y Gotoh; N Fujita; H Tsuji; J Ishikawa; S Nagamachi; M Ueda

  JOURNAL OF MICROMECHANICS AND MICROENGINEERING, Dec. 1999, Peer-reviewed

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• Theoretical approach to liquid-metal field-emission electron sources

  Y Gotoh; H Tsuji; J Ishikawa

  APPLIED SURFACE SCIENCE, May 1999, Peer-reviewed

  
• Dependence of emission characteristics of Spindt-type field emitters on cathode material

  M Nagao; K Utsumi; Y Gotoh; H Tsuji; J Ishikawa; T Nakatani; T Sakashita; K Betsui

  APPLIED SURFACE SCIENCE, May 1999, Peer-reviewed

  
• Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited films

  H Tsuji; S Nakamura; Y Gotoh; J Ishikawa

  THIN SOLID FILMS, Apr. 1999, Peer-reviewed

  
• Emission characteristics of Spindt-type field emitter arrays in oxygen ambient

  Y Gotoh; K Utsumi; M Nagao; H Tsuji; J Ishikawa; T Nakatani; T Sakashita; K Betsui

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 1999, Peer-reviewed

  
• Ion energy dependence of N/C ratio in low energy CN molecular negative-ion beam deposited films

  T. Yoshihara; H. Tsuji; Y. Gotoh; J. Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1999, Peer-reviewed

  
• Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition

  Y. Gotoh; T. Shiigi; M. Nagao; H. Tsuji; J. Ishikawa

  Proceedings of the International Conference on Ion Implantation Technology, 1999, Peer-reviewed

  
• Negative-ion implanter for powders and uniform implantation without particle scattering

  Hiroshi Tsuji; Masakazu Mimura; Shunsuke Kido; Yasuhito Gotoh; Junzo Ishikawa

  Proceedings of the International Conference on Ion Implantation Technology, 1999, Peer-reviewed

  
• Comparison of silicon etching properties between F^- negative ion and SF₃⁺ positive ion-beam etchings

  Junzo Ishikawa; Hiroshi Tsuji; Kazuma Shibutani; Hiroshi Ikai; Yasuhito Gotoh

  Proceedings of the International Conference on Ion Implantation Technology, 1999, Peer-reviewed

  
• Negative-ion beam surface modification of tissue-culture polystyrene dishes for changing hydrophilic and cell-attachment properties

  H Tsuji; H Satoh; S Ikeda; S Ikemura; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jan. 1999, Peer-reviewed

  
• CN molecular negative-ion beam deposition and ion energy dependence of atomic bonds between carbon and nitrogen in the films

  H Tsuji; T Yoshihara; S Nakamura; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jan. 1999, Peer-reviewed

  
• Modification of cell attachment properties of tissue-culture polystyrene surface by silver-negative-ion implantation

  Hiroshi Tsuji; Shinichi Ikemura; Hiroko Sato; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1999, Peer-reviewed

  
• Ion energy dependence of inter-atomic bonding state of carbon films deposited by low-energy carbon-negative ion beam

  Hiroshi Tsuji; Syuichi Nakamura; Takaaki Yoshihara; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1999, Peer-reviewed

  
• Evaluation of uniformity and depth profiles in negative-ion implantation into spherical powders

  Shunsuke Kido; Masakazu Mimura; Hiroshi Tsuji; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1999, Peer-reviewed

  
• Electron emission characteristics of niobium nitride field emitters prepared by ion beam assisted deposition

  Yasuhito Gotoh; Masayoshi Nagao; Toshiyuki Ura; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1999, Peer-reviewed

  
• Properties of niobium nitride thin films as a candidate for cathode material of vacuum microelectronics devices

  Yasuhito Gotoh; Toshiyuki Ura; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1999, Peer-reviewed

  
• Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices

  Y Gotoh; M Nagao; T Ura; H Tsuji; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Jan. 1999, Peer-reviewed

  
• Monte Carlo simulation of emission efficiency of cone-shaped metal-insulator-semiconductor cathode

  K Inoue; Y Gotoh; Y Fujimori; M Nagao; S Sadakane; H Tsuji; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Oct. 1998, Peer-reviewed

  
• Rate of decrease in the intensity ratio of doubly charged ions to singly charged ions in liquid-metal ion source with gold-based alloy

  Y Gotoh; H Tsuji; J Ishikawa

  ULTRAMICROSCOPY, Jun. 1998, Peer-reviewed

  
• Surface modification by silver-negative-ion implantation for controlling cell-adhesion properties of polystyrene

  H Tsuji; H Satoh; S Ikeda; N Ikemoto; Y Gotoh; J Ishikawa

  SURFACE & COATINGS TECHNOLOGY, May 1998, Peer-reviewed

  
• Secondary electron emission and surface potential of SiO₂ film surface by negative ion bombardment

  H Tsuji; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 1998, Peer-reviewed

  
• Contact angle lowering of polystyrene surface by silver-negative-ion implantation for improving biocompatibility and introduced atomic bond evaluation by XPS

  H Tsuji; H Satoh; S Ikeda; Y Gotoh; J Ishikawa

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 1998, Peer-reviewed

  
• Non-scattering technique of ion-implantation into vibrated micro-powders by using a negative-ion beam

  J Ishikawa; H Tsuji; M Mimura; S Ikemura; Y Gotoh

  SURFACE & COATINGS TECHNOLOGY, May 1998, Peer-reviewed

  
• Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation

  J Ishikawa; Y Gotoh; S Sadakane; K Inoue; M Nagao; H Tsuji

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 1998, Peer-reviewed

  
• Fabrication of GaN field emitter arrays by selective area growth technique

  T Kozawa; M Suzuki; Y Taga; Y Gotoh; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 1998, Peer-reviewed

  
• Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique

  M Nagao; Y Fujimori; Y Gotoh; H Tsuji; J Ishikawa

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 1998, Peer-reviewed

  
• Development of compact microwave ion source for low-energy application

  Y Gotoh; Y Fujimori; H Kubo; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 1998, Peer-reviewed

  
• Extraction of molecular negative-ion beams of CN from radio frequency plasma-sputter-type heavy negative ion source for negative-ion beam deposition

  Tsuji, H; Ishikawa, J; Tomita, T; Yoshihara, T; Gotoh, Y

  REVIEW OF SCIENTIFIC INSTRUMENTS, Feb. 1998, Peer-reviewed

  
• Surface charging of insulated materials by negative ion beam bombardment

  J Ishikawa; H Tsuji; Y Gotoh

  PRODUCTION AND NEUTRALIZATION OF NEGATIVE IONS AND BEAMS / PRODUCTION AND APPLICATION OF LIGHT NEGATIVE IONS, 1998, Peer-reviewed

  
• Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films

  M Nagao; T Kondo; Y Gotoh; H Tsuji; J Ishikawa; K Miyata; K Kobashi

  APPLIED PHYSICS LETTERS, Nov. 1997, Peer-reviewed

  
• Stability of field emission current from boron-doped diamond thin films terminated with hydrogen and oxygen

  M Nagao; T Kondo; Y Gotoh; H Tsuji; J Ishikawa; K Miyata; K Kobashi

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Sep. 1997, Peer-reviewed

  
• Empirical relation between electric field at the ionization point and emission current of liquid copper, gold, germanium, and tin ion sources

  Y Gotoh; T Kashiwagi; H Tsuji; J Ishikawa

  APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, May 1997, Peer-reviewed

  
• Study on emission yields of negative- and positive-ion induced secondary electron from thin SiO₂ film

  J Ishikawa; H Tsuji; S Ikeda; Y Gotoh

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 1997, Peer-reviewed

  
• Slightly negative surface potential and charging model of insulator in the negative-ion implantation

  H Tsuji; J Ishikawa; S Ikeda; Y Gotoh

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 1997, Peer-reviewed

  
• Evaluation of zirconium nitride thin films prepared by ion beam assisted deposition as a candidate for cathode material of vacuum microelectronics devices

  Yasuhito Gotoh; Yoshikazu Fujimori; Takashi Shiigi; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1997, Peer-reviewed

  
• Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source

  H Tsuji; J Ishikawa; T Tomita; Y Gotoh

  ION IMPLANTATION TECHNOLOGY - 96, 1997, Peer-reviewed

  
• Molecular ion implantation technique for obtaining the same depth profile for the component atoms

  J Ishikawa; H Tsuji; M Mimura; Y Gotoh

  ION IMPLANTATION TECHNOLOGY - 96, 1997, Peer-reviewed

  
• Particle-scattering phenomenon of powders caused by charging voltage of the surface during ion implantation

  J Ishikawa; H Tsuji; Y Gotoh

  ION IMPLANTATION TECHNOLOGY - 96, 1997, Peer-reviewed

  
• CN molecular negative-ion extraction properties from RF plasma-sputter-type heavy negative-ion source and CN negative-ion beam deposition

  Hiroshi Tsuji; Tetsuo Tomita; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1997, Peer-reviewed

  
• Noise power analysis of the stability of micro-field emitters

  Masayoshi Nagao; Yasuhito Gotoh; Hiroshi Tuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1997, Peer-reviewed

  
• Structures and properties of copper thin films prepared by ion beam assisted deposition

  Y Gotoh; H Yoshii; T Amioka; K Kameyama; H Tsuji; J Ishikawa

  THIN SOLID FILMS, Nov. 1996, Peer-reviewed

  
• Relationship between effective work functions and noise powers of emission currents in nickel-deposited field emitters

  Y Gotoh; M Nagao; M Matsubara; K Inoue; H Tsuji; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Oct. 1996, Peer-reviewed

  
• Influences of ambient gases on the emission characteristics of Nickel-deposited field emitters for vacuum microelectronics

  M Nagao; M Matsubara; K Inoue; Y Gotoh; H Tsuji; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Oct. 1996, Peer-reviewed

  
• Yield measurement of secondary electrons emitted from silicon dioxide film in negative-ion bombardment

  Y Toyota; H Tsuji; Y Gotoh; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Sep. 1996, Peer-reviewed

  
• Development of ion irradiation system for in situ observation of ion irradiated semiconductor surfaces by ultra high vacuum scanning tunneling microscope

  J Ishikawa; H Tsuji; K Kameyama; S Shimada; Y Gotoh

  APPLIED SURFACE SCIENCE, Jul. 1996, Peer-reviewed

  
• Charging phenomenon of insulators in negative-ion implantation

  Y Toyota; H Tsuji; S Nagumo; Y Gotoh; J Ishikawa

  APPLIED SURFACE SCIENCE, Jul. 1996, Peer-reviewed

  
• Fundamental study on powder-scattering in positive- and negative-ion implantation into powder materials

  H Tsuji; J Ishikawa; H Itoh; Y Toyota; Y Gotoh

  APPLIED SURFACE SCIENCE, Jul. 1996, Peer-reviewed

  
• Liquid gold-antimony ion sources

  Y Gotoh; H Tsuji; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jun. 1996, Peer-reviewed

  
• Metal ion beam self-sputter deposition system

  Y Gotoh; T Amioka; H Tsuji; J Ishikawa

  REVIEW OF SCIENTIFIC INSTRUMENTS, May 1996, Peer-reviewed

  
• Cone-shaped metal-insulator-semiconductor cathode for vacuum microelectronics

  J Ishikawa; K Inoue; S Sadakane; Y Gotoh; H Tsuji

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, May 1996, Peer-reviewed

  
• Negative-ion extraction of gaseous materials from a radio frequency plasma-sputter-type heavy negative-ion source

  Tsuji, H; Ishikawa, J; Tomita, T; Gotoh, Y

  REVIEW OF SCIENTIFIC INSTRUMENTS, Mar. 1996, Peer-reviewed

  
• Study on the energy distribution of ion beams extracted from the sputter-type negative-ion source

  J Ishikawa; H Tsuji; T Takatori; Y Gotoh

  PRODUCTION AND NEUTRALIZATION OF NEGATIVE IONS AND BEAMS / PRODUCTION AND APPLICATION OF LIGHT NEGATIVE IONS, 1996, Peer-reviewed

  
• Self-aligned fabrication of extractor for cone-shaped metal-insulator-semiconductor electron tunneling cathodes

  K Inoue; S Sadakane; Y Gotoh; H Tsuji; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Dec. 1995, Peer-reviewed

  
• Energy distribution and yield measurement of secondary electrons to evaluate the equilibrium charging voltage of an isolated electrode during negative-ion implantation

  Y Toyota; H Tsuji; Y Gotoh; J Ishikawa

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Dec. 1995, Peer-reviewed

  
• 負イオン注入における絶縁物からの放出二次電子の測定

  豊田啓孝; 本田広史; 辻博司; 後藤康仁; 石川順三

  真空, Sep. 1995, Peer-reviewed

  
• Negative-Ion Production of Gas Material in RF-Plasma Sputter-Type Heavy Negative-Ion Source

  TSUJI Hiroshi; OKAYAMA Yoshio; TOYOTA Yoshitaka; GOTOH Yasuhito; ISHIKAWA Junzo

  Journal of the Vacuum Society of Japan, Mar. 1995, Peer-reviewed

  
• Development of compact microwave ion source for the purpose of direct extraction of low energy ion beam

  Yoshikazu Fujimori; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, Mar. 1995, Peer-reviewed

  
• FABRICATION OF LATERAL-TYPE THIN-FILM EDGE FIELD EMITTERS BY FOCUSED ION-BEAM TECHNIQUE

  Y GOTOH; T OHTAKE; N FUJITA; K INOUE; H TSUJI; J ISHIKAWA

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 1995, Peer-reviewed

  
• APPLICATION OF THE FOCUSED ION-BEAM TECHNIQUE TO THE DIRECT FABRICATION OF VERTICAL-TYPE FIELD EMITTERS

  J ISHIKAWA; T OHTAKE; Y GOTOH; H TSUJI; N FUKAYAMA; K INOUE; S NAGAMACHI; Y YAMAKAGE; M UEDA; H MARUNO; M ASARI

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Mar. 1995, Peer-reviewed

  
• THE CHARGING MECHANISM OF INSULATED ELECTRODE IN NEGATIVE-ION IMPLANTATION

  S SAKAI; Y GOTOH; H TSUJI; Y TOYOTA; J ISHIKAWA; M TANJYO; K MATSUDA

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Mar. 1995, Peer-reviewed

  
• NEGATIVE-ION IMPLANTATION TECHNIQUE

  J ISHIKAWA; H TSUJI; Y TOYOTA; Y GOTOH; K MATSUDA; M TANJYO; S SAKAI

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Mar. 1995, Peer-reviewed

  
• Evaluation of Charging Model in Negative-Ion Implantation

  Yoshitaka Toyota; Hiroshi Tsuji; Shoji Nagumo; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa; Koji Matsuda

  Shinku/Journal of the Vacuum Society of Japan, 1995, Peer-reviewed

  
• Charging Simulation of Micro-structured Pattern in Ion Implantation

  Shigeki Sakai; Hiroshi Tsuji; Yasuhito Gotoh; Yoshitaka Toyota; Junzo Ishikawa; Masayasu Tanjyo; Koji Matsuda

  Shinku/Journal of the Vacuum Society of Japan, 1995, Peer-reviewed

  
• Charging Potential Measurement of Photoresist-Layer Surface during Negative-Ion Implantation from Ion-Induced Secondary Electron Energy Analysis

  Hiroshi Tsuji; Shoji Nagumo; Yoshitaka Toyota; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1995, Peer-reviewed

  
• FABRICATION OF CONE-SHAPED METAL-INSULATOR-SEMICONDUCTOR ELECTRON-TUNNELING CATHODE

  INOUE, K; GOTOH, Y; TSUJI, H; ISHIKAWA, J

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Dec. 1994, Peer-reviewed

  
• NEGATIVE-ION PRODUCTION PROBABILITY IN RF PLASMA SPUTTER-TYPE HEAVY NEGATIVE-ION SOURCE

  H TSUJI; J ISHIKAWA; Y KAWABATA; Y GOTOH

  REVIEW OF SCIENTIFIC INSTRUMENTS, May 1994, Peer-reviewed

  
• OPERATIONAL CHARACTERISTICS OF THE IMPREGNATED-ELECTRODE-TYPE LIQUID-METAL ION-SOURCE WITH MULTIPLE TIP AND RESERVOIRS

  Y GOTOH; K YOSHIDA; T KAWAI; N FUKAYAMA; Y OGATA; H TSUJI; J ISHIKAWA

  REVIEW OF SCIENTIFIC INSTRUMENTS, Apr. 1994, Peer-reviewed

  
• Negative-Ion Current Density Dependence of the Surface Potential of Insulated Electrode During Negative-Ion Implantation

  Hiroshi Tsuji; Shigeki Sakai; Yoshio Okayama; Yoshitaka Toyota; Yasuhito Gotoh; Kouji Matsuda; Masayasu Tanjyo; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1994, Peer-reviewed

  
• Surface Potential Measurement of the Insulator with Secondary Electron Caused by Negative Ion Implantation

  Hiroshi Tsuji; Yoshitaka Toyota; Syoji Nagumo; Yasuhito Gotoh; Junzo Ishikawa; Shigeki Sakai; Masayasu Taniyo; Kohji Matsuda

  Shinku/Journal of the Vacuum Society of Japan, 1994, Peer-reviewed

  
• MEASUREMENT OF HEAVY NEGATIVE-ION PRODUCTION PROBABILITIES BY SPUTTERING

  J ISHIKAWA; H TSUJI; Y GOTOH; S AZEGAMI

  PRODUCTION AND NEUTRALIZATION OF NEGATIVE IONS AND BEAMS, 1994, Peer-reviewed

  
• RF PLASMA SPUTTER-TYPE DC-MODE HEAVY NEGATIVE-ION SOURCE

  H TSUJI; J ISHIKAWA; Y GOTOH; Y OKADA

  PRODUCTION AND NEUTRALIZATION OF NEGATIVE IONS AND BEAMS, 1994, Peer-reviewed

  
• APPLICATION OF FOCUSED ION-BEAM TECHNIQUES TO THE FABRICATION OF LATERAL-TYPE THIN-FILM EDGE FIELD EMITTERS

  Y GOTOH; K INOUE; T OHTAKE; H UEDA; Y HISHIDA; H TSUJI; J ISHIKAWA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jan. 1994, Peer-reviewed

  
• 絶縁性基板への負イオン注入によるチャージアップの軽減

  酒井滋樹; 丹上正安; 河合禎; 松田耕自; 後藤康仁; 大西浩之; 辻博司; 石川順三

  真空, Nov. 1993, Peer-reviewed

  
• METAL-SHEET-BEAM FORMATION USING AN IMPREGNATED ELECTRODE-TYPE LIQUID-METAL ION-SOURCE WITH A LINEAR-ARRAY OF EMISSION POINTS

  Y GOTOH; J ISHIKAWA; H TSUJI; N FUKAYAMA; Y OGATA

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Apr. 1993, Peer-reviewed, Lead author

  
• RADIO-FREQUENCY PLASMA SPUTTER TYPE HEAVY NEGATIVE-ION SOURCE

  J ISHIKAWA; H TSUJI; Y OKADA; M SHINODA; Y GOTOH

  VACUUM, Mar. 1993, Peer-reviewed

  
• ESTIMATION OF METAL-DEPOSITED FIELD EMITTERS FOR THE MICRO-VACUUM TUBE

  J ISHIKAWA; H TSUJI; K INOUE; M NAGAO; T SASAKI; T KANEKO; Y GOTOH

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Mar. 1993, Peer-reviewed

  
• PROFILES OF ION-BEAMS EXTRACTED FROM IMPREGNATED-ELECTRODE-TYPE LIQUID-METAL ION-SOURCE WITH LINEAR-ARRAY EMISSION POINTS

  J ISHIKAWA; Y GOTOH; N FUKAYAMA; Y OGATA; K YOSHIDA; H TSUJI

  VACUUM, Mar. 1993, Peer-reviewed

  
• Measurement of Emission Characteristics of Metal-Deposited Field Emitter

  Masayoshi Nagao; Kazunori Inoue; Takahiro Sasaki; Takashi Kaneko; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Shinku/Journal of the Vacuum Society of Japan, 1993, Peer-reviewed

  
• INFLUENCE OF CATHODE MATERIAL ON EMISSION CHARACTERISTICS OF FIELD EMITTERS FOR MICROELECTRONICS DEVICES

  ISHIKAWA J; TSUJI H; GOTOH Y; SASAKI T; KANEKO T; NAGAO M; INOUE K

  Journal of Vacuum Science & Technology B, 1993, Peer-reviewed

  
• INTENSIFICATION OF AN IMPREGNATED-ELECTRODE-TYPE LIQUID-METAL ION-SOURCE BY MULTIPLYING THE NUMBER OF TIP-AND-RESERVOIRS

  Y GOTOH; N FUKAYAMA; H TSUJI; J ISHIKAWA

  REVIEW OF SCIENTIFIC INSTRUMENTS, Apr. 1992, Peer-reviewed

  
• MILLIAMPERE METAL-ION BEAM FORMATION USING MULTIPOINT EMISSION BY AN IMPREGNATED-ELECTRODE-TYPE LIQUID-METAL ION-SOURCE

  J ISHIKAWA; H TSUJI; Y GOTOH

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Apr. 1991, Peer-reviewed

  
• ROLE OF KINETIC-ENERGY OF SPUTTERED PARTICLES IN THIN-FILM FORMATION

  Y TAGA; Y GOTOH

  THIN SOLID FILMS, Dec. 1990, Peer-reviewed

  
• STRUCTURES AND PROPERTIES OF CHROMIUM THIN-FILMS PREPARED BY ANISOTROPIC-EMISSION-EFFECT SPUTTER DEPOSITION

  Y GOTOH; Y TAGA

  JOURNAL OF APPLIED PHYSICS, Jan. 1990, Peer-reviewed

  
• IMPREGNATED-ELECTRODE-TYPE LIQUID-METAL ION-SOURCE

  J ISHIKAWA; Y GOTOH; H TSUJI; T TAKAGI

  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Mar. 1987, Peer-reviewed

  

Misc.

• Irradiation effects of high energy proton beam to phenylalanine thin films

  Yasuhito Gotoh; Masahiro Nakakami; Toshio Seki; Jiro Matsuo

  The 23rd International Workshop on Inelastic Ion-Surface Collisions, Nov. 2018

  
• Analysis of amino acids on tungsten needle by static voltage atom probe

  Yasuhito Gotoh; Masahiro Nakakami; Yuki Haneji; Chikasa Nishimura; Tasuku Sone; Hiroshi Tsuji

  The 22nd International Conference on Secondary Ion Mass Spectrometry, Oct. 2018

  
• Appropriate proton energy in non-Rutherford backscattering spectrometry for analysis of nitrogen composition of transition metal nitirde thin films on silicon substrate

  Yasuhito Gotoh; Tomoaki Osumi

  26th International Conference on Ion Beam Analysis and 18th International Conference on Particle Induced X-ray Emission, Oct. 2023

  
• Electron emission characteristics of field emitter arrays coated with over-stoichiometric hafnium nitride

  Tomoaki Osumi; Ryosuke Hori; Masayoshi Nagao; Hiromasa Murata; Yasuhito Gotoh

  2023 IEEE 36th International Vacuum Nanoelectronics Conference, Jul. 2023

  
• Investigation on space charge limited current with small charge approximation

  Yasuhito Gotoh

  電子情報通信学会技術研究報告, ED, 電子デバイス (電子・イオンビーム応用), Dec. 2022

  
• Measurement of work function of hafnium nitride thin films prepared by DC and RF magnetron sputtering

  Tomoaki Osumi; Masayoshi Nagao; Yasuhito Gotoh

  電子情報通信学会技術研究報告, ED, 電子デバイス (電子・イオンビーム応用), Dec. 2022

  
• Sputtering Simulation of the film thickness distribution and membrane property distribution

  Kohei Kuroshima; Ichirou Ikeda; Shigeji Sugimoto; Masashi Iguchi; Yasuhito Gotoh

  The 22nd International Vacuum Congress IVC22, Sep. 2022

  
• Crystal orientation of hafnium nitride thin films prepared at different positions by rf magnetron sputtering

  Tomoaki Osumi; Yasuhito Gotoh

  The 22nd International Vacuum Congress IVC22, ISSP/SE, Sep. 2022

  
• Evaluation of the equation of space charge limited current density under small charge approximation

  Yasuhito Gotoh

  電子情報通信学会技術研究報告, ED, 電子デバイス (電子管と真空ナノエレクトロニクスおよびその評価技術), Dec. 2021

  
• Seppen-Katamuki Analysis of Vacuum Nanoelectronics Devices

  GOTOH Yasuhito; TSUJI Hiroshi; ISHIKAWA Junzo

  電気学会研究会資料. ED, 放電研究会, 08 Dec. 2005

  
• Evaluation of Work Function of Samariumu-Gold Thin Films

  KIWA Nobumasa; GOTOH Yasuhito; TSUJI Hiroshi; ISHIKAWA Junzo

  真空, 20 Mar. 2001

  
• Negative-Fluorine-Ion Etching Properties of Silicon Substrate and Silicon Oxides

  SHIBUTANI Kazuma; TSUJI Hiroshi; GOTOH Yasuhito; ISHIKAWA Junzo

  真空, Mar. 1999

  
• スパッタリングによる負重イオン生成とRFプラズマスパッタ型負重イオン源 (特集/負イオン利用技術の現状--負イオン発見100年を記念して)

  辻 博司; 石川 順三; 後藤 康仁

  Ionics, Jul. 1997

  
• 無帯電負イオン注入技術と負イオン注入装置 (特集/負イオン利用技術の現状--負イオン発見100年を記念して)

  石川 順三; 辻 博司; 後藤 康仁

  Ionics, Jul. 1997

  
• Ion beam assisted deposition of tantalum carbide thin films for cold cathode

  GOTOH Yasuhito; SHIBAHARA Takeshi; FUJII Ryoichi; TSUJI Hiroshi; ISHIKAWA Junzo

  IEICE technical report. Electron devices, 06 Dec. 2002

  
• Low temperature growth of transition metal nitride thin films as a candidate for the emitter material of vacuum microelectronics devices

  GOTOH Y.; NAGAO M.; TSUJI H.; ISHIKAWA J.

  IEICE technical report. Electron devices, 12 Dec. 1997

  
• Characterization of Field Emission Cathode with S-K Chart

  GOTOH Yasuhito; TSUJI Hiroshi; ISHIKAWA Junzo

  IEICE technical report, 15 Dec. 2005

  
• Development of Silicon Field Emitter Array as A Charge Neutralization Device for Ion Implantation System

  GOTOH Yasuhito; NAKAMURA Koji; KOJIMA Toshihiko; TSUJI Hiroshi; ISHIKAWA Junzo; IKEJIRI Tadashi; UMISEDO Sei; SAKAI Shigeki; NAGAI Nobuo; NAGAO Masayoshi; KANEMARU Seigo

  IEICE technical report. Electron devices, 16 Dec. 2004

  
• Preparation of thin films of transition metal nitrides and carbides by rf magnetron sputtering and their evaluation as a cold cathode

  GOTOH Yasuhito; KIWA Nobumasa; NAKAHARA Hironori; ABIKO Masayoshi; TSUJI Hiroshi; ISHIKAWA Junzo

  IEICE technical report. Electron devices, 14 Dec. 2001

  
• Monte Carlo Simulation of Ion Impact to the Apex of the Miniaturized Field Emitter

  GOTOH Y.; MATSUBARA M.; INOUE K.; TSUJI H.; ISHIKAWA J.

  IEICE technical report. Electron devices, 15 Dec. 1995

  
• 真空蒸着装置(イオンビームアシスト蒸着法)の作製と窒化ジルコニウム薄膜への応用(平成8年度第1回関西支部研究例会の講演要旨)

  後藤 康仁; 藤森 敬和; 椎木 崇; 辻 博司; 石川 順三

  真空, 20 Jul. 1996

  
• Development of the Ultra High Vacuum Scanning Tunneling Microscope for in situ Observation of Ion Irradiated Solid Surfaces

  ISHIKAWA Junzo; TSUJI Hiroshi; KAMEYAMA Koji; SHIMADA Shigeki; GOTOH Yasuhito

  真空, 20 Sep. 1995

  
• Negative-Fluorine-Ion Extraction from RF Plasma-Sputter-Type Heavy Negative-Ion Source using SF_6 Gas

  TSUJI Hiroshi; TOMITA Tetsuo; TOYOTA Yoshitaka; GOTOH Yasuhito; ISHIKAWA Junzo

  真空, 20 Sep. 1995

  
• ガンマ線照射下におけるFEAの特性測定装置とそれを用いた電子放出特性の評価

  後藤康仁; 森藤瑛之; 半田裕典; 長尾昌善; 佐藤信浩; 秋吉優史; 高木郁二; 岡本 保

  電子情報通信学会技術研究報告. ED, 電子デバイス (電子管と真空ナノエレクトロニクス及びその評価技術), 21 Nov. 2019

  
• Evaluation of Gamma-ray Induced Current Generated on Cables Transferring Sensor Output under Radiation Fields

  後藤康仁; 奥野泰希; 佐藤信浩; 秋吉優史; 今泉充; 小林知洋; 岡本保

  電子情報通信学会技術研究報告, 21 Nov. 2019

  
• 微小電子源を用いた真空集積回路創成のための技術的課題

  後藤康仁

  電子情報通信学会技術研究報告. ED, 電子デバイス (電子管と真空ナノエレクトロニクス及びその評価技術), 21 Nov. 2019

  
• Effects of bombardment of argon ions backscattered at target surface in magnetron sputter deposition

  Yasuhito Gotoh; Shotaro Yano

  Proceedings of the 15th International Symposium on Sputtering and Plasma Processes, Jun. 2019

  
• Radiation tolerant vacuum image sensor for robots working on removal of fuel debris

  Yasuhito Gotoh; Teryuki Morito; Masayoshi Nagao; Tamotsu Okamoto; Tomoya Igari; Takahiro Fukui; Tomoaki Masuzawa; Yoichiro Neo; Hidenori Mimura; Nobuhiro Sato; Masafumi Akiyoshi; Ikuji Takagi

  International Topical Workshop on Fukushima Daiichi Decommissioning Research, May 2019

  
• Recent progress in development of radiation tolerant image sensor with field emitter array

  Tomoaki Masuzawa; Yoichiro Neo; Hidenori Mimura; Masayoshi Nagao; Masafumi Akiyoshi; Ikuji Takagi; Yasuhito Gotoh; Tamotsu Okamoto; Tomoya Igari; Nobuhiro Sato

  2018 31st International Vacuum Nanoelectronics Conference, 2018, Invited

  
• Operation of field emitter arrays under high dose rate gamma-ray irradiation

  Teruyuki Morito; Yusuke Handa; Yasuhito Gotoh; Nobuhiro Sato; Masayoshi Nagao; Masafumi Akiyoshi; Ikuji Takagi; Tamotsu Okamoto

  2018 31st International Vacuum Nanoelectronics Conference, 2018

  
• Fabrication of volcano structured Spindt-type field emitter arrays using Minimal Fab system

  Masayoshi Nagao; Katsuhisa Murakami; Sommwan Khumpuang; Shiro Hara; Yasuhito Gotoh; Yoichiro Neo; Hidenori Mimura

  2018 31st International Vacuum Nanoelectronics Conference, 2018

  
• Gamma-ray irradiation effects of CdS/CdTe photodiode for radiation tolerant FEA image sensor

  Tamotsu Okamoto; Tomoya Igari; Takahiro Fukui; Yasuhito Gotoh; Nobuhiro Sato; Masafumi Akiyoshi; Ikuji Takagi

  2018 31st International Vacuum Nanoelectronics Conference, 2018

  
• 高線量率のX線照射下におけるフィールドエミッタアレイの動作

  森藤瑛之; 辻 博司; 長尾昌善; 秋吉優史; 高木郁二; 後藤康仁

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 28 Oct. 2017

  
• ファウラーノルドハイムプロットの非直線性が切片傾き解析に与える影響

  後藤康仁

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 28 Oct. 2017

  
• Large magnification of electrostatic divergent lens system with extremely short focal length for ion and electron microscopy

  Yasuhito Gotoh; Saba Maeda; Hiroshi Tsuji

  2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017, 26 Sep. 2017

  
• Effect of oblique incidence of sputtered and fast particles on crystal orientation in tungsten thin film formation

  Yasuhito Gotoh; Hirofumi Fujiwara; Hiroshi Tsuji

  Proceedings of the 14th International Symposium on Sputtering and Plasma Processes, Jul. 2017

  
• Robustness of Field Emitter Arrays against High-Energy X-ray Irradiation at High Dose Rate

  Gotoh Yasuhito; Morito Teruyuki; Tsuji Hiroshi; Akiyoshi Masafumi; Nagao Masayoshi; Takagi Ikuji

  2017 30th International Vacuum Nanoelectronics Conference (Ivnc), 2017

  
• Process technology for volcano-structured double-gate Spindt-type field emitter arrays

  Nagao Masayoshi; Murakami Katsuhisa; Gotoh Yasuhito; Neo Yoichiro; Mimura Hidenori

  2017 30th International Vacuum Nanoelectronics Conference (Ivnc), 2017

  
• エックス線照射下におけるフィールドエミッタアレイの動作特性とその解析

  後藤康仁; 辻 博司; 長尾昌善; 秋吉優史; 高木郁二

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 27 Oct. 2016

  
• Radiation tolerance of CdTe/CdS photoconductive target

  増澤智昭; 根尾陽一郎; 後藤康仁; 岡本 保; 長尾昌善; 佐藤信浩; 秋吉優史; 高木郁二; 三村秀典

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 25 Oct. 2016

  
• Fabrication of Vacuum nanoelectronics devices using minimal fab system

  長尾昌善; 村上勝久; 辰巳憲之; クンプアン ソマワン; 原 史朗; 後藤康仁

  電子情報通信学会技術研究報告. ED, 電子デバイス (電子管と真空ナノエレクトロニクス及びその評価技術), 25 Oct. 2016

  
• Potential dangers and safety measures of vacuum technologies

  Yasuhito Gotoh

  Journal of the Vacuum Society of Japan, Jul. 2016

  
• Field emitter array with electrostatic focusing electrode for radiation tolerant compact image sensor

  Y. Gotoh; M. Nagao; T. Masuzawa; Y. Neo; H. Mimura; T. Okamoto; M. Akiyoshi; N. Sato; I. Takagi

  11th International Vacuum Electron Sources Conference, 2016, Invited

  
• Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

  Masuzawa Tomoaki; Neo Yoichiro; Mimura Hidenori; Okamoto Tamotsu; Nagao Masayoshi; Akiyoshi Masafumi; Sato Nobuhiro; Takagi Ikuji; Tsuji Hiroshi; Gotoh Yasuhito

  Radiation Detectors: Systems and Applications XVII, 2016

  
• Radiation tolerance of compact image sensor with field emitter array and cadmium telluride-based photoconductor

  Gotoh Yasuhito; Tsuji Hiroshi; Nagao Masayoshi; Masuzawa Tomoaki; Neo Yoichiro; Mimura Hidenori; Okamoto Tamotsu; Akiyoshi Masafumi; Sato Nobuhiro; Takagi Ikuji; IEEE

  2016 29th International Vacuum Nanoelectronics Conference (Ivnc), 2016

  
• Evaluation of current density distribution of field emitted electrons by numerical simulation in conjunction with analytical approach

  Gotoh Yasuhito; Tsuji Hiroshi; Nagao Masayoshi; IEEE

  2016 29th International Vacuum Nanoelectronics Conference (Ivnc), 2016

  
• Development of CdTe based photoconductive target for radiation tolerant compact image sensors

  Masuzawa Tomoaki; Neo Yoichiro; Mimura Hidenori; Okamoto Tamotsu; Nagao Masayoshi; Gotoh Yasuhito; Akiyoshi Masafumi; Sato Nobuhiro; Takagi Ikuji; IEEE

  2016 29th International Vacuum Nanoelectronics Conference (Ivnc), 2016

  
• ダブルゲートスピント型エミッタの電極構造と電子ビーム軌道

  後藤康仁; 辻 博司; 長尾昌善

  電子情報通信学会技術研究報告. ED, 電子デバイス (電子管と真空ナノエレクトロニクス及びその評価技術), 22 Oct. 2015

  
• Effect of substrate position on crystal orientation of tungsten films prepared by rf magnetron sputter deposition

  H. Fujiwara; H. Tsuji; Y. Gotoh

  Proceedings of the 13th International Symposium on Sputtering and Plasma Processes, Jul. 2015

  
• Work function of hafnium nitirde thin films prepared by radio frequency magnetron sputtering

  Yasuhito Gotoh; Sho Fujiwara; Hiroshi Tsuji

  Proceedings of the 13th International Symposium on Sputtering and Plasma Processes, Jul. 2015

  
• Effect of electrode geometry on focusing property of volcano-structured double-gate Spindt-type FEAs

  Yasuhito Gotoh; Hiroshi Tsuji; Masayoshi Nagao

  IDW '15: The 22nd International Display Workshops, 2015

  
• Revised fabrication of volcano-structured double-gate Spindt-type FEA

  Masayoshi Nagao; Yasuhito Gotoh; Tomoaki Masuzawa; Yoichiro Neo; Hidenori Mimura

  IDW '15: The 22nd International Display Workshops, 2015

  
• Deposition of glycine molecules on tungsten emitter and observation of its surface with field ion microscope

  Noriaki Nyuba; Makoto Okada; Hiroshi Tsuji; Yasuhito Gotoh

  IDW '15: The 22nd International Display Workshops, 2015

  
• Research Project on Development of Radiation Tolerant Compact Image Sensor with a Field Emitter Array

  Gotoh Yasuhito; Masuzawa Tomoaki; Neo Yoichiro; Mimura Hidenori; Nagao Masayoshi; Okamoto Tamotsu; Akiyoshi Masafumi; Takagi Ikuji; IEEE

  2015 28th International Vacuum Nanoelectronics Conference (Ivnc), 2015

  
• Beam profile measurement of volcano-structured double-gated Spindt-type filed emitter arrays

  Nagao Masayoshi; Gotoh Yasuhito; Neo Yoichiro; Mimura Hidenori; IEEE

  2015 28th International Vacuum Nanoelectronics Conference (Ivnc), 2015

  
• A Consideration on Field Calculation near Emitter Surface of Field Emitters

  GOTOH Yasuhito; TSUJI Hiroshi

  IEICE technical report. Electron devices, 21 Oct. 2014

  
• Computer Simulation of Electron Beam Trajectories in Double-Gated Spindt-Type FEAs

  Y. Gotoh; H. Tsuji; M. Nagao

  IDW '14: The 21st International Display Workshops, 2014

  
• Operational Characteristics of Vacuum Triode with Hafnium Nitride Field Emitter Arrays in Harsh Environments

  Yasuhito Gotoh; Wataru Ohue; Yoshiki Yasutomo; Hiroshi Tsuji

  2014 27TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2014

  
• Evaluation of Radiation Tolerance of Silicon Dioxide Layer for Field Emitter Arrays

  Gotoh Yasuhito; Tsui Hiroshi; Yoshizawa Shunichi; Nagao Masayoshi; Akiyoshi Masafumi; Takgai Ikuji

  2014 27th International Vacuum Nanoelectronics Conference (Ivnc), 2014

  
• 低速電子ビーム形成のための電界放出電子源引き出し電極系の設計

  後藤康仁; 辻 博司

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 22 Oct. 2013

  
• Evaluation of Radiation Tolerance of Hafnium Nitride Field Emitter Arrays

  Y. Gotoh; Y. Yasutomo; H. Tsuji

  IDW '13: The 20th International Display Workshops, 2013

  
• Measurement of Work Function of Hafnium Nitride Films at Elevated Temperatures in Ultra High Vacuum

  S. Fujiwara; S. Hogyoku; H. Tsuji; Y. Gotoh

  IDW '13: The 20th International Display Workshops, 2013

  
• Space charge effect in electronic device with field emitter array

  GOTOH Yasuhito; YASUTOMO Yoshiki; TSUJI Hiroshi

  IEICE technical report. Electron devices, 12 Nov. 2012

  
• Observation of Cathodoluminescence of Germanium-Implanted Quartz Glass Excited by Low-Energy Electrons Emitted from Silicon Field Emitter Array

  Hiroshi Tsuji; Akira Sakata; Go Miyagawa; Yoshiki Yasutomo; Yasuhito Gotoh

  IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 3, 2012

  
• Production of Extremely Low Energy Electron Beam with Silicon-Based Field Emitter Arrays and Its Application to Space Charge Neutralization of Low-Energy and High-Current Ion Beam

  Yasuhito Gotoh; Shuhei Taguchi; Keita Ikeda; Takayuki Kitagawa; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2012, Invited

  
• Luminescence properties of Ge-implanted SiO 2 layer on Si substrate for blue-UV light source with low-voltage drive

  Nobutoshi Arai; Masatomi Harada; Hiroshi Kotaki; Akira Takahashi; Go Miyagawa; Shohei Kinoshita; Hiroshi Tsuji; Yasuhito Gotoh

  IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 2012

  
• Frequency mixing with a tetrode vacuum transistor

  Yoshiki Yasutomo; Wataru Ohue; Yasuhito Gotoh; Hiroshi Tsuji

  IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, 2012

  
• Rectification of Amplitude Modulated Signals with Vacuum Transistor

  GOTOH Yasuhito; IKEDA Keita; OHUE Wataru; YASUTOMO Yoshiki; TSUJI Hiroshi

  IEICE technical report. Electron devices, 13 Oct. 2011

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• Mixing characteristics with vacuum tetrode transistor

  YASUTOMO Yoshiki; OHUE Wataru; GOTOH Yasuhito; TSUJI Hiroshi

  IEICE technical report. Electron devices, 13 Oct. 2011

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• Hafnium nitride thin film cold cathode for field emitter arrays

  Yasuhito Gotoh; Hiroshi Tsuji

  International Meeting for Information Display, 2011, Invited

  
• Comparison of Field Emission Properties between Hafnium Nitride and Niobium Nitride Field Emitter Arrays

  Yasuhito Gotoh; Keita Ikeda; Hiroshi Tsuji

  IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2011

  
• Frequency Characteristics of Vacuum Transistor Using Hafnium Nitride Field Emitter Array

  IKEDA Keita; OHUE Wataru; GOTOH Yasuhito; TSUJI Hiroshi

  IEICE technical report, 18 Oct. 2010

  
• Relationship between collector geometry and collector characteristics of vacuum transistor

  GOTOH Yasuhito; IKEDA Keita; OHUE Wataru; TSUJI Hiroshi

  IEICE technical report, 18 Oct. 2010

  
• Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma

  GOTOH Yasuhito; ENDO Keisuke; TSUJI Hiroshi; ISHIKAWA Junzo; SAKAI Shigeki

  IEICE technical report, 18 Oct. 2010

  
• Observation of Field Emission Current Fluctuation with In Situ Analyzer of Field Emission Devices

  Yasuhito Gotoh; Michito Kawasaki; Hiroshi Tsuji

  IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010

  
• Performance of Hafnium Nitride Field Emitter Array in Tough Circumstance

  Wataru Ohue; Keita Ikeda; Keisuke Endo; Yasuhito Gotoh; Hiroshi Tsuji

  IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010

  
• P1-6: Compensation of divergence of space charge dominated ion beams using electron injection and confinement in non-uniform magnetic fields

  Dan Nicolaescu; Shigeki Sakai; Yasuhito Gotoh; Junzo Ishikawa

  23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 2010

  
• 10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries

  Yasuhito Gotoh; Yoshiki Sakai; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  23rd International Vacuum Nanoelectronics Conference, IVNC 2010, 2010

  
• Electron emission characteristics of field emitter array with hafnium nitride cathode

  GOTOH Yasuhito; IKEDA Keita; MIYATA Yuko; ENDO Keisuke; TSUJI Hiroshi

  IEICE technical report, 08 Oct. 2009

  
• Measurement of work function of hafnium nitride films prepared by RF magnetron sputtering

  K. Endo; Y. Miyata; K. Ikeda; Y. Gotoh; H. Tsuji; J. Ishikawa

  Proceedings of the 10th International Symposium on Sputtering and Plasma Processes, Jul. 2009

  
• Fabrication of silicon gate electrode of field emitter arrays by RF magnetron sputtering

  Y. Gotoh; A. Oowada; Y. Sakai; M. Takeuchi; M. Nagao; S. Sakai; H. Tsuji; T. Kimoto; J. Ishikawa

  Proceedings of the 10th International Symposium on Sputtering and Plasma Processes, Jul. 2009

  
• Analysis of field emission characteristics of field stabilized liquid cone

  Y. Gotoh

  IDW '09 - Proceedings of the 16th International Display Workshops, 2009

  
• Hafnium nitride field emitter array for field emission amplifier

  Keita Ikeda; Yuko Miyata; Keisuke Endo; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 2009

  
• Formation of low energy electron beam with silicon field emitter arrays for space charge compensation in low-energy ion-implantation system

  Shuhei Taguchi; Mitsuaki Takeuchi; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 2009

  
• Application of silicon field emitter arrays for space-charge compensation of low energy ion beam

  M. Takeuchi; S. Taguchi; Y. Gotoh; H. Tsuji; J. Ishikawa; S. Sakai

  Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 2009

  
• Development of in situ analyzer of field emission devices

  Michito Kawasaki; Zhen He; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa

  Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, 2009

  
• シリコン微小電子源のイオンビーム空間電荷中和への応用

  竹内光明; 後藤康仁; 辻 博司; 酒井滋樹; 木本恒暢; 石川順三

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 04 Aug. 2008

  
• 電界電子放出特性その場解析アナログ回路の改良

  後藤康仁; 河崎道人; 辻 博司; 石川順三

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 04 Aug. 2008

  
• Improvement of in situ analyzer of field emission properties

  Y. Gotoh; M. Kawasaki; H. Tsuji; J. Ishikawa

  IDW \\'08 - Proceedings of the 15th International Display Workshops, 2008

  
• Cathode and Photo Luminescence of Silicon Dioxide Layer Implanted with Ge Negative Ions at Multi-Energy

  N. Arai; H. Tsuji; K. Kojima; K. Adachi; H. Kotaki; T. Ishibashi; Y. Gotoh; J. Ishikawa

  PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008

  
• Properties of insulating layer of gated FEAs with transition metal nitride cathode

  Y. Gotoh; Y. Miyata; N. Setojima; H. Tsuji; J. Ishikawa

  IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007

  
• Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation

  A. Oowada; M. Takeuchi; Y. Sakai; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto

  2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007

  
• Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device

  M. Takeuchi; T. Kojima; A. Oowada; Y. Gotoh; M. Nagao; H. Tsuji; J. IShikawa; S. Sakai; T. Kimoto

  2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007

  
• Fabrication and field emission properties of gated field emitter arrays with hafnium nitride cathode

  Y. Gotoh; N. Setojima; Y. Miyata; T. Kanzawa; H. Tsuji; J. Ishikawa

  2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007

  
• Modeling of linear CNT nanotriodes with improved field uniformity

  D. Nicolaescu; V. Filip; Y. Gotoh; J. Ishikawa

  2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007

  
• Nanocrystal Formation of Metals in Thermally Grown Thin Silicon Dioxide Layer by Ion Implantation and Thermal Diffusion of Implanted Atoms in Heat Treatment

  N. Arai; H. Tsuji; N. Gotoh; T. Minotani; T. Ishibashi; K. Adachi; H. Kotaki; Y. Gotoh; J. Ishikawa

  PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, Peer-reviewed

  
• Germanium nanoparticles formed in silicon dioxide layer by multi-energy implantation and oxidation state of Ge atoms

  H. Tsuji; N. Arai; N. Gotoh; T. Minotani; K. Kojima; K. Adachi; H. Kotaki; T. Ishibashi; Y. Gotoh; J. Ishikawa

  PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, Peer-reviewed

  
• 窒化ハフニウムを陰極とした電界放出電子源の作製

  後藤康仁; 瀬戸島範幸; 神澤太郎; 小島俊彦; 藤井亮一; 辻 博司; 石川順三

  電子情報通信学会技術研究報告. ED, 電子デバイス(電子管と真空ナノエレクトロニクス及びその評価技術), 04 Aug. 2006

  
• Fabrication of field emission arrays with hafnium nitride cathode

  Y. Gotoh; N. Setojima; T. Kanzawa; H. Tsuji; J. Ishikawa

  IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2006

  
• Analytical modeling for the electron emission properties of carbon nanotube arrays

  D. Nicolaescu; V. Filip; G. H. Takaoka; Y. Gotoh; J. Ishikawa

  IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 2006

  
• Work function of low index crystal facet of tungsten evaluated by Seppen-Katamuki analysis

  Y. Gotoh; K. Mukai; Y. Kawamura; H. Tsuji; J. Ishikawa

  IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium, 2006

  
• Electron emission properties of plasma treated silicon field emission arrays in gaseous ambient

  Y. Gotoh; T. Kojima; A. Oowada; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai

  Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2006

  
• Discharge characteristics of helium under inhomogeneous pressure distribution

  Y. Gotoh; C. Ichihara; A. Kobayashi; T. Hirano; H. Tsuji; J. Ishikawa

  Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 2006

  
• Estimate of structural modification of laser irradiated carbon nanotubes by Seppen-Katamuki analysis

  Y. Kawamura; Y. Gotoh; T. Niiya; H. Tsuji; J. Ishikawa; A. Hosono; S. Okuda

  IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 2005

  
• Emission characteristics of silicon field emitter arrays as space charge and wafer charging neutralizer in ion implanter

  T. Kojima; K. Nakamura; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; T. Ikejiri; S. Sakai; S. Umisedo; N. Nagai

  Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference, 2005

  
• Seppen-Katamuki analysis of field emission properties of carbon nanotubes irradiated by different laser fluences

  Y. Gotoh; Y. Kawamura; T. Niiya; H. Tsuji; J. Ishikawa; A. Hosono; S. Okuda

  Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005

  
• Development of key technologies for carbon nanotube FEDs in Japanese national project

  Soichiro Okuda; Akihiko Hosono; Tetsuya Shiroishi; Kunihiko Nishimura; Shuhei Nakata; Mikio Takai; Junzo Ishikawa; Yasuhito Gotoh; Sashiro Uemura; Junko Yotani; Hiroyuki Kurachi; Nobuaki Hayashi; Makoto Okai; Tsunehiko Sugawara; Takahiro Murakami; Yuichi Kuroki

  Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, 2005

  
• Silver nanoparticles formation in thermal oxide on silicon by negative-ion implantation

  Nobutoshi Arai; Hiroshi Tsuji; Kouichirou Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

  IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai, 2004

  
• Seppen-Katamuki analysis of electron emission from chemical vapor deposited multiwall carbon nanotubes with and without laser irradiation

  Y Gotoh; Y Kawamura; K Ishizu; H Tsuji; J Ishikawa; S Nakata; S Okuda

  TECHNICAL DIGEST OF THE 17TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2004

  
• Electron emission properties of gated silicon field emitter arrays for charge neutralization device in ion implantation system

  Y Gotoh; K Nakamura; T Kojima; H Tsuji; J Ishikawa; T Ikejiri; S Umisedo; S Sakai; N Nagai

  TECHNICAL DIGEST OF THE 17TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2004

  
• Negative-ion implantation into polymers and its application to nerve regeneration guide tube

  J. Ishikawa; H. Tsuji; H. Satoh; Y. Gotoh

  Transactions - 7th World Biomaterials Congress, 2004

  
• Protein adsorption on carbon-negative ion (C-)-implanted polystyrene as neuronal guidance.

  H Sato; H Tsuji; M Izukawa; H Sasaki; Y Utsumi; Y Gotoh; J Ishikawa

  ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, Mar. 2003

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• Local work function of transition metal nitrides and carbides measured by kelvin probe force microscopy

  Kenta Miya; Masahiro Sasaki; Shigehiko Yamamoto; Yasuhito Gotoh; Junzo Ishikawa

  Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 2003

  
• Energy spread measurement of electrons from field emitter array for ion beam neutralization

  J Ishikawa; Y Gotoh; K Nakamura; H Tsuji; K Matsuda; N Nagai; S Sakai; T Ikejiri; S Umisedo; N Hamamoto

  TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, 2003

  
• Measurement of field emission characteristics from transition metal nitride and carbide thin films

  Y Gotoh; MY Liao; H Tsuji; J Ishikawa

  TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, 2003

  
• Field electron emission from amorphous AlN and Cr doped AlN films

  MY Liao; Y Gotoh; H Tsuji; J Ishikawa

  TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, 2003

  
• The Field Emitter Array for neutralization of positive ion charge in ion implantation system

  Ikejiri T; Sakai S; Umisedo S; Naito K; Nagai N; Nagao M; Kanemaru S; Ishikawa J; Gotoh Y; Tsuji H

  Technical Digest of the 16th International Vacuum Microelectronics Conference, 2003

  
• Characterization of enhanced field emission from HfC-coated Si emitter arrays through parameter extraction

  Nicolaescu D; Sato T; Nagao M; Filip V; Kanemaru S; Itoh J; Takai MM; Gotoh Y; Ishikawa J

  Technical Digest of the 16th International Vacuum Microelectronics Conference, 2003

  
• 銅及び銀負イオン二重注入石英ガラスにおける金属超微粒子による表面プラズモン共鳴光吸収特性の熱処理温度依存性

  辻 博司; 栗田賢一; 本野正徳; 菅原弘允; 後藤康仁; 岸本直樹; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, 19 Nov. 2001

  
• Negative- and positive-temperature dependences of electron emission properties of hydrogen- and oxygen-terminated diamond field emitters

  Y Gotoh; H Nakahara; T Kondo; H Tsuji; J Ishikawa

  IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE, 2001

  
• Metal Negative-Ion Implantation into Spherical Soda-lime Glass Beads and Optical Properties Influenced by Metal Surface Plasmon

  TSUJI Hiroshi; KIDO Shunsuke; GOTOH Yasuhito; ISHIKAWA Junzo

  真空, 20 Mar. 2000

  
• Surface Modification of Polystyrene for Nerve Cell Compatibility by Negative Ion Implantation

  TSUJI Hiroshi; SASAKI Hitoshi; SATO Hiroko; GOTOH Yasuhito; ISHIKAWA Junzo

  真空, 20 Mar. 2000

  
• ダイヤモンド薄膜からの電子放出特性とその解釈

  後藤康仁; 石川順三

  ニューダイヤモンド, 2000

  
• Negative-ion implanter and formation of metal nanoparticles in glass

  J Ishikawa; H Tsuji; S Kido; K Kurita; N Kishimoto; Y Gotoh

  2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000

  
• Ion implantation technique using negative ions for artificial neuron network on polystyrene in cell culture

  H Tsuji; H Sasaki; H Sato; Y Gotoh; J Ishikawa

  2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000

  
• Improvement of Neuron Attachment Properties of Polystyrene by Negative Ion Implantation and Induction of Neural Protrusion Outgrowth.

  辻 博司; 佐藤弘子; 池村慎一; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1998

  
• 液体金属イオン源における液体コーン先端の電界強度の放出電流依存性

  後藤康仁; 辻博司; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1998

  
• 振動球形粉体への銅負イオン注入における注入原子の深さ方向分布と粒子間の均一性の評価

  木戸俊介; 三村昌和; 辻 博司; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1998

  
• 銀負イオン注入によるポリスチレン上の細胞接着特性のパターニングと細胞配向性

  辻 博司; 佐藤弘子; 池村慎一; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1998

  
• Emission characteristics of Spindt-type field emitter arrays in oxygen ambient

  Y. Gotoh; K. Utsumi; M. Nagao; H. Tsuji; J. Ishikawa; T. Nakatani; T. Sakashita; K. Betsui

  Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 1998

  
• Influence of the composition of NbN_x thin film field emitter array on the emission characteristics

  M. Nagao; T. Ura; Y. Gotoh; H. Tsuji; J. Ishikawa

  Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 1998

  
• ボロンドープダイヤモンド薄膜からの電界電子放出特性

  近藤利行; 長尾昌善; 後藤康仁; 辻博司; 石川順三; 宮田浩一; 小橋宏司

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1997

  
• フッ素負イオンビームによるSi及びSiO₂エッチング

  渋谷和真; 富田哲生; 辻 博司; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1997

  
• 振動状態における粉体の飛散開始帯電電圧と正イオン及び負イオン注入実験

  辻 博司; 三村昌和; 池村慎一; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1997

  
• 銀負イオン注入によるポリスチレン表面の濡れ性と細胞接着特性の制御

  池村慎一; 辻 博司; 佐藤弘子; 池田茂雄; 池本伸郎; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1997

  
• Current Status of Negative Ion Application Techniques-for the 100th anniversary of discovery of negative ions. Negative-Ion Production by Sputtering and RF Plasma-Sputter-Type Heavy Negative-Ion Source.

  辻 博司; 石川順三; 後藤康仁

  Ionics, Jul. 1997

  
• Current Status of Negative Ion Application Techniques-for the 100th anniversary of discovery of negative ions. CN Molecular-Negative-Ion Production and Film Preparation by CN Negative-Ion Beam Deposition.

  辻 博司; 富田哲生; 吉原孝明; 後藤康仁; 石川順三

  Ionics, Jul. 1997

  
• Current Status of Negative Ion Application Techniques-for the 100th anniversary of discovery of negative ions. Charging Free Negative-ion Implantation Technique and Negative-ion Implanter.

  石川順三; 辻 博司; 後藤康仁; 酒井滋樹; 丹上正安; 松田耕自

  Ionics, Jul. 1997

  
• Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation

  Ishikawa J; Gotoh Y; Sadakane S; Inoue K; Nagao M; Tsuji H

  Ivmc'97 - 1997 10th International Vacuum Microelectronics Conference, Technical Digest, 1997

  
• Emission characteristics of ZrN thin film field emitter array fabricated with ion beam assisted deposition technique

  Nagao M; Fujimori Y; Gotoh Y; Tsuji H; Ishikawa J; ELECTR DISPLAY; IND RES ASSOC KOREA

  Ivmc'97 - 1997 10th International Vacuum Microelectronics Conference, Technical Digest, 1997

  
• 分子イオン注入における構成原子の注入深さ分布の一致度の評価

  三村昌和; 辻 博司; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1996

  
• スパッタ型負重イオン源における初速エネルギー分布の測定

  中村修一; 辻 博司; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1996

  
• Ｍｏゲートを有するＳｉフィールドエミッタの作製

  内海一成; 定金伸治; 長尾昌善; 後藤康仁; 辻 博司; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1996

  
• Miniaturized liquid gallium field emission electron sources for vacuum microelectronics

  J Ishikawa; Y Gotoh; N Fujita; S Nishikawa; H Tsuji

  IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996

  
• Measurement of Secondary Electrons Emitted in Negative-Ion Implantation.

  池田茂雄; 豊田啓孝; 辻 博司; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1995

  
• コーン形状を持つＭＩＳ型微小電子源の開発

  定金伸治; 井上和則; 後藤康仁; 辻 博司; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1995

  
• ＲＦプラズマスパッタ型負重イオン源からの酸素及びフッ素負イオン引き出し特性

  富田哲生; 辻 博司; 豊田啓孝; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1995

  
• 負イオンビームによる粉末材料へのスキャッタレス・イオン注入

  辻 博司; 伊藤 一; 豊田啓孝; 南雲正二; 後藤康仁; 石川順三

  電気化学協会学術大会シンポジウム論文集, May 1995

  
• Negative-Ion Beam Material Processing Technology. Negative-Ion Implantation Technique.

  石川順三; 辻 博司; 後藤康仁; 酒井滋樹

  Ionics, Apr. 1995

  
• ２００ｋＶ中電流負イオン注入装置の開発

  酒井滋樹; 辻 博司; 豊田啓孝; 後藤康仁; 石川順三; 丹上正安; 松田耕自

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1994

  
• 低エネルギーイオン引き出しを目的とした小型マイクロ波イオン源の開発

  藤森敬和; 後藤康仁; 辻 博司; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1994

  
• 粉末へのイオン注入による粒子飛散の基礎現象

  辻 博司; 伊藤一; 豊田啓孝; 南雲正二; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1994

  
• 集束イオンビーム加工による横型極微フィールドエミッタの作製法と形状

  藤田直史; 大竹利也; 井上和則; 後藤康仁; 辻 博司; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1994

  
• 負イオン注入における弧立電極の帯電電位モデルとその実験的検証

  豊田啓孝; 辻博司; 南雲正二; 一原主税; 酒井滋樹; 後藤康仁; 石川順三

  粒子線の先端的応用技術に関するシンポジウム, Nov. 1994

  
• FABRICATION OF LATERAL-TYPE THIN-FILM EDGE FIELD EMITTERS BY FOCUSED ION-BEAM TECHNIQUE

  Y GOTOH; T OHTAKE; N FUJITA; K INOUE; H TSUJI; J ISHIKAWA

  IVMC 94 - 7TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, 1994

  
• Special Number/Negative-Ion Beam Technology and Its Application to Materials Science. The Charging Mechanism of Insulated Electrode in Negative-Ion Implantation.

  酒井滋樹; 後藤康仁; 辻 博司; 豊田啓孝; 石川順三; 丹上正安; 松田耕自

  Ionics, Jan. 1994

  
• Special Number/Negative-Ion Beam Technology and Its Application to Materials Science. Surface Potential Measurement of Negative-Ion-Implanted Insulators by Analysing Secondary Electron Energy Distribution.

  豊田啓孝; 辻 博司; 南雲正二; 酒井滋樹; 後藤康仁; 石川順三

  Ionics, Jan. 1994

  
• Special Number/Negative-Ion Beam Technology and Its Application to Materials Science. Surface Potential Measurement of Insulated Electrode by Negative-Ion Implantation.

  辻 博司; 酒井滋樹; 豊田啓孝; 岡山芳央; 後藤康仁; 石川順三

  Ionics, Jan. 1994

  
• Special Number. Negative-Ion Beam Technology and Its Application to Materials Science. Measurement of Heavy Negative Ion Production Efficiencies in Secondary Negative Ion Emission by Sputtering.

  辻博司; 石川順三; 後藤康仁

  Ionics, Jan. 1994

  
• Special Number. Negative-Ion Beam Technology and Its Application to Materials Science. Development of Intense Sputter-Type Heavy Negative Ion Sources in DC Operation.

  辻 博司; 岡山芳央; 石川順三; 後藤康仁

  Ionics, Jan. 1994

  
• Structures and properties of chromium thin films prepared by anisotropic emission effect sputter deposition

  Yasuhito Gotoh; Yasunori Taga

  Proceedings of the 12th Symposium on Ion Sources and Ion-Assisted Technology, 1989

  
• Impregnated electrode type liquid metal ion source (VII) - High current ion beam transporting system

  Toshio Kashiwagi; Yasuhito Gotoh; Hiroshi Tsuji; Junzo Ishikawa; Toshinori Takagi

  Proceedings of the 10th Symposium on Ion Sources and Ion-Assisted Technology, 1986

  
• IMPREGNATED-ELECTRODE-TYPE LIQUID METAL ION SOURCE (VI) - CHARACTERISTICS OF Au-Sb ALLOY ION SOURCE.

  Yasuhito Gotoh; Toshio Kashiwagi; Hiroshi Tsuji; Junzo Ishikawa; Toshinori Takagi

  Proceedings of the 10th Symposium on Ion Sources and Ion-Assisted Technology, 1986

  

Presentations

• 含浸電極型液体金属イオン源

  石川順三; 後藤康仁; 陳 国明; 高木俊宜

  日本真空協会関西支部研究会, 1985

  
• Radiation tolerant vacuum image sensor for robots working on removal of fuel debris

  Yasuhito Gotoh; Teryuki Morito; Masayoshi Nagao; Tamotsu Okamoto; Tomoya Igari; Takahiro Fukui; Tomoaki Masuzawa; Yoichiro Neo; Hidenori Mimura; Nobuhiro Sato; Masafumi Akiyoshi; Ikuji Takagi

  International Topical Workshop on Fukushima Daiichi Decommissioning Research, May 2019

  
• Field emitter array with electrostatic focusing electrode for radiation tolerant compact image sensor

  Y. Gotoh; M. Nagao; T. Masuzawa; Y. Neo; H. Mimura; T. Okamoto; M. Akiyoshi; N. Sato; I. Takagi

  11th International Vacuum Electron Sources Conference, 19 Oct. 2016, Invited

  
• フィールドエミッタアレイの開発と電子素子への応用

  後藤 康仁

  2015年 電子情報通信学会総合大会, 10 Mar. 2015, Invited

  
• 大電流・低エネルギーイオンビームの発生・輸送とその応用技術

  後藤 康仁

  第55回真空に関する連合講演会, 20 Nov. 2014, Invited

  
• Production of Extremely Low Energy Electron Beam with Silicon-Based Field Emitter Arrays and Its Application to Space Charge Neutralization of Low-Energy and High-Current Ion Beam

  Yasuhito Gotoh; Shuhei Taguchi; Keita Ikeda; Takayuki Kitagawa; Hiroshi Tsuji; Junzo Ishikawa; Shigeki Sakai

  2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 12 Jul. 2012, IEEE COMPUTER SOC, Invited

  
• Hafnium nitride thin film cold cathode for field emitter arrays

  Yasuhito Gotoh; Hiroshi Tsuji

  International Meeting for Information Display, 2011, Invited

  

Books and Other Publications

• 最新実用真空技術総覧 = New practical vacuum technology

  最新実用真空技術総覧編集委員会, Joint editor, 第1部 真空工学の基礎 第6編 真空装置の取り扱い 第1章 真空装置の管理 pp.343-345; 第2部 真空応用システム 第3編 薄膜 第4章 イオンビームを用いた薄膜形成技術 第1節 イオンを用いた薄膜形成技術の基礎 pp.578-581

  エヌ・ティー・エス, Feb. 2019

  Find Kyoto University's collection of books :

  
• 図解 薄膜技術(共著)

  後藤 康仁, Contributor

  培風館, 1999, Not refereed

  

Industrial Property Rights

• 特開2017-203699, 特願2016-095617, 撮像板及びカメラ

  後藤 康仁

  
• 特許第5634992号, 特願2011-518362, イオンビーム照射装置及びイオンビーム発散抑制方法

  ニコラエスク ダン; 酒井 滋樹; 石川 順三; 後藤 康仁

  
• 特許第5495236号, 特開2012-124030, 特願2010-273926, イオンビーム照射装置及びイオンビーム発散抑制方法

  ニコラエスク; ダン; アドリアン; 後藤 康仁; 酒井 滋樹

  
• 特開2013-211231, 特願2012-082301, 静電レンズシステム

  ダン ニコラエスク; 後藤 康仁

  
• 特開2012-124030, 特願2010-273926, イオンビーム照射装置及びイオンビーム発散抑制方法

  ニコラエスク; ダン; アドリアン; 後藤 康仁; 酒井 滋樹

  
• WO2010-143479, JP2010057405, イオンビーム照射装置及びイオンビーム発散抑制方法

  ニコラエスク ダン; 酒井 滋樹; 石川 順三; 後藤 康仁

  
• 特許4560785, イオン源，開孔形成方法

  後藤康仁; 石川順三; 一原主税; 小林明; 平野貴之

  
• 特許4514157, 特開2007-035370, 特願2005-214662, イオンビーム照射装置および半導体デバイスの製造方法

  石川順三; ダン・ニコラエスク; 後藤康仁; 酒井滋樹

  
• 特開2009-016233, 特願2007-178004, 電界放出型電子源の製造方法

  石川 順三; 辻 博司; 後藤 康仁; 竹内 光明; 酒井 滋樹

  
• 特開2006-037158, 特願2004-217885, イオンビームを用いた炭素系多層薄膜の製造方法

  後藤 康仁; 辻 博司; 石川 順三

  
• 特開2004-281129, 特願2003-068525, イオン源

  一原 主税; 小林 明; 井上 憲一; 後藤 康仁; 國仲 剛; 辻 博司; 石川 順三

  
• 特許第3460242号, 特開平6-267490, 特願平5-052495, 負イオン注入装置

  石川 順三; 辻 博司; 後藤 康仁; 酒井 滋樹

  
• 特許第3460241号, 特開平6-208843, 特願平5-003365, 負イオン注入装置

  石川 順三; 後藤 康仁; 酒井 滋樹

  
• 特開2003-031109, 特願2001-215809, ダイヤモンド電子源

  小橋 宏司; 林 和志; 後藤 康仁; 中原 宏勲

  
• 特許第2998470号, 特開平6-196122, 特願平4-344483, 負イオン注入装置

  石川 順三; 後藤 康仁; 酒井 滋樹

  
• 特許第2732129号, 特開平2-258250, 特願平1-199804, 超疎水性複合材料とその製造方法、および光学機能材料

  大脇 健史; 多賀 康訓; 石山 謙吾; 後藤 康仁

  

Awards

• 1992

  平成4年度電気関係学会関西支部連合大会奨励賞
• 2000

  The Best Oral Presentation Award, Second Prize, 13th International Vacuum Microelectronics Conference
• 2017

  The Vacuum Society of Japan, 日本真空学会第6回会誌賞
• 2017

  The Vacuum Society of Japan, 日本真空学会第4回フェロー

External funds: Kakenhi

• Improvement of stability and life of radiation and high temperature tolerant vacuum electron devices by lowering of operating voltage

  Grant-in-Aid for Scientific Research (B)

  Basic Section 31010:Nuclear engineering-related

  Kyoto University

  後藤 康仁

  From 01 Apr. 2021, To 31 Mar. 2024, Granted

  フィールドエミッタアレイ;耐熱・耐放射線;電子デバイス;窒素組成;仕事関数;窒化ハフニウム;Volcano構造フィールドエミッタアレイ;仕事関数制御

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21H01860/
• Proof-of-Concept of Novel Three Dimensional Atom Probe without Needle Structured Sample

  Grant-in-Aid for Challenging Exploratory Research

  Kyoto University

  Yasuhito Gotoh

  From 01 Apr. 2016, To 31 Mar. 2018, Project Closed

  アトムプローブ;静電拡大投影;短焦点距離;平坦;倍率;拡大投影;電極間隔;空間分解能;単孔静電レンズ;絶縁体;精密制御装置;ピエゾ素子;三次元アトムプローブ;単孔レンズ;微小空隙;微細加工

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16K13685/
• Development of miniaturized electron sources for electron and imaging device with radiation tolerance of 10 MGy and temperature of 300 degrees in Celsius

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Yasuhito GOTOH

  From 01 Apr. 2016, To 31 Mar. 2019, Project Closed

  フィールドエミッタアレイ;絶縁膜;絶縁耐圧;制動放射X線;ガンマ線;耐放射線性;酸化膜;窒化膜;フィールドエミッタ;電流電圧特性;電子源;二酸化シリコン;窒化シリコン;X線;電子放出;微小電子源;撮像デバイス;電子デバイス;耐熱性;エックス線;可搬型小型真空装置

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16H04631/
• Research on nanostructured quantum dots-size and environment-hard high power devices

  Grant-in-Aid for Scientific Research (B)

  Shizuoka University

  MASAYUKI NAKAMOTO

  From 01 Apr. 2015, To 31 Mar. 2018, Project Closed

  電子デバイス・機器;先端機能デバイス;マイクロ・ナノデバイス;パワーデバイス;電力変換

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15H03991/
• Quantum-dot size, nanostructure and low work function Green devices fabricated by precise position control

  Grant-in-Aid for Scientific Research (B)

  Shizuoka University

  Masayuki NAKAMOTO

  From 01 Apr. 2011, To 31 Mar. 2014, Project Closed

  電子デバイス・機器;先端機能デバイス;マイクロ・ナノデバイス;微小電子源;電力変換

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360151/
• Development of in situ analyzer of field emitters and analysis of variation in field emission properties

  Grant-in-Aid for Scientific Research (C)

  Kyoto University

  Yasuhito GOTOH

  From 01 Apr. 2007, To 31 Mar. 2009, Project Closed

  電界放出;その場解析;特性揺らぎ;電界放射顕微鏡像;切片傾きチャート;ファウラー-ノルドハイムプロット;電流変動;同時取り込み;FEM像;SKチャート;FNプロット;その場特性解析

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19560024/
• Nano-structure devices fabricated by precise position and growth control of carbon nanotubes

  Grant-in-Aid for Scientific Research (B)

  Shizuoka University

  Masayuki NAKAMOTO

  From 01 Apr. 2007, To 31 Mar. 2010, Project Closed

  カーボンナノチューブ;NEMS;微小電子源;真空ナノエレクトロニクス;ディスプレイ;FED;電界放出電子源;真空ナノパワースイッチングデバイス;CNT

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19360160/
• Study on Patterned Surface by Negative Ion Implantation and Neuron Network by Nerve Cell for Mutual Communication

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Hiroshi TSUJI

  From 01 Apr. 2005, To 31 Mar. 2008, Project Closed

  負イオン注入;表面改質;生体適合性;神経細胞;配列接着;幹細胞;間葉系幹細胞;神経回路;パターン化細胞接着制御;脳神経細胞;体性幹細胞;間葉幹細胞;分化誘導;人為的神経回路網;親水性;神経細胞接着;神経突起伸展;人為的神経回路;双方向情報伝達;神経刺激;バイオインターフェイス, Negative ion implantation;Surface modification;Biocompatibility;Nerve cell;Align adhesion of cell;Stem cell;Mesenchymal stem cell;Neuron network

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360021/
• Formation of Bio-interface by Patterned Negative Ion Implantation Treatment

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Hiroshi TSUJI

  From 01 Apr. 2002, To 31 Mar. 2005, Project Closed

  負イオン注入;接触角;神経細胞接着特性;人為的神経回路;バイオインターフェイス;神経突起伸展特性;外部電気刺激;分化誘導;神経細胞接着性;人為的神経回路網;神経再生;再生医療, Negative ion implantation;Contact angle measurement;Nerve cell attachment;Artificial nerve network;Bio-interface;Neurite extension property;External electric impulse;Induction of generation

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14350020/
• ミクロン寸法ナノイオン源開発に関する研究

  Grant-in-Aid for Exploratory Research

  Kyoto University

  石川 順三

  From 01 Apr. 2001, To 31 Mar. 2003, Project Closed

  ナノイオン源;ミクロン領域プラズマ;パッシェンの法則;プラズマ生成;ガス放電;フィールドエミッター;フォトリソグラフィ;シリコンエミッター

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13875019/
• 金サマリウム合金の薄膜物性と電子放出特性に関する研究

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  後藤 康仁

  From 01 Apr. 2000, To 31 Mar. 2002, Project Closed

  金;サマリウム;薄膜;マグネトロンスパッタ法;組成;仕事関数;電子放出特性;雑音電力;合金;真空蒸着法;ラザフォード後方散乱法;光電子分光法

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12750027/
• Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources

  Grant-in-Aid for Scientific Research on Priority Areas

  Science and Engineering

  Kyoto University

  Junzo ISHIKAWA

  From 01 Apr. 2000, To 31 Mar. 2004, Project Closed

  遷移金属窒化物;遷移金属炭化物;イオンビームアシスト蒸着法;マグネトロンスパッタ法;仕事関数;配向性;電子放出特性;安定性;電界電子放出;窒化にオブ;窒化ハフニウム;核共鳴散乱法;遷移金属;窒化物;炭化物;マグネトロンスパッタリング;イオンビーム援用蒸着;配向制御;組成;X線回析;窒化タンタル薄膜;炭素イオンビーム, Transition metal nitride;Transition metal carbide;Ion beam assisted deposition;Magnetron sputtering;Work function;Orientation;Electron emission property;Stability

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12135204/
• 微粒子表面への量子点列の形成と非線形光学特性に関する研究

  Grant-in-Aid for Exploratory Research

  Kyoto University

  辻 博司

  From 01 Apr. 1999, To 31 Mar. 2001, Project Closed

  負イオン注入;量子ドット;シリカガラス;超微粒子;プラズモン共鳴吸収;二酸化チタン;光触媒;メチレンブルーの脱色;ガラス;非線形光学特性;3次の非線形光感受率;縮退四光波混合法

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11875013/
• Ion Beam Processing of Polymeric Biomaterials

  Grant-in-Aid for Scientific Research (B).

  KYOTO UNIVERSITY

  Junzo ISHIKAWA

  From 01 Apr. 1999, To 31 Mar. 2001, Project Closed

  イオンビーム処理;イオン注入;ポリスチレン;ポリ乳酸;ポリジメチルシロキサン;神経細胞;選択的細胞接着;選択的神経突起伸展;負イオン注入;シリコーン;吸収性高分子;細胞接着特性;ガイドチューブ;正イオン注入;生体適合性;接触角;官能基;親水性, Ion Beam Processing;Ion Implantation;Selective Cell Attachment;Neuron;Polystyrene;Polydimethylsiloxane;Poly-lactic-acid;Artificial Neuron Network

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11694148/
• DEVELOPMENT OF GATED TRANSITION METAL NITRIDE FIELD EMITTER ARRAYS

  Grant-in-Aid for Scientific Research (B).

  KYOTO UNIVERSITY

  Yasuhito GOTOH

  From 01 Apr. 1999, To 31 Mar. 2001, Project Closed

  窒化ニオブ薄膜;極微フィールドエミッタアレイ;ゲート電極;イオンビーム援用蒸着;転写モールド法;エッチバック法;電子放出特性;エミッションパターン;高真空;イオンビームアシスト蒸着;テトラメチルアンモニウムヒドロキシド;水酸化カリウム, niobium nitride thin films;field emitter array;gate electrode;ion beam assisted deposition;transfer mold technique;etching back method;electron emission property;emission pattern

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11555006/
• 窒化ニオブ薄膜を用いた極微フィールドエミッタアレイの作製とその電界放射特性の評価

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  後藤 康仁

  From 01 Apr. 1997, To 31 Mar. 1999, Project Closed

  窒化ニオブ薄膜;極微フィールドエミッタアレイ;電界放射;イオンビーム援用蒸着;組成;仕事関数;安定性;イオン・金属粒子到達比;基板温度;スパッタ率

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09750016/
• 遷移金属窒化物フィールドエミッタアレイの作製と電界放射特性の評価

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  後藤 康仁

  From 01 Apr. 1996, To 31 Mar. 1997, Project Closed

  遷移金属窒化物;極微電解放射電子源;仕事関数;イオンビームアシスト蒸着法;組成;ガス雰囲気;雑音電力;S-Kチャート

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08750036/
• 絶縁物への負イオン注入における無帯電表面電位発現機構の解明

  Grant-in-Aid for Scientific Research (C)

  Kyoto University

  辻 博司

  From 01 Apr. 1996, To 31 Mar. 1997, Project Closed

  負イオン注入;絶縁物;表面電位;二次電子放出比;二次電子エネルギー分布;電気二重層;無帯電;表面障壁

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650031/
• Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam

  Grant-in-Aid for Scientific Research (A)

  KYOTO UNIVERSITY

  Junzo ISHIKAWA

  From 01 Apr. 1996, To 31 Mar. 1998, Project Closed

  負イオン注入;粉体;微粒子;無帯電;無飛散;攪拌;均一注入処理;球体に対する注入分布;粒子飛散;チャージアップ;表面解質;触媒, Negative-ion implantation;Powders;Micro particles;Charge-up free;Non scattering;Agitation of powders;Uniform implantation;Depth profile for spheres

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555172/
• Negative-Ion Beam Material Processing Techniques

  Grant-in-Aid for international Scientific Research

  KYOTO UNIVERSITY

  Junzo ISHIKAWA

  From 01 Apr. 1996, To 31 Mar. 1998, Project Closed

  負イオンビーム;材料プロセス技術;負イオンビーム蒸着;準安定物質;負イオン注入;無帯電イオン注入;無飛散粉体微粒子負イオン注入;生体適合性制御;負イオン;大電流負イオン源;空間電荷;発散角;材料プロセス;低帯電;新材料, Negative-ion beam;Material processing;Negative-ion beam deposition;Metastable material;Negative-ion implantation;Charging free ion implantation;Non-scattering implantation into powders;Depth profile for spheres

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044140/
• Study on Negative Ion Implantation for the Surface Modification of Polymer Materials without Defects for Bio-compatibilty Control

  Grant-in-Aid for General Scientific Research (B)

  KYOTO UNIVERSITY

  Hiroshi TSUJI

  From 01 Apr. 1994, To 31 Mar. 1996, Project Closed

  負イオン源;負イオン注入;高分子材料;チャージアップ;表面電位;親疎水性;生体適合性;粉末;負イオン;負イオンビーム注入;医用高分子;絶縁物;結晶性子;物性制御, Negative-ion source;Negative-ion implantation;Polymers;Insulator;Charge-up free;Contact angle;Biocompatibility;Powders

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06452112/
• 大電流金属イオンセルフスパッタを用いた超高純度・低抵抗金属薄膜形成技術の開発

  Grant-in-Aid for Encouragement of Young Scientists (A)

  Kyoto University

  後藤 康仁

  From 01 Apr. 1993, To 31 Mar. 1994, Project Closed

  銅イオンビーム;セルフスパッタ;銅薄膜;LSI配線技術;高純度;低抵抗;運動エネルギー

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05750026/
• Development of Charge-up Free lon lmplantation by Using Negative lon Beam

  Grant-in-Aid for Developmental Scientific Research (B)

  KYOTO UNIVERSITY

  Junzo ISHIKAWA

  From 01 Apr. 1993, To 31 Mar. 1995, Project Closed

  負イオン注入;負イオンビーム輸送;チャージアップ;二次電子エネルギー分布;二次電子放出比;帯電緩和;絶縁物;ゲート酸化膜;負イオン;イオン注入;無帯電;帯電電位;負イオン源;二次負イオン生成, Negative-Ion Implantation;Charge-up;Reduction of Charging;Secondary Electron Emission Yield;Electron Energy Distribution;Negative-Ion Source;Negative-Ion Beam Transport;Gate Oxide Layr

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555008/
• Establishment of the Negative-Ion Beam Technology for Material Modification

  Grant-in-Aid for General Scientific Research (A)

  KYOTO UNIVERSITY

  Junzo ISHIKAWA

  From 01 Apr. 1993, To 31 Mar. 1996, Project Closed

  負イオン源;負イオン注入;帯電;絶縁物;無帯電;粒子飛散;電気二重層;物性制御;負イオンビーム蒸着;イオンビーム減速;チャージアップ;帯電緩和;低エネルギー;負イオン;イオンビーム輸送;空間電荷中和;二次電子;二次負イオン生成, Nagative-ion source;Negative-ion implantation;Charged up;Insulator;Charge-up free;Particle-scattering;Electric double layr;Material modification

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05402027/
• Development of high current liquid metal ion source for large area, high speed surface treatment

  Grant-in-Aid for Developmental Scientific Research (B)

  KYOTO UNIVERSITY

  J ISHIKAWA

  From 01 Apr. 1991, To 31 Mar. 1993, Project Closed

  大電流イオンビーム;液体金属イオン源;含浸電極;多点放出;表面処理;ビームプロファイル;シートビーム;ドロップレット;誘導加熱;集束レンズ;大電流イオンビ-ム;ビ-ムプロファイル;シ-トビ-ム, high current ion beam;liquid metal ion source;impregnated-electrode;multiple-point-emission;surface modification;beam profile;sheet shaped beam;droplet

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03555002/

Education

Teaching subject(s)

• From 01 Apr. 2024, To 31 Mar. 2025

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Vacuum Electronic Engineering

  6117, Spring, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Charged Particle Beam Apparatus

  C801, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Vacuum Electronic Engineering

  6117, Spring, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Charged Particle Beam Apparatus

  C801, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Charged Particle Beam Apparatus

  C801, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Vacuum Electronic Engineering

  6117, Spring, Faculty of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Advanced Practice of Electrical and Electronic Engineering

  6202, Fall, Faculty of Engineering, 2
• From Apr. 2011, To Mar. 2012

  電子装置特論

  Fall, 工学研究科
• From Apr. 2011, To Mar. 2012

  真空電子工学１

  Spring, 工学部
• From Apr. 2011, To Mar. 2012

  真空電子工学２

  Spring, 工学部
• From Apr. 2011, To Mar. 2012

  電気回路と微分方程式

  Spring, 工学部
• From Apr. 2011, To Mar. 2012

  Electrical Circuit and Differential Equation

  Spring, 全学共通科目
• From Apr. 2011, To Mar. 2012

  電気電子工学実習Ａ

  Spring, 工学部
• From Apr. 2011, To Mar. 2012

  電気電子工学実習Ｂ

  Fall, 工学部
• From Apr. 2011, To Mar. 2012

  電気電子工学実験Ａ

  Spring, 工学部
• From Apr. 2011, To Mar. 2012

  電気電子工学実験Ｂ

  Fall, 工学部
• From Apr. 2012, To Mar. 2013

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2012, To Mar. 2013

  Vacuum Electronic Engineering 2

  Spring, 工学部
• From Apr. 2012, To Mar. 2013

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2012, To Mar. 2013

  Electrical Circuit and Differential Equation

  Spring, 全学共通科目
• From Apr. 2012, To Mar. 2013

  Electric Circuits and Differential Equations

  Spring, 工学部
• From Apr. 2013, To Mar. 2014

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2013, To Mar. 2014

  Vacuum Electronic Engineering 2

  Spring, 工学部
• From Apr. 2013, To Mar. 2014

  Electric Circuits and Differential Equations

  Spring, 工学部
• From Apr. 2013, To Mar. 2014

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2013, To Mar. 2014

  Electrical Circuit and Differential Equation

  Spring, 全学共通科目
• From Apr. 2014, To Mar. 2015

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2014, To Mar. 2015

  Vacuum Electronic Engineering 2

  Spring, 工学部
• From Apr. 2014, To Mar. 2015

  Electric Circuits and Differential Equations

  Spring, 工学部
• From Apr. 2014, To Mar. 2015

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2014, To Mar. 2015

  Electrical Circuit and Differential Equation

  Spring, 全学共通科目
• From Apr. 2015, To Mar. 2016

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2015, To Mar. 2016

  Vacuum Electronic Engineering 2

  Spring, 工学部
• From Apr. 2015, To Mar. 2016

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Science

  Fall, 総合生存学館
• From Apr. 2016, To Mar. 2017

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2016, To Mar. 2017

  Solid State Physics and Engineering

  Spring, 工学部
• From Apr. 2016, To Mar. 2017

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Science

  Fall, 総合生存学館
• From Apr. 2017, To Mar. 2018

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2017, To Mar. 2018

  Solid State Physics and Engineering

  Spring, 工学部
• From Apr. 2017, To Mar. 2018

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Vacuum Electronic Engineering 1

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Solid State Physics and Engineering

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2019, To Mar. 2020

  Vacuum Electronic Engineering

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Solid State Physics and Engineering

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2020, To Mar. 2021

  Vacuum Electronic Engineering

  Spring, 工学部
• From Apr. 2020, To Mar. 2021

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2021, To Mar. 2022

  Vacuum Electronic Engineering

  Spring, 工学部
• From Apr. 2021, To Mar. 2022

  Charged Particle Beam Apparatus

  Fall, 工学研究科
• From Apr. 2021, To Mar. 2022

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部

Academic, Social Contribution

Committee Memberships

• From 2023, To 2023

  Chairperson of Scientific Committee, The 14th International Vacuum Electron Sources Conference
• From 2023, To 2024

  Member of Executive Committee, Local Arrangement Committee, The 17th International Symposium on Sputtering and Plasma Processes
• From 2022, To 2023

  Member of Education Committee, The Japan Society of Vacuum and Surface Science
• From 2021, To 2023

  会長, 次世代真空エレクトロニクス研究会
• From 2022, To 2023

  Member of Steering Committee, The 26th International Conference on Ion Beam Analysis, IBA2023
• From 2018, To Present

  International Steering Committee Member, International Vacuum Nanoelectronics Conference
• From 2018, To 2023

  スパッタリングおよびプラズマプロセス技術部会 部会長, 公益社団法人日本表面真空学会
• From 2018, To Present

  Fellow, The Japan Society of Vacuum and Surface Science
• From 2007, To Present

  評議員, 財団法人イオン工学振興財団/一般財団法人イオン工学振興財団
• From 2020, To 2021

  学術講演会委員会委員, 公益社団法人日本表面真空学会
• From 2019, To 2019

  関西支部 幹事, 公益社団法人日本表面真空学会
• From 2019, To 2019

  Member of Steering Committee, The 23rd International Workshop on Inelastic Ion-Surface Collisions
• From 2018, To 2019

  真空技術調査部会 副部会長、研究例会企画専門部会 部会長, 公益社団法人日本表面真空学会
• From 2016, To 2019

  Member of Organizing Committee, International Symposia on Sputtering and Plasma Processes, ISSP2017 and ISSP2019
• From 2004, To 2019

  真空ナノエレクトロニクス第158委員会 庶務幹事, 独立行政法人日本学術振興会
• From 2018, To 2018

  プログラム委員, 2018年日本表面真空学会学術講演会委員会
• From 2018, To 2018

  Chair of Organizing Committee, The 31st International Vacuum Nanoelectronics Conference
• From 2017, To 2017

  日本真空学会第58回真空に関する連合講演会実行委員会 副委員長, 2017年真空・表面科学合同講演会
• From 2017, To 2017

  講演・研究会企画委員会 委員長, 一般社団法人日本真空学会
• From 2017, To 2017

  Fellow, The Vacuum Society of Japan
• From 2014, To 2017

  関西支部 幹事, 一般社団法人日本真空学会
• From 2014, To 2017

  スパッタリングおよびプラズマプロセス技術部会 副部会長, 一般社団法人日本真空学会
• From 2008, To 2017

  運営委員会 委員, 真空技術基礎講習会
• From 2008, To 2017

  Director, The Vacuum Society of Japan
• From 2010, To 2015

  Member of Organizing Committee, Chair of Local Organizing Committee, International Symposia on Sputtering and Plasma Processes (ISSP2011, ISSP2013, ISSP2015)
• From 2008, To 2015

  Program Committee Member of FED Workshop, International Display Workshops, IDW '08 - IDW '13
• From 2014, To 2014

  第55回真空に関する連合講演会 ポスター会場委員, 一般社団法人日本真空学会
• From 2012, To 2014

  Vice Chair of Program Committee, International Display Workshops (IDW/AD '12, IDW '13, IDW '14)
• From 2009, To 2014

  Program Committee Member of FED Workshop, International Display Workshops (IDW '09 - IDW '14)
• From 2013, To 2013

  教育委員会 委員, 一般社団法人日本真空学会
• From 2011, To 2013

  運営委員会 委員長, 真空技術基礎講習会
• From 2010, To 2013

  スパッタリングおよびプラズマプロセス技術部会 幹事, 一般社団法人日本真空協会
• From 2012, To 2012

  Member of Organizing Commiteee, The 11th Asia Pacific Conference on Plasma Science and Technology and the 25th Symposium on Plasma Science for Materials, APCPST-11/SPSM-25
• From 2008, To 2010

  運営委員会 副委員長, 真空技術基礎講習会
• From 2009, To 2009

  Program Committee Chair/Guest Editor of JVSTB, The 22nd International Vacuum Nanoelectronics Conference
• From 2008, To 2009

  編集委員, 社団法人応用物理学会
• From 2006, To 2009

  Member of Organizing Committee, Editorial Chair, Special Issue Managing Guest Editor of Vacuum, International Symposia on Sputtering and Plasma Processes (ISSP2007, ISSP2009)
• From 2007, To 2007

  Member of Organizing Committee, The 20th International Microprocesses and Nanotechnology Conference, MNC 2007
• From 2006, To 2006

  Executive Committee, Local Arrangement, The 13th International Display Workshops, IDW '06
• From 2005, To 2005

  Member of Organizing Committee, Guest Editor of Vacuum, The 8th International Symposium on Sputtering and Plasma Processes, ISSP2005
• From 2003, To 2003

  Member of Local Organizing Committee/Editor, The 16th International Vacuum Microelectronics Conference
• From 2000, To 2003

  プログラム編集委員, 社団法人応用物理学会
• From 2000, To 2003

  代議員, 社団法人応用物理学会
• From 2001, To 2002

  関西支部 幹事, 社団法人応用物理学会
• From 1998, To 1999

  Member of Local Organizing Committee, Then 9th International Conference on Ion Sources
• From 1990, To 1999

  事務局, 粒子線の先端的応用技術に関するワークショップ/シンポジウム
• From 1994, To 1995

  Kansai Branch Secretary, The Vacuum Society of Japan

Social Contribution

• 真空の概念 I, II

  Lecturer

  一般社団法人日本真空学会 関西支部, 役に立つ真空技術入門講座, From 2014, To 2022

  
• 真空技術基礎講習会

  Lecturer

  日本真空協会関西支部/日本真空工業会関西支部/大阪府技術協会, From 1994, To Present

  
• 真空技術入門講座

  Lecturer

  一般社団法人日本真空学会関西支部, From 26 Sep. 2017, To 26 Sep. 2017

  
• 真空ナノエレクトロニクスデバイスの開発－過酷環境下の電子デバイス

  Lecturer

  京都大学大学院工学研究科附属量子理工学教育研究センター, 第17回公開シンポジウム, From 21 Oct. 2016, To 21 Oct. 2016

  
• フィールドエミッタアレイの新しい応用技術～耐熱・耐放射線素子から光源応用まで～

  Lecturer

  一般社団法人日本真空学会 関西支部, 実用技術セミナー 2015, From 07 Dec. 2015, To 07 Dec. 2015

  
• 真空管から真空ナノエレクトロニクスへ

  Lecturer

  日刊工業新聞社, 真空展 VACUUM2014併設 第15回真空シンポジウム, From 16 Oct. 2014, To 16 Oct. 2014

  
• 真空の取扱い

  Lecturer

  一般社団法人日本真空学会 関西支部, 役に立つ真空技術入門講座, From 2011, To 2013

  
• 真空の取扱い

  Lecturer

  一般社団法人日本真空学会 関西支部, 第1回役に立つ真空技術入門講座, From 04 Aug. 2009, To 04 Aug. 2009

  
• 科学と生活フェスティバル

  Logistic support

  社団法人応用物理学会 関西支部, From 1999, To 1999