Basic Information

Professional Memberships

• 日本材料学会
• 応用物理学会

Academic Degree

• 工学修士(京都大学)
• 工学博士(京都大学)

Academic Resume (Graduate Schools)

• Kyoto University, 大学院工学研究科修士課程電気工学専攻, 修了

Academic Resume (Undergraduate School/Majors)

• Kyoto University, 工学部電気工学科, 卒業

Research History

• From Apr. 2021, To Present

  Kyoto University, 研究員
• From Apr. 2001, To Mar. 2021

  Kyoto University, Professor
• From Apr. 1990, To Mar. 2001

  Kyoto University, Associate Professor
• From Aug. 1994, To Apr. 1995

  North Carolina State University, 研究員
• From Apr. 1980, To Mar. 1990

  Kyoto University, Assistant Professor

Language of Instruction

• English

ID,URL

• J-Global ID

  200901033344335803

• External link

  http://pesec.t.kyoto-u.ac.jp/ematerial/

researchmap URL

• https://researchmap.jp/read0012706

Research

Research Interests

• deep-UV optical devices
• power devices
• electrical and optical properties
• crystal growth
• ultra-wide band gap oxide semiconductors

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
• Nanotechnology/Materials, Optical engineering and photonics
• Nanotechnology/Materials, Crystal engineering
• Nanotechnology/Materials, Applied materials

Papers

• Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga₂O₃ RF MESFETs

  Hikaru Ikeda; Takeru Wakamatsu; Yuji Ando; Hidemasa Takahashi; Ryutaro Makisako; Tetsuzo Ueda; Jun Suda; Katsuhisa Tanaka; Shizuo Fujita; Hidetaka Sugaya

  JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Oct. 2025, Peer-reviewed

  
• "Realization of cathodoluminescence in 180 nm spectral range by suppressing thermal stress in mist chemical vapor deposition of rocksalt-structured MgZnO films" (vol 63, 02SP30, 2024)

  Kotaro Ogawa; Wataru Kosaka; Hiroya Kusaka; Kanta Kudo; Soichiro Ohno; Izumi Serizawa; Yuichi Ota; Tomohiro Yamaguchi; Tohru Honda; Kentaro Kaneko; Shizuo Fujita; Takeyoshi Onuma

  JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Apr. 2025, Peer-reviewed

  
• Rocksalt-structured MgZnO-based UV-C lamp emitting in 190-220 nm spectral range using 146 nm line of Kr₂* generated by dielectric barrier discharge

  Kotaro Ogawa; Toshiki Mitomi; Hideki Yajima; Wataru Kosaka; Hiroya Kusaka; Go Kobayashi; Tomohiro Yamaguchi; Tohru Honda; Kentaro Kaneko; Shizuo Fujita; Izumi Serizawa; Takeyoshi Onuma

  APPLIED PHYSICS EXPRESS, 01 Dec. 2024, Peer-reviewed

  
• Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates

  Hitoshi Takane; Yuji Ando; Hidemasa Takahashi; Ryutaro Makisako; Hikaru Ikeda; Tetsuzo Ueda; Jun Suda; Katsuhisa Tanaka; Shizuo Fujita; Hidetaka Sugaya

  APPLIED PHYSICS EXPRESS, 01 Aug. 2023, Peer-reviewed

  
• Growth of α-In₂O₃ films with different concentrations of In₂O₃ powder used as source precursor by mist chemical vapor deposition

  Akito Taguchi; Takumi Yamamoto; Kentaro Kaneko; Ken Goto; Takeyoshi Onuma; Tohru Honda; Yoshinao Kumagai; Shizuo Fujita; Tomohiro Yamaguchi

  JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jun. 2023

  
• Progress in α-Ga₂O₃ for practical device applications

  Kentaro Kaneko; Shizuo Fujita; Takashi Shinohe; Katsuhisa Tanaka

  JAPANESE JOURNAL OF APPLIED PHYSICS, 01 Jun. 2023

  
• Novel p-type oxides with corundum structure for gallium oxide electronics

  Kentaro Kaneko; Shizuo Fujita

  JOURNAL OF MATERIALS RESEARCH, 14 Feb. 2022

  
• Mist Chemical Vapor Deposition Growth of α-In₂O₃ Films Using Indium Oxide Powder as Source Precursor

  Akito Taguchi; Subaru Takahashi; Atsushi Sekiguchi; Kentaro Kaneko; Shizuo Fujita; Takeyoshi Onuma; Tohru Honda; Tomohiro Yamaguchi

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Feb. 2022

  
• Vacuum Ultraviolet Emission Properties of Rocksalt-Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates

  Wataru Kosaka; Shoma Hoshi; Kanta Kudo; Kentaro Kaneko; Tomohiro Yamaguchi; Tohru Honda; Shizuo Fujita; Takeyoshi Onuma

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Feb. 2022

  
• Prospects for phase engineering of semi-stable Ga₂O₃ semiconductor thin films using mist chemical vapor deposition

  Kentaro Kaneko; Kazuyuki Uno; Riena Jinno; Shizuo Fujita

  Journal of Applied Physics, 07 Mar. 2022

  
• Research of semiconductor materials that emit in the vacuum ultraviolet region of 200 nm or less

  Kentaro Kaneko; Takeyoshi Onuma; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 2021

  
• Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD

  Tomohiro Yamaguchi; Subaru Takahashi; Takanori Kiguchi; Atsushi Sekiguchi; Kentaro Kaneko; Shizuo Fujita; Hiroki Nagai; Mitsunobu Sato; Takeyoshi Onuma; Tohru Honda

  Applied Physics Express, 01 Jul. 2020, Peer-reviewed

  
• P-type semiconductors in gallium oxide electronics

  Kentaro Kaneko; Shu Takemoto; Shin-ichi Kan; Takashi Shinohe; Shizuo Fujita

  CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, 2019

  
• Vertical Schottky Barrier Diodes of alpha-Ga2O3 Fabricated by Mist Epitaxy

  Masaya Oda; Junjiroh Kikawa; Akio Takatsuka; Rie Tokuda; Takahiro Sasaki; Kentaro Kaneko; Shizuo Fujita; Toshimi Hitora

  2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, Peer-reviewed

  
• Fabrication of PEDOT:PSS/ZnMgO Schottky-type ultraviolet sensors on glass substrates with solution-based mist deposition technique and hard-mask patterning

  Takumi Ikenoue; Naoki Kameyama; Shizuo Fujita

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, Peer-reviewed

  
• An approach for single crystalline zinc oxide thin films with fine channel mist chemical vapor deposition method

  Toshiyuki Kawaharamura; Shizuo Fujita

  Physica Status Solidi (C) Current Topics in Solid State Physics, 2008, Peer-reviewed

  
• Direct Growth of ZnO Whiskers Bridging between Micron-Gap Electrodes in Aqueous Solution

  KAMETANI Keisuke; DUMONT Hérve; IMAMOTO Hiroshi; FUJITA Shizuo

  journal of the Japan Society for Testing Materials, 2007

  
• Linear-source ultrasonic spray chemical vapor deposition method for fabrication of ZnMgO films and ultraviolet photodetectors

  Yudai Kamada; Toshiyuki Kawaharamura; Hiroyuki Nishinaka; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Aug. 2006, Peer-reviewed

  
• Formation of ZnO nanodot arrays along the step edges on R-face sapphire by metalorganic chemical vapor deposition

  K Kametani; H Imamoto; S Fujita

  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, May 2006, Peer-reviewed

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• Fabrication of wide-band-gap Mgx Zn1-x O quasi-ternary alloys by molecular-beam epitaxy

  Hiroshi Tanaka; Shigeo Fujita; Shizuo Fujita

  Applied Physics Letters, 09 May 2005, Peer-reviewed

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• ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles

  Sang-Woo Kim; Shizuo Fujita; Shigeo Fujita

  Applied Physics Letters, 2005, Peer-reviewed

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• Multidimensional ZnO nanodot arrays by self‐ordering on functionalised substrates

  Sang‐Woo Kim; Masaya Ueda; Teruhisa Kotani; Shizuo Fujita; Shigeo Fujita

  physica status solidi (c), Mar. 2004

  
• Selective growth of ZnO nanodots prepared by metalorganic chemical vapor deposition on focused-ion beam-nanopatterned substrates

  Sang-Woo Kim; Teruhisa Kotani; Masaya Ueda; Shizuo Fujita; Shigeo Fujita

  Physica E: Low-dimensional Systems and Nanostructures, Mar. 2004

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• Molecular beam epitaxy of MgxZn1-xO layers without wurzite-rocksalt phase mixing from x = 0 to 1 as an effect of ZnO buffer layer

  Shizuo Fujita; Tsuyoshi Takagi; Hiroshi Tanaka; Shigeo Fujita

  Physica Status Solidi (B) Basic Research, Mar. 2004, Peer-reviewed

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• Characterization of bulk ZnO substrates and homoepitaxial growth

  Takumi Moriyama; Shigeo Fujita; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 2004, Peer-reviewed

  
• Hydrogen bonding effect on photocurrent generation in porphyrin-fullerene photoelectrochemical devices

  Imahori, H; Liu, J.-C; Hosomizu, K; Sato, T; Mori, Y; Hotta, H; Matano, Y; Maruyama, N; Araki, Y; Ito, T; Fujita, S

  Chem. Commun., 2004, Peer-reviewed

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• Synthesis and Electrolytic Polymerization of the Ethylenedioxy-Substituted Terthiophene-Fullerene Dyad

  Yamazaki, T; Murata, Y; Komatsu, K; Furukawa, K; Morita, M; Maruyama, N; Yamao, T; Fujita, S

  Org. Lett., 2004, Peer-reviewed

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• Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition

  Sang-Woo Kim; Teruhisa Kotani; Masaya Ueda; Shizuo Fujita; Shigeo Fujita

  Applied Physics Letters, 27 Oct. 2003

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• Self-Tailored One-Dimensional ZnO Nanodot Arrays Formed by Metalorganic Chemical Vapor Deposition

  Kim Sang-Woo; Ueda Masaya; Kotani Teruhisa; Fujita Shizuo; Fujita Shigeo

  Jpn J Appl Phys, 01 Jun. 2003

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• Self-organized ZnO quantum dots on SiO2/Si substrates by metalorganic chemical vapor deposition

  Sang-Woo Kim; Shizuo Fujita; Shigeo Fujita

  Applied Physics Letters, 23 Dec. 2002, Peer-reviewed

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• Self-Assembled Three-Dimensional ZnO Nanosize Islands on Si Substrates with SiO2 Intermediate Layer by Metalorganic Chemical Vapor Deposition.

  Kim Sang-Woo; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 2002

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• Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers

  M Funato; S Yamamoto; K Kaisei; K Shimogami; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Dec. 2001

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• Growth mechanism of hexagonal GaN on AlAs-pregrown GaAs(001) and {11n} substrates

  M Funato; S Fujita; S Yamamoto; K Kaisei; K Shimogami; S Fujita

  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Nov. 2001, Peer-reviewed

  
• Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy Grown ZnO Layer as a Substrate.

  Ogata Ken-ichi; Kawanishi Toru; Maejima Keigou; Sakurai Keiichiro; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 2001

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• Comparative study of photoluminescence dynamics of tris(8-hydroxyquinoline) aluminum-based organic multilayer structures with different types of energy lineups

  S Fujita; T Nakazawa; M Asano; S Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Sep. 2000, Peer-reviewed

  
• Effects of substrate offset angles on MBE growth of ZnO

  Keiichiro Sakurai; Masahiko Kanehiro; Ken Nakahara; Tetsuhiro Tanabe; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 02 Jun. 2000, Peer-reviewed

  
• Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy.

  Sakurai Keiichiro; Kubo Takeshi; Kajita Daisuke; Tanabe Tetsuhiro; Takasu Hidemi; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 2000

  
• Effects of oxygen plasma condition on MBE growth of ZnO

  Keiichiro Sakurai; Masahiko Kanehiro; Ken Nakahara; Tetsuhiro Tanabe; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 2000, Peer-reviewed

  
• Growth of ZnO by molecular beam epitaxy using NO2 as oxygen source

  Keiichiro Sakurai; Daiji Iwata; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999

  
• Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures

  Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Journal of Applied Physics, 1999, Peer-reviewed

  
• Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance

  Jiti Nukeaw; Yasufumi Fujiwara; Yoshikazu Takeda; Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Thin Solid Films, 04 Dec. 1998, Peer-reviewed

  
• Optical properties of aluminumquinoline-oxadiazole codeposited luminescent layers

  M Asano; T Nakazawa; K Ueda; S Fujita; S Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Nov. 1998, Peer-reviewed

  
• Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)

  Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Journal of Applied Physics, 01 Aug. 1998, Peer-reviewed

  
• Deep states in nitrogen-doped p-ZnSe

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Journal of Applied Physics, 01 Mar. 1998, Peer-reviewed

  
• Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

  Jun Suda; Masahiro Ogawa; Keiichiro Sakurai; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1998

  
• Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures

  Shigeo Yamaguchi; Hitoshi Kurusu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Superlattices and Microstructures, 1998

  
• Growth of p-type Zn(S)Se layers by MOVPE

  Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1998

  
• New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique

  Hyun-Chul Ko; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1998

  
• Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs (110) surface

  Hyun Chul Ko; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Applied Surface Science, 1998, Peer-reviewed

  
• Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface

  Hyun-Chul Ko; Doo-Cheol Park; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita; Yang-Soo Kim

  Applied Physics Letters, 1998, Peer-reviewed

  
• Recombination dynamics of localized excitons in self-formed InGaN quantum dots

  Yoichi Kawakami; Yukio Narukawa; Ken Sawada; Shin Saijyo; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura

  Materials Science and Engineering B, 18 Dec. 1997, Peer-reviewed

  
• Tunable band offsets in ZnSe/GaAs heterovalent heterostructures grown by metalorganic vapor phase epitaxy

  Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Journal of Applied Physics, 15 Sep. 1997, Peer-reviewed

  
• Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski-Krastanow growth mode

  Hyun-Chul Ko; Doo-Cheol Park; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Applied Physics Letters, 16 Jun. 1997, Peer-reviewed

  
• Self-aligning phenomena of ZnCdSe islands grown by molecular beam epitaxy on GaAs(110) surface cleaved in ultra high vacuum

  Hyun-Chul Ko; Doo-Cheol Park; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Applied Surface Science, 02 Jun. 1997, Peer-reviewed

  
• Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

  Yukio Narukawa; Yoichi Kawakami; Mitsuru Funato; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura

  Applied Physics Letters, 24 Feb. 1997, Peer-reviewed

  
• Cleaved edge overgrowth of ZnSe on GaAs (110) by molecular beam epitaxy

  Hyun-Chul Ko; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of the Korean Physical Society, 1997

  
• Excitonic properties in InGaN/GaN MQW structures

  Yoichi Kawakami; Yukio Narukawa; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura

  Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, 1997

  
• Effect of cleaving environment on the growth of ZnSe on the GaAs (1 1 0) surface by molecular beam epitaxy

  Hyun-Chul Ko; Doo-Cheol Park; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita; Chai-Ok Kim

  Journal of Materials Science Letters, 1997

  
• Surface reconstruction and morphology of hydrogen sulfide treated GaAs (001) substrate

  Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Materials Research Society Symposium - Proceedings, 1997

  
• Surface Treatment of Indium-Tin-Oxide Substrates and Its Effects on Initial Nucleation Processes of Diamine Films.

  Fujita Shizuo; Sakamoto Takeshi; Ueda Kentaro; Ohta Kazuki; Fujita Shigeo

  Japanese Journal of Applied Physics, 1997

  
• Chapter 2 Growth and Characterization of ZnSe-based II-VI Semiconductors by MOVPE

  Shizuo Fujita; Shigeo Fujita

  Semiconductors and Semimetals, 1997, Peer-reviewed

  
• Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth

  Jun Suda; Ryuji Tokutome; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1997, Peer-reviewed

  
• Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer

  Yoichi Kawakami; Zhi Gang Peng; Yukio Narukawa; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura

  Applied Physics Letters, 02 Sep. 1996, Peer-reviewed

  
• Effects of high excitation on localized excitons in cubic ZnCdS lattice matched to GaAs

  Yoichi Kawakami; Mitsuru Funato; Shizuo Fujita; Shigeo Fujita; Yoichi Yamada; Tomobumi Mishina; Yasuaki Masumoto

  Journal of Crystal Growth, Feb. 1996

  
• Time-resolved luminescence spectroscopy of recombination dynamics in a ZnSSe doping superlattice

  Yoichi Kawakami; Toshikazu Onishi; Shigeo Yamaguchi; Hitoshi Kurusu; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1996

  
• Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

  Jiuyao Tang; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Proceedings of SPIE - The International Society for Optical Engineering, 1996

  
• (2*6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation.

  Suda Jun; Kawakami Yoichi; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 1996

  
• Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

  Jun Suda; Masanori Tsuka; Daisuke Honda; Mitsuru Funato; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of Electronic Materials, 1996, Peer-reviewed

  
• Effects of GaAs buffer layer and lattice-matching on deep levels in Zn(S)Se/GaAs heterostructures

  Mitsuru Funato; Hiroaki Kitani; Shizuo Fujita; Shigeo Fujita

  Journal of Electronic Materials, 1996, Peer-reviewed

  
• MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors

  Shizuo Fujita; Yoichi Kawakami; Shigeo Fujita

  Journal of Crystal Growth, 1996, Peer-reviewed

  
• MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Bulletin of Materials Science, Aug. 1995, Peer-reviewed

  
• Recombination dynamics in znxcd1-xs single quantum well grown by photoassisted metalorganic vapour phase epitaxy by time-resolved photoluminescence spectroscopy

  Hervé Dumont; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1995, Peer-reviewed

  
• Growth of ZnSe/ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillation

  Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1995, Peer-reviewed

  
• Photoassisted growth of II-VI semiconductor films

  Shizuo Fujita; Shigeo Fujita

  Applied Surface Science, 1995, Peer-reviewed

  
• Photo-assisted growth and characterization of ZnxCd1-xS by MOVPE

  Hervé Dumont; Shizuo Fujita; Shigeo Fujita

  Applied Surface Science, 1995, Peer-reviewed

  
• Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

  Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 02 Dec. 1994, Peer-reviewed

  
• Metalorganic vapor phase epitaxial growth of GaAs on ZnSe; on the flow sequence of source precursors at the interface

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 02 Dec. 1994, Peer-reviewed

  
• Photocatalytic surface reactions in metalorganic vapor-phase epitaxy

  Shizuo Fujita; Shigeo Fujita

  Applied Surface Science, 02 May 1994, Peer-reviewed

  
• Growth behavior of gaas in metalorganic vapor phase epitaxy onto znse

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1994, Peer-reviewed

  
• Optical properties of ZnSe/ZnMgSSe single quantum wells grown by metalorganic molecular beam epitaxy

  Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1994, Peer-reviewed

  
• Gas-source molecular beam epitaxial growth of (zn, mg)(s, se) using bis-methylcyclopentadienyl-magnesium and hydrogen sulfide

  Jun Suda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1994, Peer-reviewed

  
• Photopumped lasing properties in ZnCdSe-ZnSSe multiple quantum wells" (共著)

  YAMAGUCHI S; SHINZATO T; ICHINO K; KAWAKAMI Y; FUJITA S; FUJITA S

  Journal of Luminescence, 1994

  
• Fabrication of II-VI semiconductor quantum well structures in ZnCdSSe alloy systems

  Shizuo Fujita; Yoichi Kawakami; Shigeo Fujita

  Physica B: Physics of Condensed Matter, 01 Sep. 1993, Peer-reviewed

  
• COMPOSITION CONTROL BY PHOTOIRRADIATION IN MOVPE OF ZNCDSE AND ZNCDS ALLOY LAYERS AND MULTILAYERED STRUCTURES

  S FUJITA; S MATSUMOTO; S FUJITA

  JOURNAL OF ELECTRONIC MATERIALS, May 1993, Peer-reviewed

  
• Growth and characterization of strained-layer quantum wells with wide gap zncdsse alloy system

  Kunio Ichino; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1993, Peer-reviewed

  
• Near-UV electroluminescence from a zncdsse/znsse metal-insulator- semiconductor diode on gap grown by molecular beam epitaxy

  Kunio Ichino; Toshikazu Onishi; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1993, Peer-reviewed

  
• Structural analysis of znse-gaas quantum wells

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1993, Peer-reviewed

  
• Photoluminescence excitation spectroscopy of the lasing transition in zn0.85cd0.15se-zns0.08se0.92 multiple quantum wells

  Yoichi Kawakami; Brian C. Cavenett; Kunio Ichino; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1993, Peer-reviewed

  
• Carrier injection characteristics in diamine/znse organic-inorganic thin-film heterostructures for blue electroluminescence

  Shizuo Fujita; Tomoyuki Yoshie; Kazumasa Kohama; Yoichi Kawakami; Shigeo Fujita

  Japanese Journal of Applied Physics, 1993, Peer-reviewed

  
• ON THE INTERFACE PROPERTIES AND DEEP-LEVEL DEFECTS IN TA2O5 GROWN ON SI BY PLASMA-ENHANCED LIQUID SOURCE-CVD

  PA MURAWALA; M SAWAI; T TATSUTA; O TSUJI; S FUJITA; S FUJITA

  MATERIALS RELIABILITY IN MICROELECTRONICS III, 1993, Peer-reviewed

  
• STRUCTURAL AND ELECTRICAL-PROPERTIES OF TA2O5 GROWN BY THE PLASMA-ENHANCED LIQUID SOURCE CVD USING PENTA-ETHOXY TANTALUM SOURCE

  PA MURAWALA; M SAWAI; T TATSUTA; O TSUJI; S FUJITA; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jan. 1993, Peer-reviewed

  
• Photo-assisted metalorganic vapor phase epitaxial growth of wide-gap II-VI semiconductors

  Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 02 Feb. 1992, Peer-reviewed

  
• Metalorganic vapor phase epitaxial growth and characterization of ZnSe-GaAs multilayered structures

  Mitsuru Funato; Masahiro Ishii; Prakash A. Murawala; Osamu Tsuji; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 02 Feb. 1992, Peer-reviewed

  
• Optical properties of ZnCdSe/ZnSSe strained-layer quantum wells

  Yi-Hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1992, Peer-reviewed

  
• Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures

  Yi-hong Wu; Kunio Ichino; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1992, Peer-reviewed

  
• Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substrates

  Shizuo Fujita; Yi-Hong Wu; Yoichi Kawakami; Shigeo Fujita

  Journal of Applied Physics, 1992, Peer-reviewed

  
• Investigation of photo-induced surface reactions by mass analysis in OMVPE of II-VI semiconductors

  Shizuo Fujita; Shin-ya Hirata; Shigeo Fujita

  Journal of Crystal Growth, 02 Dec. 1991, Peer-reviewed

  
• EFFECT OF ANNEALING AND SULFUR PASSIVATION OF GAAS SURFACE IN ZNSE/GAAS HETEROSTRUCTURE

  PA MURAWALA; O TSUJI; S FUJITA; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Dec. 1991, Peer-reviewed

  
• Growth and characterization of ZnSe on (NH4) 2Sx-treated GaAs substrates: effect of GaAs surface microstructure on the growth rate of ZnSe

  Yi-hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 02 May 1991, Peer-reviewed

  
• OPTICALLY PUMPED BLUE-GREEN LASER OPERATION ABOVE ROOM-TEMPERATURE IN ZN0.80CD0.20SE-ZNS0.08SE0.92 MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

  Y KAWAKAMI; S YAMAGUCHI; YH WU; K ICHINO; S FUJITA; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Apr. 1991, Peer-reviewed

  
• ANNEALING BEHAVIOR OF GAAS ZNSE MULTILAYERED HETEROSTRUCTURES GROWN BY OMVPE

  PA MURAWALA; M FUNATO; O TSUJI; S FUJITA; S FUJITA

  HETEROEPITAXY OF DISSIMILAR MATERIALS, 1991, Peer-reviewed

  
• Metalorganic molecular beam epitaxy of zni−ᵡcdᵡsϒse1-ϒ quaternary alloys on gaas substrate

  Kunio Ichino; Yi-Hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1991, Peer-reviewed

  
• On the properties of znse/(Nh4)2sx-pretreated gaas heterointerfaces

  Takahiro Ohnakado; Yi-Hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1991, Peer-reviewed

  
• Growth and optical properties of novel wide-band-gap strained-layer single quantum wells: Zn1-ycdyse/znsxse1-x

  Yi-Hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1991, Peer-reviewed

  
• Growth of short-period znse-znsxse1-x strained-layer superlattices by metalorganic molecular beam epitaxy

  Yi-Hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1991, Peer-reviewed

  
• Observation of photoinduced alkyl group elimination from precursors in organometallic vapor-phase epitaxy of zn-based ii-vi semiconductors

  Shizuo Fujita; Shin-Ya Hirata; Shigeo Fujita

  Japanese Journal of Applied Physics, 1991, Peer-reviewed

  
• Surface photochemical reactions for alkyl group elimination from precursors in OMVPE

  Shizuo Fujita; Seiji Maruo; Hiromu Ishio; Prakash A. Murawala; Shigeo Fujita

  Journal of Crystal Growth, 01 Jan. 1991, Peer-reviewed

  
• Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE

  Yoichi Kawakami; Takashi Toyoda; Yi-Hong Wu; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 01 Jan. 1991, Peer-reviewed

  
• ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS/ZN(S,SE) MULTILAYERED STRUCTURES

  S FUJITA; PA MURAWALA; S MARUO; O TSUJI; S FUJITA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Jan. 1991, Peer-reviewed

  
• Photo-assisted OMVPE growth of II-VI semiconductors

  Shizuo Fujita; Shigeo Fujita

  Optoelectronics Tokyo, Jun. 1990

  
• Surface reconstruction and stabilization in MOMBE of ZnSe revealed by in-situ RHEED monitoring

  Shizuo Fujita; Naomichi Yoshimura; Yi-Hong Wu; Shigeo Fujita

  Journal of Crystal Growth, 01 Apr. 1990, Peer-reviewed

  
• Effects of Sulfur-Passivation Pretreatment of GaAs Substrates on MOMBE Growth of ZnSe

  Yoichi Kawakami; Yi-Hong Wu; Yasunori Miyazaki; Takashi Toyoda; Shizuo Fujita; Shigeo Fujita

  Shinku, 1990, Peer-reviewed

  
• Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System

  Yoichi Kawakami; Takashi Toyoda; Yi-hong Wu; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1990, Peer-reviewed

  
• Energy band-gap calculations of short-period (ZnTe)m(ZnSe) n and (ZnS)m(ZnSe)n strained-layer superlattices

  Yi-Hong Wu; Shizuo Fujita; Shigeo Fujita

  Journal of Applied Physics, 1990, Peer-reviewed

  
• Effects of (NH4)2Sx-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE

  Yi-hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1990, Peer-reviewed

  
• Atomic layer epitaxy of zns on gaas substrates by metalorganic molecular beam epitaxy

  Yi-Hong Wu; Takashi Toyoda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1990, Peer-reviewed

  
• Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2SxSolution

  Yi-hong Wu; Takashi Toyoda; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1990, Peer-reviewed

  
• OBSERVATION AND CHARACTERIZATION OF DEEP DONOR CENTERS (DX CENTERS) IN SI-DOPED ALAS

  M KASU; S FUJITA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, Oct. 1989, Peer-reviewed

  
• Cubic ZnCdS lattice-matched to GaAs: A novel material for short-wavelength optoelectronic applications

  Shizuo Fujita; Mitsuru Funato; Shigeo Hayashi; Shigeo Fujita

  Japanese Journal of Applied Physics, 1989, Peer-reviewed

  
• PROPERTIES OF FLUORINATED SILICON-NITRIDE FILMS FOR APPLICATIONS TO DEVICE PROCESSES

  S FUJITA; A SASAKI

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Oct. 1988, Peer-reviewed

  
• BONDING CONFIGURATION OF FLUORINE IN FLUORINATED SILICON-NITRIDE FILMS

  S FUJITA; H TOYOSHIMA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, Oct. 1988, Peer-reviewed

  
• Gas-phase and surface reactions in xenon lamp-assisted organometallic vapor-phase epitaxy of ZnSe

  Shizuo Fujita; Fumiyo Y. Takeuchi; Shigeo Fujita

  Japanese Journal of Applied Physics, 1988, Peer-reviewed

  
• DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS

  S FUJITA; A SASAKI

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, Peer-reviewed

  
• BLUE LUMINESCENCE OF A ZNSE-ZNS0.1SE0.9 STRAINED-LAYER SUPERLATTICE ON A GAAS SUBSTRATE GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

  S FUJITA; Y MATSUDA; A SASAKI

  APPLIED PHYSICS LETTERS, 1985, Peer-reviewed

  
• ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PLASMA-DEPOSITED FROM SIF4, N2, AND H2 SOURCE GASES

  S FUJITA; T OHISHI; H TOYOSHIMA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, 1985, Peer-reviewed

  
• PLASMA-DEPOSITED SILICON-NITRIDE FILMS FROM SIF2 AS SILICON SOURCE

  S FUJITA; H TOYOSHIMA; T OHISHI; A SASAKI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, Peer-reviewed

  
• PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF FLUORINATED SILICON-NITRIDE

  S FUJITA; H TOYOSHIMA; T OHISHI; A SASAKI

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, Peer-reviewed

  
• DEFECT STATES AND DONORS IN THERMALLY ANNEALED OR POST-HYDROGENATED CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SINX ALLOY

  G SASAKI; S FUJITA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, 1983, Peer-reviewed

  
• DEEP TRAPS IN METAL-INSULATOR CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SINX DIODES

  G SASAKI; S FUJITA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, 1983, Peer-reviewed

  
• THERMAL NITRIDATION OF SILICON IN NITROGEN PLASMA

  H NAKAMURA; M KANEKO; S MATSUMOTO; S FUJITA; A SASAKI

  APPLIED PHYSICS LETTERS, 1983, Peer-reviewed

  
• GAP-STATES MEASUREMENT OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON - HIGH-FREQUENCY CAPACITANCE-VOLTAGE METHOD

  G SASAKI; S FUJITA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, 1982, Peer-reviewed

  
• DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE

  S FUJITA; M NISHIHARA; WL HOI; A SASAKI

  JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, Peer-reviewed

  
• Bandgap engineering of spinel-structured oxide semiconductor alloys

  Yuichi Ota; Kentaro Kaneko; Takeyoshi Onuma; Shizuo Fujita

  Journal of Physics D: Applied Physics, 28 Jun. 2024, Peer-reviewed

  
• Corrigendum: “Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of α-phase” [Jpn. J. Appl. Phys. 60, 055501 (2021)]

  Hitoshi Takane; Kentaro Kaneko; Yuichi Ota; Shizuo Fujita

  Japanese Journal of Applied Physics, 01 Sep. 2022, Peer-reviewed

  
• Properties of Ga2O3-based (InxGa1-x)2O3alloy thin films grown by molecular beam epitaxy

  Takayoshi Oshima; Shizuo Fujita

  physica status solidi (c), Jul. 2008, Peer-reviewed

  
• Monolayer scale analysis of ZnSe/GaAs heterointerface structures by X-ray CTR scattering and interference

  Y. Takeda; K. Fujita; M. Tabuchi; M. Funato; S. Aoki; Sz. Fujita; Sg. Fujita

  Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, 1997

  
• Realization of cathodoluminescence in the 180 nm spectral range by suppressing thermal stress in mist chemical vapor deposition of rocksalt-structured MgZnO films

  Kotaro Ogawa; Wataru Kosaka; Hiroya Kusaka; Kanta Kudo; Soichiro Ohno; Izumi Serizawa; Yuichi Ota; Tomohiro Yamaguchi; Tohru Honda; Kentaro Kaneko; Shizuo Fujita; Takeyoshi Onuma

  Japanese Journal of Applied Physics, 04 Jan. 2024, Peer-reviewed

  
• Electrical characterization of MOVPE-grown p-type GaN:Mg against annealing temperature

  Shizuo Fujita; Mitsuru Funato; Doo-Cheol Park; Yoshifumi Ikenaga; Shigeo Fujita

  Materials Research Society Symposium - Proceedings, 1999

  
• Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE

  Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

  Materials Research Society Symposium - Proceedings, 1997

  
• Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

  Takeyoshi Onuma; Kanta Kudo; Mizuki Ono; Wataru Kosaka; Kohei Shima; Kyohei Ishii; Kentaro Kaneko; Yuichi Ota; Tomohiro Yamaguchi; Kazunobu Kojima; Shizuo Fujita; Shigefusa F. Chichibu; Tohru Honda

  Journal of Applied Physics, 13 Jul. 2023

  
• Natural band alignment of MgO1−xSx alloys

  Yuichi Ota; Kentaro Kaneko; Takeyoshi Onuma; Shizuo Fujita

  AIP Advances, 01 May 2023

  
• Identification of free and bound exciton emission of MgO single crystal in vacuum ultraviolet spectral range

  Takeyoshi Onuma; Wataru Kosaka; Kanta Kudo; Yuichi Ota; Tomohiro Yamaguchi; Kentaro Kaneko; Shizuo Fujita; Tohru Honda

  Applied Physics Letters, 27 Sep. 2021, Peer-reviewed

  
• Mutually Synchronized Macroscopic Josephson Oscillations Demonstrated by Polarization Analysis of Superconducting Terahertz Emitters

  M. Tsujimoto; S. Fujita; G. Kuwano; K. Maeda; A. Elarabi; J. Hawecker; J. Tignon; J. Mangeney; S. S. Dhillon; I. Kakeya

  Physical Review Applied, May 2020, Peer-reviewed

  
• Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001)

  M Funato; S Fujita; S Fujita

  PHYSICAL REVIEW B, Apr. 2001, Peer-reviewed

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• A cause of the crystalline orientation in hexagonal GaN grown on AIAs/GaAs(001)

  A Hamaguchi; M Funato; T Ishido; S Fujita; S Fujita

  PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, Peer-reviewed

  
• MOVPE growth of high quality cubic GaN on GaAs: The role of growth rates

  M Funato; M Ogawa; T Ishido; S Fujita; S Fujita

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Nov. 1999, Peer-reviewed

  
• Initial growth behavior of GaAs on ZnSe in MOVPE

  M Funato; S Aoki; S Fujita; S Fujita

  JOURNAL OF CRYSTAL GROWTH, Jan. 1997, Peer-reviewed

  
• FABRICATION OF SHORT-PERIOD ZNSE-GAAS SUPERLATTICES BY MOVPE

  M FUNATO; S FUJITA; S FUJITA

  SEMICONDUCTOR HETEROSTRUCTURES FOR PHOTONIC AND ELECTRONIC APPLICATIONS, 1993, Peer-reviewed

  
• ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF CUBIC ZNCDS LATTICE-MATCHED TO GAAS SUBSTRATE

  S FUJITA; S HAYASHI; M FUNATO; S FUJITA

  JOURNAL OF CRYSTAL GROWTH, Jan. 1990, Peer-reviewed

  
• Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of alpha-phase

  Hitoshi Takane; Kentaro Kaneko; Yuichi Ota; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, May 2021, Peer-reviewed

  
• Analysis of Deep Traps in Mist Chemical Vapor Deposition-Grown n-Type alpha-Ga2O3 by Photocapacitance Method

  Hitoshi Takane; Kentaro Kaneko; Takashi Shinohe; Shizuo Fujita

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, May 2021, Peer-reviewed

  
• Thermal stability of α-(Al x Ga1–x )2O3 films grown on c-plane sapphire substrates with an Al composition up to 90%

  Riena Jinno; Kentaro Kaneko; Shizuo Fujita

  Japanese Journal of Applied Physics, 01 May 2021

  
• Ultra-wide bandgap corundum-structured p-type alpha-(Ir,Ga)(2)O-3 alloys for alpha-Ga2O3 electronics

  Kentaro Kaneko; Yasuhisa Masuda; Shin-ichi Kan; Isao Takahashi; Yuji Kato; Takashi Shinohe; Shizuo Fujita

  APPLIED PHYSICS LETTERS, Mar. 2021, Peer-reviewed

  
• Thermal stability of alpha-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

  Riena Jinno; Kentaro Kaneko; Shizuo Fujita

  AIP ADVANCES, Nov. 2020, Peer-reviewed

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• ミストCVD法 (特集 ガラスに適用可能なコーティング技術とその機能)

  藤田 静雄

  New glass, Jul. 2020, Peer-reviewed

  
• Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films (vol 125, 225108, 2019)

  M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma

  JOURNAL OF APPLIED PHYSICS, Feb. 2020, Peer-reviewed

  
• バッファ層導入によるサファイア基板上α-Ga₂O₃薄膜の高品質化

  金子 健太郎; 伊藤 義人; 藤田 静雄

  材料, 2020, Peer-reviewed

  
• Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition of ?-Ga2O3 by using a-plane sapphire substrate

  Riena Jinno; Nobuhiro Yoshimura; Kentaro Kaneko; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2019, Peer-reviewed

  
• Towards Oxide Electronics: a Roadmap

  M. Coll; J. Fontcuberta; M. Althammer; M. Bibes; H. Boschker; A. Calleja; G. Cheng; M. Cuoco; R. Dittmann; B. Dkhil; I El Baggari; M. Fanciulli; I Fina; E. Fortunato; C. Frontera; S. Fujita; V Garcia; S. T; B. Goennenwein; C-G Granqvist; J. Grollier; R. Gross; A. Hagfeldt; G. Herranz; K. Hono; E. Houwman; M. Huijben; A. Kalaboukhov; D. J. Keeble; G. Koster; L. F. Kourkoutis; J. Levy; M. Lira-Cantu; J. L. MacManus-Driscoll; Jochen Mannhart; R. Martins; S. Menzel; T. Mikolajick; M. Napari; M. D. Nguyen; G. Niklasson; C. Paillard; S. Panigrahi; G. Rijnders; F. Sanchez; P. Sanchis; S. Sanna; D. G. Schlom; U. Schroeder; K. M. Shen; A. Siemon; M. Spreitzer; H. Sukegawa; R. Tamayo; J. van den Brink; N. Pryds; F. Miletto Granozio

  APPLIED SURFACE SCIENCE, Jul. 2019, Peer-reviewed

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• Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films

  M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma

  JOURNAL OF APPLIED PHYSICS, Jun. 2019, Peer-reviewed

  
• Pure deep-ultraviolet cathodoluminescence from rocksalt-structured MgZnO grown with carbon-free precursors

  Kyohei Ishii; Mizuki Ono; Kentaro Kaneko; Takeyoshi Onuma; Tohru Honda; Shizuo Fujita

  APPLIED PHYSICS EXPRESS, May 2019, Peer-reviewed

  
• Study on fabrication of conductive antimony doped tin oxide thin films (SnOx:Sb) by 3rd generation mist chemical vapor deposition

  Li Liu; Toshiyuki Kawaharamura; Giang Thai Dang; Ellawala K. C. Pradeep; Shota Sato; Takayuki Uchida; Shizuo Fujita; Takahiro Hiramatsu; Hiroshi Kobayashi; Hiroyuki Orita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2019, Peer-reviewed

  
• Epitaxial lateral overgrowth of alpha-Ga2O3 by halide vapor phase epitaxy

  Y. Oshima; K. Kawara; T. Shinohe; T. Hitora; M. Kasu; S. Fujita

  APL MATERIALS, Feb. 2019, Peer-reviewed

  
• 準安定相(非平衡)酸化物の作製と物性

  金子 健太郎; 藤田 静雄

  材料, 2019, Peer-reviewed

  
• Electrical properties of alpha-Ir2O3/alpha-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

  Shin-ichi Kan; Shu Takemoto; Kentaro Kaneko; Isao Takahashi; Masahiro Sugimoto; Takashi Shinohe; Shizuo Fujita

  APPLIED PHYSICS LETTERS, Nov. 2018, Peer-reviewed

  
• Tin oxide coating by nonvacuum-based mist chemical vapor deposition on stainless steel separators for polymer electrolyte fuel cells

  Kentaro Kaneko; Masafumi Ono; Takashi Tanaka; Takayuki Uchida; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2018, Peer-reviewed

  
• Deep-Ultraviolet Luminescence of Rocksalt-Structured MgxZn1−xO (x > 0.5) Films on MgO Substrates

  Kentaro Kaneko; Keiichi Tsumura; Kyohei Ishii; Takayoshi Onuma; Tohru Honda; Shizuo Fujita

  Journal of Electronic Materials, 25 Apr. 2018, Peer-reviewed

  
• Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1-xO alloys on bandgap and deep UV cathodoluminescence peak energies

  T. Onuma; M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda

  APPLIED PHYSICS LETTERS, Aug. 2018, Peer-reviewed

  
• Evaluation of band alignment of ?-Ga2O3/?-(AlxGa1%x)2O3 heterostructures by X-ray photoelectron spectroscopy

  Takayuki Uchida; Riena Jinno; Shu Takemoto; Kentaro Kaneko; Shizuo Fujita

  Japanese Journal of Applied Physics, 01 Apr. 2018, Peer-reviewed

  
• Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of α-(AlxGa1−x)2O3 Buffer Layer

  Riena Jinno; Takayuki Uchida; Kentaro Kaneko; Shizuo Fujita

  Physica Status Solidi (B) Basic Research, 01 Apr. 2018, Peer-reviewed

  
• A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

  Kentaro Kaneko; Shizuo Fujita; Toshimi Hitora

  Japanese Journal of Applied Physics, 01 Feb. 2018, Peer-reviewed

  
• Electrical characterization of Si-doped n-type α-Ga2O3 on sapphire substrates

  Takayuki Uchida; Kentaro Kaneko; Shizuo Fujita

  MRS Advances, 2018, Peer-reviewed

  
• Study on corundum-structured p-type iridium oxide thin films and band alignment at iridium oxide/gallium oxide hetero-junction

  Shin-ichi Kan; Shu Takemoto; Kentaro Kaneko; Takashi Shinohe; Shizuo Fujita

  2018 IEEE CPMT SYMPOSIUM JAPAN (ICSJ), 2018, Peer-reviewed

  
• Unpredicted surface termination of alpha-Fe2O3(0001) film grown by mist chemical vapor deposition

  Shun Osaka; Osamu Kubo; Kazuki Takahashi; Masaya Oda; Kentaro Kaneko; Hiroshi Tabata; Shizuo Fujita; Mitsuhiro Katayama

  SURFACE SCIENCE, Jun. 2017, Peer-reviewed

  
• Carrier confinement observed at modulation-doped beta-(AlxGa1-x)(2)O-3/Ga2O3 heterojunction interface

  Takayoshi Oshima; Yuji Kato; Naoto Kawano; Akito Kuramata; Shigenobu Yamakoshi; Shizuo Fujita; Toshiyuki Oishi; Makoto Kasu

  APPLIED PHYSICS EXPRESS, Mar. 2017, Peer-reviewed

  
• 酸化ガリウム系ヘテロ接合界面におけるキャリア閉じ込めの観察 (電子デバイス研究会 次世代化合物半導体デバイスの機能と応用)

  大島 孝仁; 加藤 勇次; 河野 直士; 大石 敏之; 嘉数 誠; 倉又 朗人; 山腰 茂伸; 藤田 静雄

  電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, Jan. 2017

  
• 非真空下における高機能薄膜形成技術 ミストデポジション法 : 霧の力で安全・低コスト・高度な制御を実現する

  藤田 静雄

  Fine ceramics report, Jan. 2017

  
• 酸化物半導体パワーデバイスの研究開発動向 : 酸化物の特徴を活かした低コスト・高性能のデバイスを目指して

  藤田 静雄

  電気評論, Jan. 2017

  
• Light emitting diodes for medical applications: Role for satisfied sleep

  Masahiro Ogasawara; Takashi Hirao; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 01 Sep. 2017, Peer-reviewed

  
• Metal separator of fuel cells coated with highly conductive and highly corrosion-resistant oxide thin films

  Kentaro Kaneko; Ryosuke Takagi; Takashi Tanaka; Toshimi Hitora; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 01 Sep. 2017, Peer-reviewed

  
• Ga₂O₃ Crystal for Power Device

  HITORA Toshimi; KANEKO Kentaro; FUJITA Shizuo

  The Journal of the Institute of Electrical Engineers of Japan, Jan. 2017, Peer-reviewed

  
• Corundum-Structured α-In2O3 as a Wide-Bandgap Semiconductor for Electrical Devices

  Kentaro Kaneko; Masashi Kitajima; Shizuo Fujita

  MRS Advances, 2017, Peer-reviewed

  
• 酸化物半導体パワーデバイスの研究開発動向 : 酸化物の特徴を活かした低コスト・高性能のデバイスを目指して (特集 半導体パワーデバイスの研究開発と利用の動向)

  藤田 静雄

  電気評論, Jan. 2017

  
• Corundum-strructured alpha-Ga2O3-based alloys for future power device applications

  Kentaro Kaneko; Masaya Oda; Toshimi Hitora; Shizuo Fujita

  2017 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP), 2017, Peer-reviewed

  
• Crack-free thick (similar to 5 mu m) alpha-Ga2O3 films on sapphire substrates with alpha-(Al,Ga)(2)O-3 buffer layers

  Masaya Oda; Kentaro Kaneko; Shizuo Fujita; Toshimi Hitora

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2016, Peer-reviewed

  
• Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition

  Sam-dong Lee; Kentaro Kaneko; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2016, Peer-reviewed

  
• Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

  Shizuo Fujita; Masaya Oda; Kentaro Kaneko; Toshimi Hitora

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2016, Peer-reviewed

  
• Conductivity control of Sn-doped alpha-Ga2O3 thin films grown on sapphire substrates

  Kazuaki Akaiwa; Kentaro Kaneko; Kunio Ichino; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2016, Peer-reviewed

  
• Gallium Oxide and Related Semiconductors FOREWORD

  Shizuo Fujita; Makoto Kasu; Masataka Higashiwaki; Yoshinao Kumagai; Takeyoshi Onuma; Takayoshi Oshima; Kazuyuki Uno

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2016, Peer-reviewed

  
• Growth of rocksalt-structured MgxZn1-xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence

  Kentaro Kaneko; Takeyoshi Onuma; Keiichi Tsumura; Takayuki Uchida; Riena Jinno; Tomohiro Yamaguchi; Tohru Honda; Shizuo Fujita

  APPLIED PHYSICS EXPRESS, Nov. 2016, Peer-reviewed

  
• Reduction in edge dislocation density in corundum-structured alpha-Ga2O3 layers on sapphire substrates with quasi-graded alpha-(Al,Ga)(2)O-3 buffer layers

  Riena Jinno; Takayuki Uchida; Kentaro Kaneko; Shizuo Fujita

  APPLIED PHYSICS EXPRESS, Jul. 2016, Peer-reviewed

  
• Electrical, optical, and magnetic properties of Sn doped alpha-Ga2O3 thin films

  E. Chikoidze; H. J. von Bardeleben; K. Akaiwa; E. Shigematsu; K. Kaneko; S. Fujita; Y. Dumont

  JOURNAL OF APPLIED PHYSICS, Jul. 2016, Peer-reviewed

  
• Surface termination structure of alpha-Ga2O3 film grown by mist chemical vapor deposition

  Daiki Tamba; Osamu Kubo; Masaya Oda; Shun Osaka; Kazuki Takahashi; Hiroshi Tabata; Kentaro Kaneko; Shizuo Fujita; Mitsuhiro Katayama

  APPLIED PHYSICS LETTERS, Jun. 2016, Peer-reviewed

  
• Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films

  Giang T. Dang; Takayuki Uchida; Toshiyuki Kawaharamura; Mamoru Furuta; Adam R. Hyndman; Rodrigo Martinez; Shizuo Fujita; Roger J. Reeves; Martin W. Allen

  APPLIED PHYSICS EXPRESS, Apr. 2016, Peer-reviewed

  
• Growth characteristics of corundum-structured alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures on sapphire substrates

  Kentaro Kaneko; Kenta Suzuki; Yoshito Ito; Shizuo Fujita

  JOURNAL OF CRYSTAL GROWTH, Feb. 2016, Peer-reviewed

  
• コランダム構造n型およびp型ワイドギャップ酸化物半導体の結晶成長と応用 (電子デバイス)

  金子 健太郎; 人羅 俊実; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2016

  
• sapphire基板上へのコランダム構造酸化ガリウムの成長と電気特性制御 (レーザ・量子エレクトロニクス)

  赤岩 和明; 市野 邦男; 金子 健太郎; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2016

  
• Growth of corundum-structured wide band-gap semiconductors with n-type or p-type conductions and their device applications

  金子 健太郎; 人羅 俊実; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2016

  
• sapphire基板上へのコランダム構造酸化ガリウムの成長と電気特性制御 (電子部品・材料)

  赤岩 和明; 市野 邦男; 金子 健太郎; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2016

  
• Crystal growth and device applications of corundum-structured gallium oxide

  Kentaro Kaneko; Masaya Oda; Akio Takatsuka; Toshimi Hitora; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 01 Sep. 2016, Peer-reviewed

  
• コランダム構造n型およびp型ワイドギャップ酸化物半導体の結晶成長と応用 (レーザ・量子エレクトロニクス)

  金子 健太郎; 人羅 俊実; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2016

  
• Growth and Conductivity Control of Corundum-Structured Gallium Oxides on Sapphire Substrates

  赤岩 和明; 市野 邦男; 金子 健太郎; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2016

  
• Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide

  金子 健太郎; 織田 真也; 高塚 章夫; 人羅 俊実; 藤田 静雄

  材料, Jan. 2016, Peer-reviewed

  
• Characterization of band offset in alpha-(AlxGa1-x)(2)O-3 heterostructures

  Takayuki Uchida; Riena Jinno; Shu Takemoto; Kentaro Kaneko; Shizuo Fujita

  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, Peer-reviewed

  
• Fabrication of alpha-Ga2O3 Thin Films Using alpha-(AlxGa1-x)(2)O-3 Buffer Layers and its Crystal Structure Properties

  Riena Jinno; Takayuki Uchida; Kentaro Kaneko; Shizuo Fujita

  2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, Peer-reviewed

  
• Evolution of Oxide Semiconductors for Novel Functional Device Applications

  Shizuo Fujita

  2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2016, Peer-reviewed

  
• Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

  Takahiro Shirahata; Toshiyuki Kawaharamura; Shizuo Fujita; Hiroyuki Orita

  THIN SOLID FILMS, Dec. 2015, Peer-reviewed

  
• Growth and metal-oxide-semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors

  Kentaro Kaneko; Yoshito Ito; Takayuki Uchida; Shizuo Fujita

  APPLIED PHYSICS EXPRESS, Sep. 2015, Peer-reviewed

  
• Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping

  Sam-Dong Lee; Yoshito Ito; Kentaro Kaneko; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2015, Peer-reviewed

  
• Wide-bandgap semiconductor materials: For their full bloom

  Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2015, Peer-reviewed

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• Room temperature ferromagnetism in conducting alpha-(In1-xFex)(2)O-3 alloy films

  K. Akaiwa; K. Kaneko; S. Fujita; E. Chikoidze; Y. Dumont

  APPLIED PHYSICS LETTERS, Feb. 2015, Peer-reviewed

  
• ワイドバンドギャップ半導体発光デバイスの進展 (赤﨑・天野・中村博士のノーベル物理学賞受賞に際して)

  藤田 静雄

  学術の動向 : SCJフォーラム = Trends in the sciences : SCJ Forum, Jan. 2015

  
• Development of narrow band LED sources and their application to dermatology

  Masahiro Ogasawara; Takashi Hirao; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 01 May 2015, Peer-reviewed

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• Fabrication of Cu2ZnSnS4 thin films by ultrasonic-atomized mist methods

  Kenji Shibayama; Kentaro Kaneko; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, 01 May 2015, Peer-reviewed

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• Evolution of Wide Band Gap Semiconductor Light Emitting Devices

  藤田 静雄

  学術の動向, Jan. 2015

  
• コランダム構造酸化物半導体の成長とMOSFET試作 (電子デバイス)

  伊藤 義人; 金子 健太郎; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2015

  
• コランダム構造酸化物半導体の成長とMOSFET試作 (電子部品・材料)

  伊藤 義人; 金子 健太郎; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2015

  
• Growth and preliminary MOSFETs of corundum-structured oxide semiconductors

  伊藤 義人; 金子 健太郎; 藤田 静雄

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, Jan. 2015

  
• Growth of corundum-structured (InxGa1-x)(2)O-3 alloy thin films on sapphire substrates with buffer layers

  Norihiro Suzuki; Kentaro Kaneko; Shizuo Fujita

  JOURNAL OF CRYSTAL GROWTH, Sep. 2014, Peer-reviewed

  
• Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films

  Shizuo Fujita; Kentaro Kaneko

  JOURNAL OF CRYSTAL GROWTH, Sep. 2014, Peer-reviewed

  
• Epitaxial growth and superconducting anisotropy of PbSr2 Y1-x Cax Cu2 O7+δ thin films

  S. Komori; R. Inaba; K. Kaneko; S. Fujita; I. Kakeya; M. Suzuki

  Physical Review B - Condensed Matter and Materials Physics, 13 May 2014, Peer-reviewed

  
• Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Mist CVD in Open-Air Atmosphere

  Toshiyuki Kawaharamura; Takayuki Uchida; Kenji Shibayama; Shizuo Fujita; Takahiro Hiramatsu; Hiroyuki Orita

  MRS Proceedings, Apr. 2014

  
• Mist chemical vapor deposition of aluminum oxide thin films for rear surface passivation of crystalline silicon solar cells

  Takayuki Uchida; Toshiyuki Kawaharamura; Kenji Shibayama; Takahiro Hiramatsu; Hiroyuki Orita; Shizuo Fujita

  APPLIED PHYSICS EXPRESS, Feb. 2014, Peer-reviewed

  
• 超狭帯域LED光源の開発とその皮膚医学応用(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料)及びその他)

  小笠原 正弘; 平尾 孝; 藤田 静雄

  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, Jan. 2014

  
• 7aBD-9 Epitaxial growth and superconducting anisotropy of PbSr_2Y_<1-x>Ca_xCu_2O_<7+δ> thin films

  Komori S.; Inaba R.; Kaneko K.; Fujita S.; Kakya I.; Suzuki M.

  Meeting abstracts of the Physical Society of Japan, Jan. 2014

  
• 物理学賞 青色光に魅せられた研究者たち : 信念が実を結んだ青色発光ダイオードとその波及効果 (2014年ノーベル賞を読み解く)

  藤田 静雄

  化学 = Chemistry, Jan. 2014

  
• Ultrasonic-assisted mist chemical vapor deposition of II-oxide and related oxide compounds

  Shizuo Fujita; Kentaro Kaneko; Takumi Ikenoue; Toshiyuki Kawaharamura; Mamoru Furuta

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8, 2014, Peer-reviewed

  
• Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3

  Kentaro Kaneko; Itsuhiro Kakeya; Sachio Komori; Shizuo Fujita

  Journal of Applied Physics, 21 Jun. 2013, Peer-reviewed

  
• Formation of Semi-Insulating Layers on Semiconducting beta-Ga2O3 Single Crystals by Thermal Oxidation

  Takayoshi Oshima; Kenichi Kaminaga; Akira Mukai; Kohei Sasaki; Takekazu Masui; Akito Kuramata; Shigenobu Yamakoshi; Shizuo Fujita; Akira Ohtomo

  JAPANESE JOURNAL OF APPLIED PHYSICS, May 2013, Peer-reviewed

  
• Effect of O-3 and Aqueous Ammonia on Crystallization of MgO Thin Film Grown by Mist Chemical Vapor Deposition

  Toshiyuki Kawaharamura; Kazuharu Mori; Hiroyuki Orita; Takahiro Shirahata; Shizuo Fujita; Takashi Hirao

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2013, Peer-reviewed

  
• Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers

  Norihiro Suzuki; Kentaro Kaneko; Shizuo Fujita

  JOURNAL OF CRYSTAL GROWTH, Feb. 2013, Peer-reviewed

  
• Fabrication of Corundum-Structured α-(InFe)2O3 Alloy Films on Sapphire Substrates by Inserting α-Fe2O3 Buffer Layer

  Kazuaki Akaiwa; Norihiro Suzuki; Kentaro Kaneko; Shizuo Fujita

  MRS Proceedings, Feb. 2013, Peer-reviewed

  
• Crystal Structure of Non-Doped and Sn-Doped α-(GaFe)2O3 Thin Films.

  Kentaro Kaneko; Kazuaki Akaiwa; Shizuo Fujita

  MRS Proceedings, Jan. 2013, Peer-reviewed

  
• Oriented growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates

  Kentaro Kaneko; Hiroshi Ito; Sam-Dong Lee; Shizuo Fujita

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 2013, Peer-reviewed

  
• Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates

  Sam-Dong Lee; Kazuaki Akaiwa; Shizuo Fujita

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 2013, Peer-reviewed

  
• Trap densities in ZnO TFTs with SiNx / SiOx stacked gate insulators fabricated using several N2O Flow Rate during SiOx deposition

  M. Kimura; T. Matsuda; M. Furuta; T. Hiramatsu; H. Furuta; C. Li; T. Hirao; Y. Kamada; S. Fujita

  ECS Transactions, 2013, Peer-reviewed

  
• Growth and Band Gap Control of Corundum-Structured alpha-(AlGa)(2)O-3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

  Hiroshi Ito; Kentaro Kaneko; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Oct. 2012, Peer-reviewed

  
• Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as Sources

  Jinchun Piao; Shigetaka Katori; Toshiyuki Kawaharamura; Chaoyang Li; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2012, Peer-reviewed

  
• Solution-based ultrasonic mist deposition method for the formation of transparent conductive thin oxide films and organic polymer solar cells

  Takumi Ikenoue; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, Sep. 2012, Peer-reviewed

  
• Electrical Conductive Corundum-Structured alpha-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition

  Kazuaki Akaiwa; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2012, Peer-reviewed

  
• Formation of aluminum tris (8-hydroxyquinoline) solution in methanol and fabrication of thin films by ultrasonic spray-assisted vapor deposition

  Jinchun Piao; Shigetaka Katori; Takumi Ikenoue; Shizuo Fujita

  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jul. 2012, Peer-reviewed

  
• Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation

  Shin-ichi Shimakawa; Yudai Kamada; Toshiyuki Kawaharamura; Dapeng Wang; Chaoyang Li; Shizuo Fujita; Takashi Hirao; Mamoru Furuta

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2012, Peer-reviewed

  
• Evaluation of Misfit Relaxation in alpha-Ga2O3 Epitaxial Growth on alpha-Al2O3 Substrate

  Kentaro Kaneko; Hitoshi Kawanowa; Hiroshi Ito; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2012, Peer-reviewed

  
• Fabrication of conducting poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) thin films by ultrasonic spray-assisted mist deposition method

  Takumi Ikenoue; Hiroyuki Nishinaka; Shizuo Fujita

  THIN SOLID FILMS, Jan. 2012, Peer-reviewed

  
• 半導体エレクトロニクス特集号の発刊によせて

  藤田 静雄

  材料, Jan. 2012

  
• <高校生のページ>太陽光発電のいま、そしてこれから

  藤田 静雄

  Cue : 京都大学電気関係教室技術情報誌, Jan. 2012

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• Thin Film Fabrication of Oxide Semiconductor by Ultrasonic Spray-Assisted Mist CVD Method toward Thin Film Solar Cells

  IKENOUE Takumi; FUJITA Shizuo; SAKAMOTO Shinichi; INUI Yoshitaka

  電気学会研究会資料. FTE, 新エネルギー・環境研究会, Jan. 2012

  
• 超音波噴霧法による透明導電膜および有機薄膜太陽電池の作製

  池之上 卓己; 藤田 静雄

  材料, Jan. 2012, Peer-reviewed

  
• Structural design of flexible electric devices on polymer substrates and application to organic FET

  Shigetaka Katori; Shizuo Fujita; Kazumi Matsushige

  Zairyo/Journal of the Society of Materials Science, Japan, Sep. 2012, Peer-reviewed

  
• ミストデポジション法による薄膜形成 (極める薄膜形成技術)

  藤田 静雄

  コンバーテック, Jan. 2012

  
• Influence of annealing under reducing ambient on properties of ZnO thin films prepared by mist CVD

  T. Kawaharamura; H. Orita; T. Shirahata; A. Yoshida; S. Fujita; T. Hirao

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, Peer-reviewed

  
• Study on oxygen source and its effect on film properties of ZnO deposited by radio frequency magnetron sputtering

  Yudai Kamada; Mamoru Furuta; Takahiro Hiramatsu; Toshiyuki Kawaharamura; Dapeng Wang; Shin-ichi Shimakawa; Chaoyang Li; Shizuo Fujita; Takashi Hirao

  APPLIED SURFACE SCIENCE, Nov. 2011, Peer-reviewed

  
• Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation

  Mamoru Furuta; Yudai Kamada; Mutsumi Kimura; Shin-ichi Shimakawa; Toshiyuki Kawaharamura; Dapeng Wang; Chaoyang Li; Shizuo Fujita; Takashi Hirao

  JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2011, Peer-reviewed

  
• Extraction of trap densities in ZnO thin-film transistors and dependence on oxygen partial pressure during sputtering of ZnO films

  Mutsumi Kimura; Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao

  IEEE Transactions on Electron Devices, Sep. 2011, Peer-reviewed

  
• Surface Potential Measurement of Tris(8-hydroxyquinolinato)aluminum and Bis[N-(1-naphthyl)-N-phenyl]benzidine Thin Films Fabricated on Indium-Tin Oxide by Kelvin Probe Force Microscopy

  Shigetaka Katori; Nobuo Satoh; Masayuki Yahiro; Kei Kobayashi; Hirofumi Yamada; Kazumi Matsushige; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2011, Peer-reviewed

  
• ZnO Thin-Film Transistors with SiN_x/SiO_x Stacked Gate Insulators: Trap Densities and N₂O Flow Rate Dependence

  Mutsumi Kimura; Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao

  Electrochemical and Solid-State Letters, Jun. 2011, Peer-reviewed

  
• Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With Dual-Gate Structure

  Yudai Kamada; Shizuo Fujita; Mutsumi Kimura; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao

  IEEE ELECTRON DEVICE LETTERS, Apr. 2011, Peer-reviewed

  
• Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors

  Yudai Kamada; Shizuo Fujita; Mutsumi Kimura; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao

  APPLIED PHYSICS LETTERS, Mar. 2011, Peer-reviewed

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• Ultrasonic Spray-Assisted Solution-Based Vapor-Deposition of Aluminum Tris(8-hydroxyquinoline) Thin Films

  Jinchun Piao; Shigetaka Katori; Takumi Ikenoue; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2011, Peer-reviewed

  
• Fabrication of PEDOT:PSS/ZnMgO Schottky-type ultraviolet sensors on glass substrates with solution-based mist deposition technique and hard-mask patterning

  Takumi Ikenoue; Naoki Kameyama; Shizuo Fujita

  Physica Status Solidi (C) Current Topics in Solid State Physics, Feb. 2011, Peer-reviewed

  
• Fabrication of lithium-based oxide thin films by ultrasonic-assisted mist CVD technique

  Takuto Igawa; Kentaro Kaneko; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, Nov. 2011, Peer-reviewed

  
• エレワザ×エレザイ(FILE 10)ミストを利用した薄膜成長技術および加工技術の開発

  川原村 敏幸; 平尾 孝; 藤田 静雄

  コンバーテック, Jan. 2011

  
• ミストデポジション法による酸化マグネシウム(MgO)薄膜作製 : 大気圧下、低温成長への挑戦(発光型/非発光型ディスプレイ合同研究会)

  川原村 敏幸; 織田 容征; 白幡 孝洋; 井川 拓人; 伊藤 大師; 吉田 章男; 藤田 静雄; 平尾 孝

  映像情報メディア学会技術報告, Jan. 2011

  
• Bias-Temperature Instability in Zin Oxide Thin-Film Transistors

  FURUTA Mamoru; HIRAMATSU Takahiro; MATSUDA Tokiyoshi; HIRAO Takashi; KAMADA Yudai; FUJITA Sizuo

  IEICE technical report, Jan. 2011

  
• Fundamental Properties and Optical Device Applications of ZnO

  FUJITA Shizuo

  rle, Jan. 2011

  
• Growth of Magnesium Oxide (MgO) Thin Film with Mist Deposition : Challenge of low temperature growth under the atmospheric pressure

  KAWAHARAMURA Toshiyuki; ORITA Hiroyuki; SHIRAHATA Takahiro; IGAWA Takuto; ITO Hiroshi; YOSHIDA Akio; FUJITA Shizuo; HIRAO Takashi

  電気学会研究会資料. EDD, 電子デバイス研究会, Jan. 2011

  
• Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

  Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Chaoyang Li; Mutsumi Kimura; Shizuo Fujita; Takashi Hirao

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2011, Peer-reviewed

  
• Growth of SnO2 crystalline thin films by mist chemical vapour deposition method

  Takeya Okuno; Takayoshi Oshima; Sam-Dong Lee; Shizuo Fujita

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, Peer-reviewed

  
• ZnO thin-film transistors with SiNx/SiOx stacked gate insulators: Trap densities and N2O flow rate dependence

  Mutsumi Kimura; Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao

  Electrochemical and Solid-State Letters, 2011, Peer-reviewed

  
• Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation

  Yudai Kamada; Shizuo Fujita; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao

  SOLID-STATE ELECTRONICS, Nov. 2010, Peer-reviewed

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• Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures

  Mamoru Furuta; Yudai Kamada; Mutsumi Kimura; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao

  IEEE ELECTRON DEVICE LETTERS, Nov. 2010, Peer-reviewed

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• Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation

  Mutsumi Kimura; Yudai Kamada; Shizuo Fujita; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao

  APPLIED PHYSICS LETTERS, Oct. 2010, Peer-reviewed

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• Application of Organoboron Polymer to Multi Layered Two-Photon Absorption Optical Memory

  Shigetaka Katori; Takumi Ikenoue; Katsuhiko Hirabayashi; Hirohisa Kanbara; Takashi Kurihara; Shizuo Fujita

  Journal of the Society of Materials Science, Japan, 18 Sep. 2010, Peer-reviewed

  
• Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique

  Hiroyuki Nishinaka; Yudai Kamada; Naoki Kameyama; Shizuo Fujita

  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jun. 2010, Peer-reviewed

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• Fabrication by mMist CVD method and evaluation of corundum structured oxide semiconductor thin films

  Kentaro Kaneko; Taichi Nomura; Yutaka Fukui; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, Sep. 2010, Peer-reviewed

  
• Application of organoboron polymer to multi layered two-photon absorption optical memory

  Shigetaka Katori; Takumi Ikenoue; Katsuhiko Hirabayashi; Hirohisa Kanbara; Takashi Kurihara; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, Sep. 2010, Peer-reviewed

  
• Step-flow homoepitaxial growth of zinc oxide semiconductor thin films with a vapor-growth method

  Hiroyuki Nishinaka; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, Sep. 2010, Peer-reviewed

  
• Corundum-structured alpha-phase Ga2O3-Cr2O3-Fe2O3 alloy system for novel functions

  Kentaro Kaneko; Taichi Nomura; Shizuo Fujita

  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, Peer-reviewed

  
• Photo-Leakage Current of Zinc Oxide Thin-Film Transistors

  Yudai Kamada; Shizuo Fujita; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Nitta; Mamoru Furuta; Takashi Hirao

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, Peer-reviewed

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• Epitaxial ZnO Thin Films on a-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition

  Hiroyuki Nishinaka; Yudai Kamada; Naoki Kameyama; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2009, Peer-reviewed

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• UV-B Sensor Based on a SnO2 Thin Film

  Takayoshi Oshima; Takeya Okuno; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Dec. 2009, Peer-reviewed

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• Fabrication of highly crystalline corundum-structured α-(Ga 1-xFex)2O3alloy thin films on sapphire substrates

  Kentaro Kaneko; Taichi Nomura; Itsuhiro Kakeya; Shizuo Fujita

  Applied Physics Express, Jul. 2009, Peer-reviewed

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• beta-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy

  Takayoshi Oshima; Takeya Okuno; Naoki Arai; Yasushi Kobayashi; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2009, Peer-reviewed

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• Wet Etching of beta-Ga2O3 Substrates

  Takayoshi Oshima; Takeya Okuno; Naoki Arai; Yasushi Kobayashi; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2009, Peer-reviewed

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• Flame Detection by a beta-Ga2O3-Based Sensor

  Takayoshi Oshima; Takeya Okuno; Naoki Arai; Norihito Suzuki; Harumichi Hino; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2009, Peer-reviewed

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• Growth of ZnO Nanostructures by Using Ultrasonic Spray Chemical Vapor Deposition with a Au Catalyst

  Hiroyuki Nishinaka; Toshiyuki Kawaharamura; Shizuo Fujita

  JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Nov. 2008, Peer-reviewed

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• Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

  Toshiyuki Kawaharamura; Hiroyuki Nishinaka; Yudai Kamaka; Yoshio Masuda; Jian-Guo Lu; Shizuo Fujita

  JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Nov. 2008, Peer-reviewed

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• Enhancement of electron mobility in ZnO layers with applying ultrasonic spray-assisted MOVPE and buffer layers

  Yudai Kamada; Hiroyuki Nishinaka; Naoki Kameyama; Shizuo Fujita

  JOURNAL OF CRYSTAL GROWTH, Nov. 2008, Peer-reviewed

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• Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE

  Hiroyuki Nishinaka; Shizuo Fujita

  JOURNAL OF CRYSTAL GROWTH, Nov. 2008, Peer-reviewed

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• Atomically controlled surfaces with step and terrace of beta-Ga(2)O(3) single crystal substrates for thin film growth

  Shigeo Ohira; Naoki Arai; Takayoshi Oshima; Shizuo Fujita

  APPLIED SURFACE SCIENCE, Sep. 2008, Peer-reviewed

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• Heteroepitaxy of corundum-structured alpha-Ga2O3 thin films on alpha-Al2O3 substrates by ultrasonic mist chemical vapor deposition

  Daisuke Shinohara; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2008, Peer-reviewed

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• Non-Linear Optical Effects in Au Nanoparticle-Deposited ZnO Nanocrystalline Films

  Katarzyna Ozga; Toshiyuki Kawaharamura; Akrajas Ali Umar; Munetaka Oyama; Andrzej Slezak; Shizuo Fujita; Ivan Kityk

  JOURNAL OF NANO RESEARCH, Aug. 2008, Peer-reviewed

  
• Catalyst-free synthesis of ZnO nanorods on metal substrates by using thermal chemical vapor deposition

  Seung-Sik Park; Jin-Moo Lee; Sung-Jin Kim; Sang-Woo Kim; Hyun Hwi Lee; Sang-Hyeob Kim; Shizuo Fujita

  JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Jul. 2008, Peer-reviewed

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• Surface morphology of homoepitaxial beta-Ga2O3 thin films grown by molecular beam epitaxy

  Takayoshi Oshima; Naoki Arai; Norihito Suzuki; Shigeo Ohira; Shizuo Fujita

  THIN SOLID FILMS, Jul. 2008, Peer-reviewed

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• ZnO nanotips and nanorods on carbon nanotube/Si substrates: anomalous p-type like optical properties of undoped ZnO nanotips

  Seung-Sik Park; Jin-Moo Lee; Sung-Jin Kim; Sang-Woo Kim; Min-Su Yi; Sang-Hyeob Kim; Sunglyul Maeng; Shizuo Fujita

  NANOTECHNOLOGY, Jun. 2008, Peer-reviewed

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• Growth of crystalline zinc oxide thin films by fine-channel-mist chemical vapor deposition

  Toshiyuki Kawaharamura; Hiroyuki Nishinaka; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2008, Peer-reviewed

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• Density functional theory study on beta-hydride elimination as thermal decomposition process of diethylzinc

  Keigou Maejima; Hiroshi Kawabata; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2008, Peer-reviewed

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• Vertical solar-blind deep-ultraviolet schottky photodetectors based on beta-Ga2O3 substrates

  Takayoshi Oshima; Takeya Okuno; Naoki Arai; Norihito Suzuki; Shigeo Ohira; Shizuo Fujita

  APPLIED PHYSICS EXPRESS, Jan. 2008, Peer-reviewed

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• An approach for single crystalline zinc oxide thin films with fine channel mist chemical vapor deposition method

  Toshiyuki Kawaharamura; Shizuo Fujita

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, Peer-reviewed

  
• Properties of Ga2O3-based (InxGa1-x)O-3 alloy thin films grown by molecular beam epitaxy

  Takayoshi Oshima; Shizuo Fujita

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, Peer-reviewed

  
• Quantum chemical study on interactions of diethylzinc with nitrous oxide and water for ZnO growth by metal-organic vapor phase epitaxy

  Keigou Maejima; Hiroshi Kawabata; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Dec. 2007

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• Route from ZnO thin films to nanostructures on Si substrates by metal organic chemical vapor deposition

  Sang-Woo Kim; Han-Ki Kim; Soon-Wook Jeong; Shizuo Fujita; Kyoung-Kook Kim

  JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Dec. 2007

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• Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors

  Takayoshi Oshima; Takeya Okuno; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Nov. 2007

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• Low-temperature growth of ZnO thin films by linear source ultrasonic spray chemical vapor deposition

  Hiroyuki Nishinaka; Toshiyuki Kawaharamura; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Oct. 2007

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• Improved p-type conductivity and acceptor states in N-doped ZnO thin films

  Jianguo Lu; Qunian Liang; Yinzhu Zhang; Zhizhen Ye; Shizuo Fujita

  JOURNAL OF PHYSICS D-APPLIED PHYSICS, May 2007

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• Carrier concentration dependence of band gap shift in n-type ZnO : Al films

  J. G. Lu; S. Fujita; T. Kawaharamura; H. Nishinaka; Y. Kamada; T. Ohshima; Z. Z. Ye; Y. J. Zeng; Y. Z. Zhang; L. P. Zhu; H. P. He; B. H. Zhao

  JOURNAL OF APPLIED PHYSICS, Apr. 2007, Peer-reviewed

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• ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition

  J. G. Lu; T. Kawaharamura; H. Nishinaka; Y. Kamada; T. Ohshima; S. Fujita

  JOURNAL OF CRYSTAL GROWTH, Feb. 2007, Peer-reviewed

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• Crystal growth of ZnO on Si(111) by metalorganic vapor phase epitaxy

  Takumi Moriyama; Shizuo Fujita

  JOURNAL OF CRYSTAL GROWTH, Jan. 2007

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• Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films

  J. G. Lu; S. Fujita; T. Kawaharamura; H. Nishinaka; Y. Kamada; T. Ohshima

  APPLIED PHYSICS LETTERS, Dec. 2006, Peer-reviewed

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• (111)-Oriented Zn3N2 growth on a-plane sapphire substrates by molecular beam epitaxy

  Takayoshi Oshima; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Nov. 2006

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• Linear source ultrasonic spray chemical vapor deposition method for fabrication of ZnMgO films and ultraviolet photodetectors (vol 45, pg L857, 2006)

  Yudai Kamada; Tshiyuki Kawaharamura; Hiroyuki Nishinaka; Shizuo Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Oct. 2006

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• Growth of ZnO nanostructures in a chemical vapor deposition process

  Sang-Woo Kim; Shizuo Fujita; Hyun-Kyu Park; Beelyong Yang; Han-Ki Kim; Dae Ho Yoon

  JOURNAL OF CRYSTAL GROWTH, Jul. 2006

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• Catalyst-free synthesis of ZnO nanowall networks on Si3N4/Si substrates by metalorganic chemical vapor deposition

  Sang-Woo Kim; Shizuo Fujita; Min-Su Yi; Dae Ho Yoon

  APPLIED PHYSICS LETTERS, Jun. 2006

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• Artificial control of ZnO nanodots by ion-beam nanopatterning

  SW Kim; M Ueda; M Funato; S Fujita; S Fujita

  JOURNAL OF APPLIED PHYSICS, May 2005

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• Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

  K Nishizuka; M Funato; Y Kawakami; S Fujita; Y Narukawa; T Mukai

  APPLIED PHYSICS LETTERS, Oct. 2004

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• Optically pumped lasing and gain formation properties in blue InxGa1-xN MQWs

  K Kojima; A Shikanai; K Omae; M Funato; Y Kawakami; Y Narukawa; T Mukai; S Fujita

  PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Oct. 2004, Peer-reviewed

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• Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

  A Sasaki; K Nishizuka; T Wang; S Sakai; A Kaneta; Y Kawakami; S Fujita

  SOLID STATE COMMUNICATIONS, Jan. 2004

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• The hot carrier dynamics in InGaN multi-quantum well structure

  A Shikanai; K Kojima; K Omae; Y Kawakami; Y Narukawa; T Mukai; S Fujita

  PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Nov. 2003, Peer-reviewed

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• Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

  A Kaneta; T Mutoh; Y Kawakami; S Fujita; G Marutsuki; Y Narukawa; T Mukai

  APPLIED PHYSICS LETTERS, Oct. 2003

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• Growth of ZnO Nanorods on A-Plane ($11\bar{2}0$) Sapphire by Metal-Organic Vapor Phase Epitaxy

  Maejima Keigou; Ueda Masaya; Fujita Shizuo; Fujita Shigeo

  Jpn J Appl Phys, 15 May 2003

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• Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001)

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Physical Review B - Condensed Matter and Materials Physics, 04 Apr. 2001

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• Radiative and nonradiative recombination processes in GaN-based semiconductors

  Y. Kawakami; K. Omae; A. Kaneta; K. Okamoto; T. Izumi; S. Saijou; K. Inoue; Y. Narukawa; T. Mukai; Sg Fujita

  Physica Status Solidi (A) Applied Research, Jan. 2001

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• Integration of GaN with Si using a AuGe-mediated wafer bonding technique

  M Funato; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Dec. 2000

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• Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes

  Y Kawakami; Y Narukawa; K Omae; S Fujita; S Nakamura

  APPLIED PHYSICS LETTERS, Oct. 2000

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• Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures

  M Funato; S Fujita; S Fujita

  JOURNAL OF CRYSTAL GROWTH, Jun. 2000

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• Effect of degree of localization and confinement dimensionality of excitons on their recombination process in CdSe/ZnSe/ZnSxSe1-x single quantum well structures

  S Yamaguchi; H Kurusu; Y Kawakami; S Fujita; S Fujita

  PHYSICAL REVIEW B, Apr. 2000

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• Dimensionality of excitons in InGaN-based light emitting devices

  Y. Kawakami; Y. Narukawa; K. Omae; Sg Fujita; S. Nakamura

  Physica Status Solidi (A) Applied Research, Mar. 2000

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• Six-bilayer periodic structures in GaN grown on GaAs(001)

  M Funato; T Ishido; S Fujita; S Fujita

  APPLIED PHYSICS LETTERS, Jan. 2000

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• Energy states in ZnSe-GaAs heterovalent quantum structures

  M Funato; S Fujita; S Fujita

  PHYSICAL REVIEW B, Dec. 1999

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• Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method.

  Park Doo–Cheol; Ko Hyun–Chul; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 1998

  
• 5a-E-2 Many-body effects of excitons in GaN quantum dots

  Tanaka,S; Nomura,S; Riblet,P; Ramvall,P; Aoyagi,Y; Narukawa,Y; Kawakami,Y; Fujita,Sz; Fujita,Sg

  Meeting abstracts of the Physical Society of Japan, Sep. 1997

  
• Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy

  Funato Mitsuru; Aoki Satoshi; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 1997

  
• Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy.

  Ko Hyun–Chul; Yamaguchi Shigeo; Kurusu Hitoshi; Kawakami Yoichi; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 1996

  
• TIME-RESOLVED NONLINEAR LUMINESCENCE OF BIEXCITONS IN ZNSE-ZNXMG1-XSYSE1-Y SINGLE QUANTUM-WELLS

  Y YAMADA; T MISHINA; Y MASUMOTO; Y KAWAKAMI; J SUDA; S FUJITA; S FUJITA

  PHYSICAL REVIEW B, Jul. 1995, Peer-reviewed

  
• Time-resolved spectroscopy of excitonic luminescence in cubic ZnCdS lattice matched to GaAs

  Y. Kawakami; M. Funato; Sz. Fujita; Sg. Fujita; Y. Yamada; Y. Masumoto

  Proceedings of the 22nd International Conference on the Physics of Semiconductors, 1995

  
• LOCALIZED EXCITONS IN CUBIC ZN1-XCDXS LATTICE-MATCHED TO GAAS

  Y KAWAKAMI; M FUNATO; S FUJITA; S FUJITA; Y YAMADA; Y MASUMOTO

  PHYSICAL REVIEW B, Nov. 1994, Peer-reviewed

  
• GROWTH OF ZNS AND ZNCDSSE ALLOYS ON GAP USING AN ELEMENTAL SULFUR SOURCE BY MOLECULAR-BEAM EPITAXY

  K ICHINO; T ONISI; Y KAWAKAMI; S FUJITA; S FUJITA

  JOURNAL OF CRYSTAL GROWTH, Apr. 1994

  
• ULTRAVIOLET SEMICONDUCTOR-LASER STRUCTURES WITH PSEUDOMORPHIC ZNCDSSE QUATERNARY ALLOYS ON GAP SUBSTRATES

  K ICHINO; K IWAMI; Y KAWAKAMI; SZ FUJITA; SG FUJITA

  JOURNAL OF ELECTRONIC MATERIALS, May 1993

  
• OBSERVATION OF PHONON-PLASMON COUPLED MODES AT THE INTERFACE BETWEEN ZNSE AND SEMIINSULATING GAAS BY MICRO-RAMAN SPECTROSCOPY

  M ICHIMURA; A USAMI; T WADA; S FUJITA; S FUJITA

  APPLIED PHYSICS LETTERS, Apr. 1993, Peer-reviewed

  
• Stabilization of Li acceptors in ZnSe by above-band-gap photoirradiation

  Masaya Ichimura; Takao Wada; Shizuo Fujita; Shigeo Fujita

  Journal of Applied Physics, 1993, Peer-reviewed

  
• Reduction of Compensating Defects in ZnSe and ZnS by Photo-Irradiation

  M. Ichimura; T. Wada; Sz. Fujita; Sg. Fujita

  J. Cryst. Growth, Apr. 1992, Peer-reviewed

  
• Raman spectra of cubic Zn1-xCdxS

  M. Ichimura; A. Usami; T. Wada; M. Funato; K. Ichino; Sz Fujita; Sg Fujita

  Physical Review B, 1992, Peer-reviewed

  
• Design and fabrication of II - VI semiconductor heterostructures.

  ICHINO Kunio; KAWAKAMI Yoichi; FUJITA Shizuo; FUJITA Shigeo

  OYOBUTURI, 10 Feb. 1992

  
• FABRICATION OF ZNCDSSE ALLOYS BY MOMBE AND THEIR APPLICATIONS FOR DOUBLE-HETERO AND QUANTUM-WELL STRUCTURES

  K ICHINO; YH WU; Y KAWAKAMI; S FUJITA; S FUJITA

  JOURNAL OF CRYSTAL GROWTH, Feb. 1992

  
• GROWTH OF II-VI-SEMICONDUCTOR QUANTUM-WELL STRUCTURES UNDER INSITU RHEED OBSERVATIONS

  Y WU; K ICHINO; Y KAWAKAMI; S FUJITA; S FUJITA

  JOURNAL OF CRYSTAL GROWTH, Dec. 1991

  
• A defect model for photoirradiated semiconductors —suppression of the self-compensation in ii-vi materials—

  Masaya Ichimura; Takao Wada; Shizuo Fujita; Shigeo Fujita

  Japanese Journal of Applied Physics, 1991, Peer-reviewed

  

Misc.

• Growth of Group III Impurities Doped Rocksalt-structured MgZnO Films by Mist CVD

  松田真樹; 小川広太郎; 小川広太郎; 太田優一; 山口智広; 金子健太郎; 藤田静雄; 本田徹; 尾沼猛儀

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 2023

  
• Evaluation of the Baliga figure of merit for ultra-wide bandgap oxide alloys

  太田優一; 金子健太郎; 尾沼猛儀; 藤田静雄

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 2023

  
• Growth of In doped MgZnO Films by Mist CVD Method

  松田真樹; 小川広太郎; 小川広太郎; 太田優一; 山口智広; 金子健太郎; 藤田静雄; 本田徹; 尾沼猛儀

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2022

  
• Emission Property of In Doped MgO Films

  高坂亘; 小川広太郎; 小川広太郎; 松田真樹; 日下皓也; 太田優一; 金子健太郎; 山口智広; 本田徹; 藤田静雄; 尾沼猛儀

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2022

  
• VUV Exciton Spectra of MgO Single Crystal

  尾沼猛儀; 高坂亘; 工藤幹太; 太田優一; 山口智広; 金子健太郎; 藤田静雄; 本田徹

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2021

  
• 微小電極間電析法を用いた酸化亜鉛の作製

  服部玲子; 今本浩史; 亀谷圭介; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 2007

  
• Two-photon absorption characteristics of novel π-conjugated organic compounds

  HORIGUCHI Takahiro; FUJITA Shizuo; YAMAO Takeshi; HOTTA Shu; KANBARA Hirohisa; KURIHARA Takashi; NAKANO Hidetoshi; MORI Yuhei; OSUKA Atsuhiro; NAGATA Yuya; CHUJO Yoshiki; AKIYAMA Seiji; MAEDA Shuichi

  IEICE technical report. Component parts and materials, 23 Jun. 2006

  
• Self- and Artificial-Assembly of Semiconductor Nanostructures : Zinc Oxide Semiconductor Nanodots as an Example

  FUJITA Shizuo

  The Journal of the Surface Finishing Society of Japan, 01 Dec. 2004

  
• Vacuum deposition and luminescence dynamics of organic thin film multi-structures

  Shizuo Fujita; Shigeo Fujita

  Shinku/Journal of the Vacuum Society of Japan, 2001

  
• Effects of C_<60>-Doping on Properties of Organic Electroluminescent Thin Films

  FUJITA Shizuo; NAKAZAWA Tadahiro; HASHIMOTO Jun; UESAKA Ken-ichi; FUJITA Shigeo

  Technical report of IEICE. OME, 21 Jul. 2000

  
• Photoluminescence dynamics of aluminumquinoline/oxadiazole multilayer structures

  T Nakazawa; M Asano; S Fujita; S Fujita

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Feb. 1999

  
• A comparative study on deep levels in p-ZnSe grown by MBE, MOMBE and MOVPE

  Mitsuru Funato; Shizuo Fujita; Shigeo Fujita

  Journal of Crystal Growth, 1998

  
• Time-Resolved Spectroscopy of Biexciton Luminescence in Zn_xCd_1-xSe-ZnS_ySe_1-y Multiple Quantum Wells

  YAMADA Y; MISHINA T; MASUMOTO Y; KAWAKAMI Y; YAMAGUCHI S; ICHINO K; FUJITA S; FUJITA S; TAGUCHI T

  Phys. Rev. B, 1995

  
• Time-Resolved Spectroscopy of Biexiton Luminescence in Wide-Bandgap II-VI Quantum Wells

  YAMADA Y; MISHINA T; MASUMOTO Y; KAWAKAMI Y; YAMAGUCHI S; ICHINO K; FUJITA S; FUJITA S; TAGUCHI T

  Superlattices and Microstructures, 1994

  
• Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping Source

  Fujita Shizuo; Asano Takeharu; Maehara Kensaku; Fujita Shigeo

  Japanese Journal of Applied Physics, 1993

  
• Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C₆₀ Thin Films

  Hoshimono Katsunori; Fujimori Shigeo; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 1993

  
• FLUORINATED SILICON-NITRIDE FILMS FOR MICROELECTRONICS APPLICATIONS

  S FUJITA; A SASAKI

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Aug. 1986

  
• シリコン窒化膜の最近の研究

  藤田静雄

  応用物理, 1985

  
• FREQUENCY-DEPENDENCE OF FLAT-BAND CAPACITANCE OF METAL-INSULATOR GLOW-DISCHARGE DEPOSITED HYDROGENATED AMORPHOUS-SILICON DIODES

  G SASAKI; S FUJITA; A SASAKI

  JOURNAL OF APPLIED PHYSICS, 1984

  
• ORIGIN AND CHARACTERISTICS OF TRAP STATES IN CVD SILICON-NITRIDE

  S FUJITA; A SASAKI

  JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983

  
• TEMPERATURE-DEPENDENCE OF CHARGE-TRANSFER IN METAL-NITRIDE-SEMICONDUCTOR DIODE STRUCTURE

  M NISHIHARA; S FUJITA; A SASAKI

  JAPANESE JOURNAL OF APPLIED PHYSICS, 1981

  
• Effects of thermal annealing and characterization for p-ZnSe grown by photo-assisted MOVPE

  OGATA K.; KERA T.; KAWAGUCHI D.; FUNATO M.; FUJITA Sz.; FUJITA Sg.

  電気学会研究会資料. EFM, 電子材料研究会, 06 Dec. 1995

  
• Application of Organoboron Materials to Multilayered Optical Memory with Waveguide Structure by Two-Photon Absorption

  KATORI Shigetaka; ISHIZUKA Tomoaki; OKADA Mariko; FUJITA Shizuo; KANBARA Hirohisa; HIRABAYASHI Katsuhiko; YAGI Shougo; KURIHARA Takashi

  IEICE technical report, 16 Aug. 2007

  
• Metalorganic Molecular Beam Epitaxy of Zn_1−xCd_xS_ySe_1−y Quaternary Alloys on GaAs Substrate

  Ichino Kunio; Wu Yi-hong; Kawakami Yoichi; Fujita Shizuo; Fujita Shigeo

  Japanese Journal of Applied Physics, 1991

  
• Zn(S,Se)-GaAsヘテロエピタキシャル成長と積層構造の作製 : エピタキシーI

  船戸 充; 石井 正宏; 藤田 静雄; 藤田 茂夫

  日本結晶成長学会誌, 25 Jul. 1991

  
• Mist CVD technology for the fabrication of oxide thin films

  藤田 静雄; Nishinaka Hiroyuki; Kiba Keiji

  Annual report of Ion Beam Engineering Laboratory, University of Hyogo, 2008

  
• Hexagonal GaN on GaAs(001) Grown by MOVPE and Its Application to Formation of GaN/Si Structure by Wafer Bonding

  YAMAMOTO Shuichiro; FUNATO Mitsuru; FUJITA Shizuo; FUJITA Shigeo

  IEICE technical report. Electron devices, 12 Oct. 2000

  
• Incorporation of hexagonal GaN into cubic GaN grown by metalorganic vapor phase epitaxy

  OGAWA Masahiro; ISHIDO Teruki; FUNATO Mitsuru; FUJITA Shizuo; FUJITA Shigeo

  IEICE technical report. Electron devices, 06 Nov. 1998

  
• MOVPE growth and electrical properties of ZnSe/GaAs and GaAs/ZnSe heterovalent heterostructures

  Funato Mitsuru; Fujita Shizuo; Fujita Shigeo

  IEICE technical report. Electron devices, 17 Nov. 1994

  
• Optical Memory Devices Using Two-photon Absorption of Organoboron Polymers

  IKENOUE Takumi; KATORI Shigetaka; FUJITA Shizuo; KANBARA Hirohisa; HIRABAYASHI Katsuhiko; KURIHARA Takashi

  IEICE technical report, 12 Dec. 2008

  
• ミストCVD法で作製されたATO薄膜の電気的および光学的特性

  上田真理子; LIU Li; 佐藤翔太; DANG Giang T; 川原村敏幸; 川原村敏幸; 藤田静雄; 織田容征; 平松孝浩

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 05 Sep. 2018

  
• 高品質α‐Fe₂O₃薄膜の電気特性および磁気特性に与えるドーピング効果の影響

  内田昌志; 赤岩和明; 小森祥央; 掛谷一弘; 金子健太郎; 藤田静雄

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 31 Aug. 2015

  
• 反応支援型ミストCVD法により低温成長した酸化アルミニウム(AlO_x)薄膜のパッシベーション応用特性

  内田貴之; 川原村敏幸; 藤田静雄; 平松孝浩; 織田容征

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 26 Feb. 2015

  
• 大気開放下によるSnO薄膜の作製とその物性評価

  内田貴之; 川原村敏幸; 藤田静雄

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 01 Sep. 2014

  
• Development of Narrow Band LED Sources and Their Application to Dermatology

  OGASAWARA Masahiro; HIRAO Takashi; FUJITA Shizuo

  IEICE technical report. Component parts and materials, 28 May 2014

  
• Development of Narrow Band LED Sources and Their Application to Dermatology

  OGASAWARA Masahiro; HIRAO Takashi; FUJITA Shizuo

  IEICE technical report. Electron devices, 28 May 2014

  
• オゾン支援を用いたミストCVD法による酸化アルミニウム(AlO_x)パッシベーション膜の特性

  内田貴之; 川原村敏幸; 柴山健次; 藤田静雄; 平松孝浩; 織田容征

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 03 Mar. 2014

  
• ミストCVD法によるSnO_x薄膜の作製とその特性

  内田貴之; 川原村敏幸; 藤田静雄

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 03 Mar. 2014

  
• 大気圧ミストCVD法で作製した酸化アルミニウム(AlO_x)薄膜の太陽電池用パッシベーション応用

  内田貴之; 川原村敏幸; 柴山健次; 藤田静雄; 平松孝浩; 織田容征

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 31 Aug. 2013

  
• アモルファスα‐Fe₂O₃‐Co₂O₃薄膜の磁気特性評価

  金子健太郎; 小森祥央; 掛谷一弘; 藤田静雄; 田中勝久

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 31 Aug. 2013

  
• Pb_1-yBi_ySr₂Y_1-xCa_xCu₂O_7+δ単結晶エピタキシャル薄膜の成長と評価

  小森祥央; 稲葉遼太郎; 金子健太郎; 藤田静雄; 掛谷一弘; 鈴木実

  応用物理学会春季学術講演会講演予稿集(CD-ROM), 11 Mar. 2013

  
• Fabrication of corundum-structured α-(InFe)2O3 alloy films on sapphire substrates by inserting α-Fe2O 3 buffer layer

  Kazuaki Akaiwa; Norihiro Suzuki; Kentaro Kaneko; Shizuo Fujita

  Materials Research Society Symposium Proceedings, 2013, Peer-reviewed

  
• Crystal structure of non-doped and Sn-doped α-(GaFe) 2O3 thin films

  Kentaro Kaneko; Kazuaki Akaiwa; Shizuo Fujita

  Materials Research Society Symposium Proceedings, 2013, Peer-reviewed

  
• Fabrication of organic polymer solar cells by a novel solution-based vapor-like mist deposition method

  Takumi Ikenoue; Shizuo Fujita

  Materials Research Society Symposium Proceedings, 2012, Peer-reviewed

  
• Ultrasonic spray-assisted solution-based vapor-deposition of functional thin films and their applications

  Jinchun Piao; Shigetaka Katori; Takumi Ikenoue; Shizuo Fujita

  2011 Materials Research Society Fall Meeting, Nov. 2011, Peer-reviewed

  
• Solution-based vapor deposition of oxide and organic thin films

  Shizuo Fujita; Kentaro Kaneko; Takumi Ikenoue; Hiroshi Ito; Jinchun Piao; Sam-Dong Lee; Shigetaka Katori

  2nd International Conference on Green & Sustainable Chemistry (ICGSC 2011), Nov. 2011, Peer-reviewed, Invited

  
• Solution-source vapor-phase synthesis of oxide and organic thin films

  Shizuo Fujita; Takumi Ikenoue; Kentaro Kaneko; Hiroshi Ito; Takuto Igawa; Jinchun Piao; Sam-Dong Lee; Shigetaka Katori

  IUPAC 7th International Symposium on Novel Materials and Their Synthesis (NMS 2011), Oct. 2011, Peer-reviewed, Invited

  
• Growth, characterization, and device applications of various oxide semiconductors

  Shizuo Fujita; Kentaro Kaneko; Takayoshi Oshima; Hiroshi Ito; Takumi Ikenoue; Takuto Igawa

  15th International Conference on II-VI Compounds (II-VI 2011), Aug. 2011, Peer-reviewed, Invited

  
• Demonstration of tunable ultraviolet sensors with PEDOT:PSS/ZnMgO Schottky contacts fabricated by all mist-deposition method

  Takumi Ikenoue; Naoki Kameyama; Shizuo Fujita

  38th International Symposium on Compound Semiconductors (ISCS 2011), May 2011, Peer-reviewed

  
• ミスト法を用いた薄膜成長に関する反応メカニズムの解析 1

  川原村敏幸; 織田容征; 白幡孝洋; 吉田章男; 藤田静雄; 平尾孝

  応用物理学関係連合講演会講演予稿集(CD-ROM), 09 Mar. 2011

  
• Transparency of Zinc Oxide thin-film transistors in the visible light and its application to a signal readout circuit of stacked image sensor

  M. Furuta; T. Hirao; Y. Kamada; S. Fujita; S. Aihara; H. Seo; T. Sakai; M. Kubota

  SID Conference Record of the International Display Research Conference, 2011, Peer-reviewed

  
• Thin film formation of transparent conductive oxides by solution-based mist deposition method toward hybrid device applications

  Takumi Ikenoue; Shizuo Fujita

  Materials Research Society Symposium Proceedings, 2011, Peer-reviewed

  
• Fabrication of organic small molecular thin films based on ultrasonic spray-assisted vapor-deposition method

  Jinchun Piao; Shigetaka Katori; Takumi Ikenoue; Shizuo Fujita

  Materials Research Society Symposium Proceedings, 2011, Peer-reviewed

  
• Mist deposition technique: a novel vapor-deposition method based on solution processes for conductive polymers and organic materials toward device applications

  Takumi Ikenoue; Shizuo Fujita

  2010 International Chemical Congress of Pacific Basin Societies (2010 Pacifichem), Dec. 2010, Peer-reviewed

  
• Artificial Surface Control of Gallium Oxide Semiconductors and Growth of High Quality Single-crystalline Thin Films

  FUJITA Shizuo; OSHIMA Takayoshi; KANEKO Kentaro

  J. Surf. Sci. Soc. Jpn., Dec. 2010, Peer-reviewed

  
• Fabrication of PEDOT:PSS thin films by a novel ultrasonic spray assisted mist deposition technique

  Takumi Ikenoue; Naoki Kameyama; Shizuo Fujita

  International Conference on Science and Technology of Synthetic Metals 2010 (ICSM2010), Jul. 2010, Peer-reviewed

  
• Ultraviolet photodetectors with novel oxide thin films

  Shizuo Fujita; Takumi Ikenoue; Naoki Kameyama; Takayoshi Oshima

  52nd Electronic Materials Conference (EMC), Jun. 2010, Peer-reviewed

  
• Hard-mask patterned mist deposition of PEDOT:PSS thin films and demonstration of ultraviolet sensors with the PEDOT:PSS/ZnMgO Schottky contacts

  Takumi Ikenoue; Naoki Kameyama; Shizuo Fujita

  37th International Symposium on Compound Semiconductors (ISCS2010), May 2010, Peer-reviewed

  
• 超音波噴霧ミストデポジション法によるPEDOT/PSS薄膜の作製と評価

  池之上卓己; 藤田静雄

  応用物理学関係連合講演会講演予稿集(CD-ROM), 03 Mar. 2010

  
• スパッタリング法で成膜したZnO薄膜の光学特性とTFT応用

  鎌田雄大; 藤田静雄; 川原村敏幸; 平松孝浩; 松田時宜; 古田守; 平尾孝

  応用物理学関係連合講演会講演予稿集(CD-ROM), 03 Mar. 2010

  
• Lithographyless mist deposition of PEDOT:PSS thin films and demonstration of UV sensors with Schottky contacts

  Takumi Ikenoue; Naoki Kameyama; Shizuo Fujita

  3rd GCOE International Symposium on Photonics and Electronics Science and Engineering, Mar. 2010

  
• 非真空気相プロセスによる有機太陽電池作製に向けた検討

  池之上卓己; 李在衡; 佐川尚; 増田喜男; 吉川暹; 藤田静雄

  2010年秋季第71回応用物理学会学術講演会，長﨑大学文教キャンパス，2010.9.14-17, 2010, Peer-reviewed

  
• Solution- and non-vacuum-based vapor deposition methods for oxides and organic materials

  T. Ikenoue; N. Kameyama; S. Fujita

  Proceedings of International Meeting on Information Display, 2010, Peer-reviewed

  
• Role of film properties in sub-threshold characteristics of zinc oxide thin-film transistors (ZnO TFTs)

  Y. Kamada; S. Fujita; T. Hiramatsu; T. Matsuda; M. Furuta; T. Hirao

  Proceedings of International Meeting on Information Display, 2010, Peer-reviewed

  
• 69.1: Photo-leakage current in ZnO TFTs for transparent electronics

  Y. Kamada; S. Fujita; T. Hiramatsu; T. Matsuda; M. Furuta; T. Hirao

  Digest of Technical Papers - SID International Symposium, 2010, Peer-reviewed

  
• Mist deposition technique as a green chemical route for synthesizing oxide and organic thin films

  S. Fujita; K. Kaneko; Y. Fukui; H. Nishinaka; T. Ikenoue; T. Nomura

  Materials Research Society Symposium Proceedings, 2010, Peer-reviewed

  
• ワイドバンドギャップ酸化ガリウム半導体

  藤田静雄; 大島孝仁; 金子健太郎

  応用物理, Dec. 2009, Peer-reviewed

  
• Multi Layered Waveguide-type Optical Memory using Two-Photon Absorption of Organoboron Polymer

  KATORI Shigetaka; IKENOUE Takumi; FUJITA Shizuo; HIRABAYASHI Katsuhiko; KANBARA Hirohisa; KURIHARA Takashi

  IEICE technical report. Component parts and materials, 18 Sep. 2009

  
• Second order optical effects in Au nanoparticle-deposited ZnO nanocrystallite films

  K. Ozga; T. Kawaharamura; A. Ali Umar; M. Oyama; K. Nouneh; A. Slezak; S. Fujita; M. Piasecki; A. H. Reshak; I. V. Kityk

  NANOTECHNOLOGY, May 2008

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• Fine Channel Mist CVD法によるZnO薄膜の成長メカニズム

  川原村敏幸; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 27 Mar. 2008

  
• ミストCVD法によるsapphire基板上α‐Ga₂O₃薄膜の成長

  篠原大輔; 西中浩之; 大島考仁; 騎馬啓嗣; 鎌田雄大; 川原村敏幸; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 27 Mar. 2008

  
• Junction properties of nitrogen-doped ZnO thin films

  J. G. Lu; S. Fujita; T. Kawaharamura; H. Nishinaka; Y. Kamada

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008

  
• The Effect of Fine Channel & Collisional Mixing on Mist CVD Method

  KAWAHARAMURA Toshiyuki; NISHINAKA Hiroyuki; FUJITA Shizuo

  journal of the Japan Society for Testing Materials, 2008

  
• Investigation of instability mechanisms in zinc oxide thin-film transistors under bias stress

  M. Furuta; T. Hiramatsu; T. Matsuda; H. Nitta; T. Hirao; Y. Kamada; S. Fujita

  IDW \\'08 - Proceedings of the 15th International Display Workshops, 2008, Peer-reviewed

  
• Ultrasonic spray assisted mist-CVD method for high-quality crystalline and amorphous oxide semiconductors growth

  H. Nishinaka; Y. Kamada; K. Kiba; N. Kameyama; S. Fujita

  Materials Research Society Symposium Proceedings, 2008, Peer-reviewed

  
• Direct fabrication of ZnO whiskers bridging between micron-gap electrodes in aqueous solution for highly gas sensing

  R. Hattori; K. Kametani; H. Imamoto; S. Fujita

  Materials Research Society Symposium Proceedings, 2008, Peer-reviewed

  
• Ultraviolet optical functions of ZnO and Ga(2)O(3) thin films

  Shizuo Fujita

  NANOSTRUCTURED THIN FILMS, 2008, Peer-reviewed

  
• Fine Channel Mist CVD法による単結晶ZnO薄膜の作製(2)

  川原村敏幸; 西中浩之; 藤田静雄

  応用物理学会学術講演会講演予稿集, 04 Sep. 2007

  
• リニアソース方式超音波噴霧CVD法による低温成長ZnO薄膜の作製

  西中浩之; 川原村敏幸; 藤田静雄

  応用物理学会学術講演会講演予稿集, 04 Sep. 2007

  
• Roles of hydrogen and nitrogen in p-type doping of ZnO

  J. G. Lu; S. Fujita; T. Kawaharamura; H. Nishinaka

  CHEMICAL PHYSICS LETTERS, Jun. 2007

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• 金触媒を用いた超音波噴霧CVD法によるZnOナノ構造の成長

  西中浩之; 川原村敏幸; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 27 Mar. 2007

  
• Fine Channel Mist CVD法による単結晶ZnO薄膜の作製

  川原村敏幸; 西中浩之; 増田喜男; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 27 Mar. 2007

  
• Fabrication of ZnO and ZnMgO thin films and UV photodetectors by mist chemical vapor deposition method

  Yudai Kamada; Toshiyuki Kawaharamura; Hiroyuki Nishinaka; Shizuo Fujita

  ZINC OXIDE AND RELATED MATERIALS, 2007, Peer-reviewed

  
• ファインチャネルミストCVD法によるサファイア基板上ZnO薄膜の作製

  川原村敏幸; 西中浩之; 亀谷圭介; 増田喜男; 藤田静雄

  応用物理学会学術講演会講演予稿集, 29 Aug. 2006

  
• リニアソース方式超音波噴霧CVD法によるGaドープZnO膜の作製

  西中浩之; 川原村敏幸; 鎌田雄大; LU J; 増田善男; 藤田静雄

  応用物理学会学術講演会講演予稿集, 29 Aug. 2006

  
• ミストCVD法によるZn_1-xMg_xO薄膜の作製

  鎌田雄大; 川原村敏幸; 西中浩之; 谷垣昌敬; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 22 Mar. 2006

  
• ファインチャネルミストCVD法によるZnO透明薄膜の作製(2)

  川原村敏幸; 西中浩之; 亀谷圭介; 増田喜男; 谷垣昌敬; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 22 Mar. 2006

  
• ミストCVD法による各種金属酸化物薄膜の作製

  川原村敏幸; 西中浩之; 須磨隆富; 谷垣昌敬; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 22 Mar. 2006

  
• Fabrication and properties of ZnO thin films prepared by fine channel mist method

  Toshiyuki Kawaharamura; Hiroyuki Nishinaka; Keisuke Kametani; Yoshio Masuda; Masataka Tanigaki; Shizuo Fujita

  Zairyo/Journal of the Society of Materials Science, Japan, Feb. 2006

  
• Oligomerization process in MOVPE growth of ZnO

  K Maejima; S Fujita

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, Peer-reviewed

  
• Epitaxial growth of nonpolar ZnO by MOVPE

  T Moriyama; S Fujita

  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, Peer-reviewed

  
• ファインチャネルミストCVD法によるZnO透明薄膜の作製

  川原村敏幸; 西中浩之; 亀谷圭介; 増田喜男; 谷垣昌敬; 藤田静雄

  応用物理学会学術講演会講演予稿集, 07 Sep. 2005

  
• 「超音波噴霧熱分解(UMHD‐)CVD法」によるZnO透明薄膜の作製とその特性(2)

  川原村敏幸; 西中浩之; 亀谷圭介; 増田喜男; 谷垣昌敬; 藤田静雄

  応用物理学関係連合講演会講演予稿集, 29 Mar. 2005

  
• Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics

  T Kotani; Y Hatada; M Funato; Y Narukawa; T Mukai; Y Kawakami; S Fujita

  Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, Peer-reviewed

  
• Electrochemical polymerization of terthiophene-fullerene derivative and its optical property for organic solar cells

  M Morita; K Furukawa; Y Murata; T Yamazaki; K Komatsu; N Maruyama; T Yamao; S Fujita

  2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, 2005, Peer-reviewed

  
• 超音波噴霧熱分解(UMHD‐)CVD法によるZnO透明薄膜の作製とその特性

  川原村敏幸; 西中浩之; 亀谷圭介; 増田喜男; 谷垣昌敬; 藤田静雄

  応用物理学会学術講演会講演予稿集, 01 Sep. 2004

  
• Indium doping to GaN grown on GaAs{114}B substrates by metalorganic vapor phase epitaxy

  M Funato; K Shimogami; S Ujita; Y Kawaguchi; S Fujita; S Fujita

  INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, Peer-reviewed

  
• Self-organized ZnO nanosize islands with low-dimensional characteristics on SiO2/Si substrates by metalorganic chemical vapor deposition

  SW Kim; S Fujita; S Fujita

  THREE-DIMENSIONAL NANOENGINEERED ASSEMBLIES, 2003, Peer-reviewed

  
• Structural dependence and dynamics of white luminescence in multilayer structures for white organic light emitting devices

  S Fujita; K Uesaka; S Fujita

  ORGANIC OPTOELECTRONIC MATERIALS, PROCESSING AND DEVICES, 2002, Peer-reviewed

  
• Luminescence dynamics of Alq₃-based multilayer structures in terms of HOMO and LUMO energy discontinuity

  S. Fujita; T. Nakazawa; M. Asano; S. Fujita

  Materials Research Society Symposium - Proceedings, 2000, Peer-reviewed

  
• Effects of sapphire substrate configurations on MBE growth of ZnO

  Keiichiro Sakurai; Ken Nakahara; Tetsuhiro Tanabe; Shizuo Fujita; Shigeo Fujita

  Materials Research Society Symposium - Proceedings, 2000, Peer-reviewed

  
• Electrical characterization of MOVPE-grown P-type GaN : Mg against annealing temperature

  S Fujita; M Funato; DC Park; Y Ikenaga; S Fujita

  MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, Peer-reviewed

  
• Optical absorption in ZnSe-GaAs heterovalent quantum structures

  M Funato; S Fujita; S Fujita

  III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, Peer-reviewed

  
• Tunable band discontinuity in Zuse/GaAs heterovalent heterostructures

  FUNATO Mitsuru; FUJITA Shizuo; FUJITA Shigeo

  應用物理, 10 Feb. 1997

  
• Surface reconstruction and morphology of hydrogen sulfide treated GaAs (001) substrate

  J Suda; Y Kawakami; S Fujita; S Fujita

  CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, Peer-reviewed

  
• Formation of ZnSe/GaAs heterovalent heterostructures by MOVPE

  M Funato; S Aoki; S Fujita; S Fujita

  CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, Peer-reviewed

  
• Defect states in p-ZnSe:N grown by MOVPE

  S Fujita; K Ogata; D Kawaguchi; ZG Peng; S Fujita

  DEFECTS IN ELECTRONIC MATERIALS II, 1997, Peer-reviewed

  
• Emission mechanism of the InGaN MQW grown by MOCVD

  Y Narukawa; Y Kawakami; S Fujita; S Fujita; S Nakamura

  III-V NITRIDES, 1997, Peer-reviewed

  
• Photocurrent spectrum of p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures

  JY Tang; Y Kawakami; S Fujita; S Fujita

  ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS, 1996, Peer-reviewed

  
• GAS-SOURCE MBE OF ZNMGSSE LAYERS

  S FUJITA; J SUDA; Y KAWAKAMI; S FUJITA

  II-VI BLUE/GREEN LASER DIODES, 1994, Peer-reviewed

  
• WELL WIDTH DEPENDENCE OF STARK EFFECT IN ZNSE-ZNCDSE MULTIPLE QUANTUM WELL MODULATORS

  JY TANG; T ONISHI; H KURUSU; Y KAWAKAMI; S FUJITA; S FUJITA

  SECOND INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1994, Peer-reviewed

  
• LOW-PRESSURE MOVPE PHOTO-ASSISTED GROWTH OF ZNXCD1-XS

  H DUMONT; S FUJITA; S FUJITA

  COMPOUND SEMICONDUCTOR EPITAXY, 1994, Peer-reviewed

  
• Plasma enhanced liquid source-CVD and rapid thermal annealing of tantalum penta oxide dielectric material

  P.A. Murawala; M. Sawai; T. Tatsuta; O. Tsuji; Sz. Fujita; Sg. Fujita

  Conference on Solid State Devices and Materials, 1992, Peer-reviewed

  
• Electrical properties of ZnSe-based II-VI Semiconductors/(NH₄)₂S_x-pretreated GaAs heterointerfaces

  Takahiro Ohnakado; Yi-hong Wu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita

  Conference on Solid State Devices and Materials, 1991, Peer-reviewed

  
• Thermal stability and interdiffusion at ZnSe/GaAs interface

  P.A. Murawala; O. Tsuji; Sz. Fujita; Sg. Fujita

  Conference on Solid State Devices and Materials, 1991, Peer-reviewed

  
• Sulfur-passivation pretreatment of GaAs surface for layer-by-layer growth and atomic layer epitaxy of ZnSe by MOMBE

  Shigeo Fujita; Yi-hong Wu; Yasunori Miyazaki; Takashi Toyoda; Yoichi Kawakami; Shizuo Fujita

  Conference on Solid State Devices and Materials, 1990, Peer-reviewed

  
• Characterization of GaAs/Zn(S, Se) multi-layered structures grown by OMVPE

  Prakash A. Murawala; Seiji Maruo; Osamu Tsuji; Shizuo Fujita; Shigeo Fujita

  Conference on Solid State Devices and Materials, 1990, Peer-reviewed

  
• THERMAL NITRIDATION OF SILICON IN NITROGEN PLASMA AND NITROGEN-HYDROGEN PLASMA.

  S. Matsumoto; H. Nakamura; S. Eguchi; S. Fujita; A. Sasaki

  Materials Research Society Symposia Proceedings, 1985, Peer-reviewed

  

Books and Other Publications

• 現代工学の基礎(2)(共著)

  藤田 静雄

  岩波書店,/,49-112, 2000, Not refereed

  
• Fundamentals of modern engineering(2)(共著)

  藤田 静雄

  Iwanami Publishing,/,49-112, 2000, Not refereed

  
• Properties of wide bandgap II-VI semiconductors(共著)

  藤田 静雄

  The institution of electrical engineers,, 1997, Not refereed

  
• II-VI blue/green light emitters : device physics and epitaxial growth, semiconductors and semimetals vol. 44(共著)

  藤田 静雄

  Academic press,, 1997, Not refereed

  
• 薄膜作製応用ハンドブック(共著)

  藤田 静雄

  エヌ・ティー・エス,, 1995, Not refereed

  
• Handbook on thin film fabrication and application

  藤田 静雄

  ,, 1995, Not refereed

  

Industrial Property Rights

• 特許5652768, 特願2011-529718, 金属酸化膜の成膜方法、金属酸化膜および金属酸化膜の成膜装置

  藤田 静雄 ほか

  
• 特許5645191, 特願2011-510106, 金属酸化膜の成膜方法および金属酸化膜

  藤田 静雄 ほか

  
• 特許5621130, 特願2009-266429, ミスト噴出用ノズル、それを備えた成膜装置および成膜方法

  藤田 静雄 ほか

  
• 特許5614558, 特願2012-518167, 金属酸化膜の成膜装置、金属酸化膜の成膜方法

  藤田 静雄 ほか

  
• 特許5294432, 特願2011-510107, 酸化亜鉛バリスタの製造方法および酸化亜鉛バリスタ

  藤田 静雄 ほか

  
• 特許5124760, 特開2005-307238, 特願2004-122834, 成膜方法及び成膜装置

  藤田 静雄 ほか

  
• 特許5103683, 特願2007-301235, 酸化ガリウム基板用電極の製造方法及びそれにより製造される酸化ガリウム基板用電極

  藤田 静雄 ほか

  
• 特許4940425, 特開2007-254869, 特願2006-83679, 原料ガス噴出用ノズル及び化学的気相成膜装置

  藤田 静雄 ほか

  
• 特許4911569, 特願2006-010078, 多層導波路およびその作製方法

  藤田 静雄 ほか

  
• 特許4785363, 特願2004-268203, 蛍光体粒子、蛍光体粒子分散体ならびにこれらを含む照明装置および表示装置

  藤田 静雄 ほか

  
• 特許4754998, 特願2006-041640, 二光子吸収材料

  藤田 静雄 ほか

  
• 特許4704894, 特開2007-138230, 特願2005-332083, 成膜方法及び成膜装置

  藤田 静雄 ほか

  
• 特許4672996, 特開2005-305233, 特願2004-122836, 成膜用霧化装置

  藤田 静雄 ほか

  
• 特許4526339, 特願2004-268122, 発光体

  藤田 静雄 ほか

  
• 特許4475432, 特願2007-019382, 情報記録方法及び情報再生方法

  藤田 静雄 ほか

  
• 特許4401264, 特願2004-268202, 蛍光体およびその製造方法ならびに発光装置

  藤田 静雄 ほか

  
• 特許4270381, 特願2004-055245, 導電性重合体及びその製造方法並びにそれを用いた有機太陽電池

  藤田 静雄 ほか

  
• 特許4197109, 特願2002-229110, 照明装置

  藤田 静雄 ほか

  
• 特許2784093, 特願平03-027065, 半導体装置

  藤田 静雄 ほか

  
• 特許2616287, 特願平03-194927, 半導体装置

  藤田 静雄 ほか

  

Awards

• 31 Oct. 2022

  応用物理学会関西支部, 関西支部貢献賞

  酸化ガリウムの研究開発と実用開発に向けた取り組み

  Fujita, Shizuo and Kaneko, Kentaro
• 31 Aug. 2017

  JST/NEDO, Award for Academic Startups

  hitora, toshimi and Fujita, Shizuo
• 31 Mar. 2020

  The Japan Society of Applied Physics, Compound Semiconductor Electronics Achievement Award

  GaAs系，ZnSe系，および酸化物半導体の結晶成長における新技術開拓への貢献

  Fujita, Shizuo
• 02 Sep. 2008

  The Japan Society of Applied Physics, 応用物理学会フェロー表彰
• 14 Apr. 2010

  The Japan Society of Applied Physics, 応用物理学会APEX/JJAP編集貢献賞
• 17 Sep. 2014

  The Japan Society of Applied Physics, 応用物理学会論文賞（解説論文賞）

External funds: Kakenhi

• Creating science of vacuum-ultraviolet optical processes in semiconductors

  Grant-in-Aid for Scientific Research (A)

  Medium-sized Section 21:Electrical and electronic engineering and related fields

  Kyoto University

  Shizuo Fujita

  From 01 Apr. 2020, To 31 Mar. 2023, Project Closed

  超ワイドギャップ半導体;酸化物半導体;真空紫外光;光物性;量子構造

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20H00246/
• Illumination design based on brain science and cell physiology

  Grant-in-Aid for Challenging Research (Exploratory)

  Medium-sized Section 21:Electrical and electronic engineering and related fields

  Kyoto University

  Shizuo Fujita

  From 28 Jun. 2019, To 31 Mar. 2021, Project Closed

  発光ダイオード;脳波測定;アルファ波;タンパク質;照明環境;光工学;脳波;狭帯域光;住環境;磁気共鳴画像

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19K21973/
• Basic development of deep ultraviolet plasmonics and its application to highly efficient deep ultraviolet light emitting devices

  Grant-in-Aid for Scientific Research (B)

  Basic Section 30020:Optical engineering and photon science-related

  Osaka Prefecture University

  Koichi Okamoto

  From 01 Apr. 2018, To 31 Mar. 2021, Project Closed

  プラズモニクス;深紫外;酸化物半導体;発光素子;量子構造;金属ナノ構造;表面プラズモン;NHoM構造;UVC

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18H01903/
• Cell-photon engineering with ultra-narrow-band LEDs

  Grant-in-Aid for Challenging Research (Exploratory)

  Kyoto University

  Shizuo Fujita

  From 30 Jun. 2017, To 31 Mar. 2019, Project Closed

  超狭帯域光;発光ダイオード;細胞;蛋白質;狭帯域光;光刺激;線維芽細胞;コラーゲン;希土類添加LED

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17K18879/
• Creation of optical functions below 200nm with ultra-wide band gap oxide semiconductor quantum structure

  Grant-in-Aid for Scientific Research (A)

  Kyoto University

  Shizuo Fujita

  From 01 Apr. 2017, To 31 Mar. 2020, Project Closed

  光物性;量子井戸;酸化物;深紫外;量子構造

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H01263/
• Development of novel photocatalyst consisting with low-cost and abundant materials

  Grant-in-Aid for Young Scientists (B)

  Kyoto University

  KENTARO KANEKO

  From 01 Apr. 2015, To 31 Mar. 2017, Project Closed

  酸化物半導体;可視光応答型光触媒;化学気相成長法;光触媒;酸化鉄;薄膜作製;導電性;結晶薄膜;バンドギャップ変調;混晶;酸化物;ドーピング;結晶成長

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15K17461/
• Conductivity control of oxide semiconductors with reduction-reactions introduced to control oxidation processes

  Grant-in-Aid for Challenging Exploratory Research

  Kyoto University

  Shizuo Fujita

  From 01 Apr. 2015, To 31 Mar. 2017, Project Closed

  酸化物半導体;伝導性制御;酸化還元反応;酸化スズ;酸化ガリウム

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15K13350/
• Evolution of functional single-crystalline oxide thin films by mist deposition

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Shizuo Fujita

  From 01 Apr. 2013, To 31 Mar. 2016, Project Closed

  酸化物半導体;環境材料;結晶成長;省エネルギー;電子デバイス・機器;多機能デバイス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-25286050/
• Evolution of optical-electronic-magnetic multifunctions with novel oxide semiconductors

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Shizuo FUJITA

  From 01 Apr. 2010, To 31 Mar. 2013, Project Closed

  酸化ガリウム;コランダム構造;混晶;スピントロニクス;バンドギャップ制御;ヘテロ構造;パワーデバイス;ドーピング;酸化物半導体;量子機能;機能エンジニアリング;バンドギャップエンジニアリング;ミストCVD法

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360007/
• 有機薄膜のミスト成膜法の開発

  Grant-in-Aid for Exploratory Research

  Kyoto University

  藤田 静雄

  From 01 Apr. 2007, To 31 Mar. 2009, Project Closed

  有機薄膜;ミスト法;超音波霧化;成膜装置;超音波伝搬;有機デバイス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19656192/
• Study on gallium oxide-based deep ultraviolet light emitters

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Shizuo FUJITA

  From 01 Apr. 2007, To 31 Mar. 2010, Project Closed

  酸化物半導体;深紫外線;光源;検出器;結晶成長;物性制御;バルク基板;酸化ガリウム;MBE成長;深紫外光領域;発光デバイス;光検出器;パワー電子デバイス;ステップフロー成長;多層構造

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19360007/
• Zinc Oxide-Based Semiconductor Quasi Alloys Exhibiting p-Type Conductivity

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Shizuo FUJITA

  From 01 Apr. 2005, To 31 Mar. 2007, Project Closed

  酸化亜鉛;P型伝導;疑似混晶;超格子;ドーピング;分子線エピタキシ;銅系酸化物薄膜;ワイドギャップ半導体;擬似混晶;p型伝導;デラフォサイト型酸化物;MBE;サブバンド形成;紫外発光デバイス, zinc oxide;p-type;quasi alloy;superlattice;doping;molecular beam epitaxy;cupper-based oxide thin film;wide band gap semiconductor

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360010/
• Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines

  Grant-in-Aid for Scientific Research (B)

  KYOTO UNIVERSITY

  Shizuo FUJITA

  From 01 Apr. 2003, To 31 Mar. 2005, Project Closed

  集束イオンビーム;ナノ加工;ナノドット;MOCVD成長;配列制御;酸化亜鉛;励起子物性;光機能;ZnO, focused ion beam;nanopatterning;nanodots;MOCVD growth;artificial arrangement;zinc oxide;exciton properties;optical functions

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360009/
• Photodynamics of White Luminescence in Organic Thin Films

  Grant-in-Aid for Scientific Research (B)

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 2001, To 31 Mar. 2003, Project Closed

  発光ダイナミクス;有機発光材料;白色発光デバイス;時間分解発光測定;HOMO-LUMOエネルギー;分散構造;エネルギー緩和過程, luminescence dynamics;organic luminescent layer;white-luminescence device;time-resolved spectroscopy;HOMO-LUMO energy levels;codoped structure;Energy transfer

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13450011/
• 短波長材料における励起子局在化の空間制御と多波長発光の研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Science and Engineering

  Kyoto University

  藤田 茂夫

  From 01 Apr. 2001, To 31 Mar. 2004, Project Closed

  短波長材料;窒化物半導体;酸化物半導体;励起子;組成不均一;局在化;多波長発光;時間スペクトロスコピー;時間空間分解スペクトロスコピー

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13026216/
• 直接遷移型多色発光材料の研究

  Grant-in-Aid for Exploratory Research

  Kyoto University

  藤田 静雄

  From 01 Apr. 2000, To 31 Mar. 2001, Project Closed

  励起子;量子ドット;相分離;CdSe;ZnCdO;多色発光;青色ルミネセンス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12875062/
• InAlN系半導体量子ドットの自己形成に関する研究

  Grant-in-Aid for Exploratory Research

  Kyoto University

  川上 養一

  From 01 Apr. 1999, To 31 Mar. 2000, Project Closed

  InAlN;InGaN;励起子;局在;輻射再結合過程;光利得生成機構

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11875072/
• 半導体/強磁性体薄膜多層構造による励起子磁気光学効果の創出

  Grant-in-Aid for Exploratory Research

  Kyoto University

  藤田 静雄

  From 01 Apr. 1999, To 31 Mar. 2000, Project Closed

  励起子;励起子磁気光学効果;強磁性体薄膜;ZnO;多層構造;配向特性

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11875005/
• 表面エネルギー変調エピタキシーによる半導体不整合系へテロ構造の作製

  Grant-in-Aid for Scientific Research (C)

  Kyoto University

  船戸 充

  From 01 Apr. 1999, To 31 Mar. 2001, Project Closed

  表面エネルギー;半導体へテロ構造;不整合;GaN;GaAs;結晶構造

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650014/
• Photodynamics of Organic Thin Film Multilayer Struvtures with Optical Functions

  Grant-in-Aid for Scientific Research (B).

  KYOTO UNIVERSITY

  Shizuo FUJITA

  From 01 Apr. 1999, To 31 Mar. 2001, Project Closed

  有機薄膜多層構造;HOMOエネルギー;LUMOエネルギー;光ダイナミクス;発光再結合寿命;励起子局在;白色EL;光タイナミクス;Alq;TPD;PBD, organic materials multilayer structures;HOMO energy;LUMO energy;photodynamics;radiative recombination lifetime;exciton localization;white EL

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11450013/
• Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules

  Grant-in-Aid for Scientific Research (A).

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1998, To 31 Mar. 2001, Project Closed

  ワイドギャップ半導体;励起子;励起子分子;低次元構造;局在;時間分解分光;発光ダイナミクス;ZnCdSe;InGaN;量子ドット;多体効果;局在化, Widegap Semiconductors;Exciton;Exciton Molecule;Low-dimensional Structures;Localization;Time-resolved spectroscopy;Luminescence Dynamics

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305025/
• 有機薄膜界面超構造の設計と制御に関する研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Kyoto University

  藤田 茂夫

  From 01 Apr. 1997, To 31 Mar. 1998, Project Closed

  有機薄膜;超構造;多層構造;分子分散構造;タイプI型エネルギー構造;エレクトルミネセンス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09217229/
• Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures

  Grant-in-Aid for Scientific Research (B)

  KYOTO UNIVERSITY

  Shizuo FUJITA

  From 01 Apr. 1996, To 31 Mar. 1998, Project Closed

  光照射結晶成長;原料の光感度による反応の選択性;照射光波長による反応の選択性;基板温度による反応の選択性;ZnCdSSe;低次元構造;構造制御;量子構造, photoassisted growth;growth selectivity for photoirradiation;growth selectivity with photon energy;growth selectivity with temperature;ZnCdSSe;low dimensional structure;structure control;quantum structure

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455013/
• 有機薄膜界面超構造の設計と制御に関する研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Kyoto University

  藤田 茂夫

  From 01 Apr. 1996, To 31 Mar. 1997, Project Closed

  界面超構造;有機EL;薄膜多層構造;分子線蒸着法;分子配列

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08231238/
• II-VI族化合物半導体低次元構造における励起子ダイナミクスの研究

  Grant-in-Aid for General Scientific Research (C)

  Kyoto University

  川上 養一

  From 01 Apr. 1995, To 31 Mar. 1996, Project Closed

  ZnSe系量子井戸;青緑色発光素子;励起子;局在;励起子分子;発光ダイナミクス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650052/
• Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions

  Grant-in-Aid for Scientific Research (A)

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1995, To 31 Mar. 1998, Project Closed

  光触媒反応;反応過程;ZnCdSSe;不純物添加;p型伝導性制御;量子構造;電流注入レーザ発振;反応素過程;欠陥制御;励起子発光寿命, photocatalysis;growth processes;ZnCdSSe;impurity doping;p-type control;quantum structure;current-injection lasing

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07405017/
• 分子性機能薄膜の配向性とキャリア伝導機構制御に関する研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Kyoto University

  藤田 茂夫

  From 01 Apr. 1995, To 31 Mar. 1996, Project Closed

  有機EL素子構造;Alq_3;TPD;ナノレベル;配向性制御;キャリア注入

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07241236/
• Development of blue-green semiconductor lasers by metalorganic vapor phase epitoxy

  Grant-in-Aid for Developmental Scientific Research (B)

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1994, To 31 Mar. 1996, Project Closed

  光触媒反応;水素パッシベーション;不純物添加;量子構造;急速熱処理;青緑半導体レーザ;有機金属気相成長法;ZnCdSe;p型ZnSe;窒素添加;熱処理, photocatalysis;hydrogen passivation;impurity doping;quanturn structure;rapid thermal annealing

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555006/
• II-VI族半導体量子井戸構造を用いた光吸収変調素子に関する研究

  Grant-in-Aid for General Scientific Research (C)

  Kyoto University

  川上 養一

  From 01 Apr. 1993, To 31 Mar. 1994, Project Closed

  光吸収変調;量子閉じ込めシュタルク効果;青緑色領動作;ZnCdSe;ZnSSe;励起子;原子層制御

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05805030/
• 準格子整合系異族半導体新ヘテロ構造の物性とデバイス応用に関する研究

  Grant-in-Aid for General Scientific Research (C)

  Kyoto University

  藤田 静雄

  From 01 Apr. 1993, To 31 Mar. 1994, Project Closed

  準格子整合系;異族半導体;ヘテロ構造;超格子;界面物性

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05805029/
• Epitaxial Growth of Novel II-VI Semiconductor Alloys for Ultraviolet Optical Devices

  Grant-in-Aid for General Scientific Research (B)

  KYOTO UNIVERSITY

  Shigeo FUJITA

  From 01 Apr. 1993, To 31 Mar. 1995, Project Closed

  紫外光デバイス;分子線エピタキシ-;ZnCdSSe;GaP;MIS;量子井戸構造;紫外発光ダイオード;紫外半導体レーザ;Gap;P型伝導度制御;量子井戸;原子層制御成長, Ultraviolet Optical Devices;Moleclar Beam Epitaxy;ZnCdSSe;GaP;MIS;Quantum Well

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05452097/
• イオン性の異なる準格子整合系半導体多層構造・ヘテロ界面の物性に関する研究

  Grant-in-Aid for General Scientific Research (C)

  Kyoto University

  藤田 静雄

  From 01 Apr. 1992, To 31 Mar. 1993, Project Closed

  準格子整合系半導体;異族半導体;多層構造;超格子;ヘテロ界面

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04805030/
• 表面光触媒反応による半導体薄膜成長に関する基礎研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Kyoto University

  藤田 静雄

  From 01 Apr. 1991, To 31 Mar. 1992, Project Closed

  光触媒;有機金属気相成長;質量分析;低温成長;組成制御;伝導性制御

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03239204/
• Growth and properties of ZnCdSSe new alloy semiconductors for short wavelength laser applications

  Grant-in-Aid for General Scientific Research (B)

  Kyoto University

  Shigeo FUJITA

  From 01 Apr. 1990, To 31 Mar. 1992, Project Closed

  短波長半導体レ-ザ;二重異種接合;バンド不連続;新混晶半導体;有機金属分子線成長, Short Wavelength Lasers;Double Heterostructure;Band Discontinuity;New Alloy Semiconductor

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02452147/
• 表面光触媒反応による半導体薄膜成長に関する基礎研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Kyoto University

  藤田 静雄

  From 01 Apr. 1990, To 31 Mar. 1991, Project Closed

  光触媒;有機金属気相成長;質量分析;低温成長;伝導性制御

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02253208/
• 表面光化学反応による気相エピタキシアル成長に関する研究

  Grant-in-Aid for General Scientific Research (C)

  Kyoto University

  藤田 茂夫

  From 01 Apr. 1988, To 31 Mar. 1989, Project Closed

  表面光化学反応;気相エピタキシアル成長;II-VI族半導体;光照射効果;成長機構

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550015/
• 歪超格子緩衝層を用いたOMVPE Zn(S,Se)の高品質化の研究

  Grant-in-Aid for Scientific Research on Priority Areas

  Kyoto University

  藤田 茂夫

  From 01 Apr. 1987, To 31 Mar. 1988, Project Closed

  II-VI族半導体Zn(S,Se);有機金属気相成長;ヘテロエピ成長;歪超格子緩衝層

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62604564/

External funds: others

• 脱炭素を実現する熱ソリューションビジネスエコシステムの共創 (2022年度分)

  経済産業省, 中小企業経営支援等対策費補助金

  From 01 Apr. 2022, To 31 Mar. 2023

  分担
• 高品質/高均質薄膜を実現する非真空成膜プロセスの研究開発

  国立研究開発法人新エネルギー・産業技術総合開発機構

  From 01 Feb. 2015, To 28 Feb. 2016

  藤田静雄
• 省エネルギー革新技術開発/挑戦研究（事前研究一体型）/超高耐圧酸化ガリウムパワーデバイスの研究開発

  独立行政法人新エネルギー・産業技術総合開発機構

  From 15 Jul. 2011, To 28 Feb. 2014

  藤田静雄
• ミストCVD法を用いた燃料電池金属セパレータ用高耐食性高電導性酸化膜の開発

  独立行政法人科学技術振興機構

  From 01 Apr. 2014, To 31 Mar. 2016

  黒田泰広

Education

Teaching subject(s)

• From Apr. 2016, To Mar. 2017

  Research Internship (D)

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Research Internship (M)

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Prospects of Interdisciplinary Photonics and Electronics

  Spring, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Seminar on Interdisciplinary Photonics and Electronics

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Exercises on Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Exercises on Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Seminar in Interdisciplinary Photonics and Electronics I

  Spring, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Seminar in Interdisciplinary Photonics and Electronics II

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Research Internship (D)

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Research Internship (M)

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Prospects of Interdisciplinary Photonics and Electronics

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Seminar on Interdisciplinary Photonics and Electronics

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Exercises on Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Exercises on Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Seminar in Interdisciplinary Photonics and Electronics I

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Seminar in Interdisciplinary Photonics and Electronics II

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Research Internship (D)

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Research Internship (M)

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Prospects of Interdisciplinary Photonics and Electronics

  Spring, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Seminar on Interdisciplinary Photonics and Electronics

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Exercises on Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Exercises on Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Seminar in Interdisciplinary Photonics and Electronics I

  Spring, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Seminar in Interdisciplinary Photonics and Electronics II

  Spring, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2019, To Mar. 2020

  Research Internship (D)

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Research Internship (M)

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Prospects of Interdisciplinary Photonics and Electronics

  Spring, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Seminar on Interdisciplinary Photonics and Electronics

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Exercises on Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Exercises on Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Seminar in Interdisciplinary Photonics and Electronics I

  Spring, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Seminar in Interdisciplinary Photonics and Electronics II

  Spring, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部
• From Apr. 2020, To Mar. 2021

  Physics WISE Program Special Lecture

  Year-long, 理学研究科
• From Apr. 2020, To Mar. 2021

  Research Internship (D)

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Research Internship (M)

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Prospects of Interdisciplinary Photonics and Electronics

  Spring, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Seminar on Interdisciplinary Photonics and Electronics

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Experiments and Exercises in Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Exercises on Interdisciplinary Photonics and Electronics I

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Exercises on Interdisciplinary Photonics and Electronics II

  Year-long, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Seminar in Interdisciplinary Photonics and Electronics I

  Fall, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Seminar in Interdisciplinary Photonics and Electronics II

  Fall, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Practice of Electrical and Electronic Engineering

  Fall, 工学部