Basic Information

Faculty

• Faculty of Engineering

Professional Memberships

• THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES
• THE VACUUM SOCIETY OF JAPAN
• THE JAPAN SOCIETY OF APPLIED PHYSICS
• AVS (American Vacuum Society)
• IEEE (The Institute of Electrical and Electronics Engineers, Inc.): Electron Device Society, Reliability Society

Academic Degree

• 修士（工学）(京都大学)
• 博士（工学）(京都大学)

Academic Resume (Graduate Schools)

• 京都大学, 大学院工学研究科修士課程物理工学専攻, 修了

Academic Resume (Undergraduate School/Majors)

• 京都大学, 工学部物理工学科, 卒業

Research History

• From Jul. 2016, To Present

  Kyoto University, 工学(系)研究科(研究院), Professor
• From Jul. 2005, To Jun. 2016

  Kyoto University, 工学(系)研究科(研究院), 准教授
• From Apr. 1991, To Jul. 2005

  Panasonic

ID,URL

• ORCID ID

  0000-0003-1485-5897

• J-Global ID

  201401023989700330

• External link

  http://www.propulsion.kuaero.kyoto-u.ac.jp/

researchmap URL

• https://researchmap.jp/7000008458

Research

Research Topics, Overview of the research

• Research Topics

  Plasma Science and Technology, Reliability Physics and Statistics Engineering, Advanced Process Engineering

• Overview of the research

  
  １．超微細領域でのプラズマ・固体表面界面反応制御を目指した研究：
  原子レベルでプラズマ－固体表面反応を理解することで，超微細領域で制御された新しいプラズマプロセス，プロセス最適化設計の実現．
  （例：イオンエネルギー・フラックス最適化，３次元デバイス構造での反応制御，統計的ばらつき・ゆらぎ最適制御設計，分子動力学・量子化学計算科学など）
  ２．プラズマを用いた新機能材料設計・デバイス創製とその信頼性物理に関する研究：
  宇宙空間のような極環境下において高性能・高信頼性を達成する新しい材料・デバイス設計の実現．
  （例：宇宙用途を鑑みた耐プラズマ性・超硬度特性をもつ薄膜BN構造材料設計，耐放射線性をもつ抵抗変化型メモリデバイスの高信頼性設計など）
  ３．新機能デバイス設計のための新しい電気的・光学的物性解析手法の研究：
  高信頼性材料設計を可能にする，誘電関数・量子トンネル過程に着目した新しい解析・設計手法の実現．
  （例：ナノ領域での新変調反射率分光・キャリア捕獲準位密度定量化など）

Research Interests

• プラズマプロセス
• 誘電率
• 欠陥層
• 電気容量
• 分子動力学
• プラズマ
• 欠陥
• 表面・界面
• ナノ材料
• レーザー
• 変調反射率分光
• 誘電関数
• トランジスタ
• 極低消費電力
• 界面層
• 電子
• 表面界面改質
• シリコン
• プラズマ化学
• プラズマ加工
• 表面・界面物性
• 超微細加工形状
• 半導体超微細化
• 反応粒子輸送
• プラズマエッチング
• 表面ラフネス
• マイクロプラズマ
• 亜音速・超音速流れ場
• エッチング
• 高温反応場

Research Areas

• Nanotechnology/Materials, Nanomaterials, 欠陥物理学
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, 信頼性物理学
• Nanotechnology/Materials, Material fabrication and microstructure control
• Nanotechnology/Materials, Composite materials and interfaces
• Energy, Basic plasma science

Papers

• Characterization of time-dependent dielectric degradation and breakdown in bulk hexagonal BN/Si structures

  Yuya Asamoto; Tatsuya Hattori; Masao Noma; Michiru Yamashita; Shigehiko Hasegawa; Keiichiro Urabe; Koji Eriguchi

  Journal of Applied Physics, 10 Mar. 2025, Peer-reviewed

  
• Evaluation of plasma process-induced mechanical property change in SiN films using a cyclic nanoindentation technique

  Takahiro Goya; Keiichiro Urabe; Koji Eriguchi

  Journal of Physics D: Applied Physics, 29 Aug. 2024, Peer-reviewed

  
• Study on Ion Flux From Magnetically Confined Low-Pressure Arc Discharge With a Thermionic Cathode to Substrate for High-Throughput Film Deposition Processes

  Yuya Asamoto; Keiichiro Urabe; Takayuki Matsuda; Takashi Hamano; Masao Noma; Michiru Yamashita; Shigehiko Hasegawa; Koji Eriguchi

  IEEE Transactions on Plasma Science, Jun. 2024, Peer-reviewed

  
• Characterization scheme for plasma-induced defect creation due to stochastic lateral straggling in Si substrates for ultra-low leakage devices

  Y. Sato; T. Yamada; K. Nishimura; M. Yamasaki; M. Murakami; K. Urabe; K. Eriguchi

  Technical Digest - International Electron Devices Meeting, IEDM, 12 Dec. 2020, Peer-reviewed

  
• Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)

  Tomohiro Kuyama; Keiichiro Urabe; Koji Eriguchi

  IEEE International Reliability Physics Symposium Proceedings, 01 Mar. 2021, Peer-reviewed

  
• Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance

  Takashi Hamano; Keiichiro Urabe; Koji Eriguchi

  International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 23 Sep. 2020, Peer-reviewed

  
• Optical and electrical evaluation methods of plasma-induced damage in InP substrates

  Takahiro Goya; Keiichiro Urabe; Koji Eriguchi

  Japanese Journal of Applied Physics, 03 Jun. 2024, Peer-reviewed

  
• Time-resolved laser-induced fluorescence spectroscopy using CW diode laser for diagnostics of argon-ion velocity distribution near AC-biased electrode

  Ryosuke Takahashi; Seiya Kito; Koji Eriguchi; Keiichiro Urabe

  Review of Scientific Instruments, 01 May 2024, Peer-reviewed

  
• Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems

  Toshiro Kaneko; Hiromitsu Kato; Hideaki Yamada; Muneaki Yamamoto; Tomoko Yoshida; Pankaj Attri; Kazunori Koga; Tomoyuki Murakami; Kazuyuki Kuchitsu; Sugihiro Ando; Yasuhiro Nishikawa; Kentaro Tomita; Ryo Ono; Tsuyohito Ito; Atsushi M. Ito; Koji Eriguchi; Tomohiro Nozaki; Takayoshi Tsutsumi; Kenji Ishikawa

  Japanese Journal of Applied Physics, 01 Jan. 2022, Peer-reviewed

  
• Investigation of small-fraction molecular impurities in high-pressure helium plasmas using optical plasma diagnostic methods

  Keiichiro Urabe; Minami Toyoda; Yoshinori Matsuoka; Koji Eriguchi

  Plasma Sources Science and Technology, 01 Feb. 2024, Peer-reviewed

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• In situ electrical monitoring of SiO₂/Si structures in low-temperature plasma using impedance spectroscopy

  Junki Morozumi; Takahiro Goya; Tomohiro Kuyama; Koji Eriguchi; Keiichiro Urabe

  Japanese Journal of Applied Physics, 02 May 2023, Peer-reviewed

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• Predicting the effects of plasma-induced damage on p–n junction leakage and its application in the characterization of defect distribution

  Yoshihiro Sato; Satoshi Shibata; Kazuko Nishimura; Masayuki Yamasaki; Masashi Murakami; Keiichiro Urabe; Koji Eriguchi

  Journal of Vacuum Science & Technology B, Dec. 2022, Peer-reviewed

  
• Multi-harmonic analysis in a floating harmonic probe method for diagnostics of electron energy and ion density in low-temperature plasmas

  Seiya Kito; Keiichiro Urabe; Koji Eriguchi

  Japanese Journal of Applied Physics, Sep. 2022, Peer-reviewed

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• Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

  Yoshihiro Sato; Satoshi Shibata; Takayoshi Yamada; Kazuko Nishimura; Masayuku Yamasaki; Masashi Murakami; Keiichiro Urabe; Koji Eriguchi

  IEEE Journal of the Electron Devices Society, May 2022, Peer-reviewed

  
• Formation of High functional boron nitride film formed by reactive plasma assisted coating method (RePAC/MEP-IP)

  Noma Masao; Yamashita Michiru; Eriguchi Kouji; Hasegawa Shigehiko

  Abstract of annual meeting of the Surface Science of Japan, 2017

  
• Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique

  T. Matsuda; T. Hamano; Y. Asamoto; M. Noma; M. Yamashita; S. Hasegawa; K. Urabe; K. Eriguchi

  Japanese Journal of Applied Physics, 01 Jul. 2022, Peer-reviewed

  
• Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis

  Tomohiro Kuyama; Keiichiro Urabe; Koji Eriguchi

  Journal of Applied Physics, 07 Apr. 2022, Peer-reviewed

  
• Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method

  Takashi Hamano; Takayuki Matsuda; Yuya Asamoto; Masao Noma; Shigehiko Hasegawa; Michiru Yamashita; Keiichiro Urabe; Koji Eriguchi

  Applied Physics Letters, 17 Jan. 2022, Peer-reviewed

  
• Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

  Koji Eriguchi

  Jpn. J. Appl. Phys., Mar. 2021, Peer-reviewed, Invited, Lead author

  
• Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

  Masahito Mori; Shoki Irie; Yugo Osano; Koji Eriguchi; Kouichi Ono

  J. Vac. Sci. Technol. A, 2021, Peer-reviewed

  
• Characterization of dynamic behaviors of defects in Si substrates created by H2 plasma using conductance method

  Tomohiro Kuyama; Keiichiro Urabe; Masanaga Fukawsawa; Tetsuya Tatsumi; Koji Eriguchi

  Japanese Journal of Applied Physics, 01 Jun. 2020, Peer-reviewed, Last author

  
• Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions

  Yoshihiro Sato; Satoshi Shibata; Keiichiro Urabe; Koji Eriguchi

  JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, Dec. 2019, Peer-reviewed

  
• Microplasma thruster powered by X-band microwaves

  T. Takahashi; D. Mori; T. Kawanabe; Y. Takao; K. Eriguchi; K. Ono

  J. Appl. Phys., 2019, Peer-reviewed

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• Characterization of the distribution of defects introduced by plasma exposure in Si substrate

  Y. Sato; S. Shibata; A. Uedono; K. Urabe; K. Eriguchi

  J. Vac. Sci. Technol., Jan. 2019, Peer-reviewed

  
• Characterization of electric-field enhancement leading to circuit-layout dependent damage of low-k films when exposed to processing plasma

  Taro Ikeda; Akira Tanihara; Nobuhiko Yamamoto; Koji Eriguchi

  J. Appl. Phys., 2019, Peer-reviewed

  
• Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance-voltage characteristics

  Takashi Hamano; Keiichiro Urabe; Koji Eriguchi

  J. Phys. D: Applied Physics, 2019, Peer-reviewed

  
• Characterization of surface modification mechanisms for boron nitride films under plasma exposure

  Tomoya Higuchi; Masao Noma; Michiru Yamashita; Keiichiro Urabe; Shigehiko Hasegawa; Koji Eriguchi

  Surface and Coatings Technol., 2019, Peer-reviewed

  
• Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas

  Masahito Mori; Yugo Osano; Shoki Irie; Koji Eriguchi; Kouichi Ono

  J. Vac. Sci. Technol. A, 2019, Peer-reviewed

  
• Improvement of the plasma‐induced defect generation model in Si substrates and the optimization design framework

  Koji Eriguchi; Takashi Hamano; Keiichiro Urabe

  Plasma Process. Polym., 2019, Peer-reviewed

  
• Ripple formation on Si surfaces during plasma etching in Cl2

  Nobuya Nakazaki; Haruka Matsumoto; Soma Sonobe; Takumi Hatsuse; Hirotaka Tsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  AIP Advances, 01 May 2018, Peer-reviewed

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• Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas

  T. Hamano; K. Eriguchi

  Jpn. J. Appl. Phys., May 2018, Peer-reviewed

  
• First-principles predictions of electronic structure change in plasma-damaged materials

  Y. Yoshikawa; K. Eriguchi

  Jpn. J. Appl. Phys., May 2018, Peer-reviewed

  
• Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

  T. Kuyama; K. Eriguchi

  Jpn. J. Appl. Phys., May 2018, Peer-reviewed

  
• Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection

  Takumi Hatsuse; Nobuya Nakazaki; Hirotaka Tsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  J. Appl. Phys., 2018, Peer-reviewed

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• Electrical characterization of carrier trapping behavior of defects created by plasma exposures

  Koji Eriguchi; Yukimasa Okada

  JOURNAL OF PHYSICS D-APPLIED PHYSICS, Jul. 2017, Peer-reviewed

  
• Characterization of residual defects in plasma-exposed Si substrates using cathodoluminescence and positron annihilation spectroscopy

  Yoshihiro Sato; Satoshi Shibata; Ryota Sakaida; Koji Eriguchi

  17th International Workshop on Junction Technology, IWJT 2017, 30 Jun. 2017, Peer-reviewed

  
• Defect generation in electronic devices under plasma exposure: Plasma-induced damage

  Koji Eriguchi

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2017, Peer-reviewed, Invited

  
• Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing

  Kengo Shinohara; Kentaro Nishida; Kouichi Ono; Koji Eriguchi

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2017, Peer-reviewed

  
• Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films

  Kentaro Nishida; Kouichi Ono; Koji Eriguchi

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2017, Peer-reviewed

  
• Analytic Modeling for Nanoscale Resistive Filament Variation in ReRAM With Stochastic Differential Equation

  Zhiqiang Wei; Koji Eriguchi

  IEEE TRANSACTIONS ON ELECTRON DEVICES, May 2017, Peer-reviewed

  
• Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

  K. Ono; N. Nakazaki; H. Tsuda; Y. Takao; K. Eriguchi

  J. Phys. D, Mar. 2017, Peer-reviewed

  
• Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage

  Koji Eriguchi

  J. Phys. D, Mar. 2017, Peer-reviewed

  
• True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

  Z. Wei; Y. Katoh; S. Ogasahara; Y. Yoshimoto; K. Kawai; Y. Ikeda; K. Eriguchi; K. Ohmori; S. Yoneda

  Technical Digest - International Electron Devices Meeting, IEDM, 31 Jan. 2017, Peer-reviewed

  
• An evaluation method of the profile of plasma-induced defects based on capacitance–voltage measurement

  Yukimasa Okada; Kouichi Ono; Koji Eriguchi

  Jpn. J. Appl. Phys., 2017, Peer-reviewed

  
• Coatings of Boron Nitride Films for Vacuum Tribology by Reactive Plasma Assisted Coating (RePAC) Technology—Friction coefficient lowering under vacuum—

  M. Noma; K. Eriguchi; M. Yamashita; S. Hasegawa

  7th Tsukuba International Coating Symposium (TICS7), Dec. 2016, Peer-reviewed, Invited

  
• A new damage evaluation scheme predicting the nature of defects-an advanced capacitance-voltage technique

  Yukimasa Okada; Kouichi Ono; Koji Eriguchi

  38th International Symposium on Dry Process, Nov. 2016, Peer-reviewed

  
• An optical model for in-line analysis of plasma-induced interlayer dielectric damage

  Kentaro Nishida; Kouichi Ono; Koji Eriguchi

  38th International Symposium on Dry Process, Nov. 2016, Peer-reviewed

  
• Effects of plasma exposure on leakage and reliability parameters of dielectric film: New measures of damage?

  Kengo Shinohara; Kentaro Nishida; Kouichi Ono; Koji Eriguchi

  38th International Symposium on Dry Process, Nov. 2016, Peer-reviewed

  
• Defect profiling of plasma-damaged layer by surface-controlled photoreflectance spectroscopy

  Tomoya Higuchi; Yukimasa Okada; Kouichi Ono; Koji Eriguchi

  38th International Symposium on Dry Process, Nov. 2016, Peer-reviewed

  
• Surface smoothing during plasma etching of Si in Cl-2

  Nobuya Nakazaki; Haruka Matsumoto; Hirotaka Tsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  APPLIED PHYSICS LETTERS, Nov. 2016, Peer-reviewed

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• Evaluation technique for plasma-induced SiOC dielectric damage by capacitance–voltage hysteresis monitoring

  Kentaro Nishida; Yukimasa Okada; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  Jpn. J. Appl. Phys., May 2016, Peer-reviewed

  
• True Random Number Generator using Current Difference based on a Fractional Stochastic Model in 40-nm Embedded ReRAM

  Z. Wei; Y. Katoh; S. Ogasahara; Y. Yoshimoto; K. Kawai; Y. Ikeda; K. Eriguchi; K. Ohmori; S. Yoneda

  2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016, Peer-reviewed

  
• Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals

  Nobuya Nakazaki; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Dec. 2015, Peer-reviewed

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• Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate

  Takaaki Iwai; Koji Eriguchi; Shohei Yamauchi; Naotaka Noro; Junichi Kitagawa; Kouichi Ono

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Nov. 2015, Peer-reviewed

  
• Impacts of plasma process-induced damage on MOSFET parameter variability and reliability

  Koji Eriguchi; Kouichi Ono

  MICROELECTRONICS RELIABILITY, Aug. 2015, Peer-reviewed

  
• Silicon nanowire growth on Si and SiO2 substrates by rf magnetron sputtering in Ar/H-2

  Ikumi Yamada; Yutaro Hirano; Kenkichi Nishimura; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  APPLIED PHYSICS EXPRESS, Jun. 2015, Peer-reviewed

  
• Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

  Yoshinori Nakakubo; Koji Eriguchi; Kouichi Ono

  ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, Peer-reviewed

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• Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster

  Yoshinori Takao; Hiroyuki Koizumi; Kimiya Komurasaki; Koji Eriguchi; Kouichi Ono

  PLASMA SOURCES SCIENCE & TECHNOLOGY, Dec. 2014, Peer-reviewed

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• Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

  Nobuya Nakazaki; Hirotaka Tsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Dec. 2014, Peer-reviewed

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• Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments

  Hirotaka Tsuda; Nobuya Nakazaki; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 01 May 2014, Peer-reviewed

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• Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments

  Hirotaka Tsuda; Nobuya Nakazaki; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, May 2014, Peer-reviewed

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• Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas

  Nobuya Nakazaki; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, May 2014, Peer-reviewed

  
• Investigation of Plasma Characteristics and Ion Beam Extraction for a Micro RF Ion Thruster

  Yoshinori TAKAO; Masataka SAKAMOTO; Koji ERIGUCHI; Kouichi ONO

  Transactions of the Japan Society for Aeronautical and Space Sciences, Aerospace Technology Japan, 28 Mar. 2014, Peer-reviewed

  
• Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method

  Masao Noma; Koji Eriguchi; Yoshinori Takao; Nobuyuki Terayama; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• Effects of plasma-induced charging damage on random telegraph noise in metal-oxide-semiconductor field-effect transistors with SiO2 and high-k gate dielectrics

  Masayuki Kamei; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

  Asahiko Matsuda; Yoshinori Nakakubo; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage

  Tomohiro Okumura; Koji Eriguchi; Mitsuo Saitoh; Hiroshi Kawaura

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors

  Koji Eriguchi; Asahiko Matsuda; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Mar. 2014, Peer-reviewed

  
• A validation study of a 3D PIC model for a miniature microwave discharge ion thruster

  Yoshinori Takao; Koji Eriguchi; Kouichi Ono; Yuto Sugita; Hiroyuki Koizumi; Kimiya Komurasaki

  50th AIAA/ASME/SAE/ASEE Joint Propulsion Conference 2014, 2014, Peer-reviewed

  
• TDDB lifetime enhancement of high-k MOSFETs damaged by plasma processing

  Masayuki Kamei; Koji Eriguchi; Kouichi Ono

  2014 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IIRW), 2014, Peer-reviewed

  
• Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique

  M. Noma; K. Eriguchi; Y. Takao; N. Terayama; K. Ono

  Jpn. J. Appl. Phys., 2014, Peer-reviewed

  
• Plasma Etch Challenges for Nanoscale ULSI Device Fabrication : Modeling and Simulation of Surface Roughening and Rippling during Plasma Etching of Si

  ONO Kouichi; TSUDA Hirotaka; NAKAZAKI Nobuya; TAKAO Yoshinori; ERIGUCHI Koji

  J. Surf. Sci. Soc. Jpn., 10 Oct. 2013

  
• Classical molecular dynamics simulations of plasma-induced physical damage : defect generation mechanisms in fin-type MOSFET

  Koji Eriguchi; Asahiko Matsuda; Yoshinori Nakakubo; Yoshinori Takao; Kouichi Ono

  IEICE Technical Report, Oct. 2013

  
• Effect of capacitive coupling in a miniature inductively coupled plasma source

  Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Nov. 2012, Peer-reviewed

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• Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence

  Hirotaka Tsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2012, Peer-reviewed

  
• High-k MOSFET Performance Degradation by Plasma Process-Induced Charging Damage

  Koji Eriguchi; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2012, Peer-reviewed

  
• Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching

  NAKAKUBO Yoshinori; ERIGUCHI Koji; MATSUDA Asahiko; TAKAO Yoshinori; ONO Kouichi

  Technical report of IEICE. SDM, 13 Oct. 2011

  
• Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching

  ERIGUCHI Koji; NAKAKUBO Yoshinori; MATSUDA Asahiko; TAKAO Yoshinori; ONO Kouichi

  Technical report of IEICE. SDM, 13 Oct. 2011

  
• Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal-Oxide-Semiconductor Field-Effect Transistor

  Koji Eriguchi; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Oct. 2011, Peer-reviewed

  
• Frequency dependence of a plasma source in a micro RF ion thruster

  TAKAO Yoshinori; ERIGUCHI Koji; ONO Kouichi

  電気学会プラズマ研究会資料, 07 Aug. 2011

  
• Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and Their Effects on Off-State Leakage Current of Metal-Oxide-Semiconductor Field-Effect Transistors

  Masayuki Kamei; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal-Oxide-Semiconductor Field-Effect Transistors and the Optimization Methodology

  Koji Eriguchi; Yoshinori Nakakubo; Asahiko Matsuda; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy

  Asahiko Matsuda; Yoshinori Nakakubo; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas

  Hirotaka Tsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness

  Hirotaka Tsuda; Hiroki Miyata; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching

  Koji Eriguchi; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges

  Yoshinori Takao; Kenji Matsuoka; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2011, Peer-reviewed

  
• Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices

  Koji Eriguchi; Yoshinori Takao; Kouichi Ono

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Jul. 2011, Peer-reviewed

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• Structural and electrical characterization of HBr/O-2 plasma damage to Si substrate

  Masanaga Fukasawa; Yoshinori Nakakubo; Asahiko Matsuda; Yoshinori Takao; Koji Eriguchi; Kouichi Ono; Masaki Minami; Fumikatsu Uesawa; Tetsuya Tatsumi

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Jul. 2011, Peer-reviewed

  
• Microwave-excited microplasma thruster with helium and hydrogen propellants

  Takeshi Takahashi; Yoshinori Takao; Yugo Ichida; Koji Eriguchi; Kouichi Ono

  PHYSICS OF PLASMAS, Jun. 2011, Peer-reviewed

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• Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source

  Yoshinori Takao; Naoki Kusaba; Koji Eriguchi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Nov. 2010, Peer-reviewed

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• Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity

  Hirotaka Tsuda; Masahito Mori; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2010, Peer-reviewed

  
• Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring

  Yoshinori Nakakubo; Asahiko Matsuda; Masanaga Fukasawa; Yoshinori Takao; Tetsuya Tatsumi; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2010, Peer-reviewed

  
• Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors

  Koji Eriguchi; Yoshinori Nakakubo; Asahiko Matsuda; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2010, Peer-reviewed

  
• Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates

  Koji Eriguchi; Yoshinori Nakakubo; Asahiko Matsuda; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, May 2010, Peer-reviewed

  
• Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue

  Hirotaka Tsuda; Masahito Mori; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  THIN SOLID FILMS, Apr. 2010, Peer-reviewed

  
• Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

  Kouichi Ono; Hiroaki Ohta; Koji Eriguchi

  THIN SOLID FILMS, Apr. 2010, Peer-reviewed

  
• Bias frequency dependence of pn junction charging damage induced by plasma processing

  Masayuki Kamei; Yoshinori Nakakubo; Koji Eriguchi; Kouichi Ono

  THIN SOLID FILMS, Apr. 2010, Peer-reviewed

  
• Modeling of ion-bombardment damage on Si surfaces for in-line analysis

  Asahiko Matsuda; Yoshinori Nakakubo; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  THIN SOLID FILMS, Apr. 2010, Peer-reviewed

  
• Numerical simulation of microwave-excited microplasma thruster with helium propellant

  T. Takahashi; Y. Takao; K. Eriguchi; K. Ono

  61st International Astronautical Congress 2010, IAC 2010, 2010, Peer-reviewed

  
• Analysis of SI substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies

  Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono

  Lecture Notes in Electrical Engineering, 2010, Peer-reviewed

  
• Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires

  Takumi Saegusa; Koji Eriguchi; Kouichi Ono; Hiroaki Ohta

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, Peer-reviewed

  
• Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors

  Koji Eriguchi; Yoshinori Nakakubo; Asahiko Matsuda; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, Peer-reviewed

  
• Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe-O films

  Koji Eriguchi; Zhiqiang Wei; Takeshi Takagi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Jan. 2010, Peer-reviewed

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• Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs

  Koji Eriguchi; Yoshinori Nakakubo; Asahiko Matsuda; Yoshinori Takao; Kouichi Ono

  IEEE ELECTRON DEVICE LETTERS, Dec. 2009, Peer-reviewed

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• Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology

  Hirotaka Tsuda; Koji Eriguchi; Kouichi Ono; Hiroaki Ohta

  APPLIED PHYSICS EXPRESS, Nov. 2009, Peer-reviewed

  
• Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2

  Hiroshi Fukumoto; Isao Fujikake; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  PLASMA SOURCES SCIENCE & TECHNOLOGY, Nov. 2009, Peer-reviewed

  
• Effects of Mask Pattern Geometry on Plasma Etching Profiles

  Hiroshi Fukumoto; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2009, Peer-reviewed

  
• Numerical and experimental study of microwave-excited microplasma and micronozzle flow for a microplasma thruster

  Takeshi Takahashi; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  PHYSICS OF PLASMAS, Aug. 2009, Peer-reviewed

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• Numerical Study on Si Etching by Monatomic Br+/Cl+ Beams and Diatomic Br-2(+)/Cl-2(+)/HBr+ Beams

  Tatsuya Nagaoka; Hiroaki Ohta; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2009, Peer-reviewed

  
• Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation

  Koji Eriguchi; Asahiko Matsuda; Yoshinori Nakakubo; Masayuki Kamei; Hiroaki Ohta; Kouichi Ono

  IEEE ELECTRON DEVICE LETTERS, Jul. 2009, Peer-reviewed

  
• An Improvement of Stillinger-Weber Interatomic Potential Model for Reactive Ion Etching Simulations

  Hiroaki Ohta; Tatsuya Nagaoka; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Feb. 2009, Peer-reviewed

  
• Selective Etching of High-k Dielectric HfO2 Films over Si in BCl3-Containing Plasmas without rf Biasing

  Keisuke Nakamura; Daisuke Hamada; Yoshinori Ueda; Koji Eriguchi; Kouichi Ono

  APPLIED PHYSICS EXPRESS, Jan. 2009, Peer-reviewed

  
• Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+

  T. Nagaoka; K. Eriguchi; K. Ono; H. Ohta

  JOURNAL OF APPLIED PHYSICS, Jan. 2009, Peer-reviewed

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• Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method

  Koji Eriguchi; Zhiqiang Wei; Takeshi Takagi; Hiroaki Ohta; Kouichi Ono

  APPLIED PHYSICS LETTERS, Jan. 2009, Peer-reviewed

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• Numerical Simulation of a Microwave-Excited Microplasma Thruster

  Takahashi, Takeshi; Ichida, Yugo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, SPACE TECHNOLOGY JAPAN, 2009, Peer-reviewed

  
• Molecular Dynamics Simulation of Si Etching by Off-Normal Cl+ Bombardment at High Neutral-to-Ion Flux Ratios

  Akira Iwakawa; Tatsuya Nagaoka; Hiroaki Ohta; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Nov. 2008, Peer-reviewed

  
• Microwave-excited microplasma thruster: a numerical and experimental study of the plasma generation and micronozzle flow

  Takeshi Takahashi; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF PHYSICS D-APPLIED PHYSICS, Oct. 2008, Peer-reviewed

  
• An interatomic potential model for molecular dynamics simulation of silicon etching by Br(+)-containing plasmas

  H. Ohta; A. Iwakawa; K. Eriguchi; K. Ono

  JOURNAL OF APPLIED PHYSICS, Oct. 2008, Peer-reviewed

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• Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects

  Yoshinori Takao; Takeshi Takahashi; Koji Eriguchi; Kouichi Ono

  PURE AND APPLIED CHEMISTRY, Sep. 2008, Peer-reviewed

  
• Numerical Investigation on Origin of Microscopic Surface Roughness during Si Etching by Chemically Reactive Plasmas

  Akira Iwakawa; Hiroaki Ohta; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2008, Peer-reviewed

  
• Estimation of defect generation probability in thin Si surface damaged layer during plasma processing

  Koji Eriguchi; Akira Ohno; Daisuke Hamada; Masayuki Kamei; Kouichi Ono

  THIN SOLID FILMS, Aug. 2008, Peer-reviewed

  
• Quantitative characterization of plasma-induced defect generation process in exposed thin Si surface layers

  Koji Eriguchi; Akira Ohno; Daisuke Hamada; Masayuki Kamei; Hiroshi Fukumoto; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2008, Peer-reviewed

  
• Comparative study of plasma source-dependent charging polarity in metal-oxide-semiconductor field effect transistors with high-k and SiO2 gate dielectrics

  Koji Eriguchi; Masayuki Kamei; Daisuke Hamada; Kenji Okada; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2008, Peer-reviewed

  
• Threshold voltage shift instability induced by plasma charging damage in MOSFETs with high-k dielectric

  K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono

  2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Peer-reviewed

  
• A New Framework for Performance Prediction of Advanced MOSFETs with Plasma-Induced Recess Structure and Latent Defect Site

  K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; H. Nakagawa; S. Hayashi; S. Noda; K. Ishikawa; M. Yoshimaru; K. Ono

  IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, Peer-reviewed

  
• Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices

  Koji Eriguchi; Kouichi Ono

  JOURNAL OF PHYSICS D-APPLIED PHYSICS, Jan. 2008, Peer-reviewed

  
• A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis

  Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Jun. 2007, Peer-reviewed

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• Plasma diagnostics and thrust performance analysis of a microwave-excited microplasma thruster

  Yoshinori Takao; Kouichi Ono; Kazuo Takahashi; Koji Eriguchi

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Oct. 2006, Peer-reviewed

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• A model analysis of feature profile evolution and microscopic uniformity during polysilicon gate etching in Cl-2/O-2 plasmas

  Yugo Osano; Masahito Mori; Naoshi Itabashi; Kazuo Takahashi; Koji Eriguchi; Kouichi Ono

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Oct. 2006, Peer-reviewed

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• Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond

  T. Yamashita; K. Shiga; T. Hayashi; H. Umeda; H. Oda; T. Eimori; M. Inuishi; Y. Ohji; K. Eriguchi; K. Nakanishi; H. Nakaoka; T. Yamada; M. Nakamura; I. Miyanaga; A. Kajiya; M. Kubota; M. Ogura

  IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai, 2004, Peer-reviewed

  
• CMOS and interconnect reliability gate dielectric reliability - Breakdown, and device degradation mechanism

  K. Eriguchi; P. Nicollian

  Technical Digest - International Electron Devices Meeting, IEDM, 2004, Peer-reviewed

  
• Comparison of thermal and plasma oxidations for HfO2/Si interface

  S Hayashi; K Yamamoto; Y Harada; R Mitsuhashi; K Eriguchi; M Kubota; M Niwa

  APPLIED SURFACE SCIENCE, Jun. 2003, Peer-reviewed

  
• Challenges and opportunities in high-k gate dielectric technology

  M Niwa; Y Harada; K Yamamoto; S Hayashi; R Mitsuhashi; K Eriguchi; M Kubota; Y Hoshino; Y Kido; DL Kwong

  RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES III, PROCEEDINGS, 2002, Peer-reviewed

  
• Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics

  T Yamada; M Moriwaki; Y Harada; S Fujii; K Eriguchi

  MICROELECTRONICS RELIABILITY, May 2001, Peer-reviewed

  
• Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics

  K Eriguchi; Y Harada; M Niwa

  MICROELECTRONICS RELIABILITY, Apr. 2001, Peer-reviewed

  
• Nondestructive and contactless monitoring technique of Si surface stress by photoreflectance

  M Sohgawa; M Agata; T Kanashima; K Yamashita; K Eriguchi; A Fujimoto; M Okuyama

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Apr. 2001, Peer-reviewed

  
• Photoreflectance characterization of the plasma-induced damage in Si substrate

  H Wada; M Agata; K Eriguchi; A Fujimoto; T Kanashima; M Okuyama

  JOURNAL OF APPLIED PHYSICS, Sep. 2000, Peer-reviewed

  
• Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown

  Y Harada; K Eriguchi; M Niwa; T Watanabe; Ohdomari, I

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Jul. 2000, Peer-reviewed

  
• Optical characterization of gate oxide charging damage by photoreflectance spectroscopy

  M Agata; H Wada; O Maida; K Eriguchi; A Fujimoto; T Kanashima; M Okuyama

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Apr. 2000, Peer-reviewed

  
• Effects of strained layer near SiO2-Si interface on electrical characteristics of ultrathin gate oxides

  K Eriguchi; Y Harada; M Niwa

  JOURNAL OF APPLIED PHYSICS, Feb. 2000, Peer-reviewed

  
• Impact of Structural Strained Layer near SiO2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown

  Y. Harada; K. Eriguchi; M. Niwa; T. Watanabe; I. Ohdomari

  VLSI symposium Tech. Digest/Japan Society of Applied Physics, 2000

  
• Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

  Masashi Agata; Masayuki Sohgawa; Osamu Maida; Koji Eriguchi; Akira Fujimoto; Takeshi Kanashima; Masanori Okuyama

  Technical report of IEICE. SDM, Dec. 1999

  
• Role of base layer in CVD Si₃N₄ stack gate dielectrics on the process controllability and reliability in direct tunneling regime

  Koji Eriguchi; Yoshinao Harada; Masaaki Niwa

  Technical Digest - International Electron Devices Meeting, 1999, Peer-reviewed

  
• Metal gate MOS reliability with the improved sputtering process for gate electrode

  Takayuki Yamada; Masaru Moriwaki; Yoshinao Harada; Shinji Fujii; Koji Eriguchi

  Technical Digest - International Electron Devices Meeting, 1999, Peer-reviewed

  
• Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides

  K Eriguchi; M Niwa

  IEEE ELECTRON DEVICE LETTERS, Nov. 1998, Peer-reviewed

  
• Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides

  Koji Eriguchi; M. Niwa

  APPLIED PHYSICS LETTERS, Oct. 1998, Peer-reviewed

  
• A new evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface

  K Egashira; K Eriguchi; S Hashimoto

  INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, Peer-reviewed

  
• Influence of 1nm-thick structural "strained-layer" near SiO2/Si interface on sub-4nm-thick gate oxide reliability

  K Eriguchi; Y Harada; M Niwa

  INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, Peer-reviewed

  
• Correlation between two time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing

  K Eriguchi; Y Kosaka

  IEEE TRANSACTIONS ON ELECTRON DEVICES, Jan. 1998, Peer-reviewed

  
• Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing

  K Eriguchi; M Niwa

  IEEE ELECTRON DEVICE LETTERS, Dec. 1997, Peer-reviewed

  
• Suppressing ion implantation induced oxide charging by utilizing physically damaged oxide region

  M Takase; K Eriguchi; B Mizuno

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Mar. 1997, Peer-reviewed

  
• Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress

  K Eriguchi; Y Uraoka

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Feb. 1996, Peer-reviewed

  
• Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance

  T Yamada; K Eriguchi; Y Kosaka; K Hatada

  IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, Peer-reviewed

  
• NEW METHOD FOR LIFETIME EVALUATION OF GATE OXIDE DAMAGED BY PLASMA PROCESSING

  K ERIGUCHI; Y URAOKA

  IEEE ELECTRON DEVICE LETTERS, May 1995, Peer-reviewed

  
• PLASMA-INDUCED TRANSCONDUCTANCE DEGRADATION OF NMOSFET WITH THIN GATE OXIDE

  K ERIGUCHI; M ARAI; Y URAOKA; M KUBOTA

  IEICE TRANSACTIONS ON ELECTRONICS, Mar. 1995, Peer-reviewed

  
• A new gate oxide lifetime prediction method using cumulative damage law and its applications to plasma-damaged oxides

  K Eriguchi; Y Uraoka; S Odanaka

  INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, 1995, Peer-reviewed

  
• EVALUATION TECHNIQUE OF GATE OXIDE DAMAGE

  Y URAOKA; K ERIGUCHI; T TAMAKI; K TSUJI

  IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, Aug. 1994, Peer-reviewed

  
• EVALUATION OF PLASMA DAMAGE TO GATE OXIDE

  Y URAOKA; K ERIGUCHI; T TAMAKI; K TSUJI

  IEICE TRANSACTIONS ON ELECTRONICS, Mar. 1994, Peer-reviewed

  
• QUANTITATIVE-EVALUATION OF GATE OXIDE DAMAGE DURING PLASMA PROCESSING USING ANTENNA-STRUCTURE CAPACITORS

  K ERIGUCHI; Y URAOKA; H NAKAGAWA; T TAMAKI; M KUBOTA; N NOMURA

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jan. 1994, Peer-reviewed

  
• HYDROGEN-ATOM SPECTROSCOPY OF THE IONIZING PLASMA CONTAINING MOLECULAR-HYDROGEN - LINE-INTENSITIES AND IONIZATION RATE

  K SAWADA; K ERIGUCHI; T FUJIMOTO

  JOURNAL OF APPLIED PHYSICS, Jun. 1993, Peer-reviewed

  
• Damage-free metal etching using Lissajous electron plasma

  T. Tamaki; M. Ohkuni; S. Sivaram; K. Eriguchi; I. Nakayama; M. Lubota; N. Momura

  Technical Digest - International Electron Devices Meeting, 1993, Peer-reviewed

  
• SPECTROSCOPIC DETERMINATION OF HYDROGEN AND ELECTRON-DENSITIES IN PLASMA IN THE IONIZING PHASE - APPLICATION TO WT-III

  T FUJIMOTO; K SAWADA; K TAKAHATA; K ERIGUCHI; H SUEMITSU; K ISHII; R OKASAKA; H TANAKA; T MAEKAWA; Y TERUMICHI; S TANAKA

  NUCLEAR FUSION, Sep. 1989, Peer-reviewed

  
• Numerical transport studies for the CASTOR tokamak

  T. Fujimoto; K. Sawada; K. Takahata; K. Eriguchi; H. Suemitsu; K. Ishii; R. Okasaka; H. Tanaka; T. Maekawa; Y. Terumichi; S. Tanaka

  Nuclear Fusion, 1989, Peer-reviewed

  

Misc.

• Dry Process FOREWORD

  Tatsuru Shirafuji; Keizo Kinoshita; Hiroshi Akatsuka; Koji Eriguchi; Takashi Ichikawa; Takanori Ichiki; Tatsuo Ishijima; Kenji Ishikawa; Kazuhiro Karahashi; Kazuaki Kurihara; Makoto Sekine

  JAPANESE JOURNAL OF APPLIED PHYSICS, Jun. 2020

  
• Dry Process

  M. Sekine; O. Sakai; K. Eriguchi; S. Higashi; T. Ichiki; K. Kinoshita

  Japanese Journal of Applied Physics, 20 May 2015, Peer-reviewed

  
• Foreword: Dry process

  O. Sakai; M. Sekine; S. Higashi; K. Eriguchi; T. Ichiki; K. Kinoshita; T. Tatsumi; N. Fujiwara

  Jpn. J. Appl. Phys., 01 Mar. 2014, Peer-reviewed

  
• Optical distribution of ion temperature in WT-3

  ERIGUCHI K.; TAKAHATA K.; SUEMITSU H.; FUJIMOTO T.; WT- GROUP

  Meeting Abstracts of the Physical Society of Japan, 1990

  
• SBTとPZT膜を用いたMFIS構造におけるSiO₂/Si界面の光学的評価

  神田浩文; 寒川雅之; 豊嶋吉英; 金島岳; 奥山雅則; 藤本晶; 江利口浩二

  応用物理学会学術講演会講演予稿集, 2002

  
• FIS構造における界面Siのフォトレフレクタンス分光法による評価

  神田浩文; 寒川雅之; 北井聡; 金島岳; 児玉一志; 奥山雅則; 藤本晶; 江利口浩二

  応用物理学会学術講演会講演予稿集, 2001

  
• Quantitative Evaluation of Plasma Induced Si Damage by Measurements of Electronic Trap Site Density at Hg/n-Si Interface

  EGASHIRA Kyoko; ERIGUCHI Koji; HASHIMOTO Shin

  Technical report of IEICE. SDM, 09 Dec. 1999

  
• Impacts of Plasma Process-Induced Charging Damage on Thin Gate Oxide Reliability

  ERIGUCHI Koji; YAMADA Takayuki; HASHIMOTO Yukiko K.; NIWA Masaaki

  半導体・集積回路技術シンポジウム講演論文集, 04 Dec. 1997

  
• Evaluation of Gate Oxide Lifetime under Constant-Voltage Stress by Charge-to-breakdown

  ERIGUCHI Koji; URAOKA Yukiharu

  半導体・集積回路技術シンポジウム講演論文集, 25 May 1995

  
• 6a-J-10 Radial distribution of impurity ions in a WT-III tokamaku plasma

  Takahata K.; Eriguchi K.; Suemitsu H.; Fujimoto T.; WT-III group

  Meeting Abstracts of the Physical Society of Japan, 1989

  
• Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

  Fukasawa Masanaga; Nakakubo Yoshinori; Matsuda Asahiko; Takao Yoshinori; Eriguchi Koji; Ono Kouichi; Minami Masaki; Uesawa Fumikatsu; Tatsumi Tetsuya

  Journal of Vacuum Science ＆ Technology A: Vacuum, Surfaces, and Films, 23 Jun. 2011

  
• Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices

  Eriguchi Koji; Takao Yoshinori; Ono Kouichi

  Journal of Vacuum Science ＆ Technology A: Vacuum, Surfaces, and Films, 23 Jun. 2011

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• Evaluation of Plasma Damage to Gate Oxide (Special Issue on Quarter Micron Si Device and Process Technologies)

  URAOKA Y.; Eriguchi Koji; Tamaki Tokuhiko; Tsuji Kazuhiko

  IEICE Trans. Electron., C, 1994

  
• Structural Design of Boron Nitride Films Using Ion-Flux Controlling Reactive Plasma-Assisted Coating (RePAC) Technique

  松田崇行; 濱野誉; 朝本雄也; 野間正男; 山下満; 長谷川繁彦; 占部継一郎; 江利口浩二

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2021

  
• Control of Ion Flux to the Substrate in Material Processing with a Vacuum-Arc Discharge Considering Discharge Current Limitation Mechanisms

  朝本雄也; 松田崇行; 濱野誉; 野間正男; 長谷川繁彦; 山下満; 占部継一郎; 江利口浩二

  応用物理学会秋季学術講演会講演予稿集(CD-ROM), 2021

  
• Mechanical properties and surface sputtering of boron nitride films prepared by a reactive plasma assisted coating method

  占部継一郎; 住平透; 野間正男; 山下満; 長谷川繁彦; 江利口浩二

  日本航空宇宙学会中部・関西支部合同秋期大会講演論文集(CD-ROM), 2019

  
• Optical Characterization of Si Surface Having Ultrathin Oxide and Plasma-damaged Layer

  IMAI Takaaki; ERIGUCHI Koji; FUJIMOTO Akira; OKUYAMA Masanori

  Technical report of IEICE. SDM, 05 Dec. 1996

  
• Relationship between charge-to-breakdown and time-to-breakdown of the gate oxide damaged by plasma processing

  ERIGUCHI Koji; YAMADA Takayuki; KOSAKA Yukiko; HATADA Kenzo

  Technical report of IEICE. SDM, 23 May 1996

  
• Surface Wave-excited Plasmas for Electrodeless Electric Propulsion

  間 友貴; 鷹尾 祥典; 江利口 浩二

  宇宙科学技術連合講演会講演集, 09 Oct. 2013

  
• Modeling of Plasma-Surface Interactions and Profile Evolution during Dry Etching

  ONO Kouichi; ERIGUCHI Koji

  Journal of plasma and fusion research, 25 Apr. 2009

  
• Dry Etching Technology of High Dielectric Constant (High-k) Materials

  ONO Kouichi; TAKAHASHI Kazuo; ERIGUCHI Koji

  Journal of plasma and fusion research, 25 Apr. 2009

  
• Plasma etching process for advanced CMOS and memory device fabrication

  Koji Eriguchi; Keiichiro Urabe

  Oyo Butsuri, Dec. 2018, Invited

  
• Formation of superhard c-BN films on the body and edge of cutting tools by reactive plasma-assisted coating (RePAC)

  M. Noma; M. Yamashita; K. Eriguchi; S. Hasegawa

  The 16th International Conference on Precision Engineering, Nov. 2016, Peer-reviewed

  
• Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals (vol 118, 233304, 2015)

  Nobuya Nakazaki; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  JOURNAL OF APPLIED PHYSICS, Feb. 2016

  
• Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon

  N. Nakazaki; H. Matsumoto; S. Sonobe; Y. Takao; K. Eriguchi; K. Ono

  Proc. 37th International Symposium on Dry Process (DPS), Nov. 2015, Peer-reviewed

  
• Silicon Nanowire Groeth on Si and SiO2 Substrate by Plasma Sputtering

  C. Takeshita; I. Yamada; Y. Hirano; K. Nishimura; Y. Takao; K. Eriguchi; K. Ono

  Proc. 37th International Symposium on Dry Process (DPS), Nov. 2015, Peer-reviewed

  
• Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate

  Y. Okada; K. Eriguchi; K. Ono

  Proc. 37th International Symposium on Dry Process (DPS), Nov. 2015, Peer-reviewed

  
• A new evaluation method to characterize low-k dielectric damage during plasma processing

  K. Nishida; Y. Okada; Y. Takao; K. Eriguchi; K. Ono

  Proc. 37th International Symposium on Dry Process (DPS), Nov. 2015, Peer-reviewed

  
• Role of Plasma Density in Damage Characterization and its Impact on Low-Damage Plasma Process Design

  K. Eriguchi; M. Kamei; Y. Nakakubo; K. Ono

  AVS 62nd International Symposium & Exhibition, Oct. 2015, Peer-reviewed

  
• Distribution Projecting the Reliability for 40 nm ReRAM and beyond based on Stochastic Differential Equation

  Z. Wei; K. Eriguchi; S. Muraoka; K. Katayama; R. Yasuhara; K. Kawai; Y. Ikeda; M. Yoshimura; Y. Hayakawa; K. Shimakawa; T. Mikawa; S. Yoneda

  2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015, Peer-reviewed

  
• Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing

  Yukimasa Okada; Koji Eriguchi; Kouichi Ono

  2015 INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT), 2015, Peer-reviewed

  
• Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout

  Taro Ikeda; Akira Tanihara; Nobuhiko Yamamoto; Shigeru Kasai; Koji Eriguchi; Kouichi Ono

  2015 International Conference on IC Design & Technology (ICICDT), 2015, Peer-reviewed

  
• A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures

  Z. Wei; K. Katayama; S. Muraoka; R. Yasuhara; T. Mikawa; K. Eriguchi

  2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2015, Peer-reviewed

  
• Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method

  M. Noma; K. Eriguchi; S. Hasegawa; M. Yamashita; K. Ono

  Proc. 36th International Symposium on Dry Process (DPS), Nov. 2014, Peer-reviewed

  
• Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation -

  T. Ikeda; K. Eriguchi; A. Tanihara; S. Kasai; K. Ono

  Proc. 36th International Symposium on Dry Process (DPS), Nov. 2014, Peer-reviewed

  
• Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface

  T. Iwai; K. Eriguchi; S. Yamauchi; N. Noro; J. Kitagawa; K. Ono

  Proc. 36th International Symposium on Dry Process (DPS), Nov. 2014, Peer-reviewed

  
• Systematic comparison of various analytical techniques for evaluating plasma-induced damage recovery

  M. Fukasawa; K. Eriguchi; K. Nagahata; K. Ono; T. Tatsumi

  Proc. 36th International Symposium on Dry Process (DPS), Nov. 2014, Peer-reviewed

  
• A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs

  K. Eriguchi; K. Ono

  Proc. 36th International Symposium on Dry Process (DPS), Nov. 2014, Peer-reviewed

  
• A Novel Reactive Plasma-Assisted Coating Technique (RePAC) for Thin BN/Crystalline-Si Structures and their Mechanical and Electrical Properties

  K. Eriguchi; M. Noma; S. Hasegawa; M. Yamashita; K. Ono

  the AVS 61st International Symposium & Exhibition, Nov. 2014, Peer-reviewed

  
• Nanometer-Scale Surface Feature Fluctuation in Plasma Etching

  ONO Kouichi; NAKAZAKI Nobuya; TSUDA Hirotaka; TAKAO Yoshinori; ERIGUCHI Koji

  プラズマ・核融合学会誌, Jul. 2014

  
• Plasma-Induced Damage in 3D Structures behind Device Scaling

  K. Eriguchi; Y. Takao; K. Ono

  Plasma Etch and Strip in Microtechnology (PESM), May 2014, Peer-reviewed

  
• Effects of ion-bombardment damage on mechanical properties of c-BN thin films formed by a magnetically-enhanced plasma ion plating method

  M. Noma; K. Eriguchi; S. Hasegawa; M.Yamashita; Y. Takao; N. Terayama; K. Ono

  6th Int. Symp. Adv. Plasma Sci. and its Application for Nitrides and Nanomaterials / 7th Int. Conf. on Plasma Nano-Technol. & Sci., 05pP48, Mar. 2014, Peer-reviewed

  
• Surface roughening during Si etching in inductively coupled Cl2 plasmas

  N. Nakazaki; Y. Takao; K. Eriguchi; K. Ono

  The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, Feb. 2014, Peer-reviewed

  
• Impacts of plasma process parameters on mechanical properties of c-BN thin-films

  M. Noma; K. Eriguchi; S. Hasegawa; M.Yamashita; Y. Takao; N. Terayama; K. Ono

  The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2, Feb. 2014, Peer-reviewed

  
• Random Telegraph Noise as A New Measure of Plasma-Induced Charging Damage in MOSFETs

  Masayuki Kamei; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  2014 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT), 2014, Peer-reviewed

  
• A New Aspect of Plasma-Induced Physical Damage in Three-Dimensional Scaled Structures-Sidewall Damage by Stochastic Straggling and Sputtering

  Koji Eriguchi; Yoshinori Takao; Kouichi Ono

  2014 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT), 2014, Peer-reviewed

  
• TDDB lifetime enhancement of high-k MOSFETs damaged by plasma processing

  Masayuki Kamei; Koji Eriguchi; Kouichi Ono

  2014 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IIRW), 2014, Peer-reviewed

  
• Molecular dynamics analysis of Si etching in HBr-based plasmas: Effects of neutral radicals

  N. Nakazaki; Y. Takao; K. Eriguchi; K. Ono

  Proc. 35th International Symposium on Dry Process (DPS), Nov. 2013, Peer-reviewed

  
• Effect of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs

  KAMEI Masayuki; NAKAKUBO Yoshinori; TAKAO Yoshinori; ERIGUCHI Koji; ONO Kouichi

  Technical report of IEICE. SDM, 17 Oct. 2013

  
• Scenario of plasma-induced physical damage in FinFET – the effects of "straggling" of incident ions by a range theory –

  K. Eriguchi; A. Matsuda; Y. Takao; K. Ono

  Proc. 35th International Symposium on Dry Process (DPS), pp. 181-182, Aug. 2013, Peer-reviewed

  
• Comprehensive Evidence-based Guidelines for Annealing Plasma-damaged Si Substrates - Impact of plasma process conditions -

  M. Fukasawa; A. Matsuda; Y. Nakakubo; S. Sugimura; K. Nagahata; Y. Takao; K. Eriguchi; K. Ono; T. Tatsumi

  Proc. 35th International Symposium on Dry Process (DPS), pp. 183-184, Aug. 2013, Peer-reviewed

  
• Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO2 and High-k Gate Dielectrics

  M. Kamei; Y. Takao; K. Eriguchi; K. Ono

  Proc. 35th International Symposium on Dry Process (DPS), pp. 185-186, Aug. 2013, Peer-reviewed

  
• micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage

  A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono

  Proc. 35th International Symposium on Dry Process (DPS), pp. 9-10, Aug. 2013, Peer-reviewed

  
• Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique

  M. Noma; K. Eriguchi; Y. Takao; N. Terayama; K. Ono

  Proc. 35th International Symposium on Dry Process (DPS), pp. 39-40, Aug. 2013, Peer-reviewed

  
• Recovery of Plasma-Induced Si Substrate Damage Using Atmospheric Thermal Plasma

  T. Okumura; K. Eriguchi; M. Saitoh; H. Kawaura

  Proc. 35th International Symposium on Dry Process (DPS), pp. 41-42, Aug. 2013, Peer-reviewed

  
• Atomistic Simulations of Plasma Process-Induced Si Substrate Damage - Effects of Substrate Bias-Power Frequency -

  Asahiko Matsuda; Yoshinori Nakakubo; Yoshinori Takao; Koji Eriguchi; Kouichi Ono

  2013 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2013, Peer-reviewed

  
• Modeling and Simulation of Nanoscale Surface Roughness during Plasma Etching of Si: Mechanism and Reduction

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. 34th International Symposium on Dry Process (DPS), Nov. 2012, Peer-reviewed

  
• Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems

  N. Nakazaki; H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. 34th International Symposium on Dry Process (DPS), Nov. 2012, Peer-reviewed

  
• Microwave-Excited Microplasma Thrusters Using Surface Wave and Electron Cyclotron Resonance Discharges

  Mori, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  Bulletin of the American Physical Society,57 (8), p. 22, Oct. 2012

  
• Particle simulation of a micro inductively coupled plasma source including an external circuit

  Takao, Yoshinori; Sakamoto, Masataka; Eriguchi, Koji; Ono, Kouichi

  Bulletin of the American Physical Society,57 (8), p. 77, Oct. 2012

  
• Model Analysis of Nanoscale Surface Roughness and Rippling during Plasma Etching of Si under Oblique Ion Incidence: Effects of Oxygen Addition

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), 2012, Peer-reviewed

  
• Molecular Dynamics Analysis of Si Etching with Cl beams: Ion Incident Angle and Neutral Radical Flux Dependence

  N. Nakazaki; H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. The 5th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), 2012, Peer-reviewed

  
• Three-Dimensional Parameter Mapping of Annealing Process for HBr/O2-Plasma-Induced Damages in Si Substrates

  A. Matsuda; Y. Nakakubo; M. Fukasawa; Y. Takao; T. Tatsumi; K. Eriguchi; K. Ono

  Proc. 34th International Symposium on Dry Process (DPS), pp. 181-182, 2012, Peer-reviewed

  
• Miniature ion thruster using a cylindrical micro ICP

  Y. Takao; K. Eriguchi; K. Ono

  48th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit 2012, 2012, Peer-reviewed

  
• Optimization problems for plasma-induced damage - A concept for plasma-induced damage design

  Koji Eriguchi; Yoshinori Nakakubo; Asahiko Matsuda; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology, 2012, Peer-reviewed

  
• High-k MOSFET Performance Degradation by Plasma Process-Induced Charging Damage

  Koji Eriguchi; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2012, Peer-reviewed

  
• Numerical analysis of inductive and capacitive coupling in radio-frequency micro discharges

  Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  Bulletin of the American Physical Society,56 (15), p. 36, Nov. 2011

  
• Atomic-scale analysis of plasma-surface interactions and feature profile evolution during Si etching in halogen-based plasmas: Monte Carlo and molecular dynamics approaches

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  The 10th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 23rd Symposium on Plasma Science for Materials (SPSM), 2011, Peer-reviewed

  
• PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching

  Yoshinori Takao; Kenji Matsuoka; Koji Eriguchi; Kouichi Ono

  27TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS, 2010, PTS ONE AND TWO, 2011, Peer-reviewed

  Access this misc :

  
• Surface Roughness Formation during Si Etching in Chlorine-based Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (2WPNI), 2011, Peer-reviewed

  
• Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas: Atomic-scale Analysis of Three-dimensional Feature Profile Evolution

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. The 4th International Conference on Plasma Nano-Technology & Science (IC-PLANTS), 2011, Peer-reviewed

  
• Molecular Dynamics Analysis of Ion Incident Energy and Angle Dependence of Si etching with Cl, Br, and HBr beams

  N. Nakazaki; H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. 33rd International Symposium on Dry Process (DPS), 2011, Peer-reviewed

  
• Numerical Simulation of Capacitively Coupled Chlorine Plasma Using Two-dimensional Particle-in-cell/Monte Carlo Method

  K. Matsuoka; Y. Takao; K. Eriguchi; K. Ono

  Proc. 33rd International Symposium on Dry Process (DPS), 2011, Peer-reviewed

  
• Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. 33rd International Symposium on Dry Process (DPS), 2011, Peer-reviewed

  
• Prediction of Parameter Fluctuation Induced by Plasma Charging Damage in high-k MOSFET

  K. Eriguchi; M. Kamei; Y. Takao; K. Ono

  Ext. Abs. 2011 Int. Workshop on Dielectric Thin Films for Future Electron Devices, Science and Technology (IWDTF), pp. 33-34, 2011, Peer-reviewed

  
• Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate

  A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono

  Proc. 33rd International Symposium on Dry Process (DPS 2011), pp. 159-160, 2011, Peer-reviewed

  
• Microwave-excited microplasma thruster with applied magnetic field

  Kawanabe, Testuo; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  IEPC Paper,, p. 262, 2011

  
• Two-Dimensional Particle-in-Cell Simulation of a Micro RF Ion Thruster

  Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  IEPC Paper,, p. 076, 2011

  
• A new prediction model for effects of plasma-induced damage on parameter variations in advanced LSIs

  Koji Eriguchi; Yoshinori Takao; Kouichi Ono

  2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011, 2011, Peer-reviewed

  
• PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching

  Yoshinori Takao; Kenji Matsuoka; Koji Eriguchi; Kouichi Ono

  27TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS, 2010, PTS ONE AND TWO, 2011, Peer-reviewed

  
• 11-GHz Microwave-Excited Microplasma Source for Electrothermal Thruster

  Takahashi, Takeshi; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  Bulletin of the American Physical Society,55 (7), p. 97, Oct. 2010

  
• Particle Simulations of Sheath dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges

  Takao, Yoshinori; Matsuoka, Kenji; Eriguchi, Koji; Ono, Kouichi

  Bulletin of the American Physical Society,55 (7), p. 20, Oct. 2010

  
• Atomic-scale analysis of plasma-surface interactions and feature profile evolution by molecular dynamics approaches

  H. Tsuda; T. Nagaoka; Y. Takao; K. Eriguchi; K. Ono

  Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), 2010, Peer-reviewed

  
• In Situ Fourier Transform Infrared Diagnostics of Surface Reaction Layer and Reaction Products in Cl2 Plasma Etching

  H. Miyata; H. Tsuda; Takao; K. Eriguchi; K. Ono

  Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), 2010, Peer-reviewed

  
• Molecular Dynamics Analysis of Surface Roughness during Si Etching in Chlorine-Based Plasmas

  H. Tsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. 32nd International Symposium on Dry Process (DPS), 2010, Peer-reviewed

  
• Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters

  K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono

  Proc. The 3rd Int. Conf. on Plasma-Nano Technology & Science (ICPLANTS), 2010, Peer-reviewed

  
• Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites

  Y. Nakakubo; A. Matsuda; Y. Takao; K. Eriguchi; K. Ono

  Proc. 32nd International Symposium on Dry Process (DPS), pp. 173-174, 2010, Peer-reviewed

  
• Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies

  K. Eriguchi; Y. Nakakubo; A. Matsuda; Y. Takao; K. Ono

  Proc. 32nd International Symposium on Dry Process (DPS), pp. 185-186, 2010, Peer-reviewed

  
• Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and their Effects on Off-State Leakage Current of MOSFETs

  M. Kamei; Y. Takao; K. Eriguchi; K. Ono

  Proc. 32nd International Symposium on Dry Process (DPS), pp. 189-190, 2010, Peer-reviewed

  
• Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature- Controlled Photoreflectance Spectroscopy

  A. Matsuda; Y. Nakakubo; Y. Takao; K. Eriguchi; K. Ono

  Proc. 32nd International Symposium on Dry Process (DPS), pp. 191-192, 2010, Peer-reviewed

  
• Numerical Analysis of a Micro Ion Thruster Using PIC/MCC Model

  Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

  AIAA Paper,, p. 6947, 2010

  
• Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs

  Koji Eriguchi; Masayuki Kamei; Yoshinori Takao; Kouichi Ono

  2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, 2010, Peer-reviewed

  
• Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity

  H. Tsuda; M. Mori; K. Eriguchi; K. Ono

  Proc. 31st International Symposium on Dry Process (DPS), 2009, Peer-reviewed

  
• Microwave-Excited Microplasma Thruster: Design Improvement for Implementation to Satellite

  T. Takahashi; S. Kitanishi; Y. Takao; K. Eriguchi; K. Ono

  31st International Electric Propulsion Conference (IEPC), 2009, Peer-reviewed

  
• Microwave-Excited Microplasma Thruster: Design of Improved Model Aiming for Flight

  T. Takahashi; Y. Ichida; S. Kitanishi; K. Eriguchi; K. Ono

  27th International Symposium on Space Technology and Science (ISTS), 2009, Peer-reviewed

  
• Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs

  K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2009, Peer-reviewed

  
• Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs

  K. Eriguchi; Y. Nakakubo; A. Matsuda; M. Kamei; Y. Takao; K. Ono

  Proc. 31st International Symposium on Dry Process (DPS), 2009, Peer-reviewed

  
• Optical and Electrical Characterization of H2 Plasma-Damaged Si Surface Structures and its Impact on In-line Monitoring

  Y. Nakakubo; A. Matsuda; M. Fukasawa; Y. Takao; T. Tatsumi; K. Eriguchi; K. Ono

  Proc. 31st International Symposium on Dry Process (DPS), 2009, Peer-reviewed

  
• Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects

  A. Matsuda; Y. Nakakubo; M. Kamei; Y. Takao; K. Eriguchi; K. Ono

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2009, Peer-reviewed

  
• Study of Plasma-Induced "Si Recess Structure" and Its Effects on Threshold Voltage Variability in Advanced MOSFETs

  Koji Eriguchi; Asahiko Matsuda; Yoshinori Nakakubo; Masayuki Kamei; Hiroaki Ohta; Kouichi Ono

  2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, Peer-reviewed

  
• Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis

  Asahiko Matsuda; Yoshinori Nakakubo; Riki Ogino; Hiroaki Ohta; Koji Eriguchi; Kouichi Ono

  2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, Peer-reviewed

  
• Atomic-scale simulation of Si etching by energetic Br+ and Br2+ ions for the analysis of Gate- or STI-etching processes

  T. Nagaoka; H. Ohta; K. Eriguchi; K. Ono

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2008, Peer-reviewed

  
• Analysis of Microwave-excited Plasma Thrusters with Hydrogen Propellant

  Y. Ichida; T. Takahashi; Y. Takao; K. Eriguchi; K. Ono

  26th International Symposium on Space Technology and Science (ISTS), 2008, Peer-reviewed

  
• Numerical Simulation of a Microwave-Excited Microplasma Thruster

  T. Takahashi; Y. Ichida; Y. Takao; K. Eriguchi; K. Ono

  26th International Symposium on Space Technology and Science (ISTS), 2008, Peer-reviewed

  
• Significance of Interface Layer between Surface Layer and Si Substrate in Plasma-Exposed Structures and Its Impacts on Plasma-Induced Damage Analysis

  A. Matsuda; Y. Nakakubo; Y. Ueda; H. Ohta; K. Eriguchi; K. Ono

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2008, Peer-reviewed

  
• Threshold voltage shift instability induced by plasma charging damage in MOSFETs with high-k dielectric

  K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono

  2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Peer-reviewed

  
• Analysis of Si substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies

  Y. Nakakubo; A. Matsuda; M. Kamei; H. Ohta; K. Eriguchi; K. Ono

  2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Peer-reviewed

  
• Analysis of plasma-surface interactions during etching of Si and high-k HfO2 films by in-situ diagnostics of reactants and reaction products

  Y. Ueda; M. Yoshida; K. Eriguchi; K. On

  18th International Symposium on Plasma Chemistry (ISPC-18), 2007

  
• Effects of geometrically different microstructures on etching profiles

  H. Fukumoto; K. Eriguchi; K. Ono

  18th International Symposium on Plasma Chemistry (ISPC-18), 2007

  
• Numerical analysis and optical diagnostics of a microwave-excited plasma source for microthrusters

  T. Takahashi; Y. Takao; K. Eriguchi; K. Ono

  18th International Symposium on Plasma Chemistry (ISPC-18), 2007

  
• Etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing

  D. Hamada; K. Nakamura; K. Eriguchi; K. Ono

  18th International Symposium on Plasma Chemistry (ISPC-18), 2007

  
• Model analysis of ion reflection on feature surfaces and profile evolution during Si etching in chlorine-and bromine containing plasmas

  S. Irie; Y. Osano; M. Mori; K. Eriguchi; K. Ono

  18th International Symposium on Plasma Chemistry (ISPC-18), 2007

  
• Selective etching of high-k dielectric HfO2 films in BCl3-containing plasmas without rf biasing

  Y. Ueda; K. Nakamura; D. Hamada; M. Yoshida; K. Eriguchi; K. Ono

  Proc. 29th International Symposium on Dry Process (DPS), 2007, Peer-reviewed

  
• Profile simulation model including ion reflection on feature surfaces during plasma etching

  S. Irie; Y. Osano; M. Mori; K. Eriguchi; K. Ono

  Proc. 29th International Symposium on Dry Process (DPS), 2007, Peer-reviewed

  
• Etching of high-k dielectric HfO2 films in BCl3/Cl2/O2 plasmas without rf biasing

  D. Hamada; K. Osari; K. Nakamura; K. Eriguchi; K. Ono; M. Oosawa; K. Sakoda; S. Hasaka; M. Inoue

  Proc. 29th International Symposium on Dry Process (DPS), 2007, Peer-reviewed

  
• A model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

  M. Mori; S. Irie; N. Itabashi; K. Eriguchi; K. Ono

  Proc. 29th International Symposium on Dry Process (DPS), 2007, Peer-reviewed

  
• A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO2 Gate Dielectrics

  K. Eriguchi; M. Kamei; D. Hamada; K. Okada; K. Ono

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2007, Peer-reviewed

  
• Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers

  K. Eriguchi; A. Ohno; D. Hamada; M. Kamei; H. Fukumoto; K. Ono

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2007, Peer-reviewed

  
• Scaling of Plasma-Induced Defect Generation Probability in Si: Effects of Bias Voltage at Single- and Superposed-Frequencies

  Y. Nakakubo; Y. Ueda; M. Yoshida; D. Hamada; M. Kamei; K. Eriguchi; K. Ono

  Proc. 29th International Symposium on Dry Process (DPS), 2007, Peer-reviewed

  
• Mechanisms for junction degradation of advanced MOSFETs induced by plasma processing

  Masayuki Kamei; Koji Eriguchi; Kenji Okada; Kouichi Ono

  2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2007, Peer-reviewed

  
• Plasma etching of high-k and metal gate materials in high-density chlorine-containing plasma

  K. Nakamura; K. Osari; T. Kitagawa; K. Takahashi; K. Eriguchi; K. Ono

  Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP), 2006

  
• Impact of boron penetration from S/D-extension on gate-oxide reliability for 65-nm node CMOS and beyond

  T Yamashita; K Ota; K Shiga; Hayashi, I; H Umeda; H Oda; T Eimori; M Inuishi; Y Ohji; K Eriguchi; K Nakanishi; H Nakaoka; T Yamada; M Nakamura; Miyanaga, I; A Kajiya; M Kubota; M Ogura

  2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, Peer-reviewed

  
• FIS構造における界面Siのフォトレフレクタンス分光法による評価 (2)

  神田浩文; 寒川雅之; 北井聡; 児玉一志; 豊島吉英; 金島岳; 奥山雅則; 藤本晶; 江利口浩二

  応用物理学関係連合講演会講演予稿集, 27 Mar. 2002

  
• A novel bi-layer cobalt silicide process with nitrogen implantation for sub-50nm CMOS and beyond

  K Itonaga; K Eriguchi; Miyanaga, I; A Kajiya; M Ogura; T Tsutsumi; H Sayama; H Oda; T Eimori; H Morimoto

  2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, Peer-reviewed

  
• Sub-1 mu m high density embedded SRAM technologies for 100nm generation SOC and beyond

  K Tomita; K Hashimoto; T Inbe; T Oashi; K Tsukamoto; Y Nishioka; M Matsuura; T Eimori; M Inuishi; Miyanaga, I; M Nakamura; T Kishimoto; T Yamada; K Eriguchi; H Yuasa; T Satake; A Kajiya; M Ogura

  2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, Peer-reviewed

  
• 高誘電率ゲート絶縁膜/Si界面のフォトレフレクタンス分光法による評価

  寒川雅之; 神田浩文; 北井聡; 上野正人; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  応用物理学関係連合講演会講演予稿集, 28 Mar. 2001

  
• Fabrication if metal gate electrode by reactive sputtering deposition

  YAMADA Takayuki; MORIWAKI Masaru; HARADA Yoshinao; ERIGUCHI Koji

  應用物理, 10 Sep. 2000

  
• フォトレフレクタンス分光法を用いたSi/SiO₂界面の応力評価

  寒川雅之; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  応用物理学会学術講演会講演予稿集, 03 Sep. 2000

  
• フォトレフレクタンス分光法によるSiO₂/Si界面の歪みの解析

  阿形眞司; 寒川雅之; 江利口浩二; 藤本晶; 金島岳; 山下馨; 奥山雅則

  応用物理学関係連合講演会講演予稿集, 28 Mar. 2000

  
• Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance

  M. Sougawa; T. Kanashima; M. Agata; K. Yamashita; M. Okuyama; A. Fujimoto; K. Eriguchi

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 2000, Peer-reviewed

  
• Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy

  M Agata; M Sogawa; O Maida; K Eriguchi; A Fujimoto; T Kanashima; M Okuyama

  2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 2000, Peer-reviewed

  
• Impacts of strained SiO2 on TDDB lifetime projection

  Y Harada; K Eriguchi; M Niwa; T Watanabe; Ohdomari, I

  2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, Peer-reviewed

  
• フォトレフレクタンス分光法によるSiの歪みの解析

  阿形真司; 江利口浩二; 藤本晶; 金島岳; 山下馨; 奥山雅則

  応用物理学会学術講演会講演予稿集, 01 Sep. 1999

  
• ゲート酸化膜に導入されたチャージングダメージのフォトレフレクタンス評価

  阿形真司; 鈴木正志; 和田秀夫; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  応用物理学関係連合講演会講演予稿集, 28 Mar. 1999

  
• Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

  M. Agata; H. Wada; O. Maeda; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama

  Extended Abstracts of Int. Conf. Solid State Devices and Materials (SSDM), 1999, Peer-reviewed

  
• Photoreflectance Analysis of Si(111) with Different Flatness.

  阿形真司; 和田秀夫; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  電子情報通信学会技術研究報告, 10 Dec. 1998

  
• The Dependence of Photoreflectance Signal on Si Surface Treatment.

  阿形真司; 和田秀夫; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  応用物理学会学術講演会講演予稿集, Sep. 1998

  
• Characterization of RIE-Induced Defect Density in Si by Photoreflectance Spectroscopy.

  和田秀夫; 阿形真司; 藤本晶; 江利口浩二; 金島岳; 奥山雅則

  応用物理学会学術講演会講演予稿集, Sep. 1998

  
• In-situ Characterization of Si in liquid by Photoreflectance Spectroscopy.

  和田秀夫; 阿形真司; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  応用物理学関係連合講演会講演予稿集, Mar. 1998

  
• Photoreflectance spectroscopic technique: A new model for estimation of plasma-induced defect density in Si substrate

  H Wada; K Eriguchi; A Fujimoto; T Kanashima; M Okuyama

  1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, Peer-reviewed

  
• Contactless Characterization of Plasma-Induced Damage in Si Substrate by Photoreflectance Spectroscopy

  H. Wada; M. Agata; K. Eriguchi; A. Fujimoto; T. Kanashima; M. Okuyama

  Proc. 20th International Symposium on Dry Process (DPS), 1998, Peer-reviewed

  
• Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability

  Y Kosaka; K Eriguchi; T Yamada

  1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, Peer-reviewed

  
• In-situ Characterization of Plasma-damaged Si by Photoreflectance Spectroscopy.

  和田秀夫; 江利口浩二; 藤本晶; 金島岳; 奥山雅則

  電子情報通信学会技術研究報告, 12 Dec. 1997

  
• A new evaluation technique of plasma-induced si substrate damage by photoreflectance spectroscopy

  K Eriguchi; T Imai; A Asai; M Okuyama

  1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, Peer-reviewed

  
• Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

  K Eriguchi; T Yamada; Y Kosaka; M Niwa

  1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL, 1997, Peer-reviewed

  
• Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region

  M. Takase; K. Eriguchi; B. Mizuno

  Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 1996, Peer-reviewed

  
• Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress

  K. Eriguchi; Y. Uraoka

  Extended Abstract of Int. Conf. Solid State Devices and Materials (SSDM), 1995, Peer-reviewed

  
• LISSAJOUS ELECTRON-PLASMA ETCHING FOR SUBHALF MICRON LSI

  M OHKUNI; M KUBOTA; NAKAYAMA, I; K ERIGUCHI; T TAMAKI; K HARAFUJI; N NOMURA; S SIVARAM

  1993 SYMPOSIUM ON VLSI TECHNOLOGY, 1993, Peer-reviewed

  
• EVALUATION TECHNIQUE OF GATE OXIDE DAMAGE

  Y URAOKA; K ERIGUCHI; T TAMAKI; K TSUJI

  ICMTS 93 : PROCEEDINGS OF THE 1993 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1992, Peer-reviewed

  
• Reliability Projecting for ReRAM based on Stochastic Differential Equation (集積回路)

  魏 志強; 江利口 浩二; 村岡 俊作; 片山 幸治; 安原 隆太郎; 河合 健; 早川 幸夫; 島川 一彦; 三河 巧; 米田 慎一

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 14 Apr. 2016

  
• 先端プロセスとプラズマ誘起ダメージ (特集 プラズマプロセスの新しい応用)

  江利口 浩二

  ケミカルエンジニヤリング, Dec. 2013

  

Presentations

• Time-dependent dielectric breakdown characterization of bulk boron nitride films in sp2-phase prepared by a reactive plasma assisted coating method

  Y. Asamoto; M. Noma; S. Hasegawa; M. Yamashita; K. Urabe; K. Eriguchi

  2024 International Conference on Solid State Devices and Materials (SSDM2024), 2024

  
• Diagnostics of Plasma Parameters and Surface Impedance by Measuring AC Probe Current at Harmonic Frequencies

  J. Morozumi; K. Eriguchi; K. Urabe

  AVS 70th International Symposium & Exhibition, 2024

  
• Investigation of Highly Diffusive Point Defects During Si Plasma Etching

  N. Kuboi; K. Saga; M. Miyoshi; T. Hamano; S. Kobayashi; T. Tatsumi; K. Eriguchi; Y. Hagimoto; H. Iwamoto

  AVS 70th International Symposium & Exhibition, 2024

  
• Effects of Si/N Ratio on Plasma-induced Damage Creation in Silicon Nitride Films

  T. Goya; K. Urabe; K. Eriguchi

  AVS 70th International Symposium & Exhibition, 2024

  
• Characterization scheme for plasma-induced damage analysis of dielectric films with pre-existing defects

  S. Kuronuma; K. Urabe; K. Eriguchi

  45th International Symposium on Dry Process: DPS2024, 2024

  
• Electrical and mechanical property changes of Si-rich SiN films due to plasma exposure: Experimental and first-principles calculation study

  T. Goya; K. Urabe; K. Eriguchi

  45th International Symposium on Dry Process: DPS2024, 2024

  
• Effect of low-energy ion irradiation during deposition on dielectric breakdown of hexagonal boron nitride films

  Y. Asamoto; M. Noma; S. Hasegawa; M. Yamashita; K. Urabe; K. Eriguchi

  45th International Symposium on Dry Process: DPS2024, 2024

  
• Prediction of ion irradiation-induced defect creation in ultimately scaled devices based on stochastic process

  K. Eriguchi; K. Urabe

  44th International Symposium on Dry Process: DPS2023, 2023

  
• Characterization of H2-plasma-induced damage in InP substrates using optical and electrical methods

  T. Goya; A. Kawashima; K. Urabe; K. Eriguchi

  44th International Symposium on Dry Process: DPS2023, 2023

  
• Quantitative Characterization of Plasma-Induced Defect Creation in InP Substrates Using Conductance Analysis

  T. Goya; Y. Kodama; A. Kawashima; Y. Zaizen; M. Fukasawa; K. Urabe; K. Eriguchi

  AVS 68th International Symposium & Exhibition, 2022

  
• Characterization of nano-network structure transition of boron nitride films by ion irradiation during the film growth

  T. Hamano; T. Matsuda; Y. Asamoto; M. Noma; S. Hasegawa; M. Yamashita; K. Urabe; K. Eriguchi

  43rd International Symposium on Dry Process: DPS2022, 2022

  
• In-situ electrical monitoring of SiO2/Si structures in low-temperature plasma using impedance spectroscop

  J. Morozumi; T. Goya; K. Eriguchi; K. Urabe

  43rd International Symposium on Dry Process: DPS2022, 2022

  
• Characterization methods of plasma process-induced damage to InP structures

  T. Goya; Y. Kodama; A. Kawashima; Y. Zaizen; M. Fukasawa; K. Urabe; K. Eriguchi

  43rd International Symposium on Dry Process: DPS2022, 2022

  
• Electrical characterization of exposure time dependence of plasma-induced radiation damage to SiO2 films: Early-stage degradation turnover in the progressive phase

  T. Kuyama; S. Yura; K. Urabe; K. Eriguchi

  42nd International Symposium on Dry Process: DPS2021, 2021

  
• A comprehensive analysis of defect state generation by ion bombardment at bottoms and sidewalls of deep holes in Si substrates

  T. Hamano; K. Urabe; K. Eriguchi

  42nd International Symposium on Dry Process: DPS2021, 2021

  
• A nanoindentation-based statistical evaluation scheme for mechanical change in plasma-irradiated dielectric films

  T. Goya; T. Kuyama; K. Urabe; K. Eriguchi

  42nd International Symposium on Dry Process: DPS2021, 2021

  
• Behaviors of metastable-state argon ion density in an electron cyclotron resonance plasma source measured by laser-induced fluorescence spectroscopy

  S. Kito; K. Eriguchi; K. Urabe

  42nd International Symposium on Dry Process: DPS2021, 2021

  
• Characterization of carrier conduction in a magnetically-confined vacuum arc discharge and its application to control of incident-ion flux to a substrate

  Y. Asamoto; T. Matsuda; T. Hamano; M. Noma; S. Hasegawa; M. Yamashita; K. Urabe; K. Eriguchi

  42nd International Symposium on Dry Process: DPS2021, 2021

  
• Controlling of nano-network structures in BN films by a reactive plasma assisted-coating technique and the sputtering characteristics against plasma exposure

  T. Matsuda; T. Hamano; Y. Asamoto; M. Noma; S. Hasegawa; M. Yamashita; K. Urabe; K. Eriguchi

  42nd International Symposium on Dry Process: DPS2021, 2021

  
• Plasma-Induced Damage: Modeling and Characterization

  K. Eriguchi

  2022 IEEE International Integrated Reliability Workshop (IIRW), 10 Oct. 2022, Invited

  
• Plasma-induced damage

  K. Eriguchi

  2021 IEEE International Integrated Reliability Workshop (IIRW), Reliability Experts Forum, 19 Oct. 2021, Invited

  
• Comprehensive Characterization of Surface Modification Mechanisms in Boron Nitride Films Prepared by a Reactive Plasma-assisted Coating Technique

  K. Eriguchi; M. Noma; M. Yamashita; K. Urabe; S. Hasegawa

  The 47th ICMCTF, 28 Apr. 2021, Invited

  
• Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS)

  T. Kuyama; K. Urabe; K. Eriguchi

  IEEE Int. Reliability Physics Symp (IRPS), 24 Mar. 2021

  
• Plasma-induced Damage—Modeling and Characterizations

  K. Eriguchi

  International Symposium on Semiconductor Manufacturing (ISSM 2020), 15 Dec. 2020, Invited

  
• Characterization Scheme for Plasma-Induced Defect due to Stochastic Lateral Straggling in Si Substrates for Ultra-Low Leakage Devices

  Y. Sato; T. Yamada; K. Nishimura; M. Yamasaki; M. Murakami; K. Urabe; K. Eriguchi

  IEEE International Electron Devices Meeting (IEDM), 14 Dec. 2020

  
• Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance

  T. Hamano; K. Urabe; K. Eriguchi

  International Conference on Simulation of Semiconductor Processes and Devices, 06 Oct. 2020

  
• A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates

  T. Hamano; K. Urabe; K. Eriguchi

  Proc. 52nd International Conference on Solid State Devices and Materials (SSDM), 27 Sep. 2020

  
• Plasma-induced Damage-modeling, Characterizations, and Design Methodologies

  Koji Eriguchi

  IEEE Int. Reliability Physics Symp (IRPS), May 2020, Invited

  
• Characterization of dynamic behaviors of defects in Si substrates created by H2 plasma using conductance method

  T. Kuyama; K. Urabe; Masanaga Fukasawa; Tetsuya Tatsumi; K. Eriguchi

  41st International Symposium on Dry Process: DPS2019, November 21-22, 2019, JMS Aster plaza, Hiroshima, Japan, Nov. 2019

  
• Characterization of dynamic behaviors of carrier traps in silicon nitride films created by Ar and He plasma exposures

  T. Kuyama; Keiichiro Urabe; Koji Eriguchi

  International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY – : IWDTF2019, November 18-20, Multi-Purpose Digital Hall, Tokyo Institute of Technology, Tokyo, Japan, S1-1 (2019), Nov. 2019

  
• Modeling and controlling of defect generation in electronic devices during plasma etching processes—an optimization methodology of plasma-induced damage

  Koji Eriguchi

  The 72nd Annual Gaseous Electronics Conference (GEC), October 28-November 01, 2019, the Texas A&M Hotel and Conference Center in College Station, Texas, DT2-3 (Oct. 29, 2019), Oct. 2019, Invited

  
• Comprehensive Reconsideration of Material Property Modification by Processing Plasma Exposure and Its Optimal Control Strategy

  T. Hamano; T. Sumihira; K. Urabe; K. Eriguchi

  32nd International Microprocesses and Nanotechnology Conference: MNC2019, Octorber 28-31, 2019, International Conference Center Hiroshima, Hiroshima, Japan. (2019), Oct. 2019

  
• Impacts of plasma process-induced damage on future devices

  Koji Eriguchi

  The 12th Asian-European International Conference on Plasma Surface Engineering– AEPSE2019. S3-KN01, Sept. 02-05, Jeju Isand, Korea, Sep. 2019, Invited

  
• Effects of Variability in Plasma-Induced Damage to Si Substrate on Device Performance and Its Application to Variability Assessment Methodology

  T. Hamano; K. Urabe; K. Eriguchi

  51st International Conference on Solid State Devices and Materials: SSDM2019, Sep. 2019

  
• Characterization of Surface Modification Mechanisms for Boron Nitride Films under Plasma Exposure

  T. Higuchi; M. Noma; M. Yamashita; K. Urabe; S. Hasegawa; K. Eriguchi

  ICMCTF-46 2019, 23 May 2019

  
• プラズマプロセスにおける欠陥形成過程のモデリングと予測

  江利口 浩二

  第206回応用物理学会シリコンテクノロジー分科会研究会, 09 Feb. 2018, Invited

  
• Defect Generation in Si substrates during Plasma Processing

  Koji Eriguchi

  17th International Workshop on Junction Technology 2017, 02 Jun. 2017, Invited

  
• Model prediction of stochastic effects of plasma-induced damage in advanced electronic devices

  Koji Eriguchi

  6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, 24 May 2017, Invited

  
• Impacts of plasma process-induced damage on MOSFET parameter variability and reliability

  Koji Eriguchi

  The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 07 Oct. 2015, Invited

  
• Modeling of Plasma‐induced Damage in Advanced Transistors in ULSI Circuits

  Koji Eriguchi

  Semicon Korea - S4. Plasma Science and Etching Technology, 05 Feb. 2015, SEMI, Invited

  
• Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits—A model prediction of damage in three dimensional structures—

  Koji Eriguchi

  67th Annual Gaseous Electronics Conference, 04 Nov. 2014, American Physical Society, Invited

  
• Modeling as a powerful tool for understanding surface damage during plasma processing of materials

  Koji Eriguchi

  Plasma Etch and Strip in Microtechnology (PESM), 15 Mar. 2013, IMEC, Invited

  
• High-k MOSFET performance degradation by plasma process-induced charging damage

  Koji Eriguchi

  IEEE International Integrated Reliability Workshop, Oct. 2012, IEEE, Invited

  
• Modeling of Parameter Fluctuation Induced by Plasma Process Damage in Metal-Oxide-Semiconductor Field-Effect Transistors

  Koji Eriguchi

  19th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 1-4, 2011, IEEK, IEICE, Invited

  
• Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices

  Koji Eriguchi

  AVS 57th International Symposium & Exhibition, PS-WeM9, 2010, American Vacuum Society, Invited

  
• Plasma-induced damage and its impacts on the reliability of advanced semiconductor devices

  Koji Eriguchi

  Proc. The 6th Int. Conf. Reactive Plasmas (ICRP) / 23rd Symp. Plasma Process (SPP), 2006, The Japan Society of Applied Physics, Invited

  
• Plasma-Induced Damage & Its Impact on Device Reliability

  Koji Eriguchi

  IEEE-International Conference on Integrated Circuit Design & Technology (ICICDT), 2005, IEEE, Invited

  
• Reliability Concerns of Plasma Process Induced Oxide Charging Damage in MOS Devices

  Koji Eriguchi

  Semiconductor Equipment and Materials International (SEMI) Technology Symposium 97, 1997, Invited

  

Books and Other Publications

• 最新 実用真空技術総覧

  江利口 浩二, Contributor, 第3編 薄膜, 第7章 ドライエッチング

  (株)エヌ・ティー・エス, 2019, Feb. 2019, Not refereed

  
• 先端CMOS/メモリデバイスにおけるプラズマ加工技術の現状と課題

  江利口 浩二; 占部継一郎, Joint work

  応用物理 第87巻 第12号, Dec. 2018, Not refereed

  
• 真空科学ハンドブック

  江利口 浩二, Contributor, 6.2 プラズマプロセス

  株式会社コロナ社(日本真空学会 編), Feb. 2018, Not refereed

  
• プラズマプロセス技術

  江利口 浩二, Contributor, 第4章 4.4

  森北出版株式会社, 2017, Not refereed

  
• プラズマプロセスの新しい応用

  江利口 浩二, Contributor, 先端プロセスとプラズマ誘起ダメージ

  ケミカルエンジニヤリング, 2013, Not refereed

  
• Molecular Dynamics – Studies of Synthetic and Biological Macromolecules

  Koji Eriguchi, Contributor, Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

  InTech, 2012, Not refereed

  
• Emerging Technologies and Circuits", Lecture Notes in Electrical Engineering

  K. Eriguchi; M. Kamei; K. Okada; H. Ohta; K. Ono, Contributor, Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETS with High-K Dielectric

  Springer, 2010, Not refereed

  
• 半導体プロセスにおけるチャージング・ダメージ

  江利口 浩二, Contributor, チャージングによるMOSデバイスのゲート酸化膜劣化

  リアライズ社, 1996, Not refereed

  
• ロジックLSI技術の革新

  江利口 浩二, Contributor, アンテナ効果ダメージと評価技術

  サイエンスフォーラム社, 1995, Not refereed

  

Awards

• 2010

  応用物理学会, The 32nd International Symposium on Dry Process Best Paper Award
• 2011

  応用物理学会, 2011年度　応用物理学会優秀論文賞
• Mar. 2011

  応用物理学会, 第９回（2010）プラズマエレクトロニクス（ＰＥ）賞
• 05 Nov. 2015

  応用物理学会, DPS Paper Award 2015
• Mar. 2021

  応用物理学会, 第19回プラズマエレクトロニクス賞

External funds: Kakenhi

• Effects of dielectric loss mechanisms at electron trapping sites on damage recovery and reliability improvement in thin films

  Grant-in-Aid for Challenging Research (Exploratory)

  Medium-sized Section 28:Nano/micro science and related fields

  Kyoto University

  Koji Eriguchi

  From 09 Jul. 2021, To 31 Mar. 2023, Project Closed

  欠陥;マイクロ波照射;シリコン窒化膜;電気容量;マイクロ波;窒化ホウ素膜;トンネルリーク電流;微分電気容量;ナノ欠陥構造;窒化シリコン;窒化ホウ素;電磁波照射

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21K18875/
• Design of sp-bonds in functional BN films by arc discharge with independent parameter control

  Grant-in-Aid for Scientific Research (B)

  Basic Section 26050:Material processing and microstructure control-related

  Kyoto University

  Koji Eriguchi

  From 01 Apr. 2020, To 31 Mar. 2023, Project Closed

  窒化ホウ素;プラズマ;結合状態;光学特性;電気特性;高密度プラズマ;トンネルリーク電流;イオンエネルギー;フラックス;エネルギー;誘電率

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20H02481/
• Reliability evaluation and characteristic prediction in microfluidic devices applying stochastic process of random fluctuation problem

  Grant-in-Aid for Challenging Research (Exploratory)

  Kyoto University

  Kazuya Tatsumi

  From 30 Jun. 2017, To 31 Mar. 2019, Project Closed

  粒子と細胞;誘電泳動力;位置決めとタイミング制御;分取技術;マイクロ流路;ゆらぎと確率論;マイクロ流体工学;確率論;信頼性評価;精度予測;粒子運動制御;高速分取;信頼性と性能の評価と予測;ゆらぎ;確率微分方程式;粒子と細胞の運動制御;マイクロデバイス;信頼性工学;細胞分取

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17K18841/
• Study of defect generation processes in nano-scale devices and the deign methodology based on stochastic theory

  Grant-in-Aid for Challenging Exploratory Research

  Kyoto University

  Koji Eriguchi

  From 01 Apr. 2016, To 31 Mar. 2019, Project Closed

  プラズマ処理;表面処理;ナノ構造;確率過程;欠陥

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16K14405/
• Study of structure modification of boron nitride films by plasma exposure - the effect of ion energy distribution function

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Koji Eriguchi

  From 01 Apr. 2015, To 31 Mar. 2018, Project Closed

  プラズマ;結晶・組成制御;ナノ材料;材料加工・処理

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15H04159/
• Plasma-Induced Formation of Nanoscale Ripple Structures on Surfaces

  Grant-in-Aid for Scientific Research (B)

  Osaka University;Kyoto University

  Kouichi ONO

  From 01 Apr. 2015, To 31 Mar. 2018, Project Closed

  プラズマ加工;プラズマ化学;表面・界面物性;半導体超微細化;微細加工形状;反応粒子輸送;プラズマエッチング;プラズマ・表面過程揺動;超微細加工形状

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15H03582/
• Study of plasma-solid surface interaction control for future organic devices with the optimized dielectric constants

  Grant-in-Aid for Challenging Exploratory Research

  Kyoto University

  Koji ERIGUCHI

  From 01 Apr. 2013, To 31 Mar. 2016, Project Closed

  プラズマ;誘電率;欠陥;有機膜;シリコン;有機材料;電気容量

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-25630293/
• Study of defect-related dielectric function change and the process optimiztion framework for ultimately low power systems

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Koji ERIGUCHI

  From 01 Apr. 2011, To 31 Mar. 2014, Project Closed

  プラズマ;表面・界面制御;極低消費電力;欠陥;誘電率;シリコン;トランジスタ;欠陥構造;電気容量;分子動力学法;変調反射率分光;分子動力学;表面・界面;プラズマプロセス;欠陥層;電子;ナノ材料

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360321/
• Plasma-Surface Interactions for Nanometer-scale Plasma Etching Processes

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Kouicti ONO

  From 01 Apr. 2009, To 31 Mar. 2012, Project Closed

  プラズマ加工;プラズマ化学;表面・界面物性;半導体超微細化;超微細加工形状;プラズマエッチング;反応生成物;表面ラフネス

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21340169/
• Plasma-Surface Interactions during Plasma Etching for Next-Generation Nanoscale Device Fabrication

  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

  Science and Engineering

  Kyoto University

  Kouichi ONO

  From 23 Jul. 2009, To 31 Mar. 2014, Project Closed

  プラズマ加工;プラズマ化学;表面・界面物性;半導体超微細化;超微細加工技術;反応粒子輸送;プラズマエッチング;プラズマ・表面過程揺動;超微細加工形状

  https://kaken.nii.ac.jp/grant/KAKENHI-PLANNED-21110008/
• Plasma process design for material surface treatment in the nano-scale regime utilizing dielectric-constant analysis techniques

  Grant-in-Aid for Scientific Research (B)

  Kyoto University

  Koji ERIGUCHI

  From 01 Apr. 2008, To 31 Mar. 2011, Project Closed

  表面界面改質;誘電率;プラズマ;シリコン;欠陥;トランジスタ;誘電関数;レーザー;欠陥層;界面層;分子動力学;電気容量

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20360329/
• マイクロプラズマスラスタの研究開発:高温反応場と高速流れ場の競合現象の解明と制御

  Grant-in-Aid for Scientific Research on Priority Areas

  Science and Engineering

  Kyoto University

  斧 高一

  From 01 Apr. 2006, To 31 Mar. 2008, Project Closed

  マイクロプラズマ;マイクロノズル;プラズマスラスタ;マイクロ波励起プラズマ;軸対称表面波励起プラズマ;亜音速・超音速流れ揚;高温反応揚;MEMS;亜音速・超音速流れ場;高温反応場

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18030007/
• A Study of Plasma Chemistry in the Gas Phase and on Surfaces during Plasma Etching in Chlorine-and Bromine-Containing Plasmas

  Grant-in-Aid for Scientific Research (B)

  KYOTO UNIVERSITY

  Kouichi ONO

  From 01 Apr. 2005, To 31 Mar. 2007, Project Closed

  プラズマ加工;プラズマ化学;表面・界面物性;半導体超微細化;超微細加工形状;反応粒子輸送;プラズマプロセス;エッチング, Plasma Etching;Plasma Chemistry;Surface and Interfaces;Semiconductor Fabrication;Etched Profiles;Transport of Reactive Particles;Plasma Processing;Etching

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17340172/
• 超高密度反応性プラズマ法による窒化ホウ素ナノ結晶集合体構造の信頼性物理の研究

  Grant-in-Aid for Scientific Research (B)

  Basic Section 26050:Material processing and microstructure control-related

  Kyoto University

  江利口 浩二

  From 01 Apr. 2023, To 31 Mar. 2026, Granted

  窒化ホウ素;高密度プラズマ;トンネルリーク電流

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23H01728/
• 超高密度反応性プラズマ法による窒化ホウ素ナノ結晶集合体構造の信頼性物理の研究

  Grant-in-Aid for Scientific Research (B)

  Basic Section 26050:Material processing and microstructure control-related

  Kyoto University

  江利口 浩二

  From 01 Apr. 2023, To 31 Mar. 2026, Granted

  プラズマ;窒化ホウ素;高密度プラズマ;トンネルリーク電流

  https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23K26421/

External funds: others

• プラズマプロセスによるダメージ層形成メカニズムの解明と抑制技術に関する研究

  共同研究（株式会社半導体理工学研究センター）

  From 2006, To 2008

  江利口浩二
• 高感度プラズマダメージ定量解析とデバイス性能劣化モデリングに関する研究

  共同研究（株式会社半導体理工学研究センター）

  From 2009, To 2011

  江利口浩二
• ３次元構造デバイスにおけるプラズマ誘起欠陥形成過程ゆらぎと特性バラツキ増大モデルに関する研究

  共同研究（株式会社半導体理工学研究センター）

  From 01 Aug. 2013, To 31 Jul. 2014

  江利口浩二
• SiO2と比較したHigh-k MOSFETのプラズマ処理による信頼性劣化の解析

  NEDO受託研究

  From 2006, To 2007

  代表

Education

Teaching subject(s)

• From 01 Apr. 2024, To 31 Mar. 2025

  Introduction to Engineering Science A

  5110, Fall, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Fundamentals of Aeroapace Propulsion

  5048, Fall, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Thermodynamics and Statistical Mechanics

  5046, Spring, Faculty of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Seminar on Engineering Science of Ionized Gases

  V401, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Propulsion Engineering, Adv.

  G405, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Advanced Course of Electromagnetism

  N233, Spring, Institute for Liberal Arts and Sciences, 2
• From 01 Apr. 2024, To 31 Mar. 2025

  Master's Thesis

  G499, Year-long, Graduate School of Engineering, 0
• From 01 Apr. 2024, To 31 Mar. 2025

  Experiments and Exercises in Aeronautics and Astronautics I

  G418, Year-long, Graduate School of Engineering, 4
• From 01 Apr. 2024, To 31 Mar. 2025

  Experiments and Exercises in Aeronautics and Astronautics II

  G420, Year-long, Graduate School of Engineering, 4
• From 01 Apr. 2023, To 31 Mar. 2024

  Engineering Exercise in Aeronautics and Astronautics

  5145, Spring, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Fundamentals of Aeroapace Propulsion

  5048, Fall, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Thermodynamics and Statistical Mechanics

  5046, Spring, Faculty of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Propulsion Engineering, Adv.

  G405, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Seminar on Engineering Science of Ionized Gases

  V401, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Advanced Course of Electromagnetism

  N233, Spring, Institute for Liberal Arts and Sciences, 2
• From 01 Apr. 2023, To 31 Mar. 2024

  Engineering Laboratory in Aeronautics and Astronautics 2

  5067, Fall, Faculty of Engineering, 1
• From 01 Apr. 2023, To 31 Mar. 2024

  Engineering Laboratory in Aeronautics and Astronautics 1

  5066, Spring, Faculty of Engineering, 1
• From 01 Apr. 2023, To 31 Mar. 2024

  Graduation Thesis2

  5998, Fall, Faculty of Engineering, 6
• From 01 Apr. 2023, To 31 Mar. 2024

  Graduation Thesis1

  5995, Spring, Faculty of Engineering, 4
• From 01 Apr. 2022, To 31 Mar. 2023

  Fundamentals of Aeroapace Propulsion

  5048, Fall, Faculty of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Advanced Course of Electromagnetism

  N233, Spring, Institute for Liberal Arts and Sciences, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Thermodynamics and Statistical Mechanics

  5046, Spring, Faculty of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Seminar on Engineering Science of Ionized Gases

  V401, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Propulsion Engineering, Adv.

  G405, Fall, Graduate School of Engineering, 2
• From 01 Apr. 2022, To 31 Mar. 2023

  Introduction to Engineering Science A

  5110, Fall, Faculty of Engineering, 2
• From Apr. 2011, To Mar. 2012

  Elementary Course of Physics A

  Spring, 全学共通科目
• From Apr. 2011, To Mar. 2012

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2011, To Mar. 2012

  推進基礎論（宇）

  Fall, 工学部
• From Apr. 2011, To Mar. 2012

  推進工学特論

  Spring, 工学研究科
• From Apr. 2011, To Mar. 2012

  マイクロプロセス・材料工学

  Spring, 工学研究科
• From Apr. 2011, To Mar. 2012

  電離気体工学セミナー

  Fall, 工学研究科
• From Apr. 2012, To Mar. 2013

  Elementary Course of Physics A

  Spring, 全学共通科目
• From Apr. 2012, To Mar. 2013

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2012, To Mar. 2013

  Propulsion Engineering, Adv.

  Spring, 工学研究科
• From Apr. 2012, To Mar. 2013

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2012, To Mar. 2013

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2012, To Mar. 2013

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2013, To Mar. 2014

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2013, To Mar. 2014

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2013, To Mar. 2014

  Propulsion Engineering, Adv.

  Spring, 工学研究科
• From Apr. 2013, To Mar. 2014

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2013, To Mar. 2014

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2014, To Mar. 2015

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2014, To Mar. 2015

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2014, To Mar. 2015

  Propulsion Engineering, Adv.

  Spring, 工学研究科
• From Apr. 2014, To Mar. 2015

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2014, To Mar. 2015

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2015, To Mar. 2016

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2015, To Mar. 2016

  Propulsion Engineering, Adv.

  Spring, 工学研究科
• From Apr. 2015, To Mar. 2016

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2015, To Mar. 2016

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2015, To Mar. 2016

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2016, To Mar. 2017

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2016, To Mar. 2017

  Propulsion Engineering, Adv.

  Spring, 工学研究科
• From Apr. 2016, To Mar. 2017

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2016, To Mar. 2017

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2016, To Mar. 2017

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2017, To Mar. 2018

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2017, To Mar. 2018

  Propulsion Engineering, Adv.

  Fall, 工学研究科
• From Apr. 2017, To Mar. 2018

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2017, To Mar. 2018

  Thermodynamics and Statistical Mechanics

  Spring, 工学部
• From Apr. 2017, To Mar. 2018

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2017, To Mar. 2018

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2018, To Mar. 2019

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Propulsion Engineering, Adv.

  Fall, 工学研究科
• From Apr. 2018, To Mar. 2019

  Microprocess and Micromaterial Engineering

  Spring, 工学研究科
• From Apr. 2018, To Mar. 2019

  Thermodynamics and Statistical Mechanics

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Graduation Thesis1

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Graduation Thesis1

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Graduation Thesis2

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Graduation Thesis2

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Engineering Laboratory in Aeronautics and Astronautics 1

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Engineering Laboratory in Aeronautics and Astronautics 2

  Fall, 工学部
• From Apr. 2018, To Mar. 2019

  Engineering Exercise in Aeronautics and Astronautics

  Spring, 工学部
• From Apr. 2018, To Mar. 2019

  Experiments and Exercises in Aeronautics and Astronautics I

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Experiments and Exercises in Aeronautics and Astronautics II

  Year-long, 工学研究科
• From Apr. 2018, To Mar. 2019

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2018, To Mar. 2019

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2019, To Mar. 2020

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2019, To Mar. 2020

  Propulsion Engineering, Adv.

  Fall, 工学研究科
• From Apr. 2019, To Mar. 2020

  Thermodynamics and Statistical Mechanics

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Master's Thesis

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Engineering Laboratory in Aeronautics and Astronautics 1

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Engineering Laboratory in Aeronautics and Astronautics 2

  Fall, 工学部
• From Apr. 2019, To Mar. 2020

  Engineering Exercise in Aeronautics and Astronautics

  Spring, 工学部
• From Apr. 2019, To Mar. 2020

  Experiments and Exercises in Aeronautics and Astronautics I

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Experiments and Exercises in Aeronautics and Astronautics II

  Year-long, 工学研究科
• From Apr. 2019, To Mar. 2020

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2019, To Mar. 2020

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2020, To Mar. 2021

  Advanced Mechanical Engineering

  Fall, 工学研究科
• From Apr. 2020, To Mar. 2021

  Fundamentals of Aeroapace Propulsion

  Fall, 工学部
• From Apr. 2020, To Mar. 2021

  Propulsion Engineering, Adv.

  Fall, 工学研究科
• From Apr. 2020, To Mar. 2021

  Thermodynamics and Statistical Mechanics

  Spring, 工学部
• From Apr. 2020, To Mar. 2021

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2020, To Mar. 2021

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科
• From Apr. 2021, To Mar. 2022

  Fundamentals of Aerospace Propulsion

  Fall, 工学部
• From Apr. 2021, To Mar. 2022

  Propulsion Engineering, Adv.

  Fall, 工学研究科
• From Apr. 2021, To Mar. 2022

  Thermodynamics and Statistical Mechanics

  Spring, 工学部
• From Apr. 2021, To Mar. 2022

  Advanced Course of Electromagnetism

  Spring, 全学共通科目
• From Apr. 2021, To Mar. 2022

  Seminar on Engineering Science of Ionized Gases

  Fall, 工学研究科

Participation in PhD Defense

• A Study on Plasma Process-Induced Defect Creation in Si-Based Devices

  SATO YOSHIHIRO, Graduate School of Engineering, Chief Examiner

  23 Mar. 2023
• A Study on Physical Property Changes in Dielectric and Semiconductor Materials Induced by Ion Irradiation During Plasma Processing

  HAMANO TAKASHI, Graduate School of Engineering, Chief Examiner

  23 Mar. 2023
• Effect of Amorphous Hydrogenated Carbon Multilayer Coating on Tensile and Torsional Strength of Single Crystal Silicon for Mechanical Reliability Enhancement of MEMS Structures

  Xia Yuanlin, Graduate School of Engineering, Sub-chief Examiner

  26 Sep. 2022
• Emission Spectroscopy of Wall Surface Temperature and Impurity Ion Flow in Tokamak Edge Plasmas

  YONEDA NAO, Graduate School of Engineering, Sub-chief Examiner

  23 Mar. 2022

Student achievements: Awards

• 32nd Dry Process Symposium, Young Researcher Award

  松田朝彦, 応用物理学会, 2011
• 33rd Dry Process Symposium, Young Researcher Award

  津田博隆, 応用物理学会, 2012
• 第44回(2018年春季)応用物理学会講演奨励賞

  吉川侑汰, 応用物理学会, 19 Mar. 2018
• 応用物理学会関西支部 第6回関西奨励賞

  久山智弘, 応用物理学会関西支部, 07 Mar. 2018
• 応用物理学会関西支部 平成29年度第3回講演会 ポスター賞（最優秀賞）

  久山智弘, 応用物理学会関西支部, 23 Feb. 2018
• 応用物理学会関西支部 平成29年度第3回講演会 ポスター賞（優秀賞）

  吉川侑汰, 応用物理学会関西支部, 23 Feb. 2018
• 第54回日本航空宇宙学会 関西・中部支部合同秋季大会 関西支部学生賞

  樋口智哉, 日本航空宇宙学会, 11 Nov. 2017
• 39th Dry Process Symposium, Young Researcher Award

  吉川侑汰, 応用物理学会, 13 Nov. 2018
• IEEE EDS Kansai Chapter MFSK Award

  濱野誉, IEEE関西支部, Nov. 2020
• 応用物理学会関西支部 2020年度第1回+第2回合同講演会 ポスター賞（最優秀賞）

  濱野誉, 応用物理学会関西支部, 27 Jan. 2021
• シリコンテクノロジー分科会研究奨励賞

  濱野誉, 応用物理学会, 17 Mar. 2021
• 応用物理学会関西支部 関西奨励賞

  濱野誉, 応用物理学会関西支部, 22 Mar. 2021
• 第19回プラズマエレクトロニクス賞

  佐藤好弘, 応用物理学会, Mar. 2021
• DPS 2019 Young Researcher Award

  濱野誉, 応用物理学会, 2021
• DPS 2019 Young Researcher Award

  久山智弘, 応用物理学会, 2021

Administration

School management (title, position)

• From 28 Oct. 2020, To 30 Sep. 2022

  研究戦略タスクフォース プログラムオフィサー

Faculty management (title, position)

• From 01 Apr. 2018, To 31 Mar. 2019

  航空宇宙工学専攻長
• From 01 Apr. 2019, To 31 Mar. 2021

  工学研究科工学研究倫理委員会　委員

Academic, Social Contribution

Committee Memberships

• From 2025, To 2026

  関西支部 幹事, 日本航空宇宙学会
• From 2007, To Present

  IRPS-Process Integration subcommittee Chair (2007–2008), Management committee (2011-), Technical Program Chair (2022), General Chair (2024), BoD Chair (2025), IEEE
• From 2004, To 2021

  ICICDT-Conference Chair (2009), General Chair (2010), Tutorial Chair (2014, 2015), Secretary (2016-2018), Tutorial Chair (2021), IEEE
• From 2008, To 2010

  PESM-International program committee, IMEC
• From 2004, To 2005

  IEDM-CMOS and Interconnect Reliability subcommittee member, IEEE
• From 1999, To 2003

  Plasma- and Process-Induced Damage (P2ID), Conference Chair (2003), American Vacuum Society
• From Mar. 2021, To Mar. 2023

  -, -
• From 2019, To 2020

  -, -
• From 01 Apr. 2017, To 31 Mar. 2019

  -, -
• From 2014

  -, -
• From 2014

  -, -
• From 2011, To 2013

  -, -
• From 2009, To 2012

  -, -
• From 2010, To 2011

  -, -
• From 2008, To 2010

  -, -
• From 2007, To 2008

  -, -
• From 2008

  International program committee, Plasma Etch and Strip in Microelectronics workshop
• From 2008

  Program committee, Publication Chair (2011), Program committee (2013, 2015), Int. Workshop on Dielectric Thin Films for Future Electron Devices, Science and Technology
• From 2007

  Program committee, Publication Chair (2010), Executive committee (2011–2012, 2015), Dry Process Symposium
• From 2007

  subcommittee, Process Integration subcommittee Chair (2009), Management committee–Asia Liaison (2011–2012), –Secretary (2013), –Workshop chair (2014), –A/V chair (2015), –Presentation chair (2016), –Publicity-Asia (2017), –Registration chair (2018), –Publicity chair (2019), –Publication chair (2020), –Finance chair (2021), IEEE International Reliability Physics Symposium
• From 2004, To 2005

  CMOS and Interconnect Reliability subcommittee member, IEEE International Electron Device Meeting
• From 2000, To 2005

  -, -
• From 2004, To 2004

  Executive committee, Int. Conf. Solid State Device and Materials
• From 2004

  Subcommittee (2004–), Conference Chair (2009), General Chair (2010), Tutorial Chair (2014, 2015), Secretary (2016-2018), IEEE International Conference on IC Design and Technology
• From 1999, To 2003

  Committee (1999–2002), Conference Chair (2003), Symposium on Plasma- and Process-Induced Damage
• From 2000, To 2002

  -, -
• From 1999, To 1999

  Program committee, Silicon Nanoelectronics Workshop